Datasheet ADUM6132 Datasheet (ANALOG DEVICES)

Page 1
Isolated Half-Bridge Gate Driver with
V
Integrated Isolated High-Side Supply

FEATURES

isoPower integrated isolated high-side supply 275 mW isolated dc-to-dc converter 200 mA output sink current, 200 mA output source current High common-mode transient immunity: >50 kV/μs Wide-body 16-lead SOIC package Safety and regulatory approvals (pending)
UL recognition
3750 V rms for 1 minute per UL 1577
CSA Component Acceptance Notice #5A
CSA/IEC 60950-1, 400 V rms
VDE certificate of conformity
DIN V VDE V 0884-10 (VDE V 0884-10):2006-12 V
= 560 V peak
IORM

APPLICATIONS

MOSFET/IGBT gate drivers Motor drives Solar panel inverters Power supplies
ADuM6132

GENERAL DESCRIPTION

The ADuM61321 is an isolated half-bridge gate driver that employs the Analog Devices, Inc., iCoupler® technology to provide an isolated high-side driver with an integrated 275 mW high-side supply. This supply, provided by an internal isolated dc-to-dc converter, powers not only the ADuM6132 high-side output but also any external buffer circuitry that is commonly used with the ADuM6132. This functionality eliminates the cost, space, and performance issues associated with external supply configurations such as a bootstrap circuit.
The architecture of the ADuM6132 isolates the high-side channel and the high-side power from the control and low­side interface circuitry. Care has been taken to ensure close matching between the high-side and low-side driver timing characteristics to reduce the need for a dead time margin.
In comparison to gate drivers that employ high voltage level translation methodologies, the ADuM6132 offers the benefit of true, galvanic isolation. The differential voltage between high-side and low-side channels can be as high as 800 V with good insulation lifetime (see Tab l e 12).
isoPower® uses high frequency switching elements to transfer power through its transformer. Special care must be taken during printed circuit board (PCB) layout to meet emissions standards. Refer to the AN-0971 Application Note for details on board layout considerations.

FUNCTIONAL BLOCK DIAGRAM

1
V
DD
2
GND
3
V
DDL
4
V
IA
V
5
IB
V
6
OB
7
DDB
8
GND
1
Protected by U.S. Patents 5,952,849; 6,873,065; 6,903,578; 7,075,329; and other pending patents
Rev. 0
Information furnished by Analog Devices is believed to be acc responsibility is assumed by Analog Devices for its use, nor for any rights of third parties that may result from its use. Specifications subj license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.
urate and reliable. However, no
infringements of patents or other
ect to change without notice. No
ENCODE
SHIFT
LEVEL-
ISOLATED DC-TO-DC
CONVERTER
Figure 1.
LEVEL-SHIFT
DECODE AND
ADuM6132
One Technology Way, P Tel: 781.329.4700 www.analog.com Fax: 781.461.3113 ©2008 Analog Devices, Inc. All rights reserved.
16
V
ISO
GND
15
ISO
14
GND
A
13
V
DDA
V
12
OA
11
NC
10
NC
GND
9
ISO
07393-001
.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Page 2
ADuM6132

TABLE OF CONTENTS

Features .............................................................................................. 1
Applications ....................................................................................... 1
General Description ......................................................................... 1
Functional Block Diagram .............................................................. 1
Revision History ............................................................................... 2
Specifications ..................................................................................... 3
Electrical Characteristics ............................................................. 3
Package Characteristics ............................................................... 4
Regulatory Information ............................................................... 4
Insulation and Safety Related Specifications ............................ 4
DIN V VDE V 0884-10 (VDE V 0884-10) Insulation
Characteristics .............................................................................. 5
Recommended Operating Conditions ...................................... 5
Absolute Maximum Ratings ............................................................ 6

REVISION HISTORY

7/08—Revision 0: Initial Version
ESD Caution...................................................................................6
Pin Configuration and Function Descriptions ..............................7
Typical Performance Characteristics ..............................................8
Terminology .................................................................................... 10
Applications Information .............................................................. 11
Typical Application Usage ......................................................... 11
PCB Layout ................................................................................. 11
Thermal Analysis ....................................................................... 12
Undervoltage Lockout ............................................................... 12
Propagation Delay-Related Parameters ................................... 13
Magnetic Field Immunity .......................................................... 13
Insulation Lifetime ..................................................................... 14
Outline Dimensions ....................................................................... 15
Ordering Guide .......................................................................... 15
Rev. 0 | Page 2 of 16
Page 3
ADuM6132

SPECIFICATIONS

ELECTRICAL CHARACTERISTICS

All voltages are relative to their respective ground; 4.5 V ≤ VDD = V specifications apply over the entire recommended operating range, unless otherwise noted. All typical specifications are at T V
= V
DD
= 5.0 V, V
DDL
= 15 V, V
DDB
DDA
= V
ISO
.
Table 1.
Parameter Symbol Min Typ Max Unit Test Conditions/Comments
DC SPECIFICATIONS
Isolated Power Supply
Input Current, Quiescent I
280 mA I
DD(Q)
Input Current, Loaded IDD 350 mA I Maximum Output Current Output Voltage V
1
I
22 mA 12.5 V V
ISO(MAX)
12.5 15 17 V 0 mA ≤ I
ISO
Logic Supply
Input Current I
Output Supplies, Channel A or Channel B
Supply Current, Quiescent I Supply Current, fIN = 20 kHz I Supply Current, fIN = 100 kHz I Supply Current, fIN = 1000 kHz I
1.8 3.0 mA
DDL
2
, I
DDA(Q)
DDA(20)
DDA(100)
DDA(1000)
1.0 2.0 mA
DDB(Q)
, I
1.1 2.1 mA CL = 200 pF
DDB(20)
, I
DDB(100)
, I
DDB(1000)
Logic Inputs, Channel A or Channel B
Input Current IIA, I Logic High Input Voltage V Logic Low Input Voltage V
IB
, V
0.7 × V
IAH
IBH
, V
IAL
IBL
Outputs, Channel A or Channel B
Channel A High Level Output Voltage V Channel B High Level Output Voltage V Low Level Output Voltages V
or V
3
3
I
Supply
DDB
High Level Output Current, Peak Low Level Output Current, Peak
Undervoltage Lockout, V
DDA
Positive Going Threshold V Negative Going Threshold V Hysteresis V
Undervoltage Lockout, V
DDL
Supply
4
Positive Going Threshold V Negative Going Threshold V Hysteresis V
4
V
OAH
V
OBH
0.1 V I
OAL,VOBL
I
, I
200 mA
OAH
OBH
, I
200 mA
OAL
OBL
DDAUV+, VDDBUV+
DDAUV−, VDDBUV−
, V
DDAUVH
DDBUVH
DDLUV+
DDLUV−
DDLUVH
SWITCHING SPECIFICATIONS
Minimum Pulse Width Maximum Switching Frequency Propagation Delay
1
PW 50 ns C
1
1
f
1000 kHz CL = 200 pF
IN
t
, t
40 60 100 ns CL = 200 pF
PHL
PLH
Change vs. Temperature 100 ps/°C Pulse Width Distortion, |t Channel-to-Channel Matching, Rising or
Falling Matching Edge Polarity Channel-to-Channel Matching, Rising vs.
Falling Opposite Edge Polarity
PLH
− t
| PWD 10 ns CL = 200 pF
PHL
1
1
tM2 20 ns CL = 200 pF
tM1 20 ns CL = 200 pF
≤ 5.5 V; 12.5 V ≤ V
DDL
≤ 17.0 V; V
DDB
DDA
= V
. All minimum/maximum
ISO
= 0 mA, dc signal inputs
ISO
= I
ISO
ISO(MAX)
ISO
ISO
1.3 2.3 mA CL = 200 pF
4.5 5.5 mA CL = 200 pF
−10 +0.01 +10 µA 0 V VIA, VIB ≤ 5.5 V
DDL
− 0.1
DDA
− 0.1 V I
DDB
0.3 × V
V I
V
V
DDL
= −1 mA
OAH
= −1 mA
OBH
, I
OAL
OBL
= 1 mA
11.0 11.7 12.3 V
10.0 10.7 11.2 V
1.0 V
3.5 4.2 V
3.1 3.8 V
0.5 V
= 200 pF
L
= 25°C,
A
≤ 17.0 V
≤ 22 mA
Rev. 0 | Page 3 of 16
Page 4
ADuM6132
Parameter Symbol Min Typ Max Unit Test Conditions/Comments
Part-to-Part Matching Output Rise Time (10% to 90%) tR 15 ns CL = 200 pF Output Fall Time (10% to 90%) tF 15 ns CL = 200 pF
1
See the section. Terminology
2
I
is supplied by the output of the integrated isolated dc-to-dc power supply. I
DDA
3
Duration less than 1 second. Average output current must conform to the limit shown in the section. Absolute Maximum Ratings
4
Undervoltage lockout (UVLO) holds the outputs in a low state if the corresponding input or output power supply is below the referenced threshold. Hysteresis is built
into the detection threshold to prevent oscillations and noise sensitivity.

PACKAGE CHARACTERISTICS

Table 2.
Parameter Symbol Min Typ Max Unit Test Conditions/Comments
Resistance (Input Side to High-Side Output) Capacitance (Input Side to High-Side Output)1 C Input Capacitance CI 4.0 pF Junction-to-Ambient Thermal Resistance θJA 45 °C/W 4-layer PCB
1
The device is considered a two-terminal device: Pin 1 through Pin 8 are shorted together, and Pin 9 through Pin 16 are shorted together.

REGULATORY INFORMATION

The ADuM6132 is pending approval by the organizations listed in Tab l e 3.
1
60 ns CL = 200 pF
is supplied by an external power connection to the V
DDB
1
R
1012
I-O
2.0 pF
I-O
pin. See Figure . 16
DDB
Table 3.
UL (Pending) CSA (Pending) VDE (Pending)
Recognized under UL 1577 component recognition program
Double/reinforced insulation, 3750 V rms isolation voltage
Approved under CSA Component Acceptance
1
Notice #5A Basic insulation per CSA 60950-1-03 and IEC 60950-1,
800 V rms (1131 V peak) maximum working voltage
Certified according to DIN V VDE V 0884-10 (VDE V 0884-10):2006-12
2
Reinforced insulation, 560 V peak
Reinforced insulation per CSA 60950-1-03 and IEC 60950-1, 400 V rms maximum working voltage
File E214100 File 205078 File 2471900-4880-0001
1
In accordance with UL 1577, each ADuM6132 is proof-tested by applying an insulation test voltage ≥4500 V rms for 1 second (current leakage detection limit = 10 µA).
2
In accordance with DIN V VDE V 0884-10, each ADuM6132 is proof-tested by applying an insulation test voltage ≥1050 V peak for 1 second (partial discharge detection
limit = 5 pC). The asterisk (*) marking branded on the component designates DIN V VDE V 0884-10 approval.

INSULATION AND SAFETY RELATED SPECIFICATIONS

Table 4.
Parameter Symbol Value Unit Test Conditions/Comments
Rated Dielectric Insulation Voltage 3750 V rms 1 minute duration Minimum External Air Gap (Clearance) L(I01) >8.0 mm
Minimum External Tracking (Creepage) L(I02) >8.0 mm
Minimum Internal Gap (Internal Clearance) 0.017 min mm Insulation distance through insulation Tracking Resistance (Comparative Tracking Index) CTI >175 V DIN IEC 112/VDE 0303 Part 1 Isolation Group IIIa Material Group (DIN VDE 0110, 1/89, Table 1)
Measured from input terminals to output terminals, shortest distance through air
Measured from input terminals to output terminals, shortest distance path along body
Rev. 0 | Page 4 of 16
Page 5
ADuM6132

DIN V VDE V 0884-10 (VDE V 0884-10) INSULATION CHARACTERISTICS

The ADuM6132 is suitable for reinforced electrical isolation only within the safety limit data. Maintenance of the safety data is ensured by protective circuits. The asterisk (*) marking on the package denotes DIN V VDE V 0884-10 approval.
Table 5.
Parameter Test Conditions/Comments Symbol Value Unit
Installation Classification per DIN VDE 0110
For Rated Mains Voltage ≤ 150 V rms I to IV For Rated Mains Voltage ≤ 300 V rms I to III For Rated Mains Voltage ≤ 400 V rms I to II
Climatic Classification 40/105/21 Pollution Degree (DIN VDE 0110, Table 1) 2 Maximum Working Insulation Voltage V Input-to-Output Test Voltage, Method B1
× 1.875 = VPR, 100% production test, tm = 1 sec,
V
IORM
partial discharge <5 pC
Input-to-Output Test Voltage, Method A VPR
After Environmental Tests Subgroup 1 V After Input and/or Safety Test Subgroup 2
× 1.6 = VPR, tm = 60 sec, partial discharge <5 pC 896 V peak
IORM
× 1.2 = VPR, tm = 60 sec, partial discharge <5 pC 672 V peak
V
IORM
and Subgroup 3
Highest Allowable Overvoltage Transient overvoltage, tTR = 10 sec VTR 6000 V peak Safety-Limiting Values
Maximum value allowed in the event of a failure
(see Figure 2) Case Temperature TS 150 °C Side 1 Current IS1 555 mA
Insulation Resistance at TS V
= 500 V RS >109 Ω
IO
600

RECOMMENDED OPERATING CONDITIONS

560 V peak
IORM
1050 V peak
V
PR
500
400
CURRENT (mA)
DD
300
200
100
SAFE OPERATING V
0
0 50 100 150 200
AMBIENT TEMPERATURE (°C)
Figure 2. Thermal Derating Curve, Dependence of Safety-Limiting Values
with Ambient Temperature per DIN V VDE V 0884-10
Table 6.
Parameter Rating
Operating Temperature Range, TA −40°C to +85°C Input Supply Voltage, VDD and V Channel A, Channel B Supply Voltage,
and V
V
DDA
DDB
1
1
4.5 V to 5.5 V
DDL
12.5 V to 17 V
Input Signal Rise and Fall Times 1 ms Common-Mode Transient Immunity,
−50 kV/µs to +50 kV/µs
Input to Output
Minimum Power-On Slew Rate (P
and V
V
DD
1
07393-002
All voltages are relative to their respective ground.
2
The ADuM6132 power supply may fail to properly initialize if VDD and V
applied too slowly. The power supply slew rate must be faster than specified over the entire turn-on ramp. Power-on should start from a completely discharged state.
DDL
2
SLEW
1 V/ms
),
are
DDL
Rev. 0 | Page 5 of 16
Page 6
ADuM6132

ABSOLUTE MAXIMUM RATINGS

TA = 25°C, unless otherwise noted.
Table 7.
Parameter Rating
Storage Temperature Range, TST −55°C to +150°C Ambient Operating Temperature
Range, T Input Supply Voltage, V Channel A, Channel B Supply
Voltage, V Input Voltage, VIA, V Output Voltage, V Output Voltage, V
A
, V
DDL
DD
1
, V
DDA
DDB
1
−0.5 V to V
IB
1
−0.5 V to V
OA
1
−0.5 V to V
OB
Average DC Output Current,
I
, IOB
OA
−40°C to +85°C
1
−0.5 V to +7.0 V
−0.5 V to +27 V
DDL
ISO
DDB
−10 mA to +10 mA
+ 0.5 V
+ 0.5 V
+ 0.5 V
Peak Output Current, IOA, IOB −200 mA to +200 mA Common-Mode Transients2 −100 kV/µs to +100 kV/µs
1
All voltages are relative to their respective ground.
2
Refers to common-mode transients across any insulation barrier. Common-
mode transients exceeding the absolute maximum ratings can cause latch-up or permanent damage.
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

ESD CAUTION

Rev. 0 | Page 6 of 16
Page 7
ADuM6132

PIN CONFIGURATION AND FUNCTION DESCRIPTIONS

1
V
DD
GND
2
V
3
DDL
V
4
IA
5
V
IB
V
6
OB
V
7
DDB
8
GND
NC = NO CONNECT
ADuM6132
TOP VIEW
(Not to Scale)
16
V
ISO
GND
15
ISO
GND
14
A
V
13
DDA
12
V
OA
NC
11
NC
10
9
GND
ISO
07393-003
Figure 3. Pin Configuration
Table 8. Pin Function Descriptions
Pin No. Mnemonic Description
1 V
DD
2, 8 GND 3 V 4 V 5 V 6 V 7 V
DDL
IA
IB
OB
DDB
9, 15 GND
Input Supply Voltage for Logic, 4.5 V to 5.5 V.
Ground Reference for Isolated Power Supply Output.
ISO
Input Supply Voltage for Isolated Power Supply, 4.5 V to 5.5 V. Ground Reference for Isolated Power Supply Input and Logic Inputs.
Logic Input A. Logic Input B. Output B (Nonisolated). Output B Supply Voltage Input (Nonisolated), 12.5 V to 17 V.
10, 11 NC No Connect. 12 VOA Output A (Isolated). 13 V 14 GNDA Output A Ground Reference. Must be connected externally to GND 16 V
Output A Supply Voltage Input. Must be connected externally to V
DDA
Isolated Power Supply Voltage Output.
ISO
ISO
ISO
Table 9. Truth Table (Positive Logic)
VIA Input VIB Input V
DDL
1
State V
State VOA Output VOB Output Notes
DDB
L L Powered Powered L L L H Powered Powered L H H L Powered Powered H L H H Powered Powered H H X X Unpowered Powered L L
returns to input state within 1 µs of V
V
OA
power restoration.
X X Powered Unpowered L L
1
L = low; H = high; X = high or low.
(Pin 16).
(Pin 15).
DDL
Rev. 0 | Page 7 of 16
Page 8
ADuM6132

TYPICAL PERFORMANCE CHARACTERISTICS

All typical performance curves are based on operation at TA = 25°C, unless otherwise noted.
16.0
1.2
15.5
15.0
VDD = 5.0V
ISO
VDD = 5.5V
External Load
(V)
14.5
ISO
V
14.0
13.5
13.0 0 5 10 15 20 25
Figure 4. Typical V
VDD = 4.5V
I
LOAD CURRENT (mA)
ISO
Supply Voltage vs. I
ISO
300
VDD = 4.5V
250
VDD = 5.0V
200
150
100
INPUT CURRENT (mA)
DD
I
50
0
0 5 10 15 20 25
I LOAD CURRENT (mA)
ISO
Figure 5. Typical IDD Supply Current vs. I
VDD = 5.5V
ISO
External Load
30
VDD = 5.5V
25
20
15
EFFICIENCY (%)
10
5
VDD = 4.5V
VDD = 5.0V
1.0
0.8 VDD = 4.5V
0.6
0.4
POWER DISSIPATION (W)
0.2
0
0 5 10 15 20 25
07393-024
VDD = 5.5V
I
LOAD CURRENT (mA)
ISO
Figure 7. Typical Total Power Dissipation vs. I
VDD = 5.0V
External Load
ISO
07393-027
14.8
14.6
14.4
14.2
14.0
13.8
13.6
13.4
AT 22mA LOAD (V)
ISO
13.2
V
13.0
12.8
12.6 –40 –20
07393-025
Figure 8. Typical V
VDD = 5.5V
VDD = 5.0V
VDD = 4.5V
0 20 40 60 80 100 120
AMBIENT TEMPERATURE (°C)
Output Voltage at Maximum Combined Load
ISO
07393-028
over Temperature
2500
VDD = 4.5V
POWER DISSIPATION ( mW)
2000
1500
1000
500
V
= 5.0V
DD
VDD = 5.5V
0
0 5 10 15 20 25
I
LOAD CURRENT (mA)
ISO
Figure 6. Typical V
Supply Efficiency vs. I
ISO
External Load
ISO
07393-026
Rev. 0 | Page 8 of 16
0
1 10 100 1000
V
LOAD IMPE DANCE (Ω)
ISO
Figure 9. Power Dissipation vs. Load Impedance for Fault Conditions
3-029 0739
Page 9
ADuM6132
6
4
5
4
3
CURRENT (mA)
2
DDA
I
1
0
0 200 400 600 800 1000
VOA DATA FREQUENCY (kHz )
Figure 10. Typical I
V
DDA
Supply Current, CL = 200 pF
DDA
= 15V
V
DDA
V
DDA
6
5
V
= 17V
= 15V
DDB
V
= 12.5V
DDB
CURRENT (mA)
I
DDB
4
3
2
V
DDB
1
= 17V
= 12.5V
3
2
OUTPUT VOLTAGE (V)
OL
1
V
030
07393-
0
50 100 150 200 2500
Figure 13. Typical VOL vs. IOL (VDD = V
IOL (mA)
= 5 V, V
DDL
DDA
= V
DDB
07393-033
= 12 V to 17 V)
70
65
t
CHA
PLH
60
t
CHA
PHL
PROPAGATI ON DELAY (n s)
55
OA
V
) OUTPUT VO LTAGE DRO P (V)
DD
– V
OH
(V
0
0 200 400 600 800 1000
VOB DATA FREQUENCY (kHz )
Figure 11. Typical I
Supply Current, CL = 200 pF
DDB
0
–1
–2
–3
–4
–5
Figure 12. Typical V
50 100 150 200 2500
IOH (mA)
Voltage Drop vs. IOH (VDD = V
OH
= V
V
DDA
= 12 V to 17 V)
DDB
DDL
= 5 V,
031
07393-
50
–50 –25 0 25 50 75 100
TEMPERATURE ( °C)
07393-034
Figure 14. Typical Channel A Propagation Delay vs. Temperature
70
t
CHB
65
60
PROPAGATI ON DELAY (ns)
55
OB
V
50
–50 –25 0 25 50 75 100
07393-032
TEMPERATURE ( °C)
PLH
t
CHB
PHL
035
07393-
Figure 15. Typical Channel B Propagation Delay vs. Temperature
Rev. 0 | Page 9 of 16
Page 10
ADuM6132

TERMINOLOGY

Channel-to-Channel Matching
Channel-to-channel matching with rising or falling matching edge polarity is the magnitude of the propagation delay differ­ence between two channels of the same part when the inputs are both rising edges or both falling edges. The loads on each channel are equal.
Channel-to-channel matching with rising vs. falling opposite edge polarity is the magnitude of the propagation delay differ­ence between two channels of the same part when one input is a rising edge and one input is a falling edge. The loads on each channel are equal.
Maximum Output Current
The maximum output current is the maximum isolated supply current that the ADuM6132 can provide. This current supports external loads as well as the needs of the ADuM6132 Channel A output circuitry. This is achieved via external connection of the V
pin to the V
ISO
pin and of the GND
DDA
pin to the GNDA pin
ISO
(see Figure 16). The net current available to power external loads is the ADuM6132 output current, I supply current, I
DDA
.
, minus the Channel A
ISO
Maximum Switching Frequency
The maximum switching frequency is the maximum signal frequency at which the specified timing parameters are guar­anteed. Operation beyond the maximum switching frequency is not recommended, because high switching rates can cause droop in the output supply voltage.
Minimum Pulse Width
The minimum pulse width is the shortest pulse width at which the specified pulse width distortion is guaranteed. Operation below the minimum pulse width is not recommended.
Part-to-Part Matching
Part-to-part matching is the magnitude of the propagation delay difference between the same channels of two different parts. This includes rising vs. rising edges, falling vs. falling edges, or rising vs. falling edges. The supply voltages, temp­eratures, and loads of each part are equal.
Propagation Delay
The propagation delay is the time that it takes a logic signal to propagate through a component. The propagation delay to a logic low output may differ from the propagation delay to a logic high output.
The t of the falling edge of the V the falling edge of the V
propagation delay is measured from the 50% level
PHL
or VIB signal to the 50% level of
IA
or VOB signal. The t
OA
propagation
PLH
delay is measured from the 50% level of the rising edge of the V
or VIB signal to the 50% level of the rising edge of the VOA
IA
or V
signal.
OB
Capacitive Load (C
)
L
The output capacitive load simulates a typical FET, IGBT, or buffer for timing or current measurements. This load includes all discrete and parasitic capacitive loads on the output.
Rev. 0 | Page 10 of 16
Page 11
ADuM6132

APPLICATIONS INFORMATION

TYPICAL APPLICATION USAGE

The architecture of the ADuM6132 is ideal for motor drive and inverter applications where the low-side channels are common to the controller. This arrangement requires only two isolation regions in a package. All the isolated signals and the isolated power are grouped on one side of the package to maintain full package creepage and clearance. The low-side driver, as well as the control signals, share a common reference and are also grouped.
To maximize the effectiveness of external bypass capacitors, the isoPower dc-to-dc converter is not internally tied to the data channels, and should be treated as a completely independent subsystem, except for a UVLO function (see the Undervoltage Lockout section). This means that power must be applied to V to operate the dc-to-dc converter. Power must also be applied to V
DDL
and V
to operate the data input and the Channel B
DDB
driver output. On the secondary side, the power generated at the V
pin must be applied as an input power supply to the
ISO
V
pin. GND
DDA
and GNDA must also be connected.
ISO
The ADuM6132 is intended for use in driving low gate capacitance transistors (200 pF typically). Most high voltage applications involve larger transistors than this. To accom­modate these applications, users can implement a buffer configuration with the ADuM6132, as shown in Figure 16. In many cases, this buffer configuration is the least expensive option to drive high capacitance devices and provides the greatest amount of design flexibility. The precise buffer/high
DD
voltage transistor combination can be selected to suit the requirements of the application.

PCB LAYOUT

The ADuM6132 digital isolator with integrated 275 mW isoPower dc-to-dc converter requires no external interface circuitry for the logic interfaces. Power supply bypassing is required at the input and output supply pins (see Figure 17). The power supply section of the ADuM6132 uses a very high oscillator frequency to efficiently pass power through its chip scale transformers. In addition, the normal operation of the data section of the iCoupler introduces switching transients on the power supply pins. Bypass capacitors are required for several operating frequencies. Noise suppression requires a low ESR, high frequency capacitor; ripple suppression and proper regulation require a large value capacitor in parallel (see Ta b le 1 0). The total lead length between both ends of the capacitor and the input power supply pin should not exceed 20 mm.
Table 10. Recommended Bypass Capacitors
Supply Pins Bypass Capacitors
VDD 1, 2 0.1 F, 10 F V
7, 8 0.1 F
DDB
V
2, 3 0.1 F
DDL
V
13, 14 0.1 F
DDA
V
15, 16 0.1 F, 10 F
ISO
+5V
GND
+5V
+15V
10µF
0.1µF
0.1µF
0.1µF
GND
V
V
GND
V
DDL
V
DDB
V
ADuM6132
V
DD
1
2
3
IA
4
7
IB
5
8
ISOLATED
DC-TO-DC
CONVERTER
ISOLATED
GATE
DRIVE
NONISOL ATED
GATE
DRIVE
16
15
9
13
12
14
6
ISO
GND
GND
V
DDA
V
OA
GND
V
OB
0.1µF
ISO
ISO
0.1µF
A
I
I
DDAIAVAIL
C
BUF
R
BUF
C
BUF
R
ISO
+15V
BUF
GND
BUFFER
R
G
BUFFER
R
G
V
DC+
V
DC–
7393-016 0
Figure 16. Typical Application Circuit
Rev. 0 | Page 11 of 16
Page 12
ADuM6132
In applications involving high common-mode transients, care should be taken to ensure that board capacitive coupling across the isolation barrier is minimized. Furthermore, the board layout should be designed so that any coupling that does occur affects all pins on a given component side equally. Failure to ensure this may cause voltage differentials between pins that exceed the absolute maximum ratings of the device (see Tab le 7 ), leading to latch-up or permanent damage.
V
DD
GND
V
DDL
V
IA
V
IB
V
OB
V
DDB
GND GND
Figure 17. Recommended PCB Layout
V
ISO
GND GND V
DDA
V
OA
NC NC
ISO
A
ISO
07393-017
The ADuM6132 is a power device that dissipates approximately 1 W of power when fully loaded and running at maximum speed. Because it is not possible to apply a heat sink to an isolation device, the device depends primarily on heat dissipation into the PCB through the GND pins. If the device will be used at high ambient temperatures, provide a thermal path from the GND pins to the PCB ground plane.
The board layout in Figure 17 shows enlarged pads for Pin 8 (GND) and Pin 9 (GND
). Multiple vias should be implem-
ISO
ented from the pad to the ground plane. This layout significantly reduces the temperatures inside the chip. The dimensions of the expanded pads are left to the discretion of the designer and the available board space.

THERMAL ANALYSIS

The ADuM6132 consists of several internal die attached to two lead frame paddles. For the purposes of thermal analysis, the part is treated as a thermal unit with the highest junction temperature determining θ θ
is based on measurements taken with the part mounted on
JA
a JEDEC standard 4-layer board with fine width traces and still air. Under normal operating conditions, the ADuM6132 oper­ates at full load across the full temperature range without derating the output current. However, following the recommendations in the PCB Layout section decreases the thermal resistance to the PCB, allowing increased thermal margin at high ambient temperatures.
Under V
output short-circuit conditions, as shown in
ISO
Figure 9, the package power dissipation quickly exceeds the safe operating limit of 1.44 W for ambient temperatures up to 85°C. At low input voltage, the power dissipation can approach 2 W. Because internal compensation of the PWM makes low V worst-case condition, input voltage limiting is not an effective strategy for protecting the ADuM6132 from output load fault conditions. Therefore, the preferred protection methods, where required, are either limiting ambient temperature to 60°C or the use of a fuse.
, as shown in Tabl e 2. The value of
JA
DD
a

UNDERVOLTAGE LOCKOUT

The ADuM6132 has undervoltage lockout (UVLO) circuits on
, V
the V
DDL
DDA
, and V UVLO circuit monitors the supply voltage and takes a predeter­mined action based on whether the supply voltage is above or below a given threshold. These thresholds are specified in Tabl e 1.
In the recommended configuration shown in Figure 16, only two independent supplies are controlled by the user: V V
DDL/VDD
(V
= VDD in Figure 16). V
DDL
internal dc-to-dc converter via the V tion. Nevertheless, the V Tabl e 11 to show how the V dc-to-dc converter powers on and off.
Table 11. Undervoltage Lockout Functionality
User-Provided Supplies
V
V
DDL
V
DDB
H H H Normal operation.
H H L Internal dc-to-dc converter is
X L X Internal dc-to-dc converter is
L X X Internal dc-to-dc converter is
1
H: supply voltage > UVLO threshold; L: supply voltage < UVLO threshold;
X: supply voltage level is irrelevant.
When all three supplies are above their respective UVLO thresholds, the ADuM6132 operates normally. The internal dc-to-dc converter is active, and both outputs operate as determined by their respective input logic signals. If either of the user-provided supplies is below its UVLO threshold, the ADuM6132 is put into a disabled mode. In this mode, the internal dc-to-dc converter is turned off and both outputs are driven low.
The V
output is driven low by either the V
OB
UVLO circuit (whichever is below its threshold). The V output is driven low when the internal dc-to-dc converter is turned off. The V to drop also because V When V circuit drives V
is below its UVLO threshold, the V
DDA
OA
supplies. For each supply, the respective
DDB
is supplied by the
DDA
= V
ISO
UVLO functionality is included in
DDA
output behaves when the internal
OA
V
Powered
ISO
Supply
Effect
DDA
external connec-
DDA
1
Internal dc-to-dc converter is active.
output logic states
V
OA/VOB
match V
active but V
input logic states.
IA/VIB
is below UVLO
ISO
threshold.
output is driven low.
V
OA
output operates normally.
V
OB
DDL
= 0).
ISO
= 0).
ISO
or V
DDA
UVLO
turned off (V
output is driven low.
V
OA
output is driven low.
V
OB
turned off (V
output is driven low.
V
OA
output is driven low.
V
OB
supply voltage drops to 0 V, causing V
ISO
and V
ISO
are externally connected.
DDA
low.
DDB
DDB
OA
and
DDA
Rev. 0 | Page 12 of 16
Page 13
ADuM6132

PROPAGATION DELAY-RELATED PARAMETERS

Propagation delay is a parameter that describes the time it takes a logic signal to propagate through a component. The propaga­tion delay to a logic low output may differ from the propagation delay to a logic high output.
INPUT (VIx)
OUTPUT (V
t
PLH
)
Ox
t
PHL
Figure 18. Propagation Delay Parameters
50%
50%
Pulse width distortion is the maximum difference between these two propagation delay values and is an indication of how accurately the timing of the input signal is preserved.
Channel-to-channel matching refers to the maximum amount that the propagation delay differs between channels within a single ADuM6132 component.

MAGNETIC FIELD IMMUNITY

The ADuM6132 is extremely immune to external magnetic fields. The limitation on the ADuM6132 magnetic field immunity is set by the condition in which induced voltage in the receiving coil of the transformer is sufficiently large to falsely set or reset the decoder. The following analysis defines the conditions under which this may occur.
The pulses at the transformer output have an amplitude greater than 1.0 V. The decoder has a sensing threshold at approximately
0.5 V, thus establishing a 0.5 V margin in which induced voltages can be tolerated. The voltage induced across the receiving coil is given by
V = (−dβ/dt) Σπr
where:
β is the magnetic flux density (gauss).
is the radius of the nth turn in the receiving coil (cm).
r
n
N is the number of turns in the receiving coil.
Given the geometry of the receiving coil in the ADuM6132 and an imposed requirement that the induced voltage be at most 50% of the 0.5 V margin at the decoder, a maximum allowable magnetic flux density is calculated, as shown in Figure 19.
2
; n = 1, 2, … N
n
100
10
1
0.1
DENSITY (kgauss)
07393-018
0.01
MAXIMUM ALLOWABLE MAGNETIC FLUX
0.001 1k 10k 10M
MAGNETIC F IELD FREQ UENCY (Hz)
1M
100M100k
07393-019
Figure 19. Maximum Allowable External Magnetic Flux Density
For example, at a magnetic field frequency of 1 MHz, the maximum allowable magnetic flux density of 0.2 kgauss induces a voltage of 0.25 V at the receiving coil. This voltage is approximately 50% of the sensing threshold and does not cause a faulty output transition. Similarly, if such an event occurs during a transmitted pulse (with the worst-case polarity), the received pulse is reduced from >1.0 V to 0.75 V—still well above the 0.5 V sensing threshold of the decoder.
The preceding magnetic flux density values correspond to specific current magnitudes at given distances from the ADuM6132 transformers. Figure 20 expresses these allowable current magnitudes as a function of frequency for selected distances. As shown in Figure 20, the ADuM6132 is extremely immune and can be affected only by extremely large currents operated at high frequency and very close to the component. For example, at a magnetic field frequency of 1 MHz, a 0.5 kA current would need to be placed 5 mm away from the ADuM6132 to affect the operation of the component.
1000
DISTANCE = 1m
100
CURRENT (kA)
10
DISTANCE = 100mm
1
DISTANCE = 5mm
Rev. 0 | Page 13 of 16
0.1
MAXIMUM ALL OWABLE
0.01 1k 10k 100M100k 1M 10M
MAGNETIC F IELD FREQ UENCY (Hz)
Figure 20. Maximum Allowable Current for Various
Current-to-ADuM6132 Spacings
07393-020
Page 14
ADuM6132
Note that in the presence of strong magnetic fields and high frequencies, any loops formed by PCB traces may induce sufficiently large error voltages to trigger the threshold of succeeding circuitry. Care should be taken in the layout of such traces to avoid this possibility.

INSULATION LIFETIME

All insulation structures eventually break down when subjected to voltage stress over a sufficiently long period. The rate of insul­ation degradation depends on the characteristics of the voltage waveform applied across the insulation. In addition to the testing performed by the regulatory agencies, Analog Devices conducts an extensive set of evaluations to determine the lifetime of the insulation structure within the ADuM6132.
Analog Devices performs accelerated life testing using voltage levels higher than the rated continuous working voltage. Accel­eration factors for several operating conditions are determined. These factors allow calculation of the time to failure at the actual working voltage. Ta ble 1 2 summarizes the recommended peak working voltages for 50 years and 15 years of service life for various operating conditions evaluated by Analog Devices. In many cases, the approved working voltage is higher than the 50-year service life voltage. Operation at these high working voltages can lead to shortened insulation life in some cases.
The insulation lifetime of the ADuM6132 depends on the voltage waveform type imposed across the isolation barrier. The iCoupler insulation structure degrades at different rates depending on whether the waveform is bipolar ac, unipolar ac, or dc. Figure 21, Figure 22, and Figure 23 illustrate these different isolation voltage waveforms.
Bipolar ac voltage is the most stringent environment. The goal of a 50-year operating lifetime under the bipolar ac condition determines the maximum working voltage recommended by Analog Devices.
In the case of unipolar ac or dc voltage, the stress on the insulation is significantly lower, which allows operation at higher working voltages while still achieving a 50-year service life. The working voltages listed in Tab le 1 2 can be applied while maintaining the 50-year minimum lifetime, provided that the voltage conforms to either the unipolar ac or dc voltage cases.
Any cross-insulation voltage waveform that does not conform to Figure 22 or Figure 23 should be treated as a bipolar ac waveform, and its peak voltage should be limited to the 50-year lifetime voltage value listed in Ta b le 1 2 . Note that the voltage shown in Figure 22 is sinusoidal for illustration purposes only. It is meant to represent any voltage waveform varying between 0 V and some limiting value. The limiting value can be positive or negative, but the voltage cannot cross 0 V.
RATED PEAK VOLTAGE
0V
Figure 21. Bipolar AC Waveform
07393-021
RATED PEAK VOLTAGE
0V
Figure 22. Unipolar AC Waveform
07393-022
RATED PEAK VOLTAGE
0V
Figure 23. DC Waveform
07393-023
Table 12. Maximum Continuous Working Voltage1
Parameter Peak Voltage Lifetime
AC Voltage, Bipolar Waveform 424 V peak 50-year minimum lifetime AC Voltage, Unipolar Waveform
Basic Insulation 800 V peak 15-year minimum lifetime Basic Insulation 660 V peak 50-year minimum lifetime
DC Voltage Waveform
Basic Insulation 800 V peak 15-year minimum lifetime Basic Insulation 660 V peak 50-year minimum lifetime
1
Refers to continuous voltage magnitude imposed across the isolation barrier. See the Insulation Lifetime section for more details.
Rev. 0 | Page 14 of 16
Page 15
ADuM6132

OUTLINE DIMENSIONS

10.50 (0.4134)
10.10 (0.3976)

ORDERING GUIDE

Model
ADuM6132ARWZ ADuM6132ARWZ-RL
1
Z = RoHS Compliant Part.
1
1
2 0.2 15 −40°C to +85°C
BSC
9
7.60 (0.2992)
7.40 (0.2913)
8
10.65 (0.4193)
10.00 (0.3937)
2.65 (0.1043)
2.35 (0.0925)
SEATING PLANE
8° 0°
0.33 (0.0130)
0.20 (0.0079)
0 0
.
7
.
2
5
(
0
5
(
0
.
0
2
9
5
)
0
0
9
8
)
.
1.27 (0.0500)
0.40 (0.0157)
45°
032707-B
0.30 (0.0 118)
0.10 (0.0039)
COPLANARITY
0.10
16
1
1.27 (0.0500)
0.51 (0.0201)
0.31 (0.0122)
CONTROLL ING DIMENSIONS ARE IN MILLIM ETERS; INCH DI MENSIONS (IN PARENTHESES) ARE ROUNDED-O FF MIL LIMETE R EQUIVALENTS FOR REFERENCE ONLY AND ARE NOT APPROPRI ATE FOR USE IN DESIGN.
COMPLIANT TO JEDEC STANDARDS MS-013- AA
Figure 24. 16-Lead Standard Small Outline Package [SOIC_W]
Wide Body
(RW-16)
Dimensions shown in millimeters (inches)
No. of Channels
Output Peak Current (A)
Output Voltage (V) Temperature Range Package Description
Package Option
2 0.2 15 −40°C to +85°C 16-Lead SOIC_W RW-16
16-Lead SOIC_W, 13-inch Tape
RW-16
and Reel Option (1,000 Units)
Rev. 0 | Page 15 of 16
Page 16
ADuM6132
NOTES
©2008 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D07393-0-7/08(0)
Rev. 0 | Page 16 of 16
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