Datasheet ADP221 Datasheet (ANALOG DEVICES)

Page 1
Dual, 200 mA, Low Noise,

FEATURES

Input voltage range: 2.5 V to 5.5 V Dual independent 200 mA low dropout voltage regulators Miniature 6-ball, 1.0 mm × 1.5 mm WLCSP Initial accuracy: ±1% Stable with 1 μF ceramic output capacitors No noise bypass capacitor required Two independent logic controlled enables Overcurrent and thermal protection Active output pull-down (ADP221) Key specifications
High PSRR
76 dB PSRR up to 1 kHz 70 dB PSRR at 10 kHz 60 dB PSRR at 100 kHz 40 dB PSRR at 1 MHz
Low output noise
27 μV rms typical output noise at V
50 μV rms typical output noise at V Excellent transient response Low dropout voltage: 150 mV @ 200 mA load 60 μA typical ground current at no load, both LDOs enabled 100 μs fast turn-on circuit Guaranteed 200 mA output current per regulator
−40°C to +125°C junction temperature
= 1.2 V
OUT
= 2.8 V
OUT
High PSRR Voltage Regulator
ADP220/ADP221

TYPICAL APPLICATION CIRCUITS

1
ON
A
OFF
ON
OFF
EN1 VOUT1
B
GND VIN
C
EN2 VOUT2
TOP VIEW
(Not to Scale)
Figure 1. Typical Application Circuit
VIN VOUT1
CURRENT
LIMIT
REFERENCE
EN1
EN2
THERMAL
SHUTDOWN
CONTROL
LOGIC
AND
ENABLE
2
V
= 2.8V
OUT1
1µF
V
= 3.3V
IN
1µF
V
= 2.8V
OUT2
1µF
60
ADP221
ONLY
07572-001

APPLICATIONS

Mobile phones Digital cameras and audio devices Portable and battery-powered equipment Portable medical devices Post dc-to-dc regulation

GENERAL DESCRIPTION

The 200 mA dual output ADP220/ADP221 combine high PSRR, low noise, low quiescent current, and low dropout voltage in a voltage regulator ideally suited for wireless applications with demanding performance and board space requirements.
The low quiescent current, low dropout voltage, and wide input voltage range of the ADP220/ADP221 extend the battery life of portable devices. The ADP220/ADP221 maintain power supply rejection greater than 60 dB for frequencies as high as 100 kHz while operating with a low headroom voltage. The ADP220 offers much lower noise performance than competing LDOs
Rev. D
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.
ADP220
GND
CURRENT
LIMIT
60
Figure 2. Block Diagram of the ADP220/ADP221
without the need for a noise bypass capacitor. The ADP221 also includes an active pull-down to quickly discharge output loads.
The ADP220/ADP221 are available in a miniature 6-ball WLCSP package and is stable with tiny 1 µF ± 30% ceramic output capacitors, resulting in the smallest possible board area for a wide variety of portable power needs.
The ADP220/ADP221 are available in many output voltage combinations, ranging from 0.8 V to 3.3 V, and offer overcur­rent and thermal protection to prevent damage in adverse conditions.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 www.analog.com Fax: 781.461.3113 ©2008–2010 Analog Devices, Inc. All rights reserved.
VOUT2
07572-002
Page 2
ADP220/ADP221

TABLE OF CONTENTS

Features .............................................................................................. 1
Applications ....................................................................................... 1
Typical Application Circuits ............................................................ 1
General Description ......................................................................... 1
Revision History ............................................................................... 2
Specifications ..................................................................................... 3
Input and Output Capacitor, Recommended Specifications .. 4
Absolute Maximum Ratings ............................................................ 5
Thermal Data ................................................................................ 5
Thermal Resistance ...................................................................... 5
ESD Caution .................................................................................. 5
Pin Configuration and Function Descriptions ............................. 6

REVISION HISTORY

5/10—Rev. C to Rev. D
Changes to Figure 1 .......................................................................... 1
Changes to Ordering Guide .......................................................... 17
1/10—Rev. B to Rev. C
Changes to Figure 24 ...................................................................... 10
10/09—Rev. A to Rev. B
Changes to Features Section............................................................ 1
Changes to Table 3 and Table 4 ....................................................... 5
Changes to Figure 4, Figure 6, Figure 7, and Figure 9 ................. 7
Changes to Figure 10 and Figure 12 ............................................... 8
Changes to Figure 17 ........................................................................ 9
Typical Performance Characteristics ..............................................7
Theory of Operation ...................................................................... 11
Applications Information .............................................................. 12
Capacitor Selection .................................................................... 12
Undervoltage Lockout ............................................................... 13
Enable Feature ............................................................................ 13
Current-Limit and Thermal Overload Protection ................. 14
Thermal Considerations ............................................................ 14
Printed Circuit Board (PCB) Layout Considerations ................ 16
Outline Dimensions ....................................................................... 17
Ordering Guide .......................................................................... 17
Changes to Figure 25 ...................................................................... 10
Changes to Enable Feature Section and Figure 32 ..................... 13
Changes to Current-Limit and Thermal Overland Protection
Section and Thermal Considerations Section ............................ 14
Changes to Ordering Guide .......................................................... 17
3/09—Rev. 0 to Rev. A
Changes to Figure 15 ......................................................................... 8
Changes to Figure 16 ......................................................................... 9
Changes to Ordering Guide .......................................................... 17
10/08—Revision 0: Initial Version
Rev. D | Page 2 of 20
Page 3
ADP220/ADP221

SPECIFICATIONS

VIN = (V unless otherwise noted.
Table 1.
Parameter Symbol Conditions Min Typ Max Unit
INPUT VOLTAGE RANGE VIN T OPERATING SUPPLY CURRENT WITH
BOTH REGULATORS ON I I I I I SHUTDOWN CURRENT I EN1= EN2 = GND, TJ = −40°C to +125°C 2 µA FIXED OUTPUT VOLTAGE ACCURACY V
LINE REGULATION V V LOAD REGULATION I DROPOUT VOLTAGE
I I I START-UP TIME V V V ACTIVE PULL-DOWN RESISTANCE t CURRENT-LIMIT THRESHOLD THERMAL SHUTDOWN
Thermal Shutdown Threshold TSSD T
Thermal Shutdown Hysteresis TS EN INPUT
EN Input Logic High VIH 2.5 V VIN ≤ 5.5 V 1.2 V
EN Input Logic Low VIL 2.5 V VIN ≤ 5.5 V 0.4 V
EN Input Leakage Current V
EN1 = EN2 = VIN or GND, TJ = −40°C to +125°C 1 µA UNDERVOLTAGE LOCKOUT UVLO
Input Voltage Rising UVLO
Input Voltage Falling UVLO
Hysteresis UVLO OUTPUT NOISE OUT 10 Hz to 100 kHz, VIN = 5 V, V 10 Hz to 100 kHz, VIN = 3.6 V, V 10 Hz to 100 kHz, VIN = 3.6 V, V
+ 0.5 V) or 2.5 V (whichever is greater), EN1 = EN2 = VIN, I
OUT
= −40°C to +125°C 2.5 5.5 V
J
I
I
GND
EN1= EN2 = GND 0.1 µA
GND-SD
−1 +1 %
OUT
= 0 µA 60 µA
OUT
= 0 µA, TJ = −40°C to +125°C 120 µA
OUT
= 10 mA 70 µA
OUT
= 10 mA, TJ = −40°C to +125°C 140 µA
OUT
= 200 mA 120 µA
OUT
= 200 mA, TJ = −40°C to +125°C 220 µA
OUT
100 µA < I
5.5 V, T
/VIN VIN = (V
OUT
= (V
1
V
2
V
3
t
4
I
/I
OUT
DROPOUT
V
START-UP
SHUTDOWN
240 300 440 mA
LIMIT
SD-HYS
I-LEAKAGE
RISE
FAL L
HYS
NOISE
IN
I
OUT
V
= 1 mA to 200 mA 0.001 %/mA
OUT
= 1 mA to 200 mA, TJ = −40°C to +125°C 0.003 %/mA
OUT
V
= 3.3 V mV
OUT
I
= 10 mA 7.5 mV
OUT
= 10 mA, TJ = −40°C to +125°C 12 mV
OUT
= 200 mA 150 mV
OUT
= 200 mA, TJ = −40°C to +125°C 230 mV
OUT
= 3.3 V, both initially off, enable one 240 µs
OUT
= 0.8 V, both initially off, enable one 100 µs
OUT
= 3.3 V, one initially on, enable second 180 µs
OUT
= 0.8 V, one initially on, enable second 20 µs
OUT
= 2.8 V, R
OUT
rising 155 °C
J
15 °C
EN1 = EN2 = VIN or GND 0.1 µA
2.45 V
2.2 V 100 mV 10 Hz to 100 kHz, VIN = 5 V, V
= I
OUT1
< 200 mA, VIN = (V
OUT
= −40°C to +125°C
J
+ 0.5 V) to 5.5 V 0.01 %/V
OUT
+ 0.5 V) to 5.5 V, TJ = −40°C to +125°C −0.03 +0.03 %/V
OUT
= ∞, C
LOAD
= 10 mA, CIN = C
OUT2
+ 0.5 V) to
OUT
= 1 F, ADP221 only 80
OUT
= 3.3 V 56 µV rms
OUT
= 2.8 V 50 µV rms
OUT
= 2.5 V 45 µV rms
OUT
= 1.2 V 27 µV rms
OUT
OUT1
= C
= 1 µF, TA = 25°C,
OUT2
−2 +2 %
Rev. D | Page 3 of 20
Page 4
ADP220/ADP221
Parameter Symbol Conditions Min Typ Max Unit
POWER SUPPLY REJECTION RATIO PSRR VIN = 2.5 V, V 100 Hz 76 dB 1 kHz 76 dB 10 kHz 70 dB 100 kHz 60 dB 1 MHz 40 dB V
= 3.8 V, V
IN
100 Hz 68 dB 1 kHz 68 dB 10 kHz 68 dB 100 kHz 60 dB 1 MHz 40 dB
1
Based on an end-point calculation using 1 mA and 200 mA loads.
2
Dropout voltage is defined as the input-to-output voltage differential when the input voltage is set to the nominal output voltage. This applies only for output
voltages above 2.5 V.
3
Start-up time is defined as the time between the rising edge of ENx to V
4
Current-limit threshold is defined as the current at which the output voltage drops to 90% of the specified typical value. For example, the current limit for a 3.0 V
output voltage is defined as the current that causes the output voltage to drop to 90% of 3.0 V, or 2.7 V.
being at 90% of its nominal value.
OUTx

INPUT AND OUTPUT CAPACITOR, RECOMMENDED SPECIFICATIONS

= 0.8 V, I
OUT
= 2.8 V, I
OUT
= 100 mA
OUT
= 100 mA
OUT
Table 2.
Parameter Symbol Conditions Min Typ Max Unit
MINIMUM INPUT AND OUTPUT CAPACITANCE CAPACITOR ESR R
1
The minimum input and output capacitance should be greater than 0.70 µF over the full range of operating conditions. The full range of operating conditions in the
application must be considered during device selection to ensure that the minimum capacitance specification is met. X7R and X5R type capacitors are recommended; Y5V and Z5U capacitors are not recommended for use with LDOs.
1
C
TA = −40°C to +125°C 0.70 µF
MIN
T
ESR
= −40°C to +125°C 0.001 1
A
Rev. D | Page 4 of 20
Page 5
ADP220/ADP221

ABSOLUTE MAXIMUM RATINGS

Table 3.
Parameter Rating
VIN to GND –0.3 V to +6.5 V VOUT1, VOUT2 to GND –0.3 V to VIN EN1, EN2 to GND –0.3 V to +6.5 V Storage Temperature Range –65°C to +150°C Operating Junction Temperature Range –40°C to +125°C Soldering Conditions JEDEC J-STD-020
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

THERMAL DATA

Absolute maximum ratings apply individually only, not in combination.
The ADP220/ADP221 can be damaged when the junction temperature limits are exceeded. Monitoring ambient temper­ature does not guarantee that the junction temperature (T is within the specified temperature limits. In applications with high power dissipation and poor thermal resistance, the maximum ambient temperature may have to be derated. In applications with moderate power dissipation and low PCB thermal resistance, the maximum ambient temperature can exceed the maximum limit as long as the junction temperature is within specification limits. The junction temperature (T the device is dependent on the ambient temperature (T power dissipation of the device (P thermal resistance of the package (θ temperature (T (T
) and power dissipation (PD) using the following formula:
A
T
= TA + (PD × θJA)
J
) is calculated from the ambient temperature
J
), and the junction-to-ambient
D
). Maximum junction
JA
J
), the
A
)
) of
J
Junction-to-ambient thermal resistance (θ based on modeling and calculation using a 4-layer board. The junction-to-ambient thermal resistance is highly dependent on the application and board layout. In applications where high maximum power dissipation exists, close attention to thermal board design is required. The value of θ on PCB material, layout, and environmental conditions. The specified values of θ circuit board. Refer to JEDEC JESD 51-9 for detailed informa­tion on the board construction. For additional information, see the AN-617 Application Note, MicroCSP Scale Package.
Ψ
is the junction-to-board thermal characterization parameter
JB
with units of °C/W. Ψ calculation using a 4-layer board. The JESD51-12, Guidelines for Reporting and Using Package Thermal Information, states that thermal characterization parameters are not the same as thermal resistances. Ψ through multiple thermal paths rather than a single path as in thermal resistance, θ convection from the top of the package as well as radiation from the package. Factors that make Ψ world applications. Maximum junction temperature (T calculated from the board temperature (T dissipation (P
= TB + (PD × ΨJB)
T
J
Refer to JEDEC JESD51-8 and JESD51-12 for more detailed information on Ψ

THERMAL RESISTANCE

θJA and ΨJB are specified for the worst-case conditions, that is, a device soldered in a circuit board for surface-mount packages.
Table 4.
Package Type θJA ΨJB Unit
6-Ball, 0.5 mm Pitch WLCSP 260 43.8 °C/W
are based on a four-layer, 4 inch × 3 inch,
JA
of the package is based on modeling and
JB
measures the component power flowing
JB
. Therefore, ΨJB thermal paths include
JB
) using the following formula:
D
.
JB
) of the package is
JA
may vary, depending
JA
TM
Wafer L ev e l Chi p
more useful in real-
JB
) is
J
) and power
B

ESD CAUTION

Rev. D | Page 5 of 20
Page 6
ADP220/ADP221
A
C

PIN CONFIGURATION AND FUNCTION DESCRIPTIONS

1
EN1 VOUT1
B
GND VIN
EN2 VOUT2
TOP VIEW
(BALL SIDE DOWN)
Not to Scal e
Figure 3. Pin Configuration
Table 5. Pin Function Descriptions
Pin No. Mnemonic Description
A1 EN1
Enable Input for Regulator 1. Drive EN1 high to turn on Regulator 1; drive it low to turn off Regulator 1.
For automatic startup, connect EN1 to VIN. B1 GND Ground Pin. C1 EN2
Enable Input for Regulator 2. Drive EN2 high to turn on Regulator 2; drive it low to turn off Regulator 2.
For automatic startup, connect EN2 to VIN. A2 VOUT1 Regulated Output Voltage 1. Connect a 1 µF or greater output capacitor between VOUT1 and GND. B2 VIN Regulator Input Supply. Bypass VIN to GND with a 1 µF or greater capacitor. C2 VOUT2 Regulated Output Voltage 2. Connect a 1 µF or greater output capacitor between VOUT2 and GND.
2
7572-003
Rev. D | Page 6 of 20
Page 7
ADP220/ADP221

TYPICAL PERFORMANCE CHARACTERISTICS

VIN = 3.3 V, V
OUT1
= V
= 2.8 V, I
OUT2
= 10 mA, CIN = C
OUT
OUT1
= C
= 1 µF, TA = 25°C, unless otherwise noted.
OUT2
2.85
2.83
2.81
2.79
OUTPUT VOLTAGE (V)
2.77
2.75 –40–52585125
JUNCTION TE MPERATURE (°C)
Figure 4. Output Voltage vs. Junction Temperature
2.85
V
= 2.8V
OUT
V
= 3.3V
IN
T
= 25°C
2.83
2.81
2.79
OUTPUT VOLTAGE (V)
2.77
A
I
LOAD
I
LOAD
I
LOAD
I
LOAD
I
LOAD
I
LOAD
= 10µA = 100µA = 1mA = 10mA = 100mA = 200mA
140
120
100
80
60
I
= 10µA
40
GROUND CURRENT (µA)
20
0
40–52585125
07572-004
JUNCTION TE MPERATURE (°C)
LOAD
I
LOAD
I
LOAD
I
LOAD
I
LOAD
I
LOAD
= 100µA = 1mA = 10mA = 100mA = 200mA
07572-007
Figure 7. Ground Current vs. Junction Temperature, Single Output Loaded
120
V
= 2.8V
OUT
V
= 3.3V
IN
100
T
= 25°C
A
80
60
40
GROUND CURRENT (µA)
20
2.75
0.01 0.1 1 10 100 1k
LOAD CURRENT (mA)
Figure 5. Output Voltage vs. Load Current
2.85
I
V
= 2.8V
OUT
T
= 25°C
2.83
2.81
2.79
OUTPUT VOLTAGE (V)
2.77
2.75
A
3.3 3.5 3.7 3.9 4.1 4.3 4.5 4.7 4.9 5.1 5.3 5.5
INPUT VOLTAGE (V)
LOAD
I
LOAD
I
LOAD
I
LOAD
I
LOAD
I
LOAD
= 10µA = 100µA = 1mA = 10mA = 100mA = 200mA
Figure 6. Output Voltage vs. Input Voltage
07572-005
07572-006
Rev. D | Page 7 of 20
0
0.01 0.1 1 10 100 1k
LOAD CURRENT (mA)
Figure 8. Ground Current vs. Load Current, Single Output Loaded
120
100
80
60
I
= 10µA
40
GROUND CURRENT (µA)
20
0
3.3 3.5 3.7 3.9 4.1 4.3 4.5 4.7 4.9 5.1 5.3 5.5
INPUT VOLTAGE (V)
LOAD
I
LOAD
I
LOAD
I
LOAD
I
LOAD
I
LOAD
= 100µA = 1mA = 10mA = 100mA = 200mA
Figure 9. Ground Current vs. Input Voltage, Single Output Loaded
07572-008
07572-009
Page 8
ADP220/ADP221
160
140
120
100
80
60
GROUND CURRENT (µA)
40
20
0
40–52585125
JUNCTION TE MPERATURE (°C)
I
LOAD
I
LOAD
I
LOAD
I
LOAD
I
LOAD
I
LOAD
= 10µA = 100µA = 1mA = 10mA = 100mA = 200mA
07572-010
Figure 10. Ground Current vs. Junction Temperature, Both Outputs Loaded
140
V
= 2.8V
OUT
V
= 3.3V
IN
120
T
= 25°C
A
100
80
0.9
0.8
0.7
0.6
3.3V
3.6V
4.0V
4.3V
4.9V
5.5V
0.5
0.4
0.3
SHUTDOWN CURRENT ( µA)
0.2
0.1
0
–50 –25 1251007550250
TEMPERATURE ( °C)
Figure 13. Shutdown Current vs. Temperature at Various Input Voltages
250
200
150
2.5V
2.8V
3.3V
07572-013
60
40
GROUND CURRENT (µA)
20
0
0.01 0.1 1 10 100 1k
LOAD CURRRENT (mA)
Figure 11. Ground Current vs. Load Current, Both Outputs Loaded
140
120
100
80
60
I
= 10µA
LOAD
I
= 100µA
40
GROUND CURRENT (µA)
20
0
3.3 3.5 3.7 3.9 4.1 4.3 4.5 4.7 4.9 5.1 5.3 5. 5
LOAD
I
LOAD
I
LOAD
I
LOAD
I
LOAD
= 1mA = 10mA = 100mA = 200mA
INPUT VOLTAGE (V)
Figure 12. Ground Current vs. Input Voltage, Both Outputs Loaded
100
DROPOUT VOLTAGE (mV)
50
0
110100
07572-011
LOAD CURRENT (mA)
1k
07572-014
Figure 14. Dropout Voltage vs. Load Current and Output Voltage
2.90
2.85
2.80
2.75
2.70
2.65
2.60
I
2.55
OUTPUT VOLTAGE (V)
2.50
2.45
2.40
2.6 2.7 2.8 2.9 3.0 3.1
07572-012
INPUT VOLTAGE (V)
LOAD
I
LOAD
I
LOAD
I
LOAD
I
LOAD
I
LOAD
= 1mA = 5mA = 10mA = 50mA = 100mA = 200mA
07572-015
Figure 15. Output Voltage vs. Input Voltage (In Dropout)
Rev. D | Page 8 of 20
Page 9
ADP220/ADP221
180
160
140
120
100
80
60
GROUND CURRENT (µA)
40
20
0
I
= 1mA
LOAD
I
= 5mA
LOAD
I
= 10mA
LOAD
I
= 50mA
LOAD
I
= 100mA
LOAD
I
= 200mA
LOAD
2.6 2.7 2.8 2.9 3.0 3.1
INPUT VOLTAGE (V)
Figure 16. Ground Current vs. Input Voltage (In Dropout)
07572-016
10
V
–20
–30
–40
RIPPLE
V
IN
V
OUT
C
OUT
= 2.5V
= 0.8V = 1µF
= 50mV
200mA 100mA 10mA 1mA 100µA
–50
–60
PSRR (dB)
–70
–80
–90
–100
–110
10 100 1k 10k 100k 1M 10M
FREQUENCY (Hz)
Figure 19. Power Supply Rejection Ratio vs. Frequency, 0.8 V
07572-019
10
V
–20
–30
–40
RIPPLE
V
IN
V
OUT
C
OUT
= 3.8V
= 2.8V = 2.2µF
= 50mV
200mA 100mA 10mA 1mA 100µA
–50
–60
PSRR (dB)
–70
–80
–90
–100
–110
10 100 1k 10k 100k 1M 10M
FREQUENCY (Hz)
Figure 17. Power Supply Rejection Ratio vs. Frequency, 2.8 V
0
V
–10
–20
–30
RIPPLE
V
IN
V
OUT
C
OUT
= 4.3V
= 3.3V = 1µF
= 50mV
200mA 100mA 10mA 1mA 100µA
–40
–50
PSRR (dB)
–60
–70
–80
–90
–100
10 100 1k 10k 100k 1M 10M
FREQUENCY (Hz)
Figure 18. Power Supply Rejection Ratio vs. Frequency, 3.3 V
0
–10
3.3V/200mA 0.8V/200mA 1.8V/ 200mA
3.3V/100µA 0.8V/100µA 1.8V/100µA
–20
–30
–40
–50
PSRR (dB)
–60
–70
–80
–90
–100
10 100 1k 10k 100k 1M 10M
07572-017
FREQUENCY (Hz)
07572-020
Figure 20. Power Supply Rejection Ratio vs. Frequency, at Various Output
Voltages and Load Currents
10
1
0.1
OUTPUT NOI SE SPECTRUM ( µV/ Hz)
0.01 10 100 1k 10k 100k
07572-018
FREQUENCY (Hz)
Figure 21. Output Noise Spectrum, VIN = 5 V, I
3.3V µV/ Hz
2.8V µV/ Hz
0.8V µV/ Hz
= 10 mA
LOAD
07572-021
Rev. D | Page 9 of 20
Page 10
ADP220/ADP221
60
50
40
2
30
T
VIN = 4V TO 5V, I
V
IN
LOAD1
= 200mA, I
V
OUT1
LOAD2
= 100mA
NOISE (µV rms)
20
3.3V
10
0
0.001 0. 01 0.1 1 10 100 1k
2.8V
1.8V
0.8V
LOAD CURRENT (mA)
Figure 22. Output Noise vs. Load Current and Output Voltage, VIN = 5 V
1
2
3
CH1 200mA
CH3 10.0mV
T
I
LOAD1
V
OUT1
V
B
W
B
W
OUT2
I
LOAD1
CH2 50.0mV
= 1mA TO 200mA, I
B
M40.0μs A CH1 132mA
W
T 10.00%
LOAD2
= 1mA
Figure 23. Load Transient Response,
= 1 mA to 200 mA, I
I
LOAD1
CH1 = I
LOAD1
, CH2 = V
OUT1
= 1 mA
LOAD2
, CH3 = V
OUT2
V
1 3
CH1 1.00V
07572-022
CH3 5.00mV
OUT2
B
W
B
W
CH2 5.00mV
B
M20.0μs A CH1 4.46V
W
T 13.60%
07572-025
Figure 25. Line Transient Response,
= 4 V to 5 V, I
V
IN
CH1 = V
T
VIN = 4V TO 5V, I
V
CH1 1.00V
CH3 5.00mV
OUT1
V
B
OUT2
CH2 5.00mV
W
B
W
2
1
3
07572-023
LOAD1
, CH2 = V
IN
V
IN
= 200 mA, I
LOAD2
, CH3 = V
OUT1
= 200mA, I
LOAD1
B
M20.0μs A CH1 4.46V
W
T 10.00%
= 100 mA
OUT2
= 1mA
LOAD2
07572-026
Figure 26. Line Transient Response
= 4 V to 5 V, I
V
IN
CH1 = V
LOAD1
, CH2 = V
IN
= 200 mA, I
, CH3 = V
OUT1
LOAD2
= 1 mA
OUT2
T
1
I
LOAD1
2
3
CH1 200mA
CH3 10.0mV
I
LOAD1
= 1mA TO 200mA, I
V
OUT1
V
OUT2
B
CH2 50.0mV
W
B
W
= 100mA
LOAD2
B
M40.0μs A CH1 132mA
W
T 10.00%
Figure 24. Load Transient Response,
= 1 mA to 200 mA, I
I
LOAD1
CH1 = I
LOAD1
, CH2 = V
LOAD2
OUT1
= 100 mA,
, CH3 = V
OUT2
07572-024
1
2
3
CH1 5.00V
CH3 2.00V
T
B
W
B
W
CH2 2.00V
B
M40.0μs A CH1 2.10V
W
T 9.80%
Figure 27. Shutdown Response, ADP221
07572-027
Rev. D | Page 10 of 20
Page 11
ADP220/ADP221

THEORY OF OPERATION

The ADP220/ADP221 are low quiescent current, low dropout linear regulators that operate from 2.5 V to 5.5 V and provide up to 200 mA of current from each output. Drawing a low 120 A quiescent current (typical) at full load makes the ADP220/ ADP221 ideal for battery-operated portable equipment. Shut­down current consumption is typically 100 nA.
Optimized for use with small 1 µF ceramic capacitors, the ADP220/ADP221 provide excellent transient performance.
VIN VOUT1
60
EN1
EN2
GND
THERMAL
SHUTDOWN
CONTROL
LOGIC
AND
ENABLE
ADP220
CURRENT
LIMIT
REFERENCE
CURRENT
LIMIT
Figure 28. Internal Block Diagram
ADP221
ONLY
60
VOUT2
07572-028
Internally, the ADP220/ADP221 consist of a reference, two error amplifiers, two feedback voltage dividers, and two PMOS pass transistors. Output current is delivered via the PMOS pass device, which is controlled by the error amplifier. The error amplifier compares the reference voltage with the feedback voltage from the output and amplifies the difference. If the feedback voltage is lower than the reference voltage, the gate of the PMOS device is pulled lower, allowing more current to flow and increasing the output voltage. If the feedback voltage is higher than the reference voltage, the gate of the PMOS device is pulled higher, allowing less current to flow and decreasing the output voltage.
The ADP221 also includes an active pull-down circuit to rapidly discharge the output load capacitance when each output is disabled.
The ADP220/ADP221 are available in multiple output voltage options ranging from 0.8 V to 3.3 V. The ADP220/ADP221 use the EN1/EN2 pins to enable and disable the VOUT1/VOUT2 pins under normal operating conditions. When EN1/EN2 are high, VOUT1/VOUT2 turn on; when EN1/EN2 are low, VOUT1/ VOUT2 turn off. For automatic startup, EN1/EN2 can be tied to VIN.
Rev. D | Page 11 of 20
Page 12
ADP220/ADP221

APPLICATIONS INFORMATION

CAPACITOR SELECTION

Output Capacitor

The ADP220/ADP221 are designed for operation with small, space-saving ceramic capacitors, but the parts function with most commonly used capacitors as long as care is taken with regards to the effective series resistance (ESR) value. The ESR of the output capacitor affects stability of the LDO control loop. A minimum of 0.70 µF capacitance with an ESR of 1 Ω or less is recommended to ensure stability of the ADP220/ADP221. Transient response to changes in load current is also affected by output capacitance. Using a larger value of output capacitance improves the transient response of the ADP220/ADP221 to large changes in the load current. Figure 29 and Figure 30 show the transient responses for output capacitance values of 1 µF and
4.7 µF, respectively.
T
I
LOAD1
1
I
= 1mA TO 200mA, I
LOAD1
2
V
OUT1
3
CH1 200mA
CH3 10.0mV
B
CH2 50.0mV
W
B
W
B
W
T 26.60%
Figure 29. Output Transient Response
I
= 1 mA to 200 mA, I
LOAD1
CH1 = I
LOAD1
, CH2 = V
OUT1
, CH3 = V
T
1
I
LOAD1
2
V
OUT1
I
LOAD1
= 1mA TO 200mA, I
= 1mA
LOAD2
V
OUT2,COUT
M200ns A CH1 132mA
LOAD2
= 1 mA
OUT2
LOAD2
, C
OUT
= 1mA
= 1µF
= 1 μF
07572-029

Input Bypass Capacitor

Connecting a 1 µF capacitor from VIN to GND reduces the circuit sensitivity to the PCB layout, especially when long input traces or high source impedance are encountered. If an output capacitance greater than 1 µF is required, the input capacitor should be increased to match it.

Input and Output Capacitor Properties

Any good quality ceramic capacitor can be used with the ADP220/ ADP221, as long as the capacitor meets the minimum capacit­ance and maximum ESR requirements. Ceramic capacitors are manufactured with a variety of dielectrics, each with a different behavior over temperature and applied voltage. Capacitors must have an adequate dielectric to ensure the minimum capacitance over the necessary temperature range and dc bias conditions. X5R or X7R dielectrics with a voltage rating of 6.3 V or 10 V are recommended. Y5V and Z5U dielectrics are not recommended, due to their poor temperature and dc bias characteristics.
Figure 31 depicts the capacitance vs. voltage bias characteristic of an 0402 1 µF, 10 V, X5R capacitor. The voltage stability of a capacitor is strongly influenced by the capacitor size and voltage rating. In general, a capacitor in a larger package or higher voltage rating exhibits better stability. The temperature variation of the X5R dielectric is about ±15% over the −40°C to +85°C tempera­ture range and is not a function of the package or voltage rating.
1.2
1.0
0.8
0.6
0.4
CAPACITANCE (µF)
0.2
0
024681
VOLTAGE (V)
Figure 31. Capacitance vs. Voltage Bias Characteristic
0
07572-031
3
CH1 200mA
CH3 10.0mV
CH1 = I
V
OUT2,COUT
B
CH2 50.0mV
W
B
W
B
M1.00µs A CH1 132mA
W
T 11.40%
Figure 30. Output Transient Response
I
= 1 mA to 200 mA, I
LOAD1
, CH2 = V
LOAD1
OUT1
, CH3 = V
LOAD2
OUT2
= 1 mA
, C
OUT
= 4.7µF
= 4.7 μF
07572-030
Rev. D | Page 12 of 20
Page 13
ADP220/ADP221
Equation 1 can be used to determine the worst-case capacitance accounting for capacitor variation over temperature, compo­nent tolerance, and voltage.
C
= C
EFF
× (1 − TEMPCO) × (1 − TOL) (1)
BIAS
where: C
is the effective capacitance at the operating voltage.
BIAS
TEMPCO is the worst-case capacitor temperature coefficient. TOL is the worst-case component tolerance.
In this example, TEMPCO over −40°C to +85°C is assumed to be 15% for an X5R dielectric. TOL is assumed to be 10%, and C
is 0.94 F at 1.8 V from the graph in Figure 31.
BIAS
Substituting these values into Equation 1 yields
C
= 0.94 F × (1 − 0.15) × (1 − 0.1) = 0.719 F
EFF
Therefore, the capacitor chosen in this example meets the minimum capacitance requirement of the LDO over temperature and tolerance at the chosen output voltage.
To guarantee the performance of the ADP220/ADP221, it is imperative that the effects of dc bias, temperature, and toler­ances on the behavior of the capacitors be evaluated for each application.

UNDERVOLTAGE LOCKOUT

The ADP220/ADP221 have an internal undervoltage lockout circuit that disables all inputs and the output when the input voltage is less than approximately 2.2 V. This ensures that the inputs of the ADP220/ADP221 and the output behave in a predictable manner during power-up.

ENABLE FEATURE

The ADP220/ADP221 use the ENx pins to enable and disable the VOUTx pins under normal operating conditions. Figure 32 shows a rising voltage on ENx crossing the active threshold, then V inactive threshold, V
turns on. When a falling voltage on ENx crosses the
OUTx
turns off.
OUTx
As shown in Figure 32, the ENx pins have built-in hysteresis. This prevents on/off oscillations that can occur due to noise on the ENx pins as it passes through the threshold points.
The active/inactive thresholds of the ENx pins are derived from the VIN voltage. Therefore, these thresholds vary with changing input voltage. Figure 33 shows typical ENx active/inactive thresh­olds when the input voltage varies from 2.5 V to 5.5 V.
1.00
0.95
0.90
0.85
0.80
0.75
0.70
ENx PINS THRES HOLD (V)
0.65
0.60
2.5 3.0 3. 5 4 .0 4.5 5. 0 5.5
EN ACTIVE
EN INACTIVE
INPUT VOLTAGE (V)
07572-033
Figure 33. Typical ENx Pins Thresholds vs. Input Voltage
The ADP220/ADP221 utilize an internal soft start to limit the inrush current when the output is enabled. The start-up time for the 2.8 V option is approximately 220 µs from the time the ENx active threshold is crossed to when the output reaches 90% of its final value. The start-up time is somewhat dependent on the output voltage setting and increases slightly as the output voltage increases.
T
1
1
CH1 500mV
T
V
OUTx
ENx
B
CH2 500mV
W
B
M10.0ms A CH2 1.76V
W
T 27.40%
Figure 32. Typical ENx Pin Operation
07572-032
Rev. D | Page 13 of 20
2
3
CH1 5.00V
CH3 2.00V
B
W
B
W
CH2 2.00V
B
M40.0µs A CH1 2.10V
W
T 9.80%
Figure 34. Typical Start-Up Time
07572-034
Page 14
ADP220/ADP221

CURRENT-LIMIT AND THERMAL OVERLOAD PROTECTION

The ADP220/ADP221 are protected against damage due to excessive power dissipation by current and thermal overload protection circuits. The ADP220/ADP221 are designed to current limit when the output load reaches 300 mA (typical). When the output load exceeds 300 mA, the output voltage is reduced to maintain a constant current limit.
Thermal overload protection is built-in, which limits the junction temperature to a maximum of 155°C (typical). Under extreme conditions (that is, high ambient temperature and power dissipation) when the junction temperature starts to rise above 155°C, the output is turned off, reducing the output current to zero. When the junction temperature drops below 140°C, the output is turned on again and the output current is restored to its nominal value.
Consider the case where a hard short from VOUTx to GND occurs. At first, the ADP220/ADP221 current limit, so that only 300 mA is conducted into the short. If self-heating of the junction is great enough to cause its temperature to rise above 155°C, thermal shutdown activates, turning off the output and reducing the output current to zero. As the junction temperature cools and drops below 140°C, the output turns on and conducts 300 mA into the short, again causing the junction temperature to rise above 155°C. This thermal oscillation between 140°C and 155°C causes a current oscillation between 0 mA and 300 mA that continues as long as the short remains at the output.
Current and thermal limit protections are intended to protect the device against accidental overload conditions. For reliable operation, device power dissipation must be externally limited so that junction temperatures do not exceed 125°C.

THERMAL CONSIDERATIONS

In most applications, the ADP220/ADP221 do not dissipate much heat due to high efficiency. However, in applications with a high ambient temperature and high supply voltage to output voltage differential, the heat dissipated in the package is large enough that it can cause the junction temperature of the die to exceed the maximum junction temperature of 125°C.
When the junction temperature exceeds 155°C, the converter enters thermal shutdown. It recovers only after the junction temperature has decreased below 140°C to prevent any permanent damage. Therefore, thermal analysis for the chosen application is very important to guarantee reliable performance over all conditions. The junction temperature of the die is the sum of the ambient temperature of the environment and the tempera­ture rise of the package due to the power dissipation, as shown in Equation 2.
To guarantee reliable operation, the junction temperature of the ADP220/ADP221 must not exceed 125°C. To ensure that the junction temperature stays below this maximum value, the user needs to be aware of the parameters that contribute to junction temperature changes. These parameters include ambient tem­perature, power dissipation in the power device, and thermal resistances between the junction and ambient air (θ
). The θJA
JA
number is dependent on the package assembly compounds used and the amount of copper to which the GND pins of the package are soldered on the PCB. Tab l e 6 shows typical θ
values for the
JA
ADP220/ADP221 for various PCB copper sizes.
Table 6. Typical θ
Values
JA
Copper Size (mm2) ADP220/ADP221 (°C/W)
01 200 50 119 100 118 300 115 500 113
1
Device soldered to minimum size pin traces.
The junction temperature of the ADP220/ADP221 can be calculated from the following equation:
T
= TA + (PD × θJA) (2)
J
where:
T
is the ambient temperature.
A
P
is the power dissipation in the die, given by
D
= Σ[(VIN − V
P
D
OUT
) × I
] + Σ(VIN × I
LOAD
) (3)
GND
where:
I
is the load current.
LOAD
I
is the ground current.
GND
V
and V
IN
are input and output voltages, respectively.
OUT
Power dissipation due to ground current is quite small and can be ignored. Therefore, the junction temperature equation simplifies to
T
= TA + {Σ[(VIN − V
J
OUT
) × I
] × θJA} (4)
LOAD
As shown in Equation 4, for a given ambient temperature, input-to-output voltage differential, and continuous load current, there exists a minimum copper size requirement for the PCB to ensure the junction temperature does not rise above 125°C. Figure 35 to Figure 39 show junction temperature calculations for different ambient temperatures, total power dissipation, and areas of PCB copper.
In cases where the board temperature is known, the thermal characterization parameter, Ψ junction temperature rise. T
, can be used to estimate the
JB
is calculated from TB and PD using
J
the formula
T
= TB + (PD × ΨJB) (5)
J
The typical Ψ
value for the 6-ball WLCSP is 43.8°C/W.
JB
Rev. D | Page 14 of 20
Page 15
ADP220/ADP221
145
135
125
115
105
95
85
75
65
55
JUNCTION TEM PERATURE (°C)
45
35
25
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
TOTAL PO WER DISSIPATION (W )
500mm 50mm 0mm T
JMAX
2
2
2
Figure 35. Junction Temperature vs. Total Power Dissipation, TA = 25°C
07572-035
135
125
115
105
2
95
JUNCTION TEM PERATURE (°C)
85
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
TOTAL PO WER DISSIPATION (W )
500mm 50mm 0mm T
JMAX
2
2
Figure 38. Junction Temperature vs. Total Power Dissipation, TA = 85°C
07572-038
140
130
120
110
100
90
80
70
JUNCTION TEM PERATURE (°C)
60
50
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
TOTAL PO WER DISSIPATION (W )
500mm 50mm 0mm T
JMAX
2
2
2
Figure 36. Junction Temperature vs. Total Power Dissipation, TA = 50°C
145
135
125
115
105
95
140
120
100
80
60
40
JUNCTION TEM PERATURE (°C)
20
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.22.0 2.4
07572-036
TOTAL PO WER DISSIPATION (W )
TB = 25°C T
= 50°C
B
T
= 65°C
B
T
= 85°C
B
T
JMAX
07572-039
Figure 39. Junction Temperature vs. Total Power Dissipation and
Board Temperature
85
JUNCTION TEM PERATURE (°C)
75
65
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
TOTAL PO WER DISSIPATION (W )
500mm 50mm 0mm T
JMAX
2
2
Figure 37. Junction Temperature vs. Total Power Dissipation, TA = 65°C
2
07572-037
Rev. D | Page 15 of 20
Page 16
ADP220/ADP221

PRINTED CIRCUIT BOARD (PCB) LAYOUT CONSIDERATIONS

Heat dissipation from the package can be improved by increasing the amount of copper attached to the pins of the ADP220/ADP221. However, as shown in Tab l e 6, a point of diminishing returns eventually is reached, beyond which an increase in the copper size does not yield significant heat dissipation benefits.
Place the input capacitor as close as possible to the VIN and GND pins. Place the output capacitors as close as possible to the VOUT1, VOUT2, and GND pins. Use 0402 or 0603 size capacitors and resistors to achieve the smallest possible footprint solution on boards where area is limited.
Figure 40. Example of PCB Layout, Top Side
07572-040
07572-041
Figure 41. Example of PCB Layout, Bottom Side
Rev. D | Page 16 of 20
Page 17
ADP220/ADP221

OUTLINE DIMENSIONS

0.675
0.595
0.515
SEATING PLANE
0.345
1.00
0.295 BSC
0.245
0.50 BSC
0.075 COPLANARITY
(CB-6-2)
Package Description
12
BOTTOM VIEW
(BALL SIDE UP)
A
B
C
0.50 BSC
081607-B
Package Option
Branding
1.50
1.45
1.40
0.380
0.355
0.330
0.270
0.240
0.210
A1 BALL CORNER
1.00
0.95
0.90
TOP VIEW
(BALL SIDE DOWN)
Figure 42. 6-Ball Wafer Level Chip Scale Package [WLCSP]
Dimensions show in millimeters

ORDERING GUIDE

Te mp e ra tu r e Range
Model
1
ADP220ACBZ-1118R7 −40°C to +125°C 1.1/1.8 6-Ball Wafer Level Chip Scale Package [WLCSP] CB-6-2 LFY ADP220ACBZ-1812R7 −40°C to +125°C 1.8/1.2 6-Ball Wafer Level Chip Scale Package [WLCSP] CB-6-2 LEK ADP220ACBZ-1827R7 −40°C to +125°C 1.8/2.7 6-Ball Wafer Level Chip Scale Package [WLCSP] CB-6-2 LEH ADP220ACBZ-2623R7 −40°C to +125°C 2.6/2.3 6-Ball Wafer Level Chip Scale Package [WLCSP] CB-6-2 LGD ADP220ACBZ-26235R7 −40°C to +125°C 2.6/2.35 6-Ball Wafer Level Chip Scale Package [WLCSP] CB-6-2 L9L ADP220ACBZ-2812R7 −40°C to +125°C 2.8/1.2 6-Ball Wafer Level Chip Scale Package [WLCSP] CB-6-2 L8X ADP220ACBZ-2818R7 −40°C to +125°C 2.8/1.8 6-Ball Wafer Level Chip Scale Package [WLCSP] CB-6-2 LEL ADP220ACBZ-2827R7 −40°C to +125°C 2.8/2.7 6-Ball Wafer Level Chip Scale Package [WLCSP] CB-6-2 L8Y ADP220ACBZ-2828R7 −40°C to +125°C 2.8/2.8 6-Ball Wafer Level Chip Scale Package [WLCSP] CB-6-2 L8W ADP220ACBZ275275R7 −40°C to +125°C 2.75/2.75 6-Ball Wafer Level Chip Scale Package [WLCSP] CB-6-2 L8Z ADP221ACBZ3033-R7 −40°C to +125°C 3.0/3/3 6-Ball Wafer Level Chip Scale Package [WLCSP] CB-6-2 LH4 ADP221ACBZ2828-R7 −40°C to +125°C 2.8/2.8 6-Ball Wafer Level Chip Scale Package [WLCSP] CB-6-2 L90 ADP220-2828-EVALZ −40°C to +125°C 2.8/2.8 2.8 V/2.8 V Evaluation Board ADP221-2828-EVALZ −40°C to +125°C 2.8/2.8 2.8 V/2.8 V with Output Discharge Evaluation Board
1
Z = RoHS Compliant Part.
2
For additional voltage options, contact a local Analog Devices sales or distribution representative.
Output Voltage (V)
2
Rev. D | Page 17 of 20
Page 18
ADP220/ADP221
NOTES
Rev. D | Page 18 of 20
Page 19
ADP220/ADP221
NOTES
Rev. D | Page 19 of 20
Page 20
ADP220/ADP221
NOTES
©2008–2010 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D07572-0-5/10(D)
Rev. D | Page 20 of 20
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