FEATURES
5-Bit Digitally Programmable 1.8 V to 3.5 V Output
Voltage
Dual N-Channel Synchronous Driver
Total Output Accuracy ⴞ1% (0ⴗC to +70ⴗC)
High Efficiency
Current-Mode Operation
Short Circuit Protection
Power Good Output
Overvoltage Protection Crowbar
On-Board Linear Regulator Controller
VRM 8.2 Compatible
Narrow Body TSSOP 20-Lead Package
APPLICATIONS
Desktop PC Power Supply for:
Pentium II Processor
Deschutes Processor
Pentium Pro Processor
Pentium Processor
AMD–K6 Processor
VRM Modules
GENERAL DESCRIPTION
The ADP3153 is a highly efficient synchronous switching regulator controller and a linear regulator controller. The switching
regulator controller is optimized for Pentium II and Deschutes
Processor applications where 5 V is stepped down to a digitally
controlled output voltage between 1.8 V and 3.5 V. Using a 5-bit
DAC to read a voltage identification (VID) code directly from
the processor, the ADP3153 uses a current mode constant offtime architecture to generate its precise output voltage.
The ADP3153 drives two N-channel MOSFETS in a synchronous rectified buck converter, at a maximum switching frequency of 250 kHz. Using the recommended loop compensation
and guidelines, the ADP3153 provides a dc/dc converter that
meets Intel’s stringent transient specifications with a minimum
number of output capacitors and smallest footprint. Additionally, the current mode architecture also provides guaranteed
short circuit protection and adjustable current limiting.
The ADP3153’s linear regulator controller drives an external
N-channel device. The output voltage is set by the ratio of the
external feedback resistors. The controller has been designed for
excellent load transient response.
V
CC
+12V
V
+5V
IN
22mF
C
COMP
150pF
1mF
SD
CMP
ADP3153
VLDO
FB
C
T
AGND
VID0–VID4
5-BIT CODE
V
+3.3V
R1
V
IN
+5V
O2
1A
IRL2703
1000mF
R2
35kV
20kV
Figure 1. Typical Application
Pentium is a registered trademark of Intel Corporation.
All other trademarks are the property of their respective holders.
REV. 0
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
2.8 V Output VoltageOutput Voltage (Figure 1)–1.01.0%
3.5 V Output Voltage–1.01.0%
I
OUTPUT VOLTAGE LINE∆V
O
= 10 A (Figure 2)
LOAD
REGULATIONVIN = 4.75 V to 5.25 V0.05%
OUTPUT VOLTAGE LOAD∆V
O
REGULATION200 mA < I
INPUT DC SUPPLY CURRENT
Normal ModeI
1
Q
ShutdownT
(Figure 2)
< 14 A0.1%
LOAD
VSD = 0.8 V4.15.5mA
= +25°C, VSD = 2.0 V140250µA
A
CURRENT SENSE THRESHOLD
VOLTAGEV11–V
VID PINS THRESHOLDV
, V1–V
20
V
4
Forced to V
10
10
– 3%125145165mV
OUT
Low0.6V
High2.0V
VID PINS INPUT CURRENTI20, I1–I
VID0–VID4 PULL-UP RESISTANCER
PIN DISCHARGE CURRENTI
C
T
OFFTIMEt
DRIVER OUTPUT TRANSITIONt
VID
12
OFF
, t
R
F
TIMEST
POSITIVE POWER GOOD TRIP POINTV
NEGATIVE POWER GOOD TRIP POINTV
POWER GOOD RESPONSE TIMEt
CROWBAR TRIP POINTV
PWRGD
PWRGD
PWRGD
CROWBAR
VID
4
= 0 V110220µA
2030kΩ
T
= +25°C
A
V
in Regulation65µA
OUT
V
= 0 V210µA
OUT
C
= 150 pF1.82.453.2µs
T
CL = 7000 pF (Pins 16, 17)
= +25°C120200ns
A
% Above Output Voltage58%
% Below Output Voltage–8–5%
500µs
% Above Output Voltage91524%
ERROR AMPLIFIER OUTPUT
IMPEDANCERO
ERR
145kΩ
ERROR AMPLIFIER
TRANSCONDUCTANCEGM
ERR
2.2mmho
ERROR AMPLIFIER MINIMUM
OUTPUT VOLTAGEV
CMPMIN
V10 Forced to V
+ 3%0.8V
OUT
ERROR AMPLIFIER MAXIMUM
OUTPUT VOLTAGEV
CMPMAX
ERROR AMPLIFIER BANDWIDTH –3 dBBW
ERR
V10 Forced to V
– 3%2.4V
OUT
CMP = Open500kHz
LINEAR REGULATOR FEEDBACK
CURRENTI
LINEAR REGULATOR OUTPUTFigure 2
VOLTAGE
2
FB
V
O2
R
= 35K, R3 = 20K, IO2 = 1 A3.243.303.38V
PROG
0.351µA
SHUTDOWN (SD) PIN
Low ThresholdSD
High ThresholdSD
Input CurrentSD
NOTES
1
Dynamic supply current is higher due to the gate charge being delivered to the external MOSFETS.
2
The LDO is tested in a V
be set.
All limits at temperature extremes are guaranteed via correlation using standard quality control methods.
Specifications are subject to change without notice.
= 3.3 V configuration with the circuit shown in Figure 2. By selecting a different R
OUT
L
H
IB
Part Active0.6V
Part in Shutdown2.0V
10µA
value, any output voltage above 1.20 V can
PROG
–2–REV. 0
Page 3
ADP3153
PIN FUNCTION DESCRIPTIONS
PinMnemonicFunction
1–4, 20VID1–VID4,Voltage Identification DAC Input Pins. These pins are internally pulled up to V
VID0logic high if left open. The DAC output range is 600 mV to 1.167 V. Leaving all five DAC
inputs open results in placing the ADP3153 into shutdown.
5AGNDAnalog Ground Pin. This pin must be routed separately to the (–) terminal of C
6SDShutdown Pin. A logic high will place the ADP3153 in shutdown and disable both outputs. This
pin is internally pulled down.
7FBThis pin is the feedback connection for the linear controller. Connect this pin to the resistor
divider network to set the output voltage of the linear regulator.
8, 18NCNo Connect.
9VLDOGate Drive for the Linear Regulator N-channel MOSFET.
10SENSE–Connects to the internal resistor divider which along with the VID code, sets the output voltage.
Pin 10 is also the (–) input for the current comparator.
11SENSE+The (+) input for the current comparator. A threshold between Pins 10 and 11 set by the error
12C
amplifier in conjunction with R
T
External Capacitor CT from Pin 12 to ground sets the off time of the device.
, sets the current trip point.
SENSE
13CMPError Amplifier Compensation Point. The current comparator threshold increases with the Pin
13 voltage.
14PWRGDPower Good Pin. An open drain signal to indicate that the output voltage is within a ±5% regu-
lation band.
15V
CC
Input Voltage Pin.
16DRIVE2Gate Drive for the Synchronous Rectifier N-channel MOSFET. The voltage at Pin 16 swings
from ground to V
CC
.
17DRIVE1Gate Drive for the buck switch N-channel MOSFET. The voltage at Pin 17 swings from ground
to V
.
CC
19PGNDDriver Power Ground. Connects to the source of the bottom N-channel MOSFET onto the (–)
terminal of CIN.
providing a
REG
.
OUT
ABSOLUTE MAXIMUM RATINGS*
Input Supply Voltage (Pin 15) . . . . . . . . . . . . –0.3 V to +16 V
Shutdown Input Voltage . . . . . . . . . . . . . . . . –0.3 V to +16 V
Storage Temperature Range . . . . . . . . . . . . –65°C to +150°C
Lead Temperature Range (Soldering 10 sec) . . . . . . . .+300°C
*This is a stress rating only; operation beyond these limits can cause the device to
be permanently damaged.
ORDERING GUIDE
Temperature PackagePackage
ModelRangeDescriptionOption
VID1
VID2
VID3
VID4
AGND
SD
FB
NC
VLDO
SENSE–
1
2
3
4
5
ADP3153
TOP VIEW
6
(Not to Scale)
7
8
9
10
NC = NO CONNECT
ADP3153ARU 0°C to +70°CThin Shrink Small RU-20
Outline (TSSOP)
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the ADP3153 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
Figure 10. Transient Response,
1A–14 A of Figure 2 Circuit
500ns/DIV
Figure 8. Driver Transition Waveforms
100ns/DIV
Figure 9. Transient Response,
14 A–1A of Figure 2 Circuit
VCC VOLTAGE
5V/DIV
3
REGULATOR
OUTPUT VOLTAGE
1V/DIV
4
10ms/DIV
Figure 11. Power-On Start-Up
Figure 12. Output Accuracy Distribution
Waveforms
–5–REV. 0
Page 6
ADP3153
12V
V
DRIVE1
DRIVE2
SENSE+
SENSE–
PGND
0.1mF
CC
1mF
0.1mF
V
OUT
5-BIT
CODE
␣
1kV
4700pF
1.2V
100kV
VID0–
VID4
SD
CMP
C
T
AGND
ADP3153
OP27
Figure 13. Closed-Loop Test Circuit for Accuracy
APPLICATION INFORMATION
The ADP3153 uses a current-mode, constant-off-time control
technique to switch a pair of external N-channel MOSFETs in
a synchronous rectified buck converter application. Due to the
constant-off-time operation, no slope compensation is needed.
A unique feature of the constant-off-time control technique is
that the converter’s frequency becomes a function of the ratio of
input voltage to output voltage. The off time is determined by
the value of the external capacitor connected to the C
pin.
T
The on time varies in such a way that a regulated output voltage is maintained.
The output voltage is sensed by an internal voltage divider that
is connected to the SENSE– pin. A voltage-error amplifier g
m
compares the values of the divided output voltage with a reference voltage. The reference voltage is set by an on-board 5-bit
DAC, which reads the code present at the voltage identification
(VID) pins and converts it to a precise value between 600 mV
and 1.167 V. Refer to Table I for the output voltage vs. VID pin
code information.
During continuous-inductor-current mode of operation, the
voltage-error amplifier g
and the current comparator CMPI
m
are the main control elements. During the on time of the high
side MOSFET, the current comparator CMPI monitors the
voltage between the SENSE+ and SENSE– pins. When the
voltage level between the two pins reaches the threshold level
, the high side drive output is switched to zero, which turns
V
T1
off the high side MOSFET. The timing capacitor C
is now
T
discharged at a rate determined by the off time controller. In
order to maintain a ripple current in the inductor, which is
independent of the output voltage, the discharge current is
made proportional to the value of the output voltage (measured at the SENSE– pin). While the timing capacitor is discharging, the low side drive output goes high, turning on the
low side MOSFET. When the voltage level on the timing capacitor has discharged to the threshold voltage level V
T2
,
comparator CMPT resets the SR flip-flop. The output of the
flip-flop forces the low side drive output to go low and the high
side drive output to go high. As a result, the low side switch is
turned off and the high side switch is turned on. The sequence is
then repeated. As the load current increases, the output voltage
starts to decrease. This causes an increase in the output of the
voltage-error amplifier, which, in turn, leads to an increase in
the current comparator threshold V
To prevent cross conduction of the external MOSFETs, feedback is incorporated to sense the state of the driver output pins.
Before the low side drive output can go high, the high side drive
output must be low. Likewise, the high side drive output is
unable to go high while the low side drive output is high.
Power Good
The ADP3153 has an internal monitor which monitors the
output voltage and drives the PWRGD pin of the device. This
pin is an open drain output whose high level (when connected
to a pull-up resistor) indicates that the output voltage has been
within a ±5% regulation band of the targeted value for more
than 500 µs. The PWRGD pin will go low if the output is outside the regulation band for more than 500 µs.
Output Crowbar
An added feature of using an N-channel MOSFET as the synchronous switch is the ability to crowbar the output with the
same MOSFET. If the output voltage is 15% greater than the
desired regulated value, the ADP3153 will turn on the lower
MOSFET, which will current-limit the source power supply or
blow its fuse, pull down the output voltage, and thus save the
expensive microprocessor from destruction. The crowbar function releases at approximately 50% of the nominal output voltage. For example, if the output is programmed to 2.0 V, but is
pulled up to 2.3 V or above, the crowbar will turn on the lower
MOSFET. If in this case the output is pulled down to less than
Page 7
ADP3153
1.0 V, the crowbar will release, allowing the output voltage to
recover to 2.0 V.
Shutdown
The ADP3153 has a shutdown pin which is pulled logic low by
an internal resistor. In this condition the device functions normally. This pin should be pulled high externally to disable the
output drives.
Calculation of Component Values
The design parameters for a typical 300 MHz Pentium II application (Figure 2) are as follows:
Input voltage: V
Auxiliary input: V
Output voltage: V
= 5 V
IN
CC
= 2.8 V
O
= 12 V
Maximum output current:
I
= 14.2 Adc
OMAX
Minimum output current:
I
= 0.8 Adc
OMIN
Static tolerance of the supply voltage for the processor core:
∆V
= 100 mV
OST+
= –60 mV
∆V
OST–
Transient tolerance (for less than 2 µs) of the supply voltage for
the processor core when the load changes between the minimum
and maximum values with a di/dt of 30 A/µs:
∆V
= 130 mV
OTR+
= –130 mV
∆V
OTR–
Input current di/dt when the load changes between the mini-
mum and maximum values: less than 0.1 A/µs
The above requirements correspond to Intel’s published power
supply requirements based on VRM 8.2 guidelines.
CT Selection for Operating Frequency
The ADP3153 uses a constant-off-time architecture with t
OFF
determined by an external timing capacitor CT. Each time the
high side N-channel MOSFET switch turns on, the voltage
across C
C
T
is reset to approximately 3.3 V. During the off time,
T
is discharged by a constant current of 65 µA to 2.3 V, that is
by 1 V. The value of the off time is calculated from the preferred continuous-mode operating frequency. Assuming a nominal operating frequency of f
= 2.8 V, the corresponding off time is:
of V
O
t
= 1–
OFF
= 200 kHz at an output voltage
NOM
1
V
O
V
IN
f
=2. 2 µs
NOM
The timing capacitor can be calculated from the equation:
t
×65 µA
OFF
C
=
T
1V
=143 pF
The converter operates at the nominal operating frequency only
at the above specified V
and at light load. At higher VO, and
O
heavy load, the operating frequency decreases due to the parasitic voltage drops across the power devices. The actual minimum frequency at V
= 2.8 V is calculated to be 160 kHz (see
O
Equation 1 below), where:
I
IN
R
IN
is the input dc current (assuming an efficiency
of 90%, I
= 9 A)
IN
is the resistance of the input filter (estimated
value: 7 mΩ)
R
DS(ON)HSF
is the resistance of the high side MOSFET
(estimated value: 10 mΩ)
R
DS(ON)LSF
is the resistance of the low side MOSFET
(estimated value: 10 mΩ)
R
SENSE
is the resistance of the sense resistor
(estimated value: 7 mΩ)
R
L
is the resistance of the inductor (estimated
value: 6 mΩ)
CO Selection—Determining the ESR
The selection of the output capacitor is driven by the required
ESR and capacitance C
. The ESR must be small enough that
O
both the resistive voltage deviation due to a step change in the
load current and the output ripple voltage stay below the values
defined in the specification of the supplied microprocessor. The
capacitance, C
, must be large enough that the output is held
O
up while the inductor current ramps up or down to the value
corresponding to the new load current.
The total static tolerance of the Pentium II processor is 160 mV.
Taking into account the ±1% setpoint accuracy of the ADP3153,
and assuming a 0.5% (or 14 mV) peak-to-peak ripple, the allowed static voltage deviation of the output voltage when the
load changes between the minimum and maximum values is
0.08 V. Assuming a step change of ∆I = I
OMAX–IOMIN
= 13.4 A,
and allocating all of the total allowed static deviation to the
contribution of the ESR sets the following limit:
R
E MAX
= ESR
()
MAX1
=
0.08
13.4
= 5. 9 mΩ
The output filter capacitor must have an ESR of less than
5.9 mΩ. One can use, for example, six FA type capacitors from
Panasonic, with 2700 µF capacitance, 10 V voltage rating, and
34 mΩ ESR. The six capacitors have a total typical ESR of
~ 5 mΩ when connected in parallel.
Inductor Selection
The minimum inductor value can be calculated from ESR, off
time, dc output voltage and allowed peak-to-peak ripple voltage.
L
MIN1
V
OtOFFRE( MAX )
=
V
RIPPLE , p−p
2.8 × 2.2 µ×5. 9 m
=
14 m
= 2. 6 µH
The minimum inductance gives a peak-to-peak ripple current of
2.15 A, or 15% of the maximum dc output current I
OMAX
.
MIN
1
=
t
OFF
f
V
– IINRIN– I
IN
×
VIN– IINRIN– I
OMAX(RDS(ON)HSF+RSENSE+RL
OMAX(RDS(ON)HSF+RSENSE+RL
– R
)–V
O
DS(ON)LSF
=160 kHz
)
(1)
–7–REV. 0
Page 8
ADP3153
The inductor peak current in normal operation is:
I
LPEAK
= I
OMAX
+ I
/2 = 15.3 A
RPP
The inductor valley current is:
I
LVALLEY
= I
LPEAK
– I
RPP
= 13 A
The inductor for this application should have an inductance
of 2.6 µH at full load current and should not saturate at the
worst-case overload or short circuit current at the maximum
specified ambient temperature. A suitable inductor is the
CTX12-13855 from Coiltronics, which is 4.4 µH at 1 A and
about 2.5 µH at 14.2 A.
Tips for Selecting Inductor Core
Ferrite designs have very low core loss, so the design should
focus on copper loss and on preventing saturation. Molypermalloy,
or MPP, is a low loss core material for toroids, and it yields the
smallest size inductor, but MPP cores are more expensive than
cores or the Kool Mµ® cores from Magnetics, Inc. The lowest
cost core is made of powdered iron, for example the #52 material
from Micrometals, Inc., but yields the largest size inductor.
CO Selection—Determining the Capacitance
The minimum capacitance of the output capacitor is determined
from the requirement that the output be held up while the inductor current ramps up (or down) to the new value. The minimum capacitance should produce an initial dv/dt which is equal
(but opposite in sign) to the dv/dt obtained by multiplying the
dt in the inductor and the ESR of the capacitor.
I
– I
C
MIN
OMAX
=
RE(di /dt )
OMIN
14.2–0.8
=
5. 9 m (2.2 / 4.4 µH )
= 4.5 mF
In the above equation the value of di/dt is calculated as the
smaller voltage across the inductor (i.e., V
– VO rather than VO)
IN
divided by the maximum inductance (4.4 µH) of the CTX12-
13855 inductor from Coiltronics. The parallel-connected six
2700 µF/10 V FA series capacitors from Panasonic have a total
capacitance of 16,200 µF, so the minimum capacitance is met
with ample margin.
R
SENSE
The value of R
is based on the required output current.
SENSE
The current comparator of the ADP3153 has a threshold range
that extends from 0 mV to 125 mV (minimum). Note that the
full 125 mV range cannot be used for the maximum specified
nominal current, as headroom is needed for current ripple, transients and inductor core saturation.
The current comparator threshold sets the peak of the inductor
current yielding a maximum output current I
which equals
OMAX,
the peak value less half of the peak-to-peak ripple current. Solving for R
and allowing a margin for tolerances inside the
SENSE
ADP3153 and in the external component values yields:
R
= (125 mV)/[1.2(I
SENSE
OMAX
+ I
/2)] = 6.8 m
RPP
Ω
A practical solution is to use three 20 mΩ resistors in parallel,
with an effective resistance of about 6.7 mΩ.
Once R
I
SC(PK)
I
SC(PK)
has been chosen, the peak short-circuit current
SENSE
can be predicted from the following equation:
= (145 mV)/R
= (145 mV)/(6.7 mΩ) = 21.5 A
SENSE
The actual short-circuit current is less than the above calculated
I
value because the off time rapidly increases when the
SC(PK)
output voltage drops below 1 V. The relationship between the
off time and the output voltage is:
C
×1V
≈
360 kΩ
T
V
O
+2 µA
t
OFF
With a short across the output, the off time will be about
70 µs. During that off time the inductor current gradually de-
cays. The amount of decay depends on the L/R time constant in
the output circuit. With an inductance of 2.5 µH and total resis-
tance of 23 mΩ, the time constant will be 108 µs, which yields a
valley current of 11.3 A and an average short-circuit current of
about 16.3 A. To safely carry the short-circuit current, the sense
resistor must have a power rating of at least 16.3 A
2
× 6.8 mΩ =
1.8 W.
Current Transformer Option
An alternative to using low value and high power current sense
resistor is to reduce the sensed current by using a low cost current transformer and a diode. The current can then be sensed
with a small-size, low cost SMT resistor. If we use a transformer
with one primary and 50 secondary turns, the worst-case resistor
dissipation is reduced to a fraction of a mW. Another advantage
of using this option is the separation of the current and voltage
sensing, which makes the voltage sensing more accurate.
Power MOSFET
Two external N-channel power MOSFETs must be selected for
use with the ADP3153, one for the main switch, and an identical one for the synchronous switch. The main selection parameters for the power MOSFETs are the threshold voltage V
and the on resistance R
DS(ON)
.
GS(TH)
The minimum input voltage dictates whether standard threshold
or logic-level threshold MOSFETs must be used. For V
standard threshold MOSFETs (V
is expected to drop below 8 V, logic-level threshold MOSFETs
V
IN
(V
MOSFETs with V
of V
The maximum output current I
< 2.5 V) are strongly recommended. Only logic-level
GS(TH)
should be used.
CC
ratings higher than the absolute maximum
GS
OMAX
< 4 V) may be used. If
GS(TH)
determines the R
> 8 V,
IN
DS(ON)
requirement for the two power MOSFETs. When the ADP3153
is operating in continuous mode, the simplifying assumption can
be made that one of the two MOSFETs is always conducting
the average load current.
For V
= 5 V and VO = 2.8 V, the maximum duty ratio of the
IN
high side FET is:
D
MAXHF
= (1 – f
MIN
× t
) =(1 – 160 kHz
OFF
× 2.2 µs) = 65%
The maximum duty ratio of the low side (synchronous rectifier)
FET is:
D
MAXLF
= 1 – D
MAXHF
= 35%
The maximum rms current of the high side FET is:
I
RMSLS
= [D
MAXHF (ILVALLEY2
+ I
LPEAK
2
+ I
LVALLEYILPEAK
)/3]
0.5
= 11.5 Arms
–8–REV. 0
Page 9
ADP3153
The maximum rms current of the low side FET is:
I
RMSLS
= [D
MAXLF (ILVALLEY2
+ I
LPEAK
2
+ I
LVALLEYILPEAK
)/3]
0.5
= 8.41 Arms
The R
for each FET can be derived from the allowable
DS(ON)
dissipation. If we allow 5% of the maximum output power for
FET dissipation, the total dissipation will be:
P
FETALL
= 0.05 VOI
OMAX
= 2 W
Allocating two-thirds of the total dissipation for the high side
FET and one-third for the low side FET, the required minimum
FET resistances will be:
R
DS(ON)HSF(MIN)
R
DS(ON)LSF(MIN)
= 1.33/11.52 = 10 m
= 0.67/8.412 = 9.5 m
Ω
Ω
Note that there is a tradeoff between converter efficiency and
cost. Larger FETs reduce the conduction losses and allow higher
efficiency but lead to increased cost. If efficiency is not a major
concern the Fairchild MOSFET NDP6030L or International
Rectifier IRL3103 is an economical choice for both the high side
and low side positions. Those devices have an R
= 10 V and at 25°C. The low side FET is turned on with
at V
GS
DS(ON)
of 14 mΩ
at least 10 V. The high side FET, however, is turned on with
only 12 V – 5 V = 7 V. If we check the typical output characteristics of the device in the data sheet, we find that for an output
current of 10 A, and at a V
gives a R
DS(ON)
= VDS/I
above the one specified at a V
of 7 V, the VDS is 0.15 V, which
GS
= 15 mΩ. This value is only slightly
D
of 10 V, so the resistance in-
GS
crease due to the reduced gate drive can be neglected. We have
to modify, however, the specified R
est FET junction temperature of 140°C by a R
at the expected high-
DS(ON)
DS(ON)
multiplier,
using the graph in the data sheet. In our case:
R
DS(ON)MULT
Using this multiplier, the expected R
= 1.7
at 140°C is 1.7 × 14
DS(ON)
= 24 mΩ.
The high side FET dissipation is:
P
DFETHS
= I
RMSHS
2
R
DS(ON)
+ 0.5 VINI
LPEAKQGfMAX/IG
= 3.72 W
where the second term represents the turn-off loss of the FET.
(In the second term, Q
the gate for turn-off and I
sheet, Q
is about 50 nC – 70 nC and the gate drive current
G
is the gate charge to be removed from
G
is the gate current. From the data
G
provided by the ADP3153 is about 1 A.)
The low side FET dissipation is:
P
DFETLS
= I
RMSLS
2
R
DS(ON)
= 1.7 W
(Note that there are no switching losses in the low side FET.)
To remove the dissipation of the chosen FETs, proper heatsinks
should be used. The Thermalloy 6030 heatsink has a thermal
impedance of 13°C/W with convection cooling. With this heat-
sink, the junction-to-ambient thermal impedance of the chosen
high side FET θ
will be 13 (heatsink-to-ambient) + 2 (junction-
JAHS
to-case) + 0.5 (case-to-heatsink) = 15.5°C/W.
At full load and at 50°C ambient temperature, the junction
temperature of the high side FET is:
T
JHSMAX
= TA +
θ
JAHS PDFETHS
= 105°C
A smaller heatsink may be used for the low side FET, e.g., the
Thermalloy type 7141 (θ = 20.3°C/W). With this heatsink, the
T
JLSMAX
= TA +
θ
JALS PDFETLS
= 106°C
All of the above calculated junction temperatures are safely
below the 175°C maximum specified junction temperature of
the selected FET.
The maximum operating junction temperature of the ADP3153
is calculated as follows:
T
where θ
is the junction to ambient thermal impedance of the
JA
ADP3153 and P
is equal to 110°C/W and I
= TA +
JICMAX
is the drive power. From the data sheet, θ
DR
θ
JA (IICVCC
= 2.7 mA. PDR can be calculated as
IC
+ PDR)
JA
follows:
P
DR
= (C
RSS
+ C
ISS)VCC
2
f
MAX
= 307 mW
The result is:
T
= 86°C
JICMAX
CIN Selection and Input Current di/dt Reduction
In continuous-inductor-current mode, the source current of the
high side MOSFET is a square wave with a duty ratio of V
. To keep the input ripple voltage at a low value, one or
V
IN
/
O
more capacitors with low equivalent series resistance (ESR) and
adequate ripple-current rating must be connected across the
input terminals. The maximum rms current of the input bypass
capacitors is:
I
CINRMS
≈ [V
O(VIN
– VO)]
0.5
I
OMAX
/V
= 7 Arms
IN
Let us select the FA-type capacitor with 2700 µF capacitance
and 10 V voltage rating. The ESR of that capacitor is 34 mΩ
and the allowed ripple current at 100 kHz is 1.94 A. At 105°C
we would need to connect at least four such capacitors in paral-
lel to handle the calculated ripple current. At 50°C ambient,
however, the ripple current can be increased, so three capacitors
in parallel are adequate.
The ripple voltage across the three paralleled capacitors is:
V
CINRPL
= I
[ESRIN/3 + D
OMAX
MAXHF
/(3C
)] ⬇ 140 mV p-p
IN fMIN
To further reduce the effect of the ripple voltage on the system
supply voltage bus and to reduce the input-current di/dt to
below the recommended maximum of 0.1 A/µs, an additional
small inductor (L > 1.7 µH @ 10 A) should be inserted between
the converter and the supply bus (see Figure 2).
Feedback Loop Compensation Design
To keep the peak-to-peak output voltage deviation as small as
possible, the low frequency output impedance (i.e., the output
resistance) of the converter should be made equal to the ESR of
the output capacitor. That can be achieved by having a single-pole
roll-off of the voltage gain of the g
error amplifier, where the pole
m
frequency coincides with the ESR zero of the output capacitor. A
gain with single-pole roll-off requires that the g
amplifier is termi-
m
nated by the parallel combination of a resistor and capacitor. The
required resistor value can be calculated from the equation:
36 × R
where g
SENSE
g
145 kΩ储R
()
m
= 2.2 ms and the quantities 36 and 145 kΩ are charac-
m
COMP
= R
E
teristic of the ADP3153. The calculated compensating resistance is:
R1储R2 = R
COMP
= 31 kΩ
–9–REV. 0
Page 10
ADP3153
TT VI
C
FETMAXAMBAINO MAX
=+×× ×=
+×× ×= °
θ
J2
11
50 40 5 0 5 1 1 160
.
..
R
S2
1.1V
470pF
2N2222
VIN = +5V
IRX3803
2kV
1000mF/10V
VO2 = 3.3V
I
O2
= 0.5A
VLDO
ADP3153
FB
20kV
R
PROG
35kV
The compensating capacitance is determined from the equality
of the pole frequency of the error amplifier gain and the zero
frequency of the impedance of the output capacitor.
C
RC
E OUT
==×=
COMP
R
COMP
mmF
5162
k
31
Ω
nF
26..
In the application circuit we tested, we found that the compensation scheme shown in Figure 2 gave the optimal response to
meet the Pentium II dc/dc static and transient specifications
with sufficient margins including the ADP3153’s initial error
tolerance, the PCB layout trace resistances, and the external
component parasitics. If we increase the load resistance to the
COMP pin, the static regulation will improve. The load transient
response, however, will get worse. In Figure 2, if we decrease the
R1 = 150 kΩ resistor vs. the R2 = 39 kΩ resistor, the regulation
band will shift positive in relation to the 2.8 V. If we increase
the R1 resistor, the regulation band will shift negative. It may be
necessary to adjust these resistor values to obtain the best static
and dynamic regulation compliance depending on the output
capacitor ESR and the parasitic trace resistances of the PCB
layout. A detailed design procedure and published conference
papers on the optimal compensation are available on ADI’s
website (http://www.analog.com).
ADP3153 Linear Regulator
The ADP3153 linear regulator provides a low cost, convenient,
and versatile solution for generating an additional power supply
rail that can be programmed between 1.2 V–5 V. The maximum
output load current is determined by the size and thermal impedance of an external N-channel power MOSFET that is placed in
series with the 5 V supply and controlled by the ADP3153. The
output voltage, V
in Figure 14, is sensed at the FB pin of the
O2
ADP3153 and compared to an internal 1.2 V reference in a
negative feedback loop which keeps the output voltage in regulation. Thus, if the load is being reduced or increased, the FET
drive will also be reduced or increased by the ADP3153 to pro-
vide a well regulated ±1% accurate output voltage. This accu-
racy is maintained even if the load changes at the very high rate
typical of CPU-type loads. The output voltage is programmed
by adjusting the value of the external resistor R
PROG
shown in
Figure 14.
Features
• Typical Efficiency: 66% at 3.3 V Output Voltage
• Tight DC Regulation Due to 1% Reference and High Gain
• Output Voltage Stays Within Specified Limits at Load Cur-
rent Step with 30 A/µs Slope
• Fast Response to Input Voltage or Load Current Transients
The design in Figure 14 is for an output voltage, V
of 3.3 V
O2
with a maximum load current of 0.5 A. Additionally, overcurrent
protection is provided by the addition of an external NPN transistor and an external resistor R
. The design specifications and
S2
procedure is given below.
Linear Regulator Design Specifications
Maximum Ambient Temperature . . . . . . . . . . . T
The output voltage may be programmed by the resistor R
PROG
as follows:
R
PROG
=
12
×=
120
–
.
V
O
2
33
kkk
.
×=
12035
–ΩΩΩ
12
.
The current sense resistor may be calculated as follows:
0606
2
I
2
O MAX
..
05
.
12===
. Ω
R
S
The power rating is:
PR IW
222
SSO MAX
()
11036=× ×
2
=..
Use a 0.5 Ω resistor.
The maximum FET junction temperature at shorted output is:
which is within the maximum allowed by the FET's data sheet.
The maximum FET junction temperature at nominal output is:
TT VVI
FETMAXAMBAINOO MAX
50 405 3 3 0 5 84
=+×
+×
()
θ
J
×=°
–..
×=
–
()
22
C
The output filter capacitor maximum allowed ESR is:
ESR ~ V
TR2/IOMAX
= 0.036/0.5 = 0.072 Ω.
This requirement is met using a 1000 µF/10 V LXV series ca-
pacitor from United Chemicon. For applications requiring
higher output current, a heatsink and/or a larger MOSFET
should be used to reduce the MOSFET’s junction to ambient
thermal impedance.
Figure 14. Linear Regulator with Overcurrent Protection
–10–REV. 0
Page 11
ADP3153
BOARD LAYOUT
A multilayer PCB is recommended with a minimum of two
copper layers. One layer on top should be used for traces interconnecting low power SMT components. The ground terminals
of those components should be connected with vias to the bottom traces connecting directly to the ADP3153 ground pins.
One layer should be a power ground plane. If four layers are
possible, one additional layer should be an internal system
ground plane, and one additional layer can be used for other
system interconnections.
When laying out the printed circuit board, the following checklist should be used to ensure proper operation of the ADP3153.
Board Layout Guidelines
1. The power loop should be routed on the PCB to encompass
small areas to minimize radiated switching noise energy to
the control circuit and thus to avoid circuit problems caused
by noise. This technique also helps to reduce radiated EMI.
The power loop includes the input capacitors, the two
MOSFETs, the sense resistor, the inductor and the output
capacitors. The ground terminals of the input capacitors,
the low side FET, the ADP3153 and the output capacitors
should be connected together with short and wide traces. It is
best to use an internal ground plane.
2. The PGND (power ground) pin of the ADP3153 must return to the grounded terminals of the input and output capacitors and to the source of the low side MOSFET with the
shortest and widest traces possible. The AGND (analog
ground) pin has to be connected to the ground terminals of
the timing capacitor and the compensating capacitor, again
with the shortest leads possible, and before it is connected to
the PGND pin.
3. The positive terminal of the input capacitors must be connected to the drain of the high side MOSFET. The source
terminal of this FET is connected to the drain of the low side
FET, (whose source is connected to the ground plane direct)
with the widest and shortest traces possible. To kill parasitic
ringing at the input of the buck inductor due to parasitic
capacitances and inductances, a small (L > 3 mm) ferrite
bead is recommended to be placed in the drain lead of the
low side FET. Also, to minimize dissipation of the high side
FET, a low voltage 1 A Schottky diode can be connected
between the input of the buck inductor and the source of the
low side FET.
4. The positive terminal of the bypass capacitors of the +12 V
supply must be connected to the V
pin of the ADP3153
IN
with the shortest leads possible. The negative terminals must
be connected to the PGND pin of the ADP3153.
5. The sense pins of the ADP3153 must be connected to the
sense resistor with as short traces as possible. Make sure that
the two sense traces are routed together with minimum separation (<1 mm). The output side of the sense resistor should
be connected to the V
wide PCB traces as possible to reduce the V
pin(s) of the CPU with as short and
CC
voltage drop.
CC
(Each square unit of 1 ounce Cu-trace has a resistance of
~0.53 mΩ. At 14 A, each mΩ of PCB trace resistance be-
tween current sense resistor output and V
terminal(s) of
CC
the CPU will reduce the regulated output voltage by 14 mV.
The filter capacitors to ground at the sense terminals of the
IC should be as close as possible (<8 mm) to the ADP3153.
The common ground of the optional filter capacitors should
be connected to the AGND pin of the ADP3153 with the
shortest traces possible (<10 mm).
6. The microprocessor load should be connected to the output
terminals of the converter with the widest and shortest traces
possible. Use overlapping traces in different layers to minimize interconnection inductance.
–11–REV. 0
Page 12
ADP3153
OUTLINE DIMENSIONS
Dimensions shown in inches and (mm).
20-Lead Thin Shrink Small Outline (TSSOP)
(RU-20)
0.260 (6.60)
0.252 (6.40)
0.177 (4.50)
0.169 (4.30)
0.006 (0.15)
0.002 (0.05)
SEATING
PLANE
20
1
PIN 1
0.0256 (0.65)
BSC
11
10
0.0433 (1.10)
MAX
0.0118 (0.30)
0.0075 (0.19)
0.256 (6.50)
0.246 (6.25)
0.0079 (0.20)
0.0035 (0.090)
C3346–3–7/98
88
08
0.028 (0.70)
0.020 (0.50)
–12–
PRINTED IN U.S.A.
REV. 0
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