Datasheet ADXRS450 Datasheet (ANALOG DEVICES)

Page 1
High Performance,
V
Data Sheet

FEATURES

Complete rate gyroscope on a single chip ±300°/sec angular rate sensing High vibration rejection over a wide frequency range Excellent 25°/hour null offset stability Internally temperature compensated 2000 g powered shock survivability SPI digital output with 16-bit data-word Low noise and low power
3.3 V and 5 V operation
−40°C to +105°C operation Ultrasmall, light, and RoHS compliant Two package options
Low cost SOIC_CAV package for yaw rate (Z-axis) response Innovative ceramic vertical mount package, which can be
oriented for pitch, roll, or yaw response

APPLICATIONS

Rotation sensing medical applications Rotation sensing industrial and instrumentation High performance platform stabilization
Digital Output Gyroscope
ADXRS450

GENERAL DESCRIPTION

The ADXRS450 is an angular rate sensor (gyroscope) intended for industrial, medical, instrumentation, stabilization, and other high performance applications. An advanced, differential, quad sensor design rejects the influence of linear acceleration, enabling the ADXRS450 to operate in exceedingly harsh environments where shock and vibration are present.
The ADXRS450 uses an internal, continuous self-test archi­tecture. The integrity of the electromechanical system is checked by applying a high frequency electrostatic force to the sense structure to generate a rate signal that can be differentiated from the baseband rate data and internally analyzed.
The ADXRS450 is capable of sensing angular rate of up to ±300°/sec. Angular rate data is presented as a 16-bit word, as part of a 32-bit SPI message.
The ADXRS450 is available in a cavity plastic 16-lead SOIC (SOIC_CAV) and an SMT-compatible vertical mount package (LCC_V), and is capable of operating across both a wide voltage range (3.3 V to 5 V) and temperature range (−40°C to +105°C).
Z-AXIS ANGUL AR
RATE SENSOR
HV DRIVE
PHASE-
LOCKED
LOOP
BAND-PASS
FILTER
Q DAQ
P DAQ
X
CP5
HIGH VOLT AGE
GENERATION
CLOCK
DIVIDER
AMPLITUDE
DETECT
ADC 12

FUNCTIONAL BLOCK DIAGRAM

ADXRS450
ALU
DECIMATION
FILTER
TEMPERATURE
Figure 1.
CALIBRATIO N
FAULT
DETECTIO N
EEPROM
DEMOD
Q FILTER
ST
CONTROL
REGISTERS/MEMORY
LDO
REGULATOR
SPI
INTERFACE
P
DD
DV
DD
AV
DD
MOSI
MISO
SCLK
CS
DV
SS
P
SS
AV
SS
08952-001
Rev. B
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 www.analog.com Fax: 781.461.3113 ©2011 Analog Devices, Inc. All rights reserved.
Page 2
ADXRS450 Data Sheet

TABLE OF CONTENTS

Features.............................................................................................. 1
Applications....................................................................................... 1
General Description ......................................................................... 1
Functional Block Diagram .............................................................. 1
Revision History ............................................................................... 2
Specifications..................................................................................... 3
Absolute Maximum Ratings............................................................ 4
Thermal Resistance ...................................................................... 4
Rate Sensitive Axis ....................................................................... 4
ESD Caution.................................................................................. 4
Pin Configuration and Function Descriptions............................. 5
Typical Performance Characteristics ............................................. 7
Theory of Operation ........................................................................ 9
Continuous Self-Test.................................................................... 9
Applications Information .............................................................. 10
Calibrated Performance............................................................. 10
Mechanical Considerations for Mounting.............................. 10
Applications Circuits ................................................................. 10
ADXRS450 Signal Chain Timing............................................. 10
SPI Communication Protocol....................................................... 12
Command/Response ................................................................. 12
SPI Communications Characteristics...................................... 13
SPI Applications ......................................................................... 14
SPI Rate Data Format..................................................................... 19
Memory Map and Registers.......................................................... 20
Memory Map .............................................................................. 20
Memory Register Definitions ................................................... 21
Package Orientation and Layout Information............................ 23
Package Marking Codes ............................................................ 25
Outline Dimensions....................................................................... 26
Ordering Guide .......................................................................... 27

REVISION HISTORY

12/11—Rev. A to Rev. B
Changes to the Rate Sensitive Axis Section .................................. 4
Changes to Figure 5.......................................................................... 6
Changes to Figure 28...................................................................... 23
Deleted Figure 31, Renumbered Sequentially ............................ 24
Changes to Back Side Terminals Notation, Figure 34 ............... 26
6/11—Rev. 0 to Rev. A
Changes to Ordering Guide.......................................................... 28
1/11—Revision 0: Initial Version
Rev. B | Page 2 of 28
Page 3
Data Sheet ADXRS450

SPECIFICATIONS

Specification conditions @ TA = T
Table 1.
Parameter Test Conditions/Comments Symbol Min Typ Max Unit
MEASUREMENT RANGE Full-scale range FSR ±300 ±400 °/sec SENSITIVITY See Figure 2
Nominal Sensitivity 80 LSB/°/sec Sensitivity Tolerance ±3 % Nonlinearity1 Best fit straight line 0.05 0.25 % FSR rms Cross Axis Sensitivity2 ±3 %
NULL
Null Accuracy ±3 °/sec
NOISE PERFORMANCE
Rate Noise Density TA = 25°C 0.015 °/sec/√Hz
LOW-PASS FILTER
Cut-Off (−3 dB) Frequency f0/200, see Figure 6 fLP 80 Hz Group Delay3 f = 0 Hz tLP 3.25 4 4.75 ms
SHOCK AND VIBRATION IMMUNITY
Sensitivity to Linear Acceleration DC to 5 kHz 0.03 °/sec/g Vibration Rectification 0.003 °/sec/g2
SELF TEST See Continuous Self-Test section
Magnitude 2559 LSB Fault Register Threshold Compared to LOCST data 2239 2879 LSB Sensor Data Status Threshold Compared to LOCST data 1279 3839 LSB Frequency f0/32 fST 500 Hz ST Low-Pass Filter
−3 dB Frequency f0/800, see Figure 7 2 Hz Group Delay3 52 64 76 ms
SPI COMMUNICATIONS
Clock Frequency 8.08 MHz Voltage Input High Voltage Input Low Output Voltage Low MISO, current = 3 mA 0.5 V Output Voltage High MISO, current = −2 mA PDD − 0.5 V
Pull-Up Current
MEMORY REGISTERS See the Memory Register
Temperature Sensor
Value at 45°C 0 LSB Scale Factor 5 LSB/°C
Quad, ST, Rate, DNC Registers
Scale Factor 80 LSB/°/sec
POWER SUPPLY
Supply Voltage PDD 3.15 5.25 V Quiescent Supply Current IDD 6.0 10.0 mA Turn-On Time Power on to 0.5°/sec of final 100 ms
TEMPERATURE RANGE Independent of package type T
1
Maximum limit is guaranteed through Analog Devices, Inc., characterization.
2
Cross axis sensitivity specification does not include effects due to device mounting on a printed circuit board (PCB).
3
Minimum and maximum limits are guaranteed by design.
MIN
to T
, PDD = 5 V, angular rate = 0°/sec, bandwidth = 80 Hz ±1 g, continuous self-test on.
MAX
CS
MOSI, MOSI,
CS CS
, SCLK
CS
, SCLK
, PDD = 3.3 V, CS = 0.75 × PDD , PDD = 5 V, CS = 0.75 × PDD
Definitions section
0.85 × P
−0.3 P
PDD + 0.3 V
DD
× 0.15 V
DD
50 200 µA 70 300 µA
, T
−40 +105 °C
MIN
MAX
Rev. B | Page 3 of 28
Page 4
ADXRS450 Data Sheet

ABSOLUTE MAXIMUM RATINGS

Table 2.
Parameter Rating
Acceleration (Any Axis, 0.5 ms)
Unpowered 2000 g
Powered 2000 g Supply Voltage (PDD) −0.3 V to +6.0 V Output Short-Circuit Duration (Any Pin to
Indefinite
Ground) Temperature Range
Operating
LCC_V Package −40°C to +125°C SOIC_CAV Package −40°C to +125°C
Storage
LCC_V Package −65°C to +150°C SOIC_CAV Package −40°C to +150°C
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

THERMAL RESISTANCE

θJA is specified for the worst-case conditions, that is, for a device soldered in a printed circuit board (PCB) for surface-mount packages.
Table 3. Thermal Resistance
Package Type θJA θ
16-Lead SOIC_CAV 191.5 25 °C/W 14-Lead Ceramic LCC_V 185.5 23 °C/W
Unit
JC

RATE SENSITIVE AXIS

The ADXRS450 is available in two package options. The SOIC_CAV package configuration is for applications that require a z-axis (yaw) rate sensing device.
The vertical mount package (LCC_V) option is for applications that require rate sensing in the axes parallel to the plane of the PCB (pitch and roll). See Figure 2 for details.
RATE
AXIS
+
16
RATE
SOIC PACKAGE
9
Figure 2. Rate Signal Increases with Clockwise Rotation
AXIS
Z-AXIS
+
LCC_V PACKAGE
08952-002
The LCC_V package has terminals on two faces; however, the terminals on the back side are for internal evaluation only and should not be used in the end application. The terminals on the bottom of the package incorporate metallization bumps that ensure a minimum solder thickness for improved solder joint reliability. These bumps are not present on the back side terminals and, therefore, poor solder joint reliability can be encountered if used in the end application. See Figure 34 in the Outline Dimensions section for a schematic of the LCC_V package.

ESD CAUTION

Rev. B | Page 4 of 28
Page 5
Data Sheet ADXRS450

PIN CONFIGURATION AND FUNCTION DESCRIPTIONS

DV
RSVD
RSVD
CS
MISO
P
P
VX
DD
DD
SS
1
2
3
ADXRS450
4
TOP VIEW
(Not to Scale)
5
6
7
8
16
SCLK
15
MOSI
14
AV
DD
13
DV
SS
12
RSVD
11
AV
SS
10
RSVD
9
CP5
08952-003
Figure 3. SOIC_CAV Pin Configuration
Table 4. 14-Lead SOIC_CAV Pin Function Descriptions
Pin No. Mnemonic Description
1 DVDD Digital Regulated Voltage. See Figure 21 for the applications circuit diagram. 2 RSVD Reserved. This pin must be connected to DVSS. 3 RSVD Reserved. This pin must be connected to DVSS. 4
CS
Chip Select. 5 MISO Master In/Slave Out. 6 PDD Supply Voltage. 7 PSS Switching Regulator Ground. 8 VX High Voltage Switching Node. See Figure 21 for the applications circuit diagram. 9 CP5 High Voltage Supply. See Figure 21 for the applications circuit diagram. 10 RSVD Reserved. This pin must be connected to DVSS. 11 AVSS Analog Ground. 12 RSVD Reserved. This pin must be connected to DVSS. 13 DVSS Digital Signal Ground. 14 AVDD Analog Regulated Voltage. See Figure 21 for the applications circuit diagram. 15 MOSI Master Out/Slave In. 16 SCLK SPI Clock.
Rev. B | Page 5 of 28
Page 6
ADXRS450 Data Sheet
PDDPSSMOSI
14 13 12 11 10 9 8
1234567
SS
AV
DVSSCS
DD
DD
AV
MISO
DV
TOP VIEW
(Not to Scale)
VX
RSVD
CP5
SCLK
RSVD
08952-005
Figure 4. LCC_V Pin Configuration
CP5
RSVD
SCLK
DVDDMISO
VX
CS
DV
RSVD
NOTES
1. THE LCC_V PACKAGE HAS TW O TERMI NALS ON T WO FACES; HOWEVER, THE TERMINALS O N THE BACK SIDE ARE FO R INTERNAL E VALUATIO N ONLY AND SHO ULD NOT BE USED IN THE END APP LICATION. THE TERMINALS ON THE BOT TOM OF THE PACKAGE INCORPORAT E METALL IZATI ON BUMPS THAT ENSURE A MINIMUM SOLDER THI CKNESS FOR I MPROVED SOLDER JOI NT RELI ABILIT Y. THESE BUMPS ARE NOT PRESENT ON T HE BACK SIDE T ERMINALS AND, THEREFO RE, POOR SOLDER JOINT RELI ABILIT Y CAN BE ENCOUNTERED IF USED IN T HE END APPLICATION. S EE THE OUT LINE DIM ENSIONS S ECTION F OR A SCHEMATIC O F THE LCC_V PACKAGE.
(Not to Scale)
Figure 5. LCC_V Pin Configuration, Horizontal Layout
SS
AVDDAV
1234567
141312111098
SS
SS
DD
P
P
MOSI
08952-037
Table 5. 14-Lead LCC_V Pin Function Descriptions
Pin No. Mnemonic Description
1 AVSS Analog Ground. 2 AVDD Analog Regulated Voltage. See Figure 22 for the applications circuit diagram. 3 MISO Master In/Slave Out. 4 DVDD Digital Regulated Voltage. See Figure 22 for the applications circuit diagram. 5 SCLK SPI Clock. 6 CP5 High Voltage Supply. See Figure 22 for the applications circuit diagram. 7 RSVD Reserved. This pin must be connected to DVSS. 8 RSVD Reserved. This pin must be connected to DVSS. 9 VX High Voltage Switching Node. See Figure 22 for the applications circuit diagram. 10
CS
Chip Select.
11 DVSS Digital Signal Ground. 12 MOSI Master Out/Slave In. 13 PSS Switching Regulator Ground. 14 PDD Supply Voltage.
Rev. B | Page 6 of 28
Page 7
Data Sheet ADXRS450

TYPICAL PERFORMANCE CHARACTERISTICS

0.20
0.18
0.16
0.14
0.12
0.10
0.08
% OF POPULATION
0.06
0.04
0.02
0
–1.6
–2.0
–1.2
–0.8
NULL ERROR (° /sec)
0
–0.4
0.8
0.4
1.6
1.2
2.0
08952-006
Figure 6. SOIC_CAV Null Error @ 25°C
0.30
0.40
0.35
0.30
0.25
0.20
0.15
% OF POPULATION
0.10
0.05
0
–2.0 –1.6 –1.2 –0.8 –0.4 0 2.01.61.20.80.4
NULL ERROR (° /sec)
Figure 9. LCC_V Null Error @ 25°C
0.30
08952-009
0.25
0.20
0.15
0.10
% OF POPULATION
0.05
0
–2.5
–2.0
–1.5
–1.0
–3.0
–0.5
NULL DRIFT ERROR (°/ sec)
Figure 7. SOIC_CAV Null Drift over Temperature
0.25
0.20
0.15
0.10
% OF POPULATION
0.05
0.25
0.20
0.15
0.10
% OF POPULATION
0.05
0
0.5
1.0
1.5
2.0
2.5
3.0
08952-007
0
–2.5
–2.0
–3.0
–1.5
NULL DRIFT ERROR (° /sec)
0
–0.5
–1.0
1.5
1.0
–0.5
3.0
2.5
2.0
08952-010
Figure 10. LCC_V Null Drift over Temperature
0.25
0.20
0.15
0.10
% OF POPULATION
0.05
0
–3.0
–2.5
–2.0
–1.5
CHANGE IN SENSITIVITY (%)
0
–1.0
–0.5
Figure 8. SOIC_CAV Sensitivity Error @ 25°C
0.5
1.0
1.5
2.0
2.5
3.0
08952-008
0
–3.0
–2.5
–2.0
–1.5
CHANGE IN SENSITIVITY (%)
0
0.5
1.0
1.5
2.0
2.5
–1.0
–0.5
3.0
08952-029
Figure 11. LCC_V Sensitivity Error @ 25°C
Rev. B | Page 7 of 28
Page 8
ADXRS450 Data Sheet
R
0.30
0.25
0.20
0.15
0.10
% OF POPULATION
0.05
0
–3
–2
–1
DRIFT (%)
1
0
Figure 12. SOIC_CAV Sensitivity Drift over Temperature
1
0.1
3
2
08952-030
0.45
0.40
0.35
0.30
0.25
0.20
0.15
% OF POPULATION
0.10
0.05
0
–3
–2
CHANGE IN SENSITIVITY (%)
0
–1
Figure 15. LCC_V Sensitivity Drift over Temperature
40
30
20
10
DUT1 DUT2 DUT AVERAGE (°/s) REF
3
2
1
08952-033
60
50
40
30
/Hz)
2
(g
0.01
0.001 065k4k3k2k1k
VIBRATION F REQUENCY (Hz)
k
Figure 13. Typical Response to Random Vibration, 15 g rms, 50 Hz to 5 kHz
3
N = 16
2
1
0
–1
NULL OUTPUT ERRO
–2
–3
–50 1109070503010–10–30
DUT TEMPERATURE (°C)
Figure 14. Null Output over Temperature, Device Soldered on PCB
0
–10
GYRO OUTPUT (°/s)
–20
–30
–40
0.1 0.15 0.20 0.25 0.30 0.35 0.40
08952-031
TIME (sec)
20
10
0
–10
–20
INPUT ACCELERAT ION (g)
08952-034
Figure 16. Typical Shock Response
3
N = 16
2
1
0
–1
–2
SENSITIVITY OVER TEMPERATURE ERROR
–3
08952-032
–50 1109070503010–10–30
DUT TEMPERATURE (°C)
08952-035
Figure 17. Sensitivity over Temperature, Device Soldered to PCB
Rev. B | Page 8 of 28
Page 9
Data Sheet ADXRS450
S

THEORY OF OPERATION

The ADXRS450 operates on the principle of a resonator gyro­scope. A simplified version of one of four polysilicon sensing structures is shown in Figure 18. Each sensing structure contains a dither frame that is electrostatically driven to resonance. This produces the necessary velocity element to produce a Coriolis force when experiencing angular rate. In the SOIC_CAV package, the ADXRS450 is designed to sense a z-axis (yaw) angular rate; whereas the vertical mount package (LCC_V) orients the device such that it can sense pitch or roll angular rate on the same PCB.
When the sensing structure is exposed to angular rate, the resulting Coriolis force couples into an outer sense frame, which contains movable fingers that are placed between fixed pickoff fingers. This forms a capacitive pickoff structure that senses Coriolis motion. The resulting signal is fed to a series of gain and demodulation stages that produce the electrical rate signal output. The quad sensor design rejects linear and angular acceleration, including external g-forces and vibration. This is achieved by mechanically coupling the four sensing structures such that external g-forces appear as common-mode signals that can be removed by the fully differential architecture implemented in the ADXRS450.

CONTINUOUS SELF-TEST

The ADXRS450 gyroscope uses a complete electromechanical self-test. An electrostatic force is applied to the gyroscope frame, resulting in a deflection of the capacitive sense fingers. This deflection is exactly equivalent to deflection that occurs as a result of external rate input. The output from the beam structure is processed by the same signal chain as a true rate output signal, providing complete coverage of the electrical and mechanical components.
The electromechanical self-test is performed continuously during operation at a rate higher than the output bandwidth of the device. The self-test routine generates equivalent positive and negative rate deflections. This information can then be filtered with no overall effect on the demodulated rate output.
RATE SIGNAL WITH
CONTINUOUS S ELF TES T SIGNAL .
X
Y
Z
Figure 18. Simplified Gyroscope Sensing Structure
The resonator requires 22.5 V (typical) for operation. Because only 5 V is typically available in most applications, a switching regulator is included on chip.
ELF TEST AMPLIT UDE. INTERNAL LY
COMPARED TO THE SPECIFICATION
TABLE LI MITS.
Figure 19. Continuous Self-Test Demodulation
LOW FRE QUENCY RATE I NFORMATI ON.
The difference amplitude between the positive and negative self-test deflections is filtered to 2 Hz, and it is continuously monitored and compared to hardcoded self-test limits. If the measured amplitude exceeds these limits (listed in Tab l e 1 ), one of two error conditions asserts depending on the magnitude of self-test error. For less severe self-test error magnitudes, the CST bit of the fault register is asserted; however, the status bits (ST[1:0]) in the sensor data response remain set to 0b01 for valid sensor data. For more severe self-test errors, the CST bit of the fault reg­ister is asserted, and the status bits (ST[1:0]) in the sensor data response are set to 0b00 for invalid sensor data. Ta b le 1 lists the
08952-011
thresholds for both of these failure conditions. If desired, the user can access the self-test information by issuing a read command to the self-test memory register (Address 0x04). For more infor­mation about error reporting, see the SPI Communication Protocol section.
08952-012
Rev. B | Page 9 of 28
Page 10
ADXRS450 Data Sheet
V
G

APPLICATIONS INFORMATION

CALIBRATED PERFORMANCE

Each ADXRS450 gyroscope uses internal EEPROM memory to store its temperature calibration information. The calibration information is encoded into the device during factory test. The calibration data is used to perform offset, gain, and self-test cor­rections over temperature. By storing this information internally, it removes the burden from the customer of performing system level temperature calibration.

MECHANICAL CONSIDERATIONS FOR MOUNTING

Mount the ADXRS450 in a location close to a hard mounting point of the PCB to the case. Mounting the ADXRS450 at an unsupported PCB location (that is, at the end of a lever, or in the middle of a trampoline), as shown in Figure 20, can result in apparent measurement errors because the gyroscope is subject to the resonant vibration of the PCB. Locating the gyroscope near a hard mounting point helps to ensure that any PCB reson­ances at the gyroscope are above the frequency at which harmful aliasing with the internal electronics can occur. To ensure that aliased signals do not couple into the baseband measurement range, design the module wherein the first system level resonance occurs at a frequency higher than 800 Hz.
GYROSCOPE
PCB
MOUNTING POINTS
Figure 20. Incorrectly Placed Gyroscope
8952-013

APPLICATIONS CIRCUITS

Figure 21 and Figure 22 show the recommended application circuits for the ADXRS450 gyroscope. These application circuits provide a connection reference for the available package types. Note that DV ground through 1 F capacitors; do not connect these supplies together. Additionally, an external diode and inductor must be connected for proper operation of the internal shunt regulator. These components (listed in Tabl e 6 ) allow for the internal reso­nator drive voltage to reach its required level, as listed in the Specifications section.
Table 6. Internal Shunt Regulator Components
Component Qty. Description
Inductor 1 470 H Diode 1 >24 V breakdown voltage Capacitor 3 1 F Capacitor 1 100 nF
, AVDD, and PDD are individually connected to
DD
1µF
GND
3.3V TO 5V
1µF
470µH
GND
Figure 21. Recommended Applications Circuit, SOIC_CAV Package
1µF
1µF
100nF
ND
Figure 22. Recommended Applications Circuit, Ceramic LCC_V Package

ADXRS450 SIGNAL CHAIN TIMING

The ADXRS450 primary signal chain is shown in Figure 23; it is the series of necessary functional circuit blocks through which the rate data is generated and processed. This sequence of electro­mechanical elements determines how quickly the device is capable of translating an external rate input stimulus into an SPI word to be sent to the master device. The group delay, which is a func­tion of the filter characteristic, is the time required for the output of the low-pass filter to be within 10% of the external rate input, and is seen to be ~4 ms. Additional delay can be observed due to the timing of SPI transactions and the population of the rate data into the internal device registers. Figure 23 anatomizes this delay, wherein the delay through each element of the signal chain is presented.
116
DV
DD
RSVD
RSVD
CS
MISO
P
DD
P
SS
VX
>24V BREAKDOWN
TOP VIEW
114
AV
SS
AV
DD
MISO
DV
DD
SCLK
CP5
RSVD
DIODE
>24V BREAKDOWN
DIODE
MOSI
DV
RSVD
P
P
CS
VX
SCLK
MOSI
AV
DV
RSVD
AV
RSVD
CP5
DD
SS
SS
DD
SS
SS
GND
1µF
3.3
GND
1µF
100nF
TO 5V
470µH
GND
08952-014
08952-015
Rev. B | Page 10 of 28
Page 11
Data Sheet ADXRS450
Z
The transfer function for the rate data LPF is given as
2
64
1
⎢ ⎣
Z
1
1
Z
where:
T =
f
0
11
=
(typ)kHz16
PRIMARY SIGNAL CHAIN
The transfer function for the continuous self-test LPF is given as
1
1
6364
where:
16
T =
=
f
0
(typ)ms1
4ms
GROUP DELAY
SPI
<2.2ms DELAY
08952-016
Z-AXIS ANGULAR
RATE SENSOR
<5µs
DELAY
BAND-PASS
FILTER
<5µs
DELAY
ADC 12
<5µs
DELAY
DEMOD
ARITHMETI C LOGIC UNIT
RATE DATA
LPF
CONTINUOUS
SELF-TEST
LPF
<64ms
GROUP DELAY
TRANSACTION
REGISTERS/MEMORY
Figure 23. Primary Signal Chain and Associated Delays
Rev. B | Page 11 of 28
Page 12
ADXRS450 Data Sheet
6

SPI COMMUNICATION PROTOCOL

COMMAND/RESPONSE

Input/output is handled through a 32-bit, command/response SPI interface. The command set and the format for the interface is defined as follows:
Clock phase = clock polarity = 0
Additionally, the device response to the initial command is 0x00000001. This prevents the transmission of random data to the master device upon the initial command/response exchange.
CS
Table 7. SPI Signals
Signal Symbol Description
Serial Clock SCLK Chip Select Master Out
CS MOSI
Slave In Master In
MISO
Slave Out
Exactly 32 clock cycles during CS Active low Data sent to the gyroscope device
from the main controller Data sent to the main controller
from the gyroscope
active
SCLK
MOSI
MISO
32 CLOCK
CYCLES
COMMAND N
RESPONSE N – 1
Figure 24. SPI Protocol
32 CLOCK
CYCLES
COMMAND N + 1
RESPONSE N
08952-017
Table 8. SPI Commands
Bit
Command
Sensor Data
Read 1 0 0 SM2 SM1 SM0 A8 A7 A6 A5 A4 A3 A2 A1 A0 P
Write 0 1 0 SM2 SM1 SM0 A8 A7 A6 A5 A4 A3 A2 A1 A0 D15 D14 D13 D12 D11 D10 D9 D8 D7 D6 D5 D4 D3 D2 D1 D0 P
31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7
SQ1 SQ0 1 SQ2 CHK P
5 4 3 2 1 0
Table 9. SPI Responses
Bit
Command
Sensor Data
Read 0 1 0 P0 1 1 1 0 SM2 SM1 SM0 D15 D14 D13 D12 D11 D10 D9 D8 D7 D6 D5 D4 D3 D2 D1 D0 P1
31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0
SQ2 SQ1 SQ0 P0 ST1 ST0 D15 D14 D13 D12 D11 D10 D9 D8 D7 D6 D5 D4 D3 D2 D1 D0 PLL Q NVM POR PWR CST CHK P1
Write 0 0 1 P0 1 1 1 0 SM2 SM1 SM0 D15 D14 D13 D12 D11 D10 D9 D8 D7 D6 D5 D4 D3 D2 D1 D0 P1
R/W Error
0 0 0 P0 1 1 1 0 SM2 SM1 SM0 0 0 SPI RE DU PLL Q NVM POR PWR CST CHK P1
Rev. B | Page 12 of 28
Page 13
Data Sheet ADXRS450

SPI COMMUNICATIONS CHARACTERISTICS

Note the following conditions for Table 10 :
All minimum and maximum timing values are guaranteed
through characterization.
All timing is shown with respect to 10% V
the actual delivered voltage waveform.
All minimum and maximum timing values are valid for
3.0 V ≤ V
≤ 5.5 V.
DD
Capacitive load for all signals is assumed to be ≤80 pF.
Ambient temperature is −40°C ≤ T
≤ +105°C.
A
MISO pull-up of 47 kΩ or 110 µA.
Sequential transfer increases to 17 ms following any write
operation limited by the EEPROM.
and 90% of
DD
Table 10. SPI Command/Response Timing Characteristics
Symbol Description Min Max Unit
f
OP
t
SCLKH
t
SCLKL
t
SCLK
t
F
t
R
t
SU
t
HIGH
t
A
t
V
t
LAG
t
DIS
t
LEAD
t
LAG
t
D
f
0
SPI operating
8.08 MHz
frequency Clock (SCLK)
1/2t
− 13 ns
SCLK
high time Clock (SCLK) low
1/2t
− 13 ns
SCLK
time SCLK period 123.7 ns Clock (SCLK) fall
5.5 13 ns
time Clock (SCLK) rise
5.5 13 ns
time Data input
37 ns (MOSI) setup time
Data input
49 ns (MOSI) hold time
Data output
20 ns (MISO) access time
Data output
20 ns (MISO) valid after SCLK
Data output
0 ns (MISO) lag time
Data output
40 ns (MISO) disable time
1/2t
Enable (CS) lead time
Enable (CS) lag
ns
SCLK
ns
1/2t
SCLK
time Sequential
0.1 ms
transfer delay Gyroscope
13 19 kHz resonant frequency
Rev. B | Page 13 of 28
Page 14
ADXRS450 Data Sheet
K

SPI APPLICATIONS

Device Data Latching

To allow for rapid acquisition of data from the ADXRS450, device data latching has been implemented in the design, as shown in Figure 26. Upon the assertion of chip select ( present in the device is latched into memory. When the full MOSI command has been received, and
CS
t
LEAD
SCK
CS
), the data
CS
deasserted, the
t
SCLK
t
SCLKHtSCLKL
t
F
appropriate data is shifted into the SPI port registers in prepara­tion for the next sequential command/response exchange. This allows for an exceedingly fast sequential transfer delay of 0.1 ms
Tabl e 10
(see ). As a design precaution, note that the transmitted data is only as recent as the sequential transmission delay imple­mented by the system. Conditions that result in a sequential transfer delay of several seconds cause the next sequential device response to contain data that is several seconds old.
t
t
R
LAG
t
D
SCL
MOSI
CS
t
A
MISO
MOSI
DEVICE DATA IS LAT CHED AFTER THE ASSERTION O F CS. LAT CHED DATA IS TRANSMITT ED DURING THE NEXT SEQUENTIAL COMMAND/RESP ONSE EXCHANGE.
32 CLOCK
CYCLES
COMMAND N
0x…
MSB
t
HIGH
t
SU
MSB
t
LAG
t
V
Figure 25. SPI Timings
32 CLOCK
COMMAND N + 1
CYCLES
0x…
t
DIS
LSB
LSB
32 CLOCK
CYCLES
COMMAND N + 2
0x…
08952-018
MISO
RESPONSE N – 1
0x00000001
RESPONSE N
0x…
RESPONSE N + 1
0x…
8952-019
Figure 26. Device Data Latching
Rev. B | Page 14 of 28
Page 15
Data Sheet ADXRS450

Command/Response—Bit Definitions

Table 11. Quick Guide—Bit Definitions for SPI Interface
Bit Description
SQ2 to SQ0 Sequence bits (from master) SM2 to SM0 Sensor module bits (from master) A8 to A0 Register address D15 to D0 Data SPI SPI command/response ST1 to ST0 Status bits P Command odd parity P0 Response, odd parity, Bits[31:16] P1 Response, odd parity, Bits[31:0] RE Request error DU Data unavailable
SQ2 to SQ0
This field provides the system with a means of synchronizing the data samples that are received from multiple sensors. To facilitate correct synchronization, the ADXRS450 gyroscope includes the SQ[2:0] field in the response sequence as it was received in the request.
SM2 to SM0
Sensor module bits from master device. These bits have not been implemented in the ADXRS450, and are hardcoded to be 000 for all occurrences.
A8 to A0
The A8 to A0 bits represent the memory address from which device data is being read, or to which information is to be written. These bits should only be supplied by the master when the memory registers are being accessed, and are ignored for all sensor data requests. Refer to the Memory Register Definitions section for a complete description of the available memory registers.
D15 to D0
16-bit device data that can contain any of the following:
Master—data to be written to a memory register as
specified in the A8 to A0 section.
Slave—sensor rate output data.
Slave—device data read from the memory register
specified in the A8 to A0 section, as well as the data from the next sequential register.
Slave—for a write command, the 16-bit data that is written
to the specified memory register reflects back to the master device for correlation.
SPI
The SPI bit sets when any of the following occurs: either too many/not enough bits are transmitted, or the message from the control module contains a parity error. Additionally, any error during a sensor data request results in the device issuing a read/write error.
ST1 to ST0
The status bits (ST1 and ST0) are used to signal to the master device the type of data contained in the response message. The status bits are decoded as listed in Tabl e 1 2 .
Table 12. Status Bit Code Definitions
ST1:ST0 Content in Bits[D15:D0]
00 Error data for sensor data response 01 Valid sensor data 10 Sensor self-test data 11 Read/write response
There are two independent conditions that can result in the ST bits being set to 0b00 during a sensor data response: self-test or PLL. The self-test response is sufficiently different from its nominal value. Refer to the Specifications section for the appropriate limits. When the sensor data response is a PLL, the PLL fault is active.
P
A parity bit (P) is required for all master-to-slave data transmis­sions. Communications protocol requires one parity bit to achieve odd parity for the entire 32-bit command. Bits that are in don’t care positions remain factored into the parity calculation.
P0
P0 is the parity bit that establishes odd parity for Bits[31:16] of the device response.
P1
P1 is the parity bit that establishes odd parity for the entire 32-bit device response.
RE
RE is the communications error bit transmitted from the ADXRS450 device to the control module. Request errors (RE) can occur when
An invalid command is sent from the control module.
The read/write command specifies an invalid memory
register.
The write command attempted to a nonwriteable memory
register.
DU
As expressed in Ta bl e 10 , the sequential transfer delay for writing data to a memory register (for example, DNC0) results in a sequential transfer delay of 0.1 ms. If a successive write command is issued to the device prior to the completion of the sequential transfer delay, the command is ignored and the device issues a data unavailable (DU) error response. However, a read command or sensor data request can be issued after a sequential transfer delay of only 10 µs is observed. Regardless of the com­mands that are subsequently issued to the device, when a write procedure has been initiated, the operation proceeds through to completion (requiring 17 ms).
Rev. B | Page 15 of 28
Page 16
ADXRS450 Data Sheet

Fault Register Bit Definitions

This section describes the bits available for signaling faults to the user. The individual bits of the fault register are updated asynchronously depending on their respective detection criteria; however, it is recommended that the fault register be read at a rate of at least 250 Hz. When asserted, the individual status bit does not deassert until it is read by the master device. If the error persists after a fault register read, the status bit immediately reasserts, and remains asserted until the next sequential command/ response exchange. The full fault register is appended to every sensor data request. It can also be accessed by issuing a read command to Register 0x0A.
Table 13. Quick Guide—Fault Register Bit Definitions
Bit Name Description
PLL PLL failure Q Quadrature error NVM Nonvolatile memory fault (NVM) POR Power-on reset failed to initialize UV Regulator undervoltage Amp Amplitude detection failure PWR Power regulation failed: overvoltage/undervoltage CST Continuous self-test failure CHK Check: generate faults OV Regulator overvoltage Fail Failure that sets the ST[1:0] bits to 0b00
PLL
PLL is the bit indicating that the device has had a failure in the phase-locked loop functional circuit block. This occurs when the PLL has failed to achieve sync with the resonator structure. If the PLL status flag is active, the ST bits of the sensor data response are set to 0b00, indicating that the response contains potentially invalid rate data.
Q
A Q fault can be asserted based on two independent quadrature calculations. Located in the quad memory (Register 0x08) is a value corresponding to the total instantaneous quadrature present in the device. If this value exceeds 4096 LSB, a Q fault is issued. Because quadrature build-up can contribute to an offset error, the ADXRS450 has integrated methods for dynamically cancelling the effects of quadrature. An internal quadrature accumulator records the amount of quadrature correction performed by the ADXRS450. Excessive quadrature is associated with offset errors. A Q fault is issued when the quadrature error (Q) present in the device has contributed to an equivalent of 4°/sec (typical) of rate offset.
NVM
An NVM error transmits to the control module when the internal NVM data fails a checksum calculation. This check is performed once every 50 µs, and does not include the DNC0 or PID memory registers.
POR
An internal check is performed at the time of device startup to ensure that the volatile memory of the device is functional. This is accomplished by programming a known value from the device ROM into a volatile memory register. This value is then conti­nuously compared to the known value in ROM every 1 µs for the duration of device operation. If the value stored in the volatile memory changes, or does not match the value stored in ROM, the POR error flag is asserted. The value stored in ROM is rewritten to the volatile memory upon a device power cycle.
PWR
The device performs a continuous check of the internal 3 V regulated voltage level. If either an overvoltage (OV) or under­voltage (UV) fault is asserted, then the power (PWR) bit is also asserted. This condition occurs if the regulated voltage is observed to be either above 3.3 V or below 2.77 V. An internal low-pass filter removes high frequency glitching effects to prevent the PWR bit from asserting unnecessarily. To determine if the fault is a result of an overvoltage or undervoltage condition, the OV and UV fault bits must be analyzed.
CST
The ADXRS450 is designed with continuous self-test (CST) functionality. Measured self-test amplitudes are compared against the limits presented in Tab l e 1. Deviations from this value are what result in reported self-test errors. There are two thresholds for a self-test failure.
Self-test value > ±512 LSB from nominal results in an
assertion of the self-test flag in the fault register.
Self-test value > ±1856 LSB from nominal results in both
an assertion of the self-test flag in the fault register as well as setting the ST[1:0] bits to 0b00, indicating that the rate data contained in the sensor data response is potentially invalid.
CHK
The control module transmits the check (CHK) bit to the ADXRS450 as a method of generating faults. By asserting the CHK bit, the device creates conditions that result in the generation of all faults represented through the fault register. For example, the self-test amplitude is deliberately altered to exceed the fault detection threshold, resulting in a self-test error. In this way, the device is capable of checking both its ability to detect a fault condition, as well as its ability to report that fault to the control module.
The fault conditions are initiated nearly simultaneously; however, the timing for receiving fault codes when the CHK bit is asserted is dependent upon the time required to generate each unique fault. It takes no more than 50 ms for all of the internal faults to be gener­ated and for the fault register to be updated to reflect the condition of the device. Until the CHK bit is cleared, the status bits (ST[1:0]) are set to 0b10, indicating that the data should be interpreted by the control module as self-test data. After the CHK bit is
Rev. B | Page 16 of 28
Page 17
Data Sheet ADXRS450
deasserted, the fault conditions require an additional 50 ms to decay, and the device to return to normal operation.
OV
The overvoltage (OV) fault bit asserts if the internally regulated voltage (nominally 3 V) is observed to exceed 3.3 V. This measure­ment is low-pass filtered to prevent artifacts such as noise spikes from asserting a fault condition. When an OV fault has occurred, the PWR fault bit is asserted simultaneously. Because the OV fault bit is not transmitted as part of a sensor data request, it is recommended that the user read back the FAULT1 and FAULT0 memory registers upon the assertion of a PWR error. This allows the user to determine the specific error condition.
UV
The undervoltage (UV) fault bit asserts if the internally regu­lated voltage (nominally 3 V) is observed to be less than 2.77 V. This measurement is low-pass filtered to prevent artifacts such as noise spikes from asserting a fault condition. When a UV fault has occurred, the PWR fault bit is asserted simultaneously. As the UV fault bit is not transmitted as part of a sensor data request, it is recommended that the user read back the FAULT1 and FAULT0 memory registers upon the assertion of a PWR error. This allows the user to determine the specific error condition.
Fail
The fail flag is asserted when a condition arises such that the ST[0:1] bits are set to 0b00. This indicates that the device has experienced a gross failure, and that the sensor data could potentially be invalid.
Amp
The amp fault bit is asserted when the measured amplitude of the silicon resonator has been significantly reduced. This con­dition can occur if the voltage supplied to CP5 has fallen below the requirements of the internal voltage regulator. This fault bit is OR’ed with the CST fault such that during a sensor data request, the CST bit position represents either an amp failure or a CST failure. The full status register can then be read from memory to validate the specific failure.

K-Bit Assertion: Recommended Start-Up Routine

Figure 27 illustrates a recommended start-up routine that can be implemented by the user. Alternate start-up sequences can be employed; however, ensure that the response from the ADXRS450 is handled correctly. If implemented immediately after power is applied to the device, the total time to implement the following fault detection routine is approximately 200 ms.
As described in the Device Data Latching section, the data present in the device upon the assertion of the next sequential command/response exchange. This results in an apparent one transaction delay before the data resulting from the assertion of the CHK command is reported by the device. For all other read/write interactions with the device, no such delay exists, and the MOSI command is serviced during the next sequential command/response exchange. Note that when the CHK bit is deasserted, if the user tries to obtain data from the device before the CST fault flag has cleared, the device reports the data as error data.
CS
signal is used in the
Rev. B | Page 17 of 28
Page 18
ADXRS450 Data Sheet
CS
MOSI: SENSOR DATA REQUEST CHK COMMAND ASSERTED
MISO: ST ANDARD INITIAL RESPONSE
DATA LATCH POINT
MOSI: SENSOR DATA REQUEST THIS CLEARS THE CHK BIT
MISO: SENS OR DATA RESPONSE
XX X
MOSI: SENSOR DATA REQUEST
MISO: CHK RESPONSE ST[1:0] = 0b10
MOSI: SENSOR DATA REQUEST
MISO: CHK RESP ONSE ST[1:0] = 0b10
SCLK
MOSI
MISO
POWER IS APPLIED TO THE DEVICE. WAIT 100ms TO ALLOW FOR THE INTERNAL CIRCUITRY TO BE INITIALIZED.
32 CLOCK
CYCLES
t = 100ms t = 150ms t = 200ms t = 200ms +
ONCE THE 100ms S TART-UP TIME HAS O CCURRED, THE MASTER DEVICE IS FREE TO ASSERT THE CHK COMMAND AND START T HE PROCESS OF INTERNAL ERROR CHECKING. DURING THE FIRST COMMAND/ RESPONSE EXCHANGE AFTER POW ER ON, THE ADXRS450 HAS BEEN DESIGNED TO ISSUE A PREDEFINED RESPONSE.
32 CLOCK
CYCLES
0x…0x0000001
A 50ms DELAY IS REQUIRED SO THAT THE G ENERATION OF FAULTS WITHIN THE DEVICE IS ALL OWED TO COMPLETE . HOWEVE R, AS THE DEVICE DATA IS LATCHED BEFORE THE CHK COMMAND IS ASSERTED, THE DEVICE RESPONSE DURING THIS COMMAND/RESPO NSE EXCHANGE DOES NO T CONTAIN FAUL T INFORMATION. THIS RESPONSE CAN BE DISCARDED.
32 CLOCK
CYCLES
0x20000000x20000000x2000003 0x2000000
0x…FF OR 0x …FE
(PARITY DEPE NDENT)
ANOTHER 50ms DELAY NEEDS TO BE OBSERVED TO ALLOW T HE FAULT CONDITIONS TO CLEAR. IF THE DEVICE I S FUNCTIO NING PROPERLY, THE MISO RESPONSE CONT AINS ALL ACTIVE FAULTS, AS WE LL AS HAVING SET T HE MESSAGE FORMAT TO SELF-TEST DATA. THIS I S INDICATED THROUGH THE S T BITS BEING SET TO 0b10.
THE FAULT BITS OF THE ADXRS450 REMAIN ACTIVE UNTIL CLEARED. DUE TO THE REQUIRED DE CAY PERIOD FOR EACH FAULT CONDITIO N, FAULT CONDITIO NS REMAIN PRESENT UPON THE IMMEDIATE DEASSERTIO N OF THE CHK COMMAND. THIS RESULTS IN A S ECOND SEQUENTIAL RESPONSE IN WHICH THE FAUL T BITS ARE ASSERTED. AG AIN, THE RESPONSE IS FORMATT ED AS SELF-T EST DATA INDICATING THAT THE FAULT BITS HAVE BEEN SET INTENTIONALLY.
Figure 27. Recommended Start-Up Sequence
32 CLOCK
CYCLES
0x…FF OR 0x… FE
(PARITY DEPE NDENT)
t
TD
t = 200ms + 2
ALL FAULT CONDITIO NS ARE CLEARED, AND ALL SUBSEQUENT DATA EXCHANGES NEED ONLY OBSERVE THE SEQUENTIAL TRANSFER DELAY TIMING PARAMETER.
t
TD
08952-020
Rev. B | Page 18 of 28
Page 19
Data Sheet ADXRS450

SPI RATE DATA FORMAT

The ADXRS450 gyroscope transmits rate data in a 16-bit format, as part of a 32-bit SPI data frame. See Tab le 9 for the full 32-bit format of the sensor data request response. The rate data is trans­mitted MSB first, from D15 to D0. The data is formatted as a twos complement number, with a scale factor of 80 LSB/°/sec.
Table 14. Rate Data
14-Bit Rate Data
Decimal (LSBs) Hex (D15:D0)
+32,767 0x7FFF Rate data (not guaranteed) Maximum possible positive data value … … … … +24,000 0x5DC0 Rate data +300 degrees per second rotation (positive FSR) … … … … +160 0x00A0 Rate data +2 degrees per second rotation +80 0x0050 Rate data +1 degree per second rotation … … … … +40 0x0028 Rate data +1/2 degree per second rotation +20 0x0014 Rate data +1/4 degree per second rotation … … … … 0 0x 0000 Rate data Zero rotation value … … …
−20 0xFFEC Rate data −1/4 degree per second rotation
−40 0xFFD8 Rate data −1/2 degree per second rotation … … …
−80 0xFFB0 Rate data −1 degree per second rotation
−160 0xFF60 Rate data −2 degree per second rotation … … …
−24,000 0xA240 Rate data −300 degree per second rotation (negative FSR) … … …
−32,768 0x8000 Rate data (not guaranteed) Maximum possible negative data value
Data Type Description
Therefore, the highest obtainable value for positive (clockwise) rotation is 0x7FFF (decimal +32,767), and for counterclockwise rotation is 0x8000 (decimal −32,768). Performance of the device is not guaranteed above ±24,000 LSB (±300°/sec).
Rev. B | Page 19 of 28
Page 20
ADXRS450 Data Sheet

MEMORY MAP AND REGISTERS

MEMORY MAP

The following is a list of the memory registers that are available to be read from or written to by the customer. See the previous section SPI Communication Protocol for the proper input sequence to read/write a specific memory register. Each memory register is comprised of eight bits of data, however, when a read request is performed, the data always returns as a 16-bit message. This is accomplished by appending the data
Table 15. Memory Register Map
Address Register Name MSB D6 D5 D4 D3 D2 D1 LSB
0x00 RATE1 RTE15 RTE14 RTE13 RTE12 RTE11 RTE10 RTE9 RTE8
0x01 RATE0 RTE7 RTE6 RTE5 RTE4 RTE3 RTE2 RTE1 RTE0
0x02 TEM1 TEM9 TEM8 TEM7 TEM6 TEM5 TEM4 TEM3 TEM2
0x03 TEM0 TEM1 TEM0 (Unused) (Unused) (Unused) (Unused) (Unused) (Unused)
0x04 LOCST1 LCST15 LCST14 LCST13 LCST12 LCST11 LCST10 LCST9 LCST8
0x05 LOCST0 LCST7 LCST6 LCST5 LCST4 LCST3 LCST2 LCST1 LCST0
0x06 HICST1 HCST15 HCST14 HCST13 HCST12 HCST11 HCST10 HCST9 HCST8
0x07 HICST0 HCST7 HCST6 HCST5 HCST4 HCST3 HCST2 HCST1 HCST0
0x08 QUAD1 QAD15 QAD14 QAD13 QAD12 QAD11 QAD10 QAD9 QAD8
0x09 QUAD0 QAD7 QAD6 QAD5 QAD4 QAD3 QAD2 QAD1 QAD0
0x0A FAULT1 (Unused) (Unused) (Unused) (Unused) FAIL AMP OV UV
0x0B FAULT0 PLL Q NVM POR PWR CST CHK 0
0x0C PID1 PIDB15 PIDB14 PIDB13 PIDB12 PIDB11 PIDB10 PIDB9 PIDB8
0x0D PID0 PIDB7 PIDB6 PIDB5 PIDB4 PIDB3 PIDB2 PIDB1 PIDB0
0x0E SN3 SNB31 SNB30 SNB29 SNB28 SNB27 SNB26 SNB25 SNB24
0x0F SN2 SNB23 SNB22 SNB21 SNB20 SNB19 SNB18 SNB17 SNB16
0x10 SN1 SNB15 SNB14 SNB13 SNB12 SNB11 SNB10 SNB9 SNB8
0x11 SN0 SNB7 SNB6 SNB5 SNB4 SNB3 SNB2 SNB1 SNB0
0x12 DNC1 (Unused) (Unused) (Unused) (Unused) (Unused) (Unused) DNCB9 DNCB8
0x13 DNC0 DNCB7 DNCB6 DNCB5 DNCB4 DNCB3 DNCB2 DNCB1 DNCB0
from the next, sequential register to the memory address that was specified. Data is transmitted MSB first. For proper acquisition of data from the memory register, make the read request to the even numbered register address only. Following the memory map (see Tabl e 15 ) is the explanation of the significance of each memory register.
Rev. B | Page 20 of 28
Page 21
Data Sheet ADXRS450

MEMORY REGISTER DEFINITIONS

The SPI accessible memory registers are described in this section. As explained in the previous section, when requesting data from a memory register, only the first sequential memory address need be addressed. The data returned by the device contain 16 bits of memory register information. Bits[15:8] contain the MSB of the requested information, and Bits[7:0] contain the LSB.

Rate Registers

Addresses: 0x00 (RATE1)
0x01 (RATE0)
Register update rate: 500 Hz
Scale factor: 80 LSB/°/sec
The rate registers contain the temperature compensated rate output of the device filtered to 80 Hz. This data can also be accessed by issuing a sensor data read request to the device. The data is pre­sented as a 16-bit, twos complement number.
MSB LSB
D15 D14 D13 D12 D11 D10 D9 D8 D7 D6 D5 D4 D3 D2 D1 D0

Temperature (TEMx) Registers

Addresses: 0x02 (TEM1),
0x03 (TEM0)
Register update rate: 500 Hz
Scale factor: 5 LSB/°C
The TEM register contains a value corresponding to the temper­ature of the device. The data is presented as a 10-bit, twos complement number. 0 LSB corresponds to a temperature of approximately 45°C.
MSB LSB
D9 D8 D7 D6 D5 D4 D3 D2 D1 D0
Table 16.
Temperature Value of TEM1:TEM0
45°C 0000 0000 00XX XXXX 85°C 0011 0010 00XX XXXX 0°C 1100 0111 11XX XXXX

Low CST (LOCST) Memory Registers

Addresses: 0x04 (LOCST1)
0x05 (LOCST0)
Register update rate: 1000 Hz
Scale factor: 80 LSB/°/sec
(Unused)
The LOCST memory registers contain the value of the temperature compensated and low-pass filtered continuous self-test delta. This value is a measure of the difference between the positive and negative self-test deflections and corresponds to the values presented in Tabl e 1. The device issues a CST error if the value of self-test exceeds the established self-test limits. The self-test data is filtered to 2 Hz to prevent false triggering of the CST fault bit. The data is presented as a 16-bit, twos complement number, with a scale factor of 80 LSB/°/sec.
MSB LSB
D15 D14 D13 D12 D11 D10 D9 D8 D7 D6 D5 D4 D3 D2 D1 D0

High CST (HICST) Memory Registers

Addresses: 0x06 (HICST1),
0x07 (HICST0)
Register update rate: 1000 Hz
Scale factor: 80 LSB/°/sec
The HICST register contains the unfiltered self-test information. The HICST data can be used to supplement fault diagnosis in safety critical applications as sudden shifts in the self-test response can be detected. However, the CST bit of the fault register is not set when the HICST data is observed to exceed the self-test limits. Only the LOCST memory registers, which are designed to filter noise and the effects of sudden temporary self-test spiking due to external disturbances, control the assertion of the CST fault bit. The data is presented as a 16-bit, twos complement number.
MSB LSB
D15 D14 D13 D12 D11 D10 D9 D8 D7 D6 D5 D4 D3 D2 D1 D0

Quad Memory Registers

Addresses: 0x08 (QUAD1)
0x09 (QUAD0)
Register update rate: 250 Hz
Scale factor: 80 LSB/°/sec equivalent
The quad memory registers contain a value corresponding to the amount of quadrature error present in the device at a given time. Quadrature can be likened to a measurement of the error of the motion of the resonator structure, and can be caused by stresses and aging effects. The quadrature data is filtered to 80 Hz and can be read frequently to detect sudden shifts in the level of quadrature. The data is presented as a 16-bit, twos complement number.
MSB LSB
D15 D14 D13 D12 D11 D10 D9 D8 D7 D6 D5 D4 D3 D2 D1 D0
Rev. B | Page 21 of 28
Page 22
ADXRS450 Data Sheet

Fault Registers

Serial Number (SN) Registers

Addresses: 0x0A (FAULT1)
0x0B (FAULT0)
Register update rate: Not applicable
Scale factor: Not applicable
The fault register contains the state of the error flags in the device. The FAULT0 register is appended to the end of every device data transmission (see Table 1 3); however, this register can also be accessed independently through its memory location. The individual fault bits are updated asynchronously, requiring <5 µs to activate, as soon as the fault condition exists on-chip. When toggled, each fault bit remains active until the fault register is read or a sensor data command is received. If the fault is still active after the bit is read, the fault bit immediately reasserts itself.
MSB LSB
(Unused) FAIL AMP OV UV
PLL Q NVM POR PWR ST CHK 0

Part ID (PID) Registers

Addresses: 0x0C (PID1)
0x0D (PID0)
Register update rate: Not applicable
Scale factor: Not applicable
The part identification registers contain a 16-bit number identi­fying the version of the ADXRS450. Combined with the serial number, this information allows for a higher degree of device individualization and tracking. The initial product ID is R01 (0x5201), with subsequent versions of silicon incrementing this value to R02, R03, and so forth.
MSB LSB
D15 D14 D13 D12 D11 D10 D9 D8 D7 D6 D5 D4 D3 D2 D1 D0
Addresses: 0x0E (SN3)
0x0F (SN2)
0x10 (SN1)
0x11 (SN0)
Register update rate: Not applicable
Scale factor: Not applicable
The serial number registers contain a 32-bit identification number that uniquely identifies the device. To read the entire serial number, two memory read requests must be initiated. The first read request to Register 0x0E returns the upper 16 bits of the serial number, and the following read request to Register 0x10 returns the lower 16 bits of the serial number.
MSB LSB
D31 D30 D29 D28 D27 D26 D25 D24 D23 D22 D21 D20 D19 D18 D17 D16 D15 D14 D13 D12 D11 D10 D9 D8 D7 D6 D5 D4 D3 D2 D1 D0

Dynamic Null Correction (DNC) Registers

Addresses: 0x12 (DNC1)
0x13 (DNC0)
Register update rate: Not applicable
Scale factor: 80 LSB/°/sec
The dynamic null correction register is the only register with write access available to the user. The user can make small adjustments to the rateout of the device by asserting these bits. This 10-bit register allows the user to adjust the static rateout of the device by up to ±6.4°/sec.
MSB LSB
(Unused) D9 D8
D7 D6 D5 D4 D3 D2 D1 D0
Rev. B | Page 22 of 28
Page 23
Data Sheet ADXRS450
9

PACKAGE ORIENTATION AND LAYOUT INFORMATION

A
D
X
14
R
S
4
C
K
A
5
G
0
E
F
R
O
N
T
)
8
(P
A
1
NOTES
1. THE LCC_V PACKAGE HAS TWO TERMINALS ON TWO FACES; HOWEVER, THE TERMINALS ON THE BACK SIDE ARE FOR INTERNAL EVALUAT ION ONL Y AND SHOULD NOT BE USED IN THE END AP PLICATION. T HE TERMINAL S ON THE BO TTO M OF THE PACKAGE INCO RPORATE METALL IZATI ON BUMPS T HAT ENSURE A MINIMUM SOLDER THICKNESS FOR IMPROVED SOLDER JOINT RELIABILITY. THESE BUMPS ARE NOT PRESENT ON THE BACK SIDE TERM INALS AND, THEREFO RE, POO R SOLDER JOINT REL IABIL ITY CAN BE ENCOUNTERED IF USED IN THE END APPLICATION. SEE THE OUTLINE DIMENSIONS SECTION FOR A SCHEMATIC OF THE LCC_V PACKAGE.
Figure 28. 14-Terminal Ceramic LCC_V Vertical Mount
11.232
1.27
.462
0.572
1.691
Figure 29. Sample SOIC_CAV Solder Pad Layout (Land Pattern), Dimensions
Shown In Millimeters, Not To Scale
08952-022
7
08952-004
0.55
0.55
1.5
0.95
1 1
Not To Scale
1.55
2.55
5.55
2.55
Figure 30. LCC_V Solder Pad Layout, Dimensions Shown In Millimeters,
0.55
0.95
0.80.8
1.55
1.5
08952-024
Rev. B | Page 23 of 28
Page 24
ADXRS450 Data Sheet
SUPPLIER TP T
SUPPLIER
T
P
MAXIMUM RAMP-UP RATE = 3° C/sec MAXIMUM RAMP-DOWN RATE = 6°C/sec
T
L
T
SMAX
T
SMIN
TEMPERATURE
25
PREHEAT AREA
C
t
P
t
S
TIME 25°C TO PEAK
T
C
T
–5°C
C
TIME
USER TP T
Figure 31. Recommended Soldering Profile
C
USER
t
P
t
P
t
L
TC –5°C
08952-026
Table 17. Solder Profile Conditions
Conditions
Profile Feature
Sn63/Pb37 Pb Free
Average Ramp Rate (TL to TP) 3°C/sec maximum Preheat
Minimum Temperature (T Maximum Temperature (T
Time (T
T
to TL
SMAX
SMIN
to T
) (tS) 60 sec to 120 sec 60 sec to 120 sec
SMAX
) 100°C 150°C
SMIN
) 150°C 200°C
SMAX
Ramp-Up Rate 3°C/sec maximum
Time Maintained above Liquidous
Liquidous Temperature (TL) 183°C 217°C
Time (tL) 60 sec to 150 sec 60 sec to 150 sec Peak Temperature (TP) 240°C + 0°C/−5°C 260°C + 0°C/−5°C Time Within 5°C of Actual Peak Temperature (tP) 10 sec to 30 sec 20 sec to 40 sec Ramp-Down Rate 6°C/sec maximum Time 25°C to Peak Temperature 6 minutes maximum 8 minutes maximum
Rev. B | Page 24 of 28
Page 25
Data Sheet ADXRS450

PACKAGE MARKING CODES

XRS450
BEYZ n
#YYWW
LLLLLLLLL
Figure 32. LCC_V and SOIC_CAV Package Marking Codes
LLLLLLLLL
Table 18. Package Code Designations
Marking Significance
XRS Angular rate sensor 450 Series number B Temperature Grade (−40°C to +105°C) RG Package designator (SOIC_CAV package) EY Package designator (LCC_V package) Z n #
RoHS compliant Revision number
Pb-Free designation YYWW Assembly date code LLLLLLLLL Assembly lot code (up to 9 characters)
XRS450 BRGZ n #YYWW
08952-027
Rev. B | Page 25 of 28
Page 26
ADXRS450 Data Sheet
C
V

OUTLINE DIMENSIONS

10.30 BSC
0.275 REF
7.70
7.55
7.40
INDICATOR
OPLANARITY
FRONT
9.20
9.00 SQ
8.80
0.10
3.73
3.58
3.43
0.28
0.18
0.08
PIN 1
0.50
0.45
0.40
16
1
9.59 BSC
1.27 BSC
0.75
0.70
0.65
9
8
7.80
BSC
10.42 BSC
0.25 GAGE PLANE
8° 4° 0°
1.50
1.35
1.20
0.58
0.48
DETAIL A
0.38
Figure 33. 16-Lead Small Outline, Plastic Cavity Package [SOIC_CAV]
(RG-16-1)
Dimensions shown in millimeters
IEW
4.40
8.08
8.00
7.92
0.350
0.305
0.260
7.18
7.10
7.02
4.00
3.60
DETAIL A
BACK VI EW
0.87
0.77
0.67
072409-B
1.175 REF
C0.30
REF
1.70 REF
(ALL PINS)
1.70 REF
(ALL PINS)
1 2 345 6 7
1.00
(PINS 2, 6)
1234567
14
13 12 11 10
1.40
(PINS 1,
7, 8, 14)
(PINS 3-5, 10-12)
BOTTOM VIEW ( PADS SIDE)
0.60
(PINS 3-5)
0.30 REF
0.40
0.50 TYP
1.60
(PINS 1, 7)
8
9
0.80
(PINS 2, 6, 9, 13)
0.675 NOM
0.500 MIN
0.30 REF
0.35 REF
0.35 REF
0.80 REF
(METALLIZATION BUMP BUMP HEIGHT 0.03 NOM)
SIDE VI EW
R0.20
REF
(PINS 2, 6)
Figure 34. 14-Terminal Ceramic Leadless Chip Carrier [LCC_V]
(EY-14-1)
Dimensions shown in millimeters
1.50
1.00
(PINS 9-10,
12-13)
8910
13 14
11 12
TERMINALS ON BACK SIDE OF PACKAGE ARE FOR EVALUATION TESTING ONLY.
0.80
(PINS 10, 11, 1 2)
04-08-2010-A
Rev. B | Page 26 of 28
Page 27
Data Sheet ADXRS450

ORDERING GUIDE

Temperature
Model1
ADXRS450BEYZ –40°C to +105°C 14-Terminal Ceramic Leadless Chip Carrier, Vertical Form [LCC_V] EY-14-1 ADXRS450BEYZ-RL –40°C to +105°C 14-Terminal Ceramic Leadless Chip Carrier, Vertical Form [LCC_V] EY-14-1 ADXRS450BRGZ –40°C to +105°C 16-Lead Small Outline, Plastic Cavity Package [SOIC_CAV] RG-16-1 ADXRS450BRGZ-RL –40°C to +105°C 16-Lead Small Outline, Plastic Cavity Package [SOIC_CAV] RG-16-1 EVAL-ADXRS450Z Evaluation Board SOIC_CAV EVAL-ADXRS450Z-V Evaluation Board LCC_V EVAL-ADXRS450Z-M
EVAL-ADXRS450Z-S
1
Z = RoHS Compliant Part.
Range Package Description
Analog Devices Inertial Sensor Evaluation System (Includes ADXRS450 Satellite)
ADXRS450 Satellite, Standalone, to be used with Inertial Sensor Evaluation System
Package Option
Rev. B | Page 27 of 28
Page 28
ADXRS450 Data Sheet
NOTES
©2011 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D08952-0-12/11(B)
Rev. B | Page 28 of 28
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