synchronized operation up to 1 MHz
Supply input range: 3.0 V to 18 V
Wide power stage input range: 1 V to 24 V
Interleaved operation results in smaller, low cost
input capacitor
All-N-channel MOSFET design for low cost
±0.85% accuracy at 0°C to 70°C
Soft start, thermal overload, current-limit protection
10 μA shutdown supply current
Internal linear regulator
Lossless R
Reverse current protection during soft start for handling
precharged outputs
Independent Power OK outputs
Voltage tracking for sequencing or DDR termination
Available in 5 mm × 5 mm, 32-lead LFCSP
APPLICATIONS
Telecommunications and networking systems
Medical imaging systems
Base station power
Set-top boxes
Printers
DDR termination
current-limit sensing
DSON
DC-to-DC Controller with Tracking
ADP1829
TYPICAL APPLICATION CIRCUIT
= 12
IN
390pF
4.53kΩ
180µF
IRLR7807Z
2kΩ
1kΩ
1.8V,
8A
560µF560µF
1.2V,
6A
180µF
IRLR7807Z
1µF
EN1
PV IN
TRK1
EN2
TRK2
VREG
BST2
0.47µF
2.2µH2.2µH
2kΩ
IRFR3709Z
2kΩ
4.53kΩ
BST1
DH2
DH1
ADP1829
SW2
SW1
2kΩ2kΩ
390pF
3900pF
CSL1
DL1
PGND1
FB1
COMP1
GND
Figure 1.
CSL2
DL2
PGND2
FB2
COMP2
FREQ
LDOSD
SYNC
0.47µF
IRFR3709Z
3900pF
06784-001
GENERAL DESCRIPTION
The ADP1829 is a versatile, dual, interleaved, synchronous
PWM buck controller that generates two independent output
rails from an input of 3.0 V to 18 V, with power input voltage
ranging from 1.0 V to 24 V. Each controller can be configured
to provide output voltages from 0.6 V to 85% of the input
voltage and is sized to handle large MOSFETs for point-of-load
regulators. The two channels operate 180° out of phase,
reducing stress on the input capacitor and allowing smaller, low
cost components. The ADP1829 is ideal for a wide range of
high power applications, such as DSP and processor core I/O
power, and general-purpose power in telecommunications,
medical imaging, PC, gaming, and industrial applications.
The ADP1829 operates at a pin-selectable, fixed switching
frequency of either 300 kHz or 600 kHz, minimizing external
component size and cost. For noise-sensitive applications, it can
also be synchronized to an external clock to achieve switching
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
frequencies between 300 kHz and 1 MHz. The ADP1829
includes soft start protection to prevent inrush current from the
input supply during startup, reverse current protection during
soft start for precharged outputs, as well as a unique adjustable
lossless current-limit scheme utilizing external MOSFET sensing.
For applications requiring power supply sequencing, the
ADP1829 also provides tracking inputs that allow the output
voltages to track during startup, shutdown, and faults. This
feature can also be used to implement DDR memory bus
termination.
The ADP1829 is specified over the −40°C to +125°C junction
temperature range and is available in a 32-lead LFCSP package.
IN = 12 V, ENx = FREQ = PV = VREG = 5 V, SYNC = GND, TJ = −40°C to +125°C, unless otherwise specified. All limits at temperature
extremes are guaranteed via correlation using standard statistical quality control (SQC). Typical values are at T
Table 1.
Parameter Conditions Min Typ Max Unit
POWER SUPPLY
IN Input Voltage PV = VREG (using internal regulator) 5.5 18 V
IN = PV = VREG (not using internal regulator) 3.0 5.5 V
IN Quiescent Current Not switching, I
= 0 mA 1.5 3 mA
VREG
IN Shutdown Current EN1 = EN2 = GND 10 20 μA
VREG Undervoltage Lockout Threshold VREG rising 2.4 2.7 3.0 V
VREG Undervoltage Lockout Hysteresis 0.125 V
ERROR AMPLIFIER
FB1, FB2 Regulation Voltage
= 25°C, TRK1, TRK2 > 700 mV
T
A
= 0°C to 85°C, TRK1, TRK2 > 700 mV
T
J
= −40°C to +125°C, TRK1, TRK2 > 700 mV
T
J
= 0°C to 70°C, TRK1, TRK2 > 700 mV
T
J
FB1, FB2 Input Bias Current 100 nA
Open-Loop Voltage Gain 70 dB
Gain-Bandwidth Product 20 MHz
COMP1, COMP2 Sink Current 600 μA
COMP1, COMP2 Source Current 120 μA
COMP1, COMP2 Clamp High Voltage 2.4 V
COMP1, COMP2 Clamp Low Voltage 0.75 V
LINEAR REGULATOR
VREG Output Voltage
IN = 7 V to 18 V, I
VREG Load Regulation I
VREG Line Regulation IN = 7 V to 18 V, I
= 25°C, I
T
A
= 0 mA to 100 mA, IN = 12 V −40 mV
VREG
= 20 mA
VREG
= 0 mA to 100 mA 4.75 5.0 5.25 V
VREG
= 20 mA 1 mV
VREG
VREG Current Limit VREG = 4 V 220 mA
VREG Short-Circuit Current VREG < 0.5 V 95 140 200 mA
IN to VREG Dropout Voltage
SS1, SS2 Pull-Up Resistance SS1, SS2 = GND 90 kΩ
SS1, SS2 Pull-Down Resistance SS1, SS2 = 0.6 V 6 kΩ
SS1, SS2 to FB1, FB2 Offset Voltage SS1, SS2 = 0 mV to 500 mV −45 mV
SS1, SS2 Pull-Up Voltage 0.8 V
TRACKING
TRK1, TRK2 Common-Mode Input
0 600 mV
Voltage Range
TRK1, TRK2 to FB1, FB2 Offset Voltage TRK1, TRK2 = 0 mV to 500 mV −5 +5 mV
TRK1, TRK2 Input Bias Current 100 nA
= 25°C.
A
597 600 603 mV
591 609 mV
588 612 mV
595 605 mV
4.85 5.0 5.15 V
Rev. 0 | Page 3 of 32
Page 4
ADP1829
www.BDTIC.com/ADI
Parameter Conditions Min Typ Max Unit
OSCILLATOR
Oscillator Frequency SYNC = FREQ = GND (fSW = f
SYNC = GND, FREQ = VREG (fSW = f
SYNC Synchronization Range
2
FREQ = GND, SYNC = 600 kHz to 1.2 MHz (fSW = f
FREQ = VREG, SYNC = 1.2 MHz to 2 MHz (fSW = f
SYNC Minimum Input Pulse Width 200 ns
CURRENT SENSE
CSL1, CSL2 Threshold Voltage Relative to PGND −30 0 +30 mV
CSL1, CSL2 Output Current CSL1, CSL2 = PGND 44 50 56 μA
Current Sense Blanking Period 100 ns
GATE DRIVERS
DH1, DH2 Rise Time CDH = 3 nF, V
DH1, DH2 Fall Time CDH = 3 nF, V
− VSW = 5 V 15 ns
BST
− VSW = 5 V 10 ns
BST
DL1, DL2 Rise Time CDL = 3 nF 15 ns
DL1, DL2 Fall Time CDL = 3 nF 10 ns
DH to DL, DL to DH Dead Time 40 ns
LOGIC THRESHOLDS
SYNC, FREQ, LDOSD Input High Voltage 2.2 V
SYNC, FREQ, LDOSD Input Low Voltage 0.4 V
SYNC, FREQ Input Leakage Current SYNC, FREQ = 0 V to 5.5 V 1 μA
LDOSD Pull-Down Resistance 100 kΩ
EN1, EN2 Input High Voltage IN = 3.0 V to 18 V 2.0 V
EN1, EN2 Input Low Voltage IN = 3.0 V to 18 V 0.8 V
EN1, EN2 Current Source EN1, EN2 = 0 V to 3.0 V −0.3 −0.6 −1.5 μA
EN1, EN2 Input Impedance to 5 V Zener EN1, EN2 = 5.5 V to 18 V 100 kΩ
FB1, UV2 Undervoltage Hysteresis 50 mV
POK1, POK2 Propagation Delay 8 μs
POK1, POK2 Off Leakage Current V
POK1, POK2 Output Low Voltage I
POK1, VPOK2
POK1, IPOK2
= 5.5 V 1 μA
= 10 mA 150 500 mV
UV2 Input Bias Current 10 100 nA
1
Not recommended to use the LDO in dropout when VIN < 5.5 V because of the dropout voltage. Connect IN to VREG when VIN < 5.5 V.
2
SYNC input frequency is 2× single-channel switching frequency. The SYNC frequency is divided by 2 and the separate phases were used to clock the controllers.
3
Guaranteed by design and not subject to production test.
) 240 300 370 kHz
OSC
) 480 600 720 kHz
OSC
/2) 300 600 kHz
SYNC
/2) 600 1000 kHz
SYNC
°C
°C
Rev. 0 | Page 4 of 32
Page 5
ADP1829
www.BDTIC.com/ADI
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter Rating
IN, EN1, EN2 −0.3 V to +20 V
BST1, BST2 −0.3 V to +30 V
BST1, BST2 to SW1, SW2 −0.3 V to +6 V
CSL1, CSL2 −1 V to +30 V
SW1, SW2 −2 V to +30 V
DH1 SW1 − 0.3 V to BST1 + 0.3 V
DH2 SW2 − 0.3 V to BST2 + 0.3 V
DL1, DL2 to PGND −0.3 V to PV + 0.3 V
PGND to GND ±2 V
LDOSD, SYNC, FREQ, COMP1,
−0.3 V to +6 V
COMP2, SS1, SS2, FB1, FB2, VREG,
PV, POK1, POK2, TRK1, TRK2
θJA 4-Layer
(JEDEC Standard Board)
1, 2
45°C/W
Operating Ambient Temperature −40°C < TA< +85°C
Operating Junction Temperature3−40°C < TJ < +125°C
Storage Temperature −65°C to +150°C
1
Measured with exposed pad attached to PCB.
2
Junction-to-ambient thermal resistance (θJA) of the package is based on
modeling and calculation using a 4-layer board. The junction-to-ambient
thermal resistance is application and board-layout dependent. In applications where high maximum power dissipation exists, attention to thermal
dissipation issues in board design is required. For more information, refer to
Application Note AN-772, A Design and Manufacturing Guide for the Lead Frame Chip Scale Package (LFCSP).
3
In applications where high power dissipation and poor package thermal
resistance are present, the maximum ambient temperature may have to be
derated. Maximum ambient temperature (T
maximum operating junction temperature (T
power dissipation of the device in the application (P
to-ambient thermal resistance of the part/package in the application (θJA)
and is given by the following equation: T
) is dependent on the
A_MAX
= 125oC), the maximum
J_MAX_OP
D_MAX
= T
A_MAX
J_MAX_OP
), and the junction-
– (θJA × P
D_MAX
).
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Feedback Voltage Input for Channel 1. Connect a resistor divider from the buck regulator output to GND and tie
the tap t
o FB1 to set the output voltage.
Frequency Synchronization Input. Accepts external signal between 600 kHz and 1.2 MHz or between 1.2 MHz
and 2 MH
z depending on whether FREQ is low or high, respectively. Connect SYNC to ground if not used.
3 FREQ Frequency Select Input. Low for 300 kHz or high for 600 kHz.
4 GND
5 UV2
Ground. Connect to a ground plane directly beneath the ADP1829. Tie the bottom of the feedback dividers to
this GND
Input to the POK2 Undervoltage and Overvoltage Compar
.
ators. For the default thresholds, connect UV2
directly to FB2. For some tracking applications, connect UV2 to an extra tap on the FB2 voltage divider string.
6 FB2
Voltage Feedback Input for Channel 2. Connect a resistor divider fr
om the buck regulator output to GND and
tie the tap to FB2 to set the output voltage.
7 COMP2 Error Amplifier Output for Channel 2. Connect an RC network from COMP2 to FB2 to compensate Channel 2.
8 TRK2
Tracking Input for Channel 2. To track a master voltage
, drive TRK2 from a voltage divider from the master
voltage. If the tracking function is not used, connect TRK2 to VREG.
9 SS2 Soft Start Control Input. Connect a capacitor from SS2 to GND to set the soft start period.
10 POK2
Open-Drain Power OK Output for Channel 2. Sinks current when UV2 is out of r
egulation. Connect a pull-up
resistor from POK2 to VREG.
11 BST2
Boost Capacitor Input for Channel 2. Powers the high-side ga
te driver DH2. Connect a 0.22 μF to 0.47 μF
ceramic capacitor from BST2 to SW2 and a Schottky diode from PV to BST2.
12 DH2 High-Side (Switch) Gate Driver Output for Channel 2.
13 SW2 Switch Node Connection for Channel 2.
14 CSL2
Current Sense Comparator Inverting Input for Channel 2. C
onnect a resistor between CSL2 and SW2 to set the
current-limit offset.
15 PGND2 Ground for Channel 2 Gate Driver. Connect to a ground plane directly beneath the ADP1829.
16 DL2 Low-Side (Synchronous Rectifier) Gate Driver Output for Channel 2.
17 PV
Positive Input Voltage for Gate Driver DL1 and Gate Driver DL2. C
onnect PV to VREG and bypass to ground with
a 1 μF capacitor.
18 DL1 Low-Side (Synchronous Rectifier) Gate Driver Output for Channel 1.
19 PGND1 Ground for Channel 1 Gate Driver. Connect to a ground plane directly beneath the ADP1829.
20 CSL1
Current Sense Comparator Inverting Input for Channel 1. C
The ADP1829 is a dual, synchronous, PWM buck controller
capable of generating output voltages down to 0.6 V and output
currents in the tens of amps. The switching of the regulators is
interleaved for reduced current ripple. It is ideal for a wide
range of applications, such as DSP and processor core I/O
supplies, general-purpose power in telecommunications,
medical imaging, gaming, PCs, set-top boxes, and industrial
controls. The ADP1829 controller operates directly from 3.0 V
to 18 V, and the power stage input voltage range is 1 V to 24 V,
which applies directly to the drain of the high-side external
power MOSFET. It includes fully integrated MOSFET gate
drivers and a linear regulator for internal and gate drive bias.
The ADP1829 operates at a fixed 300 kHz or 600 kHz switching
requency. The ADP1829 can also be synchronized to an
f
external clock to switch at up to 1 MHz per channel. The
ADP1829 includes soft start to prevent inrush current during
startup, as well as a unique adjustable lossless current limit.
The ADP1829 offers flexible tracking for startup and shutdown
equencing. It is specified over the −40°C to +85°C temperature
s
range and is available in a space-saving, 5 mm × 5 mm,
32-lead LFCSP.
INPUT POWER
The ADP1829 is powered from the IN pin up to 18 V. The
internal low dropout linear regulator, VREG, regulates the IN
voltage down to 5 V. The control circuits, gate drivers, and
external boost capacitors operate from the LDO output. Tie the
PV pin to VREG and bypass VREG with a 1 μF or greater
capacitor.
The ADP1829 phase shifts the switching of the two step-down
co
nverters by 180°, thereby reducing the input ripple current.
This reduces the size and cost of the input capacitors. The input
voltage should be bypassed with a capacitor close to the highside switch MOSFETs (see the
s
ection). In addition, a minimum 0.1 F ceramic capacitor
should be placed as close as possible to the IN pin.
The VREG output is sensed by the undervoltage lockout
(UVL
O) circuit to be certain that enough voltage headroom
is available to run the controllers and gate drivers. As VREG
rises above about 2.7 V, the controllers are enabled. The IN
voltage is not directly monitored by UVLO. If the IN voltage is
insufficient to allow VREG to be above the UVLO threshold,
the controllers are disabled but the LDO continues to operate.
The LDO is enabled whenever either EN1 or EN2 is high, even
if VREG is below the UVLO threshold.
If the desired input voltage is between 3.0 V and 5.5 V, connect
t
he IN directly to the VREG and PV pins, and drive LDOSD
high to disable the internal regulator. The ADP1829 requires
that the voltage at VREG and PV be limited to no more than
5.5 V. This is the only application where the LDOSD pin is used,
Selecting the Input Capacitor
and it should otherwise be grounded or left open. LDOSD has
an internal 100 k pull-down resistor.
While IN is limited to 18 V, the switching stage can run from up
to
24 V and the BST pins can go to 30 V to support the gate drive.
This can provide an advantage, for example, in the case of high
frequency operation from a high input voltage. Dissipation on the
ADP1829 can be limited by running IN from a low voltage rail
while operating the switches from the high voltage rail.
START-UP LOGIC
The ADP1829 features independent enable inputs for each
channel. Drive EN1 or EN2 high to enable their respective
controllers. The LDO starts when either channel is enabled.
When both controllers are disabled, the LDO is disabled and
the IN quiescent current drops to about 10 A. For automatic
startup, connect EN1 and/or EN2 to IN. The enable pins are
18 V compliant, but they sink current through an internal
100 k resistor once the EN pin voltage exceeds about 5 V.
INTERNAL LINEAR REGULATOR
The internal linear regulator, VREG, is low dropout, meaning it
can regulate its output voltage close to the input voltage. It
powers up the internal control and provides bias for the gate
drivers. It is guaranteed to have more than 100 mA of output
current capability, which is sufficient to handle the gate drive
requirements of typical logic threshold MOSFETs driven at up
to 1 MHz. Bypass VREG with a 1 μF or greater capacitor.
Because the LDO supplies the gate drive current, the output of
VREG is s
switch and the boost capacitors recharge during each switching
cycle. The LDO has been optimized to handle these transients
without overload faults. Due to the gate drive loading, using the
VREG output for other auxiliary system loads is not
recommended.
The LDO includes a current limit well above the expected
max
short-circuit foldback to further limit the VREG current in the
event of a fault.
ubjected to sharp transient currents as the drivers
imum gate drive load. This current limit also includes a
OSCILLATOR AND SYNCHRONIZATION
The ADP1829 internal oscillator can be set to either 300 kHz or
600 kHz. Drive the FREQ pin low for 300 kHz; drive it high for
600 kHz. The oscillator generates a start clock for each
switching phase and also generates the internal ramp voltages
for the PWM modulation.
The SYNC input is used to synchronize the converter switching
f
requency to an external signal. The SYNC input should be
driven with twice the desired switching frequency because the
SYNC input is divided by 2 and the resulting phases are used to
clock the two channels alternately.
Rev. 0 | Page 13 of 32
Page 14
ADP1829
www.BDTIC.com/ADI
If FREQ is driven low, the recommended SYNC input
frequency is between 600 kHz and 1.2 MHz. If FREQ is driven
high, the recommended SYNC frequency is between 1.2 MHz
and 2 MHz. The FREQ setting should be carefully observed for
these SYNC frequency ranges, as the PWM voltage ramp scales
down from about 1.3 V based on the percentage of frequency
overdrive. Driving SYNC faster than recommended for the
FREQ setting results in a small ramp signal, which could affect
the signal-to-noise ratio and the modulator gain and stability.
When an external clock is detected at the first SYNC edge, the
ternal oscillator is reset and clock control shifts to SYNC. The
in
SYNC edges then trigger subsequent clocking of the PWM
outputs. The DH rising edges appear about 400 ns after the
corresponding SYNC edge, and the frequency is locked to the
external signal. Depending on the startup conditions of
Channel 1 and Channel 2, either Channel 1 or Channel 2 can be
the first channel synchronized to the rising edge of the SYNC
clock. If the external SYNC signal disappears during operation,
the ADP1829 reverts back to its internal oscillator and
experiences a delay of no more than a single cycle of the
internal oscillator.
ERROR AMPLIFIER
The ADP1829 error amplifiers are operational amplifiers. The
ADP1829 senses the output voltages through external resistor
dividers at the FB1 and FB2 pins. The FB pins are the inverting
inputs to the error amplifiers. The error amplifiers compare
these feedback voltages to the internal 0.6 V reference, and the
outputs of the error amplifiers appear at the COMP1 and
COMP2 pins. The COMP pin voltages then directly control the
duty cycle of each respective switching converter.
A series/parallel RC network is tied between the FB pins and
eir respective COMP pins to provide the compensation for
th
the buck converter control loops. A detailed design procedure
for compensating the system is provided in the
he Voltage Mode Buck Regulator section.
t
The error amplifier outputs are clamped between a lower limit
of
about 0.7 V and a higher limit of about 2.4 V. When the
COMP pins are low, the switching duty cycle goes to 0%, and
when the COMP pins are high, the switching duty cycle goes to
the maximum.
The SS and TRK pins are auxiliary positive inputs to the error
am
plifiers. Whichever has the lowest voltage, SS, TRK, or the
internal 0.6 V reference, controls the FB pin voltage and thus
the output. Therefore, if two or more of these inputs are close to
each other, a small offset is imposed on the error amplifier. For
example, if TRK approaches the 0.6 V reference, the FB sees
about 18 mV of negative offset at room temperature. For this
reason, the soft start pins have a built-in negative offset and
they charge to 0.8 V. If the TRK pins are not used, they should
be tied high to VREG.
Compensating
SOFT START
The ADP1829 employs a programmable soft start that reduces
input current transients and prevents output overshoot. The SS1
and SS2 pins drive auxiliary positive inputs to their respective
error amplifiers, thus the voltage at these pins regulate the
voltage at their respective feedback control pins.
Program soft start by connecting capacitors from SS1 and SS2
o GND. On startup, the capacitor charges from an internal
t
90 kΩ resistor to 0.8 V. The regulator output voltage rises with
the voltage at its respective soft start pin, allowing the output
voltage to rise slowly, reducing inrush current. See the information about
When a controller is disabled or experiences a current fault, the
so
ft start capacitor is discharged through an internal 6 k
resistor, so that at restart or recovery from fault, the output
voltage soft starts again.
Soft Start in the Applications Information section.
POWER OK INDICATOR
The ADP1829 features open-drain, Power OK outputs (POK1
and POK2) that sink current when their respective output
voltages drop, typically 8% below the nominal regulation
voltage. The POK pins also go low for overvoltage of typically
25%. Use this output as a logical power-good signal by
connecting pull-up resistors from POK1 and POK2 to VREG.
The POK1 comparator directly monitors FB1, and the threshold
is f
ixed at 550 mV for undervoltage and 750 mV for overvoltage. However, the POK2 undervoltage and overvoltage
comparator input is connected to UV2 rather than FB2. For the
default thresholds at FB2, connect UV2 directly to FB2.
In a ratiometric tracking configuration, however, Channel 2 can
e configured to be a fraction of a master voltage, and thus FB2
b
regulated to a voltage lower than the 0.6 V internal reference. In
this configuration, UV2 can be tied to a different tap on the
feedback divider, allowing a POK2 indication at an appropriate
output voltage threshold. See the
U
ndervoltage Threshold for Ratiometric Tracking section.
Setting the Channel 2
TRACKING
The ADP1829 features tracking inputs (TRK1 and TRK2) that
make the output voltages track another, master voltage. This is
especially useful in core and I/O voltage sequencing applications
where one output of the ADP1829 can be set to track and not
exceed the other, or in other multiple output systems where
specific sequencing is required.
The internal error amplifiers include three positive inputs, the
ternal 0.6 V reference voltage and their respective SS and TRK
in
pins. The error amplifiers regulate the FB pins to the lowest of
the three inputs. To track a supply voltage, tie the TRK pin to a
resistor divider from the voltage to be tracked. See the
a ck in g section.
Tr
Vo lt a ge
Rev. 0 | Page 14 of 32
Page 15
ADP1829
www.BDTIC.com/ADI
MOSFET DRIVERS
The DH1 and DH2 pins drive the high-side switch MOSFETs.
These are boosted 5 V gate drivers that are powered by
bootstrap capacitor circuits. This configuration allows the highside, N-channel MOSFET gate to be driven above the input
voltage, allowing full enhancement and a low voltage drop
across the MOSFET. The bootstrap capacitors are connected
from the SW pins to their respective BST pins. The bootstrap
Schottky diodes from the PV pins to the BST pins recharge the
bootstrap capacitors every time the SW nodes go low. Use a
bootstrap capacitor value greater than 100× the high-side
MOSFET input capacitance.
In practice, the switch node can run up to 24 V of input voltage,
and t
he boost nodes can operate more than 5 V above this to
allow full gate drive. The IN pin can be run from 3.0 V to 18 V.
This can provide an advantage, for example, in the case of high
frequency operation from very high input voltage. Dissipation on
the ADP1829 can be limited by running IN from a lower voltage
rail while operating the switches from the high voltage rail.
The switching cycle is initiated by the internal clock signal. The
h-side MOSFET is turned on by the DH driver, and the SW
hig
node goes high, pulling up on the inductor. When the internally
generated ramp signal crosses the COMP pin voltage, the switch
MOSFET is turned off and the low-side synchronous rectifier
MOSFET is turned on by the DL driver. Active break-beforemake circuitry, as well as a supplemental fixed dead time, are
used to prevent cross-conduction in the switches.
The DL1 and DL2 pins provide gate drive for the low-side
OSFET synchronous rectifiers. Internal circuitry monitors the
M
external MOSFETs to ensure break-before-make switching to
prevent cross-conduction. An active dead time reduction circuit
reduces the break-before-make time of the switching to limit
the losses due to current flowing through the synchronous
rectifier body diode.
The PV pin provides power to the low-side drivers. It is limited
o 5.5 V maximum input and should have a local decoupling
t
capacitor.
The synchronous rectifiers are turned on for a minimum time
f about 200 ns on every switching cycle in order to sense the
o
current. This and the nonoverlap dead times put a limit on the
maximum high-side switch duty cycle based on the selected
switching frequency. Typically, this is about 90% at 300 kHz
switching; at 1 MHz switching, it reduces to about 70%
maximum duty cycle.
Because the two channels are 180° out of phase, if one is operat-
g around 50% duty cycle, it is common for it to jitter when the
in
other channel starts switching. The magnitude of the jitter depends
somewhat on layout, but it is difficult to avoid in practice.
When the ADP1829 is disabled, the drivers shut off the external
M
OSFETs, so that the SW node becomes three-stated or
changes to high impedance.
CURRENT LIMIT
The ADP1829 employs a unique, programmable, cycle-by-cycle
lossless current-limit circuit that uses a small, ordinary, inexpensive resistor to set the threshold. Every switching cycle, the
synchronous rectifier turns on for a minimum time and the
voltage drop across the MOSFET R
off cycle to determine if the current is too high.
This measurement is done by an internal current-limit
co
mparator and an external current-limit set resistor. The
resistor is connected between the switch node (that is, the drain
of the rectifier MOSFET) and the CSL pin. The CSL pin, which
is the inverting input of the comparator, forces 50 A through
the resistor to create an offset voltage drop across it.
When the inductor current is flowing in the MOSFET rectifier,
i
ts drain is forced below PGND by the voltage drop across its
R
. If the R
DSON
external resistor, the inverting comparator input is similarly
forced below PGND and an overcurrent fault is flagged.
The normal transient ringing on the switch node is ignored for
s after the synchronous rectifier turns on, so the overcur-
100 n
rent condition must also persist for 100 ns in order for a fault to
be flagged.
When an overcurrent event occurs, the overcurrent comparator
p
revents switching cycles until the rectifier current has decayed
below the threshold. The overcurrent comparator is blanked for
the first 100 ns of the synchronous rectifier cycle to prevent
switch node ringing from falsely tripping the current limit. The
ADP1829 senses the current limit during the off cycle. When
the current-limit condition occurs, the ADP1829 resets the
internal clock until the overcurrent condition disappears. This
suppresses the start clock cycles until the overload condition is
removed. At the same time, the SS cap is discharged through a
6 k resistor. The SS input is an auxiliary positive input of the
error amplifier, so it behaves like another voltage reference. The
lowest reference voltage wins. Discharging the SS voltage causes
the converter to use a lower voltage reference when switching is
allowed again. Therefore, as switching cycles continue around
the current limit, the output looks roughly like a constant
current source due to the rectifier limit, and the output voltage
droops as the load resistance decreases. In the event of a short
circuit, the short circuit output current is the current limit set
by the R
overcurrent condition is removed, operation resumes in soft
start mode.
In the event of a short circuit, the ADP1829 also offers a
echnique for implementing a current-limit foldback with the
t
use of an additional resistor. See the Setting the Current Limit
s
ection for more information.
resistor and is monitored cycle by cycle. When the
CL
voltage drop exceeds the preset drop on the
DSON
is measured during the
DSON
Rev. 0 | Page 15 of 32
Page 16
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APPLICATIONS INFORMATION
SELECTING THE INPUT CAPACITOR
The input current to a buck converter is a pulse waveform. It is
zero when the high-side switch is off and approximately equal
to the load current when it is on. The input capacitor carries the
input ripple current, allowing the input power source to supply
only the dc current. The input capacitor needs sufficient ripple
current rating to handle the input ripple and also ESR that is
low enough to mitigate input voltage ripple. For the usual current
ranges for these converters, good practice is to use two parallel
capacitors placed close to the drains of the high-side switch
MOSFETs, one bulk capacitor of sufficiently high current rating
as calculated in Equation 1, along with 10 F of ceramic capacitor.
Select an input bulk capacitor based on its ripple current rating.
I
f both Channel 1 and Channel 2 maximum output load
currents are about the same, the input ripple current is less than
half of the higher of the output load currents. In this case, use
an input capacitor with a ripple current rating greater than half
of the highest load current.
L
I>
RIPPLE
If the Output 1 and Output 2 load currents are significantly
dif
ferent (if the smaller is less than 50% of the larger), then the
procedure in Equation 1 yields a larger input capacitor than
required. In this case, the input capacitor can be chosen as in
the case of a single phase converter with only the higher load
current, so first determine the duty cycle of the output with the
larger load current.
D =
In this case, the input capacitor ripple current is approximately
where I
is the maximum inductor or load current for the
L
channel and D is the duty cycle. Use this method to determine
the input capacitor ripple current rating for duty cycles between
20% and 80%.
For duty cycles less than 20% or greater than 80%, use an input
ca
pacitor with ripple current rating I
Selecting the Output LC Filter
The output LC filter attenuates the switching voltage, making
the output an almost dc voltage. The output LC filter characteristics determine the residual output ripple voltage.
Choose an inductor value such that the inductor ripple current
pproximately 1/3 of the maximum dc output load current.
is a
Using a larger value inductor results in a physical size larger
than is required, and using a smaller value results in increased
losses in the inductor and MOSFETs.
(1)
2
OUT
(2)
V
IN
(3)
)1(DDII
−≈
LRIPPLE
> 0.4 IL.
RIPPLE
Choose the inductor value using the equation
−
VV
IN
=
L
OUT
fI
L
SW
⎞
⎛
V
OUT
⎟
⎜
⎜
⎝
(4)
⎟
V
IN
⎠
where:
L is the ind
f
is the switching frequency.
SW
V
OUT
V
IN
ΔI
L
uctor value.
is the output voltage.
is the input voltage.
is the inductor ripple current, typically 1/3 of the maximum
dc load current.
Choose the output bulk capacitor to set the desired output voltage
r
ipple. The impedance of the output capacitor at the switching
frequency multiplied by the ripple current gives the output
voltage ripple. The impedance is made up of the capacitive
impedance plus the nonideal parasitic characteristics, the
equivalent series resistance (ESR), and the equivalent series
inductance (ESL). The output voltage ripple can be approximated with
OUT
⎛
⎜
ESRIV
L
⎜
⎝
1
++Δ=ΔESLf
Cf
8
SW
4
OUT
SW
⎞
⎟
(5)
⎟
⎠
where:
is the output ripple voltage.
V
Δ
OUT
is the inductor ripple current.
ΔI
L
ESR is the equivalent series resistance of the output capacitor
(or the parallel combination of ESR of all output capacitors).
ESL is the equivalent series inductance of the output capacitor
(or the parallel combination of ESL of all capacitors).
Note that the factors of 8 and 4 in Equation 5 would normally
or sinusoidal waveforms, but the ripple current waveform
be 2π f
in this application is triangular. Parallel combinations of different
types of capacitors, for example, a large aluminum electrolytic
in parallel with MLCCs, may give different results.
Usually, the impedance is dominated by ESR at the switching
requency, as stated in the maximum ESR rating on the
f
capacitor data sheet, so this equation reduces to
(6)
ESRIV
OUT
L
Electrolytic capacitors have significant ESL also, on the order of
5 nH to 20 nH, depending on type, size, and geometry. PCB
traces contribute some ESR and ESL as well. However, using the
maximum ESR rating from the capacitor data sheet usually
provides some margin such that measuring the ESL is not
usually required.
Rev. 0 | Page 16 of 32
Page 17
ADP1829
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)
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+
=
−+°=
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In the case of output capacitors where the impedance of the
ESR and ESL are small at the switching frequency, for instance,
where the output capacitor is a bank of parallel MLCC capacitors,
the capacitive impedance dominates and the ripple equation
reduces to
Δ
V
≈Δ
OUT
L
8
OUT
(7)
fC
SW
Make sure that the ripple current rating of the output capacitors
i
s greater than the maximum inductor ripple current.
During a load step transient on the output, the output capacitor
upplies the load until the control loop has a chance to ramp the
s
inductor current. This initial output voltage deviation due to a
change in load is dependent on the output capacitor characteristics.
Again, usually the capacitor ESR dominates this response, and
the V
value for I
in Equation 6 can be used with the load step current
OUT
.
L
SELECTING THE MOSFETS
The choice of MOSFET directly affects the dc-to-dc converter
performance. The MOSFET must have low on resistance
(R
) to reduce I2R losses and low gate-charge to reduce
DSON
switching losses. In addition, the MOSFET must have low
thermal resistance to ensure that the power dissipated in the
MOSFET does not result in overheating.
The power switch, or high-side MOSFET, carries the load
urrent during the PWM on-time, carries the transition loss of
c
the switching behavior, and requires gate charge drive to switch.
Typically, the smaller the MOSFET R
charge and vice versa. Therefore, it is important to choose a
high-side MOSFET that balances those two losses. The conduction
loss of the high-side MOSFET is determined by the equation
DSON
OUT
(8)
V
IN
2
RIP ≈
L
C
where:
is the conduction power loss.
P
C
R
is the MOSFET on resistance.
DSON
The gate charge losses are dissipated by the ADP1829 regulator
nd gate drivers and affect the efficiency of the system. The gate
a
charge loss is approximated by the equation
(9)
fQVP ≈
IN
G
SWG
where:
is the gate charge power.
P
G
Q
is the MOSFET total gate charge.
G
f
is the converter switching frequency.
SW
Making the conduction losses balance the gate charge losses
ually yields the most efficient choice.
us
, the higher the gate
DSON
Furthermore, the high-side MOSFET transition loss is
a
pproximated by the equation
fttIV
+
FRLIN
SW
P
where t
≈
T
and tF are the rise and fall times of the selected
R
2
(10)
MOSFET as stated in the MOSFET data sheet.
The total power dissipation of the high-side MOSFET is the
m of the previous losses.
su
(11)
D
PPPP
GC
T
where PD is the total high-side MOSFET power loss. This
dissipation heats the high-side MOSFET.
The conduction losses may need an adjustment to account for
e MOSFET R
th
MOSFET R
variation with temperature. Note that
DSON
increases with increasing temperature. The
DSON
MOSFET data sheet should list the thermal resistance of the
package, θ
coefficient of the R
, along with a normalized curve of the temperature
JA
. For the power dissipation estimated in
DSON
Equation 11, calculate the MOSFET junction temperature rise
over the ambient temperature of interest.
PθTT
(12)
J
Then calculate the new R
curve and the R
temperature coefficient (TC) of the R
alternate method to calculate the MOSFET R
temperature, T
DSON
D
JAA
from the temperature coefficient
DSON
specification at 25°C. A typical value of the
DSON
is 0.004/°C, so an
DSON
at a second
DSON
, is
J
TTCRTR
J
DSON
J
)]C25(1[C25@@°
(13)
Then the conduction losses can be recalculated and the
p
rocedure iterated once or twice until the junction temperature
calculations are relatively consistent.
The synchronous rectifier, or low-side MOSFET, carries the
uctor current when the high-side MOSFET is off. For high
ind
input voltage and low output voltage, the low-side MOSFET
carries the current most of the time, and therefore, to achieve
high efficiency, it is critical to optimize the low-side MOSFET
for small on resistance. In cases where the power loss exceeds
the MOSFET rating, or lower resistance is required than is
available in a single MOSFET, connect multiple low-side
MOSFETs in parallel. The equation for low-side MOSFET
power loss is
⎛
2
⎜
1RIP
DSON
−≈
⎜
⎝
L
LS
⎞
V
OUT
⎟
(14)
⎟
V
IN
⎠
where:
P
is the low-side MOSFET on resistance.
LS
R
is the parallel combination of the resistances of the low-
DSON
side MOSFETs.
Check the gate charge losses of the synchronous rectifier(s)
g the P
usin
equation (Equation 9) to be sure they are
G
reasonable.
Rev. 0 | Page 17 of 32
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SETTING THE CURRENT LIMIT
The current-limit comparator measures the voltage across the
low-side MOSFET to determine the load current.
The current limit is set through the current-limit resistor, R
The current sense pins, CSL1 and CSL2, source 50 A through
their respective R
. This creates an offset voltage of RCL multiplied
CL
by the 50 A CSL current. When the drop across the low-side
MOSFET R
is equal to or greater than this offset voltage, the
DSON
ADP1829 flags a current-limit event.
Because the CSL current and the MOSFET R
vary over
DSON
process and temperature, the minimum current limit should be
set to ensure that the system can handle the maximum desired
load current. To do this, use the peak current in the inductor,
which is the desired current-limit level plus the ripple current,
the maximum R
of the MOSFET at its highest expected
DSON
temperature, and the minimum CSL current.
RI
LPK
where
R=
CL
I
is the peak inductor current.
LPK
DSON
)( MAX
(15)
A44
In addition, the ADP1829 offers a technique for implementing
urrent-limit foldback in the event of a short circuit with the
a c
use of an additional resistor, as shown in Figure 25. Resistor R
is largely responsible for setting the foldback current limit during
a short circuit, and R
normal current limit. R
is mainly responsible for setting up the
HI
is lower than RHI. These current-limit
LO
sense resistors can be calculated by
R
)( MAXDSON
A44
V
OUT
R
MAXDSON
R
LO
(17)
A44)(−
LO
HI
PKFOLDBACK
=
I
LPK
R= (16)
R
where:
I
PKFOLDBACK
I
LPK
is the desired short circuit peak inductor current limit.
is the peak inductor current limit during normal operation
and is also used in Equation 15.
.
CL
Because the buck converters are usually running fairly high
current, PCB layout and component placement may affect the
current-limit setting. An iteration of the R
values may be required for a particular board layout and
MOSFET selection. If alternate MOSFETs are substituted at
some point in production, these resistor values may also need
an iteration.
FEEDBACK VOLTAGE DIVIDER
The output regulation voltage is set through the feedback
voltage divider. The output voltage is reduced through the
voltage divider and drives the FB feedback input. The regulation
threshold at FB is 0.6 V. The maximum input bias current into
FB is 100 nA. For a 0.15% degradation in regulation voltage and
with 100 nA bias current, the low-side resistor, R
LO
less than 9 kΩ, which results in 67 µA of divider current. For
R
BOT
would result in a reduction in output voltage accuracy due to
the input bias current at the FB pin, while lower values cause
increased quiescent current consumption. Choose R
the output voltage by using the following equation:
where:
R
TOP
R
BOT
V
OUT
V
FB
IN
ADP1829
DH
DL
CSL
Figure 25. Short Circuit Current Foldback Scheme
M1
M2
L
R
R
LO
HI
V
OUT
C
OUT
or RLO and RHI
CL
, needs to be
BOT
06784-035
, use 1 k to 10 k. A larger value resistor can be used, but
to set
TOP
⎛
OUT
⎜
=
RR
BOTTOP
⎜
V
⎝
⎞
−
VV
FB
⎟
(18)
⎟
FB
⎠
is the high-side voltage divider resistance.
is the low-side voltage divider resistance.
is the regulated output voltage.
is the feedback regulation threshold, 0.6 V.
Rev. 0 | Page 18 of 32
Page 19
ADP1829
f
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COMPENSATING THE VOLTAGE MODE BUCK
REGULATOR
Assuming the LC filter design is complete, the feedback control
system can then be compensated. Good compensation is critical
to proper operation of the regulator. Calculate the quantities in
GAIN
0dB
LC FILTER BODE PLOT
fLCf
–40dB/dec
Equation 19 through Equation 47 to derive the compensation
values. The goal is to guarantee that the voltage gain of the buck
converter crosses unity at a slope that provides adequate phase
margin for stable operation. Additionally, at frequencies above
the crossover frequency, f
, guaranteeing sufficient gain
CO
margin and attenuation of switching noise are important
secondary goals. For initial practical designs, a good choice for
the crossover frequency is 1/10 of the switching frequency, so
first calculate
SW
f= (19)
CO
10
This gives sufficient frequency range to design a compensation
t
hat attenuates switching artifacts, while also giving sufficient
PHASE
0°
–90°
control loop bandwidth to provide good transient response.
The output LC filter is a resonant network that inflicts two poles
pon the response at a frequency f
u
1
f
=
LC
2
(20)
LCπ
Generally speaking, the LC corner frequency is about two
ers of magnitude below the switching frequency, and
ord
therefore, about one order of magnitude below crossover. To
achieve sufficient phase margin at crossover to guarantee
stability, the design must compensate for the two poles at the
LC corner frequency with two zeros to boost the system phase
prior to crossover. The two zeros require an additional pole or
two above the crossover frequency to guarantee adequate gain
margin and attenuation of switching noise at high frequencies.
Depending on component selection, one zero might already be
enerated by the equivalent series resistance (ESR) of the output
g
capacitor. Calculate this zero corner frequency, f
f
=
ESR
1
(21)
CRπ
2
ESR
OUT
, so next calculate
LC
ESR
, as
–180°
Figure 26. LC Filter Bode Plot
To compensate the control loop, the gain of the system must be
brought back up so that it is 0 dB at the desired crossover
frequency. Some gain is provided by the PWM modulation itself.
⎛
A
=
MOD
⎜
log20
⎜
⎝
For systems using the internal oscillator, this becomes
A
MOD
log20
⎜
⎝
⎛
⎜
=
Note that if the converter is being synchronized, the ramp
volt
age, V
, is lower than 1.3 V by the percentage of
RAMP
frequency increase over the nominal setting of the FREQ pin.
V
RAMP
V3.1
=
Figure 26 shows a typical Bode plot of the LC filter by itself.
The gain of the LC filter at crossover can be linearly approxi-
ted from Figure 26 as
ma
The factor of 2 in the numerator takes into account that the
YNC frequency is divided by 2 to generate the switching
S
frequency. For example, if the FREQ pin is set high for the
AAA+=
FILTER
A
FILTER
≈ fCO, then add another 3 dB to account for the local
If f
ESR
ESRLC
⎞
×−=
⎟
⎜
f
LC
⎠
⎝
⎞
⎛
f
ESR
⎟
⎜
⎛
f
CO
⎟
⎜
logdB20logdB40
×−
(22)
⎟
⎜
f
ESR
⎠
⎝
600 kHz range and a 2 MHz SYNC signal is applied, the ramp
voltage is 0.78 V. This increases the gain of the modulator by
4.4 dB in this example.
difference between the exact solution and the linear approximation in Equation 22.
ESRfCO
A
–20dB/dec
V
IN
V
RAMP
V
IN
V
3.1
⎛
2
f
FREQ
⎜
⎜
f
SYNC
⎝
⎞
⎟
⎟
⎠
FILTER
Φ
FILTER
⎞
⎟
(23)
⎟
⎠
(24)
⎞
⎟
(25)
⎟
⎠
f
SW
FREQUENCY
06784-025
Rev. 0 | Page 19 of 32
Page 20
ADP1829
www.BDTIC.com/ADI
The rest of the system gain is needed to reach 0 dB at crossover.
The total gain of the system, therefore, is given by
AT = A
MOD
+ A
FILTER
+ A
(26)
COMP
where:
A
is the gain of the PWM modulator.
MOD
A
is the gain of the LC filter including the effects of
FILTER
the ESR zero.
A
is the gain of the compensated error amplifier.
COMP
Additionally, the phase of the system must be brought back up
t
o guarantee stability. Note from the bode plot of the filter that
the LC contributes −180° of phase shift. Additionally, because
the error amplifier is an integrator at low frequency, it contributes an initial −90°. Therefore, before adding compensation or
accounting for the ESR zero, the system is already down −270°.
To avoid loop inversion at crossover, or −180° phase shift, a
good initial practical design is to require a phase margin of 60°,
which is therefore an overall phase loss of −120° from the initial
low frequency dc phase. The goal of the compensation is to
boost the phase back up from −270° to −120° at crossover.
The two common compensation schemes used are sometimes
r
eferred to as Type II or Type III compensation, depending on
whether the compensation design includes two or three poles.
(Dominant-pole compensations, or single-pole compensation,
is referred to as Type I compensation, but unfortunately, it is not
very useful for dealing successfully with switching regulators.)
If the zero produced by the ESR of the output capacitor provides
ufficient phase boost at crossover, Type II compensation is
s
adequate. If the phase boost produced by the ESR of the output
capacitor is not sufficient, another zero is added to the
compensation network, and thus, Type III is used.
Figure 27, the location of the ESR zero corner frequency
In
g
ives significantly different net phase at the crossover frequency.
Use the following guidelines for selecting between Type II and
T
ype III compensators:
f
CO
If
If
f≤
ESRZ
f>
ESRZ
, use Type II compensation.
2
f
CO
, use Type III compensation.
2
LC FILTER BODE PLOT
PHASE CONTRIBUTI ON AT CROSSO VER
GAIN
PHASE
OF VARIOUS ESR ZERO CORNERS
f
f
f
ESR2
ESR1
0dB
0°
–90°
–180°
LC
–40dB/dec
–20dB/dec
Figure 27. LC Filter Bode Plot
ESR3
fCOf
Φ
1
Φ
Φ
f
SW
FREQUENCY
2
3
The following equations were used for the calculation of the
compensation components as shown in Figure 28 and Figure 29:
Z1
f+π=
Z2
f
P1
f
P2
=
2
=
2
=
2
(27)
CRfπ
I
Z
1
FF
TOP
1
CC
R
π
π
HFI
Z
CC
+
1
(30)
CR
FFFF
(28)
)(2
RRC
FF
(29)
HFI
1
where:
f
is the zero produced in the Type II compensation.
Z1
f
is the zero produced in the Type III compensation.
Z2
f
is the pole produced in the Type II compensation.
P1
f
in the pole produced in the Type III compensation.
P2
06784-026
Rev. 0 | Page 20 of 32
Page 21
ADP1829
www.BDTIC.com/ADI
Type II Compensator
–
1
S
L
O
G
P
E
f
Z
C
R
Z
EA
HF
VREF
–
1
S
L
O
P
E
f
P
C
I
COMP
TO PWM
VRAMP
0V
6784-027
FROM
V
OUT
(dB)
PHASE
–180°
–270°
R
TOP
R
BOT
Figure 28. Type II Compensation
If the output capacitor ESR zero frequency is sufficiently low (≤1/2
of the crossover frequency), use the ESR to stabilize the
regulator. In this case, use the circuit shown in
alculate the compensation resistor, R
C
Z
Figure 28.
, with the following
equation:
ffVR
R
TOP
=
Z
IN
COESRRAMP
(31)
2
fV
LC
where:
fCO is chosen to be 1/10 of f
V
is 1.3 V.
RAMP
SW.
Next choose the compensation capacitor to set the
f
mpensation zero,
co
, to the lesser of 1/4 of the crossover
Z1
frequency or 1/2 of the LC resonant frequency:
ff
f
Z
1
SWCO
404
1
===
(32)
CR
π
2
I
Z
or
f
LC
f
Z
1
2
Solving for C
=
I
Solving for C
=
I
Use the larger value of C
1
(33)
CR
π==2
I
Z
in Equation 32 yields
I
20
(34)
fRCπ
SW
Z
in Equation 33 yields
I
1
(35)
fRCπ
LC
Z
from Equation 34 or Equation 35.
I
Because of the finite output current drive of the error amplifier,
needs to be less than 10 nF. If it is larger than 10 nF, choose a
C
I
larger R
and recalculate RZ and CI until CI is less than 10 nF.
TOP
Next choose the high frequency pole, f
1
(36)
ff
=
P1
Because C
P1
Solving for C
HF
SW
2
<< CI, Equation 29 is simplified to
HF
1
(37)
CRfπ=2
HF
Z
in Equation 36 and Equation 37 yields
HF
1
=
(38)
RfCπ
SW
Z
Type III Compensator
–
1
G
S
L
O
PE
S
1
+
f
Z
C
HF
R
C
Z
FF
EA
VREF
FROM
V
OUT
(dB)
–90°
PHASE
–270°
R
FF
R
TOP
R
BOT
Figure 29. Type III Compensation
If the output capacitor ESR zero frequency is greater than 1/2 of
the crossover frequency, use Type III compensator as shown in
Figure 29. Set the poles and zeros as follows:
1
(39)
fff
==
P2P1
ff
Z2Z1
SW
2
ff
SWCO
====
404
or
f
ff
LC
ZZ
21
2
1
===
CR
π
2
Z
Use the lower zero frequency from Equation 40 or Equation 41.
alculate the compensator resistor, R
C
ffVR
R
TOP
=
Z
Next calculate C
=
I
RAMP
IN
.
I
1
fRCπ2
Z1Z
CO
Z1
(42)
2
fV
LC
(43)
, to be 1/2 of fSW.
P1
E
P
O
L
–
1
S
L
O
P
E
f
P
C
I
COMP
1
CR
π
2
Z
TO PWM
VRAMP
0V
6784-028
(40)
I
(41)
I
.
Z
Rev. 0 | Page 21 of 32
Page 22
ADP1829
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Because of the finite output current drive of the error amplifier,
needs to be less than 10 nF. If it is larger than 10 nF, choose a
C
I
larger R
Because C
and recalculate RZ and CI until CI is less than 10 nF.
TOP
<< CI, combining Equation 29 and Equation 39
HF
yields
1
=
HF
Next, calculate the feedforward capacitor, C
R
, then Equation 28 is simplified to
TOP
=
Z2
Solving C
where f
in Equation 45 yields
FF
=
FF
is obtained from Equation 40 or Equation 41.
Z2
The feedforward resistor, RFF, c
E
quation 30 and Equation 39
=
FF
(44)
RfCπ
SW
Z
. Assume RFF <<
FF.
1
(45)
RCfπ2
FF
TOP
1
(46)
fRCπ2
Z2TOP
an be calculated by combining
1
(47)
fCRπ
FF
SW
Check that the calculated component values are reasonable. For
nstance, capacitors smaller than about 10 pF should be avoided.
i
In addition, the ADP1829 error amplifier has finite output
current drive, so R
values less than 3 k and CI values greater
Z
than 10 nF should be avoided. If necessary, recalculate the
compensation network with a different starting value of R
is too small and CI is too big, start with a larger value of R
If R
Z
TOP
TOP
.
.
This compensation technique should yield a good working
solution.
In general, aluminum electrolytic capacitors have high ESR, and
Type II compensation is adequate. However, if several aluminum
a
electrolytic capacitors are connected in parallel, producing a low
effective ESR, then Type III compensation is needed. In addition,
ceramic capacitors have very low ESR, in the order of a few
milliohms. Type III compensation is needed for ceramic output
capacitors. Type III compensation offers better performance
than Type II in terms of more low frequency gain and more
phase margin and less high frequency gain at the cross-over
frequency.
For a more exact method or to optimize for other system
aracteristics, a number of references and tools are available
ch
from your Analog Devices, Inc. applications support team.
SOFT START
The ADP1829 uses an adjustable soft start to limit the output
voltage ramp-up period, thus limiting the input inrush current.
The soft start is set by selecting the capacitor, C
SS2 to GND. The ADP1829 charges C
to 0.8 V through an
SS
internal 90 k resistor. The voltage on the soft start capacitor
while it is charging is
, from SS1 and
SS
Rev. 0 | Page 22 of 32
t
⎞
RC
⎟
SS
−=
eV1V8.0 (48)
⎟
⎠
CSS
⎛
⎜
⎜
⎝
The soft start period ends when the voltage on the soft start pin
eaches 0.6 V. Substituting 0.6 V for V
r
and solving for the
SS
number of RC time constants,
t
SS
⎛
⎜
−=
e
1V8.0V6.0
⎜
⎝
(50)
RCt386.1=
SSSS
⎞
()
C
k90
⎟
SS
(49)
⎟
⎠
Because R = 90 k,
(51)
secF/8×=
where t
tC
SSSS
is the desired soft start time in seconds.
SS
VOLTAGE TRACKING
The ADP1829 includes a tracking feature that prevents an
output voltage from exceeding a master voltage. This is
especially important when the ADP1829 is powering separate
power supply voltages on a single integrated circuit, such as the
core and I/O voltages of a DSP or microcontroller. In these
cases, improper sequencing can cause damage to the load.
The ADP1829 tracking input is an additional positive input to
t
he error amplifier. The feedback voltage is regulated to the lower of
the 0.6 V reference or the voltage at TRK, so a lower voltage on
TRK limits the output voltage. This feature allows implementation
of two different types of tracking: coincident tracking, where
the output voltage is the same as the master voltage until the
master voltage reaches regulation, or ratiometric tracking, where
the output voltage is limited to a fraction of the master voltage.
In all tracking configurations, the master voltage should be
hig
her than the slave voltage.
Note that the soft start time setting of the master voltage should
b
e longer than the soft start of the slave voltage. This forces the
rise time of the master voltage to be imposed on the slave voltage.
If the soft start setting of the slave voltage is longer, the slave
comes up more slowly and the tracking relationship is not seen
at the output. The slave channel should still have a soft start
capacitor to give a small but reasonable soft start time to protect
in case of restart after a current-limit event.
V
OUT
R
ERROR
AMPLIFIER
COMP
FB
TRK
0.6V
SS
DETAIL VIEW OF
ADP1829
Figure 30. Voltage Tracking
R
R
TRKT
TRKB
TOP
R
BOT
MASTER
VOLTAGE
06784-029
Page 23
ADP1829
www.BDTIC.com/ADI
COINCIDENT TRACKING
The most common application is coincident tracking, used in
core vs. I/O voltage sequencing and similar applications.
Coincident tracking limits the slave output voltage to be the
same as the master voltage until it reaches regulation. Connect
the slave TRK input to a resistor divider from the master voltage
that is the same as the divider used on the slave FB pin. This
forces the slave voltage to be the same as the master voltage.
For coincident tracking, use R
where R
TOP
and R
are the values chosen in the Compensating
BOT
TRKT
= R
TOP
and R
TRKB
= R
BOT
,
the Voltage Mode Buck Regulator section.
MASTER VOLTAGE
SLAVE VOLTAGE
VOLTAGE
TIME
Figure 31. Coincident Tracking
06784-030
As the master voltage rises, the slave voltage rises identically.
Eventually, the slave voltage reaches its regulation voltage,
where the internal reference takes over the regulation while the
TRK input continues to increase and thus removes itself from
influencing the output voltage. To ensure that the output voltage
accuracy is not compromised by the TRK pin being too close in
voltage to the 0.6 V reference, make sure that the final value of
the master voltage is greater than the slave regulation voltage by
at least 10%, or 60 mV, as seen at the FB node, and the higher,
the better. A difference of 60 mV between TRK and the 0.6 V
reference produces about 3 mV of offset in the error amplifier,
or 0.5%, at room temperature, while 100 mV between them
produces only 0.6 mV or 0.1% offset.
RATIOMETRIC TRACKING
Ratiometric tracking limits the output voltage to a fraction of
the master voltage. For example, the termination voltage for
DDR memories, VTT, is set to half the VDD voltage.
MASTER VOLTAGE
For ratiometric tracking, the simplest configuration is to tie the
TRK pin of the slave channel to the FB pin of the master channel.
This has the advantage of having the fewest components, but
the accuracy suffers as the TRK pin voltage becomes equal to
the internal reference voltage and an offset is imposed on the
error amplifier of about −18 mV at room temperature.
A more accurate solution is to provide a divider from the
mas
ter voltage that sets the TRK pin voltage to be something
lower than 0.6 V at regulation, for example, 0.5 V. The slave
channel can be viewed as having a 0.5 V external reference
supplied by the master voltage.
Once this is complete, the FB divider for the slave voltage is
ned as in the Compensating the Voltage Mode Buck
desig
lator section, except to substitute the 0.5 V reference for
Regu
th
e V
voltage. The ratio of the slave output voltage to the
FB
master voltage is a function of the two dividers.
R
⎞
R
TOP
⎟
⎟
R
BOT
⎠
(52)
⎞
TRKT
⎟
⎟
R
TRKB
⎠
V
V
MASTER
OUT
⎛
⎜
1
+
⎜
⎝
=
⎛
⎜
1
+
⎜
⎝
Another option is to add another tap to the divider for the
mas
ter voltage. Split the R
resistor of the master voltage into
BOT
two pieces, with the new tap at 0.5 V when the master voltage is
in regulation. This saves one resistor, but be aware that Type III
compensation on the master voltage causes the feedforward
signal of the master voltage to appear at the TRK input of the
slave channel.
By selecting the resistor values in the divider carefully, Equation 52
hows that the slave voltage output can be made to have a faster
s
ramp rate than that of the master voltage by setting the TRK
voltage at the slave larger than 0.6 V and R
. Make sure that the master SS period is long enough (that
R
TRKT
greater than
TRKB
is, sufficiently large SS capacitor) such that the input inrush
current does not run into the current limit of the power supply
during startup.
SLAVE VOLTAGE
VOLTAGE
TIME
Figure 32. Ratiometric Tracking
6784-031
Rev. 0 | Page 23 of 32
Page 24
ADP1829
+
=
+
=
(
)
(
)
www.BDTIC.com/ADI
Setting the Channel 2 Undervoltage Threshold for
Ratiometric Tracking
If FB2 is regulated to a voltage lower than 0.6 V by configuring
T
RK2 for ratiometric tracking, the Channel 2 undervoltage
threshold can be set appropriately by splitting the top resistor in
the voltage divider, as shown in Figure 33. R
is the same as
BOT
calculated for the compensation in Equation 52, and
(53)
RRR+=
B
TOP
POK2
A
CHANNEL 2
OUTPUT
VOLTAGE
R
A
UV2
550mV
R
B
750mV
TO ERROR
AMPLIFI ER
Figure 33. Setting the Channel 2 Undervoltage Threshold
FB2
R
BOT
06784-032
The current in all the resistors is the same:
VV
V
FB
2
R
BOT
−
FBUV
22
= (54)
R
=
B
OUT
VV
−
UV
2
2
R
A
where:
is 600 mV.
V
UV2
is the feedback voltage value set during the ratiometric
V
FB2
tracking calculations.
is the Channel 2 output voltage.
V
OUT2
Solving for R
and RB,
A
−
VV
2
UV
2
BOT
BOT
OUTA
V
V
FB
−
VV
222FB
=
RR
A
=
RR
B
(55)
2
FBUV
(56)
THERMAL CONSIDERATIONS
The current required to drive the external MOSFETs comprises
the vast majority of the power dissipation of the ADP1829. The
on-chip LDO regulates down to 5 V, and this 5 V supplies the
drivers. The full gate drive current passes through the LDO and
is then dissipated in the gate drivers. The power dissipated on
the gate drivers on the ADP1829 is
(57)
)(
QQQQfVP++
IND
SW
where:
is the voltage applied to IN.
V
IN
is the switching frequency.
f
SW
Q numbers are the total gate charge specifications from the
selected MOSFET data sheets.
The power dissipation heats the ADP1829. As the switching
requency, the input voltage, and the MOSFET size increase, the
f
power dissipation on the ADP1829 increases. Care must be taken
not to exceed the maximum junction temperature. To calculate
the junction temperature from the ambient temperature and
power dissipation,
θPTT
(58)
J
The thermal resistance, θ
D
A
JA
, of the package is typically 40°C/W
JA
depending on board layout, and the maximum specified
junction temperature is 125°C, which means that at maximum
ambient of 85°C without airflow, the maximum dissipation
allowed is about 1 W.
A thermal shutdown protection circuit on the ADP1829 shuts
ff the LDO and the controllers if the die temperature exceeds
o
approximately 145°C, but this is a gross fault protection only
and should not be relied upon for system reliability.
2DL2DH1DL1DH
Rev. 0 | Page 24 of 32
Page 25
ADP1829
www.BDTIC.com/ADI
PCB LAYOUT GUIDELINES
In any switching converter, some circuit paths carry high dI/dt,
which can create spikes and noise. Other circuit paths are
sensitive to noise. Still others carry high dc current and can
produce significant IR voltage drops. The key to proper PCB
layout of a switching converter is to identify these critical paths
and arrange the components and copper area accordingly.
When designing PCB layouts, be sure to keep high current
loops small. In addition, keep compensation and feedback
components away from the switch nodes and their associated
components.
The following is a list of recommended layout practices for the
AD
P1829, arranged by decreasing order of importance:
•
The current waveform in the top and bottom FETs is a pulse
with very high dI/dt, so the path to, through, and from each
individual FET should be as short as possible and the two
paths should be commoned as much as possible. In designs
that use a pair of D-Pak or SO-8 FETs on one side of the
PCB, it is best to counter-rotate the two so that the switch
node is on one side of the pair and the high-side drain can
be bypassed to the low-side source with a suitable ceramic
bypass capacitor, placed as close as possible to the FETs in
order to minimize inductance around this loop through the
FETs and capacitor. The recommended bypass ceramic
capacitor values range from 1 F to 22 F depending upon
the output current. This bypass capacitor is usually
connected to a larger value bulk filter capacitor and should
be grounded to the PGND plane.
•
GND, VREG bypass, soft start capacitor, and the bottom
end of the output feedback divider resistors should be tied
to an (almost isolated) small AGND plane. All of these
connections should have connections from the pin to the
AGND plane that are as short as possible. No high current
or high dI/dt signals should be connected to this AGND
plane. The AGND area should be connected through one
wide trace to the negative terminal of the output filter
capacitors.
•
The PGND pin handles high dI/dt gate drive current
returning from the source of the low-side MOSFET. The
voltage at this pin also establishes the 0 V reference for the
overcurrent limit protection (OCP) function and the CSL
pin. A small PGND plane should connect the PGND pin
and the PVCC bypass capacitor through a wide and direct
path to the source of the low-side MOSFET. The placement
is critical for controlling ground bounce. The negative
of C
IN
terminal of C
the low-side MOSFET.
needs to be placed very close to the source of
IN
•
Avoid long traces or large copper areas at the FB and CSL
pins, which are low signal level inputs that are sensitive to
capacitive and inductive noise pickup. It is best to position
any series resistors and capacitors as closely as possible to
these pins. Avoid running these traces close and parallel to
high dI/dt traces.
•
The switch node is the noisiest place in the switcher circuit
with large ac and dc voltage and current. This node should
be wide to keep resistive voltage drop down. However, to
minimize the generation of capacitively coupled noise, the
total area should be small. Place the FETs and inductor all
close together on a small copper plane in order to minimize
series resistance and keep the copper area small.
Gate drive traces (DH and DL) handle high dI/dt, so tend to
•
produce noise and ringing. They should be as short and
direct as possible. If possible, avoid using feedthrough vias
in the gate drive traces. If vias are needed, it is best to use
two relatively large ones in parallel to reduce the peak
current density and the current in each via. If the overall
PCB layout is less than optimal, slowing down the gate drive
slightly can be very helpful to reduce noise and ringing. It is
occasionally helpful to place small value resistors (such as
5 or 10 Ω) in series with the gate leads, mainly DH traces
to the high-side FET gates. These can be populated with 0
resistors if resistance is not needed. Note that the added gate
resistance increases the switching rise and fall times, and
that also increases the switching power loss in the MOSFET.
•
The negative terminal of output filter capacitors should be
tied closely to the source of the low-side FET. Doing this
helps to minimize voltage difference between GND and
PGND at the ADP1829.
Generally, be sure that all traces are sized according to the
•
current that will be handled as well as their sensitivity in the
circuit. Standard PCB layout guidelines mainly address
heating effects of current in a copper conductor. These are
completely valid, but they do not fully cover other concerns
such as stray inductance or dc voltage drop. Any dc voltage
differential in connections between ADP1829 GND and the
converter power output ground can cause a significant
output voltage error because it affects converter output
voltage according to the ratio with the 600 mV feedback
reference. For example, a 6 mV offset between ground on
the ADP1829 and the converter power output causes a 1%
error in the converter output voltage.
Rev. 0 | Page 25 of 32
Page 26
ADP1829
www.BDTIC.com/ADI
•
LFCSP PACKAGE CONSIDERATIONS
The LFCSP package has an exposed die paddle on the bottom
that efficiently conducts heat to the PCB. To achieve the
optimum performance from the LFCSP package, give special
consideration to the layout of the PCB. Use the following layout
guidelines for the LFCSP package.
The pad pattern is given in Figure 36. The pad dimension
s
hould be followed closely for reliable solder joints while
maintaining reasonable clearances to prevent solder bridging.
•
The thermal pad of the LFCSP package provides a low
thermal impedance path to the PCB. Therefore, the PCB
must be properly designed to effectively conduct the heat
away from the package. This is achieved by adding thermal
vias to the PCB, which provide a thermal path to the inner
or bottom layers. See
p
attern. Note that the via diameter is small. This prevents
the solder from flowing through the via and leaving voids
in the thermal pad solder joint.
Note that the thermal pad is attached to the die substrate,
s
o the planes that the thermal pad is connected to must be
electrically isolated or connected to GND.
•
The solder mask opening should be about 120 microns
(4.7 mils) larger than the pad size, resulting in a minimum
60 microns (2.4 mils) clearance between the pad and the
solder mask.
Figure 36 for the recommended via
The paste mask for the thermal pad needs to be designed
for the maximum coverage to effectively remove the heat
from the package. However, due to the presence of thermal
vias and the large size of the thermal pad, eliminating voids
may not be possible. In addition, if the solder paste
coverage is too large, solder joint defects may occur.
Therefore, it is recommended to use multiple small
openings instead of a single big opening in designing the
paste mask. The recommended paste mask pattern is given
Figure 36. This pattern results in about 80% coverage,
in
which sh
package significantly.
•
The recommended paste mask stencil thickness is 0.125 mm.
A laser cut stainless steel stencil with trapezoidal walls
should be used.
•
A no clean, Type 3 solder paste should be used for mounting
the LFCSP package. In addition, a nitrogen purge during
the reflow process is recommended.
•
The package manufacturer recommends that the reflow
temperature not exceed 220°C and the time above liquid be
less than 75 seconds. The preheat ramp should be 3°C/sec
or lower. The actual temperature profile depends on the
board density; the assembly house must determine what
works best.
ould not degrade the thermal performance of the
The paste mask opening is typically designed to match the
•
pad size used on the peripheral pads of the LFCSP package.
This should provide a reliable solder joint as long as the
stencil thickness is about 0.125 mm.
Rev. 0 | Page 26 of 32
Page 27
ADP1829
V
V
www.BDTIC.com/ADI
APPLICATION CIRCUITS
The ADP1829 controller can be configured to regulate outputs
with loads of more than 20 A if the power components, such as
the inductor, MOSFETs and the bulk capacitors, are chosen
carefully to meet the power requirement. The maximum load
and power dissipation are limited by the powertrain components.
Figure 1 shows a typical application circuit that can drive an
output load of 8 A.
Figure 34 shows an application circuit that can drive 20 A loads.
Note that two low-side MOSFETs are needed to deliver the 20 A
load. The bulk input and output capacitors used in this example
are Sanyo OSCON™ capacitors, which have low ESR and high
current ripple rating. An alternative to the OSCON capacitors
= 5.5V TO 18
IN
are the polymer aluminum capacitors that are available from
other manufacturers such as United Chemi-con. Aluminum
electrolytic capacitors, such as Rubycon’s ZLG low ESR series,
can also be paralleled up at the input or output to meet the
ripple current requirement. Because the aluminum electrolytic
capacitors have higher ESR and much larger variation in
capacitance over the operating temperature range, a larger bulk
input and output capacitance is needed to reduce the effective
ESR and suppress the current ripple. Figure 34 shows that the
polymer aluminum or the aluminum electrolytic capacitors can
be used at the outputs.
Figure 34. Application Circuit with 20 A Output Loads
Rev. 0 | Page 27 of 32
Page 28
ADP1829
V
V
www.BDTIC.com/ADI
The ADP1829 can also be configured to drive an output load of
less than 1 A. Figure 35 shows a typical application circuit that
ives 1.5 A and 3 A loads in all multilayer ceramic capacitor
dr
(MLCC) solutions. Note that the two MOSFETs used in this
example are dual-channel MOSFETs in a PowerPAK® SO-8
= 3V TO 5.5
IN
package, which reduces cost and saves layout space. An
alternative to using the dual-channel SO-8 package is using two
single MOSFETs in SOT-23 or TSOP-6 packages, which are low
cost and small in size.
1.0V, 3A
C
OUT3
100µF
C
OUT2
47µF
1µF
10µF
1µF
×2
2.2µH
8.2nF
1µF
84.5Ω
f
OSC
M1 TO M4: DUAL -CHANNEL SO-8 IRF7331
L2: TOKO , FDV0602-2R2M
C
OUT2
1.33kΩ
2kΩ
= 600kHz
: MURATA, G RM31CR60J476M
0.22µF
M3
L2
M4
6.65kΩ
D2
4.12kΩ
1.5nF
PV I N
TRK1
TRK2
VREG
BST1
DH1
EN1
EN2
BST2
DH2
ADP1829
SW1
CSL1
DL1
PGND1
FB1
COMP1
GND
SW2
CSL2
DL2
PGND2
FB2
COMP2
FREQ
LDOSD
SYNC
AGND
L1: SUMIDA, CDRH5D28-2R5NC
C
, C
OUT1
OUT3
D1, D2: VISHAY BAT 54
M2
1µF
L1
2.5µH
2kΩ
PGND
10µF
×2
1kΩ
8.2nF
84.5Ω
D1
0.22µF
M1
1.4kΩ
120nF120nF
6.65kΩ
1.5nF
IN
: MURATA, GRM 31CR60J107M
1µF10µF
1.8V, 1.5A
C
OUT1
100µF
06784-034
Figure 35. Application Circuit with all Multilayer Ceramic Capacitors (MLCC)
Rev. 0 | Page 28 of 32
Page 29
ADP1829
www.BDTIC.com/ADI
OUTLINE DIMENSIONS
0.08
0.60 MAX
25
24
EXPOSED
PAD
(BOTTOM VIEW)
17
16
32
1
8
9
3.50 REF
PIN 1
INDICATOR
3.25
3.10 SQ
2.95
0.25 MIN
PIN 1
INDICATOR
1.00
0.85
0.80
12° MAX
SEATING
PLANE
5.00
BSC SQ
TOP
VIEW
0.80 MAX
0.65 TYP
0.30
0.23
0.18
COMPLIANT TO JEDEC STANDARDS MO-220-VHHD-2
4.75
BSC SQ
0.20 REF
0.05 MAX
0.02 NOM
0.60 MAX
0.50
BSC
0.50
0.40
0.30
COPLANARITY
Figure 36. 32-Lead Lead Frame Chip Scale Package [LFCSP_VQ]
5
mm × 5 mm Body, Very Thin Quad
(CP-32-2)
Dimensions shown in millimeters
ORDERING GUIDE
Model Temperature Range
ADP1829ACPZ-R7
1
Operating junction temperature range is −40°C to +125°C
2
Z = RoHS Compliant Part.
2
−40°C to +85°C 32-Lead Lead Frame Chip Scale Package [LFCSP_VQ] CP-32-2