Datasheet ADL5322 Datasheet (ANALOG DEVICES)

Page 1
700 MHz to 1000 MHz GaAs

FEATURES

Internally matched to 50 Ω input and output Internally biased Operating frequency: 700 MHz to 1000 MHz Gain: 20 dB OIP3: 45 dBm P1 dB: 27 dBm Noise figure: 5 dB 3 mm × 3 mm LFCSP Power supply: 5 V

APPLICATIONS

CDMA2000, WCDMA, and GSM base station transceivers and
high power amplifiers

GENERAL DESCRIPTION

The ADL5322 is a high linearity GaAs driver amplifier that is internally matched to 50 Ω for operation in the 700 MHz to 1000 MHz frequency range. The amplifier, which has a gain of 20 dB, is specially designed for use in the output stage of a cellular base station radio or as an input preamplifier in a multicarrier base station power amplifier. Matching and biasing are all on-chip. The ADL5322 is available in a Pb-free, 3mm × 3 mm, 8-lead LFCSP package with an operating temperature from −40°C to +85°C.
Matched RF PA Predriver
ADL5322

FUNCTIONAL BLOCK DIAGRAM

VCC 5
GND 6
GND 7
RFIN 8
BIAS CONTROL
INPUT
MATCH
ADL5322
OUTPUT
MATCH
Figure 1.
4 RFOUT
3 GND
2 VCC
1 VCC
06057-001
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 www.analog.com Fax: 781.461.3113 ©2006 Analog Devices, Inc. All rights reserved.
Page 2
ADL5322

TABLE OF CONTENTS

Features .............................................................................................. 1
Pin Configuration and Function Descriptions..............................5
Applications....................................................................................... 1
Functional Block Diagram .............................................................. 1
General Description......................................................................... 1
Revision History ............................................................................... 2
Specifications..................................................................................... 3
Absolute Maximum Ratings............................................................ 4
ESD Caution.................................................................................. 4

REVISION HISTORY

7/06—Revision 0: Initial Version
Typical Perf or m an c e Charac t e r istics ..............................................6
Basic Connections.............................................................................8
CDMA2000 Driving Application................................................8
Evaluation Board ............................................................................ 10
Outline Dimensions ....................................................................... 11
Ordering Guide .......................................................................... 11
Rev. 0 | Page 2 of 12
Page 3
ADL5322

SPECIFICATIONS

VCC = 5 V, TA = 25°C.
Table 1.
Parameter Conditions Min Typ Max Unit
FREQUENCY RANGE 700 1000 MHz GAIN Frequency = 850 MHz 19 20.3 21.4 dB
vs. Frequency 832 MHz to 870 MHz ±0.125 dB vs. Temperature −40°C to +85°C ±1 dB vs. Voltage 5 V, @ 5% (4.75 V to 5.25 V) ±0.1 dB
Frequency = 900 MHz 18.6 19.9 21.1 dB
vs. Frequency 869 MHz to 894 MHz ±0.125 dB vs. Temperature −40°C to +85°C ±1 dB vs. Voltage 5 V, @ 5% (4.75 V to 5.25 V) ±0.1 dB
Frequency = 950 MHz 18.3 19.6 20.8 dB
vs. Frequency 925 MHz to 960 MHz ±0.125 dB vs. Temperature −40°C to +85°C ±1.1 dB vs. Voltage 5 V, @ 5% (4.75 V to 5.25 V) ±0.1 dB
P1 dB Frequency = 850 MHz 27.0 27.7 dBm
vs. Frequency 832 MHz to 870 MHz ±0.1 dBm vs. Temperature −40°C to +85°C ±1 dBm vs. Voltage 5 V, @ 5% (4.75 V to 5.25 V) ±0.3 dBm
Frequency = 900 MHz 27.3 27.9 dBm
vs. Frequency 869 MHz to 894 MHz ±0.1 dBm vs. Temperature −40°C to +85°C ±1 dBm vs. Voltage 5 V, @ 5% (4.75 V to 5.25 V) ±0.4 dBm
Frequency = 950 MHz 26.7 27.5 dBm
vs. Frequency 925 MHz to 960 MHz ±0.2 dBm vs. Temperature −40°C to +85°C ±1 dBm
vs. Voltage 5 V, @ 5% (4.75 V to 5.25 V) ±0.4 dBm NOISE FIGURE Frequency = 830 MHz to 960 MHz 5 dB
INPUT RETURN LOSS Frequency = 830 MHz to 960 MHz −10 dB OUTPUT RETURN LOSS Frequency = 830 MHz to 960 MHz −10 dB OIP3 Carrier spacing = 1 MHz, P Frequency = 850 MHz 44.8 dBm
vs. Frequency 832 MHz to 870 MHz ±0.25 dBm
vs. Temperature −40°C to +85°C ±3.0 dBm
vs. Voltage 5 V, @ 5% (4.75 V to 5.25 V) ±0.5 dBm Frequency = 900 MHz 45.3 dBm
vs. Frequency 869 MHz to 894 MHz ±0.25 dBm
vs. Temperature −40°C to +85°C ±2.7 dBm
vs. Voltage 5 V, @ 5% (4.75 V to 5.25 V) ±0.8 dBm Frequency = 950 MHz 44.4 dBm
vs. Frequency 925 MHz to 960 MHz ±0.25 dBm
vs. Temperature −40°C to +85°C ±2.2 dBm
vs. Voltage 5 V, @ 5% (4.75 V to 5.25 V) ±0.8 dBm POWER SUPPLY
Supply Voltage 4.75 5 5.25 V
Supply Current P
Operating Temperature −40 +85 °C
= 5 dBm 320 mA
OUT
= 5 dBm per carrier
OUT
Rev. 0 | Page 3 of 12
Page 4
ADL5322

ABSOLUTE MAXIMUM RATINGS

Table 2.
Parameter Rating
Supply Voltage, VPOS 6 V Input Power (re: 50 Ω) 18 dBm Equivalent Voltage 1.8 V rms θ
(Soldered) 28.5°C/W
JC
Maximum Junction Temperature 150°C Operating Temperature Range −40°C to +85°C Storage Temperature Range −65°C to +150°C Soldering Temperature 260°C

ESD CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Rev. 0 | Page 4 of 12
Page 5
ADL5322

PIN CONFIGURATION AND FUNCTION DESCRIPTIONS

PIN 1
VCC 1 VCC 2 GND 3
RFOUT 4
Figure 2. Pin Configuration
Table 3. Pin Function Descriptions
Pin No. Mnemonic Description
1, 2, 5 VCC
Positive 5 V Supply Voltage. Bypass these three pins with independent power supply decoupling
networks (100 pF, 10 nF, and 10 μF). 3, 6, 7 GND Device Ground. 4 RFOUT RF Output. Internally matched to 50 Ω. 8 RFIN RF Input. Internally matched to 50 Ω. N/A EP Exposed Paddle. Connect to ground plane via a low impedance path.
Table 4. S-Parameters
Frequency ADL5322 (1, 1) ADL5322 (1, 2) ADL5322 (2, 1) ADL5322 (2, 2)
700.0 MHz 0.210/109.457 0.002/97.018 +11.221/−158.622 0.436/150.470
720.0 MHz 0.195/104.437 0.002/93.284 +11.108/−166.579 0.392/145.211
740.0 MHz 0.179/99.101 0.002/87.856 +11.013/−174.596 0.345/137.443
760.0 MHz 0.165/93.363 0.002/86.137 10.931/177.282 0.295/133.051
780.0 MHz 0.151/86.953 0.002/78.668 10.856/169.006 0.242/125.612
800.0 MHz 0.138/79.928 0.002/74.072 10.781/160.613 0.187/116.434
820.0 MHz 0.125/71.950 0.002/68.940 10.698/152.065 0.130/102.897
840.0 MHz 0.114/62.829 0.002/62.269 10.605/143.342 0.079/76.154
860.0 MHz 0.103/52.162 0.002/56.742 10.493/134.489 0.061/18.090
880.0 MHz 0.095/39.531 0.002/56.696 10.361/125.433 +0.098/−26.962
900.0 MHz 0.090/24.952 0.003/43.549 10.210/116.239 +0.153/−46.741
920.0 MHz 0.088/9.188 0.003/37.254 10.033/106.889 +0.211/−58.300
940.0 MHz +0.090/−7.350 0.003/29.904 9.837/97.326 +0.269/−66.606
960.0 MHz +0.095/−23.642 0.003/24.334 9.614/87.600 +0.324/−73.265
980.0 MHz +0.104/−39.131 0.003/16.521 9.364/77.609 +0.376/−78.914
1.000 GHz +0.115/−53.477 0.003/8.139 9.081/67.342 +0.424/−83.911
INDICATOR
ADL5322
TOP VIEW
(Not to S cale)
8 RFIN 7 GND 6 GND 5 VCC
06057-002
Rev. 0 | Page 5 of 12
Page 6
ADL5322

TYPICAL PERFORMANCE CHARACTERISTICS

22.0
21.5
21.0
20.5
20.0
19.5
GAIN (dB)
19.0
18.5
18.0
17.5 800 1000
Figure 3. Gain vs. Frequency, V
TEMP = –40°C
TEMP = +25°C
TEMP = +85°C
850 900 950
FREQUENCY (MHz)
= 5 V, TA = −40°C, +25°C, and +85°C
CC
29.0
TEMP = –40°C
28.5
28.0
TEMP = +25°C
27.5
P1dB (dBm)
27.0
TEMP = +85°C
26.5
26.0 800 1000
Figure 4. P1 dB vs. Frequency, V
850 900 950
FREQUENCY (MHz)
= 5 V, TA = −40°C, +25°C, and +85°C
CC
47
TEMP = –40°C
46
45
TEMP = +25°C
44
OIP3 (dBm)
43
42
TEMP = +85°C
41
800 1000
Figure 5. OIP3 vs. Frequency, V
850 900 950
FREQUENCY (MHz)
= 5 V, TA = −40°C, +25°C, and +85°C
CC
06057-003
06057-004
06057-005
5.6
5.4
5.2
5.0
4.8
NF (dB)
4.6
4.4
4.2
4.0 700 1000
800 900
FREQUENCY (MHz)
Figure 6. Noise Figure vs. Frequency, Multiple Devices, V
28.4
28.2 VCC = 5.25V
28.0
= 5V
V
CC
27.8
VCC = 4.75V
27.6
27.4
27.2
P1dB (dBm)
27.0
26.8
26.6
26.4
800 1000
Figure 7. P1 dB vs. Frequency, V
850 900 950
FREQUENCY (MHz)
= 4.75 V, 5 V, and 5.25 V, TA = 25°C
CC
46.5
46.0
45.5
45.0
44.5
OIP3 (dBm)
44.0
43.5
43.0
800 1000
Figure 8. OIP3 vs. Frequency, V
V
= 5.25V
CC
= 5V
V
CC
= 4.75V
V
CC
850 900 950
FREQUENCY (MHz)
= 4. 75 V, 5 V, and 5.25 V, TA = 25°C
CC
= 5 V, TA = 25°C
S
06057-006
06057-007
06057-008
Rev. 0 | Page 6 of 12
Page 7
ADL5322
6
5
4
3
FREQUENCY
2
1
0
44.1
44.3 44.5 44.7 44.9 45.1 45.3 45.5 45.7 OIP3 (dBm)
Figure 9. Distribution of OIP3 at 850 MHz
6
–8
–10
–12
–14
–16
–18
ADL5322 [1, 1] (dB)
ADL5322 [2, 2] (dB)
–20
–22
–24
–26
0.70 1.00
S22
S11
0.85 0.900.75 0.80 0.95
FREQUENCY (G Hz )
Figure 10. Input S11 and Output S22 Return Loss vs. Frequency
7
6
5
4
3
FREQUENCY
2
1
0
43.6
43.8 44.0 44.2 44.4 44.6 44.8 45.0 45.2
06057-009
OIP3 (dBm)
06057-011
Figure 11. Distribution of OIP3 at 950 MHz
06057-010
Rev. 0 | Page 7 of 12
Page 8
ADL5322

BASIC CONNECTIONS

Figure 14 shows the basic connections for operating the ADL5322. Each of the three power supply lines should be decoupled with 10 μF, 10 nF, and 100 pF capacitors. Pin 3, Pin 6, Pin 7, and the exposed paddle under the device should all be connected to a low impedance ground plane. If multiple ground planes are being used, these should be stitched together with vias under the device to optimize thermal conduction. See recommended land pattern in
Figure 12.
06057-013
Figure 12. Recommended Land Pattern

CDMA2000 DRIVING APPLICATION

Figure 13 shows a plot of the spectrum of an ADL5323 driving at 4-carrier CDMA2000 signal at 0 dBm per carrier (total carrier power = 6 dBm), centered at 880 MHz. At 750 kHz and 1.98 MHz offset, adjacent channel power ratios of −59 dBc and −84 dBc (measured in 30 kHz with respect to the 1.22 MHz carrier) are observed. At 4 MHz carrier offset, −73 dBc is measured in a 1 MHz bandwidth (−133 dBm/Hz). Note that the spectrum of the four carriers is slightly rounded due the frequency response of the cavity-tuned filter that was used to filter out the noise and distortion of the source signal.
10
–20
–30
–40
–50
–60
(dBm)
–70
–80
–90
–100
–110
CENTER 881.875M Hz SPAN 10MHz
1MHz/
Figure 13. Spectrum of 4 Adjacent CDMA2000 Carriers Centered at 880 MHz;
Total Carrier Power = 6 dBm (0 dBm per Carrier)
RBW = 30kHz VBW = 300kHz SWT = 2s RF ATT = 20dB MIXER = –10dBm
CH PWR = 0.26d Bm ACP UP = –59.33dB ALT1 UP = –84.35dB ALT2 UP = –72.74dB
06057-014
C5
100pF
RFOUT
VCC
RFIN
C1 10µFC310nF
C4
100pF
C2 100pF
AGNDAGNDAGND
AGND
ADL5322
5
VCC
6
GND
7
GND
8
RFIN VCC
EP
RFOUT
GND
VCC
4 3 2 1
AGND
C6 100pFC710nF
C9 100pF
C10 10nF
C8 10µF
AGNDAGNDAGND
C11 10µF
AGNDAGNDAGND
VCC
VCC
6057-012
Figure 14. Basic Connections
Rev. 0 | Page 8 of 12
Page 9
ADL5322
Figure 15 shows how ACP varies with output power level. The close-in ACP is a function of the signal coding and is unaffected by output headroom at these power levels. The ACP measured at 1.98 MHz carrier offset is −72 dBc at 10 dBm output power (12 dB below the required 60 dBc). At 4 MHz carrier offset, the noise and distortion measured in a 1 MHz bandwidth is −75 dBm at 6 dBm (total) output power (0 dBm per carrier). In a 50 dBm transmitter, this corresponds to an antenna-referred output power of −31 dBm (1 MHz), which is 18 dB below what is required by the CDMA2000 standard.
ACP1 AND ACP2 – 30kHz RBW (d Bc)
–100
30
–40
–50
ACP1 (dBc) – 750kHz OFFSET – 30kHz RBW
–60
ACP3 (dBm) – 4MHz OFFSET – 1MHz RBW
–70
–80
ACP2 (dBc) – 1. 98 M Hz OFFSE T – 30kHz RBW
–90
–10
–8 –6 –4 –2 0 2 4 6 8
OUTPUT POWER (dBm)
30
–40
–50
–60
–70
–80
ACP3 – 1MHz RBW (dBm)
–90
–100
10
Figure 15. CDMA2000 ACP vs. Output Power per Carrier; 4 Adjacent Carriers
06057-015
Rev. 0 | Page 9 of 12
Page 10
ADL5322

EVALUATION BOARD

Figure 17 shows the schematic of the ADL5322 evaluation board. The board is powered by a single supply in the 4.75 V to
5.25 V range. The power supply is decoupled on each of the three power supply pins by 10 μF, 10 nF, and 100 pF capacitors. See
Tabl e 5 for exact evaluation board component values. Note that all three VCC pins (Pin 1, Pin 2, and Pin 5) should be independently bypassed as shown in operation.
Table 5. Evaluation Board Components
Component Function Default Value
DUT1 Driver amplifier ADL5322 C1, C12, C16 Low frequency bypass capacitors 10 μF, 0603 C3, C11, C17 Low frequency bypass capacitors 10 nF, 0402 C2, C10, C18 High frequency bypass capacitors 100 pF, 0402 C8, C9, C13, C14, R3 Open Open, 0402 R2, R4 AC coupling capacitors 100 pF, 0402
VCC
RFIN
C1 10µFC310nF
Figure 17 for proper
C2 100pF
AGNDAGNDAGND
R2
100pF
C8 OPENC9OPEN
AGND
AGNDAGND
ADL5322/
ADL5323
5
VCC
6
GND
7
GND
8
RFIN VCC
DUT1
GND
RFOUT
GND
VCC
06057-016
Figure 16. Evaluation Board Component Side View
R4
100pF
C13 OPEN
R3 OPEN
AGND
C10 100pF
C18 100pF
4 3 2 1
VCCVCC
C11 10nF
C17 10nF
C14 OPEN
AGNDAGND
C12 10µF
AGNDAGNDAGND
C16 10µF
AGNDAGNDAGND
SNS1
RFOUT
TP2
VCC
TP1
VCC
AGND
VCC
W1
AGND
06057-017
Figure 17. Evaluation Board Schematic
Rev. 0 | Page 10 of 12
Page 11
ADL5322
R

OUTLINE DIMENSIONS

0.50
0.40
0.30
4
PIN 1 INDICATO
1
1.89
1.50
1.74
REF
1.59
PIN 1
INDICATOR
3.00
BSC SQ
TOP
VIEW
2.75
BSC SQ
0.50 BSC
0.60 MAX
8
5
1.60
1.45
1.30
0.90 MAX
0.85 NOM
SEATING
PLANE
12° MAX
0.30
0.23
0.18
0.70 MAX
0.65 TYP
0.05 MAX
0.01 NOM
0.20 REF
Figure 18. 8-Lead Lead Frame Chip Scale Package [LFCSP_VD]
3 mm × 3 mm Body, Very Thin, Dual Lead
(CP-8-2)
Dimensions shown in millimeters

ORDERING GUIDE

Model Temperature Range Package Description Package Option Branding Ordering Quantity
ADL5322ACPZ-R71−40°C to +85°C 8-Lead LFCSP_VD, 7" Tape and Reel CP-8-2 OP 1500 ADL5322ACPZ-WP1−40°C to +85°C 8-Lead LFCSP_VD, Waffle Pack CP-8-2 OP 50 ADL5322-EVAL Evaluation Board 1
1
Z = Pb-free part.
Rev. 0 | Page 11 of 12
Page 12
ADL5322
NOTES
©2006 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D06057-0-7/06(0)
Rev. 0 | Page 12 of 12
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