Datasheet ADL5350 Datasheet (ANALOG DEVICES)

LF to 4 GHz

FEATURES

Broadband radio frequency (RF), intermediate frequency (IF),

and local oscillator (LO) ports Conversion loss: 6.8 dB Noise figure: 6.5 dB High input IP3: 25 dBm High input P1dB: 19 dBm Low LO drive level Single-ended design: no need for baluns Single-supply operation: 3 V @ 19 mA Miniature, 2 mm × 3 mm, 8-lead LFCSP RoHS compliant

APPLICATIONS

Cellular base stations Point-to-point radio links RF instrumentation

High Linearity Y-Mixer

ADL5350

FUNCTIONAL BLOCK DIAGRAM

GND

ADL5350

RF IF

INPUT

Figure 1.

INPUT OR

OUTPUT

VPOS

OUTPUT O

INPUT

GND

05615-001

GENERAL DESCRIPTION

The ADL5350 is a high linearity, up-and-down converting mixer capable of operating over a broad input frequency range. It is well suited for demanding cellular base station mixer designs that require high sensitivity and effective blocker immunity. Based on a GaAs pHEMT, single-ended mixer architecture, the ADL5350 provides excellent input linearity and low noise figure without the need for a high power level LO drive.

In 850 MHz/900 MHz receive applications, the ADL5350 provides a typical conversion loss of only 6.7 dB. The input IP3 is typically greater than 25 dBm, with an input compression point of 19 dBm. The integrated LO amplifier allows a low LO drive level, typically only 4 dBm for most applications.

The high input linearity of the ADL5350 makes the device an excellent mixer for communications systems that require high blocker immunity, such as GSM 850 MHz/900 MHz and 800 MHz CDMA2000. At 2 GHz, a slightly greater supply current is required to obtain similar performance.

The single-ended broadband RF/IF port allows the device to be customized for a desired band of operation using simple external filter networks. The LO-to-RF isolation is based on the LO rejection of the RF port filter network. Greater isolation can be achieved by using higher order filter networks, as described in the

Applications Information section.

The ADL5350 is fabricated on a GaAs pHEMT, high performance IC process. The ADL5350 is available in a 2 mm × 3 mm, 8-lead LFCSP. It operates over a −40°C to +85°C temperature range. An evaluation board is also available.

Rev. 0

Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.

ADL5350

Features .............................................................................................. 1

Applications....................................................................................... 1

Functional Block Diagram .............................................................. 1

General Description......................................................................... 1

Revision History ............................................................................... 2

Specifications..................................................................................... 3

850 MHz Receive Performance .................................................. 3

1950 MHz Receive Performance ................................................ 3

Spur Tables......................................................................................... 4

850 MHz Spur Table..................................................................... 4

1950 MHz Spur Table................................................................... 4

Absolute Maximum Ratings............................................................ 5

ESD Caution.................................................................................. 5

Pin Configuration and Function Descriptions............................. 6

Typical Perf or m an c e Charac t e r istics ..............................................7

850 MHz Characteristics..............................................................7

1950 MHz Characteristics......................................................... 12

Functional Description .................................................................. 17

Circuit Description .................................................................... 17

Implementation Procedure....................................................... 17

Applications Information.............................................................. 19

Low Frequency Applications .................................................... 19

High Frequency Applications................................................... 19

Evaluation Board ............................................................................ 21

Outline Dimensions ....................................................................... 22

Ordering Guide .......................................................................... 22

REVISION HISTORY

2/08—Revision 0: Initial Version

Rev. 0 | Page 2 of 24

ADL5350

SPECIFICATIONS

850 MHz RECEIVE PERFORMANCE

VS = 3 V, TA = 25°C, LO power = 4 dBm, re: 50 Ω, unless otherwise noted.

Table 1.

Parameter Min Typ Max Unit Conditions

RF Frequency Range 750 850 975 MHz LO Frequency Range 500 780 945 MHz Low-side LO IF Frequency Range 30 70 250 MHz Conversion Loss 6.7 dB fRF = 850 MHz, fLO = 780 MHz, fIF = 70 MHz SSB Noise Figure 6.4 dB fRF = 850 MHz, fLO = 780 MHz, fIF = 70 MHz Input Third-Order Intercept (IP3) 25 dBm

Input 1dB Compression Point (P1dB) 19.8 dBm fRF = 820 MHz, fLO = 750 MHz, fIF = 70 MHz LO-to-IF Leakage 29 dBc LO power = 4 dBm, fLO = 780 MHz LO-to-RF Leakage 13 dBc LO power = 4 dBm, fLO = 780 MHz RF-to-IF Leakage 19.5 dBc RF power = 0 dBm, fRF = 850 MHz, fLO = 780 MHz IF/2 Spurious −50 dBc RF power = 0 dBm, fRF = 850 MHz, fLO = 780 MHz Supply Voltage 2.7 3 3.5 V Supply Current 16.5 mA LO power = 4 dBm

= 849 MHz, f

RF1

each RF tone 0 dBm

= 850 MHz, fLO = 780 MHz, fIF = 70 MHz;

RF2

1950 MHz RECEIVE PERFORMANCE

VS = 3 V, TA = 25°C, LO power = 6 dBm, re: 50 Ω, unless otherwise noted.

Table 2.

Parameter Min Typ Max Unit Conditions

RF Frequency Range 1800 1950 2050 MHz LO Frequency Range 1420 1760 2000 MHz Low-side LO IF Frequency Range 50 190 380 MHz Conversion Loss 6.8 dB fRF = 1950 MHz, fLO = 1760 MHz, fIF = 190 MHz SSB Noise Figure 6.5 dB fRF = 1950 MHz, fLO = 1760 MHz, fIF = 190 MHz Input Third-Order Intercept (IP3) 25 dBm

Input 1dB Compression Point (P1dB) 19 dBm fRF = 1950 MHz, fLO = 1760 MHz, fIF = 190 MHz LO-to-IF Leakage 13.5 dBc LO power = 6 dBm, fLO = 1760 MHz LO-to-RF Leakage 10.5 dBc LO power = 6 dBm, fLO = 1760 MHz RF-to-IF Leakage 11.5 dBc RF power = 0 dBm, fRF = 1950 MHz, fLO = 1760 MHz IF/2 Spurious −54 dBc RF power = 0 dBm, fRF = 1950 MHz, fLO = 1760 MHz Supply Voltage 2.7 3 3.5 V Supply Current 19 mA LO power = 6 dBm

= 1949 MHz, f

RF1

each RF tone 0 dBm

RF2

= 1951 MHz, fLO = 1760 MHz, fIF = 190 MHz;

Rev. 0 | Page 3 of 24

ADL5350

SPUR TABLES

All spur tables are (N × fRF) − (M × fLO) mixer spurious products for 0 dBm input power, unless otherwise noted. N.M. indicates that a spur was not measured due to it being at a frequency >6 GHz.

850 MHz SPUR TABLE

Table 3.

0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 0 ≤–100 –20.6 –19.2 –15.3 –16.7 –38.4 –26.6 –22.1 N.M. N.M. N.M. N.M. N.M. N.M. N.M. N.M . 1 –21.6 –5.6 –23. 6 –19. 6 –31.9 –28.7 –46.1 –48.5 –33. 2 N. M. N.M. N. M. N.M. N.M. N. M. N.M. 2 –50.0 –69.2 –50.5 –59.8 –49. 1 –57.5 –51.0 –77.7 –65.8 –60. 8 N.M. N.M. N. M. N.M. N.M. N.M. 3 –74.8 –66.0 –71.8 –68.1 –70. 2 –67.4 –66.9 –70.8 –85.2 –87. 3 –72.2 N. M. N.M. N.M. N.M . N.M. 4 ≤–100 –92.6 –91.6 –96.1 –92.7 –98.7 –90.2 –91.7 –88.8 ≤–100 ≤–100 –91.7 –88.6 N.M. N.M. N.M. 5 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 –99.5 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 N.M. N .M. 6 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 N.M.

7 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 8 N.M. N.M. ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 9 N.M. N.M. N.M. ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 10 N.M. N.M. N.M. N.M. ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 11 N.M. N.M. N.M. N.M. N.M. ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 12 N.M. N.M. N.M. N.M. N.M. N. M. ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 13 N.M. N.M. N.M. N.M. N.M. N. M. N.M. ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 14 N.M. N.M. N.M. N.M. N.M. N.M. N.M. N.M. ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 15 N.M. N.M. N.M. N.M. N.M. N.M. N.M. N.M. N.M. ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100

1950 MHz SPUR TABLE

05615–068

Table 4.

0 ≤–100 –13.1 –32.8 –22.4 N.M. N.M. N. M. N.M . N.M. N.M. N.M. N.M . N.M. N.M. N.M. N. M. 1 –10. 8 –7. 0 –25.3 – 27.7 –33. 9 N.M. N.M. N.M. N.M. N.M. N.M . N.M. N. M. N.M. N. M. N. M. 2 –48. 2 –61. 2 –41. 2 –44.6 –47.0 –74.6 N.M. N.M. N.M. N.M. N. M. N.M . N.M. N.M. N.M. N. M. 3 –72. 3 –71. 4 –83. 6 –64.5 –62.4 –64.3 –83.7 N.M. N. M. N.M. N.M . N.M. N. M. N.M. N. M. N. M. 4 N. M. N.M. –91. 4 –84.2 –78.3 –76.5 –80.0 –92.0 N.M. N. M. N.M. N.M. N.M. N. M. N.M. N.M. 5 N. M. N.M. N.M . –90.8 –82.3 –77.1 –79.5 –83.8 –95.2 N. M. N.M. N.M. N.M. N.M. N.M. N.M. 6 N.M.N.M.N.M.N.M.≤–100 ≤–100 –93.4 –94.5 ≤–100 –99.2 ≤–100 N.M. N.M. N.M. N. M. N.M.

7 N.M.N.M.N.M.N.M.N.M.≤–100 ≤–100 –94.0 –96.4 ≤–100 ≤–100 ≤–100 N.M. N. M. N.M. N.M. 8 N.M.N.M.N.M.N.M.N.M.N.M.≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 N.M . N.M. N.M. 9 N.M.N.M.N.M.N.M.N.M.N.M.N.M.≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 N .M. N. M. 10 N.M. N.M. N.M. N.M. N.M. N.M. N.M. N.M. ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 N.M. 11 N.M. N.M. N.M. N.M. N.M. N.M. N.M. N.M. N.M. ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 12 N.M. N.M. N.M. N.M. N.M. N.M. N.M. N.M. N.M. N.M. ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 13 N.M. N.M. N.M. N.M. N.M. N.M. N.M. N.M. N.M. N.M. N.M. ≤–100 ≤–100 ≤–100 ≤–100 ≤–100 14 N.M. N.M. N.M. N.M. N.M. N.M. N.M. N.M. N.M. N.M. N.M. N.M. N.M. ≤–100 ≤–100 ≤–100 15 N.M. N.M. N.M. N.M. N.M. N.M. N.M. N.M. N.M. N.M. N.M. N.M. N.M. N.M. ≤–100 ≤–100

0123456789101112131415

05615–069

Rev. 0 | Page 4 of 24

ADL5350

ABSOLUTE MAXIMUM RATINGS

Table 5.

Parameter Rating

Supply Voltage, VS 4.0 V RF Input Level 23 dBm LO Input Level 20 dBm Internal Power Dissipation 324 mW θJA 154.3°C/W Maximum Junction Temperature 135°C Operating Temperature Range −40°C to +85°C Storage Temperature Range −65°C to +150°C

Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

ESD CAUTION

Rev. 0 | Page 5 of 24

ADL5350

PIN CONFIGURATION AND FUNCTION DESCRIPTIONS

1RF/IF

2GND2

ADL5350

TOP VIEW

3LOIN

(Not to Scale)

4NC

NC = NO CONNECT

Figure 2. Pin Configuration

8 RF/IF

7NC

6 VPOS

5 GND1

05615-002

Table 6. Pin Function Descriptions

Pin No. Mnemonic Description

1, 8 RF/IF

RF and IF Input/Output Ports. These nodes are internally tied together. RF and IF port separation is

achieved using external tuning networks. 2, 5, Paddle GND2, GND1, GND Device Common (DC Ground). 3 LOIN LO Input. Needs to be ac-coupled. 4, 7 NC No Connect. Grounding NC pins is recommended. 6 VPOS

Positive Supply Voltage for the Drain of the LO Buffer. A series RF choke is needed on the supply line

to provide proper ac loading of the LO buffer amplifier.

Rev. 0 | Page 6 of 24

ADL5350

TYPICAL PERFORMANCE CHARACTERISTICS

850 MHz CHARACTERISTICS

Supply voltage = 3 V, RF frequency = 850 MHz, IF frequency = 70 MHz, RF level = 0 dBm, LO level = 4 dBm, TA = 25°C, unless otherwise noted.

SUPPLY CURRENT (mA)

–40–200 20406080

TEMPERATURE ( °C)

Figure 3. Supply Current vs. Temperature

CONVERSION LOSS (dB)

–40 806040200–20

TEMPERATURE ( °C)

Figure 4. Conversion Loss vs. Temperature

INPUT IP3 (dBm)

–40 806040200–20

TEMPERATURE ( °C)

Figure 5. Input IP3 (IIP3) vs. Temperature

05615-003

05615-004

05615-005

INPUT P1dB (dBm)

SUPPLY CURRENT (mA)

7.4

7.2

7.0

6.8

6.6

6.4

CONVERSION LOSS (dB)

6.2

6.0

–40 806040200–20

TEMPERATURE ( °C)

Figure 6. Input P1dB vs. Temperature

+25°C

–40°C +85°C

2.7 3.53.43.33.23.13.02.92.8

SUPPLY VOLTAGE (V)

Figure 7. Supply Current vs. Supply Voltage

2.7 3.53.43.33.23.13.02.92.8

SUPPLY VOLTAGE (V)

Figure 8. Conversion Loss vs. Supply Voltage

+85°C

+25°C

–40°C

05615-006

05615-007

05615-008

Rev. 0 | Page 7 of 24

ADL5350

Supply voltage = 3 V, RF frequency = 850 MHz, IF frequency = 70 MHz, RF level = 0 dBm, LO level = 4 dBm, TA = 25°C, unless otherwise noted.

INPUT IP3 (dBm)

INPUT P1dB (dBm)

2.7 3.53.43.33.23.13.02.92.8

+85°C

SUPPLY VOLTAGE (V)

Figure 9. Input IP3 vs. Supply Voltage

–40°C

+25°C

+85°C

–40°C

+25°C

SUPPLY CURRENT (mA)

750 975950925900875850825800775

05615-009

–40°C

+25°C

RF FREQUENCY ( MHz)

+85°C

05615-012

Figure 12. Supply Current vs. RF Frequency

7.6

7.4

7.2

7.0

6.8

6.6

6.4

CONVERSION LOSS (dB)

6.2

6.0

+85°C

+25°C

–40°C

NOISE FI GURE (dB)

2.7 3.53.43.33.23.13.02.92.8

SUPPLY VOLTAGE (V)

Figure 10. Input P1dB vs. Supply Voltage

8.0

7.5

7.0

6.5

6.0

5.5

5.0

2.7 3. 53.43.33.23.13.02.92.8

SUPPLY VOLTAGE (V)

Figure 11. Noise Figure vs. Supply Voltage

05615-010

05615-011

5.8 750 800 850 900 950

RF FREQUENCY (M Hz)

Figure 13. Conversion Loss vs. RF Frequency

27.0

26.5

INPUT IP3 (dBm)

26.0

25.5

25.0

24.5

24.0

23.5

23.0

22.5

22.0 750 975950925900875850825800775

+85°C

RF FREQUENCY (M Hz)

–40°C

+25°C

Figure 14. Input IP3 vs. RF Frequency

05615-013

05615-014

Rev. 0 | Page 8 of 24

ADL5350

Supply voltage = 3 V, RF frequency = 850 MHz, IF frequency = 70 MHz, RF level = 0 dBm, LO level = 4 dBm, TA = 25°C, unless otherwise noted.

INPUT P1dB (dBm)

750 975950925900875850825800775

–40°C

+25°C

+85°C

RF FREQUENCY (M Hz)

Figure 15. Input P1dB vs. RF Frequency

05615-015

+25°C

CONVERSION LOSS (dB)

25 50 75 100 125 150 175 200 225 250

+85°C

–40°C

IF FREQUENCY (MHz)

Figure 18. Conversion Loss vs. IF Frequency

05615-018

NOISE FI GURE (dB)

750 775 800 825 850 875 900 925 950 975

RF FREQ UENCY ( MHz)

Figure 16. Noise Figure vs. RF Frequency

SUPPLY CURRENT (mA)

+25°C

+85°C

–40°C

INPUT IP3 (dBm)

25 50 75 100 125 150 175 200 225 250

05615-016

+25°C

+85°C

IF FREQUENCY (MHz)

05615-019

Figure 19. Input IP3 vs. IF Frequency

INPUT P1dB (dBm)

–40°C

+25°C

+85°C

25 50 75 100 125 150 175 200 225 250

IF FREQUENCY (MHz)

Figure 17. Supply Current vs. IF Frequency

05615-017

25 50 75 100 125 150 175 200 225 250

IF FREQUENCY (MHz)

Figure 20. Input P1dB vs. IF Frequency

05615-020

Rev. 0 | Page 9 of 24

ADL5350

Supply voltage = 3 V, RF frequency = 850 MHz, IF frequency = 70 MHz, RF level = 0 dBm, LO level = 4 dBm, TA = 25°C, unless otherwise noted.

NOISE FI GURE (dB)

SUPPLY CURRENT (mA)

50 350300250200150100

–6 121086420–2–4

IF FREQUENCY (MHz)

Figure 21. Noise Figure vs. IF Frequency

+85°C

–40°C

+25°C

LO LEVEL (dBm)

Figure 22. Supply Current vs. LO Level

05615-021

05615-022

INPUT IP3 (dBm)

INPUT P1dB (dBm)

–6 121086420–2–4

+85°C

–6 121086420–2–4

LO LEVEL (dBm)

Figure 24. Input IP3 vs. LO Level

–40°C

+25°C

LO LEVEL (dBm)

Figure 25. Input P1dB vs. LO Level

+25°C

–40°C

+85°C

05615-024

05615-025

NOISE FI GURE (dB)

–2 1086420

LO LEVEL (dBm)

Figure 26. Noise Figure vs. LO Level

05615-026

CONVERSION LOSS (dB)

–6 121086420–2–4

+85°C

–40°C

+25°C

LO LEVEL (dBm)

05615-023

Figure 23. Conversion Loss vs. LO Level

Rev. 0 | Page 10 of 24

ADL5350

–

Supply voltage = 3 V, RF frequency = 850 MHz, IF frequency = 70 MHz, RF level = 0 dBm, LO level = 4 dBm, TA = 25°C, unless otherwise noted.

IF FEEDT HROUGH (dBc)

–14

–15

–16

–17

–18

–19

–20

–21

–40°C

+25°C

+85°C

750 975950925900875850825800775

RF FREQUENCY (M Hz)

Figure 27. IF Feedthrough vs. RF Frequency

–20

–25

–30

+25°C

+85°C

05615-027

–2

–4

–6

–8

–10

–12

RF LEAKAGE ( dBc)

–14

–16

–18

–20

630 680 730 780 830 880 930

LO FREQUENCY (MHz)

Figure 29. RF Leakage vs. LO Frequency

05615-029

–35

IF FEEDT HROUGH (dBc)

–40

–45

680 905880855830805780755730705

LO FREQUENCY (MHz)

–40°C

05615-028

Figure 28. IF Feedthrough vs. LO Frequency

Rev. 0 | Page 11 of 24

ADL5350

1950 MHz CHARACTERISTICS

Supply voltage = 3 V, RF frequency = 1950 MHz, IF frequency = 190 MHz, RF level = −10 dBm, LO level = 6 dBm, TA = 25°C, unless otherwise noted.

SUPPLY CURRENT (mA)

–40–200 20406080

TEMPERATURE ( °C)

Figure 30. Supply Current vs. Temperature

CONVERSION LOSS (dB)

0 –40–200 20406080

TEMPERATURE ( °C)

Figure 31. Conversion Loss vs. Temperature

INPUT IP3 (dBm)

–40 –20 0 20 40 60 80

TEMPERATURE (° C)

Figure 32. Input IP3 vs. Temperature

05615-030

05615-031

05615-032

INPUT P1dB (dBm)

–40–200 20406080

TEMPERATURE ( °C)

Figure 33. Input P1dB vs. Temperature

+25°C

+85°C

SUPPLY VOLTAGE (V)

SUPPLY CURRENT (mA)

2.7 3.53.43.33.23.13.02.92.8

–40°C

Figure 34. Supply Current vs. Supply Voltage

7.4

7.2

+85°C

+25°C

–40°C

CONVERSION LOSS (dB)

7.0

6.8

6.6

6.4

6.2

6.0

2.7 3.53.43.33.23.13.02.92.8

SUPPLY VOLTAGE (V)

Figure 35. Conversion Loss vs. Supply Voltage

05615-033

05615-034

05615-035

Rev. 0 | Page 12 of 24

ADL5350

Supply voltage = 3 V, RF frequency = 1950 MHz, IF frequency = 190 MHz, RF level = −10 dBm, LO level = 6 dBm, TA = 25°C, unless otherwise noted.

INPUT IP3 (dBm)

+85°C

+25°C

–40°C

+25°C

SUPPLY CURRENT (mA)

+85°C

–40°C

INPUT P1dB (dBm)

NOISE FI GURE (dB)

2.7 3.53.43.33.23.13.02.92.8

SUPPLY VOLTAGE (V)

Figure 36. Input IP3 vs. Supply Voltage

2.7 3.53.43.33.23.13.02.92.8

SUPPLY VOLTAGE (V)

Figure 37. Input P1dB vs. Supply Voltage

8.0

7.5

7.0

6.5

6.0

5.5

5.0

2.7 3.53.43.33.23.13.02.92.8

SUPPLY VOLTAGE (V)

Figure 38. Noise Figure vs. Supply Voltage

+85°C

+25°C

–40°C

1800 1825 1850 1875 1900 1925 1950 1975 2000 2025 2050

05615-036

RF FREQUENCY (MHz)

05615-039

Figure 39. Supply Current vs. RF Frequency

7.6

7.4

7.2

7.0

6.8

6.6

6.4

CONVERSION LOSS (dB)

6.2

6.0

5.8 1800 2050202520001975195019251900187518501825

05615-037

RF FREQ UENCY ( MHz)

+85°C

+25°C

–40°C

05615-040

Figure 40. Conversion Loss vs. RF Frequency

27.0

26.5

26.0

25.5

25.0

24.5

24.0

INPUT IP3 (dBm)

23.5

23.0

22.5

22.0 1800 2050202520001975195019251900187518501825

05615-038

RF FREQ UENCY ( MHz)

+85°C

+25°C

–40°C

05615-041

Figure 41. Input IP3 vs. RF Frequency

Rev. 0 | Page 13 of 24

ADL5350

Supply voltage = 3 V, RF frequency = 1950 MHz, IF frequency = 190 MHz, RF level = −10 dBm, LO level = 6 dBm, TA = 25°C, unless otherwise noted.

–40°C

INPUT P1dB (dBm)

1800 2050202520001975195019251900187518501825

+85°C

+25°C

RF FREQ UENCY ( MHz)

Figure 42. Input P1dB vs. RF Frequency

NOISE FI GURE (dB)

1800 1825 1850 1875 1900 1925 1950 1975 2000 2025 2050

RF FREQUENCY (MHz)

Figure 43. Noise Figure vs. RF Frequency

+25°C

05615-042

05615-043

CONVERSION LOSS (dB)

50 37535030025020015010075 325275225175125

INPUT IP3 (dBm)

50 37535030025020015010075 325275225175125

+85°C

–40°C+25°C

IF FREQUENCY (MHz)

Figure 45. Conversion Loss vs. IF Frequency

+85°C

+25°C

–40°C

IF FREQUENCY (MHz)

Figure 46. Input IP3 vs. IF Frequency

05615-045

05615-046

SUPPLY CURRENT (mA)

50 37535030025020015010075 325275225175125

+85°C

–40°C

IF FREQUE NCY (MHz)

Figure 44. Supply Current vs. IF Frequency

05615-044

INPUT P1dB (dBm)

50 37535030025020015010075 325275225175125

+85°C

IF FREQUENCY (MHz)

Figure 47. Input P1dB vs. IF Frequency

–40°C

+25°C

05615-047

Rev. 0 | Page 14 of 24

ADL5350

Supply voltage = 3 V, RF frequency = 1950 MHz, IF frequency = 190 MHz, RF level = −10 dBm, LO level = 6 dBm, TA = 25°C, unless otherwise noted.

NOISE FI GURE (dB)

INPUT IP3 (dBm)

+25°C

+85°C

–40°C

SUPPLY CURRENT (mA)

CONVERSION LOSS (dB)

50 350300250200150100

–6 121086420–2–4

+85°C

IF FREQUENCY (MHz)

Figure 48. Noise Figure vs. IF Frequency

+25°C

+85°C

–40°C

LO LEVEL (dBm)

Figure 49. Supply Current vs. LO Level

–40°C

+25°C

–6 121086420–2–4

05615-048

LO LEVEL (dBm)

05615-051

Figure 51. Input IP3 vs. LO Level

INPUT P1dB (dBm)

–6 121086420–2–4

05615-049

+85°C

–40°C

+25°C

LO LEVEL (dBm)

05615-052

Figure 52. Input P1dB vs. LO Level

NOISE FI GURE (dB)

–6 121086420–2–4

LO LEVEL (dBm)

Figure 50. Conversion Loss vs. LO Level

05615-050

–2 1086420

LO LEVEL (dBm)

Figure 53. Noise Figure vs. LO Level

05615-053

Rev. 0 | Page 15 of 24

ADL5350

–

Supply voltage = 3 V, RF frequency = 1950 MHz, IF frequency = 190 MHz, RF level = −10 dBm, LO level = 6 dBm, TA = 25°C, unless otherwise noted.

IF FEEDT HROUGH (dBc)

–9

–10

–11

–12

–13

–14

–15

1800 2050202520001975195019251900187518501825

–9

–10

–11

–12

–13

–14

–15

–16

–17

–18

1610 186018351785 1810176017351710168516601635

–40°C

+85°C

RF FREQ UENCY ( MHz)

Figure 54. IF Feedthrough vs. RF Frequency

–40°C

+85°C

LO FREQUENCY (MHz)

+25°C

05615-054

05615-055

–2

–4

–6

–8

RF LEAKAGE ( dBc)

–10

–12

–14

1560 1610 1660 1710 1760 1810 1860 1910 1960

LO FREQUE NCY (MHz)

Figure 56. RF Leakage vs. LO Frequency

05615-056

Figure 55. IF Feedthrough vs. LO Frequency

Rev. 0 | Page 16 of 24

ADL5350

FUNCTIONAL DESCRIPTION

CIRCUIT DESCRIPTION

The ADL5350 is a GaAs pHEMT, single-ended, passive mixer with an integrated LO buffer amplifier. The device relies on the varying drain to source channel conductance of a FET junction to modulate an RF signal. A simplified schematic is shown in

VPOS

LOIN

INPU

The LO signal is applied to the gate contact of a FET-based buffer amplifier. The buffer amplifier provides sufficient gain of the LO signal to drive the resistive switch. Additionally, feedback circuitry provides the necessary bias to the FET buffer amplifier and RF/IF ports to achieve optimum modulation efficiency for common cellular frequencies.

The mixing of RF and LO signals is achieved by switching the channel conductance from the RF/IF port to ground at the rate of the LO. The RF signal is passed through an external band-pass network to help reject image bands and reduce the broadband noise presented to the mixer. The bandlimited RF signal is presented to the time-varying load of the RF/IF port, which causes the envelope of the RF signal to be amplitude modulated at the rate of the LO. A filter network applied to the IF port is necessary to reject the RF signal and pass the wanted mixing product. In a downconversion application, the IF filter network is designed to pass the difference frequency and present an open circuit to the inc ident R F f r e qu e nc y. S i mi l arly, for an up conversion application, the filter is designed to pass the sum frequency and reject the incident RF. As a result, the frequency response of the mixer is determined by the response characteristics of the external RF/IF filter networks.

Figure 57.

GND1 GND2

Figure 57. Simplified Schematic

INPUT

OR OUTPUT

IF OUTPUT OR INPUT

05615-057

IMPLEMENTATION PROCEDURE

The ADL5350 is a simple single-ended mixer that relies on off-chip circuitry to achieve effective RF dynamic performance. The following steps should be followed to achieve optimum performance (see component designations):

Figure 58. Reference Schematic

C2L2

8765

RF/IF NC VPOS

ADL5350

RF/IF GND2 LOIN NC

1234

1. Tab l e 7 shows the recommended LO bias inductor

values for a variety of LO frequencies. To ensure efficient commutation of the mixer, the bias inductor needs to be properly set. For other frequencies within the range shown, the values can be interpolated. For frequencies outside this range, see the

Applications Information section.

Table 7. Recommended LO Bias Inductor

Desired LO Frequency (MHz)

380 68 750 24 1000 18 1750 3.8 2000 2.1

The bias inductor should have a self-resonant frequency greater than

the intended frequency of operation.

Figure 58 for

GND1

Recommended LO Bias Inductor, L4

(nH)

05615-058

Rev. 0 | Page 17 of 24

ADL5350

2. Tune the LO port input network for optimum return

loss. Typically, a band-pass network is used to pass the LO signal to the LOIN pin. It is recommended to block high frequency harmonics of the LO from the mixer core. LO harmonics cause higher RF frequency images to be downconverted to the desired IF frequency and result in sensitivity degradation. If the intended LO source has poor harmonic distortion and spectral purity, it may be necessary to employ a higher order band-pass filter network.

Figure 58 illustrates a simple LC bandpass filter used to pass the fundamental frequency of the LO source. Capacitor C3 is a simple dc block, while the Series Inductor L3, along with the gate-to-source capacitance of the buffer amplifier, form a low-pass network. The native gate input of the LO buffer (FET) alone presents a rather high input impedance. The gate bias is generated internally using feedback that can result in a positive return loss at the intended LO frequency.

If a better than −10 dB return loss is desired, it may be necessary to add a shunt resistor to ground before the coupling capacitor (C3) to present a lower loading impedance to the LO source. In doing so, a slightly greater LO drive level may be required.

3. Design the RF and IF filter networks.

Figure 58 depicts simple LC tank filter networks for the IF and RF port interfaces. The RF port LC network is designed to pass the RF input signal. The series LC tank has a resonant frequency at 1/(2π√LC). At resonance, the series reactances are canceled, which presents a series short to the RF signal. A parallel LC tank is used on the IF port to reject the RF and LO signals. At resonance, the parallel LC tank presents an open circuit.

It is necessary to account for the board parasitics, finite Q, and self-resonant frequencies of the LC components when designing the RF, IF, and LO filter networks.

Tabl e 8

provides suggested values for initial prototyping.

Table 8. Suggested RF, IF, and LO Filter Networks for Low-Side LO Injection

RF Frequency (MHz) L1 (nH)

450 8.3 10 10 10 10 100 850 6.8 4.7 4.7 5.6 8.2 100 1950 1.7 1.5 1.7 1.2 3.5 100 2400 0.67 1 1.5 0.7 3.0 100

The inductor should have a self-resonant frequency greater than the intended frequency of operation. L1 should be a high Q inductor for optimum NF performance.

C1 (pF) L2 (nH) C2 (pF) L3 (nH) C3 (pF)

Rev. 0 | Page 18 of 24

ADL5350

APPLICATIONS INFORMATION

LOW FREQUENCY APPLICATIONS

The ADL5350 can be used in low frequency applications. The circuit in and an IF of 45 MHz using a high-side LO. The series and parallel resonant circuits are tuned for 154 MHz, which is the geometric mean of the desired RF frequencies. The performance of this circuit is depicted in

Figure 59 is designed for an RF of 136 MHz to 176 MHz

Figure 60.

4.7µF

IIP3

100nF

100nH

1nF

GND1

05615-061

LL INDUCTO RS RE 0603CS ERIES FROM OILCRAFT

36nH

10nF

27pF36nH

8765

RF/IF NC VPOS

ADL5350

RF/IF GND2 LOIN NC

1234

27pF

Figure 59. 136 MHz to 176 MHz RF Downconversion Schematic

HIGH FREQUENCY APPLICATIONS

The ADL5350 can be used at extended frequencies with some careful attention to board and component parasitics. Figure 61 is an example of a 2560 MHz to 2660 MHz downconversion using a low-side LO. The performance of this circuit is depicted in values are very small, especially for the RF and IF ports. Above

2.5 GHz, it is necessary to consider alternate solutions to avoid unreasonably small inductor and capacitor values.

Figure 61. 2560 MHz to 2660 MHz RF Downconversion Schematic

Figure 62. Note that the inductor and capacitor

4.7µF

100pF

3.0nH

LL INDUCTO RS

RE 0302CS SERIES FROM COILCRAFT

1nF

0.7pF1.5nH

8765

RF/IF NC VPOS

ADL5350

RF/IF GND2 LOIN NC

1234

0.67nH

1pF

2.1nH

100pF

GND1

5615-062

IP1dB, IIP3 (dBm)

136 176166156146

RF FREQUENCY (M Hz)

LOSS

IP1dB

Figure 60. Measured Performance for Circuit in

Using High-Side LO Injection and 45 MHz IF

Figure 59

CONVERSION LOSS (dB)

05615-065

IP1dB, IIP3 (dBm)

2560 26602580 2600 2620 2640

IIP3

IP1dB

LOSS

RF FREQUENCY (MHz)

Figure 62. Measured Performance for Circuit in

Figure 61

CONVERSION LOSS (dB)

05615-066

Using Low-Side LO Injection and 374 MHz IF

The typical networks used for cellular applications below

2.6 GHz use band-select and band-reject networks on the RF and IF ports. At higher RF frequencies, these networks are not easily realized by using lumped element components. As a result, it is necessary to consider alternate filter network topologies to allow more reasonable values for inductors and capacitors.

Rev. 0 | Page 19 of 24

ADL5350

Figure 63 depicts a crossover filter network approach to provide isolation between the RF and IF ports for a downconverting application. The crossover network essentially provides a highpass filter to allow the RF signal to pass to the RF/IF node (Pin 1 and Pin 8), while presenting a low-pass filter (which is actually a band-pass filter when considering the dc blocking capacitor, C

). This allows the difference component (fRF − fLO) to be

passed to the desired IF load.

INDUCTORS

RE 0302CS ERIES FROM OILCRAFT

3.5nH

1.8pF

1.5nH

8765

RF/IF NC VPOS

RF/IF GND2 LOI N NC

1234

1.2pF

100pF

4.7µF

ADL5350

100pF

3.8nH

2.2nH

100pF

GND1

05615-064

Figure 63. 3.3 GHz to 3.8 GHz RF Downconversion Schematic

When designing the RF port and IF port networks, it is important to remember that the networks share a common node (the RF/IF pins). In addition, the opposing network presents some loading impedance to the target network being designed.

Classic audio crossover filter design techniques can be applied to help derive component values. However, some caution must be applied when selecting component values. At high RF frequencies, the board parasitics can significantly influence the final optimum inductor and capacitor component selections. Some empirical testing may be necessary to optimize the RF and IF port filter networks. The performance of the circuit depicted in is provided in

IP1dB, IIP3 (dBm)

Figure 64.

IIP3

IP1dB

LOSS

0 3300 38003700360035003400

Figure 64. Measured Performance for Circuit in

Using Low-Side LO Injection and 800 MHz IF

RF FREQUENCY (M Hz)

Figure 63

CONVERSION LOSS (dB)

05615-067

Figure 63

Rev. 0 | Page 20 of 24

ADL5350

EVALUATION BOARD

An evaluation board is available for the ADL5350. The evaluation board has two halves: a low band board designated as Board A and a high band board designated as Board B. The schematic for the evaluation board is shown in

POS-

C5-A

IF-A

C6-A

C4-A

C2-AL2-A

L4-A

IF-B

C6-B

C2-BL2-B

Figure 65.

POS-B

C5-B

C4-B

L4-B

8765

RF/IF NC VPOS

U1-B

ADL5350

RF/IF GND2 LOIN NC

1234

C1-B

L1-B

LO-B

L3-B

C3-B

GND1

05615-059

RF-A

8765

RF/IF NC VPOS

U1-A

ADL5350

RF/IF GND2 LOIN NC

1234

C1-A

L1-A

LO-A

L3-A

C3-A

GND1

RF-B

Figure 65. Evaluation Board

Table 9. Evaluation Board Configuration Options

Component Function Default Conditions

C4-A, C4-B, C5-A, C5-B

Supply Decoupling. C4-A and C4-B provide local bypassing of the supply. C5-A and C5-B are used to filter the ripple of a noisy supply line. These are not

C4-A = C4-B = 100 pF, C5-A = C5-B = 4.7 μF

always necessary.

L1-A, L1-B, C1-A, C1-B

RF Input Network. Designed to provide series resonance at the intended RF frequency.

L1-A = 6.8 nH (0603CS from Coilcraft), L1-B = 1.7 nH (0302CS from Coilcraft), C1-A = 4.7 pF, C1-B = 1.5 pF

L2-A, L2-B, C2-A, C2-B, C6-A, C6-B

IF Output Network. Designed to provide parallel resonance at the geometric mean of the RF and LO frequencies.

L2-A = 4.7 nH (0603CS from Coilcraft), L2-B = 1.7 nH (0302CS from Coilcraft), C2-A = 5.6 pF, C2-B = 1.2 pF, C6-A = C6-B = 1 nF

L3-A, L3-B, C3-A, C3-B

LO Input Network. Designed to block dc and optimize LO voltage swing at LOIN.

L3-A = 8.2 nH (0603CS from Coilcraft), L3-B = 3.5 nH (0302CS from Coilcraft), C3-A = C3-B = 100 pF

L4-A, L4-B

LO Buffer Amplifier Choke. Provides bias and ac loading impedance to LO buffer amplifier.

L4-A = 24 nH (0603CS from Coilcraft), L4-B = 3.8 nH (0302CS from Coilcraft)

Rev. 0 | Page 21 of 24

ADL5350

OUTLINE DIMENSIONS

3.25

3.00

PIN 1

INDICATO

1.00

0.85

0.80

SEATING

1.95

1.75

1.55

PLANE

12° MAX

2.75

TOP VIEW

2.95

2.75

2.55

0.30

0.23

0.18

0.80 MAX

0.65 TYP

2.25

2.00

1.75

0.20 REF

0.60

0.45

0.30

0.50 BSC

0.05 MAX

0.02 NOM

Figure 66. 8-Lead Lead Frame Chip Scale Package [LFCSP_VD]

2 mm × 3 mm Body, Very Thin, Dual Lead

(CP-8-1)

Dimensions shown in millimeters

1.89

1.74

1.59

BOTTOM VIEW

EXPOSED PAD

4 1

0.25

0.20

0.15

0.10

0.05

0.55

0.40

0.30

ORDERING GUIDE

Package

Model Temperature Range Package Description

Option

Branding

ADL5350ACPZ-R71−40°C to +85°C 8-Lead Lead Frame Chip Scale Package [LFCSP_VD] CP-8-1 08 3000, Reel ADL5350ACPZ-WP1−40°C to +85°C 8-Lead Lead Frame Chip Scale Package [LFCSP_VD] CP-8-1 08 50, Waffle Pack ADL5350-EVALZ

Z = RoHS Compliant Part.

Evaluation Board

Ordering Quantity

Rev. 0 | Page 22 of 24

ADL5350

NOTES

Rev. 0 | Page 23 of 24

ADL5350

NOTES

Rev. 0 | Page 24 of 24

Datasheet ADL5350 Datasheet (ANALOG DEVICES)

Specifications and Main Features

Frequently Asked Questions

User Manual

FEATURES

APPLICATIONS

FUNCTIONAL BLOCK DIAGRAM

GENERAL DESCRIPTION

TABLE OF CONTENTS

REVISION HISTORY

SPECIFICATIONS

850 MHz RECEIVE PERFORMANCE

1950 MHz RECEIVE PERFORMANCE

SPUR TABLES

850 MHz SPUR TABLE

1950 MHz SPUR TABLE

ABSOLUTE MAXIMUM RATINGS

ESD CAUTION

PIN CONFIGURATION AND FUNCTION DESCRIPTIONS

TYPICAL PERFORMANCE CHARACTERISTICS

850 MHz CHARACTERISTICS

1950 MHz CHARACTERISTICS

FUNCTIONAL DESCRIPTION

CIRCUIT DESCRIPTION

IMPLEMENTATION PROCEDURE

APPLICATIONS INFORMATION

LOW FREQUENCY APPLICATIONS

HIGH FREQUENCY APPLICATIONS

EVALUATION BOARD

OUTLINE DIMENSIONS

ORDERING GUIDE