Datasheet ADP3153 Datasheet (Analog Devices)

Page 1
a
5-Bit Programmable Dual
Power Supply Controller
®
for Pentium
II Processor
ADP3153
FEATURES 5-Bit Digitally Programmable 1.8 V to 3.5 V Output
Voltage Dual N-Channel Synchronous Driver Total Output Accuracy 1% (0C to +70C) High Efficiency Current-Mode Operation Short Circuit Protection Power Good Output Overvoltage Protection Crowbar On-Board Linear Regulator Controller VRM 8.2 Compatible Narrow Body TSSOP 20-Lead Package
APPLICATIONS Desktop PC Power Supply for:
Pentium II Processor
Deschutes Processor
Pentium Pro Processor
Pentium Processor
AMD–K6 Processor VRM Modules
GENERAL DESCRIPTION
The ADP3153 is a highly efficient synchronous switching regu­lator controller and a linear regulator controller. The switching regulator controller is optimized for Pentium II and Deschutes Processor applications where 5 V is stepped down to a digitally controlled output voltage between 1.8 V and 3.5 V. Using a 5-bit DAC to read a voltage identification (VID) code directly from the processor, the ADP3153 uses a current mode constant off­time architecture to generate its precise output voltage.
The ADP3153 drives two N-channel MOSFETS in a synchro­nous rectified buck converter, at a maximum switching fre­quency of 250 kHz. Using the recommended loop compensation and guidelines, the ADP3153 provides a dc/dc converter that meets Intel’s stringent transient specifications with a minimum number of output capacitors and smallest footprint. Addition­ally, the current mode architecture also provides guaranteed short circuit protection and adjustable current limiting.
The ADP3153’s linear regulator controller drives an external N-channel device. The output voltage is set by the ratio of the external feedback resistors. The controller has been designed for excellent load transient response.
V
CC
+12V
V
+5V
IN
22mF
C
COMP
150pF
1mF
SD
CMP
ADP3153
VLDO
FB C
T
AGND
VID0–VID4
5-BIT CODE
V
+3.3V
R1
V
IN
+5V
O2
1A
IRL2703
1000mF
R2
35kV
20kV
Figure 1. Typical Application
Pentium is a registered trademark of Intel Corporation. All other trademarks are the property of their respective holders.
REV. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
+
C
V
CC
DRIVE1
IRL3103
SENSE+
SENSE–
DRIVE2
PGND
1nF
IRL3103
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 World Wide Web Site: http://www.analog.com Fax: 781/326-8703 © Analog Devices, Inc., 1998
IN
L
2.5mH
10BQ015
R
SENSE
7mV
V
O
1.8V–3.5V
+
14A
C
O
Page 2
ADP3153–SPECIFICATIONS
(0C TA +70C, V
= 12 V, VIN = 5 V, unless otherwise noted)
CC
Parameter Symbol Conditions Min Typ Max Units
OUTPUT ACCURACY
1.8 V Output Voltage V
O
With Respect to Nominal –1.0 1.0 %
2.8 V Output Voltage Output Voltage (Figure 1) –1.0 1.0 %
3.5 V Output Voltage –1.0 1.0 %
I
OUTPUT VOLTAGE LINE ∆V
O
= 10 A (Figure 2)
LOAD
REGULATION VIN = 4.75 V to 5.25 V 0.05 %
OUTPUT VOLTAGE LOAD ∆V
O
REGULATION 200 mA < I
INPUT DC SUPPLY CURRENT
Normal Mode I
1
Q
Shutdown T
(Figure 2)
< 14 A 0.1 %
LOAD
VSD = 0.8 V 4.1 5.5 mA
= +25°C, VSD = 2.0 V 140 250 µA
A
CURRENT SENSE THRESHOLD
VOLTAGE V11–V
VID PINS THRESHOLD V
, V1–V
20
V
4
Forced to V
10
10
– 3% 125 145 165 mV
OUT
Low 0.6 V High 2.0 V
VID PINS INPUT CURRENT I20, I1–I
VID0–VID4 PULL-UP RESISTANCE R
PIN DISCHARGE CURRENT I
C
T
OFFTIME t
DRIVER OUTPUT TRANSITION t
VID
12
OFF
, t
R
F
TIMES T
POSITIVE POWER GOOD TRIP POINT V
NEGATIVE POWER GOOD TRIP POINT V
POWER GOOD RESPONSE TIME t
CROWBAR TRIP POINT V
PWRGD
PWRGD
PWRGD
CROWBAR
VID
4
= 0 V 110 220 µA
20 30 k
T
= +25°C
A
V
in Regulation 65 µA
OUT
V
= 0 V 2 10 µA
OUT
C
= 150 pF 1.8 2.45 3.2 µs
T
CL = 7000 pF (Pins 16, 17)
= +25°C 120 200 ns
A
% Above Output Voltage 5 8 %
% Below Output Voltage –8 –5 %
500 µs
% Above Output Voltage 9 15 24 %
ERROR AMPLIFIER OUTPUT
IMPEDANCE RO
ERR
145 k
ERROR AMPLIFIER
TRANSCONDUCTANCE GM
ERR
2.2 mmho
ERROR AMPLIFIER MINIMUM
OUTPUT VOLTAGE V
CMPMIN
V10 Forced to V
+ 3% 0.8 V
OUT
ERROR AMPLIFIER MAXIMUM
OUTPUT VOLTAGE V
CMPMAX
ERROR AMPLIFIER BANDWIDTH –3 dB BW
ERR
V10 Forced to V
– 3% 2.4 V
OUT
CMP = Open 500 kHz
LINEAR REGULATOR FEEDBACK
CURRENT I
LINEAR REGULATOR OUTPUT Figure 2
VOLTAGE
2
FB
V
O2
R
= 35K, R3 = 20K, IO2 = 1 A 3.24 3.30 3.38 V
PROG
0.35 1 µA
SHUTDOWN (SD) PIN
Low Threshold SD High Threshold SD Input Current SD
NOTES
1
Dynamic supply current is higher due to the gate charge being delivered to the external MOSFETS.
2
The LDO is tested in a V be set.
All limits at temperature extremes are guaranteed via correlation using standard quality control methods. Specifications are subject to change without notice.
= 3.3 V configuration with the circuit shown in Figure 2. By selecting a different R
OUT
L
H
IB
Part Active 0.6 V Part in Shutdown 2.0 V
10 µA
value, any output voltage above 1.20 V can
PROG
–2– REV. 0
Page 3
ADP3153
PIN FUNCTION DESCRIPTIONS
Pin Mnemonic Function
1–4, 20 VID1–VID4, Voltage Identification DAC Input Pins. These pins are internally pulled up to V
VID0 logic high if left open. The DAC output range is 600 mV to 1.167 V. Leaving all five DAC
inputs open results in placing the ADP3153 into shutdown. 5 AGND Analog Ground Pin. This pin must be routed separately to the (–) terminal of C 6 SD Shutdown Pin. A logic high will place the ADP3153 in shutdown and disable both outputs. This
pin is internally pulled down. 7 FB This pin is the feedback connection for the linear controller. Connect this pin to the resistor
divider network to set the output voltage of the linear regulator. 8, 18 NC No Connect. 9 VLDO Gate Drive for the Linear Regulator N-channel MOSFET. 10 SENSE– Connects to the internal resistor divider which along with the VID code, sets the output voltage.
Pin 10 is also the (–) input for the current comparator. 11 SENSE+ The (+) input for the current comparator. A threshold between Pins 10 and 11 set by the error
12 C
amplifier in conjunction with R
T
External Capacitor CT from Pin 12 to ground sets the off time of the device.
, sets the current trip point.
SENSE
13 CMP Error Amplifier Compensation Point. The current comparator threshold increases with the Pin
13 voltage.
14 PWRGD Power Good Pin. An open drain signal to indicate that the output voltage is within a ±5% regu-
lation band. 15 V
CC
Input Voltage Pin. 16 DRIVE2 Gate Drive for the Synchronous Rectifier N-channel MOSFET. The voltage at Pin 16 swings
from ground to V
CC
.
17 DRIVE1 Gate Drive for the buck switch N-channel MOSFET. The voltage at Pin 17 swings from ground
to V
.
CC
19 PGND Driver Power Ground. Connects to the source of the bottom N-channel MOSFET onto the (–)
terminal of CIN.
providing a
REG
.
OUT
ABSOLUTE MAXIMUM RATINGS*
Input Supply Voltage (Pin 15) . . . . . . . . . . . . –0.3 V to +16 V
Shutdown Input Voltage . . . . . . . . . . . . . . . . –0.3 V to +16 V
20-Lead Thin Shrink Small Outline (TSSOP)
PIN CONFIGURATION
(RU-20)
Power Dissipation . . . . . . . . . . . . . . . . . . . .Internally Limited
Operating Temperature Range . . . . . . . . . . . . . 0°C to +70°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . 150°C
␣ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110°C/W
θ
JA
Storage Temperature Range . . . . . . . . . . . . –65°C to +150°C
Lead Temperature Range (Soldering 10 sec) . . . . . . . .+300°C
*This is a stress rating only; operation beyond these limits can cause the device to
be permanently damaged.
ORDERING GUIDE
Temperature Package Package
Model Range Description Option
VID1 VID2 VID3 VID4
AGND
SD FB NC
VLDO
SENSE–
1
2
3
4
5
ADP3153
TOP VIEW
6
(Not to Scale)
7
8
9
10
NC = NO CONNECT
ADP3153ARU 0°C to +70°C Thin Shrink Small RU-20
Outline (TSSOP)
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the ADP3153 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
VID0
20
19
PGND
18
NC
17
DRIVE 1
16
DRIVE 2
15
V
CC
14
PWRGD
13
CMP
12
C
T
11
SENSE+
WARNING!
ESD SENSITIVE DEVICE
–3–REV. 0
Page 4
ADP3153
SYSTEM
V
+3.3V
1A
RTN
100kV
mP
1000mF
IRL2703
R
PROG
35kV R3
20kV
1
O2
2
ADP3153
1
VID1
2
VID2
3
VID3
4
VID4
5
AGND
6
SD
7
FB
8
NC
9
VLDO
10
SENSE–
NC = NO CONNECT
VID0
PGND
NC DRIVE1 DRIVE2
V
PWRGD
CMP
SENSE+
20
19
18
17
16
15
CC
14
13
C
12
T
11
150pF
1nF
22mF
R1 150kV
R2 39kV
C
T
220V
220V
2nF C
1mF
COMP
22V
IRL3103
IRL3103
2700mF 33
(10V)
L1
2.5mH
10BQ015
R
SENSE
6.7mV
1mF
2700mF 3 6
L2
1.7mH
(10V)
VIN +12V
VCC +5V +5V RTN
+12V RTN
V
O
1.8V–3.5V 0-14A
RTN
Figure 2. Typical VRM8.2 Compliant Core DC/DC Converter Circuit
SD
V
DRIVE1 DRIVE2 PGND
CC
NONOVERLAP
IN
DRIVE
CROWBAR
OFF
6
AGND PWRGD
5
V
+15%
REF
V
REF
+5%
CMPI
S
Q
R
V
T2
CMPT
OFF-TIME
CONTROL
12
C
T
V
IN
SENSE–
1415
V
V
13
CMP
DELAY
REF
T1
SENSE+
–5%
g
m
SENSE–
10
11
ADP3153
REFERENCE
9
1
2
3
4
VLDO
FB
VID0
VID1
VID2
VID3
VID4
2R
1.20V
V
REF
R
DAC
Figure 3. Functional Block Diagram
–4– REV. 0
Page 5
Typical Performance Characteristics–ADP3153
OPERATING FREQUENCY – kHz
45 397
58 83 134
GATE CHARGE CURRENT – mA
45
40
0
20 15 10
5
35
25
30
Qn + Qn = 100nC
10ms/DIV
OUTPUT CURRENT 14A TO 1A
OUTPUT VOLTAGE 20mV/DIV
OUTPUT ACCURACY – %
NUMBER OF PARTS
15
0
–0.55
–0.5
–0.45
25
20
10
5
–0.4
–0.35
–0.3
–0.25
–0.2
–0.15
–0.1
–0.05
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
TA = +258C SEE FIGURE 13
100
95
90
85
V
= +2.0V
OUT
80
EFFICIENCY – %
75
70
65
4.2 5.6 7.0 9.8 11.2 12.68.4
1.4 2.8 14.0 OUTPUT CURRENT – Amps
V
OUT
V
OUT
SEE FIGURE 2
= +3.5V
= +2.8V
Figure 4. Efficiency vs. Output Current
V
= +3.5V, I
OUT
PRIMARY
N-DRIVE
1
2
DRIVER OUTPUT
SECONDARY
N-DRIVE
DRIVER OUTPUT
SEE FIGURE 2
= 10A
OUT
450 400 350
300 250 200 150
FREQUENCY – kHz
100
50
0
50 100 800
200 300 400 500 600 700 TIMING CAPACITOR – pF
Figure 5. Frequency vs. Timing Capacitor
SEE FIGURE 2
VCC = +12V V
= +5V
IN
= +3.5V
V
OUT
I
= 10A
OUT
Figure 6. Gate Charge vs. Supply Current
DRIVE 1 AND 2 = 5V/DIV
Figure 7. Gate Switching Waveforms
OUTPUT VOLTAGE 20mV/DIV
OUTPUT CURRENT 1A TO 14A
10ms/DIV
Figure 10. Transient Response, 1A–14 A of Figure 2 Circuit
500ns/DIV
Figure 8. Driver Transition Waveforms
100ns/DIV
Figure 9. Transient Response, 14 A–1A of Figure 2 Circuit
VCC VOLTAGE
5V/DIV
3
REGULATOR
OUTPUT VOLTAGE
1V/DIV
4
10ms/DIV
Figure 11. Power-On Start-Up
Figure 12. Output Accuracy Distribution
Waveforms
–5–REV. 0
Page 6
ADP3153
12V
V
DRIVE1
DRIVE2 SENSE+ SENSE–
PGND
0.1mF
CC
1mF
0.1mF
V
OUT
5-BIT
CODE
1kV
4700pF
1.2V
100kV
VID0– VID4
SD
CMP
C
T
AGND
ADP3153
OP27
Figure 13. Closed-Loop Test Circuit for Accuracy
APPLICATION INFORMATION
The ADP3153 uses a current-mode, constant-off-time control technique to switch a pair of external N-channel MOSFETs in a synchronous rectified buck converter application. Due to the constant-off-time operation, no slope compensation is needed. A unique feature of the constant-off-time control technique is that the converter’s frequency becomes a function of the ratio of input voltage to output voltage. The off time is determined by the value of the external capacitor connected to the C
pin.
T
The on time varies in such a way that a regulated output volt­age is maintained.
The output voltage is sensed by an internal voltage divider that is connected to the SENSE– pin. A voltage-error amplifier g
m
compares the values of the divided output voltage with a refer­ence voltage. The reference voltage is set by an on-board 5-bit DAC, which reads the code present at the voltage identification (VID) pins and converts it to a precise value between 600 mV and 1.167 V. Refer to Table I for the output voltage vs. VID pin code information.
During continuous-inductor-current mode of operation, the voltage-error amplifier g
and the current comparator CMPI
m
are the main control elements. During the on time of the high side MOSFET, the current comparator CMPI monitors the voltage between the SENSE+ and SENSE– pins. When the voltage level between the two pins reaches the threshold level
, the high side drive output is switched to zero, which turns
V
T1
off the high side MOSFET. The timing capacitor C
is now
T
discharged at a rate determined by the off time controller. In order to maintain a ripple current in the inductor, which is independent of the output voltage, the discharge current is made proportional to the value of the output voltage (mea­sured at the SENSE– pin). While the timing capacitor is dis­charging, the low side drive output goes high, turning on the low side MOSFET. When the voltage level on the timing ca­pacitor has discharged to the threshold voltage level V
T2
, comparator CMPT resets the SR flip-flop. The output of the flip-flop forces the low side drive output to go low and the high side drive output to go high. As a result, the low side switch is turned off and the high side switch is turned on. The sequence is then repeated. As the load current increases, the output voltage starts to decrease. This causes an increase in the output of the voltage-error amplifier, which, in turn, leads to an increase in the current comparator threshold V
thus tracking the load
T1,
current.
–6– REV. 0
Table I. Output Voltage vs. VID Code
VID4 VID3 VID2 VID1 VID0 VOUT
0 1 1 1 1 1.80 0 1 1 1 0 1.80 0 1 1 0 1 1.80 0 1 1 0 0 1.80 0 1 0 1 1 1.80 0 1 0 1 0 1.80 0 1 0 0 1 1.80 0 1 0 0 0 1.80 0 0 1 1 1 1.80 0 0 1 1 0 1.80 0 0 1 0 1 1.80 0 0 1 0 0 1.85 0 0 0 1 1 1.90 0 0 0 1 0 1.95 0 0 0 0 1 2.00 0 0 0 0 0 2.05 1 1 1 1 1 Shutdown 1 1 1 1 0 2.10 1 1 1 0 1 2.20 1 1 1 0 0 2.30 1 1 0 1 1 2.40 1 1 0 1 0 2.50 1 1 0 0 1 2.60 1 1 0 0 0 2.70 1 0 1 1 1 2.80 1 0 1 1 0 2.90 1 0 1 0 1 3.00 1 0 1 0 0 3.10 1 0 0 1 1 3.20 1 0 0 1 0 3.30 1 0 0 0 1 3.40 1 0 0 0 0 3.50
To prevent cross conduction of the external MOSFETs, feed­back is incorporated to sense the state of the driver output pins. Before the low side drive output can go high, the high side drive output must be low. Likewise, the high side drive output is unable to go high while the low side drive output is high.
Power Good
The ADP3153 has an internal monitor which monitors the output voltage and drives the PWRGD pin of the device. This pin is an open drain output whose high level (when connected to a pull-up resistor) indicates that the output voltage has been
within a ±5% regulation band of the targeted value for more than 500 µs. The PWRGD pin will go low if the output is out­side the regulation band for more than 500 µs.
Output Crowbar
An added feature of using an N-channel MOSFET as the syn­chronous switch is the ability to crowbar the output with the same MOSFET. If the output voltage is 15% greater than the desired regulated value, the ADP3153 will turn on the lower MOSFET, which will current-limit the source power supply or blow its fuse, pull down the output voltage, and thus save the expensive microprocessor from destruction. The crowbar func­tion releases at approximately 50% of the nominal output volt­age. For example, if the output is programmed to 2.0 V, but is pulled up to 2.3 V or above, the crowbar will turn on the lower MOSFET. If in this case the output is pulled down to less than
Page 7
ADP3153
1.0 V, the crowbar will release, allowing the output voltage to recover to 2.0 V.
Shutdown
The ADP3153 has a shutdown pin which is pulled logic low by an internal resistor. In this condition the device functions nor­mally. This pin should be pulled high externally to disable the output drives.
Calculation of Component Values
The design parameters for a typical 300 MHz Pentium II appli­cation (Figure 2) are as follows:
Input voltage: V Auxiliary input: V Output voltage: V
= 5 V
IN
CC
= 2.8 V
O
= 12 V
Maximum output current:
I
= 14.2 Adc
OMAX
Minimum output current:
I
= 0.8 Adc
OMIN
Static tolerance of the supply voltage for the processor core:
V
= 100 mV
OST+
= –60 mV
V
OST–
Transient tolerance (for less than 2 µs) of the supply voltage for
the processor core when the load changes between the minimum
and maximum values with a di/dt of 30 A/µs:
V
= 130 mV
OTR+
= –130 mV
V
OTR–
Input current di/dt when the load changes between the mini-
mum and maximum values: less than 0.1 A/µs
The above requirements correspond to Intel’s published power supply requirements based on VRM 8.2 guidelines.
CT Selection for Operating Frequency
The ADP3153 uses a constant-off-time architecture with t
OFF
determined by an external timing capacitor CT. Each time the high side N-channel MOSFET switch turns on, the voltage across C C
T
is reset to approximately 3.3 V. During the off time,
T
is discharged by a constant current of 65 µA to 2.3 V, that is
by 1 V. The value of the off time is calculated from the pre­ferred continuous-mode operating frequency. Assuming a nomi­nal operating frequency of f
= 2.8 V, the corresponding off time is:
of V
O
t
= 1–
OFF
 
= 200 kHz at an output voltage
NOM
1
V
O
V
IN
f
=2. 2 µs
NOM
The timing capacitor can be calculated from the equation:
t
×65 µA
OFF
C
=
T
1V
=143 pF
The converter operates at the nominal operating frequency only at the above specified V
and at light load. At higher VO, and
O
heavy load, the operating frequency decreases due to the para­sitic voltage drops across the power devices. The actual mini­mum frequency at V
= 2.8 V is calculated to be 160 kHz (see
O
Equation 1 below), where:
I
IN
R
IN
is the input dc current (assuming an efficiency of 90%, I
= 9 A)
IN
is the resistance of the input filter (estimated
value: 7 mΩ)
R
DS(ON)HSF
is the resistance of the high side MOSFET
(estimated value: 10 mΩ)
R
DS(ON)LSF
is the resistance of the low side MOSFET
(estimated value: 10 mΩ)
R
SENSE
is the resistance of the sense resistor
(estimated value: 7 mΩ)
R
L
is the resistance of the inductor (estimated
value: 6 mΩ)
CO Selection—Determining the ESR
The selection of the output capacitor is driven by the required ESR and capacitance C
. The ESR must be small enough that
O
both the resistive voltage deviation due to a step change in the load current and the output ripple voltage stay below the values defined in the specification of the supplied microprocessor. The capacitance, C
, must be large enough that the output is held
O
up while the inductor current ramps up or down to the value corresponding to the new load current.
The total static tolerance of the Pentium II processor is 160 mV.
Taking into account the ±1% setpoint accuracy of the ADP3153,
and assuming a 0.5% (or 14 mV) peak-to-peak ripple, the al­lowed static voltage deviation of the output voltage when the load changes between the minimum and maximum values is
0.08 V. Assuming a step change of I = I
OMAX–IOMIN
= 13.4 A, and allocating all of the total allowed static deviation to the contribution of the ESR sets the following limit:
R
E MAX
= ESR
()
MAX1
=
0.08
13.4
= 5. 9 m
The output filter capacitor must have an ESR of less than
5.9 m. One can use, for example, six FA type capacitors from Panasonic, with 2700 µF capacitance, 10 V voltage rating, and 34 m ESR. The six capacitors have a total typical ESR of ~ 5 m when connected in parallel.
Inductor Selection
The minimum inductor value can be calculated from ESR, off time, dc output voltage and allowed peak-to-peak ripple voltage.
L
MIN1
V
OtOFFRE( MAX )
=
V
RIPPLE , pp
2.8 × 2.2 µ×5. 9 m
=
14 m
= 2. 6 µH
The minimum inductance gives a peak-to-peak ripple current of
2.15 A, or 15% of the maximum dc output current I
OMAX
.
MIN
1
=
t
OFF
f
V
– IINRIN– I
IN
×
VIN– IINRIN– I
OMAX(RDS(ON)HSF+RSENSE+RL
OMAX(RDS(ON)HSF+RSENSE+RL
R
)–V
O
DS(ON)LSF
=160 kHz
)
(1)
–7–REV. 0
Page 8
ADP3153
The inductor peak current in normal operation is:
I
LPEAK
= I
OMAX
+ I
/2 = 15.3 A
RPP
The inductor valley current is:
I
LVALLEY
= I
LPEAK
– I
RPP
= 13 A
The inductor for this application should have an inductance
of 2.6 µH at full load current and should not saturate at the
worst-case overload or short circuit current at the maximum specified ambient temperature. A suitable inductor is the
CTX12-13855 from Coiltronics, which is 4.4 µH at 1 A and about 2.5 µH at 14.2 A.
Tips for Selecting Inductor Core
Ferrite designs have very low core loss, so the design should focus on copper loss and on preventing saturation. Molypermalloy, or MPP, is a low loss core material for toroids, and it yields the smallest size inductor, but MPP cores are more expensive than
cores or the Kool Mµ® cores from Magnetics, Inc. The lowest
cost core is made of powdered iron, for example the #52 material from Micrometals, Inc., but yields the largest size inductor.
CO Selection—Determining the Capacitance
The minimum capacitance of the output capacitor is determined from the requirement that the output be held up while the in­ductor current ramps up (or down) to the new value. The mini­mum capacitance should produce an initial dv/dt which is equal (but opposite in sign) to the dv/dt obtained by multiplying the dt in the inductor and the ESR of the capacitor.
I
– I
C
MIN
OMAX
=
RE(di /dt )
OMIN
14.2–0.8
=
5. 9 m (2.2 / 4.4 µH )
= 4.5 mF
In the above equation the value of di/dt is calculated as the smaller voltage across the inductor (i.e., V
– VO rather than VO)
IN
divided by the maximum inductance (4.4 µH) of the CTX12-
13855 inductor from Coiltronics. The parallel-connected six
2700 µF/10 V FA series capacitors from Panasonic have a total capacitance of 16,200 µF, so the minimum capacitance is met
with ample margin.
R
SENSE
The value of R
is based on the required output current.
SENSE
The current comparator of the ADP3153 has a threshold range that extends from 0 mV to 125 mV (minimum). Note that the full 125 mV range cannot be used for the maximum specified nominal current, as headroom is needed for current ripple, tran­sients and inductor core saturation.
The current comparator threshold sets the peak of the inductor current yielding a maximum output current I
which equals
OMAX,
the peak value less half of the peak-to-peak ripple current. Solv­ing for R
and allowing a margin for tolerances inside the
SENSE
ADP3153 and in the external component values yields:
R
= (125 mV)/[1.2(I
SENSE
OMAX
+ I
/2)] = 6.8 m
RPP
A practical solution is to use three 20 m resistors in parallel, with an effective resistance of about 6.7 mΩ.
Once R
I
SC(PK)
I
SC(PK)
has been chosen, the peak short-circuit current
SENSE
can be predicted from the following equation:
= (145 mV)/R
= (145 mV)/(6.7 mΩ) = 21.5 A
SENSE
The actual short-circuit current is less than the above calculated I
value because the off time rapidly increases when the
SC(PK)
output voltage drops below 1 V. The relationship between the off time and the output voltage is:
C
×1V
360 k
T
V
O
+2 µA
t
OFF
With a short across the output, the off time will be about
70 µs. During that off time the inductor current gradually de-
cays. The amount of decay depends on the L/R time constant in
the output circuit. With an inductance of 2.5 µH and total resis- tance of 23 m, the time constant will be 108 µs, which yields a
valley current of 11.3 A and an average short-circuit current of about 16.3 A. To safely carry the short-circuit current, the sense resistor must have a power rating of at least 16.3 A
2
× 6.8 m =
1.8 W.
Current Transformer Option
An alternative to using low value and high power current sense resistor is to reduce the sensed current by using a low cost cur­rent transformer and a diode. The current can then be sensed with a small-size, low cost SMT resistor. If we use a transformer with one primary and 50 secondary turns, the worst-case resistor dissipation is reduced to a fraction of a mW. Another advantage of using this option is the separation of the current and voltage sensing, which makes the voltage sensing more accurate.
Power MOSFET
Two external N-channel power MOSFETs must be selected for use with the ADP3153, one for the main switch, and an identi­cal one for the synchronous switch. The main selection param­eters for the power MOSFETs are the threshold voltage V and the on resistance R
DS(ON)
.
GS(TH)
The minimum input voltage dictates whether standard threshold or logic-level threshold MOSFETs must be used. For V standard threshold MOSFETs (V
is expected to drop below 8 V, logic-level threshold MOSFETs
V
IN
(V MOSFETs with V of V
The maximum output current I
< 2.5 V) are strongly recommended. Only logic-level
GS(TH)
should be used.
CC
ratings higher than the absolute maximum
GS
OMAX
< 4 V) may be used. If
GS(TH)
determines the R
> 8 V,
IN
DS(ON)
requirement for the two power MOSFETs. When the ADP3153 is operating in continuous mode, the simplifying assumption can be made that one of the two MOSFETs is always conducting the average load current.
For V
= 5 V and VO = 2.8 V, the maximum duty ratio of the
IN
high side FET is:
D
MAXHF
= (1 – f
MIN
× t
) =(1 – 160 kHz
OFF
× 2.2 µs) = 65%
The maximum duty ratio of the low side (synchronous rectifier) FET is:
D
MAXLF
= 1 – D
MAXHF
= 35%
The maximum rms current of the high side FET is:
I
RMSLS
= [D
MAXHF (ILVALLEY2
+ I
LPEAK
2
+ I
LVALLEYILPEAK
)/3]
0.5
= 11.5 Arms
–8– REV. 0
Page 9
ADP3153
The maximum rms current of the low side FET is:
I
RMSLS
= [D
MAXLF (ILVALLEY2
+ I
LPEAK
2
+ I
LVALLEYILPEAK
)/3]
0.5
= 8.41 Arms
The R
for each FET can be derived from the allowable
DS(ON)
dissipation. If we allow 5% of the maximum output power for FET dissipation, the total dissipation will be:
P
FETALL
= 0.05 VOI
OMAX
= 2 W
Allocating two-thirds of the total dissipation for the high side FET and one-third for the low side FET, the required minimum FET resistances will be:
R
DS(ON)HSF(MIN)
R
DS(ON)LSF(MIN)
= 1.33/11.52 = 10 m
= 0.67/8.412 = 9.5 m
Note that there is a tradeoff between converter efficiency and cost. Larger FETs reduce the conduction losses and allow higher efficiency but lead to increased cost. If efficiency is not a major concern the Fairchild MOSFET NDP6030L or International Rectifier IRL3103 is an economical choice for both the high side and low side positions. Those devices have an R
= 10 V and at 25°C. The low side FET is turned on with
at V
GS
DS(ON)
of 14 m
at least 10 V. The high side FET, however, is turned on with only 12 V – 5 V = 7 V. If we check the typical output character­istics of the device in the data sheet, we find that for an output current of 10 A, and at a V gives a R
DS(ON)
= VDS/I
above the one specified at a V
of 7 V, the VDS is 0.15 V, which
GS
= 15 m. This value is only slightly
D
of 10 V, so the resistance in-
GS
crease due to the reduced gate drive can be neglected. We have to modify, however, the specified R
est FET junction temperature of 140°C by a R
at the expected high-
DS(ON)
DS(ON)
multiplier,
using the graph in the data sheet. In our case:
R
DS(ON)MULT
Using this multiplier, the expected R
= 1.7
at 140°C is 1.7 × 14
DS(ON)
= 24 mΩ.
The high side FET dissipation is:
P
DFETHS
= I
RMSHS
2
R
DS(ON)
+ 0.5 VINI
LPEAKQGfMAX/IG
= 3.72 W
where the second term represents the turn-off loss of the FET. (In the second term, Q the gate for turn-off and I sheet, Q
is about 50 nC – 70 nC and the gate drive current
G
is the gate charge to be removed from
G
is the gate current. From the data
G
provided by the ADP3153 is about 1 A.)
The low side FET dissipation is:
P
DFETLS
= I
RMSLS
2
R
DS(ON)
= 1.7 W
(Note that there are no switching losses in the low side FET.)
To remove the dissipation of the chosen FETs, proper heatsinks should be used. The Thermalloy 6030 heatsink has a thermal
impedance of 13°C/W with convection cooling. With this heat-
sink, the junction-to-ambient thermal impedance of the chosen
high side FET θ
will be 13 (heatsink-to-ambient) + 2 (junction-
JAHS
to-case) + 0.5 (case-to-heatsink) = 15.5°C/W. At full load and at 50°C ambient temperature, the junction
temperature of the high side FET is:
T
JHSMAX
= TA +
θ
JAHS PDFETHS
= 105°C
A smaller heatsink may be used for the low side FET, e.g., the
Thermalloy type 7141 (θ = 20.3°C/W). With this heatsink, the
T
JLSMAX
= TA +
θ
JALS PDFETLS
= 106°C
All of the above calculated junction temperatures are safely
below the 175°C maximum specified junction temperature of
the selected FET.
The maximum operating junction temperature of the ADP3153 is calculated as follows:
T
where θ
is the junction to ambient thermal impedance of the
JA
ADP3153 and P
is equal to 110°C/W and I
= TA +
JICMAX
is the drive power. From the data sheet, θ
DR
θ
JA (IICVCC
= 2.7 mA. PDR can be calculated as
IC
+ PDR)
JA
follows:
P
DR
= (C
RSS
+ C
ISS)VCC
2
f
MAX
= 307 mW
The result is:
T
= 86°C
JICMAX
CIN Selection and Input Current di/dt Reduction
In continuous-inductor-current mode, the source current of the high side MOSFET is a square wave with a duty ratio of V
. To keep the input ripple voltage at a low value, one or
V
IN
/
O
more capacitors with low equivalent series resistance (ESR) and adequate ripple-current rating must be connected across the input terminals. The maximum rms current of the input bypass capacitors is:
I
CINRMS
[V
O(VIN
VO)]
0.5
I
OMAX
/V
= 7 Arms
IN
Let us select the FA-type capacitor with 2700 µF capacitance and 10 V voltage rating. The ESR of that capacitor is 34 m and the allowed ripple current at 100 kHz is 1.94 A. At 105°C
we would need to connect at least four such capacitors in paral-
lel to handle the calculated ripple current. At 50°C ambient,
however, the ripple current can be increased, so three capacitors in parallel are adequate.
The ripple voltage across the three paralleled capacitors is:
V
CINRPL
= I
[ESRIN/3 + D
OMAX
MAXHF
/(3C
)] ⬇ 140 mV p-p
IN fMIN
To further reduce the effect of the ripple voltage on the system supply voltage bus and to reduce the input-current di/dt to
below the recommended maximum of 0.1 A/µs, an additional small inductor (L > 1.7 µH @ 10 A) should be inserted between
the converter and the supply bus (see Figure 2).
Feedback Loop Compensation Design
To keep the peak-to-peak output voltage deviation as small as possible, the low frequency output impedance (i.e., the output resistance) of the converter should be made equal to the ESR of the output capacitor. That can be achieved by having a single-pole roll-off of the voltage gain of the g
error amplifier, where the pole
m
frequency coincides with the ESR zero of the output capacitor. A gain with single-pole roll-off requires that the g
amplifier is termi-
m
nated by the parallel combination of a resistor and capacitor. The required resistor value can be calculated from the equation:
36 × R
where g
SENSE
g
145 kΩR
()
m
= 2.2 ms and the quantities 36 and 145 k are charac-
m
COMP
= R
E
teristic of the ADP3153. The calculated compensating resis­tance is:
R1R2 = R
COMP
= 31 k
–9–REV. 0
Page 10
ADP3153
TT VI
C
FETMAX AMB A IN O MAX
=+×× ×=
+×× ×= °
θ
J 2
11
50 40 5 0 5 1 1 160
.
..
R
S2
1.1V 470pF
2N2222
VIN = +5V
IRX3803
2kV
1000mF/10V
VO2 = 3.3V
I
O2
= 0.5A
VLDO
ADP3153
FB
20kV
R
PROG
35kV
The compensating capacitance is determined from the equality of the pole frequency of the error amplifier gain and the zero frequency of the impedance of the output capacitor.
C
RC
E OUT
==×=
COMP
R
COMP
mmF
5162
k
31
nF
26..
In the application circuit we tested, we found that the compen­sation scheme shown in Figure 2 gave the optimal response to meet the Pentium II dc/dc static and transient specifications with sufficient margins including the ADP3153’s initial error tolerance, the PCB layout trace resistances, and the external component parasitics. If we increase the load resistance to the COMP pin, the static regulation will improve. The load transient response, however, will get worse. In Figure 2, if we decrease the
R1 = 150 k resistor vs. the R2 = 39 k resistor, the regulation
band will shift positive in relation to the 2.8 V. If we increase the R1 resistor, the regulation band will shift negative. It may be necessary to adjust these resistor values to obtain the best static and dynamic regulation compliance depending on the output capacitor ESR and the parasitic trace resistances of the PCB layout. A detailed design procedure and published conference papers on the optimal compensation are available on ADI’s website (http://www.analog.com).
ADP3153 Linear Regulator
The ADP3153 linear regulator provides a low cost, convenient, and versatile solution for generating an additional power supply rail that can be programmed between 1.2 V–5 V. The maximum output load current is determined by the size and thermal imped­ance of an external N-channel power MOSFET that is placed in series with the 5 V supply and controlled by the ADP3153. The output voltage, V
in Figure 14, is sensed at the FB pin of the
O2
ADP3153 and compared to an internal 1.2 V reference in a negative feedback loop which keeps the output voltage in regula­tion. Thus, if the load is being reduced or increased, the FET drive will also be reduced or increased by the ADP3153 to pro-
vide a well regulated ±1% accurate output voltage. This accu-
racy is maintained even if the load changes at the very high rate typical of CPU-type loads. The output voltage is programmed by adjusting the value of the external resistor R
PROG
shown in
Figure 14.
Features
• Typical Efficiency: 66% at 3.3 V Output Voltage
• Tight DC Regulation Due to 1% Reference and High Gain
• Output Voltage Stays Within Specified Limits at Load Cur-
rent Step with 30 A/µs Slope
• Fast Response to Input Voltage or Load Current Transients
The design in Figure 14 is for an output voltage, V
of 3.3 V
O2
with a maximum load current of 0.5 A. Additionally, overcurrent protection is provided by the addition of an external NPN tran­sistor and an external resistor R
. The design specifications and
S2
procedure is given below.
Linear Regulator Design Specifications
Maximum Ambient Temperature . . . . . . . . . . . T
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Output Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . V
Maximum Output Current . . . . . . . . . . . . . . . I
Maximum Output Load Transient Allowed . . V
AMB
O2
O2MAX
= 0.036 V
TR2
= 50°C
= 5 V
IN
= 3.3 V = 0.5 A
Chosen FET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IRX3803
Junction-to-Ambient Thermal Impedance (FET)*
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40°C/W
θ
JA
*Uses 1 inch square PCB cu-foil as heatsink
The output voltage may be programmed by the resistor R
PROG
as follows:
R
PROG
=
12
×=
120
.
V
O
2
33
kkk
.
×=
120 35
ΩΩ
12
.
The current sense resistor may be calculated as follows:
06 06
2
I
2
O MAX
..
05
.
12===
.
R
S
The power rating is:
PR I W
222
S S O MAX
()
11 036=× ×
2
=..
Use a 0.5 resistor.
The maximum FET junction temperature at shorted output is:
which is within the maximum allowed by the FET's data sheet.
The maximum FET junction temperature at nominal output is:
TT VVI
FETMAX AMB A IN O O MAX
50 40 5 3 3 0 5 84
=+×
()
θ
J
×=°
–. .
×=
()
22
C
The output filter capacitor maximum allowed ESR is:
ESR ~ V
TR2/IOMAX
= 0.036/0.5 = 0.072 Ω.
This requirement is met using a 1000 µF/10 V LXV series ca-
pacitor from United Chemicon. For applications requiring higher output current, a heatsink and/or a larger MOSFET should be used to reduce the MOSFET’s junction to ambient thermal impedance.
Figure 14. Linear Regulator with Overcurrent Protection
–10– REV. 0
Page 11
ADP3153
BOARD LAYOUT
A multilayer PCB is recommended with a minimum of two copper layers. One layer on top should be used for traces inter­connecting low power SMT components. The ground terminals of those components should be connected with vias to the bot­tom traces connecting directly to the ADP3153 ground pins. One layer should be a power ground plane. If four layers are possible, one additional layer should be an internal system ground plane, and one additional layer can be used for other system interconnections.
When laying out the printed circuit board, the following check­list should be used to ensure proper operation of the ADP3153.
Board Layout Guidelines
1. The power loop should be routed on the PCB to encompass small areas to minimize radiated switching noise energy to the control circuit and thus to avoid circuit problems caused by noise. This technique also helps to reduce radiated EMI. The power loop includes the input capacitors, the two MOSFETs, the sense resistor, the inductor and the output capacitors. The ground terminals of the input capacitors, the low side FET, the ADP3153 and the output capacitors should be connected together with short and wide traces. It is best to use an internal ground plane.
2. The PGND (power ground) pin of the ADP3153 must re­turn to the grounded terminals of the input and output ca­pacitors and to the source of the low side MOSFET with the shortest and widest traces possible. The AGND (analog ground) pin has to be connected to the ground terminals of the timing capacitor and the compensating capacitor, again with the shortest leads possible, and before it is connected to the PGND pin.
3. The positive terminal of the input capacitors must be con­nected to the drain of the high side MOSFET. The source terminal of this FET is connected to the drain of the low side FET, (whose source is connected to the ground plane direct) with the widest and shortest traces possible. To kill parasitic ringing at the input of the buck inductor due to parasitic capacitances and inductances, a small (L > 3 mm) ferrite bead is recommended to be placed in the drain lead of the low side FET. Also, to minimize dissipation of the high side FET, a low voltage 1 A Schottky diode can be connected between the input of the buck inductor and the source of the low side FET.
4. The positive terminal of the bypass capacitors of the +12 V supply must be connected to the V
pin of the ADP3153
IN
with the shortest leads possible. The negative terminals must be connected to the PGND pin of the ADP3153.
5. The sense pins of the ADP3153 must be connected to the sense resistor with as short traces as possible. Make sure that the two sense traces are routed together with minimum sepa­ration (<1 mm). The output side of the sense resistor should be connected to the V wide PCB traces as possible to reduce the V
pin(s) of the CPU with as short and
CC
voltage drop.
CC
(Each square unit of 1 ounce Cu-trace has a resistance of
~0.53 m. At 14 A, each m of PCB trace resistance be-
tween current sense resistor output and V
terminal(s) of
CC
the CPU will reduce the regulated output voltage by 14 mV. The filter capacitors to ground at the sense terminals of the IC should be as close as possible (<8 mm) to the ADP3153. The common ground of the optional filter capacitors should be connected to the AGND pin of the ADP3153 with the shortest traces possible (<10 mm).
6. The microprocessor load should be connected to the output terminals of the converter with the widest and shortest traces possible. Use overlapping traces in different layers to mini­mize interconnection inductance.
–11–REV. 0
Page 12
ADP3153
OUTLINE DIMENSIONS
Dimensions shown in inches and (mm).
20-Lead Thin Shrink Small Outline (TSSOP)
(RU-20)
0.260 (6.60)
0.252 (6.40)
0.177 (4.50)
0.169 (4.30)
0.006 (0.15)
0.002 (0.05)
SEATING
PLANE
20
1
PIN 1
0.0256 (0.65) BSC
11
10
0.0433 (1.10) MAX
0.0118 (0.30)
0.0075 (0.19)
0.256 (6.50)
0.246 (6.25)
0.0079 (0.20)
0.0035 (0.090)
C3346–3–7/98
88 08
0.028 (0.70)
0.020 (0.50)
–12–
PRINTED IN U.S.A.
REV. 0
Loading...