Operation from 400 MHz to 4000 MHz
Noise figure of 0.8 dB at 900 MHz
Requires few external components
Integrated active bias control circuit
Integrated dc blocking capacitors
Adjustable bias for low power applications
Single-supply operation from 3 V to 5 V
Gain of 21.5 dB at 900 MHz
OIP3 of 34.0 dBm at 900 MHz
P1dB of 21.0 dBm at 900 MHz
Small footprint LFCSP
Pin-compatible version with 20.8 dB gain available
GENERAL DESCRIPTION
The ADL5523 is a high performance GaAs pHEMT low noise
amplifier. It provides high gain and low noise figure for singledownconversion IF sampling receiver architectures as well as
direct-downconversion receivers.
The ADL5523 provides a high level of integration by incorporating
the active bias and the dc blocking capacitors, making it very
easy to use while not sacrificing design flexibility.
Low Noise Amplifier
ADL5523
FUNCTIONAL BLOCK DIAGRAM
ACTIVE
1VBIAS
BIAS
2RFIN
3NC
ADL5523
4NC
NC = NO CONNECT
Figure 1.
The ADL5523 is easy to tune, requiring only a few external
components. The device can support operation from 3 V to 5 V,
and the current draw can be adjusted with the external bias
resistor for applications requiring very low power consumption.
The ADL5523 comes in a compact, thermally enhanced, 3 mm ×
3 mm LFCSP and operates over the temperature range of
−40°C to +85°C.
A fully populated evaluation board is also available.
8VPOS
7RFOUT
6NC
5NC
06829-001
Rev. A
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
Updated Maximum Junction Temperature Unit (Table 4) ......... 5
10/08—Revision 0: Initial Version
Rev. A | Page 2 of 24
Page 3
ADL5523
SPECIFICATIONS
AC SPECIFICATIONS
TA = 25°C, R1 = 1.3 kΩ; parameters include matching circuit, matched for optimal noise, unless otherwise noted.
Table 1.
3 V 5 V
Parameter Conditions Min Typ Max Min Typ Max Unit
FREQUENCY = 900 MHz
Gain (S21) 21.0 21.5 dB
vs. Frequency ±50 MHz ±0.35 ±0.37 dB
vs. Temperature −40°C ≤ TA ≤ +85°C ±0.60 ±0.51 dB
Noise Figure1 0.8 0.8 dB
Output Third-Order Intercept (OIP3) Δf = 1 MHz, P
Output 1 dB Compression Point (P1dB) 17.8 21.0 dBm
Input Return Loss (S11) −7.5 −8.0 dB
Output Return Loss (S22) −10.5 −11.0 dB
Isolation (S12) −24.0 −25.5 dB
FREQUENCY = 1950 MHz
Gain (S21) 16.5 15.8 17.0 18.0 dB
vs. Frequency ±30 MHz ±0.06 ±0.08 dB
vs. Temperature −40°C ≤ TA ≤ +85°C ±0.50 ±0.47 dB
Noise Figure1 0.9 1.0 dB
Output Third-Order Intercept (OIP3) Δf = MHz, P
Output 1 dB Compression Point (P1dB) 17.7 21.2 dBm
Input Return Loss (S11) −9.0 −10.0 dB
Output Return Loss (S22) −17.0 −20.0 dB
Isolation (S12) −20.5 −21.5 dB
FREQUENCY = 2600 MHz
Gain (S21) 12.8 13.2 dB
vs. Frequency ±100 MHz ±0.35 ±0.36 dB
vs. Temperature −40°C ≤ TA ≤ +85°C ±0.45 ±0.44 dB
Noise Figure1 0.9 0.9 dB
Output Third-Order Intercept (OIP3) Δf = 1 MHz, P
Output 1 dB Compression Point (P1dB) 17.0 21.2 dBm
Input Return Loss (S11) −5.0 −5.0 dB
Output Return Loss (S22) −10.0 −10.0 dB
Isolation (S12) −21.5 −22.0 dB
FREQUENCY = 3500 MHz
Gain (S21) 10.6 11.0 dB
vs. Frequency ±100 MHz ±0.73 ±0.78 dB
vs. Temperature −40°C ≤ TA ≤ +85°C ±0.78 ±0.77 dB
Noise Figure1 1.0 1.0 dB
Output Third-Order Intercept (OIP3) Δf = 1 MHz, P
Output 1 dB Compression Point (P1dB) 17.3 20.1 dBm
Input Return Loss (S11) −11.0 −11.5 dB
Output Return Loss (S22) −10.0 −10.5 dB
Isolation (S12) −19.0 −19.5 dB
1
Noise figure de-embedded to first matching component on input side.
= 0 dBm per tone 28.0 34.0 dBm
OUT
= 0 dBm per tone 28.0 34.0 dBm
OUT
= 0 dBm per tone 30.0 35.0 dBm
OUT
= 0 dBm per tone 30.0 33.5 dBm
OUT
Rev. A | Page 3 of 24
Page 4
ADL5523
DC SPECIFICATIONS
Table 2.
3 V 5 V
Parameter Conditions
Supply Current 30 60 mA
vs. Temperature −40°C ≤ TA ≤ +85°C ±4 ±7 mA
DE-EMBEDDED S-PARAMETERS, VPOS = 3 V TO 5 V, RFIN = PORT 1, VPOS = PORT 2, RFOUT = PORT 3
Supply Voltage, VPOS 5.5 V
RF Input Level 7 dBm
RF Input Level (with 8 Ω Series Resistor on VPOS) 20 dBm
Internal Power Dissipation 500 mW
θJA (Junction to Air) 50°C/W
Maximum Junction Temperature 150°C
Operating Temperature Range −40°C to +85°C
Storage Temperature Range −65°C to +150°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
ESD CAUTION
Rev. A | Page 5 of 24
Page 6
ADL5523
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
1VBIAS
ADL5523
2RFIN
3NC
4NC
NOTES
1. NC = NO CONNECT .
2. CONNECT THE E X P OSED PAD TO A LOW
IMPEDANCE GROUND P LANE.
TOP VIEW
(Not to S cale)
EXPOSED PAD
8VPOS
7RFOUT
6NC
5NC
06829-002
Figure 2. Pin Configuration
Table 5. Pin Function Descriptions
Pin No. Mnemonic Description
1 VBIAS Internal DC Bias. This pin should be connected to VPOS through the R1 resistor.
2 RFIN RF Input. This is the input to the LNA.
3, 4, 5, 6 NC No Connection. No internal connection.
7 RFOUT RF Output.
8 VPOS
Supply Voltage. DC bias needs to be bypassed to ground using a low inductance capacitor. This pin is
also used for output matching. See the Basic Connections section.
9 (EPAD) Exposed Pad (EPAD) GND. Connect the exposed pad to a low impedance ground plane.
Rev. A | Page 6 of 24
Page 7
ADL5523
TYPICAL PERFORMANCE CHARACTERISTICS
900 MHz, VPOS = 5 V
Matched for optimal noise figure, external matching circuit included.
Figure 51. Supply Current vs. Temperature, 3 V and 5 V
VPOS = 5V
VPOS = 3V
TEMPERATURE ( °C)
06829-051
Rev. A | Page 15 of 24
Page 16
ADL5523
V
BASIC CONNECTIONS
The basic connections for operating the ADL5523 are shown in
Figure 52. Capacitor C5 provides the power supply decoupling.
Inductor L1 (Coilcraft 0403HQ or 0402HP series) and Capacitor C1
(Murata High-Q GJM series or equivalent) provide the input
impedance matching, and the output impedance matching is
provided by either L2 or C3. Resistor R1 is used to set the supply
current, and the value of R1 is indirectly proportional to the
supply current (that is, increasing the value of R1 reduces the
supply current). The recommended external components for
selected frequencies are listed in Table 7.
For 5 V applications where the input power exceeds the input
compression point of approximately 7 dBm, a series resistor
(R2) of at least 8 Ω, with a high power rating (0.2 W minimum),
should be inserted on the VPOS line to protect the device from
the input power overdrive. In this case, reduce Resistor R1 from
1.3 kΩ to 600 Ω to keep the supply current at around 60 mA.
With R2 = 8.2 Ω (Susumu RP1608S-8R2-F) and R1 = 600 Ω, the
gain and noise figure for the ADL5523 are mostly unchanged.
Tabl e 6 lists OIP3 and P1dB at selected frequencies. For 3 V
power supply applications, a series resistor is not necessary for
the expected input overdrive powers up to 20 dBm.
POSGND
R1
ADL5523
RFINRFOUT
L1
C1
1 VBIAS
2RFIN
3NC
4NC
Z1
Figure 52. ADL5523 Basic Connections
8VPOS
7RFOUT
6NC
5NC
TR1
TR2
W1
R2
C5
100nF
L2
C3
06829-052
Table 6. ADL5523 Performance at VPOS = 5 V, 25°C with
R2 = 8.2 Ω and R1 = 600 Ω
Figure 53 shows the schematic of the ADL5523 evaluation board.
The board is powered by a single supply, and dc bias can be
applied to the board through clip-on leads at VPOS and GND
or through a 2-pin connector, W1.
The evaluation board comes optimized at 1950 MHz from the
factory, but it can be easily modified to work at any frequency
between 400 MHz and 4 GHz. Tabl e 7 lists the recommended
components at various frequencies.
POSGND
R1
ADL5523
RFINRFOUT
L1
C1
1 VBIAS
2RFIN
3NC
4NC
Z1
8VPOS
7RFOUT
6NC
5NC
Figure 53. Evaluation Board Schematic
TR1
TR2
W1
R2
C5
100nF
L2
SOLDERING INFORMATION AND RECOMMENDED
Figure 55. Evaluation Board Layout (Bottom View)
06829-054
PCB LAND PATTERN
C4
DNP
C3
C2
0Ω
06829-152
Figure 56 shows the recommended land pattern for ADL5523.
To minimize thermal impedance, the exposed pad on the
package underside is soldered down to a ground plane. If
multiple ground layers exist, they are stitched together using
vias (a minimum of five vias is recommended). Pin 3 to Pin 6
can be left unconnected or can be connected to ground. For
more information on land pattern design and layout, refer to
the AN-772 Application Note, A Design and Manufacturing Guide for the Lead Frame Chip Scale Package (LFCSP).
2.03mm
1
8
0.5m
0.71mm
1.85mm
45
1.53mm
1.78mm
06829-055
Figure 56. Recommended Land Pattern
06829-053
Figure 54. Evaluation Board Layout (Top View)
Table 7. Recommended Components and Positions of Matching Components for Basic Connections Tuned for Optimal Noise
The Murata GJM High-Q series capacitor is recommended for C1.
2
The Coilcraft High Q 0403HQ or 0402HP inductors are recommended for L1 and L2.
3
If R2 = 8 Ω, reduce R1 to 600 Ω.
4
If R2 = 8 Ω, use a high power resistor (0.2 W rating minimum).
5
Note that at 3500 MHz, a capacitor, not an inductor, is used at L1.
2
L2
Size
0403)
3
R1
(Size
0603)
4
R2
(Size
0603)
TR1
(mm)
TR2
(mm)
C1
Position
C3
Position
Rev. A | Page 17 of 24
Page 18
ADL5523
TUNING THE ADL5523 FOR OPTIMAL NOISE FIGURE
The ADL5523 is a monolithic low noise amplifier (LNA) in a
3 mm × 3 mm LFCSP. The evaluation board, as shipped from
the factory, gives a noise figure of 0.9 dB over a bandwidth of
several hundred megahertz. The specific frequency where optimal
noise is reached depends on the tuning.
The bandwidth of the ADL5523 is 400 MHz to 4 GHz, although
noise figure degrades above 2.5 GHz as the gain begins to roll off.
This section is based on Analog Devices, Inc., lab measurements.
Although there are plots in which the Agilent Advanced Design
System (ADS) environment is used, the data in these plots come
entirely from Analog Devices lab measurements.
TUNING S22
Tuning of the LNA begins with S22 (output tuning). Tuning of
the LNA output is done by placing reactive components on the
bias line, referred to in the schematic in Figure 53 as VPOS.
On the LNA evaluation board, S22 tuning is achieved by either
the use of an inductor (L2) on the bias line or a shunt capacitor
(C3) on the bias line to ground. Typically, either L2 is required
or C3 but not both.
The evaluation board uses a slider on the bias line to make tuning
for S22 as easy as possible. The slider is an area of ground etch
adjacent to the bias line that is clear of solder mask. The bias
line in this area is also free of solder mask. This allows a capacitor
(C3) to be placed anywhere on the bias line to ground, which
provides easy and accurate tuning for S22.
Note that the PCB layout shows two capacitors, C3 and C4.
Typically, only one of these capacitors is needed for good
S22 tuning.
The slider is seen in the LNA PCB layout in Figure 57 as the
area near the red arrows to the right of the bias line. With a 0 Ω
resistor in place of L2, moving a 1 nF capacitor from the top to
the bottom effectively tunes S22 from 1400 MHz to 3500 MHz.
Tabl e 8 shows the component values and placement required for
S22 tuning from 800 MHz to 3200 MHz. For lower frequencies,
higher values of L2 can be used to tune S22, and for frequencies
from 3.2 GHz to 4.0 GHz, smaller values of capacitors can be
used on the slider.
Table 8. Capacitor and Inductor Tuning and Placement for
LNA S22 Tuning
Figure 57. PCB Layout for LNA Evaluation Board (Note Slider on Bias Line
Rev. A | Page 18 of 24
06829-056
with Capacitor Placement for S22 Tuning Noted by Arrows)
Page 19
ADL5523
TUNING THE LNA INPUT FOR OPTIMAL GAIN
LNAs are generally tuned for either gain or noise optimization,
or some trade-off between the two. One figure of merit of an LNA
is how much trade-off must be made for one of these parameters to
optimize the other. With the ADL5523, an S11 of 6 dB to 8 dB
at the input to the matching network can still be achieved
typically when optimizing for noise.
For optimal gain matching, the goal is to use a matching network
that converts the input impedance of the LNA to the characteristic
impedance of the system, typically 50 Ω. Correct tuning for gain
matching results in a conjugate match. That is, the impedance of
the matching network at the LNA input, looking back toward
the generator, is always the complex conjugate of the LNA input
impedance when matched for gain.
Once S11*, the complex conjugate of S11, is known, a matching
circuit must be found that transforms the 50 Ω system impedance
into the conjugate S11 impedance. To do this, the designer starts at
the origin of the Smith Chart circle and finds components that
move the 50 Ω match to S11*.
The related impedances for gain matching are shown in Figure 58.
A Smith Chart representation of the conjugate match is shown
in Figure 59.
50Ω
MATCHING
NETWORK
50Ω
Figure 58. Matching LNA Input for Gain
S11
S11*
LNA
06829-057
TUNING THE LNA INPUT FOR OPTIMAL NOISE
FIGURE
The point in the Smith Chart at which matching for optimal
OPT
OPT
. This
OPT
is a
.
noise occurs is typically referred to as gamma optimal or Γ
Typically, it is significantly different from the gain matching
point; finding Γ
is not as obvious as the gain match. Γ
OPT
function of the semiconductor structure and characteristics of
the LNA. The fabrication facility that produces the LNA typically
has this information. Γ
can also be determined by doing
OPT
source pull testing in the lab.
Noise matching for the ADL5523 is actually very easy because
the area of the Smith Chart where the noise figure is optimal or
near optimal is not confined to a narrow area around Γ
is very advantageous because it means that component variations
play a smaller part in the board-to-board variation of noise figure.
The matching area for optimal noise for the ADL5523 is shown
in Figure 60. Note that textbooks usually define noise circles as
a conjugate match. However, for the purpose of this data sheet,
the circle is a direct match. To find the correct matching circuit,
the designer must start with the S11 of the LNA and select
components that move the S11 to within this circle.
An important aspect of the overall ADL5523 ease of tuning is
that as long as S22 is matched for a particular frequency, the
noise matching area remains very consistent in its placement for
that frequency. If S22 is matched, take the measured S11 and
move it into the red circle shown in Figure 60 for optimal noise
matching.
1
S11*
S11
Figure 59. Smith Chart Representation of Conjugate Match
06829-058
Rev. A | Page 19 of 24
0.5
0.2
0.2
0.2
0.5
Figure 60. Area of Optimal Noise Matching for ADL5523
0.515 10
1
5
10
10
5
06829-059
Page 20
ADL5523
S11 OF THE LNA WITH S22 MATCHED
To determine the correct matching circuit for optimal noise,
look at the results of S11 for the various frequencies at which
S22 was tuned earlier in the Tun i ng S 22 section. Once S11 is
determined for a particular frequency, find the matching
components that provided that match. Figure 62 and Figure 63
show S11 for the various frequencies. Again, these measurements
are all based on S22 being matched at that particular frequency.
Note that, for the examples shown in Figure 62 and Figure 63, S11
is either in the lower left quadrant of the Smith Chart or slightly
into the upper left. To move the impedance in the given noise
circle, a series L component at the LNA input is required. The L
values in the examples differ but a correct L value moves the match
along the constant R circle up into the upper left quadrant of the
Smith Chart.
A shunt capacitor can then be added to move the match along a
constant admittance line, down and to the right, directly into
the center of the noise circle given in Figure 60.
The solution for the structure of the match for the examples in
Figure 62 and Figure 63 is a series L to the input of the LNA
and a shunt capacitor at the generator end of this inductor. The
recommended components for matching at various frequencies
are shown in Ta bl e 7 .
An example of the effect of the series L, shunt C match, based
on the 800 MHz example, is given in Figure 61. This example
uses the output from the Agilent ADS Smith Chart tool.
Figure 62. S11 of ADL5523 with S22 Matched at 2 GHz