Datasheet ADP198 Datasheet (ANALOG DEVICES)

Logic Controlled, 1 A, High-Side Load

Switch with Reverse Current Blocking

Data Sheet

FEATURES

Low RDSON of 50 mΩ @ 3.3 V (WLCSP only)
Low input voltage range: 1.65 V to 6.5 V
1 A continuous operating current
Built-in level shift for control logic that can be operated by

1.2 V logic
Low 2.5 μA quiescent current @ V
Low 1.1 μA shutdown current @ V
Reverse current blocking
Programmable start-up time
Ultrasmall 1 mm × 1 mm, 4-ball, 0.5 mm pitch (WLCSP)
Tiny 8-lead lead frame chip scale package (LFCSP)

2.0 mm × 2.0 mm × 0.55 mm, 0.5 mm pitch

APPLICATIONS

Mobile phones
Digital cameras and audio devices
Portable and battery-powered equipment

= 2.8 V

IN

= 2.8 V

IN

TYPICAL APPLICATION CIRCUITS

ADP198

VIN

+

GND

EN

ON

OFF

Figure 1. WLCSP

ADP198

VIN

+

VIN VOUT

SEL0

SEL1

ON

EN

OFF

GND

REVERSE

POLARITY

PROTECTION

LEVEL SHIFT

AND SLEW

RATE CONTROL

REVERSE

POLARITY

PROTECTION

SLEW

RATE CONTROL

LEVEL SHIFT

ADP198

VOUT

LOAD

09484-001

VOUT

LOAD

GENERAL DESCRIPTION

The ADP198 is a high-side load switch designed for operation
between 1.65 V and 6.5 V that is protected against reverse
current flow from output to input. A load switch provides power
domain isolation, thereby helping to keep subsystems isolated and
powered independently and enabling reduced power consumption.
The ADP198 contains a low on-resistance P-channel MOSFET
that supports more than 1 A of continuous load current. The
low 2.5 μA quiescent current and ultralow shutdown current
make the ADP198 ideal for battery-operated portable

Figure 2. LFCSP

equipment. The built-in level shifter for enable logic makes the

ADP198 compatible with modern processors and general-purpose

input/output (GPIO) controllers. The LFCSP version also allows
the user to program the start-up time to control the inrush
current at turn on.

The ADP198 is available in an ultrasmall 1 mm × 1 mm, 4-ball,

0.5 mm pitch WLCSP. An 8-lead, 2 mm × 2 mm × 0.55 mm,

0.5 mm pitch LFCSP is also available.

09484-002

Rev. D

Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone] www.analog.com
Fax: [phone] ©2011–2012 Analog Devices, Inc. All rights reserved.

ADP198 Data Sheet

TABLE OF CONTENTS

Features .............................................................................................. 1

Applications ....................................................................................... 1

Typical Application Circuits ............................................................ 1

General Description ......................................................................... 1

Revision History ............................................................................... 2

Specifications ..................................................................................... 3

Absolute Maximum Ratings ....................................................... 5

Thermal Data ................................................................................ 5

Thermal Resistance ...................................................................... 5

ESD Caution .................................................................................. 5

Pin Configurations and Function Descriptions ........................... 6

REVISION HISTORY

6/12—Rev. C to Rev. D

Changes to Table Headings in Table 6 ......................................... 14

Added Text to Diode OR’ing Applications Section .................... 15

Updated Outline Dimensions ....................................................... 16

4/12—Rev. B to Rev. C

Changes to VOUT Time Parameters ............................................. 3

11/11—Rev. A to Rev. B

Changes to WLCSP Turn-On Delay Time Parameter ................. 3

Changes to Ordering Guide .......................................................... 16

10/11—Rev. 0 to Rev. A

Change to Features Section ............................................................. 1

Changes to Table 1, Specifications Section ................................... 3

Change to Ground Current Section ............................................. 12

Changes to Enable Feature Section .............................................. 13

Updated Outline Dimensions ....................................................... 16

10/11—Revision 0: Initial Version

Typical Performance Characteristics ..............................................8

Theory of Operation ...................................................................... 11

Applications Information .............................................................. 12

Ground Current .......................................................................... 12

Enable Feature ............................................................................ 13

Timing.......................................................................................... 14

Diode OR’ing Applications ....................................................... 15

Packaging and Ordering Information ......................................... 16

Outline Dimensions ................................................................... 16

Ordering Guide .......................................................................... 16

Rev. D | Page 2 of 16

Data Sheet ADP198

High

VIH

VIN ≤ 5 V, TJ = −40°C to +85°C

1.2

V

VIN = 1.65 V, I

= 200 mA, VEN = 1.5 V

180 mΩ

VIN = 1.65 V, I

= 200 mA, VEN = 1.5 V

200 mΩ

VIN = 3.6 V, I

= 200 mA, VEN = 1.5 V, C

= 1 μF; SEL0 = H, SEL1 = H

1100

μs

SPECIFICATIONS

VIN = 2.8 V, EN = VIN, I

Table 1.

Parameter Symbol Test Conditions/Comments Min Typ Max Unit

INPUT VOLTAGE RANGE VIN TJ = −40°C to +85°C 1.65 6.5 V
EN INPUT

Threshold

5 V < VIN, TJ = −40°C to +85°C 1.3 V
Low VIL 1.65 V ≤ VIN ≤ 6.5 V, TJ = −40°C to +85°C 0.43 V

Pull-Down Current IEN 500 nA

REVERSE BLOCKING

V

Current VEN = 0, VIN = 0, V

OUT

VEN = 0, VIN = 0, V
Hysteresis |VIN − V

CURRENT

Quiescent Current IQ I
VIN = V
VIN = V

Off State Current I
EN = GND, TJ = −40°C to +85°C 2 µA
EN = GND, V
VIN to VOUT RESISTANCE RDSON

WLCSP VIN = 5 V, I

VIN = 3.3 V, I
VIN = 2.8 V, I
VIN = 1.8 V, I

LFCSP VIN = 5 V, I
VIN = 3.3 V, I
VIN = 2.8 V, I
VIN = 1.8 V, I

VOUT TIME

WLCSP

Turn-On Delay Time t

ADP198ACBZ-11-R7 VIN = 3.6 V, I

LFCSP

Turn-On Delay Time t
VIN = 3.6 V, I
VIN = 3.6 V, I

= 200 mA, TA = 25°C, unless otherwise noted.

OUT

= 6.5 V 7 µA

OUT

= 6.5 V, TJ = −40°C to +85°C 13 µA

OUT

| 75 mV

OUT

= 0 mA, TJ = −40°C to +85°C, includes EN pull-down current

OUT

= 2.8 V 2.5 µA

OUT

= 6.5 V 20 µA

OUT

EN = GND 1.1 µA

OFF

= 0 V, TJ = −40°C to +85°C 2 µA

OUT

= 200 mA, VEN = 1.5 V 40 mΩ

LOAD

= 200 mA, VEN = 1.5 V 50 80 mΩ

LOAD

= 200 mA, VEN = 1.5 V 60 mΩ

LOAD

= 200 mA, VEN = 1.5 V 130 mΩ

LOAD

LOAD

= 200 mA, VEN = 1.5 V 75 120 mΩ

LOAD

= 200 mA, VEN = 1.5 V 90 mΩ

LOAD

= 200 mA, VEN = 1.5 V 100 mΩ

LOAD

= 200 mA, VEN = 1.5 V 120 mΩ

LOAD

LOAD

VIN = 3.6 V, I

ON _D LY

VIN = 3.6 V, I

ON_DLY

= 200 mA, VEN = 1.5 V, C

LOAD

= 200 mA, VEN = 1.5 V, C

LOAD

= 200 mA, VEN = 1.5 V, C

LOAD

= 200 mA, VEN = 1.5 V, C

LOAD

= 200 mA, VEN = 1.5 V, C

LOAD

LOAD

= 1 μF 7 μs

LOAD

= 1 μF 450 μs

LOAD

= 1 μF; SEL0 = L, SEL1 = L 30 μs

LOAD

= 1 μF; SEL0 = H, SEL1 = L 200 μs

LOAD

= 1 μF; SEL0 = L, SEL1 = H 450 μs

LOAD

LOAD

Rev. D | Page 3 of 16

ADP198 Data Sheet

V

EN

V

OUT

TURN-ON

RISE

90%

10%

TURN-OFF

DELAY

TURN-OFF

FALL

TURN-ON

DELAY

09484-003

Timing Diagram

Figure 3. Timing Diagram

Rev. D | Page 4 of 16

Data Sheet ADP198

VIN to GND Pins

−0.3 V to +7 V

Stresses a bove those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.

ABSOLUTE MAXIMUM RATINGS

Table 2.

Parameter Rating

VOUT to GND Pins −0.3 V to +7 V
EN to GND Pins −0.3 V to +7 V
Continuous Drain Current

TA = 25°C ±1000 mA
TA = 85°C ±1000 mA

Storage Temperature Range −65°C to +150°C
Operating Junction Temperature Range −40°C to +125°C
Soldering Conditions JEDEC J-STD-020

THERMAL DATA

Absolute maximum ratings apply individually only, not in
combination. The ADP198 can be damaged if the junction
temperature limits are exceeded. Monitoring ambient temperature
does not guarantee that T
limits. In applications with high power dissipation and poor
thermal resistance, the maximum ambient temperature may
need to be derated.

In applications with moderate power dissipation and low
printed circuit board (PCB) thermal resistance, the maximum
ambient temperature can exceed the maximum limit as long
as the junction temperature is within specification limits. The
junction temperature (T
ambient temperature (T
(P

), and the junction-to-ambient thermal resistance of the

D

package (θ

).

JA

Maximum junction temperature (T
ambient temperature (T
formula

T

= TA + (PD × θJA)

J

is within the specified temperature

J

) of the device is dependent on the

J

), the power dissipation of the device

A

) is calculated from the

J

) and power dissipation (PD) using the

A

The junction-to-ambient thermal resistance (θ
is based on modeling and calculation using a 4-layer board. The
junction-to-ambient thermal resistance is highly dependent on
the application and board layout. In applications where high
maximum power dissipation exists, close attention to thermal
board design is required. The value of θ

may vary, depending on

JA

PCB material, layout, and environmental conditions. The speci­fied values of θ

are based on a 4-layer, 4 inch × 3 inch PCB. Refer

JA

to JESD 51-7 and JESD 51-9 for detailed information regarding
board construction. For additional information, see the AN-617

Application Note, MicroCSP™ Wafer Level Chip Scale Package.

Ψ

is the junction-to-board thermal characterization parameter

JB

with units of °C/W. The Ψ

of the package is based on modeling

JB

and calculation using a 4-layer board. The JESD51-12, Guidelines
for Reporting and Using Package Thermal Information, states that
thermal characterization parameters are not the same as thermal
resistances. Ψ

measures the component power flowing through

JB

multiple thermal paths rather than a single path as in thermal
resistance, θ
from the top of the package as well as radiation from the package,
factors that make Ψ

Maximum junction temperature (T
board temperature (T

. Therefore, ΨJB thermal paths include convection

JB

more useful in real-world applications.

JB

) is calculated from the

J

) and power dissipation (PD) using the

B

formula

T

= TB + (PD × ΨJB)

J

Refer to JESD51-8, JESD51-9, and JESD51-12 for more detailed
information about Ψ

.

JB

THERMAL RESISTANCE

θJA and ΨJB are specified for the worst-case conditions, that is, a
device soldered in a circuit board for surface-mount packages.

Table 3. Thermal Resistance

Package Type θJA θJC ΨJB Unit

4-Ball, 0.5 mm Pitch WLCSP 260 4 58.4 °C/W
8-Lead, 2 mm × 2 mm LFCSP 72.1 42.3 47.1 °C/W

ESD CAUTION

) of the package

JA

Rev. D | Page 5 of 16

ADP198 Data Sheet

VIN VOUT

1 2

EN

A

B

GND

TOP VIEW

(Not to S cale)

09484-004

B1

EN

Enable Input. Drive EN high to turn on the switch and drive EN low to turn off the switch.

PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS

Table 4. Pin Function Descriptions, WLCSP

Pin No. Mnemonic Description

A1 VIN Input Voltage.
A2 VOUT Output Voltage.

B2 GND Ground.

Figure 4. 4-Ball WLCSP Pin Configuration

Rev. D | Page 6 of 16

Data Sheet ADP198

1VOUT

NOTES

1. THE EXPOSED PAD IS CONNECTED TO THE SUBST RATE OF THEADP198
AND MUST BE CONNE CTED TO GROUND.

2VOUT
3GND

4SEL1

8 VIN
7 VIN

6 EN

5 SEL0

TOP VIEW

ADP198

(Not to S cale)

09484-005

7

VIN

Input Voltage. Connect Pin 7 and Pin 8 together.

Figure 5. 8-Lead LFCSP Pin Configuration

Table 5. Pin Function Descriptions, LFCSP

Pin No. Mnemonic Description

1 VOUT Output Voltage. Connect Pin 1 and Pin 2 together.
2 VOUT Output Voltage. Connect Pin 1 and Pin 2 together.
3 GND Ground.
4 SEL1 Select Turn-On Time.
5 SEL0 Select Turn-On Time.
6 EN Enable Input. Drive EN high to turn on the switch and drive EN low to turn off the switch.

8 VIN Input Voltage. Connect Pin 7 and Pin 8 together.
EP Exposed Pad. The exposed pad is connected to the substrate of the ADP198 and must be connected to ground.

Rev. D | Page 7 of 16

ADP198 Data Sheet

0

0.02

0.04

0.06

0.08

0.10

0.12

–40 –5 8525 125

RDS

ON

(Ω)

TEMPERATURE (°C)

I

LOAD

= 1000mA

I

LOAD

= 100mA

I

LOAD

= 200mA

I

LOAD

= 400mA

I

LOAD

= 800mA

09484-006

0

0.02

0.04

0.06

0.08

0.12

0.10

0.14

0.16

–40 –5 8525 125

RDS

ON

(Ω)

TEMPERATURE (°C)

I

LOAD

= 1000mA

I

LOAD

= 100mA

I

LOAD

= 200mA

I

LOAD

= 400mA

I

LOAD

= 800mA

09484-007

0

0.05

0.10

0.15

0.20

0.25

1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5

RDS

ON

(Ω)

VIN (V)

I

LOAD

= 1000mA

I

LOAD

= 100mA

I

LOAD

= 10mA

I

LOAD

= 200mA

I

LOAD

= 400mA

I

LOAD

= 800mA

09484-008

0

0.05

0.10

0.15

0.20

0.25

1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5

RDS

ON

(Ω)

VIN (V)

I

LOAD

= 1000mA

I

LOAD

= 100mA

I

LOAD

= 10mA

I

LOAD

= 200mA

I

LOAD

= 400mA

I

LOAD

= 800mA

09484-009

0

0.05

0.10

0.15

0.20

0.25

10 100 1000

VOLTAGE DROP (V)

LOAD (mA)

VIN = 1.65V
VIN = 1.80V
VIN = 2.10V
VIN = 2.50V
V

IN

= 2.80V
VIN = 3.30V
V

IN

= 3.80V
V

IN

= 4.50V
V

IN

= 5.50V
VIN = 6.50V

09484-010

0

0.05

0.10

0.15

0.20

0.25

10 100 1000

VOLTAGE DROP (V)

LOAD (mA)

VIN = 1.65V
VIN = 1.80V
V

IN

= 2.10V
V

IN

= 2.50V
VIN = 2.80V
V

IN

= 3.30V
V

IN

= 3.80V
V

IN

= 4.50V
V

IN

= 5.50V
VIN = 6.50V

09484-011

TYPICAL PERFORMANCE CHARACTERISTICS

Figure 6. RDSON vs. Temperature, WLCSP

Figure 7. RDSON vs. Temperature, LFCSP

Figure 9. RDSON vs. Input Voltage (VIN), LFCSP

Figure 10. Voltage Drop vs. Load Current, WLCSP

Figure 8. RDSON vs. Input Voltage (VIN), WLCSP

Figure 11. Voltage Drop vs. Load Current, LFCSP

Rev. D | Page 8 of 16

Data Sheet ADP198

CH1 200mA Ω

B

W

CH3 2.00V

B

W

A CH3 1.48V

3

1

2

CH2 1.00V

B

W

M40.0µs

T 10.20%

09484-012

INPUT CURRENT

OUTPUT VOLTAGE

ENABLE

CH1 200mA Ω

B

W

CH3 2.00V

B

W

A CH3 1.48V

2

1

3

CH2 2.00V

B

W

M20.0µs

T 10.20%

09484-013

INPUT CURRENT

OUTPUT VOLTAGE

ENABLE

CH1 500mA Ω

B

W

CH3 2.00V

B

W

A CH3 1.48V

2

1

3

CH2 5.00V

B

W

M10.0µs

T 10.20%

09484-014

INPUT CURRENT

OUTPUT VOLTAGE

ENABLE

0.0

0.5

1.0

1.5

2.0

2.5

3.0

–40 –5 25 85 125

GROUND CURRENT ( µ A)

TEMPERATURE (°C)

I

LOAD

= 1000mA

I

LOAD

= 100mA

I

LOAD

= 200mA

I

LOAD

= 400mA

I

LOAD

= 800mA

09484-015

0

2

4

6

8

10

12

14

16

18

20

1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5

GROUND CURRENT ( µ A)

VIN (V)

I

LOAD

= 1000mA

I

LOAD

= 100mA

I

LOAD

= 10mA

I

LOAD

= 200mA

I

LOAD

= 400mA

I

LOAD

= 800mA

09484-016

0

1

2

3

4

5

6

7

8

9

10

–40 –20 0 20 40 60 80 100 120

I

GND

SHUTDOWN CURRE NT (µA)

TEMPERATURE (°C)

VIN = 1.65V
VIN = 2.10V
VIN = 2.50V
VIN = 3.30V
VIN = 3.80V
VIN = 5.50V
VIN = 6.50V

09484-017

Figure 12. Typical Rise Time and Inrush Current,

V

= 1.8 V, I

IN

= 200 mA, Select Code 00

LOAD

Figure 13. Typical Rise Time and Inrush Current,

V

= 3.6 V, I

IN

= 200 mA, Select Code 00

LOAD

Figure 15. Ground Current vs. Temperature

Figure 16. Ground Current vs. Input Voltage (VIN)

Figure 14. Typical Rise Time and Inrush Current,

V

= 6.5 V, I

IN

= 200 mA, Select Code 00

LOAD

Figure 17. I

Shutdown Ground Current vs. Temperature, VOUT Open

GND

Rev. D | Page 9 of 16

ADP198 Data Sheet

0.01

0.10

1.00

10.00

–40 –20 0 20 40 60 80 100 120

I

GND

SHUTDOWN CURRE NT (µA)

TEMPERATURE (°C)

V

IN

= 1.65V

V

IN

= 2.10V

V

IN

= 2.50V

V

IN

= 3.30V

V

IN

= 3.80V

V

IN

= 5.50V

V

IN

= 6.50V

09484-018

0

0.20

0.40

0.60

0.80

1.00

1.20

1.40

1.60

1.80

2.00

–40 –20 0 20 40 60 80 100 120

I

OUT

SHUTDOWN CURRE NT (µA)

TEMPERATURE (°C)

VIN = 1.65V
VIN = 2.10V
VIN = 2.50V
VIN = 3.30V
VIN = 3.80V
VIN = 5.50V
VIN = 6.50V

09484-019

0

0.20

0.40

0.60

0.80

1.00

1.20

1.40

1.60

1.80

2.00

–40 –20 0 20 40 60 80 100 120

I

OUT

SHUTDOWN CURRE NT (µA)

TEMPERATURE (°C)

VIN = 1.65V
V

IN

= 2.10V
VIN = 2.50V
V

IN

= 3.30V
VIN = 3.80V
V

IN

= 5.50V
VIN = 6.50V

09484-020

0.01

0.10

1.00

10.00

–40 –20 0 20 40 60 80 100 120

I

GND

SHUTDOWN CURRE NT (µA)

TEMPERATURE (°C)

VIN = 1.65V
V

IN

= 2.10V
VIN = 2.50V
V

IN

= 3.30V
VIN = 3.80V
VIN = 5.50V
V

IN

= 6.50V

09484-021

Figure 18. Shutdown Ground Current vs. Temperature, V

Figure 19. I

Shutdown Current vs. Temperature, V

OUT

OUT

= 0 V

OUT

= 0 V

Figure 20. Reverse Input Shutdown Current vs. Temperature, VIN = 0 V

Figure 21. Reverse Shutdown Ground Current vs. Temperature, V

OUT

= 0 V

Rev. D | Page 10 of 16

Data Sheet ADP198

GND

EN

VIN

SEL0

SEL1

VOUT

ADP198

SLEW

RATE CONTROL

LEVEL SHIFT

REVERSE

POLARITY

PROTECTION

09484-022

THEORY OF OPERATION

The enable input incorporates a nominal 4 MΩ pull-down
resistor. SEL0 and SEL1 program the start-up time of the load
switch to reduce inrush current when the switch is turned on.

The reverse current protection circuitry prevents current from
flowing backwards through the ADP198 when the output voltage
is greater than the input voltage. A comparator senses the differ­ence between the input and output voltages. When the difference
between the input voltage and output voltage exceeds 75 mV,
the body of the PFET is switched to VOUT and turned off or

Figure 22. Functional Block Diagram

The ADP198 is a high-side PMOS load switch that is designed
for supply operation between 1.65 V and 6.5 V. The PMOS load
switch has a low on resistance of 50 mΩ at V

= 3.3 V and

IN

supports 1 A of continuous load current. The ADP198 features
low quiescent current at 2.5 μA typical using a 2.8 V supply.

opened. In other words, the gate is connected to VOUT.

The packaging is a space-saving 1 mm × 1 mm, 4-ball WLCSP.
The ADP198 is also available in a 2 mm × 2 mm × 0.55 mm,

0.5 mm pitch LFCSP.

Rev. D | Page 11 of 16

ADP198 Data Sheet

0

2

4

6

8

10

12

14

16

18

20

1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5

6.0 6.5

GROUND CURRENT (µA)

VIN (V)

I

LOAD

= 1000mA

I

LOAD

= 100mA

I

LOAD

= 10mA

I

LOAD

= 200mA

I

LOAD

= 400mA

I

LOAD

= 800mA

09484-023

0

10

20

30

40

50

60

0 1 2 3 4 5 6

GROUND CURRENT ( µ A)

ENABLE VOLTAGE (V)

09484-024

APPLICATIONS INFORMATION

GROUND CURRENT

The major source for ground current in the ADP198 is an internal
4 MΩ pull-down resistor on the enable pin. Figure 23 shows
the typical ground current when V

1.65 V to 6.5 V.

= VIN and varies from

EN

As shown in Figure 24, an increase in quiescent current can occur
when V
level shift circuitry as it translates a V
high. This increase is a function of the V

≠ VIN. This is caused by the CMOS logic nature of the

EN

signal ≥1.2 V to a logic

EN

− VEN delta.

IN

Figure 23. Ground Current vs. Load Current

Figure 24. Typical Ground Current when V

≠ V

EN

IN

Rev. D | Page 12 of 16

Data Sheet ADP198

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

0.45 0.50 0.55 0.60 0.65 0.70 0.75 0.80

V

OUT

(V)

ENABLE VOLTAGE (V)

VIN RISING
VIN FALLING

09484-025

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1 2 3 4 5 6 7

ENABLE THRES HOLD (V)

INPUT VOLTAGE (V)

EN RISE
EN FALL

09484-026

ENABLE FEATURE

The ADP198 uses the EN pin to enable and disable the VOUT
pin under normal operating conditions. As shown in Figure 25,
when a rising V
turns on. When a falling V
threshold, VOUT turns off.

voltage crosses the active threshold, VOUT

EN

voltage crosses the inactive

EN

The EN pin active/inactive thresholds derive from the V
therefore, these thresholds vary with the changing input voltage.
Figure 26 shows the typical EN active/inactive thresholds when
the input voltage varies from 1.65 V to 6.5 V.

Figure 26. Typical EN Thresholds vs. Input Voltage (V

voltage;

IN

)

IN

Figure 25. Typical EN Operation

As shown in Figure 25, the EN pin has hysteresis built in. This
prevents on/off oscillations that can occur due to noise on the
EN pin as it passes through the threshold points.

Rev. D | Page 13 of 16

ADP198 Data Sheet

CH1 200mA Ω

B

W

CH3 2.00V

B

W

A CH3 1.48V

2

1

3

CH2 2.00V

B

W

M20.0µs

T 10.20%

09484-027

INPUT CURRENT

OUTPUT VOLTAGE

ENABLE

CH1 200mA Ω

B

W

CH3 2.00V

B

W

A CH3 1.48V

2

1

3

CH2 2.00V

B

W

M40.0µs

T 10.20%

09484-028

INPUT CURRENT

OUTPUT VOLTAGE

ENABLE

CH1 200mA Ω

B

W

CH3 2.00V

B

W

A CH3 1.48V

2

1

3

CH2 2.00V

B

W

M100µs

T 10.20%

09484-029

INPUT CURRENT

OUTPUT VOLTAGE

ENABLE

CH1 200mA Ω

B

W

CH3 2.00V

B

W

A CH3 1.48V

2

1

3

CH2 2.00V

B

W

M200µs

T 10.20%

09484-030

INPUT CURRENT

OUTPUT VOLTAGE

ENABLE

TIMING

Turn -on delay is defined as the delta between the time that VEN
reaches >1.2 V and when V

ADP198 includes circuitry to have typical 10 µs turn-on delay at

3.6 V V

to limit the VIN inrush current.

IN

The rise time is defined as the delta between the time from
10% to 90% of V

reaching its final value. It is dependent on

OUT

the RC time constant where C = load capacitance (C
R = RDS

ON

||R

. Because RDSON is usually smaller than R

LOAD

an adequate approximation for RC is RDS
or load capacitor is not needed for the ADP198; however, capacitors
can be used to suppress noise on the board. If significant load
capacitance is connected, inrush current may be a concern.

Figure 27 through Figure 30 show the turn-on delay and output
rise time for each of the four settings on SEL0 and SEL1.

rises to ~10% of its final value. The

OUT

) and

LOAD

ON

× C

. An input

LOAD

LOAD

,

Figure 29. Typical Rise Time and Inrush Current,
C

= 1 µF, VIN = 3.6 V, I

LOAD

= 200 mA, Code 10

LOAD

Figure 27. Typical Rise Time and Inrush Current,
C

= 1 µF, VIN = 3.6 V, I

LOAD

Figure 28. Typical Rise Time and Inrush Current,
C

= 1 µF, VIN = 3.6 V, I

LOAD

= 200 mA, Code 00

LOAD

= 200 mA, Code 01

LOAD

Figure 30. Typical Rise Time and Inrush Current,
C

= 1 µF, VIN = 3.6 V, I

LOAD

= 200 mA, Code 11

LOAD

The turn-off time is defined as the delta between the time from
90% to 10% of V

reaching its final value. It is also dependent on

OUT

the RC time constant.

Table 6. Start-Up Time Pin Settings

SEL1 SEL0 Start-Up Time (μs)

0 0 30
0 1 200
1 0 450
1 1 1100

Rev. D | Page 14 of 16

Data Sheet ADP198

+

LOAD

6V

AC

V2

V

OUT

=

V2 – (I

LOAD

× RON)

VOUTVIN

EN

ADP198

09484-031

FORWARD VOLTAGE (V)

CURRENT (A)

SCHOTTKY

FORWARD
VOLTAGE

SLOPE =

1

R

ON

75mV (V

HYS

)

300mV

1A

09484-032

DIODE OR’ing APPLICATIONS

rectifier. For example, at 85°C, the reverse current of a Schottky
rectifier can be as high as 30 μA with only 2.5 V of reverse bias.

Figure 32 shows that about 75 mV of hysteresis built into the
circuitry that senses the voltage differential between the input
and output voltage. When the difference between the input
voltage and output voltage exceeds 75 mV, the ADP198 is
switched on.

Figure 31. ADP198 in a Typical Diode OR’ing Application

Figure 31 shows an application wherein an ac power supply and
battery are OR’ed together to provide a seamless transition from
the primary (ac) supply to the secondary (V2) supply when the
primary supply is disconnected. By connecting the enable input
of the ADP198 to V2, the transition from ac power to battery
power is automatic.

Figure 32 shows the forward voltage vs. the forward current
characteristics of a Schottky diode and the ADP198. The low on
resistance of the ADP198 makes it far superior to a Schottky
diode in diode OR’ing applications.

In addition to low on resistance, the ADP198 reverse leakage
current is much lower than a typical 1 A, 20 V Schottky

Figure 32. Forward Voltage vs. Forward Current of a Schottky

Diode and ADP198

Rev. D | Page 15 of 16

ADP198 Data Sheet

PACKAGING AND ORDERING INFORMATION

OUTLINE DIMENSIONS

0.990

0.950

0.910

12

PIN 1 INDEX

AREA

0.60

0.55

0.50

SEATING

PLANE

0.340

0.320

0.300

1.065

1.025

0.985

0.370

0.355

0.340

0.50

REF

COPLANARITY

0.05

0.270

0.240

0.210

BALL A1

IDENTIFIER

0.640

0.595

0.550

SEATING

PLANE

TOP VIEW

(BALL S IDE DOW N)

END VIEW

Figure 33. 4-Ball Wafer Level Chip Scale Package [WLCSP]

(CB-4-4)

Dimensions shown in millimeters

1.70

1.60

2.00

BSC SQ

TOP VIEW

0.30

0.25

0.20

0.425

0.350

0.275

0.05 MAX

0.02 NOM

0.20 REF

1.50

5

EXPOSED

4

BOTTOM VIEW

FOR PROPER CONNECTION OF
THE EXPOSED PAD, REFER TO
THE PIN CO NF IGURATI O N AND
FUNCTION DESCRIPTIONS
SECTION OF THIS DATA SHEET.

Figure 34. 8-Lead Lead Frame Chip Scale Package [LFCSP_UD]

2.00 × 2.00 mm Body, Ultra Thin, Dual Lead
(CP-8-10)

Dimensions shown in millimeters

BOTTOM VIEW

(BALL SIDE UP)

8

PAD

1

A

B

0.50 BSC

0.175 REF

1.10

1.00

0.90

P

N

I

N

I

D

R

(

4-13-2012-A

1

A

R

O

T

C

I

)

5

1

.

0

07-11-2011-B

ORDERING GUIDE

Temperature

Model1

Range

ADP198ACBZ-R7 −40°C to +85°C 30 4-Ball Wafer Level Chip Scale Package [WLCSP] CB-4-4 8C
ADP198ACBZ-11-R7 −40°C to +85°C 1000 4-Ball Wafer Level Chip Scale Package [WLCSP] CB-4-4 2W
ADP198ACPZ-R7 −40°C to +85°C

ADP198CP-EVALZ Evaluation Board

1

Z = RoHS Compliant Part.

©2011–2012 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the prop erty of their respective owners.

Start-Up
Time (μs) Package Description

Pin selectable:

8-Lead Lead Frame Chip Scale Package [LFCSP_UD] CP-8-10 LJL
30, 200, 450,
and 1000

D09484-0-6/12(D)

Rev. D | Page 16 of 16

Package
Option Branding

www.analog.com/ADP198