Output frequency range: 500 MHz to 1500 MHz
Modulation bandwidth: >500 MHz (3 dB)
1 dB output compression: 14.4 dBm @ 900 MHz
Noise floor: −158.6 dBm/Hz @ 915 MHz
Sideband suppression: −55 dBc @ 900 MHz
Carrier feedthrough: −50 dBm @ 900 MHz
Single supply: 4.75 V to 5.25 V
24-lead LFCSP
APPLICATIONS
Cellular communication systems at 900 MHz
CDMA2000/GSM
WiMAX/broadband wireless access systems
Cable communication equipment
Satellite modems
GENERAL DESCRIPTION
The ADL5371 is a member of the fixed-gain quadrature modulator
(F-MOD) family designed for use from 500 MHz to 1500 MHz.
Its excellent phase accuracy and amplitude balance enable high
performance intermediate frequency or direct radio frequency
modulation for communication systems.
The ADL5371 provides a >500 MHz, 3 dB baseband bandwidth,
making it ideally suited for use in broadband zero IF or low IFto-RF applications and in broadband digital predistortion
transmitters.
Quadrature Modulator
ADL5371
FUNCTIONAL BLOCK DIAGRAM
IBBP
IBBN
LOIP
LOIN
QBBN
QBBP
The ADL5371 accepts two differential baseband inputs and
a single-ended local oscillator (LO) and generates a singleended output.
The ADL5371 is fabricated using the Analog Devices, Inc.
advanced silicon-germanium bipolar process. It is available in a
24-lead, exposed-paddle, Pb-free, LFCSP. Performance is specified
over a −40°C to +85°C temperature range. A Pb-free evaluation
board is available.
QUADRATURE
PHASE
SPLITTER
Figure 1.
VOUT
06510-001
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
VS = 5 V; TA = 25°C; LO = 0 dBm1 single-ended; baseband I/Q amplitude = 1.4 V p-p differential sine waves in quadrature with a 500 mV
dc bias; baseband I/Q frequency (f
Table 1.
Parameter Conditions Min Typ Max Unit
ADL5371 Low frequency 500 MHz
High frequency 1500 MHz
Output Power, P
OUT
Output P1dB 14.4 dBm
Carrier Feedthrough −50 dBm
Sideband Suppression −55 dBc
Quadrature Error 0.1 Degrees
I/Q Amplitude Balance −0.03 dB
Second Harmonic P
Third Harmonic P
Output IP2 f1BB = 3.5 MHz, f2BB = 4.5 MHz, P
Output IP3 f1BB = 3.5 MHz, f2BB = 4.5 MHz, P
Noise Floor
GSM 6 MHz carrier offset, P
LO INPUTS
LO Drive Level
1
Input Return Loss See Figure 9 for the return loss vs. frequency plot −7 dB
I/Q Input Bias Level 500 mV
Input Bias Current Current sourcing from each baseband input with a bias of 500 mV dc
Input Offset Current 0.1 μA
Differential Input Impedance 2900 kΩ
Bandwidth (0.1 dB) 70 MHz
Bandwidth (1 dB) 350 MHz
POWER SUPPLIES Pin VPS1, Pin VPS2, Pin VPS3, Pin VPS4, and Pin VPS5
Voltage 4.75 5.25 V
Supply Current 175 200 mA
1
Higher LO drive reduces noise at a 6 MHz carrier offset in GSM applications.
2
See the V-to-I Converter section for architecture information.
) = 1 MHz, LO frequency = 900 MHz, unless otherwise noted.
BB
7.6 dBm
− (fLO + (2 × fBB)), P
OUT
− (fLO + (3 × fBB)), P
OUT
I/Q inputs = 0 V differential with a 500 mV common-mode bias,
= 6.2 dBm −56 dBc
OUT
= 6.2 dBm −50 dBc
OUT
= 1.6 dBm per tone 57 dBm
OUT
= 1.6 dBm per tone 27 dBm
OUT
−158.6 dBm/Hz
20 MHz carrier offset
= 5 dBm, PLO = 6 dBm, LO = 940 MHz −158.5 dBc/Hz
OUT
Characterization performed at typical level −6 0 +6 dBm
2
45 μA
Rev. 0 | Page 3 of 20
Page 4
ADL5371
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter Rating
Supply Voltage VPOS 5.5 V
IBBP, IBBN, QBBP, QBBN 0 V to 2 V
LOIP and LOIN 13 dBm
Internal Power Dissipation 1188 mW
θJA (Exposed Paddle Soldered Down) 54°C/W
Maximum Junction Temperature 152°C
Operating Temperature Range −40°C to +85°C
Storage Temperature Range −65°C to +150°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
ESD CAUTION
Rev. 0 | Page 4 of 20
Page 5
ADL5371
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
QBBP
COM4
QBBN
COM4
IBBN
IBBP
2422232120
19
COM1
COM1
VPS1
VPS1
VPS1
VPS1
1
2
3
4
5
6
F-MOD
TOP VIEW
(Not to Scale)
798
101112
LOIP
LOIN
COM2
COM2
COM3
VPS5
18
VPS4
17
VPS3
16
VPS2
15
VPS2
14
VOUT
13
COM3
06510-002
Figure 2. Pin Configuration
Table 3. Pin Function Descriptions
Pin No. Mnemonic Description
1, 2 COM1 Input Common Pins. Connect to ground plane via a low impedance path.
7, 10 COM2 Input Common Pins. Connect to ground plane via a low impedance path.
11, 12 COM3 Input Common Pins. Connect to ground plane via a low impedance path.
21, 22 COM4 Input Common Pins. Connect to ground plane via a low impedance path.
3 to 6 VPS1
Positive Supply Voltage Pins. All pins should be connected to the same supply (V
adequate external bypassing, connect 0.1 μF capacitors between each pin and ground.
Adjacent power supply pins of the same name can share one capacitor (see Figure 23).
14, 15 VPS2
Positive Supply Voltage Pins. All pins should be connected to the same supply (V
adequate external bypassing, connect 0.1 μF capacitors between each pin and ground.
Adjacent power supply pins of the same name can share one capacitor (see Figure 23).
16 to 18 VPS3 to VPS5
Positive Supply Voltage Pins. All pins should be connected to the same supply (V
adequate external bypassing, connect 0.1 μF capacitors between each pin and ground.
Adjacent power supply pins of the same name can share one capacitor (see Figure 23).
8, 9 LOIP, LOIN
50 Ω Single-Ended Local Oscillator Input. Internally dc-biased. Pins must be ac-coupled.
AC-couple LOIN to ground and drive LO through LOIP.
13 VOUT
Device Output. Single-ended RF output. Pin should be ac-coupled to the load. The output is
ground referenced.
19, 20, 23, 24
IBBP, IBBN,
QBBN, QBBP
Differential In-Phase and Quadrature Baseband Inputs. These high impedance inputs must be
dc-biased to 500 mV dc and must be driven from a low impedance source. Nominal characterized
ac signal swing is 700 mV p-p on each pin. This results in a differential drive of 1.4 V p-p with a
500 mV dc bias. These inputs are not self-biased and must be externally biased.
Exposed Paddle Connect to ground plane via a low impedance path.
). To ensure
S
). To ensure
S
). To ensure
S
Rev. 0 | Page 5 of 20
Page 6
ADL5371
TYPICAL PERFORMANCE CHARACTERISTICS
VS = 5 V; TA = 25°C; LO = 0 dBm single-ended; baseband I/Q amplitude = 1.4 V p-p differential sine waves in quadrature with a 500 mV
dc bias; baseband I/Q frequency (f
10
9
8
7
6
5
4
3
SSB OUTPUT P OWER (dBm)
2
1
0
10
9
8
7
6
5
4
3
SSB OUTPUT POWER (dBm)
2
1
0
TA = –40°C
500 600 700 800 900 1000 1100 1200 1300 1400 1500
LO FREQUENCY (MHz)
Figure 3. Single Sideband (SSB) Output Power (P
LO Frequency (f
VS = 5.0V
VS = 4.75V
500 600 700 800 900 1000 1100 1200 1300 1400 1500
LO FREQUENCY (MHz)
Figure 4. Single Sideband (SSB) Output Power (P
LO Frequency (f
5
) = 1 MHz, unless otherwise noted.
BB
TA = +85°C
TA = +25°C
) vs.
) and Temperature
LO
VS = 5.25V
) and Supply
LO
OUT
OUT
) vs.
16
15
TA = –40°C
14
13
12
11
10
9
8
1dB OUTPUT COMPRESSI ON (dBm)
7
6
500 600 700 800 900 1000 1100 1200 1300 1400 1500
6510-003
Figure 6. SSB Output 1 dB Compression Point (OP1dB) vs. f
Figure 7. SSB Output 1 dB Compression Point (OP1dB) vs. f
120
TA = +85°C
LO FREQ UENCY (MHz)
VS = 5.0V
VS = 5.25V
LO FREQ UENCY (MHz)
90
TA = +25°C
VS = 4.75V
and Temperature
LO
and Supply
LO
60
06510-006
06510-007
0
OUTPUT PO WER VARIANCE (d B)
–5
1101001000
BASEBAND FREQUENCY (M Hz)
Figure 5. I/Q Input Bandwidth Normalized to
Gain @ 1 MHz (f
= 900 MHz)
LO
06510-005
Rev. 0 | Page 6 of 20
150
210
S11 OF LOIP
S22 OF OUTPUT
240
500MHz
1500MHz
1500MHz
500MHz
270
Figure 8. Smith Chart of LOIP S11 and VOUT S22
from 500 MHz to 1500 MHz)
(f
LO
300
30
330
0180
06510-008
Page 7
ADL5371
–
0
–5
–10
–15
RETURN LOSS (dB)
–20
–25
500 600 700 800 900 1000 1100 1200 1300 1400 1500
LO FREQUENCY (MHz)
Figure 9. Return Loss (S11) of LOIP
6510-009
0
–10
–20
TA = +85°C
–30
–40
–50
–60
–70
SIDEBAND SUPPRESSION (dBc)
–80
–90
500 600 700 800 900 1000 1100 1200 1300 1400 1500
TA = +25°C
TA = –40°C
LO FREQ UENCY (MHz)
Figure 12. Sideband Suppression vs.
and Temperature (Multiple Devices Shown)
f
LO
06510-012
0
–10
–20
CARRIER FEEDTHRO UGH (dBm)
–30
–40
–50
–60
–70
–80
–90
TA = +25°C
500 600 700 800 900 1000 1100 1200 1300 1400 1500
LO FREQ UENCY (MHz)
TA = –40°C
TA = +85°C
Figure 10. Carrier Feedthrough vs.
and Temperature (Multiple Devices Shown)
f
LO
0
–10
–20
–30
TA = +85°C
–40
–50
–60
–70
CARRIER FEEDTHROUG H (dBm)
–80
–90
500 600 700 800 900 1000 1100 1200 1300 1400 1500
TA = +25°C
LO FREQ UENCY (MHz)
TA = –40°C
0
–10
–20
–30
TA = +85°C
–40
–50
–60
–70
SIDEBAND SUPPRESSION (dBc)
–80
–90
06510-010
TA = +25°C
500 600 700 800 900 1000 1100 1200 1300 1400 1500
LO FREQUENCY (MHz)
Figure 13. Sideband Suppression vs. f
TA = –40°C
and Temperature After
LO
06510-013
Nulling at 25°C (Mu ltiple Devic es Show n)
20
–30
–40
–50
–60
SIDEBAND SUPPRESSION
–70
DISTORTION, CARRIE R FEEDTHROUG H,
SECOND-ORDER DI STORTI ON, THI RD-ORDER
–80
6510-011
CARRIER
FEEDTHROUG H (dBm)
THIRD-ORDER ( dBc)
0.20.61.01.41.82.22.63.03.4
SSB OUTPUT P OWER (d Bm)
SIDEBAND SUPPRESSION (dBc)
SECOND-ORDER (dBc)
BASEBAND INPUT VO LTAGE ( V p-p)
15
10
5
0
–5
–10
–15
SSB OUTPUT PO WER (dBm)
06510-014
Figure 11. Carrier Feedthrough vs. f
Nulling at 25°C (Multiple Devices Shown)
and Temperature After
LO
Figure 14. Second- and Third-Order Distortion, Carrier Feedthrough,
Sideband Suppression, and SSB P
vs. Baseband Differential Input Level
OUT
= 900 MHz)
(f
LO
Rev. 0 | Page 7 of 20
Page 8
ADL5371
–
–
–
20
–30
–40
–50
THIRD-ORDER
T
= +85°C
A
THIRD-ORDER
= +25°C
T
A
THIRD- ORDER
= –40°C
T
A
80
70
60
50
40
TA = –40°C
TA = +85°C
TA = +25°C
–60
SECOND-ORDER
= +25°C
T
THIRD-ORDER DI STORTION (dBc)
–70
SECOND-ORDER DISTORTI ON AND
SECOND-ORDER
= +85°C
T
A
–80
500 600 700 800 900 1000 1100 1200 1300 1400 1500
A
LO FREQUENCY (MHz)
Figure 15. Second- and Third-Order Distortion vs. f
SECOND-ORDER
= –40°C
T
A
and Temperature
LO
(Baseband I/Q Amplitude = 1.4 V p-p Differential)
20
–25
–30
–35
–40
–45
SUPPRESSION
–50
–55
SECOND-ORDER DIST ORTIO N, THIRD-ORDER
–60
DISTORTION, CARRIER F EEDTHROUGH, SIDEBAND
CARRIER
FEEDTHROUG H (dBm)
1M10M100M
BASEBAND FREQUENCY ( Hz)
SIDEBAND SUPPRESSION (dBc)
THIRD-ORDER ( dBc)
SECOND-ORDER (d Bc)
Figure 16. Second- and Third-Order Distortion, Carrier Feedthrough,
Sideband Suppression, and SSB P
30
TA = –40°C
25
20
15
10
5
OUTPUT THIRD ORDER INTE RCEPT (dBm)
0
500 600 700 800 900 1000 1100 1200 1300 1400 1500
LO FREQUE NCY (MHz)
vs. fBB (fLO = 900 MHz)
OUT
TA = +85°C
TA = +25°C
Figure 17. OIP3 vs. Frequency and Temperature
30
20
10
OUTPUT SECO ND ORDER INTE RCEPT (dBm)
0
500 600 700 800 900 1000 1100 1200 1300 1400 1500
06510-015
LO FREQUENCY (MHz)
06510-019
Figure 18. OIP2 vs. Frequency and Temperature
20
SSB OUTPUT POWER (dBm)
–30
–40
–50
SIDEBAND SUPPRESSI ON
–60
DISTORTION, CARRIER F EEDTHROUGH,
SECOND-ORDER DIST ORTIO N, THIRD-ORDER
06510-016
SIDEBAND SUPP RESSION (dBc)
–70
–6–4–20246–5–3–1135
CARRIER
FEEDTHROUGH (dBm)
LO AMPL ITUDE ( dBm)
THIRD-ORDER (dBc)
SECOND-ORDER (dBc)
8
7
6
5
4
SSB OUTPUT POWER (dBm)
3
06510-020
Figure 19. Second- and Third-Order Distortion, Carrier Feedthrough,
Sideband Suppression, and SSB P
0.20
0.19
0.18
0.17
0.16
0.15
0.14
0.13
SUPPLY CURRENT (A)
0.12
0.11
0.10
06510-018
VS = 5.25V
VS = 5.0V
VS = 4.75V
–403560–151085
vs. LO Amplitude (fLO = 900 MHz)
OUT
TEMPERATURE (° C)
06510-022
Figure 20. Power Supply Current vs. Temperature
Rev. 0 | Page 8 of 20
Page 9
ADL5371
25
20
15
QUANTITY
10
5
0
–159.6
–159.4
–159.2
–159.0
–158.8
NOISE AT 20MHz OFFSET (dBm/Hz)
–158.6
f
= 915MHz
LO
–158.4
–158.2
–158.0
–157.8
–157.6
06510-021
Figure 21. 20 MHz Offset Noise Floor Distribution at f
(I/Q Amplitude = 0 mV p-p with 500 mV dc Bias)
= 915 MHz
LO
Rev. 0 | Page 9 of 20
Page 10
ADL5371
THEORY OF OPERATION
CIRCUIT DESCRIPTION
Overview
The ADL5371 can be divided into five circuit blocks: the LO
interface, the baseband voltage-to-current (V-to-I) converter,
the mixers, the differential-to-single-ended (D-to-S) converter,
and the bias circuit. A detailed block diagram of the device is
shown in
The LO interface generates two LO signals in quadrature. These
signals are used to drive the mixers. The I/Q baseband input
signals are converted to currents by the V-to-I stages, which
then drive the two mixers. The outputs of these mixers combine
to feed the output balun, which provides a single-ended output
interface. The bias cell generates a reference current for the
V-to-I stage .
LO Interface
The LO interface consists of a polyphase quadrature splitter
followed by a limiting amplifier. The LO input impedance is set
by the polyphase. The LO can be driven either single-ended or
differentially. When driven single-ended, the LOIN pin should
be ac-grounded via a capacitor. Each quadrature LO signal then
passes through a limiting amplifier that provides the mixer with
a limited drive signal.
Figure 22.
LOIP
LOIN
IBBP
IBBN
QBBP
QBBN
PHASE
SPLITTER
Σ
Figure 22. Block Diagram
OUT
6510-023
V-to-I Converter
The differential baseband inputs (QBBP, QBBN, IBBN, and
IBBP) consist of the bases of PNP transistors, which present a
high impedance. The voltages applied to these pins drive the
V-to-I stage that converts baseband voltages into currents. The
differential output currents of the V-to-I stages feed each of
their respective Gilbert-cell mixers. The dc common-mode
voltage at the baseband inputs sets the currents in the two mixer
cores. Varying the baseband common-mode voltage varies the
current in the mixer and affects overall modulator performance.
The recommended dc voltage for the baseband common-mode
voltage is 500 mV dc.
Mixers
The ADL5371 has two double-balanced mixers: one for the
in-phase channel (I channel) and one for the quadrature
channel (Q channel). Both mixers are based on the Gilbert-cell
design of four cross-connected transistors. The output currents
from the two mixers sum together into an on-chip balun, which
converts the differential signal to single-ended.
D-to-S Stage
The output D-to-S stage consists of an on-chip balun that
converts the differential signal to a single-ended signal. The
balun presents high impedance to the output (VOUT).
Therefore, a matching network may be needed at the output for
optimal power transfer.
Bias Circuit
An on-chip band gap reference circuit is used to generate a
proportional-to-absolute temperature (PTAT) reference current
for the V-to-I stage.
Rev. 0 | Page 10 of 20
Page 11
ADL5371
BASIC CONNECTIONS
Figure 23 shows the basic connections for the ADL5371.
QBBPQ BBNIBBNIBBP
C16
VPOS
COM1
COM1
VPS1
VPS1
VPS1
VPS1
C12
0.1µF
1
2
3
4
5
6
GND
CLOP
100pF
QBBP
COM4
QBBN
COM4
2423222120
Z1
F-MOD
EXPOSED PADDLE
789
COM2
LO
LOIP
LOIN
101112
COM2
CLON
100pF
IBBN
COM3
IBBP
19
COM3
18
17
16
15
14
13
VPS5
VPS4
VPS3
VPS2
VPS2
VOUT
COUT
100pF
C13
0.1µF
0.1µF
C15
0.1µF
C14
0.1µF
C11
OPEN
VPOS
VOUT
Figure 23. Basic Connections for the ADL5371
POWER SUPPLY AND GROUNDING
All the VPS pins must be connected to the same 5 V source.
Adjacent pins of the same name can be tied together and decoupled
with a 0.1 µF capacitor. These capacitors should be located as
close as possible to the device. The power supply can range
between 4.75 V and 5.25 V.
The COM1 pin, COM2 pin, COM3 pin, and COM4 pin should
be tied to the same ground plane through low impedance paths.
The exposed paddle on the underside of the package should also
be soldered to a low thermal and electrical impedance ground
plane. If the ground plane spans multiple layers on the circuit
board, they should be stitched together with nine vias under the
exposed paddle. The Application Note
thermal and electrical grounding of the LFCSP in detail.
AN-772 discusses the
06510-024
BASEBAND INPUTS
The baseband inputs QBBP, QBBN, IBBP, and IBBN must be
driven from a differential source. The nominal drive level of
1.4 V p-p differential (700 mV p-p on each pin) should be
biased to a common-mode level of 500 mV dc.
The dc common-mode bias level for the baseband inputs range
from 400 mV to 600 mV. This results in a reduction in the
usable input ac swing range. The nominal dc bias of 500 mV
allows for the largest ac swing, limited on the bottom end by the
ADL5371 input range and on the top end by the output compliance
range on most DACs from Analog Devices.
LO INPUT
A single-ended LO signal should be applied to the LOIP pin
through an ac coupling capacitor. The recommended LO drive
power is 0 dBm. The LO return pin, LOIN, should be ac-coupled
to ground through a low impedance path.
The nominal LO drive of 0 dBm can be increased to up to 7 dBm
to realize an improvement in the noise performance of the
modulator (see
Figure 33). This improvement is tempered by
degradation in the sideband suppression performance (see
Figure 19) and, therefore, should be used judiciously. If the LO
source cannot provide the 0 dBm level, operation at a reduced
power below 0 dBm is acceptable. Reduced LO drive results in
slightly increased modulator noise. The effect of LO power on
sideband suppression and carrier feedthrough is shown in
Figure 19. The effect of LO power on GSM noise is shown in
Figure 33.
RF OUTPUT
The RF output is available at the VOUT pin (Pin 13). The
VOUT pin connects to an internal balun, which is capable of
driving a 50 load. For applications requiring 50 output
impedance, external matching is needed (see
performance). The internal balun provides a low dc path to
ground. In most situations, the VOUT pin should be ac-coupled
to the load.
Figure 8 for S22
Rev. 0 | Page 11 of 20
Page 12
ADL5371
–
–
OPTIMIZATION
The carrier feedthrough and sideband suppression performance
of the ADL5371 can be improved by using optimization
techniques.
Carrier Feedthrough Nulling
Carrier feedthrough results from minute dc offsets that occur
between each of the differential baseband inputs. In an ideal
modulator, the quantities (V
are equal to zero, which results in no carrier feedthrough. In a real
modulator, those two quantities are nonzero, and, when mixed
with the LO, they result in a finite amount of carrier feedthrough.
The ADL5371 is designed to provide a minimal amount of carrier
feedthrough. Should even lower carrier feedthrough levels be
required, minor adjustments can be made to the (V
and (V
QOPP
− V
) offsets. The I-channel offset is held constant
QOPN
while the Q-channel offset is varied until a minimum carrier
feedthrough level is obtained. The Q-channel offset required to
achieve this minimum is held constant, while the offset on the Ichannel is adjusted until a new minimum is reached. Through
two iterations of this process, the carrier feedthrough can be
reduced to as low as the output noise. The ability to null is
sometimes limited by the resolution of the offset adjustment.
Figure 24 shows the relationship of carrier feedthrough vs. dc
offset as null.
60
–64
–68
–72
–76
–80
CARRIER FEEDTHRO UGH (dBm)
–84
–88
–300 –240 –180 –120 –60060120 180 240 300
Figure 24. Typical Carrier Feedthrough vs. DC Offset Voltage
Note that throughout the nulling process, the dc bias for the
baseband inputs remains at 500 mV. When no offset is applied,
= V
V
IOPP
V
IOPP
When an offset of +V
V
IOPP
V
IOPN
V
IOPP
= 500 mV, or
IOPN
− V
= V
IOPN
IOS
IOS
= 500 mV + V
= 500 mV − V
− V
= V
IOPN
IOS
= 0 V
The same applies to the Q channel inputs.
− V
IOPN
) and (V
IOPP
VP – VN OFFSET (µV)
QOPP
IOPP
− V
− V
QOPN
is applied to the I-channel inputs,
/2, and
IOS
/2, such that
IOS
IOPN
)
)
06510-025
It is often desirable to perform a one-time carrier null calibration. This is usually performed at a single frequency.
Figure 25
shows how carrier feedthrough varies with LO frequency over a
range of ±50 MHz on either side of a null at 940 MHz.
40
–45
–50
–55
–60
–65
–70
–75
–80
CARRIER FEEDTHRO UGH (dBm)
–85
–90
890 900 910 920 930 940 950 960 97 0 980 990
LO FREQUENCY (MHz)
06510-026
Figure 25. Carrier Feedthrough vs. Frequency After Nulling at 940 MHz
Sideband Suppression Optimization
Sideband suppression results from relative gain and relative
phase offsets between the I/Q channels and can be suppressed
through adjustments to those two parameters.
Figure 26
illustrates how sideband suppression is affected by the gain and
phase imbalances.
0
–10
2.5dB
–20
1.25dB
0.5dB
–30
0.25dB
–40
0.125dB
0.05dB
–50
0.025dB
–60
0.0125dB
–70
SIDEBAND SUPPRESSI ON (dBc)
0dB
–80
–90
0.010.1110100
PHASE ERROR (Deg rees)
06510-027
Figure 26. Sideband Suppression vs. Quadrature Phase Error for Various
Quadrature Amplitude Offsets
Figure 26 underlines the fact that adjusting only one parameter
improves the sideband suppression only to a point, unless the
other parameter is also adjusted. For example, if the amplitude
offset is 0.25 dB, improving the phase imbalance more than 1°
does not yield any improvement in the sideband suppression. For
optimum sideband suppression, an iterative adjustment
between phase and amplitude is required.
The sideband suppression nulling can be performed either through
adjusting the gain for each channel or through the modification
of the phase and gain of the digital data coming from the digital
signal processor.
Rev. 0 | Page 12 of 20
Page 13
ADL5371
APPLICATIONS INFORMATION
DAC MODULATOR INTERFACING
The ADL5371 is designed to interface with minimal components
to members of the Analog Devices family of DACs. These DACs
feature an output current swing from 0 to 20 mA, and the
interface described in this section can be used with any DAC
that has a similar output.
Driving the ADL5371 with a TxDAC®
An example of the interface using the AD9779 TxDAC is shown
Figure 27. The baseband inputs of the ADL5371 require a dc
in
bias of 500 mV. The average output current on each
AD9779
output is 10 mA. Therefore, a single 50 Ω resistor to ground
from each DAC output results in an average current of 10 mA
flowing through each resistor, thus producing the desired
500 mV dc bias for the inputs to the ADL5371.
AD9779F-MOD
OUT1_P
OUT1_N
OUT2_N
OUT2_P
Figure 27. Interface Between the
Ground to Establish the 500 mV dc Bias for the ADL5371 Baseband Inputs
93
RBIP
50Ω
RBIN
50Ω
92
84
RBQN
50Ω
RBQP
50Ω
83
19
IBBP
20
IBBN
23
QBBN
24
QBBP
06510-028
AD9779 and ADL5371 with 50 Ω Resistors to
The AD9779 output currents have a swing that ranges from 0 to
20 mA. With the 50 Ω resistors in place, the ac voltage swing
going into the ADL5371 baseband inputs ranges from 0 V to 1 V.
A full-scale sine wave out of the
AD9779 can be described as a
1 V p-p single-ended (or 2 V p-p differential) sine wave with a
500 mV dc bias.
LIMITING THE AC SWING
There are situations when it is desirable to reduce the ac voltage
swing for a given DAC output current. This can be achieved
through the addition of another resistor to the interface. This
resistor is placed in shunt between each side of the differential
pair, as shown in
swing without changing the dc bias already established by the
50 Ω resistors.
Figure 28. It has the effect of reducing the ac
AD9779F-MOD
OUT1_P
OUT1_N
OUT2_N
OUT2_P
93
RBIP
50Ω
RBIN
50Ω
92
84
RBQN
50Ω
RBQP
50Ω
83
RSLI
100Ω
RSLQ
100Ω
19
IBBP
20
IBBN
23
QBBN
24
QBBP
Figure 28. AC Voltage Swing Reduction Through the Introduction
of a Shunt Resistor Between the Differential Pair
The value of this ac voltage swing-limiting resistor is chosen
based on the desired ac voltage swing.
Figure 29 shows the
relationship between the swing-limiting resistor and the peakto-peak ac swing that it produces when 50 Ω bias-setting
resistors are used.
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
DIFFERENTIAL SWING (V p-p)
0.4
0.2
0
10100100010000
RL (Ω)
06510-030
Figure 29. Relationship Between the AC Swing-Limiting Resistor and the
Peak-to-Peak Voltage Swing with 50 Ω Bias-Setting Resistors
FILTERING
It is necessary to low-pass filter the DAC outputs to remove
images when driving a modulator. The interface for setting up
the biasing and ac swing discussed in the
Swing
section lends itself well to the introduction of such a
filter. The filter can be inserted between the dc bias-setting
resistors and the ac swing-limiting resistor. Doing so establishes
the input and output impedances for the filter.
Limiting the AC
06510-029
Rev. 0 | Page 13 of 20
Page 14
ADL5371
–
–
Figure 30 shows an example of a third-order elliptical filter
with a 3 dB frequency of 3 MHz. Matching input and output
impedances makes the filter design easier, so the shunt resistor
chosen is 100 Ω, producing an ac swing of 1 V p-p differential.
USING THE AD9779 AUXILIARY DAC FOR CARRIER
FEEDTHROUGH NULLING
The AD9779 features an auxiliary DAC that can be used to
inject small currents into the differential outputs for each main
DAC channel. This feature can be used to produce the small
offset voltages necessary to null out the carrier feedthrough
from the modulator.
to use the auxiliary DACs. This adds four resistors to the
interface.
AUX1_P
AD9779F-MOD
OUT1_P
OUT1_N
AUX1_N
AUX2_N
OUT2_N
OUT2_P
AUX2_P
90
500Ω
93
92
89
500Ω
87
500Ω
84
83
86
500Ω
Figure 31. DAC Modulator Interface with Auxiliary DAC Resistors
Figure 31 shows the interface required
RBIP
50Ω
RBIN
50Ω
RBQN
50Ω
RBQP
50Ω
250Ω
1.1nF
250Ω
250Ω
1.1nF
250Ω
C1I
C1Q
LPI
2.7nH
1.1nF
LNI
2.7nH
LNQ
2.7nH
1.1nF
LPQ
2.7nH
C2I
C2Q
RSLI
100Ω
RSLQ
100Ω
19
IBBP
20
IBBN
23
QBBN
24
QBBP
06510-031
06510-032
GSM OPERATION
Figure 32 shows the GSM/EDGE EVM and spectral mask
performance vs. output power for the ADL5371 at 940 MHz.
For a given LO amplitude, the performance is independent of
output power.
30
–40
–50
–60
–70
–80
–90
SPECTRAL MASK (dB c/30kHz)
–100
250kHz, 400kHz, 600kHz, AND 1200kHz
6MHz OFF SET NO ISE FL OOR (d Bc/100kHz)
–110
–66
250kHz
400kHz
6MHz NOIS E FLO OR
EVM RMS (%)
OUTPUT POWE R (dBm)
1200kHz
600kHz
EVM PEAK (%)
420–2–4
Figure 32. GSM/EDGE (8 PSK) EVM and Spectral Performance vs. Channel
Power at 940 MHz vs. Output Power; LO Power = 0 dBm
Figure 33 shows the GSM/EDGE EVM and 6 MHz offset noise
vs. LO amplitude at 940 MHz with an output power of 5 dBm.
Increasing the LO drive level improves the noise performance
with minimal degradation in EVM performance.
The ADF4360 comes as a family of chips, with nine operating
frequency ranges. One is chosen, depending on the local
oscillator frequency required. While the use of the integrated
synthesizer may come at the expense of slightly degraded noise
performance from the ADL5371, it can be a cheaper alternative
to a separate PLL and VCO solution.
available.
Table 5.
Part Output Frequency Range (MHz)
ADF4360-0 2400 to 2725
ADF4360-1 2050 to 2450
ADF4360-2 1850 to 2150
ADF4360-3 1600 to 1950
ADF4360-4 1450 to 1750
ADF4360-5 1200 to 1400
ADF4360-6 1050 to 1250
ADF4360-7 350 to 1800
ADF4360-8 65 to 400
The AD9779 recommended in the previous sections of this data
sheet is by no means the only DAC that can be used to drive the
ADL5371. There are other appropriate DACs, depending on the
level of performance required.
All DACs listed have nominal bias levels of 0.5 V and use the same
simple DAC-modulator interface that is shown in
Figure 29.
MODULATOR/DEMODULATOR OPTIONS
Tabl e 7 lists other Analog Devices modulators and demodulators.
Table 7. Modulator/Demodulator Options
Modulator/
Part
AD8345 Modulator 140 to 1000
AD8346 Modulator 800 to 2500
AD8349 Modulator 700 to 2700
ADL5390 Modulator 20 to 2400
ADL5385 Modulator 50 to 2200
ADL5370 Modulator 300 to 1000
ADL5372 Modulator 1500 to 2500
ADL5373 Modulator 2300 to 3000
ADL5374 Modulator 3000 to 4000
AD8347 Demodulator 800 to 2700
AD8348 Demodulator 50 to 1000
AD8340
AD8341
Demodulator
Vector
modulator
Vector
modulator
Frequency
Range (MHz)
700 to 1000
1500 to 2400
Comments
External
quadrature
Rev. 0 | Page 15 of 20
Page 16
ADL5371
EVALUATION BOARD
Populated RoHS-compliant evaluation boards are available for
evaluation of the ADL5371. The ADL5371 package has an
exposed paddle on the underside. This exposed paddle must
be soldered to the board (see the
section). The evaluation board is designed without any
components on the underside so heat can be applied to the
underside for easy removal and replacement of the ADL5371.
QBBPQ BBNIBBNIBBP
RFNQ
VPOS
COM1
COM1
VPS1
VPS1
VPS1
VPS1
C12
0.1µF
RFPQ
0Ω
CFPQ
OPEN
1
2
3
4
5
6
CFNQ
0Ω
OPEN
RTQ
OPEN
QBBP
QBBN
2423222120
F-MOD
EXPOSED PADDLE
789
OPEN
COM4
Z1
Power Supply and Grounding
RFNI0ΩRFPI
CFNI
COM4
IBBN
101112
RTI
OPEN
IBBP
19
0Ω
CFPI
OPEN
18
17
16
15
14
13
VPS5
VPS4
VPS3
VPS2
VPS2
VOUT
COUT
100pF
C13
0.1µF
C16
0.1µF
C15
0.1µF
C14
0.1µF
L12
0Ω
L11
0Ω
C11
OPEN
VOUT
06510-037
Figure 35. Evaluation Board Layout, Top Layer
VPOS
LOIP
LOIN
COM2
COM3
CLON
100pF
COM3
06510-036
GND
CLOP
100pF
COM2
LO
Figure 34. ADL5371 Evaluation Board Schematic
Table 8. Evaluation Board Configuration Options
Component Description Default Condition
VPOS, GND Power Supply and Ground Clip Leads. Not applicable
RFPI, RFNI, RFPQ, RFNQ, CFPI,
CFNI, CFPQ, CFNQ, RTQ, RTI
Baseband Input Filters. These components can be used
to implement a low-pass filter for the baseband signals.
See the
Filtering section.
RFNQ, RFPQ, RFNI, RFPI = 0 Ω (0402)
CFNQ, CFPQ, CFNI, CFPI = Open (0402)
RTQ, RTI = Open (0402)
Rev. 0 | Page 16 of 20
Page 17
ADL5371
CHARACTERIZATION SETUP
AEROFLEX IFR 3416
250kHz TO 6GHz SIGNAL G ENERATOR
RF
OUT
R AND S SPECTRUM ANALYZER
FSU 20Hz TO 8GHz
LO
CONNECT TO BACK OF UNIT
I OUTQ OUT
I/AMQ/FM
VPOS +5V
AGILENT 34401A
MULTIMETER
AGILENT E3631A
POWER SUPPLY
6V
+
±25V
–
+
COM
90°
–
IQ
Figure 36. Characterization Bench Setup
The primary setup used to characterize the ADL5371 is shown
in
Figure 36. This setup was used to evaluate the product as a
single-sideband modulator. The Aeroflex signal generator supplied
the LO and differential I/Q baseband signals to the device
under test, DUT. The typical LO drive was 0 dBm. The I channel
is driven by a sine wave, and the Q channel is driven by a cosine
wave. The lower sideband is the single sideband (SSB) output.
RF
IN
06510-038
IP
IN
QP
QN
0°
FMOD
OUT
GNDVPOS
+6dBm
FMOD TEST SETUP
LO
OUTPUT
The majority of characterization for the ADL5371 was performed
using a 1 MHz sine wave signal with a 500 mV common-mode
voltage applied to the baseband signals of the DUT. The baseband
signal path was calibrated to ensure that the V
IOS
and V
offsets on the baseband inputs were minimized, as close as
possible, to 0 V before connecting to the DUT. See the
Carrier Feedthrough Nulling section for the definitions of
V
and V
IOS
QOS
.
QOS
Rev. 0 | Page 17 of 20
Page 18
ADL5371
TEKTRONI X AFG3252
DUAL FUNCTIO N
ARBITRARY FUNCTI ON GENERATOR
R AND S SMT 06
SIGNAL GE NERATOR
RF
OUT
CH1 OUTP UT
CH2 OUTP UT
LO
OUTPUT
AGILENT E3631A
POWER SUPPLY
6V
–
VPOS +5V
+
VPOS +5V
AGILENT E3631A
POWER SUPPLY
0°
±25V
–
+
COM
–5V
+5V
90°
IQ
SINGLE TO DIFFERENTIAL
CIRCUIT BOARD
FMOD TEST RACK
Q IN AC
Q IN DCCM
TSEN GND
VPOSB VPOSA
IN1
AGND
VN1VP1
I IN DCCM
I IN AC
IN1
QP
QN
FMOD
CHAR BD
IP
IN
IP
LO
IN
QP
OUT
QN
GND
VPOS
R AND S FSEA 30
SPECTRUM ANALYZER
6V±25V
–
+
VCM = 0.5V
AGILENT 34401A
MULTIMETER
–
+
COM
Figure 37. Setup for Baseband Frequency Sweep and Undesired Sideband Nulling
The setup used to evaluate baseband frequency sweep and
undesired sideband nulling of the ADL5371 is shown in
Figure 37.
The interface board has circuitry that converts the single-ended
I/Q inputs from the arbitrary function generator to differential
I/Q baseband signals with a dc bias of 500 mV. Undesired
RF
IN
100MHz TO 4GHz
+6dBm
06510-039
sideband nulling was achieved through an iterative process of
adjusting amplitude and phase on the Q channel. See the
Sideband Suppression Optimization section for a detailed
discussion on sideband nulling.
Rev. 0 | Page 18 of 20
Page 19
ADL5371
OUTLINE DIMENSIONS
4.00
PIN 1
INDICATOR
1.00
0.85
0.80
SEATING
PLANE
12° MAX
BSC SQ
TOP
VIEW
0.80 MAX
0.65 TYP
*
COMPLIANT TO JEDEC STANDARDS MO-220-VGGD-2
EXCEPT FOR EXPOSED PAD DIMENSION
0.30
0.23
0.18
3.75
BSC SQ
0.20 REF
0.05 MAX
0.02 NOM
COPLANARITY
0.60 MAX
0.50
BSC
0.50
0.40
0.30
0.08
Figure 38. 24-Lead Lead Frame Chip Scale Package [LFCSP_VQ]
4 mm × 4 mm Body, Very Thin Quad
(CP-24-2)
Dimensions shown in millimeters
0.60 MAX
19
18
EXPOSED
(BOTTOMVIEW)
13
12
PA D
24
6
7
1
2.50 REF
PIN 1
INDICATOR
*
2.45
2.30 SQ
2.15
0.23 MIN
ORDERING GUIDE
Model Temperature Range Package Description Package Option Ordering Quantity