Datasheet ADR510 Datasheet (ANALOG DEVICES)

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1.0 V Precision Low Noise
V
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FEATURES

Precision 1.000 V voltage reference Ultracompact 3 mm × 3 mm SOT-23 package No external capacitor required Low output noise: 4 V p-p (0.1 Hz to 10 Hz) Initial accuracy: ±0.35% maximum Temperature coefficient: 70 ppm/°C maximum Operating current range: 100 µA to 10 mA Output impedance: 0.3 Ω maximum Temperature range: −40°C to +85°C

APPLICATIONS

Precision data acquisition systems Battery-powered equipment
Cellular phone Notebook computer PDA
GPS 3 V/5 V, 8-/12-bit data converters Portable medical instruments Industrial process control systems Precision instruments
Shunt Voltage Reference
ADR510

PIN CONFIGURATION

ADR510
V+
1
3
TRIM/NC
2
V–
TOP VIEW
(Not to Scale)
NC = NO CONNECT
Figure 1. 3-Lead SOT-23-3
03270-001

GENERAL DESCRIPTION

Designed for space critical applications, the ADR510 is a low voltage (1.000 V), precision shunt-mode voltage reference in an ultracompact (3 mm × 3 mm) SOT-23-3 package. The ADR510 features low temperature drift (70 ppm/°C), high accuracy (±0.35%), and ultralow noise (4 μV p-p) performance.
The ADR510 advanced design eliminates the need for an external
pacitor, yet it is stable with any capacitive load. The minimum
ca operating current increases from 100 μA to a maximum of 10 mA. This low operating current and ease of use make the ADR510 ideally suited for handheld battery-powered applications.
A TRIM terminal is available on the ADR510 to provide
djustment of the output voltage over ±0.5% without affecting
a the temperature coefficient of the device. This feature provides users with the flexibility to trim out any system errors.
S
IL + I
ADR510
R
Q
BIAS
I
L
V
OUT
I
Figure 2. Typical Operating Circuit
C
Q
OUT
(OPTIONAL)
R
BIAS
= 1.0V
VS – V
=
IL + I
OUT
Q
3270-002
Table 1. ADR510
Part
Output Vo
ltag e, V
Initial Accuracy
OUT
Temperature Coefficient
ADR510A 1.000 V 3.5 mV 0.35% 70 ppm/°C
Rev. B
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 www.analog.com Fax: 781.461.3113 ©2003–2007 Analog Devices, Inc. All rights reserved.
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TABLE OF CONTENTS

Features.............................................................................................. 1
Applications....................................................................................... 1
Pin Configuration............................................................................. 1
General Description ......................................................................... 1
Revision History ............................................................................... 2
Specifications..................................................................................... 3
Electrical Characteristics ............................................................. 3
Absolute Maximum Ratings............................................................ 4
Thermal Resistance ...................................................................... 4
ESD Caution.................................................................................. 4
Typical Performance Characteristics ............................................. 5

REVISION HISTORY

9/07—Rev. A to Rev. B
Changes to Adjustable Precision Voltage Source Section ........... 8
Changes to Figure 11........................................................................ 8
Changes to Figure 12........................................................................ 8
4/07—Rev. 0 to Rev. A
Changes to Table 1............................................................................ 1
C
hanges to Table 3 and Table 4....................................................... 4
Changes to Figure 4, Figure 5, Figure 6, and Figure 7................. 5
Changes to Thermal Hysteresis Section ........................................ 7
Changes to Figure 11........................................................................ 8
Changes to Figure 14 and Equation 5............................................ 9
Changes to Ordering Guide.......................................................... 10
8/03—Revision 0: Initial Version
Parameter Definitions.......................................................................7
Temperature Coefficient...............................................................7
Thermal Hysteresis .......................................................................7
Applications Information.................................................................8
Adjustable Precision Voltage Source...........................................8
Output Voltage Trim.....................................................................8
Using the ADR510 with Precision Data Converters ................8
Precise Negative Voltage Reference ............................................9
Outline Dimensions....................................................................... 10
Ordering Guide .......................................................................... 10
Rev. B | Page 2 of 12
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SPECIFICATIONS

ELECTRICAL CHARACTERISTICS

IIN = 100 μA to 10 mA @ TA = 25°C, unless otherwise noted.
Table 2.
Parameter Symbol Conditions Min Typ Max Unit
Output Voltage1 V Initial Accuracy V V Temperature Coefficient, A Grade TCV
−40°C < TA < +85°C 85 ppm/°C Output Voltage Change vs. IIN ∆VR IIN = 0.1 mA to 10 mA 3 mV Dynamic Output Impedance (∆VR/∆IR) IIN = 1 mA ± 100 μA 0.3 Ω Minimum Operating Current IIN 0°C < TA < 70°C 100 μA Voltage Noise eN p-p f = 0.1 Hz to 10 Hz 4 μV p-p Turn-On Settling Time2 tR To within 0.1% of output 10 μs Output Voltage Hysteresis V
1
The forward diode voltage characteristic at −1 mA is typically 0.65 V.
2
Measured without a load capacitor.
0.9965 1.0 1.0035 V
OUT
−3.5 +3.5 mV
OUTERR
−0.35 +0.35 %
OUTERR%
0°C < TA < 70°C 70 ppm/°C
OUT
50 ppm
OUT_HYS
Rev. B | Page 3 of 12
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ABSOLUTE MAXIMUM RATINGS

Table 3.
Parameter Rating
Reverse Current 25 mA Forward Current 20 mA Storage Temperature Range −65°C to +150°C Operating Temperature Range −40°C to +85°C Junction Temperature Range −65°C to +150°C Lead Temperature (Soldering, 60 sec) 300°C

THERMAL RESISTANCE

θJA is specified for the worst-case conditions, that is, a device soldered in a circuit board for surface-mount packages. Package power dissipation = (T
Table 4. Thermal Resistance
Package Type θJA θ
3-Lead SOT-23-3 (RT-3) 230 146 °C/W
− TA)/θJA.
JMAX
Unit
JC
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

ESD CAUTION

Rev. B | Page 4 of 12
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TYPICAL PERFORMANCE CHARACTERISTICS

1.002
1.001
VIN = 5V/DIV
1.000
(V)
OUT
V
0.999
= 500mV/DIV
V
0.998
OUT
0.997 07
Figure 3. Typical V
TEMPERATURE (° C)
vs. Temperature
OUT
TIME (400n s/DIV)
VIN = 5V/DIV
V
= 500mV/DIV
OUT
Figure 4. Turn-On Time
VIN = 5V/DIV
605040302010
0
03270-003
3270-004
Figure 7. Turn-Off Time with 1 μF Input Capacitor
TIME (400n s/DIV)
Figure 6. Turn-Off Time
VIN = 5V/DIV
= 500mV/DIV
V
OUT
TIME (1ms/DIV)
ΔIIN = 100µA
3270-006
3270-007
V
= 500mV/DIV
OUT
TIME (400µ s/DIV)
3270-005
Figure 5. Turn-On Time with 1 μF Input Capacitor
Rev. B | Page 5 of 12
= 50mV/DIV
V
OUT
TIME (2µs/DIV)
Figure 8. Output Response to 100 μA Input Current Change
3270-008
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ΔIIN = 100µA
2µV/DIV
= 50mV/DIV
V
OUT
TIME (2µs/DIV)
Figure 9. Output Response to 100 μA Input Current Change
with
1 μF Capacitor
3270-009
TIME (400ms/ DIV)
Figure 10. 1 Hz to 10 Hz Noise
3270-010
Rev. B | Page 6 of 12
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ADR510
=
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PARAMETER DEFINITIONS

TEMPERATURE COEFFICIENT

This is the change of output voltage with respect to the operating temperature changes, normalized by the output voltage at 25°C. This parameter is expressed in parts per million/degrees Celsius (ppm/°C) and can be determined with the following equation:
C][ppm/ ×
TCV
OUT
=°
OUT
where:
V
(25°C) is the output voltage at 25°C.
OUT
) is the output voltage at Temperature 1.
V
OUT(T1
V
) is the output voltage at Temperature 2.
OUT(T2
)()(
T1VT2V
OUTOUT
×°
T1T2C25V
)()(
6
(1)
10

THERMAL HYSTERESIS

Thermal hysteresis is the change of output voltage after the device is cycled through the temperature from 25°C to 0°C to 85°C and back to 25°C.
VC25VV
)( °
[ppm] ×
V
_
HYSOUT
=
OUT
where:
V
(25°C) is the output voltage at 25°C.
OUT
is the output voltage at 25°C after temperature cycle at
V
OUT_TC
+25°C to −40°C to +85°C and back to +25°C.
TCOUTOUTHYSOUT
__
)(
°
VC25V
_
TCOUTOUT
6
10
)(
°
C25V
(2)
Rev. B | Page 7 of 12
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A
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APPLICATIONS INFORMATION

The ADR510 is a 1.0 V precision shunt voltage reference designed to operate without an external output capacitor between the positive terminal and the negative terminal for stability. An external capacitor can be used for additional filtering of the supply.
As with all shunt voltage references, an external bias resistor
) is required between the supply voltage and the ADR510
(R
BIAS
(see
Figure 2). R through the load (I supply voltage can vary, thus R
sets the current that is required to pass
BIAS
) and the ADR510 (IQ). The load and the
L
is chosen based on the
BIAS
following conditions:
R
must be small enough to supply the minimum IQ
BIAS
current to the ADR510 even when the supply voltage is at
minimum value and the load current is at maximum value.
R
also needs to be large enough so that IQ does not
BIAS
exceed 10 mA when the supply voltage is at its maximum
value and the load current is at its minimum value.
Given these conditions, R voltage (V
), the load and operating current (IL and IQ) of the
S
is determined by the supply
BIAS
ADR510, and the ADR510 output voltage.
VV
S
R
=
BIAS
OUT
II
+
L
Q
(3)

ADJUSTABLE PRECISION VOLTAGE SOURCE

The ADR510, combined with a precision low input bias op amp such as the AD860x, can be used to output a precise adjustable voltage. Figure 11 illustrates implementation of this application usin
g the ADR510.
Output of the op amp, V the circuit, which is completely dependent on the R2 and R1 resistors.
R2
V
OUT
+= 1
R1
An additional capacitor in parallel with R2 can be added to
ilter out high frequency noise. The value of C2 is dependent on
f the value of R2.
CC
, is determined by the gain of
OUT
(4)

OUTPUT VOLTAGE TRIM

Using a mechanical or digital potentiometer, the output voltage of the ADR510 can be trimmed ±0.5%. The circuit in Figure 12
llustrates how the output voltage can be trimmed using a
i 10 kΩ potentiometer. Note that trimming using other resistor values may not produce an accurate output from the ADR510.
CC
R
BIAS
V
OUT
03270-012
ADR510
1
3
R1
470k
2
Figure 12. Output Voltage Trim
POT 10k

USING THE ADR510 WITH PRECISION DATA CONVERTERS

The compact ADR510 and its low minimum operating current requirement make it ideal for use in battery-powered portable instruments, such as the AD7533 CMOS multiplying DAC, that us
e precision data converters.
Figure 13 shows the ADR510 serving as an external reference to th
e
AD7533, a CMOS multiplying DAC. Such a DAC requires a
gative voltage input in order to provide a positive output
ne range. In this application, the ADR510 is supplying a −1.0 V reference to the REF input of the
MSB
V
DD
G
N
0
1
1
32 1 15
ADR510
Figure 13. ADR510 as a Reference for a 10-Bit CMOS DAC (AD7533)
+
R2
–V
DD
AD7533.
9
AD7533
LSB
+ V
OUT
= 0V TO 1.0V
3270-013
R
BIAS
1.0V
V
AD860x
DR510
R1
Figure 11. Adjustable Precision Voltage Source
R2
C2
(OPTIO NAL)
= (1 + R2/R1)
OUT
03270-011
Rev. B | Page 8 of 12
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PRECISE NEGATIVE VOLTAGE REFERENCE

The ADR510 is suitable for use in applications where a precise
negative voltage reference is desired, including the application
detailed in Figure 13.
Figure 14 shows the ADR510 configured to provide an output
f −1.0 V.
o
ADR510
Figure 14. Precise −1.0 V Reference Configuration
+
–1.0V
I
R1
–V
DD
03270-014
Because the ADR510 characteristics resemble those of a Zener diode, the cathode shown in
espect to the anode (V+ with respect to V− on the ADR510
r
Figure 14 is 1.0 V higher with
package). Because the cathode of the ADR510 is tied to ground, the anode must be −1.0 V.
R1 in Figure 14 should be chosen so that 100 μA to 10 mA is p
rovided to properly bias the ADR510.
V
)(1
R1
=
DD
(5)
The R1 resistor should be chosen so that power dissipation is at
nimum. An ideal resistor value can be determined through
a mi manipulation of Equation 5.
Rev. B | Page 9 of 12
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OUTLINE DIMENSIONS

3.04
2.90
1.40
1.30
1.20
PIN 1
0.10
0.01
Figure 15. 3-Lead Small Outline Transistor Package [SOT-23-3]
2.80
3
1
1.90 BSC
SEATING PLANE
COMPLIANT TO JEDEC STANDARDS TO-236-AB
2
0.95 BSC
2.64
2.10
0.50
0.30
1.12
0.89
0.60
0.50
0.40
(RT-3)
Dimensions shown in millimeters
0.20
0.08

ORDERING GUIDE

Output
Model
(V
OUT
Initial Accuracy
)
ADR510ART-REEL7 1.0 V 3.5 mV 0.35% 70 ppm/°C −40°C to +85°C 3-Lead SOT-23-3 RT-3 3,000 RAA ADR510ART-R2 1.0 V 3.5 mV 0.35% 70 ppm/°C −40°C to +85°C 3-Lead SOT-23-3 RT-3 250 RAA ADR510ARTZ-REEL71 1.0 V 3.5 mV 0.35% 70 ppm/°C −40°C to +85°C 3-Lead SOT-23-3 RT-3 3,000 RAA# ADR510ARTZ-R21 1.0 V 3.5 mV 0.35% 70 ppm/°C −40°C to +85°C 3-Lead SOT-23-3 RT-3 250 RAA#
1
Z = RoHS Compliant Part. # denotes lead free, may be top or bottom marked.
Voltage
Temperature Coefficient
Temperature Range
Package Description
Package Option
Ordering Quantity
Branding
Rev. B | Page 10 of 12
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NOTES
Rev. B | Page 11 of 12
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NOTES
©2003–2007 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D03270-0-9/07(B)
Rev. B | Page 12 of 12
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