Datasheet AF002C4-39, AF002C1-39 Datasheet (ALPHA)

Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [e-mail] • www.alphaind.com 1

Specifications subject to change without notice. 3/99A

GaAs IC Control FET Series
DC–2.5 GHz

AF002C1-39, AF002C4-39

Part Number

1

Frequency

2

RON(

ΩΩ))

33

Insertion Loss (dB)

4,5

C

OFF

(pF)

6

Isolation (db)

5

P

-1 dB

(W)

(GHz) Typ. Max. Series Shunt Typ. Max. Series Shunt Typ.

AF002C1-39 DC–0.5 GHz 6.4 9.0 0.50 0.10 0.13 0.25 25 12 0.5

DC–1.0 GHz 6.4 9.0 0.60 0.15 0.13 0.25 17 8 1.0
DC–2.5 GHz 6.4 9.0 0.70 0.20 0.13 0.25 13 3 1.0

AF002C4-39 DC–0.5 GHz 0.8 1.1 0.20 0.15 1.10 1.50 11 15 6

DC–1.0 GHz 0.8 1.1 0.25 0.25 1.10 1.50 6 9 10
DC–2.5 GHz 0.8 1.1 0.30 2.00 1.10 1.5 3 4 10

Electrical Specifications at 25°C (0, -5 V)

0.045

(1.14 mm)

0.035

(0.89 mm)

0.004 (0.10 mm)

0.0005 (0.01 mm)

0.027 (0.69 mm) REF.

0.007 (0.18 mm)

0.003 (0.08 mm)

0.120 (3.05 mm)

0.110 (2.79 mm)

0.104 (2.64 mm)

0.083 (2.10 mm)

0.055 (1.40 mm)

0.047 (1.19 mm)

0.024 (0.61 mm)

0.018 (0.45 mm)

0.080 (2.03 mm)

0.070 (1.78 mm)

0.018 (0.45 mm)

0.015 (0.38 mm)

3

1

2

0.040 (1.02 mm)

0.037 (0.94 mm)

Features

■ Low Cost SOT-23 Package

■ Series or Shunt Configuration

■ Low DC Current Drain

■ Ideal Switch Building Blocks

■ Pin Diode Replacements

■ High Power Antenna Switches

SOT-23

Description

This group of GaAs control FETs can be used in both
series and shunt configurations.They incorporate on-chip
circuitry that eliminates the need for extra bias
components and minimizes power drain to typically 25 µW.
These features make the device ideal replacements for
PIN diodes, where low DC drain is critical.

Isolation performance degrades at higher frequencies due
to package parasitics.They can be tuned out in narrow
band applications as shown in the circuit examples on the
following pages.

Parameter Condition Frequency Min. Typ. Max. Unit

Switching Characteristics Rise, Fall (10/90% or 90/10% RF) 6 ns

On, Off (50% CTL to 90/10% RF) 12 ns

Control Voltages V

Low

= 0 to -0.2 V @ 20 µA Max.

V

High

= -5 V @ 50 µA to -9 V @ 200 µA Max.

Operating Characteristics at 25°C (0, -5 V)

1.All measurements made in a 50 Ω system, unless otherwise specified.

2. DC = 300 kHz.

3.R

ON

- resistance in Ω in low impedance state when “0”V is applied to Gate (G).

4. Insertion loss changes by 0.003 dB/°C.

5. Insertion loss and isolation typical values.

6.C

OFF

- capacitance (pF) in high impedance state when -5 V is applied to Gate (G).

GaAs IC Control FET Series DC–2.5 GHz AF002C1-39, AF002C4-39

2 Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [e-mail] • www.alphaind.com

Specifications subject to change without notice. 3/99A

Insertion Loss vs. Frequency

Series Configuration

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

C4

C1

0 0.5 1 1.5 2 2.5 3

Frequency (GHz)

Insertion Loss (dB)

Isolation vs. Frequency

Series Configuration

0 0.5 1 1.5 2 2.5 3

Frequency (GHz)

Isolation (dB)

0

5

10

15

20

25

30

35

40

45

50

C4

C1

Insertion Loss vs. Frequency

Shunt Configuration

0 0.5 1 1.5 2 2.5 3

Frequency (GHz)

Insertion Loss (dB)

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

C1

C4

Isolation vs. Frequency

Shunt Configuration

0 0.5 1 1.5 2 2.5 3

Frequency (GHz)

Isolation (dB)

0

5

10

15

20

25

30

C1

C4

Typical Performance Data (0, -5 V)

Characteristic Value

RF Input Power 2 W > 500 MHz 0/-8 V

0.5 W @ 50 MHz 0/-8 V
Control Voltage +0.2 V, -10 V
Operating Temperature -40°C to +85°C
Storage Temperature -65°C to +150°C

Θ

JC

25°C/W

Absolute Maximum Ratings

Note: Exceeding these parameters may cause irreversible damage.

Characteristic Value

RF Input Power 12 W > 450 MHz, 0/-12 V
Control Voltage +0.2, -12 V
Operating Temperature -40°C to +85°C
Storage Temperature -65°C to +150°C

Θ

JC

25°C/W

AF002C1-39 AF002C4-39

GaAs IC Control FET Series DC–2.5 GHz AF002C1-39, AF002C4-39

Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [e-mail] • www.alphaind.com 3

Specifications subject to change without notice. 3/99A

System Block Diagram

Mobile

Antenna

Phone

Antenna

Diplexer

LNA PA

T/R Switch

Disconnect

Changeover

Switch

From Transmitter

To Receiver

T/R Switch

T/R and Antenna Changeover Switch for Mobile Cellular Systems

D S

G

LT (nH)

10 kΩ

C (pF)

Antenna

G

D

S

T

X

V

CTL

R

X

λ/4

GaAs FET

AF002C

Series

GaAs FET

AF002C

Series

V

CTL

(V) TXto Antenna RXto Antenna

0 Low Loss High Isolation

-5 High Isolation Low Loss

Truth Table for T/R Switch

See next page for positive voltage operation.

V

CTL

(V) Antenna

-5 Connected
0 Isolated

Truth Table for Changeover Switch

See next page for positive voltage operation.

Part Number LT(nH) CT(pF) Freq. (GHz)

AF002C1-39 165 18.8 0.45
AF002C4-39 85 18.8 0.45
AF002C1-39 44 4.7 0.90
AF002C4-39 22 4.7 0.90

Component Values for T/R Switch Circuit

Antenna

C

T

D S

G

To T/R Switch

V

CTL

Changeover Switch SchematicT/R Switch Schematic

GaAs IC Control FET Series DC–2.5 GHz AF002C1-39, AF002C4-39

4 Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [e-mail] • www.alphaind.com

Specifications subject to change without notice. 3/99A

S D G RF Path

Shunt

-5 Insertion Loss

GND RF

0 Isolation

Series

0 Insertion Loss

RF RF

-5 Isolation

Truth Table

Negative Voltage Operation

Positive Voltage Operation

S D G RF Path

Shunt

0 Insertion Loss

GND RF

V

High

Isolation

Series

0 Isolation

RF RF

V

High

Insertion Loss

CBL - Chose value for lowest impedance at desired operating frequency.

G (0, V

High

)

D S2 1

3

Shunt Configuration

C

T

V

S

10 kΩ

G (0, V

High

)

D S2 1

3

Series Configuration

C

BL

C

BL

V

S

10 kΩ

RF

RFRF

RF

L

T

Positive Voltage Operation

DRAIN (D) SOURCE (S)

GATE (G)

12

3

Pin Out

V

High

= +5 to +9 V (VS= V

High

± 0.2 V).