FEATURES
High Data Rate: DC to 100 Mbps (NRZ)
Compatible with 3.3 V and 5.0 V Operation/
Level Translation
125ⴗC Max Operating Temperature
Low Power Operation
5 V Operation
1.0 mA Max @ 1 Mbps
4.5 mA Max @ 25 Mbps
16.8 mA Max @ 100 Mbps
3.3 V Operation
0.4 mA Max @ 1 Mbps
3.5 mA Max @ 25 Mbps
7.1 mA Max @ 50 Mbps
8-Lead SOIC Package (lead-free version available)
High Common-Mode Transient Immunity: >25 kV/s
Safety and Regulatory Information
UL Recognized
2500 V rms for 1 Minute per UL 1577
CSA Component Acceptance Notice No. 5A
VDE Certificate of Conformity
DIN EN 60747-5-2 (VDE 0884 Part 2): 2003–01
DIN EN 60950 (VDE 0805): 2001–12; EN 60950: 2000
= 560 V
V
IORM
PEAK
APPLICATIONS
Digital Fieldbus Isolation
Opto-Isolator Replacement
Computer-Peripheral Interface
Microprocessor System Interface
General Instrumentation and Data Acquisition
Applications
FUNCTIONAL BLOCK DIAGRAM
GENERAL DESCRIPTION
The ADuM1100 is a digital isolator based on Analog Devices’
iCoupler technology. Combining high speed CMOS and monolithic air core transformer technology, this isolation component
provides outstanding performance characteristics superior to
alternatives such as optocoupler devices.
Configured as a pin compatible replacement for existing high speed
optocouplers, the ADuM1100 supports data rates as high as
25 Mbps and 100 Mbps.
The ADuM1100 operates with either voltage supply ranging from
3.0 V to 5.5 V, boasts a propagation delay of <18 ns and edge
asymmetry of <2 ns, and is compatible with temperatures up to
125°C. It operates at very low power, less than 0.9 mA of quiescent
current (sum of both sides), and a dynamic current of less than
160 µA per Mbps of data rate. Unlike other optocoupler alternatives, the ADuM1100 provides dc correctness with a patented
refresh feature that continuously updates the output signal.
The ADuM1100 is offered in three grades. The ADuM1100AR
and ADuM1100BR can operate up to a maximum temperature
of 105°C and support data rates up to 25 Mbps and 100 Mbps,
respectively. The ADuM1100UR can operate up to a maximum
temperature of 125°C and supports data rates up to 100 Mbps.
V
DD1
(DATA IN)
V
DD1
GND
V
I
1
FOR PRINCIPLES OF OPERATION, SEE METHOD OF OPERATION,
DC CORRECTNESS, AND MAGNETIC FIELD IMMUNITY SECTION.
UPDATE
E
N
C
O
D
E
ADuM1100
REV. E
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
(See TPC 2)ADuM1100BR/ADuM1100UR Only
Input CurrentI
Logic High Output VoltageV
Logic Low Output VoltageV
I
OH
OL
–10+0.01 +10µA0
V
– 0.1 5.0VIO = –20 µA, VI = V
DD2
V
– 0.8 4.6VIO = –4 mA, VI = V
DD2
0.00.1VIO = 20 µA, VI = V
0.030.1VIO = 400 µA, VI = V
0.30.8VIO = 4 mA, VI = V
SWITCHING SPECIFICATIONS
For ADuM1100AR
Minimum Pulse Width
Maximum Data Rate
For ADuM1100BR/ADuM1100UR
Minimum Pulse Width
Maximum Data Rate
3
4
3
4
PW40nsCL = 15 pF, CMOS Signal Levels
25MbpsCL = 15 pF, CMOS Signal Levels
PW6.710nsCL = 15 pF, CMOS Signal Levels
100150MbpsCL = 15 pF, CMOS Signal Levels
For All Grades
Propagation Delay Timet
to Logic Low Output
5, 6
PHL
10.518nsCL = 15 pF, CMOS Signal Levels
(See TPC 3)
Propagation Delay Timet
to Logic High Output
5, 6
PLH
10.518nsCL = 15 pF, CMOS Signal Levels
(See TPC 3)
Pulse Width Distortion |t
Change versus Temperature
Propagation Delay Skewt
(Equal Temperature)
Propagation Delay Skewt
(Equal Temperature, Supplies)
Output Rise/Fall TimetR, t
Common-Mode Transient Immunity|CM
at Logic Low/High Output
Input Dynamic PowerC
Dissipation Capacitance
Output Dynamic PowerC
Dissipation Capacitance
See Notes on page 5.
Specifications subject to change without notice.
6, 8
PLH
10
10
– t
|6PWD0.52nsCL = 15 pF, CMOS Signal Levels
PHL
7
PSK1
PSK2
6, 8
F
|,2535kV/µsV
9
L
|CMH|Transient Magnitude = 800 V
PD1
PD2
3ps/°CC
8nsC
6nsC
3nsC
35pF
8pF
≤ 5.5 V, 4.5 V ≤ V
DD1
≤ 5.5 V. All min/max
DD2
DD1
DD1
≤ VIN ≤ V
= 15 pF, CMOS Signal Levels
L
= 15 pF, CMOS Signal Levels
L
= 15 pF, CMOS Signal Levels
L
= 15 pF, CMOS Signal Levels
L
= 0 or V
I
DD1
IH
IH
IL
IL
IL
, VCM = 1000 V,
DD1
–2–
REV. E
Page 3
ADuM1100
ELECTRICAL SPECIFICATIONS, 3.3 V OPERATION
range, unless otherwise noted. All typical specifications are at TA = 25ⴗC, V
DD1
(3.0 V ≤ V
1
specifications apply over the entire recommended operation
= V
= 3.3 V.)
DD2
≤ 3.6 V, 3.0 V ≤ V
DD1
≤ 3.6 V. All min/max
DD2
ParameterSymbolMinTypMaxUnitTest Conditions
DC SPECIFICATIONS
Input Supply CurrentI
Output Supply CurrentI
Input Supply Current (25 Mbps)I
(See TPC 1)
Output Supply Current
2
(25 Mbps)I
DD1(Q)
DD2(Q)
DD1(25)
DD2(25)
0.10.3mAVI = 0 V or V
0.005 0.04mAVI = 0 V or V
DD1
DD1
2.02.8mA12.5 MHz Logic Signal Frequency
0.30.7mA12.5 MHz Logic Signal Frequency
(See TPC 2)
Input Supply Current (50 Mbps)I
(See TPC 1)ADuM1100BR/ADuM1100UR Only
Output Supply Current
2
(50 Mbps)I
DD1(50)
DD2(50)
4.06.0mA25 MHz Logic Signal Frequency,
1.21.6mA25 MHz Logic Signal Frequency,
(See TPC 2)ADuM1100BR/ADuM1100UR Only
Input CurrentI
Logic High Output VoltageV
Logic Low Output VoltageV
I
OH
OL
–10+0.01 +10µA0
V
– 0.1 3.3VIO = –20 µA, VI = V
DD2
V
– 0.5 3.0VIO = –2.5 mA, VI = V
DD2
0.00.1VIO = 20 µA, VI = V
0.040.1VIO = 400 µA, VI = V
0.30.4VIO = 2.5 mA, VI = V
≤ VIN ≤ V
DD1
IH
IH
IL
IL
IL
SWITCHING SPECIFICATIONS
For ADuM1100AR
Minimum Pulse Width
Maximum Data Rate
For ADuM1100BR/ADuM1100UR
Minimum Pulse Width
Maximum Data Rate
3
4
3
4
PW40nsCL= 15 pF, CMOS Signal Levels
25MbpsCL= 15 pF, CMOS Signal Levels
PW1020nsCL= 15 pF, CMOS Signal Levels
50100MbpsCL= 15 pF, CMOS Signal Levels
For All Grades
Propagation Delay Time tot
Logic Low Output
5, 6
PHL
14.528nsCL= 15 pF, CMOS Signal Levels
(See TPC 4)
Propagation Delay Time tot
Logic High Output
5, 6
PLH
15.028nsCL= 15 pF, CMOS Signal Levels
(See TPC 4)
– t
Pulse Width Distortion |t
PLH
Change versus Temperature
Propagation Delay Skewt
(Equal Temperature)
6, 8
Propagation Delay Skewt
(Equal Temperature, Supplies)
Output Rise/Fall TimetR, t
Common-Mode Transient Immunity|CM
at Logic Low/High Output
Input Dynamic Power DissipationC
Capacitance
Output Dynamic Power DissipationC
Capacitance
See Notes on page 5.
Specifications subject to change without notice.
10
10
|6PWD0.53nsCL= 15 pF, CMOS Signal Levels
PHL
7
PSK1
6, 8
9
PSK2
F
|,2535kV/µsVI=0 or V
L
|CMH|Transient Magnitude = 800 V
PD1
PD2
10ps/°CCL= 15 pF, CMOS Signal Levels
15nsCL= 15 pF, CMOS Signal Levels
12nsCL= 15 pF, CMOS Signal Levels
3nsC
= 15 pF, CMOS Signal Levels
L
, VCM= 1000 V,
DD1
47pF
14pF
REV. E
–3–
Page 4
ADuM1100
(5 V/3 V operation: 4.5 V ≤ V
= 5 V, V
1
≤ 5.5 V, 3.0 V ≤ V
= 3.3 V.)
DD2
= 15 pF, CMOS Signal Levels
L
= 15 pF, CMOS Signal Levels
L
= 15 pF, CMOS Signal Levels
L
= 15 pF, CMOS Signal Levels
L
= 15 pF, CMOS Signal Levels
L
DD2
ID
IL
IH
IL
IL
≤ 3.6 V.
≤ V
IH
IH
IL
IL
IH
IL
DD1
ELECTRICAL SPECIFICATIONS, MIXED 5 V/3 V or 3 V/5 V OPERATION
3 V/5 V operation: 3.0 V ≤ V
unless otherwise noted. All typical specifications are at TA = 25ⴗC, V
ParameterSymbolMinTypMaxUnitTest Conditions
DC SPECIFICATIONS
Input Supply Current, QuiescentI
5 V/3 V Operation0.30.8mA
3 V/5 V Operation0.10.3mA
Output Supply Current, QuiescentI
5 V/3 V Operation0.0050.04mA
3 V/5 V Operation0.010.06mA
Input Supply Current, 25 MbpsI
5 V/3 V Operation2.23.5mA12.5 MHz Logic Signal Frequency
3 V/5 V Operation2.02.8mA12.5 MHz Logic Signal Frequency
Output Supply Current, 25 MbpsI
5 V/3 V Operation0.30.7mA12.5 MHz Logic Signal Frequency
3 V/5 V Operation0.51.0mA12.5 MHz Logic Signal Frequency
Input Supply Current, 50 MbpsI
5 V/3 V Operation4.57.0mA25 MHz Logic Signal Frequency
3 V/5 V Operation4.06.0mA25 MHz Logic Signal Frequency
Output Supply Current, 50 MbpsI
5 V/3 V Operation1.21.6mA25 MHz Logic Signal Frequency
3 V/5 V Operation1.01.5mA25 MHz Logic Signal Frequency
Input CurrentsI
Logic High Output Voltage,V
5 V/3 V OperationV
Logic Low Output Voltage,V
5 V/3 V Operation0.040.1VIO = 400 µA, VI = V
Logic High Output Voltage,V
3 V/5 V OperationV
Logic Low Output Voltage,V
3 V/5 V Operation0.030.1VIO = 400 µA, VI = V
SWITCHING SPECIFICATIONS
For ADuM1100AR
Minimum Pulse Width
Maximum Data Rate
For ADuM1100BR/ADuM1100UR
Minimum Pulse Width
Maximum Data Rate
For All Grades
Propagation Delay Time to Logict
Low/High Output
5 V/3 V Operation (See TPC 5)1321nsCL = 15 pF, CMOS Signal Levels
3 V/5 V Operation (See TPC 6)1626nsC
Pulse Width Distortion, |t
5 V/3 V Operation0.52nsC
3 V/5 V Operation0.53nsC
Change versus Temperature
5 V/3 V Operation3ps/ºC C
3 V/5 V Operation10ps/ºC C
Propagation Delay Skewt
(Equal Temperature)
5 V/3 V Operation12nsCL = 15 pF, CMOS Signal Levels
3 V/5 V Operation15nsCL = 15 pF, CMOS Signal Levels
≤ 3.6 V, 4.5 V ≤ V
DD1
3
4
3
4
5, 6
PLH
6, 8
– t
PHL
≤ 5.5 V. All min/max specifications apply over the entire recommended operation range,
DD2
DDI(Q)
DDO(Q)
DDI(25)
DDO(25)
DDI(50)
DDO(50)
IA
OH
OL
= 3.3 V, V
DD1
–10+0.01+10µA0≤ VIA, VIB, VIC, V
V
– 0.1 3.3VIO = –20 µA, VI = V
DD2
– 0.5 3.0VIO = –2.5 mA, VI = V
DD2
= 5 V or V
DD2
DD1
0.00.1VIO = 20 µA, VI = V
0.30.4VIO = 2.5 mA, VI = V
V
OH
OL
– 0.1 5.0VIO = –20 µA, VI = V
DD2
– 0.8 4.6VIO = –4 mA, VI = V
DD2
0.00.1VIO = 20 µA, VI = V
0.30.8VIO = 4 mA, VI = V
PW40nsCL = 15 pF, CMOS Signal Levels
25Mbps CL = 15 pF, CMOS Signal Levels
PW20nsCL = 15 pF, CMOS Signal Levels
50Mbps CL = 15 pF, CMOS Signal Levels
PHL, tPLH
6
|
PWD
PSK1
DD1
or V
DD2
–4–
REV. E
Page 5
ADuM1100
ParameterSymbolMinTypMaxUnitTest Conditions
SWITCHING SPECIFICATIONS (continued)
Propagation Delay Skewt
(Equal Temperature, Supplies)
6, 8
5 V/3 V Operation9nsCL = 15 pF, CMOS Signal Levels
3 V/5 V Operation12nsC
Output Rise/Fall Time (10% to 90%)t
Common-Mode Transient Immunity at
Logic Low/High Output
8
Input Dynamic Power Dissipation Capacitance10C
5 V/3 V Operation35pF
3 V/5 V Operation47pF
Output Dynamic Power Dissipation Capacitance
5 V/3 V Operation8pF
3 V/5 V Operation14pF
NOTES
1
All voltages are relative to their respective ground.
2
Output supply current values are with no output load present. The supply current drawn at a given signal frequency when an output load is present is given by
I
= I
+ V
DD2(L)
3
The minimum pulse width is the shortest pulse width at which the specified pulse width distortion is guaranteed.
4
The maximum data rate is the fastest data rate at which the specified pulse width distortion is guaranteed.
5
t
the rising edge of the VI signal to the 50% level of the rising edge of the VO signal.
6
Since the input thresholds of the ADuM1100 are at voltages other than the 50% level of typical input signals, the measured propagation delay and pulse width distortion
DD2
is measured from the 50% level of the falling edge of the VI signal to the 50% level of the falling edge of the VO signal. t
PHL
× f × CL, where I
DD2
may be affected by slow input rise/fall times. See the Propagation Delay-Related Parameters section and Figures 3 to 7 for information on the impact of given input
rise/fall times on these parameters.
7
Pulse width distortion change versus temperature is the absolute value of the change in pulse width distortion for a 1°C change in operating temperature.
8
t
is the magnitude of the worst-case difference in t
PSK1
the recommended operating conditions. t
temperature, supply voltages, and output load within the recommended operating conditions.
9
CMH is the maximum common-mode voltage slew rate that can be sustained while maintaining VO > 0.8 V
rate that can be sustained while maintaining VO < 0.8 V. The common-mode voltage slew rates apply to both rising and falling edges. The transient magnitude is the
range over which the common-mode is slewed.
10
The dynamic power dissipation capacitance is given by
C
= (I
PDi
The supply current consumptions at a given frequency and output load are calculated as
I
= C
DD1
DDi(100)
× V
PD1
– I
DD1
DDi(Q)
×f + I
)/(V
×f), where i = 1 or 2 and f is the input signal frequency.
DDi
DD1(Q)
Specifications subject to change without notice.
is the unloaded output supply current, f is the input signal frequency, and CL is the output load capacitance.
DD2
and/or t
PHL
is the magnitude of the worst-case difference in t
PSK2
; I
= (C
DD2(L)
+ CL) × V
PD2
DD2
PSK2
= 15 pF, CMOS Signal Levels
, t
R
f
3nsC
|CML|,2535kV/µsVI = 0 or V
|Transient Magnitude = 800 V
|CM
H
PD1
10
C
PD2
that will be measured between units at the same operating temperature and output load within
×f + I
PLH
, where CL is the output load capacitance.
DD2(Q)
PHL
and/or t
that will be measured between units at the same operating
Device considered a 2-terminal device: Pins 1, 2, 3, and 4 shorted together and Pins 5, 6, 7, and 8 shorted together.
2
Input capacitance is measured at Pin 2 (VI).
REV. E
PD
–5–
240mW
Page 6
ADuM1100
REGULATORY INFORMATION
The ADuM1100 has been approved by the following organizations:
ULCSAVDE
Recognized under 1577Approved under CSA ComponentCertified according to
Component Recognition Program1Acceptance Notice No. 5A, C22.2 No. 1-98, DIN EN 60747-5-2 (VDE 0884 Part 2): 2003–1
C22.2 No. 14-95, and C22.2 No. 950-95DIN EN 60950 (VDE 0805): 2001–12; EN60950: 2000
File E214100File 205078File 2471900-4880-0002
NOTES
1
In accordance with UL 1577, each ADuM1100 is proof tested by applying an insulation test voltage ≥ 3000 V rms for 1 second (leakage detection current limit, I
2
In accordance with DIN EN 60747-5-2, each ADuM1100 is proof tested by applying an insulation test voltage ≥ 1050 V
limit ≤ 5 pC). A “*” mark branded on the component designates DIN EN 60747-5-2 approval.
for 1 second (partial discharge detection
PEAK
INSULATION AND SAFETY-RELATED SPECIFICATIONS
ParameterSymbol ValueUnitConditions
Minimum External Air Gap (Clearance)L(I01)4.90 minmmMeasured from input terminals to output terminals,
shortest distance through air
Minimum External Tracking (Creepage)L(I02)4.01 minmmMeasured from input terminals to output terminals,
shortest distance path along body
Minimum Internal Gap (Internal Clearance)0.016 min mmInsulation distance through insulation
Tracking Resistance (Comparative Tracking Index) CTI>175VDIN IEC 112/VDE 0303 Part 1
Isolation GroupIIIaMaterial Group (DIN VDE 0110, 1/89, Table 1)
≤ 5 µA).
I–O
2
DIN EN 60747-5-2 (VDE 0884 Part 2) INSULATION CHARACTERISTICS
DescriptionSymbolCharacteristicUnit
I
nstallation Classification per DIN VDE 0110
For Rated Mains Voltage ≤ 150 V rmsI to IV
For Rated Mains Voltage ≤ 300 V rmsI to III
For Rated Mains Voltage ≤ 400 V rmsI to II
Climatic Classification
ADuM1100AR and ADuM1100BR40/105/21
ADuM1100UR40/125/21
Pollution Degree (DIN VDE 0110, Table I)2
Maximum Working Insulation VoltageV
Highest Allowable Overvoltage (Transient Overvoltage, t
INI
= 60 sec)V
PR
TR
672V
4000V
PEAK
PEAK
Safety-Limiting Values (Maximum Value Allowed in the Event of a Failure,
See Thermal Derating Curve, Figure 1
Case TemperatureT
Input CurrentI
Output CurrentI
S
S, INPUT
S, OUTPUT
Insulation Resistance at TS, VIO = 500 VRs>10
This isolator is suitable for basic isolation only within the safety limit data. Maintenance of the safety data shall be ensured by means of protective circuits.
The * marking on the package denotes DIN EN 60747-5-2 approval for 560 V
working voltage.
PEAK
150°C
160mA
170mA
9
Ω
–6–
REV. E
Page 7
ADuM1100
180
160
140
120
100
INPUT CURRENT
80
60
40
SAFETY-LIMITING CURRENT (mA)
20
0
0
OUTPUT CURRENT
50100150200
CASE TEMPERATURE (ⴗC)
Figure 1. Thermal Derating Curve, Dependence of
Safety-Limiting Values with Case Temperature per
DIN EN 60747-5-2
ABSOLUTE MAXIMUM RATINGS
1
ParameterSymbolMin MaxUnit
Storage TemperatureT
Ambient OperatingT
Temperature
Supply Voltages
Input Voltage
Output Voltage
Average Current, per Pin
2
2
2
3
ST
A
V
DD1, VDD2
V
I
V
O
–55+150°C
–40+125°C
–0.5 +6.5V
–0.5 V
–0.5 V
DD1
DD2
+ 0.5 V
+ 0.5 V
Temperature ≤ 105°C–25+25mA
Temperature ≤ 125°C
Input Current–7+7mA
Output Current–20+20mA
Common-Mode Transients
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause permanent
damage to the device. This is a stress rating only. Functional operation of the device at
these or any other conditions above those listed in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions may affect
device reliability. Ambient temperature = 25°C, unless otherwise noted.
2
All voltages are relative to their respective ground.
3
See Figure 1 for information on maximum allowable current for various temperatures.
4
Refers to common-mode transients across the insulation barrier. Common-mode
transients exceeding the Absolute Maximum Rating may cause latch-up or permanent
damage.
4
–100 +100kV/µs
RECOMMENDED OPERATING CONDITIONS
ParameterSymbolMinMaxUnit
Operating Temperature
ADuM1100AR and ADuM1100BRT
ADuM1100URT
Supply Voltages
Logic High Input Voltage, 5 V Operation
Logic Low Input Voltage, 5 V Operation
Logic High Input Voltage, 3.3 V Operation
Logic Low Input Voltage, 3.3 V Operation
1
1, 2
(See TPCs 7 and 8)V
1, 2
(See TPCs 7 and 8)V
1, 2
(See TPCs 7 and 8)V
1, 2
(See TPCs 7 and 8)V
A
A
V
DD1, VDD2
IH
IL
IH
IL
–40+105°C
–40+125°C
3.05.5V
2.0V
DD1
V
0.00.8V
1.5V
DD1
V
0.00.5V
Input Signal Rise and Fall Times1.0ms
NOTES
1
All voltages are relative to their respective ground.
2
Input switching thresholds have 300 mV of hysteresis.
See the Method of Operation, DC Correctness, and Magnetic Field Immunity section and Figures 8 and 9 for information on immunity to external magnetic fields.
ADuM1100AR–40°C to +105°C25408-Lead SOICR-8
ADuM1100AR-RL7–40°C to +105°C25408-Lead SOIC, 1,000 Piece ReelR-8
ADuM1100ARZ*–40°C to +105°C25408-Lead SOICR-8
ADuM1100ARZ-RL7*–40°C to +105°C25408-Lead SOIC, 1,000 Piece ReelR-8
ADuM1100BR–40°C to +105°C100108-Lead SOICR-8
ADuM1100BR-RL7–40°C to +105°C100108-Lead SOIC, 1,000 Piece ReelR-8
ADuM1100BRZ*–40°C to +105°C100108-Lead SOICR-8
ADuM1100BRZ-RL7*–40°C to +105°C100108-Lead SOIC, 1,000 Piece ReelR-8
ADuM1100UR–40°C to +125°C100108-Lead SOICR-8
ADuM1100UR-RL7–40°C to +125°C100108-Lead SOIC, 1,000 Piece ReelR-8
ADuM1100URZ*–40°C to +125°C100108-Lead SOICR-8
ADuM1100URZ-RL7*–40°C to +125°C100108-Lead SOIC, 1,000 Piece ReelR-8
ADuM1100EVALEvaluation Board
*Z = Lead Free
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the ADuM1100 features proprietary ESD protection circuitry, permanent damage may occur on
devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are
recommended to avoid performance degradation or loss of functionality.
–8–
REV. E
Page 9
TEMPERATURE (ⴗC)
18
–50–25125
PROPAGATION DELAY (ns)
16
14
13
12
0255075100
t
PHL
t
PLH
17
15
Typical Performance Characteristics—
ADuM1100
20
18
16
14
12
10
8
CURRENT (mA)
6
4
2
0
0
255075100125150
5V
3.3V
DATA RATE (Mbps)
TPC 1. Typical Input Supply Current vs. Logic
Signal Frequency for 5 V and 3.3 V Operation
5
4
3
5V
2
CURRENT (mA)
1
3.3V
18
17
16
t
PHL
15
14
PROPAGATION DELAY (ns)
13
12
–50
–252550100125
075
TEMPERATURE (ⴗC)
t
PLH
TPC 4. Typical Propagation Delays vs. Temperature,
3.3 V Operation
14
13
t
PLH
12
t
PHL
11
PROPAGATION DELAY (ns)
10
0
0
255075100125150
DATA RATE (Mbps)
TPC 2. Typical Output Supply Current vs. Logic
Signal Frequency for 5 V and 3.3 V Operation
13
12
11
t
PHL
PROPAGATION DELAY (ns)
10
9
–50
TPC 3. Typical Propagation Delays vs. Temperature,
5 V Operation
05075100125
–2525
TEMPERATURE (ⴗC)
t
PLH
9
–252550100125
–50
075
TEMPERATURE (ⴗC)
TPC 5. Typical Propagation Delays vs. Temperature,
5 V/3 V Operation
TPC 6. Typical Propagation Delays vs. Temperature,
3 V/5 V Operation
REV. E
–9–
Page 10
ADuM1100
1.7
1.6
(V)
INPUT THRESHOLD, V
ITH
1.5
1.4
1.3
1.2
1.1
3.0
–40ⴗC
+25ⴗC
+125ⴗC
3.54.04.55.05.5
INPUT SUPPLY VOLTAGE, V
DD1
(V)
TPC 7. Typical Input Voltage Switching Threshold,
Low-to-High Transition
APPLICATION INFORMATION
PC Board Layout
The ADuM1100 digital isolator requires no external interface
circuitry for the logic interfaces. A bypass capacitor is recommended at the input and output supply pins. The input bypass
capacitor may most conveniently be connected between Pins 3
and 4 (Figure 2). Alternatively, the bypass capacitor may be located
between Pins 1 and 4. The output bypass capacitor may be connected between Pins 7 and 8 or Pins 5 and 8. The capacitor value
should be between 0.01 µF and 0.1 µF. The total lead length
between both ends of the capacitor and the power supply pins
should not exceed 20 mm.
Propagation delay time describes the length of time it takes for a
logic signal to propagate through a component. Propagation delay
(V)
ITH
INPUT THRESHOLD, V
1.4
1.3
1.2
1.1
1.0
0.9
0.8
3.0
3.54.04.55.05.5
INPUT SUPPLY VOLTAGE, V
–40ⴗC
+25ⴗC
DD1
+125ⴗC
(V)
TPC 8. Typical Input Voltage Switching Threshold,
High-to-Low Transition
time to logic low output and propagation delay time to logic high
output refer to the duration between an input signal transition and
the respective output signal transition (Figure 3).
Pulse width distortion is the maximum difference between t
t
and provides an indication of how accurately the input signal’s
PHL
PLH
and
timing is preserved in the component’s output signal. Propagation
delay skew is the difference between the minimum and maximum
propagation delay values among multiple ADuM1100 components operated at the same operating temperature and having
the same output load.
Depending on the input signal rise/fall time, the measured propagation delay based on the input 50% level can vary from the true
propagation delay of the component (as measured from its input
switching threshold). This is due to the fact that the input threshold,
as is the case with commonly used optocouplers, is at a different
voltage level than the 50% point of typical input signals. This
propagation delay difference is given by
∆
tt tVVV
=−=
'/..
LHPLHPLHrI
=−=
∆
tt tVVV
'/..
HLPHLPHLfI
0805
()
0805
()
−
1
()
1
()
−
ITH L H
ITH H L
−
()
−
()
where:
t
PLH
, t
PHL
= propagation delays as measured from the
input 50% level.
, t ′
t′
PLH
PHL
= propagation delays as measured from the
input switching thresholds.
, t
t
r
f
V
I
= input 10% to 90% rise/fall time.
=amplitude of input signal (0 to VI levels
assumed).
V
ITH(L–H)
, V
= input switching thresholds.
ITH(H–L)
INPUT (VI)
V
ITH(L–H)
⌬
LH
V
I
OUTPUT (VO)
⌬
HL
50%
t
PLH
t'
PLH
50%
V
ITH(H–L)
t'
t
PHL
PHL
Figure 4. Impact of Input Rise/Fall Time on Propagation Delay
–10–
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Page 11
(ns)
INPUT RISE/FALL TIME (10%–90%, ns)
6
1
PULSEWIDTH DISTORTION ADJUSTMENT,
⌬
PWD
(ns)
3
0
36810
5
1
5V INPUT SIGNAL
24579
3.3V INPUT SIGNAL
2
4
LH
PROPAGATION DELAY CHANGE, ⌬
4
3
5V INPUT SIGNAL
2
1
3.3V INPUT SIGNAL
0
1
24579
36810
INPUT RISE TIME (10%–90%, ns)
ADuM1100
Figure 5. Typical Propagation Delay Change due to
Input Rise Time Variation (for V
0
= 3.3 V and 5 V)
DD1
Figure 7. Typical Pulse Width Distortion Adjustment due
to Input Rise/Fall Time Variation (at V
= 3.3 V and 5 V)
DD1
Method of Operation, DC Correctness, and
Magnetic Field Immunity
(ns)
HL
–1
5V INPUT SIGNAL
Referring to the functional block diagram, the two coils act as a
pulse transformer. Positive and negative logic transitions at the
isolator input cause narrow (2 ns) pulses to be sent via the transformer to the decoder. The decoder is bistable and therefore
–2
3.3V INPUT SIGNAL
either set or reset by the pulses indicating input logic transitions.
In the absence of logic transitions at the input for more than 2 µs,
a periodic update pulse of the appropriate polarity is sent to ensure
dc correctness at the output. If the decoder receives none of
–3
PROPAGATION DELAY CHANGE, ⌬
–4
1
36810
24579
INPUT RISE TIME (10%–90%, ns)
Figure 6. Typical Propagation Delay Change due to
Input Fall Time Variation (for V
= 3.3 V and 5 V)
DD1
The impact of the slower input edge rates can also affect the
measured pulse width distortion as based on the input 50% level.
This impact may either increase or decrease the apparent pulse
width distortion depending on the relative magnitudes of t
, and PWD. The case of interest here is the condition
t
PLH
PHL
that leads to the largest increase in pulse width distortion. The
change in this case is given by
∆∆∆
()
PWDPWD
=′ ==
PWDLHHL
08
tVVV Vfor ttt
/.––,
1
––
==
()
––
ITH L HITH H L
()()
()
rf
where:
PWDtt
=
PLHPHL
This adjustment in pulse width distortion is plotted as a function of input rise/fall time in Figure 7.
PWDtt
′= ′′––
PLHPHL
these update pulses for more than about 5 µs, the input side is
assumed to be unpowered or nonfunctional, in which case the
isolator output is forced to a logic high state by the watchdog
timer circuit.
The limitation on the ADuM1100’s magnetic field immunity is set
by the condition in which induced voltage in the transformer’s
receiving coil is sufficiently large to either falsely set or reset the
decoder. The analysis that follows defines the conditions under
which this may occur. The ADuM1100’s 3.3 V operating condition is examined because it represents the most susceptible mode
of operation.
,
The pulses at the transformer output are greater than 1.0 V in
amplitude. The decoder has sensing thresholds at about 0.5 V,
therefore establishing a 0.5 V margin in which induced voltages can
be tolerated. The induced voltage induced across the receiving
coil is given by
VddtrnN
=
βπ
()
2
Σ
=–/;,,....,
n
12
where:
β = magnetic flux density (Gauss).
N = number of turns in receiving coil.
r
= radius of nth turn in receiving coil (cm).
n
REV. E
–11–
Page 12
ADuM1100
Given the geometry of the receiving coil in the ADuM1100 and an
imposed requirement that the induced voltage be at most 50% of
the 0.5 V margin at the decoder, a maximum allowable magnetic
field is calculated as shown in Figure 8.
100
10
1
0.1
DENSITY (KGauss)
0.01
MAXIMUM ALLOWABLE MAGNETIC FLUX
0.001
1k10k10M
MAGNETIC FIELD FREQUENCY (Hz)
1M
100M100k
Figure 8. Maximum Allowable External Magnetic Field
For example, at a magnetic field frequency of 1 MHz, the maximum
allowable magnetic field of 0.2 KGauss induces a voltage of
0.25 V at the receiving coil. This is about 50% of the sensing
threshold and will not cause a faulty output transition. Similarly,
if such an event were to occur during a transmitted pulse (and was
of the worst-case polarity), it would reduce the received pulse
from >1.0 V to 0.75 V—still well above the 0.5 V sensing
threshold of the decoder.
The preceding magnetic flux density values correspond to specific
current magnitudes at given distances away from the ADuM1100
transformers. Figure 9 expresses these allowable current magnitudes
as a function of frequency for selected distances. As can be seen,
the ADuM1100 is extremely immune and can be affected only
by extremely large currents operated at high frequency and very
close to the component. For the 1 MHz example noted, one
would have to place a current of 0.5 kA 5 mm away from the
ADuM1100 to affect the component’s operation.
1000
DISTANCE = 1m
100
10
DISTANCE = 100mm
1
DISTANCE = 5mm
0.1
MAXIMUM ALLOWABLE CURRENT (kA)
0.01
1k10k 100M100k1M10M
MAGNETIC FIELD FREQUENCY (Hz)
Figure 9. Maximum Allowable Current for
Various Current-to-ADuM1100 Spacings
Note that at combinations of strong magnetic field and high
frequency, any loops formed by printed circuit board traces could
induce sufficiently large error voltages to trigger the thresholds
of succeeding circuitry. Care should be taken in the layout of
such traces to avoid this possibility.
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OUTLINE DIMENSIONS
8-Lead Standard Small Outline Package [SOIC]
Narrow Body
(R-8)
Dimensions shown in millimeters and (inches)
5.00 (0.1968)
4.80 (0.1890)
4.00 (0.1574)
3.80 (0.1497)
85
6.20 (0.2440)
5.80 (0.2284)
41
ADuM1100
1.27 (0.0500)
0.25 (0.0098)
0.10 (0.0040)
COPLANARITY
0.10
CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS
(IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR
REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN