Page 1
3 V/5 V CMOS
FEATURES
Ultralow on-resistance:
0.5 Ω typical
0.8 Ω maximum at 5 V supply
Excellent audio performance, ultralow distortion:
0.13 Ω typical
0.24 Ω maximum R
High current carrying capability:
400 mA continuous current
600 mA peak current at 5 V
Automotive temperature range: –40°C to +125°C
Rail-to-rail operation
Typical power consumption (<0.01 µW)
Pin-compatible upgrade for the ADG749 and ADG779
APPLICATIONS
Cellular phones
PDAs
Battery-powered systems
Audio and video signal routing
Modems
PCMCIA cards
Hard drives
Relay replacement
GENERAL DESCRIPTION
The ADG849 is a monolithic, CMOS SPDT (single pole, double
throw) switch that operates with a supply range of 1.8 V to 5.5 V.
It is designed to offer ultralow on-resistance values of typically
0.5 Ω. This design makes the ADG849 an ideal solution for
applications that require minimal distortion through the switch.
The ADG849 also has the capability of carrying large amounts
of current, typically 600 mA at 5 V operation.
flatness
ON
0.5 Ω SPDT/2:1 Mux in SC70
ADG849
FUNCTIONAL BLOCK DIAGRAM
ADG849
S2
S1
IN
SWITCHES SHOWN
FOR A LOGIC 1 INPUT
Figure 1.
PRODUCT HIGHLIGHTS
1. Very low on-resistance, 0.5 Ω typical.
2. Tiny, 6-lead SC70 package.
3. Low power dissipation. The CMOS construction ensures
low power dissipation.
4. High current carrying capability.
5. Low THD + noise (0.01% typ).
D
04737-0-001
Each switch of the ADG849 conducts equally well in both
directions when on. The device exhibits break-before-make
switching action, thus preventing momentary shorting when
switching channels.
The ADG849 is available in a tiny, 6-lead SC70 package, making
it the ideal candidate for space-constrained applications.
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable.
However, no responsibility is assumed by Analog Devices for its use, nor for any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication
or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
Fax: 781.326.8703 © 2004 Analog Devices, Inc. All rights reserved.
www.analog.com
Page 2
ADG849
TABLE OF CONTENTS
Specifications..................................................................................... 3
Typical Perfor m a n c e Character i stics ..............................................7
Absolute Maximum Ratings............................................................ 5
ESD Caution.................................................................................. 5
Pin Configuration and Function Descriptions............................. 6
REVISION HISTORY
7/04—Revision 0: Initial Version
Tes t Ci rc u it s ........................................................................................9
Outline Dimensions....................................................................... 11
Ordering Guide .......................................................................... 11
Rev. 0| Page 2 of 12
Page 3
ADG849
SPECIFICATIONS
Table 1. VDD = 4.5 V to 5.5 V, GND = 0 V
Parameter +25°C
ANALOG SWITCH
Analog Signal Range 0 V to V
On-Resistance (RON) 0.5 Ω typ
0.6 0.7 0.8 Ω max See Figure 15
On-Resistance Match Between Channels
(∆R
)
ON
0.095 0.11 0.125 Ω max
On-Resistance Flatness (R
) 0.13 Ω typ
FLAT(ON)
0.18 0.22 0.24 Ω max
LEAKAGE CURRENTS VDD = 5.5 V
Source Off Leakage, IS (Off) ±0.01 nA typ
Channel On Leakage, ID, IS (On) ±0.04 nA typ
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
INH
INL
Input Current
I
or I
INL
INH
±0.1 µA max
CIN, Digital Input Capacitance 2.5 pF typ
DYNAMIC CHARACTERISTICS
t
ON
2
15 17 18 ns max VS = 3 V, see Figure 18
t
OFF
13 14 15 ns max VS = 3 V, see Figure 18
Break-Before-Make Time Delay, t
BBM
1 ns min
Charge Injection 50 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF, see Figure 20
Off Isolation –64 dB typ
Channel-to-Channel Crosstalk –64 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz,
Bandwidth: –3 dB 38 MHz typ RL = 50 Ω, CL = 5 pF, see Figure 23
Insertion Loss 0.04 dB typ RL = 50 Ω, CL = 5 pF, see Figure 23
THD + N 0.01 %
CS (Off) 52 pF typ
CD, CS (On) 145 pF typ
POWER REQUIREMENTS VDD = 5.5 V, Digital Inputs = 0 V or 5.5 V
I
DD
1.0 µA max
1
The temperature range for the Y version is –40°C to +125°C.
2
Guaranteed by design, not subject to production test.
1
–40°C to
+85°C
Ω typ
0.05
–40°C to
+125°C
DD
Unit Test Conditions/Comments
V
V
= 0 V to VDD, IDS = –100 mA
S
V
= 0.85 V, IDS = –100 mA
S
V
= 0 V to VDD, IDS = –100 mA
S
= 4.5 V/1 V, VD = 1 V/4.5 V,
V
S
see Figure 16
= VD = 1 V, or VS = VD = 4.5 V,
V
S
see Figure 17
2.0 V min
0.8 V max
0.005 µA typ VIN = V
11 ns typ RL = 50 Ω, CL = 35 pF
9 ns typ RL = 50 Ω, CL = 35 pF
5 ns typ
= 50 Ω, CL = 35 pF, V
R
L
see Figure 19
= 50 Ω, CL = 5 pF, f = 100 kHz
R
L
see Figure 21
see Figure 22
= 32 Ω, f = 20 Hz to 20 kHz,
R
L
Vs = 2 V p-p
0.001 µA typ
INL
or V
INH
= V
= 3 V,
S1
S2
Rev. 0| Page 3 of 12
Page 4
ADG849
Table 2. VDD = 2.7 V to 3.6 V, GND = 0 V
Parameter +25°C
1
–40°C to
+85°C
–40°C to
+125°C
Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to V
DD
V
On-Resistance (RON) 0.72 Ω typ VS = 0 V to VDD, IDS = –100 mA
1.1 1.1 1.2 Ω max See Figure 15
On-Resistance Match Between Channels
)
(∆R
ON
0.05
Ω typ V
= 1.5 V, IDS = –100 mA
S
0.095 0.11 0.125 Ω max
On-Resistance Flatness (R
) 0.3 Ω typ VS = 0 V to VDD, IDS = –100 mA
FLAT(ON)
LEAKAGE CURRENTS VDD = 3.6 V
Source Off Leakage, IS (Off) ±0.1 nA typ VS = 3 V/1 V, VD = 1 V/3 V, see Figure 16
Channel On Leakage, ID, IS (On) ±0.01 nA typ
= VD = 1 V, or VS = VD = 3 V;
V
S
see Figure 17
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
INH
INL
2.0 V min
0.8 V max VDD = 3 V to 3.6 V
0.7 V max VDD = 2.7 V
Input Current
I
or I
INL
INH
0.005 µA typ VIN = V
INL
or V
INH
±0.1 µA max
CIN, Digital Input Capacitance 2.5 pF typ
DYNAMIC CHARACTERISTICS
t
ON
2
16 ns typ RL = 50 Ω, CL = 35 pF
22 24 26 ns max VS = 1.5 V, see Figure 18
t
OFF
13 ns typ RL = 50 Ω, CL = 35 pF
18 20 22 ns max VS = 1.5 V, see Figure 18
Break-Before-Make Time Delay, t
BBM
7 ns typ
= 50 Ω, CL = 35 pF, V
R
L
= V
= 1.5 V,
S1
S2
see Figure 19
1 ns min
Charge Injection 30 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF, see Figure 20
Off Isolation –64 dB typ
= 50 Ω, CL = 5 pF, f = 100 kHz,
R
L
see Figure 21
Channel-to-Channel Crosstalk –64 dB typ
= 50 Ω, CL = 5 pF, f = 100 kHz,
R
L
see Figure 22
Bandwidth: –3 dB 38 MHz typ RL = 50 Ω, CL = 5 pF, see Figure 23
Insertion Loss 0.04 dB typ RL = 50 Ω CL = 5 pF, see Figure 23
THD + N 0.02 %
= 32 Ω, f = 20 Hz to 20 kHz,
R
L
Vs = 1 V p-p
CS (Off) 55 pF typ f = 1 MHz
CD, CS (On) 147 pF typ f = 1 MHz
POWER REQUIREMENTS VDD = 3.6 V
Digital Inputs = 0 V or 3.6 V
I
DD
0.001 µA typ
1.0 µA max
1
The temperature range for the Y version is –40°C to +125°C.
2
Guaranteed by design, not subject to production test.
Rev. 0| Page 4 of 12
Page 5
ADG849
ABSOLUTE MAXIMUM RATINGS
Table 3. T
Parameter Rating
VDD to GND –0.3 V to +7 V
Analog Inputs
Digital Inputs1
Peak Current, S or D
Continuous Current, S or D 400 mA
Operating Temperature Range
Extended –40°C to +125°C
Storage Temperature Range –65°C to +150°C
Junction Temperature +150°C
SC70 Package
θJA Thermal Impedance 332°C/W
θJC Thermal Impedance 120°C/W
Reflow Soldering
Peak Temperature 260(0/–5)°C
Time at Peak Temperature 10 sec to 40 sec
= 25°C, unless otherwise noted
A
1
–0.3 V to VDD + 0.3 V or 30 mA,
whichever occurs first
–0.3 V to V
whichever occurs first
600 mA (pulsed at 1 ms,
10% duty cycle maximum)
+ 0.3 V or 30 mA,
DD
1
Overvoltages at IN, S, or D will be clamped by internal diodes. Current
should be limited to the maximum ratings given.
Table 4. Truth Table
IN Switch S1 Switch S2
0 On Off
1 Off On
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability. Only one absolute maximum rating may be
applied at any one time.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
Rev. 0| Page 5 of 12
Page 6
ADG849
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
1
IN
ADG849
V
2
DD
TOP VIEW
(Not to Scale)
GND
3
Figure 2. Pin Configuration
6
S2
D
5
S1
4
04737-0-002
Table 5. Terminology
Mnemonic Function
VDD Most Positive Power Supply Potential.
GND Ground (0 V) Reference.
IDD Positive Supply Current.
S Source Terminal. May be an input or output.
D Drain Terminal. May be an input or output.
IN Logic Control Input.
RON Ohmic Resistance between D and S.
∆RON On-Resistance Match Between any Two Channels i.e., RON Maximum to RON Minimum.
R
FLAT(ON)
Flatness is defined as the difference between the maximum and minimum value of on resistance as measured over the
specified analog signal range.
IS (Off) Source Leakage Current with the Switch Off.
ID, IS (On) Channel Leakage Current with the Switch On.
VD (VS) Analog Voltage on Terminals D, S.
V
Maximum Input Voltage for Logic 0.
INL
V
Minimum Input Voltage for Logic 1.
INH
I
(I
) Input Current of the Digital Input.
INL
INH
CS (Off) Off Switch Source Capacitance. Measured with reference to ground.
CD, CS (On) On Switch Capacitance. Measured with reference to ground.
tON Delay time between the 50% and 90% points of the digital input and switch on condition.
t
Delay time between the 50% and 90% points of the digital input and switch off condition.
OFF
t
On or off time measured between the 80% points of both switches when switching from one to another.
BBM
Charge
A measure of the glitch impulse transfered from the digital input to the analog output during switching.
Injection
Crosstalk A measure of unwanted signal that is coupled through from one channel to another as a result of parasitic capacitance.
Off Isolation A measure of unwanted signal coupling through an off switch.
Bandwidth The frequency at which the output is attenuated by 3 dB.
On-Response The frequency response of the on switch.
Insertion Loss The loss due to the on-resistance of the switch.
THD + N The ratio of harmonic amplitudes plus the noise of a signal to the fundamental.
Rev. 0| Page 6 of 12
Page 7
ADG849
TYPICAL PERFORMANCE CHARACTERISTICS
0.6
TA = 25°C
0.5
0.4
(Ω)
0.3
ON
R
0.2
0.1
0
0123456
Figure 3. On-Resist ance vs. V
V
S/VD
(V)
4.5V
5V
5.5V
, VDD = 5 V ±10%
D/VS
04737-0-003
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
ON RESISTANCE (Ω)
0.2
0.1
0
0.5 1.0 1.5 2.0 2.5 3.0
0
V
Figure 6. On-Resistance vs. Temperature, V
S/VD
(V)
+85°C
DD
+125°C
+25°C
–40°C
= 3 V
04737-0-006
0.9
0.8
0.7
0.6
0.5
(Ω)
ON
0.4
R
0.3
0.2
0.1
0
0.5 1.0 1.5 2.0 2.5 3.0 3.50
Figure 4. On-Resist ance vs. V
0.8
0.7
0.6
0.5
0.4
0.3
ON RESISTANCE (Ω)
0.2
0.1
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
2.5V
V
S/VD
V
S/VD
2.7V
3V
3.3V
(V)
D/VS
(V)
3.6V
, VDD = 2.5 V to 3.6 V
Figure 5. On-Resistance vs. Temperature, V
+125°C
+85°C
+25°C
–40°C
= 5 V
DD
5.0
04737-0-004
04737-0-005
120
VDD = 5V
100
80
60
LEAKAGE (nA)
40
20
0
10 40 60 100 120
20 80
TEMPERATURE (°C)
ID, IS (ON)
IS (OFF)
Figure 7. Leakage Currents vs. Temperature, V
90
VDD = 3V
80
70
60
50
40
LEAKAGE (nA)
30
20
10
0
10 40 60 100 120
20 80
TEMPERATURE (°C)
Figure 8. Leakage Currents vs. Temperature, V
= 5 V
DD
ID, IS (ON)
IS (OFF)
= 3 V
DD
04737-0-017
04737-0-018
Rev. 0| Page 7 of 12
Page 8
ADG849
250
TA = 25°C
200
150
100
CHARGE INJECTION (pC)
50
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VDD = 3V
DRAIN VOLTAGE (V)
Figure 9. Charge Injection
VDD = 5V
04737-0-011
0
–10
–20
–30
–40
–50
–60
OFF ISOLATION (dB)
–70
–80
–90
10k 100k 1M 10M 100M
FREQUENCY (MHz)
TA = 25°C
V
DD
Figure 12. Off Isolation vs. Frequency
= 5V/3V
04737-0-014
20
18
16
14
12
10
TIME (ns)
8
6
4
2
0
–40 –20 0 20 40 60 80 100 120
1
0
–1
–2
–3
–4
–5
ON RESPONSE (dB)
–6
–7
–8
–9
10k 100k 1M 10M 100M
t
ON
t
OFF
t
ON
t
OFF
Figure 10. t
TEMPERATURE (°C)
vs. Temperature
ON/tOFF
FREQUENCY (MHz)
VDD = 3.3V
VDD = 5V
TA = 25°C
V
= 5V/3V
DD
Figure 11. Bandwidth
04737-0-012
04737-0-013
0
–10
–20
–30
–40
–50
CROSSTALK (dB)
–60
–70
–80
10k 100k 1M 10M 100M
FREQUENCY (MHz)
TA = 25°C
V
DD
Figure 13. Cross talk vs. Frequency
0.10
0.09
0.08
0.07
0.06
0.05
0.04
THD + N (%)
0.03
0.02
0.01
2V p-p
0
20 40 80 100 120 140 200
1V p-p
60 160 180
FREQUENCY (kHz)
VDD = 5V
Figure 14. Total Harmonic Distortion + Noise
= 5V/3V
04737-0-015
04737-0-019
Rev. 0| Page 8 of 12
Page 9
ADG849
V
V
TEST CIRCUITS
I
DS
V1
SD
V
S
RON = V1/I
Figure 15. On-Resistance
S
S
DS
04737-0-008
Figure 16. Off-Leakage
V
DD
0.1µF
V
DD
S2
V
S
S1
IN
GND
D
R
L
50Ω
V
C
L
35pF
OUT
Figure 18. Switching Times, t
V
DD
0.1µF
V
DD
S2
S
S1
IN
GND
D
R
L
50Ω
V
C
L
35pF
OUT
Figure 19. Break-Before-Make Time Delay, t
V
DD
V
OUT
IN
V
OUT
S2
V
S
D
S1
IN
GND
NC
V
1nF
Figure 20. Charge Injection
D
SW ON
ID (OFF)IS (OFF)
V
D
04737-0-009
NC
SD
ID (ON)
A
V
D
Figure 17. On-Leakage
V
IN
V
OUT
ON
0V
V
IN
V
OUT
∆V
OUT
50% 50%
t
ON
, t
OFF
50% 50%
80%
t
BBM
BBM
SW OFF
= CL ×∆V
Q
INJ
90% 90%
80%
t
BBM
OUT
t
OFF
04449-0-022
04449-0-024
04449-0-023
04449-0-021
Rev. 0| Page 9 of 12
Page 10
ADG849
NC
V
DD
0.1µF
V
DD
S2
OFF ISOLATION = 20 LOG
S1
D
GND
Figure 21. Off Isolation
50Ω
V
DD
0.1µF
NETWORK
ANALYZER
50Ω
V
S
V
OUT
R
L
50Ω
04449-0-025
V
OUT
VS
NETWORK
ANALYZER
V
OUT
R
L
50Ω
50Ω
V
S
CHANNEL-TO-CHANNEL CROSSTALK = 20 LOG
V
DD
S1
S2
GND
D
R
50Ω
V
OUT
V
04737-0-016
S
Figure 22. Channel-to-Channel Crosstalk
V
DD
0.1µF
V
GND
DD
S1S2
D
NETWORK
ANALYZER
50Ω
V
V
OUT
R
L
50Ω
S
04449-0-026
WITH SWITCH
V
INSERTION LOSS = 20 LOG
OUT
WITHOUT SWITCH
V
OUT
Figure 23. Bandwidth
Rev. 0| Page 10 of 12
Page 11
ADG849
OUTLINE DIMENSIONS
2.00 BSC
5 4
1.25 BSC
1.00
0.90
0.70
0.10MAX
6
1
2
PIN 1
1.30 BSC
0.30
0.15
0.10 COPLANARITY
COMPLIANT TO JEDEC STANDARDS MO-203AB
Dimensions shown in Millimeters
2.10 BSC
3
0.65 BSC
1.10 MAX
0.22
0.08
SEATING
PLANE
Figure 24. 6-Lead SC70 Package
[KS-6]
0.46
8°
4°
0°
0.36
0.26
ORDERING GUIDE
Package
Model Temperature Range Package Description
ADG849YKSZ-500RL7
2
–40°C to +125°C SC70 (Plastic Surface Mount) KS-6 SNA
ADG849YKSZ-REEL2 –40°C to +125°C SC70 (Plastic Surface Mount) KS-6 SNA
ADG849YKSZ-REEL72 –40°C to +125°C SC70 (Plastic Surface Mount) KS-6 SNA
1
Branding on all packages is limited to three characters due to space constraints.
2
Z = Pb-free part.
Option
Branding
1
Rev. 0| Page 11 of 12
Page 12
ADG849
NOTES
© 2004 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D04737-0-7/04(0)
Rev. 0| Page 12 of 12
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