Datasheet ADM1052JR Datasheet (Analog Devices)

Precision Dual Voltage
a
FEATURES Two Independent Controllers on One Chip Two 2.525 V Outputs Shutdown Inputs to Control Each Channel 2.5% Accuracy Over Line, Load, and Temperature Low Quiescent Current Low Shutdown Current Works with External N-Channel MOSFETs for Low Cost “Hiccup Mode” Fault Protection No External Voltage or Current Setting Resistors Small, 8-Lead SO Package
APPLICATIONS Desktop Computers Servers Workstations

FUNCTIONAL BLOCK DIAGRAM

V
ADM1052
V
CC
50A
BANDGAP
REFERENCE
Regulator Controller
ADM1052
GENERAL DESCRIPTION
The ADM1052 is a dual, precision, voltage regulator controller intended for power rail generation and active bus termination on personal computer motherboards. It contains a precision
1.2 V bandgap reference and two channels consisting of con­trol amplifiers driving external power devices. Each channel has a shutdown input to turn off amplifier output and “Hiccup Mode” protection circuitry for the external power device.
The ADM1052 operates from a 12 V supply. This gives suffi­cient headroom for the amplifiers to drive external N-channel MOSFETs, operating as source-followers, as the external series pass devices. This has the advantage that N-channel devices are cheaper than P-channel devices of similar performance, and the circuit is easier to stabilize than one using P-channel devices in a common-source configuration.
3.3V
CC
CONTROL
AMPLIFIER
FORCE 1
SENSE 1
100F
V
OUT1
2 100F
SHDN1
SHDN2
V
CC
50A
V
CC
POWER-ON
RESET
SHUTDOWN
CONTROL
SHUTDOWN
CONTROL
CLK/DELAY
GENERATOR
GND
COMPARATOR
COMPARATOR
REV. A
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
HICCUP
CONTROL
AMPLIFIER
FORCE 2
SENSE 2
HICCUP
CLOCK
OSCILLATOR
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 World Wide Web Site: http://www.analog.com Fax: 781/326-8703 © Analog Devices, Inc., 2001
3.3V
100F
V
OUT2
2 100F
(VCC = 12 V 6%, VIN = 3.3 V, TA = 0C to 70C, both channels, unless otherwise
ADM1052–SPECIFICATIONS
Parameter Min Typ Max Unit Test Conditions/Comments
OUTPUT VOLTAGE
Channel 1, Channel 2 2.525 V SHDN1, SHDN2 Floating
OUTPUT VOLTAGE ACCURACY –2.5 +2.5 % V
Load Regulation –5 +5 mV V Line Regulation –5 +5 mV V
CONTROL AMPLIFIER
Control Amplifier Open-Loop Gain 100 dB Control Amplifier Slew Rate 3 V/µs Closed-Loop Settling Time 5 µsI Turn-On Time 5 µs To 90% of Force High Output Level (C Sense Input Impedance Force Output Voltage Swing, V Force Output Voltage Swing, VF (Low) 2 V RL = 10 k to V
HICCUP MODE
Hiccup Mode Hold-Off Time 30 60 90 ms Figure 2 Hiccup Mode Threshold 0.8 × V Hiccup Comparator Glitch Immunity 100 µs Hiccup Mode On-Time 0.5 1.0 1.5 ms Hiccup Mode Off-Time 20 40 60 ms Power-On Reset Threshold 6 9 V
SHUTDOWN, SHDN1, SHDN2
Shutdown Input Low Voltage, V Shutdown Input High Voltage, V Supply Current, Normal Operation 2.4 4.0 mA Shutdown Inputs Floating Supply Current, Shutdown Mode 600 1000 µA Both Channels Shut Dow
NOTES
1
Guaranteed by design.
Specifications subject to change without notice.
1
(High) 10 V RL = 10 k to GND
F
IL
IH
2.0 V
noted. See Test Circuit.)
50 k
V
OUT
0.8 V
= 3.0 V to 3.6 V, I
IN
= 3.3 V, I
IN
= 3.0 V to 3.6 V, I
IN
= 10 mA to 2 A
O
OUT
CC
= 10 mA to 1 A
OUT
= 10 mA to 1 A
OUT
= 1 A
1
n
1
= 470 pF)
L
–2–
REV. A
ADM1052
TOP VIEW
(Not to Scale)
8
7
6
5
1
2
3
4
FORCE 2
SENSE 2
SHDN2
GND
V
CC
FORCE 1
SENSE 1
SHDN1
ADM1052
WARNING!
ESD SENSITIVE DEVICE

ABSOLUTE MAXIMUM RATINGS*

(TA = 25°C unless otherwise noted)
VCC to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 V
SHDN1, SHDN2 to GND . . . . . . . . –0.3 V to (V
+ 0.3 V)
CC
SENSE1, SENSE2 to GND . . . . . . . . . . . . –0.3 V to +5.5 V
FORCE1, FORCE2 . . . . . . . . Short-Circuit to GND or V
CC
Continuous Power Dissipation (TA = 70°C) . . . . . . . 650 mW
°
8-Lead SOIC . . . . . . . . . . . . (Derate 8.3 mW/
C above 70°C)
Operating Temperature Range
Commercial (J Version) . . . . . . . . . . . . . . . . . . 0°C to 70°C
Storage Temperature Range . . . . . . . . . . . . –65°C to +150°C
Lead Temperature (Soldering, 10 sec) . . . . . . . . . . . . 300°C
*This is a stress rating only and functional operation of the device at these or any
other conditions above those indicated in the operation sections of this specifica­tion is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect reliability.

THERMAL CHARACTERISTICS

8-Lead Small Outline Package: JA = 150°C/W

ORDERING GUIDE

Temperature Package Package
Model Range Description Option
ADM1052JR 0°C to 70°C 8-Lead SOIC SO-8
PIN FUNCTION DESCRIPTIONS
Pin No. Mnemonic Function
1 FORCE 2 Output of Channel 2 control amplifier to
gate of external N-channel MOSFET.
2 SENSE 2 Input from source of external MOSFET to
inverting input of Channel 2 control amplifier, via output voltage-setting feed­back resistor network.
3 SHDN2 Digital Input. Active-low shutdown control
with 50 µA internal pull-up. The output of Channel 2 control amplifier goes to ground when SHDN2 is taken low.
4 GND Device Ground Pin. 5 SHDN1 Digital Input. Active-low shutdown control
with 50 µA internal pull-up. The output of Channel 1 control amplifier goes to ground when SHDN1 is taken low.
6 SENSE 1 Input from source of external MOSFET
to inverting input of Channel 1 control amplifier, via output voltage-setting feedback resistor network.
7 FORCE 1 Output of Channel 2 control amplifier to
gate of external N-channel MOSFET.
8V
CC
12 V Supply.
LEAVE OPEN OR
CONNECT TO
LOGIC SIGNALS
IF SHUTDOWN
REQUIRED
SHDN1
SHDN2
12V
V
CC
ADM1052
GND
1F
FORCE 2
SENSE 2
PHD55N03LT
FORCE 1
SENSE 1
MTD3055VL
3.3V
3.3V
100F
V
OUT1
2 100F
100F
V
OUT2
2 100F
PIN CONFIGURATION
Figure 1. Test Circuit

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the ADM1052 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
REV. A
–3–
ADM1052
Tek Stop: 25.0MS/s 56Acqs
Stop:
Typical Performance Characteristics
[]
T
T
2.55
2.54
2.53
T
2
v
T
3
v
1
t
Ch1 500mV Ch2 20.0mV M 2.00s Ch1 3.53V
Ch1
Ch3 20.0mV
B
W
B
W
B
W
TPC 1. Line Transient Response, Channel 1 and Channel 2
2.536
2.535
2.534
2.533
– V
OUT
V
2.532
2.531
2.530
2.529
2.9
3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 VIN – V
TPC 2. Line Regulation, Channel 1
2.52
OUTPUT – V
2.51
2.50
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
0
CURRENT – A
TPC 4. Load Regulation, Channel 1
2.55
2.54
2.53
2.52
OUTPUT – V
2.51
2.50
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
0
CURRENT – A
TPC 5. Load Regulation, Channel 2
2.542
2.541
2.540
2.539
– V
OUT
V
2.538
2.537
2.536
2.535
2.9
3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 VIN – V
TPC 3. Line Regulation, Channel 2
–4–
0
10
20
30
40
50
RIPPLE REJECTION dB
60
70
100 1k 10k 100k 1M 10M
10
FREQUENCY – Hz
TPC 6. VCC Supply Ripple Rejection
REV. A
OUTPUT – V
2.544
2.542
2.540
2.538
2.536
2.534
Tek Stop: Single Seq 50.0MS/s
Stop:
1
t
[]
T
T
ADM1052
2.532
2.530
2.528 10 20 30 40 50 60 70 80 90
0
TEMPERATURE – C
TPC 7. Regulator Output Voltage vs. Temperature
Tek Stop: Single Seq 50.0MS/s
Stop:
1
t
[]
T
T
t
Ch1 20.0mV M 1.00s Ch1 –45.0mV
Ch1
B
W
t
Ch1 20.0mV M 1.00s Ch1 –40mV
Ch1
B
W
TPC 10. Transient Response Channel 2, 10 mA to 2 A Output Load Step
Tek Stop: Single Seq 50.0MS/s
Stop:
[]
T
t
1
T
t
Ch1 20.0mV M 1.00s Ch1 37.6mV
Ch1
B
W
TPC 8. Transient Response Channel 1, 10 mA to 2 A Output Load Step
Tek Stop: Single Seq 50.0MS/s
Stop:
1
t
Ch1 20.0mV M 1.00s Ch1 5.2mV
Ch1
[]
T
T
B
W
TPC 9. Transient Response Channel 1, 2 A to 10 mA Output Load Step
REV. A
TPC 11. Transient Response Channel 2, 2 A to 10 mA Output Load Step
Tek Stop: 10.0kS/s 0Acqs
Stop:
t
1
t
Ch1 10.0mV M 5.00s Ch1 800mV
Ch1
[]
T
T
B
W
t
TPC 12. Force Output In Hiccup Mode, Channel 1
–5–
ADM1052
GENERAL DESCRIPTION
The ADM1052 is a dual, precision, voltage regulator controller intended for power rail generation and active bus termination on personal computer motherboards. It contains a precision 1.2 V bandgap reference and two channels consisting of control amp­lifiers driving external power devices. Both channels have an output of nominally 2.525 V. Each channel has a shutdown input to turn off amplifier output and protection circuitry for the external power device.
The ADM1052 operates from a 12 V V disabled until V
climbs above the reset threshold (6 V–9 V). The
CC
supply. The output is
CC
output from the ADM1052 is used to drive external N-channel MOSFETs, operating as source-followers. This has the advan­tage that N-channel devices are cheaper than P-channel devices of similar performance, and the circuit is easier to stabilize than one using P-channel devices in a common-source configuration.
The external power devices are protected by a “Hiccup Mode” circuit that operates if the circuit goes out of regulation due to an output short-circuit. In this case the power device is pulsed on/off with a 1:40 duty cycle to limit the power dissipation until the fault condition is removed.

CIRCUIT DESCRIPTION

CONTROL AMPLIFIERS
The reference voltage is amplified and buffered by the control amplifiers and external MOSFETs, the output voltage of each channel being determined by the feedback resistor network between the sense input and the inverting input of the con­trol amplifier.
A power-on reset circuit disables the amplifier output until V
CC
has risen above the reset threshold (6 V–9 V).
Each amplifier output drives the gate of an N-channel power MOSFET, whose drain is connected to the unregulated supply input and whose source is the regulated output voltage, which is also fed back to the appropriate sense input of the ADM1052. The control amplifiers have high current-drive capability so that they can quickly charge and discharge the gate capacitance of the external MOSFET, thus giving good transient response to changes in load or input voltage.

SHUTDOWN INPUTS

Each channel has a separate shutdown input, which may be controlled by a logic signal and allows the output of the regula­tor to be turned on or off. If the shutdown input is held high or not connected, the regulator operates normally. If the shutdown input is held low, the enable input of the control amplifier is turned off and the amplifier output goes low, turning off the regulator.
“HICCUP MODE” FAULT PROTECTION
Hiccup mode fault protection is a simple method of protecting the external power device without the added cost of external sense resistors or a current sense pin on the ADM1052. In the event of a short-circuit condition at the output, the output voltage will fall. When the output voltage of a channel falls 20% below the nominal voltage, this is sensed by the hiccup com­parator and the channel will go into hiccup mode, where the enable signal to the control amplifier is pulsed on and off with a 1:40 duty cycle.
To prevent the device inadvertently going into hiccup mode during power-up or during channel enabling, the hiccup mode is held off for approximately 60 ms on both channels. By this time the output voltage should have reached its correct value. In the case of power-up, the hold-off period starts when V
reaches the
CC
power-on reset threshold of 6 V–9 V. In the case of channel enabling, the hold-off period starts when SHDN is taken high. Note that the hold-off timeout applies to both channels even if only one channel is disabled/enabled.
As the 3.3 V input to the drain of the MOSFET is not moni­tored, it should ideally rise at the same or a faster rate than V At the very least it must be available in time for V
to reach its
OUT
CC
.
final value before the end of the power-on delay. If the output voltage is still less than 80% of the correct value after the power­on delay, the device will go into hiccup mode until the output voltage exceeds 80% of the correct value during a hiccup mode on-period. Of course, if there is a fault condition at the output during power-up, the device will go into hiccup mode after the power-up delay and remain there until the fault condition is removed.
The effect of power-on delay is illustrated in Figure 2, which shows an ADM1052 being powered up with a fault condition. The output current rises to a very high value during the power­on delay, the device goes into hiccup mode, and the output is pulsed on and off at 1:40 duty cycle. When the fault condition is removed, the output voltage recovers to its normal value at the end of the hiccup mode off period.
The load current at which the ADM1052 will go into hiccup mode is determined by three factors:
• The input voltage to the drain of the MOSFET, V
• The output voltage V
• The on-resistance of the MOSFET, R
I
HICCUP
(–20%)
OUT
= (VIN – (0.8 × V
ON
OUT
))/R
IN
ON
It should be emphasized that the hiccup mode is not intended as a precise current limit but as a simple method of protecting the external MOSFET against catastrophic fault conditions such as output short circuits.
–6–
REV. A
12V SUPPLY
3.3V SUPPLY
TO EXTERNAL
MOSFET DRAIN
GATE DRIVE TO
EXTERNAL MOSFET
CHANNEL 1
OR CHANNEL 2
OUTPUT VOLTAGE
POR THRESHOLD
6V – 9V
V
TURN-ON
REF
THRESHOLD
MOSFET GATE
THRESHOLD
NORMAL OUTPUT VOLTAGE
HICCUP MODE
HOLD-OFF TIME
OUTPUT < 0.8  V
DEVICE
ENTERS
HICCUP MODE
REG
FAULT
CURRENT
ADM1052
FAULT REMOVED
CHANNEL 1
OR CHANNEL 2
OUTPUT CURRENT
2 AMPS
Figure 2. Power-On Reset and Hiccup Mode
APPLICATIONS INFORMATION
PCB LAYOUT
For optimum voltage regulation, the loads should be placed as close as possible to the source of the output MOSFETs and feedback to the sense inputs should be taken from a point as close to the loads as possible. The PCB tracks from the loads back to the sense inputs should be separate from the output tracks and not carry any load current.
12V
V
CC
FORCE 1
SENSE 1
V
3.3V
IN
FORCE 2
SENSE 2
GND
I
1
V
OUT1
LOAD 1 LOAD 2
I
2
V
OUT2
V
3.3V
IN
OFF ON
1:40 DUTY CYCLE
Similarly, the ground connection to the ADM1052 should be made as close as possible to the ground of the loads, and the ground track from the loads to the ADM1052 should not carry load current. Correct and incorrect layout practice is illustrated in Figure 3.
12V
V
CC
FORCE 1
SENSE 1
FORCE 2
SENSE 2
GND
I1 + I
LOAD 1
2
V
OUT1
V
OUT2
I
1
I
2
LOAD 2
VOLTAGE DROP BETWEEN OUTPUT AND LOAD
REV. A
CORRECT
VOLTAGE DROP
IN GROUND LEAD
INCORRECT
Figure 3. Correct and Incorrect Layout Practice
–7–
ADM1052
LEAVE OPEN OR
CONNECT TO
LOGIC SIGNALS
IF SHUTDOWN
REQUIRED
SHDN1
SHDN2
12V
V
CC
ADM1052
GND
1F
FORCE 1
SENSE 1
FORCE 2
SENSE 2
3.3V
3.3V
100F
V
OUT1
2 100F
100F
V
OUT2
2 100F
Figure 4. Typical Application Circuit

SUPPLY DECOUPLING

The supply to the drain of an external MOSFET should be decoupled as close as possible to the drain pin of the device, with a 100 µF capacitor to ground. The output from the source of the MOSFET should be decoupled as close as possible to the source pin of the device. Decoupling capacitors should be chosen to have a low Equivalent Series Resistance (ESR). With the MOSFETs specified and two 100 µF capacitors in parallel, the circuit will be stable for load currents up to 2 A. The V
pin of the ADM1052 should be
CC
decoupled with a 1 µF capacitor to ground, connected as close as possible to the V
and GND pins.
CC
In practice, the amount of decoupling required will depend on the application. PC motherboards are notoriously noisy environ­ments, and it may be necessary to employ distributed decoupling to achieve acceptable noise levels on the supply rails.

CHOICE OF MOSFET

As previously discussed, the load current at which an output goes into hiccup mode depends on the on-resistance of the external MOSFET. If the on-resistance is too low this current may be very high. While the Test Circuit (Figure 1) shows the use of the lower resistance PHD55N03LT from Philips on Channel 1 and the use of the higher resistance MTD3055VL from Motorola on Channel 2, the MTD3055VL is, in fact, suitable for both channels. Similarly, the PHB11N06LT from Philips is also suitable for both channels.

THERMAL CONSIDERATIONS

Heat generated in the external MOSFET must be dissipated and the junction temperature of the device kept within accept­able limits. The power dissipated in the device is, of course, the drain-source voltage multiplied by the load current. The required thermal resistance to ambient is given by
JA
= T
J(MAX)
T
AMB(MAX)
/(V
DS(MAX)
× I
OUT(MAX)
)
Surface-mount MOSFETs such as those specified must rely on heat conduction through the device leads and the PCB. One square inch of copper (645 sq. mm) gives a thermal resistance of around 60°C/W for a SOT-223 surface-mount package and 80°C/W for a SO-8 surface-mount package.
For higher power dissipation than can be accommodated by a surface-mount package D
2
PAK or TO-220 devices are recom­mended. These should be mounted on a heatsink with a thermal resistance low enough to maintain the required maximum junc­tion temperature.
C02127–0–1/01 (rev. A)
0.1574 (4.00)
0.1497 (3.80)
PIN 1
0.0098 (0.25)
0.0040 (0.10)
SEATING
OUTLINE DIMENSIONS
Dimensions shown in inches and (mm).
8-Lead Small Outline Package
(Narrow Body, SO-8)
0.1968 (5.00)
0.1890 (4.80)
85
0.0500 (1.27)
PLANE
0.2440 (6.20)
0.2284 (5.80)
41
BSC
0.0192 (0.49)
0.0138 (0.35)
0.0688 (1.75)
0.0532 (1.35)
0.0098 (0.25)
0.0075 (0.19)
–8–
0.0196 (0.50)
0.0099 (0.25)
8
0.0500 (1.27)
0
0.0160 (0.41)
PRINTED IN U.S.A.
45
REV. A
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