Ultracompact SC70 and SOT-23 packages
Low temperature coefficient: 75 ppm/°C (maximum)
Pin compatible with LM4040/LM4050
Initial accuracy: ±0.1%
No external capacitor required
Wide operating current range: 50 μA to 15 mA
Extended temperature range: −40°C to +125°C
APPLICATIONS
Portable, battery-powered equipment
Automotives
Power supplies
Data acquisition systems
Instrumentation and process control
Energy management
GENERAL DESCRIPTION
Designed for space-critical applications, the ADR5040/
ADR5041/ADR5043/ADR5044/ADR5045 are high precision
shunt voltage references, housed in ultrasmall SC70 and SOT-23
packages. These voltage references are multipurpose, easy-to-use
references that can be used in a vast array of applications. They
feature low temperature drift, an initial accuracy of better than
0.1%, and fast settling time.
Available in output voltages of 2.048 V, 2.5 V, 3.0 V, 4.096 V, and
, the advanced design of the ADR5040/ADR5041/ADR5043/
5.0 V
ADR5044/ADR5045 eliminates the need for compensation by an
external capacitor, yet the references are stable with any capacitive
load. The minimum operating current increases from 50 μA to
a maximum of 15 mA. This low operating current and ease of use
make these references ideally suited for handheld, battery-powered
applications. This family of references has been characterized
over the extended temperature range of −40°C to +125°C.
Voltage References
PIN CONFIGURATION
DR5040/ADR5041/
ADR5043/ADR5044/
ADR5045
V+ 1
NC3
2
V–
NOTES
1. NC = NO CONNECT .
2. PIN 3 MUST BE LEFT FLOATING OR
CONNECTED TO GROUND.
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
IIN = 50 μA to 15 mA, TA = 25°C, unless otherwise noted.
Table 2.
Parameter Symbol Conditions Min Typ Max Unit
OUTPUT VOLTAGE V
OUT
Grade A 2.044 2.048 2.052 V
Grade B 2.046 2.048 2.050 V
INITIAL ACCURACY V
IIN = 100 μA
OERR
Grade A –4.096 +4.096 mV
±0.2 %
Grade B –2.048 +2.048 mV
±0.1 %
TEMPERATURE COEFFICIENT1 TCV
–40°C < TA < +125°C
OUT
Grade A 10 100 ppm/°C
Grade B 10 75 ppm/°C
OUTPUT VOLTAGE CHANGE vs. IIN ∆VR I
–40°C < TA < +125°C 0.4 1.75 mV
I
–40°C < TA < +125°C 4 8 mV
DYNAMIC OUTPUT IMPEDANCE (∆VR/∆IR) IIN = 50 μA to 15 mA 0.2 Ω
MINIMUM OPERATING CURRENT I
T
IN
–40°C < TA < +125°C 60 μA
VOLTAGE NOISE eN I
I
TURN-ON SETTLING TIME tR C
OUTPUT VOLTAGE HYSTERESIS ∆V
1
Guaranteed by design.
IIN = 1 mA 40 ppm
OUT_HYS
IIN = 100 μA
= 50 μA to 1 mA
IN
= 1 mA to 15 mA
IN
= 25°C 50 μA
A
= 100 μA; 0.1 Hz to 10 Hz 2.8 μV rms
IN
= 100 μA; 10 Hz to 10 kHz 120 μV rms
IN
= 0 μF 28 μs
LOAD
ADR5041 ELECTRICAL CHARACTERISTICS
IIN = 50 μA to 15 mA, TA = 25°C, unless otherwise noted.
Table 3.
Parameter Symbol Conditions Min Typ Max Unit
OUTPUT VOLTAGE V
Grade A 2.495 2.500 2.505 V
Grade B 2.4975 2.500 2.5025 V
INITIAL ACCURACY V
Grade A –5 +5 mV
±0.2 %
Grade B –2.5 +2.5 mV
±0.1 %
TEMPERATURE COEFFICIENT
1
Grade A 10 100 ppm/°C
Grade B 10 75 ppm/°C
OUTPUT VOLTAGE CHANGE vs. IIN ∆VR I
–40°C < TA < +125°C 0.5 1.8 mV
I
–40°C < TA < +125°C 4 8 mV
I
OUT
IIN = 100 μA
OERR
TCV
–40°C < TA < +125°C
OUT
= 100 μA
IN
= 50 μA to 1 mA
IN
= 1 mA to 15 mA
IN
Rev. A | Page 3 of 16
Page 4
ADR5040/ADR5041/ADR5043/ADR5044/ADR5045
www.BDTIC.com/ADI
Parameter Symbol Conditions Min Typ Max Unit
DYNAMIC OUTPUT IMPEDANCE (∆VR/∆IR) IIN = 50 μA to 15 mA 0.2 Ω
MINIMUM OPERATING CURRENT IIN TA = 25°C 50 μA
–40°C < TA < +125°C 60 μA
VOLTAGE NOISE eN I
I
TURN-ON SETTLING TIME tR C
OUTPUT VOLTAGE HYSTERESIS ∆V
1
Guaranteed by design.
IIN = 1 mA 40 ppm
OUT_HYS
ADR5043 ELECTRICAL CHARACTERISTICS
IIN = 50 μA to 15 mA, TA = 25°C, unless otherwise noted.
Table 4.
Parameter Symbol Conditions Min Typ Max Unit
OUTPUT VOLTAGE V
IIN = 100 μA
OUT
Grade A 2.994 3.000 3.006 V
Grade B 2.997 3.000 3.003 V
INITIAL ACCURACY V
IIN = 100 μA
OERR
Grade A –6 +6 mV
±0.2 %
Grade B –3 +3 mV
±0.1 %
TEMPERATURE COEFFICIENT
1
TCV
–40°C < TA < +125°C
OUT
Grade A 10 100 ppm/°C
Grade B 10 75 ppm/°C
OUTPUT VOLTAGE CHANGE vs. IIN ∆VR IIN = 50 μA to 1 mA
–40°C < TA < +125°C 0.7 2.2 mV
I
–40°C < TA < +125°C 4 8 mV
DYNAMIC OUTPUT IMPEDANCE (∆VR/∆IR) IIN = 50 μA to 15 mA 0.2 Ω
MINIMUM OPERATING CURRENT IIN TA = 25°C 50 μA
–40°C < TA < +125°C 60 μA
VOLTAGE NOISE eN I
I
TURN-ON SETTLING TIME tR C
OUTPUT VOLTAGE HYSTERESIS ∆V
1
Guaranteed by design.
IIN = 1 mA 40 ppm
OUT_HYS
ADR5044 ELECTRICAL CHARACTERISTICS
IIN = 50 μA to 15 mA, TA = 25°C, unless otherwise noted.
= 100 μA; 0.1 Hz to 10 Hz 3.2 μV rms
IN
= 100 μA; 10 Hz to 10 kHz 150 μV rms
IN
= 0 μF 35 μs
LOAD
= 1 mA to 15 mA
IN
= 100 μA; 0.1 Hz to 10 Hz 4.3 μV rms
IN
= 100 μA; 10 Hz to 10 kHz 180 μV rms
IN
= 0 μF 42 μs
LOAD
Table 5.
Parameter Symbol Conditions Min Typ Max Unit
OUTPUT VOLTAGE V
I
OUT
= 100 μA
IN
Grade A 4.088 4.096 4.104 V
Grade B 4.092 4.096 4.100 V
INITIAL ACCURACY V
IIN = 100 μA
OERR
Grade A –8.192 +8.192 mV
±0.2 %
Grade B –4.096 +4.096 mV
±0.1 %
Rev. A | Page 4 of 16
Page 5
ADR5040/ADR5041/ADR5043/ADR5044/ADR5045
www.BDTIC.com/ADI
Parameter Symbol Conditions Min Typ Max Unit
TEMPERATURE COEFFICIENT
Grade A 10 100 ppm/°C
Grade B 10 75 ppm/°C
OUTPUT VOLTAGE CHANGE vs. IIN ∆VR IIN = 50 μA to 1 mA
–40°C < TA < +125°C 0.7 3 mV
I
–40°C < TA < +125°C 4 8 mV
DYNAMIC OUTPUT IMPEDANCE (∆VR/∆IR) IIN = 50 μA to 15 mA 0.2 Ω
MINIMUM OPERATING CURRENT I
–40°C < TA < +125°C 60 μA
VOLTAGE NOISE eN I
I
TURN-ON SETTLING TIME tR C
OUTPUT VOLTAGE HYSTERESIS ∆V
1
Guaranteed by design.
ADR5045 ELECTRICAL CHARACTERISTICS
IIN = 50 μA to 15 mA, TA = 25°C, unless otherwise noted.
Table 6.
Parameter Symbol Conditions Min Typ Max Unit
OUTPUT VOLTAGE V
Grade A 4.990 5.000 5.010 V
Grade B 4.995 5.000 5.005 V
INITIAL ACCURACY V
Grade A –10 +10 mV
±0.2 %
Grade B –5 +5 mV
±0.1 %
TEMPERATURE COEFFICIENT
Grade A 10 100 ppm/°C
Grade B 10 75 ppm/°C
OUTPUT VOLTAGE CHANGE vs. IIN ∆VR IIN = 50 μA to 1 mA
–40°C < TA < +125°C 0.8 4 mV
I
–40°C < TA < +125°C 4 8 mV
DYNAMIC OUTPUT IMPEDANCE (∆VR/∆IR) IIN = 50 μA to 15 mA 0.2 Ω
MINIMUM OPERATING CURRENT IIN TA = 25°C 50 μA
–40°C < TA < +125°C 60 μA
VOLTAGE NOISE eN I
I
TURN-ON SETTLING TIME tR C
OUTPUT VOLTAGE HYSTERESIS ∆V
1
Guaranteed by design.
1
1
TCV
–40°C < TA < +125°C
OUT
= 1 mA to 15 mA
IN
T
IN
I
OUT_HYS
OUT
IIN = 100 μA
OERR
TCV
–40°C < TA < +125°C
OUT
IIN = 1 mA 40 ppm
OUT_HYS
= 25°C 50 μA
A
= 100 μA; 0.1 Hz to 10 Hz 5.4 μV rms
IN
= 100 μA; 10 Hz to 10 kHz 240 μV rms
IN
= 0 μF 56 μs
LOAD
= 1 mA 40 ppm
IN
IIN = 100 μA
= 1 mA to 15 mA
IN
= 100 μA; 0.1 Hz to 10 Hz 6.6 μV rms
IN
= 100 μA; 10 Hz to 10 kHz 280 μV rms
IN
= 0 μF 70 μs
LOAD
Rev. A | Page 5 of 16
Page 6
ADR5040/ADR5041/ADR5043/ADR5044/ADR5045
www.BDTIC.com/ADI
ABSOLUTE MAXIMUM RATINGS
Ratings apply at 25°C, unless otherwise noted.
Table 7.
Parameter Rating
Reverse Current 25 mA
Forward Current 20 mA
Storage Temperature Range –65°C to +150°C
Extended Temperature Range –40°C to +125°C
Junction Temperature Range –65°C to +150°C
Lead Temperature (Soldering, 60 sec) 300°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL RESISTANCE
θJA is specified for the worst-case conditions, that is, a device
soldered in a circuit board for surface-mount packages.
Figure 16. ADR504x Reverse Characteristics and Minimum Operating Current
1k
1101001k10k
FREQUENCY ( Hz)
Figure 18. ADR5045 Voltage Noise Density
06526-018
Rev. A | Page 9 of 16
Page 10
ADR5040/ADR5041/ADR5043/ADR5044/ADR5045
(
www.BDTIC.com/ADI
TERMINOLOGY
Temperature Coefficient
The change in output voltage with respect to operating temperature
hanges. It is normalized by an output voltage of 25°C. This
c
parameter is expressed in ppm/°C and is determined by the
following equation:
()()
−
TCV
OUT
ppm
⎡
⎢
⎣
⎤
=
⎥
°
⎦
2
OUT
()
O
C25C
UT
TVTV
1
OUT
()
−×°
6
10
×
TTV
(1)
12
where:
V
OUT
V
OUT(T1
V
OUT(T2
(25°C) = V
) = V
) = V
at 25°C.
OUT
at Temperature 1.
OUT
at Temperature 2.
OUT
Thermal Hysteresis
The change in output voltage after the device is cycled through
emperatures ranging from +25°C to −40°C, then to +125°C, and
t
back to +25°C. This is common in precision reference and is
caused by thermal-mechanical package stress. Changes in environmental storage temperature, board mounting temperature, and
the operating temperature are some of the factors that can
contribute to thermal hysteresis. The following equation
expresses a typical value from a sample of parts put through
such a cycle:
)
C25
−°=
VVV
TCOUTOUTHYSOUT
__
()
C25
−°
VV
TCOUTOUT
[]
ppm
V
HYSOUT
_
=
()
V
OUT
_
C25
°
(2)
6
10
×
where:
V
V
OUT
OUT_TC
(25°C) = V
= V
at 25°C.
OUT
at 25°C after a temperature cycle from +25°C to
OUT
−40°C, then to +125°C, and back to +25°C.
Rev. A | Page 10 of 16
Page 11
ADR5040/ADR5041/ADR5043/ADR5044/ADR5045
V
A
A
A
V
www.BDTIC.com/ADI
THEORY OF OPERATION
The ADR504x family uses the band gap concept to produce
a stable, low temperature coefficient voltage reference suitable
for high accuracy data acquisition components and systems. The
devices use the physical nature of a silicon transistor base-emitter
voltage in the forward-biased operating region. All such transistors
have approximately a −2 mV/°C temperature coefficient (TC),
making them unsuitable for direct use as a low temperature
coefficient reference. Extrapolation of the temperature characteristic of any one of these devices to absolute zero (with the
collector current proportional to the absolute temperature),
however, reveals that its V
approaches approximately the
BE
silicon band gap voltage. Therefore, if a voltage develops with
an opposing temperature coefficient to sum the V
, a zero
BE
temperature coefficient reference results.
APPLICATIONS INFORMATION
The ADR5040/ADR5041/ADR5043/ADR5044/ADR5045 are
a series of precision shunt voltage references. They are designed
to operate without an external capacitor between the positive
and negative terminals. If a bypass capacitor is used to filter the
supply, the references remain stable.
For a stable voltage, all shunt voltage references require an
xternal bias resistor (R
e
reference (see Figure 19). The R
through the load (I
and the supply voltage can vary, the R
based on the following considerations:
• R
must be small enough to supply the minimum I
BIAS
to the ADR5040/ADR5041/ADR5043/ADR5044/ADR5045,
even when the supply voltage is at its minimum value and
the load current is at its maximum value.
• R
must be large enough so that IIN does not exceed 15 mA
BIAS
when the supply voltage is at its maximum value and the
load current is at its minimum value.
Given these conditions, R
voltage (V
), the ADR5040/ADR5041/ADR5043/ADR5044/
S
ADR5045 load and operating current (I
ADR5040/ADR5041/ADR5043/ADR5044/ADR5045 output
voltage (V
).
OUT
−
S
=
R
BIAS
+
) between the supply voltage and the
BIAS
sets the current that flows
BIAS
) and the reference (IIN). Because the load
L
needs to be chosen
BIAS
current
IN
is determined by the supply
BIAS
and IIN), and the
L
VV
OUT
(3)
II
INL
Precision Negative Voltage Reference
The ADR5040/ADR5041/ADR5043/ADR5044/ADR5045 are
suitable for applications where a precise negative voltage is desired.
Figure 20 shows the ADR5045 configured to provide a negative
utput. Caution should be exercised in using a low temperature
o
sensitive resistor to avoid errors from the resistor.
Multiple ADR504x parts can be stacked together to allow the
user to obtain a desired higher voltage. Figure 21a shows three
R5045 devices configured to give 15 V. The bias resistor,
AD
, is chosen using Equation 3, noting that the same bias current
R
BIAS
flows through all the shunt references in series. Figure 21b shows
ee ADR5045 devices stacked together to give −15 V. R
thr
calculated in the same manner as before. Parts of different voltages
can also be added together; that is, an ADR5041 and an ADR5045
can be added together to give an output of +7.5 V or −7.5 V, as
desired. Note, however, that the initial accuracy error is the sum
of the errors of all the stacked parts, as are the temperature
coefficient and output voltage change vs. input current.
DR5045
DR5045
DR5045
Figure 21. ±15 V Output with Stacked ADR5045 Devices
S
R
IIN + I
BIAS
I
IN
DD
R
BIAS
(a)(b)
L
I
L
ADR5040/ADR5041/
ADR5043/ADR5044/
ADR5045
Figure 19. Shunt Reference
ADR5045
R
BIAS
V
CC
ADR5045
ADR5045
+15V
ADR5045
V
OUT
06526-019
V
OUT
–5V
06526-020
is
BIAS
–15V
R
BIAS
–V
DD
06526-021
Rev. A | Page 11 of 16
Page 12
ADR5040/ADR5041/ADR5043/ADR5044/ADR5045
V
V
www.BDTIC.com/ADI
Adjustable Precision Voltage Source
The ADR5040/ADR5041/ADR5043/ADR5044/ADR5045,
combined with a precision low input bias op amp such as the
AD8610, can be used to output a precise adjustable voltage.
Figure 22 illustrates the implementation of this application
g the ADR5040/ADR5041/ADR5043/ADR5044/ADR5045.
usin
The output of the op amp, V
, is determined by the gain of the
OUT
circuit, which is completely dependent on the resistors, R1 and R2.
= (1 + R2/R1)V
V
OUT
REF
An additional capacitor, C1, in parallel with R2, can be added to
ilter out high frequency noise. The value of C1 is dependent on
f
the value of R2.
CC
R
BIAS
V
REF
ADR5040/ADR5041/
ADR5043/ADR5044/
ADR5045
Figure 22. Adjustable Voltage Source
GND
AD8610
R2
R1
C1
(OPTIO NAL)
= V
V
OUT
(1 + R2/R1)
REF
06526-022
Programmable Current Source
By using just a few ultrasmall and inexpensive parts, it is possible
to build a programmable current source, as shown in Figure 23.
e constant voltage on the gate of the transistor sets the current
Th
through the load. Varying the voltage on the gate changes the
2
current. The AD5247 is a digital potentiometer with I
C® digital
interface, and the AD8601 is a precision rail-to-rail input op
p. Each incremental step of the digital potentiometer increases
am
or decreases the voltage at the noninverting input of the op amp.
Therefore, this voltage varies with respect to the reference
voltage.
DD
R
BIAS
ADR5040/
ADR5041/
ADR5043/
ADR5044/
ADR5045
AD5247
Figure 23. Programmable Current Source
V+
AD8601
V–
R
SENSE
I
LOAD
06526-023
Rev. A | Page 12 of 16
Page 13
ADR5040/ADR5041/ADR5043/ADR5044/ADR5045
www.BDTIC.com/ADI
OUTLINE DIMENSIONS
2.20
2.00
1.35
1.25
1.15
PIN 1
1.00
0.80
0.10 MAX
0.10 COPLANARITY
Figure 24. 3-Lead Thin Shrink Small Outline Transistor Package [SC70]
1.40
1.20
1.80
21
0.65 BSC
2.40
2.10
1.80
1.10
0.80
SEATING
PLANE
0.26
0.10
0.40
0.10
3
0.40
0.25
ALL DIMENSIONS COMPLIANT WITH EIAJ SC70
(KS-3)
Dimensions shown in millimeters
3.04
2.80
3
1
2.64
2.10
2
0.30
0.20
0.10
111505-0
0.60
0.100
0.013
SEATING
PLANE
0.45
2.05
1.78
COMPLIANT TO JEDEC STANDARDS TO-236-AB
Figure 25. 3-Lead Small Outline Transistor Package [SOT-23-3]
Purchase of licensed I2C components of Analog Devices or one of its sublicensed Associated Companies conveys a license for the purchaser under the Philips I2C Patent
Rights to use these components in an I2C system, provided that the system conforms to the I2C Standard Specification as defined by Philips.