Internally matched to 50 Ω input and output
Internally biased
Operating frequency: 700 MHz to 1000 MHz
Gain: 20 dB
OIP3: 45 dBm
P1 dB: 27 dBm
Noise figure: 5 dB
3 mm × 3 mm LFCSP
Power supply: 5 V
APPLICATIONS
CDMA2000, WCDMA, and GSM base station transceivers and
high power amplifiers
GENERAL DESCRIPTION
The ADL5322 is a high linearity GaAs driver amplifier that is
internally matched to 50 Ω for operation in the 700 MHz to
1000 MHz frequency range. The amplifier, which has a gain of
20 dB, is specially designed for use in the output stage of a
cellular base station radio or as an input preamplifier in a
multicarrier base station power amplifier. Matching and biasing
are all on-chip. The ADL5322 is available in a Pb-free, 3mm ×
3 mm, 8-lead LFCSP package with an operating temperature
from −40°C to +85°C.
Matched RF PA Predriver
ADL5322
FUNCTIONAL BLOCK DIAGRAM
VCC 5
GND 6
GND 7
RFIN 8
BIAS CONTROL
INPUT
MATCH
ADL5322
OUTPUT
MATCH
Figure 1.
4 RFOUT
3 GND
2 VCC
1 VCC
06057-001
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
FREQUENCY RANGE 700 1000 MHz
GAIN Frequency = 850 MHz 19 20.3 21.4 dB
vs. Frequency 832 MHz to 870 MHz ±0.125 dB
vs. Temperature −40°C to +85°C ±1 dB
vs. Voltage 5 V, @ 5% (4.75 V to 5.25 V) ±0.1 dB
Frequency = 900 MHz 18.6 19.9 21.1 dB
vs. Frequency 869 MHz to 894 MHz ±0.125 dB
vs. Temperature −40°C to +85°C ±1 dB
vs. Voltage 5 V, @ 5% (4.75 V to 5.25 V) ±0.1 dB
Frequency = 950 MHz 18.3 19.6 20.8 dB
vs. Frequency 925 MHz to 960 MHz ±0.125 dB
vs. Temperature −40°C to +85°C ±1.1 dB
vs. Voltage 5 V, @ 5% (4.75 V to 5.25 V) ±0.1 dB
P1 dB Frequency = 850 MHz 27.0 27.7 dBm
vs. Frequency 832 MHz to 870 MHz ±0.1 dBm
vs. Temperature −40°C to +85°C ±1 dBm
vs. Voltage 5 V, @ 5% (4.75 V to 5.25 V) ±0.3 dBm
Frequency = 900 MHz 27.3 27.9 dBm
vs. Frequency 869 MHz to 894 MHz ±0.1 dBm
vs. Temperature −40°C to +85°C ±1 dBm
vs. Voltage 5 V, @ 5% (4.75 V to 5.25 V) ±0.4 dBm
Frequency = 950 MHz 26.7 27.5 dBm
vs. Frequency 925 MHz to 960 MHz ±0.2 dBm
vs. Temperature −40°C to +85°C ±1 dBm
vs. Voltage 5 V, @ 5% (4.75 V to 5.25 V) ±0.4 dBm
NOISE FIGURE Frequency = 830 MHz to 960 MHz 5 dB
INPUT RETURN LOSS Frequency = 830 MHz to 960 MHz −10 dB
OUTPUT RETURN LOSS Frequency = 830 MHz to 960 MHz −10 dB
OIP3 Carrier spacing = 1 MHz, P
Frequency = 850 MHz 44.8 dBm
vs. Frequency 832 MHz to 870 MHz ±0.25 dBm
vs. Temperature −40°C to +85°C ±3.0 dBm
vs. Voltage 5 V, @ 5% (4.75 V to 5.25 V) ±0.5 dBm
Frequency = 900 MHz 45.3 dBm
vs. Frequency 869 MHz to 894 MHz ±0.25 dBm
vs. Temperature −40°C to +85°C ±2.7 dBm
vs. Voltage 5 V, @ 5% (4.75 V to 5.25 V) ±0.8 dBm
Frequency = 950 MHz 44.4 dBm
vs. Frequency 925 MHz to 960 MHz ±0.25 dBm
vs. Temperature −40°C to +85°C ±2.2 dBm
vs. Voltage 5 V, @ 5% (4.75 V to 5.25 V) ±0.8 dBm
POWER SUPPLY
Supply Voltage 4.75 5 5.25 V
Supply Current P
Operating Temperature −40 +85 °C
= 5 dBm 320 mA
OUT
= 5 dBm per carrier
OUT
Rev. 0 | Page 3 of 12
Page 4
ADL5322
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter Rating
Supply Voltage, VPOS 6 V
Input Power (re: 50 Ω) 18 dBm
Equivalent Voltage 1.8 V rms
θ
(Soldered) 28.5°C/W
JC
Maximum Junction Temperature 150°C
Operating Temperature Range −40°C to +85°C
Storage Temperature Range −65°C to +150°C
Soldering Temperature 260°C
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Rev. 0 | Page 4 of 12
Page 5
ADL5322
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
PIN 1
VCC 1
VCC 2
GND 3
RFOUT 4
Figure 2. Pin Configuration
Table 3. Pin Function Descriptions
Pin No. Mnemonic Description
1, 2, 5 VCC
Positive 5 V Supply Voltage. Bypass these three pins with independent power supply decoupling
networks (100 pF, 10 nF, and 10 μF).
3, 6, 7 GND Device Ground.
4 RFOUT RF Output. Internally matched to 50 Ω.
8 RFIN RF Input. Internally matched to 50 Ω.
N/A EP Exposed Paddle. Connect to ground plane via a low impedance path.
Figure 10. Input S11 and Output S22 Return Loss vs. Frequency
7
6
5
4
3
FREQUENCY
2
1
0
43.6
43.8 44.0 44.2 44.4 44.6 44.8 45.0 45.2
06057-009
OIP3 (dBm)
06057-011
Figure 11. Distribution of OIP3 at 950 MHz
06057-010
Rev. 0 | Page 7 of 12
Page 8
ADL5322
–
BASIC CONNECTIONS
Figure 14 shows the basic connections for operating the
ADL5322. Each of the three power supply lines should be
decoupled with 10 μF, 10 nF, and 100 pF capacitors. Pin 3, Pin 6,
Pin 7, and the exposed paddle under the device should all be
connected to a low impedance ground plane. If multiple ground
planes are being used, these should be stitched together with
vias under the device to optimize thermal conduction. See
recommended land pattern in
Figure 12.
06057-013
Figure 12. Recommended Land Pattern
CDMA2000 DRIVING APPLICATION
Figure 13 shows a plot of the spectrum of an ADL5323 driving
at 4-carrier CDMA2000 signal at 0 dBm per carrier (total
carrier power = 6 dBm), centered at 880 MHz. At 750 kHz
and 1.98 MHz offset, adjacent channel power ratios of −59 dBc
and −84 dBc (measured in 30 kHz with respect to the 1.22 MHz
carrier) are observed. At 4 MHz carrier offset, −73 dBc is
measured in a 1 MHz bandwidth (−133 dBm/Hz). Note that
the spectrum of the four carriers is slightly rounded due the
frequency response of the cavity-tuned filter that was used to
filter out the noise and distortion of the source signal.
10
–20
–30
–40
–50
–60
(dBm)
–70
–80
–90
–100
–110
CENTER 881.875M HzSPAN 10MHz
1MHz/
Figure 13. Spectrum of 4 Adjacent CDMA2000 Carriers Centered at 880 MHz;
CH PWR = 0.26d Bm
ACP UP = –59.33dB
ALT1 UP = –84.35dB
ALT2 UP = –72.74dB
06057-014
C5
100pF
RFOUT
VCC
RFIN
C1
10µFC310nF
C4
100pF
C2
100pF
AGNDAGNDAGND
AGND
ADL5322
5
VCC
6
GND
7
GND
8
RFINVCC
EP
RFOUT
GND
VCC
4
3
2
1
AGND
C6
100pFC710nF
C9
100pF
C10
10nF
C8
10µF
AGNDAGNDAGND
C11
10µF
AGNDAGNDAGND
VCC
VCC
6057-012
Figure 14. Basic Connections
Rev. 0 | Page 8 of 12
Page 9
ADL5322
–
–
Figure 15 shows how ACP varies with output power level. The
close-in ACP is a function of the signal coding and is unaffected
by output headroom at these power levels. The ACP measured
at 1.98 MHz carrier offset is −72 dBc at 10 dBm output power
(12 dB below the required 60 dBc). At 4 MHz carrier offset, the
noise and distortion measured in a 1 MHz bandwidth is −75 dBm
at 6 dBm (total) output power (0 dBm per carrier). In a 50 dBm
transmitter, this corresponds to an antenna-referred output
power of −31 dBm (1 MHz), which is 18 dB below what is
required by the CDMA2000 standard.
ACP1 AND ACP2 – 30kHz RBW (d Bc)
–100
30
–40
–50
ACP1 (dBc) – 750kHz OFFSET – 30kHz RBW
–60
ACP3 (dBm) – 4MHz OFFSET – 1MHz RBW
–70
–80
ACP2 (dBc) – 1. 98 M Hz OFFSE T – 30kHz RBW
–90
–10
–8–6–4–202468
OUTPUT POWER (dBm)
30
–40
–50
–60
–70
–80
ACP3 – 1MHz RBW (dBm)
–90
–100
10
Figure 15. CDMA2000 ACP vs. Output Power per Carrier; 4 Adjacent Carriers
06057-015
Rev. 0 | Page 9 of 12
Page 10
ADL5322
EVALUATION BOARD
Figure 17 shows the schematic of the ADL5322 evaluation
board. The board is powered by a single supply in the 4.75 V to
5.25 V range. The power supply is decoupled on each of the
three power supply pins by 10 μF, 10 nF, and 100 pF capacitors.
See
Tabl e 5 for exact evaluation board component values. Note
that all three VCC pins (Pin 1, Pin 2, and Pin 5) should be
independently bypassed as shown in
operation.
Table 5. Evaluation Board Components
Component Function Default Value
DUT1 Driver amplifier ADL5322
C1, C12, C16 Low frequency bypass capacitors 10 μF, 0603
C3, C11, C17 Low frequency bypass capacitors 10 nF, 0402
C2, C10, C18 High frequency bypass capacitors 100 pF, 0402
C8, C9, C13, C14, R3 Open Open, 0402
R2, R4 AC coupling capacitors 100 pF, 0402
VCC
RFIN
C1
10µFC310nF
Figure 17 for proper
C2
100pF
AGNDAGNDAGND
R2
100pF
C8
OPENC9OPEN
AGND
AGNDAGND
ADL5322/
ADL5323
5
VCC
6
GND
7
GND
8
RFINVCC
DUT1
GND
RFOUT
GND
VCC
06057-016
Figure 16. Evaluation Board Component Side View
R4
100pF
C13
OPEN
R3
OPEN
AGND
C10
100pF
C18
100pF
4
3
2
1
VCCVCC
C11
10nF
C17
10nF
C14
OPEN
AGNDAGND
C12
10µF
AGNDAGNDAGND
C16
10µF
AGNDAGNDAGND
SNS1
RFOUT
TP2
VCC
TP1
VCC
AGND
VCC
W1
AGND
06057-017
Figure 17. Evaluation Board Schematic
Rev. 0 | Page 10 of 12
Page 11
ADL5322
R
OUTLINE DIMENSIONS
0.50
0.40
0.30
4
PIN 1
INDICATO
1
1.89
1.50
1.74
REF
1.59
PIN 1
INDICATOR
3.00
BSC SQ
TOP
VIEW
2.75
BSC SQ
0.50
BSC
0.60 MAX
8
5
1.60
1.45
1.30
0.90 MAX
0.85 NOM
SEATING
PLANE
12° MAX
0.30
0.23
0.18
0.70 MAX
0.65 TYP
0.05 MAX
0.01 NOM
0.20 REF
Figure 18. 8-Lead Lead Frame Chip Scale Package [LFCSP_VD]
3 mm × 3 mm Body, Very Thin, Dual Lead
(CP-8-2)
Dimensions shown in millimeters
ORDERING GUIDE
Model Temperature Range Package Description Package Option Branding Ordering Quantity
ADL5322ACPZ-R71−40°C to +85°C 8-Lead LFCSP_VD, 7" Tape and Reel CP-8-2 OP 1500
ADL5322ACPZ-WP1−40°C to +85°C 8-Lead LFCSP_VD, Waffle Pack CP-8-2 OP 50
ADL5322-EVAL Evaluation Board 1