FEATURES
Wideband Switch: –3 dB @ 4.5 GHz
Absorptive/Reflective Switches
High Off Isolation (40 dB @ 1 GHz)
Low Insertion Loss (0.8 dB @1 GHz)
Single 1.65 V to 2.75 V Power Supply
CMOS/LVTTL Control Logic
8-Lead MSOP and Tiny 3 mm 3 mm LFCSP Packages
Low Power Consumption (<1 A)
APPLICATIONS
Wireless Communications
General-Purpose RF Switching
Dual-Band Applications
High Speed Filter Selection
Digital Transceiver Front End Switch
IF Switching
Tuner Modules
Antenna Diversity Switching
GENERAL DESCRIPTION
The ADG901/ADG902 are wideband switches that use a
CMOS process to provide high isolation and low insertion loss to
1 GHz. The ADG901 is an absorptive (matched) switch with
50 Ω terminated shunt legs, while the ADG902 is a reflective
switch. These devices are designed such that the isolation is
high over the dc to 1 GHz frequency range. They have on-board
CMOS control logic, thus eliminating the need for external
controlling circuitry. The control inputs are both CMOS and
FUNCTIONAL BLOCK DIAGRAMS
LVTTL compatible. The low power consumption of these
CMOS devices makes them ideally suited to wireless applications and general-purpose high frequency switching.
PRODUCT HIGHLIGHTS
1. –40 dB Off Isolation @ 1 GHz
2. 0.8 dB Insertion Loss @ 1 GHz
3. Tiny 8-Lead MSOP/LFCSP Packages
0
TA = 25C
–10
20
–
–30
–40
–50
VDD = 2.5 V
FREQUENCY (Hz)
V
DD
= 1.8 V
–60
ISOLATION (dB)
–70
–80
–90
–100
10k100k1M10M100M1G10G
Figure 1. Off Isolation vs. Frequency
REV. A
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
(VDD = 1.65 V to 2.75 V, GND = 0 V, input power = 0 dBm,
1
ADG901/ADG902–SPECIFICATIONS
all specifications T
MIN
to T
, unless otherwise noted.)
MAX
B Version
ParameterSymbolConditionsMinTyp2MaxUnit
AC ELECTRICAL CHARACTERISTICS
Operating Frequency
–3 dB Frequency
Input Power
4
3
4
DC2.5GHz
4.5GHz
0 V dc Bias7dBm
+0.5 V dc Bias16dBm
Insertion LossS
, S
21
Isolation—RF1 to RF2S21, S
DC to 100 MHz; VDD = 2.5 V ± 10%0.40.7dB
12
500 MHz; V
1000 MHz; V
100 MHz6061dB
12
= 2.5 V ± 10%0.50.8dB
DD
= 2.5 V ± 10%0.81.25dB
DD
(CP Package)500 MHz4345dB
1000 MHz3440dB
Isolation—RF1 to RF2S
, S
21
100 MHz5160dB
12
(RM Package)500 MHz37.547dB
1000 MHz3137dB
DC to 100 MHz2028dB
22
Return Loss (On Channel)
4
S11, S
500 MHz2329dB
Return Loss (Off Channel)
4
S11, S
1000 MHz2528dB
DC to 100 MHz1823dB
22
500 MHz1721dB
On Switching Time
Off Switching Time
Rise Time
Fall Time
4
4
1 dB Compression
Third Order Intermodulation Intercept IP
Video Feedthrough
4
4
4
5
t
t
t
t
P
ON
OFF
RISE
FALL
–1 dB
3
1000 MHz1519dB
50% CTRL to 90% RF3.66ns
50% CTRL to 10% RF5.89.5ns
10% to 90% RF3.15.5ns
90% to 10% RF6.08.5ns
1000 MHz17dBm
900 MHz/901 MHz, 4 dBm3036dBm
2.5mV p-p
DC ELECTRICAL CHARACTERISTICS
Input High VoltageV
Input Low VoltageV
Input Leakage CurrentI
CAPACITANCE
4
INH
V
INH
INL
V
INL
I
VDD = 2.25 V to 2.75 V1.7V
VDD = 1.65 V to 1.95 V0.65 V
CC
V
VDD = 2.25 V to 2.75 V0.7V
VDD = 1.65 V to 1.95 V0.35 VCCV
0 ≤ VIN ≤ 2.75 V± 0.1±1µA
RF1/RF2, RF Port On CapacitanceCRF ONf = 1 MHz1.2pF
CTRL Input CapacitanceC
CTRL
f = 1 MHz2.1pF
POWER REQUIREMENTS
V
DD
Quiescent Power Supply CurrentI
NOTES
1
Temperature range B Version: –40°C to +85°C.
2
Typical values are at VDD = 2.5 V and 25°C, unless otherwise stated.
3
Point at which insertion loss degrades by 1 dB.
4
Guaranteed by design, not subject to production test.
5
The dc transience at the output of any port of the switch when the control voltage is switched from high to low or low to high in a 50 Ω test setup, measured with
1 ns rise time pulses and 500 MHz bandwidth.
Specifications subject to change without notice.
DD
Digital inputs = 0 V or V
DD
1.652.75V
0.11µA
REV. A–2–
Page 3
ADG901/ADG902
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C, unless otherwise noted.)
VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . –0.5 V to +4 V
Inputs to GND . . . . . . . . . . . . . . . . . . –0.5 V to V
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of
the device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. Only one absolute
maximum rating may be applied at any one time.
2
RF1/2 Off Port Inputs to Ground ................................... –0.5 V to VDD – 0.5 V
ADG901BRM–40°C to +85°CMini Small Outline Package (MSOP)RM-8W6B
ADG901BRM-500RL7 –40°C to +85°CMini Small Outline Package (MSOP)RM-8W6B
ADG901BRM-REEL7–40°C to +85°CMini Small Outline Package (MSOP)RM-8W6B
ADG901BCP-500RL7–40°C to +85°CLead Frame Chip Scale Package (LFCSP)CP-8W6B
ADG901BCP-REEL7–40°C to +85°CLead Frame Chip Scale Package (LFCSP)CP-8W6B
ADG902BRM–40°C to +85°CMini Small Outline Package (MSOP)RM-8W7B
ADG902BRM-500RL7 –40°C to +85°CMini Small Outline Package (MSOP)RM-8W7B
ADG902BRM-REEL7–40°C to +85°CLead Frame Chip Scale Package (LFCSP)RM-8W7B
ADG902BCP-500RL7–40°C to +85°CLead Frame Chip Scale Package (LFCSP)CP-8W7B
ADG902BCP-REEL7–40°C to +85°CLead Frame Chip Scale Package (LFCSP)CP-8W7B
EVAL-ADG901EBEvaluation Board
EVAL-ADG902EBEvaluation Board
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although the
ADG901/ADG902 features proprietary ESD protection circuitry, permanent damage may occur on
devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are
recommended to avoid performance degradation or loss of functionality.
PIN CONFIGURATION
8-Lead MSOP (RM-8)
8-Lead 3 mm 3 mm LFCSP (CP-8)
V
CTRL
GND
RF1
DD
1
ADG901/
2
ADG902
3
TOP VIEW
(Not to Scale)
4
8
RF2
7
GND
6
GND
5
GND
Pin No.MnemonicFunction
1V
2CTRLCMOS or TTL Logic Level.
PIN FUNCTION DESCRIPTIONS
DD
Power Supply Input. These parts can
be operated from 1.65 V to 2.75 V;
should be decoupled to GND.
V
DD
0
➞
RF1 Isolated from RF2
➞
RF1 to RF2
1
3, 5, 6, 7GNDGround Reference Point for All
Circuitry on the Part.
Table I. Truth Table
4RF1RF1 Port.
8RF2RF2 Port.
CTRLSignal Path
0RF1 isolated from RF2
1RF1 to RF2
REV. A
–3–
Page 4
ADG901/ADG902
TERMINOLOGY
ParameterDescription
V
DD
I
DD
GNDGround (0 V) reference.
CTRLLogic control input.
V
INL
V
INH
I
INL (IINH
C
t
ON
t
OFF
t
RISE
t
FALL
)Input current of the digital input.
IN
Off IsolationThe attenuation between input and output ports of the switch when the switch control voltage is in the
Insertion LossThe attenuation between input and output ports of the switch when the switch control voltage is in the
P
–1 dB
IP
3
Return LossThe amount of reflected power relative to the incident power at a port. Large return loss indicates good matching.
Video Feedthrough Spurious signals present at the RF ports of the switch when the control voltage is switched from high to low
Most positive power supply potential.
Positive supply current.
Maximum input voltage for Logic 0.
Minimum input voltage for Logic 1.
Digital input capacitance.
Delay between applying the digital control input and the output switching on.
Delay between applying the digital control input and the output switching off.
Rise time. Time for the RF signal to rise from 10% to 90% of the ON level.
Fall time. Time for the RF signal to fall from 90% to 10% of the ON level.
OFF condition.
ON condition.
1 dB compression point. The RF input power level at which the switch insertion loss increases by 1 dB over its
low level value. It is a measure of how much power the ON switch can handle before the insertion loss increases
by 1 dB.
Third order intermodulation intercept. This is a measure of the power in false tones that occur when closely spaced
tones are passed through a switch, whereby the nonlinearity of the switch causes these false tones to be generated.
By measuring Return Loss the VSWR can be calculated from conversion charts. VSWR (voltage standing wave ratio)
indicates degree of matching present at a switch RF port.
or low to high without an RF signal present.
REV. A–4–
Page 5
Typical Performance Characteristics–ADG901/ADG902
–0.4
–0.6
0.8
–
VDD = 2.5V
–1.0
–1.2
–1.4
–1.6
–1.8
–2.0
INSERTION LOSS (dB)
–2.2
–2.4
–2.6
TA = 25C
–2.8
–3.0
10k 100k1M10M 100M 1G10G
VDD = 2.25V
VDD = 2.75V
FREQUENCY (Hz)
TPC 1. Insertion Loss vs. Frequency
over Supplies (S12 and S21)
–0.4
–0.6
+25C
0.8
–
–1.0
–1.2
–1.4
–1.6
–1.8
–2.0
–2.2
INSERTION LOSS (dB)
–2.4
–2.6
VDD = 2.5V
–2.8
–3.0
10k 100k1M10M 100M 1G10G
+85C
FREQUENCY (Hz)
–40C
TPC 4. Insertion Loss vs. Frequency
over Temperature (S12 and S21)
–0.40
–0.45
0.50
–
–0.55
VDD = 2.5V
–0.60
–0.65
–0.70
–0.75
–0.80
INSERTION LOSS (dB)
–0.85
–0.90
TA = 25C
–0.95
–1.00
10k 100k1M10M 100M 1G10G
VDD = 2.25V
VDD = 2.75V
FREQUENCY (Hz)
TPC 2. Insertion Loss vs. Frequency
over Supplies (S12 and S21)
(Zoomed TPC 1 Plot)
0
–5
TA = 25C
–10
–15
20
–
–25
–30
–35
–40
–45
–50
–55
–60
–65
–70
ISOLATION (dB)
–75
–80
–85
–90
–95
–100
10k 100k1M10M 100M 1G10G
VDD = 2.5V
FREQUENCY (Hz)
V
DD
= 1.8V
TPC 5. OFF Isolation vs. Frequency
over Supplies (S12 and S21)
–0.4
–0.6
0.8
–
VDD = 1.8V
–1.0
–1.2
–1.4
–1.6
–1.8
–2.0
–2.2
–2.4
INSERTION LOSS (dB)
–2.6
TA = 25C
–2.8
–3.0
10k 100k1M10M 100M 1G10G
VDD = 1.95V
VDD = 1.65V
FREQUENCY (Hz)
TPC 3. Insertion Loss vs. Frequency
over Supplies (S12 and S21)
0
VDD = 2.5V
–5
–10
–15
20
–
–25
–30
–35
–40
–45
–50
–55
–60
ISOLATION (dB)
–65
–70
–75
–80
–85
–90
10k 100k1M10M 100M 1G10G
+85C
+25C
–40C
FREQUENCY (Hz)
TPC 6. OFF Isolation vs. Frequency
over Temperature (S12 and S21)
0
TA = 25C
2.5V
V
–5
DD =
10
–
–15
–20
–25
RETURN LOSS (dB)
–30
–35
10k 100k1M10M 100M 1G
OFF SWITCH
ON SWITCH
FREQUENCY (Hz)
TPC 7. Return Loss vs. Frequency
(S11)
REV. A
10G
CH1
CH2
CH1 = CTRL = 1V/DIV t
CH2 = RFx = 100mV/DIV t
TPC 8. Switch Timing
–5–
RISE
FALL
= 2.8ns
= 5.1ns
CTRL
RFx
CH2 pk-pk
2.016mV
CH1 500mV CH2 1mV 10.0ns
TPC 9. Video Feedthrough
Page 6
ADG901/ADG902
40
35
30
25
20
(dBm)
3
IP
15
10
5
0
250 350450 550
FREQUENCY (MHz)
650 750850
TPC 10. IP3 vs. Frequency
VDD = 2.5V
= 25C
T
A
20
18
16
14
12
(dBm)
10
–1dB
8
P
6
4
2
0
0250500750 1000 1250
TPC 11. P
FREQUENCY (MHz)
vs. Frequency
–1dB
VDD = 2.5V
= 25C
T
A
1500
REV. A–6–
Page 7
ADG901/ADG902
Test Circuits*
V
DD
0.1F
V
DD
RF1
V
S
CTRL
GND
Test Circuit 1. Switching Timing: tON, t
V
DD
0.1F
V
DD
RF1
V
S
CTRL
GND
RF2
RF2
R
50
V
R
50
V
DD
0.1F
V
OUT
R
50
L
50
50
NETWORK
ANALYZER
RF2
V
S
NC
V
ADG901
V
OUT
V
CTRL
L
V
OUT
50%50%
90%
t
ON
t
10%
OFF
OFF
OUT
V
CTRL
L
V
OUT
10%
t
RISE
50%
90%
90%
t
FALL
50%
10%
RF1
CTRL
V
CTRL
OSCILLOSCOPE
50
DD
RF2
50
GND
INSERTION LOSS
= 20
LOG
V
OUT
V
Test Circuit 4. Insertion Loss
V
DD
0.1F
V
DD
GND
V
ADG901
RF1
50
CTRL
CTRL
S
V
RF1
CTRL
CTRL
Test Circuit 2. Switch Timing: t
V
DD
0.1F
V
50
DD
50
GND
OFF ISOLATION =20 LOG
RF2
ADG901
Test Circuit 3. Off Isolation
, t
RISE
FALL
V
OUT
R
L
50
50
V
S
NETWORK
ANALYZER
V
OUT
V
S
Test Circuit 5. Video Feedthrough
*Similiar setups for ADG902.
REV. A
–7–
Page 8
ADG901/ADG902
SPECTRUM
ANALYZER
CTRL
V
CTRL
RF1
V
DD
0.1F
V
ADG901
50
DD
GND
Test Circuit 6. IP
50
RF2
3
COMBINER
RF
SOURCE
RF
SOURCE
SPECTRUM
ANALYZER
CTRL
V
CTRL
0.1F
ADG901
RF1
50
Test Circuit 7. P
GND
V
DD
V
DD
RF
SOURCE
RF2
50
–1dB
V
S
REV. A–8–
Page 9
ADG901/ADG902
APPLICATIONS
The ADG901/ADG902 are ideal solutions for low power, high
frequency applications. The low insertion loss, high isolation
between ports, low distortion, and low current consumption of
these parts make them excellent solutions for many high frequency
switching applications.
Applications include switching between high frequency filters,
ASK generator, and FSK generator.
Absorptive vs. Reflective Switches
The ADG901 is an absorptive (matched) switch with 50 Ω termi-
nated shunt legs, and the ADG902 is a reflective switch with 0 Ω
terminated shunts to ground. The ADG901 absorptive switch
has a good VSWR on each port, regardless of the switch mode.
An absorptive switch should be used when there is a need for a
good VSWR that is looking into the port but not passing the
through signal to the common port. The ADG901 is therefore
ideal for applications that require minimum reflections back to
the RF source. It also ensures that the maximum power is transferred to the load.
The ADG902 reflective switch is suitable for applications where
high off port VSWR does not matter and the switch has some
other desired performance feature. It can be used in many applications, including high speed filter selection. In most cases, an
absorptive switch can be used instead of a reflective switch, but
not vice versa.
ADG9xx EVALUATION BOARD
The ADG9xx evaluation board allows designers to evaluate the
high performance wideband switches with a minimum of effort.
To prove that these devices meet user requirements, the user
requires only a power supply and a network analyzer along with
the evaluation board. An application note is available with the
evaluation board and provides complete information on operating
the evaluation board.
The RF1 port (see Figure 3) is connected through a 50 Ω trans-
mission line to the top left SMA connector J1. RF2 is connected
through a 50 Ω transmission line to the top SMA connector J2.
J3 is connected to GND. A through transmission line connects
J4 and J5 and this transmission line is used to estimate the loss
of the PCB over the environmental conditions being evaluated.
The board is constructed of a 4-layer, FR4 material with a dielectric constant of 4.3 and an overall thickness of 0.062 inches. Two
ground layers with grounded planes provide ground for the RF
transmission lines. The transmission lines were designed using a
coplanar waveguide with ground plane model using a trace width
of 0.052 inches, clearance to ground plane of 0.030 inches,
dielectric thickness of 0.029 inches, and a metal thickness of