Datasheet ADG839 Datasheet (Analog Devices)

0.35 Ω CMOS 1.65 V to 3.6 V

S

S

FEATURES

1.65 V to 3.6 V operation
Ultralow on resistance:

0.35 Ω typical

0.5 Ω max at 2.7 V supply

Excellent audio performance, ultralow distortion:

0.055 Ω typical

0.09 Ω max R

High current carrying capability:

300 mA continuous

500 mA peak current at 3.3 V
Automotive temperature range: –40°C to +125°C
Rail-to-rail switching operation
Typical power consumption (<0.1 µW)

APPLICATIONS

Cellular phones
PDAs
MP3 players
Power routing
Battery-powered systems
PCMCIA cards
Modems
Audio and video signal routing
Communication systems

flatness

ON

Single SPDT Switch/2:1 MUX

ADG839

FUNCTIONAL BLOCK DIAGRAM

ADG839

2

1

IN

SWITCHES SHOWN

FOR A LOGIC 1 INPUT

Figure 1.

PRODUCT HIGHLIGHTS

1. 0.6 Ω over full temperature range of –40°C to +125°C.

2. Compatible with 1.8 V CMOS logic.

3. High current handling capability (300 mA continuous

current at 3.3 V).

4. Low THD + N (0.01% typ).

5. Tiny SC70 package.

D

04449-001

GENERAL DESCRIPTION

The ADG839 is a low voltage CMOS device containing a single­pole, double-throw (SPDT) switch. This device offers ultralow
on resistance of less than 0.6 Ω over the full temperature range.
The ADG839 is fully specified for 1.8 V, 2.5 V, and 3.3 V supply
operation.

Each switch conducts equally well in both directions when on
and has an input signal range that extends to the supplies. The
ADG839 exhibits break-before-make switching action.

The ADG839 is available in a 6-lead SC70 package.

Rev. 0

Information furnished by Analog Devices is believed to be accurate and reliable.
However, no responsibility is assumed by Analog Devices for its use, nor for any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication
or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.

Table 1. ADG839 Truth Table

Logic Switch 2 (S2) Switch 1 (S1)

0 Off On
1 On Off

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone]
Fax: [phone] © 2004 Analog Devices, Inc. All rights reserved.

www.analog.com

ADG839

TABLE OF CONTENTS

Specifications—2.7 V to 3.6 V ........................................................ 3

Typical Perfor m a n c e C haracter i s t ic s ..............................................8

Specifications—2.3 V to 2.7 V ........................................................ 4

Specifications—1.65 V to 1.95 V .................................................... 5

Absolute Maximum Ratings............................................................ 6

ESD Caution.................................................................................. 6

Pin Configuration and Function Descriptions............................. 7

REVISION HISTORY

10/04—Initial Version: Revision 0

Te r mi n ol o g y .................................................................................... 11

Test C ir c uit s ..................................................................................... 12

Outline Dimensions ....................................................................... 14

Ordering Guide .......................................................................... 14

Rev. 0 | Page 2 of 16

ADG839

SPECIFICATIONS1—2.7 V TO 3.6 V

VDD = 2.7 V to 3.6 V, GND = 0 V, unless otherwise noted.

Table 2.

−40°C to −40°C to
Parameter +25°C +85°C +125°C Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to VDDV VDD = 2.7 V
On Resistance (RON) 0.35 Ω typ VDD = 2.7 V, VS = 0 V to VDD, IS = 100 mA;

0.5 0.56 0.61 Ω max Figure 19
On Resistance Match between 0.04 Ω typ VDD = 2.7 V, VS = 0.9 V, IS = 100 mA

Channels (∆RON) 0.075 0.085 0.095 Ω max

On Resistance Flatness 0.055 Ω typ VDD = 2.7 V, VS = 0 V to VDD,
(R
LEAKAGE CURRENTS VDD = 3.6 V

Source Off Leakage IS (OFF) ±0.2 nA typ VS = 0.6 V/3.3 V, VD = 3.3 V/0.6 V; Figure 20

Channel On Leakage ID, IS (ON) ±0.2 nA typ VS = VD = 0.6 V or 3.3 V; Figure 21
DIGITAL INPUTS

Input High Voltage, V

Input Low Voltage, V

Input Current

I
±0.1 µA max
CIN, Digital Input Capacitance 3.2 pF typ

DYNAMIC CHARACTERISTICS

t

ON

16 18 19 ns max VS = 1.5 V/0 V; Figure 22
t

OFF

8.5 9 9.5 ns max VS = 1.5 V; Figure 22
Break-Before-Make Time Delay 5 ns typ RL = 50 Ω, CL = 35 pF; Figure 23
(t
Charge Injection 70 pC typ VS = 1.5 V, RS = 0 Ω, CL = 1 nF; Figure 24
Off Isolation −57 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz; Figure 25
Channel-to-Channel Crosstalk −57 dB typ

Total Harmonic Distortion
(THD + N)

Insertion Loss −0.01 dB typ RL = 50 Ω, CL = 5 pF; Figure 27

−3 dB Bandwidth 25 MHz typ RL = 50 Ω, CL = 5 pF; Figure 27
CS (OFF) 74 pF typ
CD, CS (ON) 120 pF typ VDD = 3.6 V

POWER REQUIREMENTS Digital inputs = 0 V or 3.6 V

I

DD

1 4 µA max

1

Temperature range for the Y version is −40°C to +125°C.

2

Guaranteed by design; not subject to production test.

) 0.07 0.082 0.09 Ω max IS = 100 mA

FLAT (ON)

INH

INL

or I

INL

INH

2 V min

0.8 V max

0.005 µA typ VIN = V

2

INL

or V

INH

12 ns typ RL = 50 Ω, CL = 35 pF

6.5 ns typ RL = 50 Ω, CL = 35 pF

) 1 ns min VS1 = VS2 = 1.5 V;

BBM

S1 −S2;

= 50 Ω, CL = 5 pF, f = 100 kHz; Figure 26

R

L

0.013 % R

= 32 Ω, f = 20 Hz to 20 kHz, VS = 3 V p-p

L

0.003 µA typ

Rev. 0 | Page 3 of 16

ADG839

SPECIFICATIONS1—2.3 V TO 2.7 V

VDD = 2.5 V ± 0.2 V, GND = 0 V, unless otherwise noted.

Table 3.

−40°C to −40°C to
Parameter +25°C +85°C +125°C Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to VDD V
On Resistance (RON) 0.35 Ω typ VDD = 2.3 V, VS = 0 V to VDD,

0.5 0.55 0.6 Ω max IS = 100 mA; Figure 19
On Resistance Match between 0.04 Ω typ VDD = 2.3 V, VS = 0.95 V,

Channels (∆RON) 0.075 0.085 0.095 Ω max IS = 100 mA

On Resistance Flatness (R

0.13 0.13 Ω max IS = 100 mA
LEAKAGE CURRENTS VDD = 2.7 V

Source Off Leakage IS (OFF) ±0.2 nA typ VS = 0.6 V/2.4 V, VD = 2.4 V/0.6 V; Figure 20
Channel On Leakage ID, IS (ON) ±0.2 nA typ VS = VD = 0.6 V or 2.4 V; Figure 21

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V

INH

INL

Input Current

I

or I

INL

INH

±0.1 µA max
CIN, Digital Input Capacitance 3.2 pF typ

DYNAMIC CHARACTERISTICS

t

ON

18 20 21 ns max VS = 1.5 V/0 V; Figure 22
t

7.5 ns typ RL = 50 Ω, CL = 35 pF

OFF

9.2 9.5 9.8 ns max VS = 1.5 V; Figure 22
Break-before-Make Time Delay (t
1 ns min VS1 = VS2 = 1.5 V;
Charge Injection 60 pC typ VS = 1.25 V, RS = 0 Ω, CL = 1 nF; Figure 24
Off Isolation −57 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz; Figure 25
Channel-to-Channel Crosstalk −57 dB typ

Total Harmonic Distortion (THD + N) 0.021 % RL = 32 Ω, f = 20 Hz to 20 kHz, VS = 2 V p-p
Insertion Loss −0.01 dB typ RL = 50 Ω, CL = 5 pF; Figure 27
–3 dB Bandwidth 25 MHz typ RL = 50 Ω, CL = 5 pF; Figure 27
CS (OFF) 78 pF typ
CD, CS (ON) 127 pF typ VDD = 2.7 V

POWER REQUIREMENTS Digital inputs = 0 V or 2.7 V

I

DD

1 4 µA max

1

Temperature range for the Y version is −40°C to +125°C.

2

Guaranteed by design; not subject to production test.

) 0.045 Ω typ VDD = 2.3 V, VS = 0 V to VDD,

FLAT (ON)

1.7 V min

0.7 V max

0.005 µA typ VIN = V

2

INL

or V

14.5 ns typ RL = 50 Ω, CL = 35 pF

) 7 ns typ RL = 50 Ω, CL = 35 pF; Figure 23

BBM

S1−S2;

= 50 Ω, CL = 5 pF, f = 100 kHz; Figure 26

R

L

0.003 µA typ

INH

Rev. 0 | Page 4 of 16

ADG839

SPECIFICATIONS1—1.65 V TO 1.95 V

VDD = 1.65 V ± 1.95 V, GND = 0 V, unless otherwise noted.

Table 4.

−40°C to −40°C to
Parameter +25°C +85°C +125°C Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to V
On Resistance (RON) 0.5 Ω typ VDD = 1.8 V, VS = 0 V to VDD, IS = 100 mA;

0.8 1.2 1.2 Ω max Figure 19

1.3 2.5 2.5 Ω max VDD = 1.65 V, VS = 0 V to VDD, IS = 100 mA
On Resistance Match between 0.04 Ω typ VDD = 1.65 V, VS = TBD, IS = 100 mA

Channels (∆RON) 0.075 0.08 0.08 Ω max IS = 100 mA
On Resistance Flatness (R

) 0.3 Ω typ VDD = 1.65 V, VS = 0 V to VDD, IS = 100 mA

FLAT (ON)

LEAKAGE CURRENTS VDD = 1.95 V

Source Off Leakage IS (OFF) ±0.2 nA typ

Channel On Leakage ID, IS (ON) ±0.2 nA typ VS = VD = 0.6 V or 1.65 V; Figure 21

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V

INH

INL

0.65 V

0.35 V

DD

DD

Input Current

I

INL

or I

INH

0.005 µA typ VIN = V
±0.1 µA max
CIN, Digital Input Capacitance 3.2 pF typ

DYNAMIC CHARACTERISTICS

t

ON

2

20 ns typ RL = 50 Ω, CL = 35 pF
28 30 31 ns max VS = 1.5 Ω/0 V; Figure 22
t

8 ns typ RL = 50 Ω, CL = 35 pF

OFF

10.1 10.5 10.7 ns max VS = 1.5 V; Figure 22
Break-before-Make Time Delay (t

) 12 ns typ RL = 50 Ω, CL = 35 pF

BBM

1 ns min VS1 = VS2 = 1 V; Figure 23
Charge Injection 50 pC typ VS = 1 V, RS = 0 V, CL = 1 nF; Figure 24
Off Isolation −57 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz; Figure 25
Channel-to-Channel Crosstalk −57 dB typ S1 −S2;
R
Total Harmonic Distortion (THD + N) 0.033 % RL = 32 Ω, f = 20 Hz to 20 kHz,

Insertion Loss −0.01 dB typ RL = 50 Ω, CL = 5 pF; Figure 27
–3 dB Bandwidth 25 MHz typ RL = 50 Ω, CL = 5 pF; Figure 27
CS (OFF) 83 pF typ VDD = 1.95 V
CD, CS (ON) 132 pF typ Digital inputs = 0 V or 1.95 V

POWER REQUIREMENTS Digital inputs = 0 V or 1.95 V

I

DD

0.003 µA typ

1 4 µA max

1

Temperature range for the Y version is −40°C to +125°C.

2

Guaranteed by design; not subject to production test.

V

DD

V min
V max

= 0.6 V/1.65 V, VD = 1.65 V/0.6 V;

V

S

Figure 20

or V

INL

INH

= 50 Ω, CL = 5 pF, f = 100 kHz; Figure 26

L

V

= 1 V p-p

S

Rev. 0 | Page 5 of 16

ADG839

ABSOLUTE MAXIMUM RATINGS

TA = 25°C, unless otherwise noted.

Table 5.

Parameter Rating

VDD to GND −0.3 V to +4.6 V
Analog Inputs
Digital Inputs

1

−0.3 V to VDD + 0.3 V

−0.3 V to 4.6 V or 10 mA,
whichever occurs first

Peak Current, S or D

3.3 V Operation 500 mA

2.5 V Operation 460 mA

1.8 V Operation

420 mA (pulsed at 1 ms,
10% duty cycle max)

Continuous Current, S or D

3.3 V Operation 300 mA

2.5 V Operation 275 mA

1.8 V Operation 250 mA

Operating Temperature Range

Automotive (Y Version) −40°C to +125°C
Storage Temperature Range −65°C to +150°C
Junction Temperature 150°C
SC70 Package 332°C/W

θJA Thermal Impedance 120°C/W
Lead Temperature,

300°C

Soldering (10 seconds)
IR Reflow, Peak Temperature 220°C

_______________________ ________________________________ ____

1

Overvoltages at S or D are clamped by internal diodes. Current should be

limited to the maximum ratings given.

ESD CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.

Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability. Only one absolute maximum rating may be
applied at any one time.

Rev. 0 | Page 6 of 16

ADG839

PIN CONFIGURATION AND FUNCTION DESCRIPTIONS

V

GND

IN

DD

1

ADG839

2

TOP VIEW

3

(Not to Scale)

6

S2

5

D

4

S1

04449-002

Figure 2. Pin Configuration

Table 6. Pin Function Descriptions

Pin No. Mnemonic Description

1 IN Logic control input.
2 V

DD

Most positive power supply potential.
3 GND Ground (0 V) reference.
4, 6 S1, S2 Source terminal. Can be an input or output.
5 D Drain terminal. Can be an input or output.

For more information, refer to the Terminology section.

Rev. 0 | Page 7 of 16

ADG839

TYPICAL PERFORMANCE CHARACTERISTICS

0.40

0.35

0.30

0.25

0.20

0.15

ON RESISTANCE (Ω)

0.10

0.05

0

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

VD, VS(V)

Figure 3. On Resistance vs. V

0.45

0.40

0.35

0.30

0.25

0.20

0.15

ON RESISTANCE (Ω)

0.10

0.05

0

0 0.5 1.0 1.5 2.0 2.5

VDD = 2.3V

VD, VS(V)

Figure 4. On Resistance vs. V

0.8

0.7

0.6

0.5

0.4

0.3

ON RESISTANCE (Ω)

0.2

V

DD

= 1.80V

VDD = 3.0V

= 3.3V

V

DD

V

TA = 25°C

(VS) VDD = 3 V to 3.6 V

D

= 2.5V

V

DD

= 2.7V

V

DD

(VS) VDD = 2.5 V ± 0.2 V

D

VDD = 1.65V

= 1.95V

V

DD

= 3.6V

DD

TA = 25°C

04449-022

04449-023

0.50

0.45

0.40

0.35

0.30

0.25

0.20

0.15

ON RESISTANCE (Ω)

0.10

0.05

0

0 3.02.52.01.51.00.5

Figure 6. On Resistance vs. V

0.6

0.5

0.4

0.3
–40°C

0.2

ON RESISTANCE (Ω)

0.1

0

0 2.52.01.51.00.5

Figure 7. On Resistance vs. V

0.7

0.6

0.5

0.4

0.3

ON RESISTANCE (Ω)

0.2

+25°C

+125°C

+85°C

+25°C

–40°C

VDD = 3.3V

VD, VS(V)

(VS) for Different Temperature, VDD = 3.3 V

D

+125°C

+85°C

+25°C

VDD = 2.5V

VD, VS(V)

(VS) for Different Temperature, VDD = 2.5 V

D

+125°C

+85°C

–40°C

04449-025

04449-026

0.1

0

0 2.01.81.61.41.21.00.80.60.40.2

Figure 5. On Resistance vs. V

VD, VS(V)

(VS) VDD = 1.8 V ± 0.15 V

D

TA = 25°C

04449-024

Rev. 0 | Page 8 of 16

0.1

VDD = 1.8V

0

0 1.81.61.41.21.00.80.60.40.2

Figure 8. On Resistance vs. V

VD, VS(V)

(VS) for Different Temperature, VDD = 1.8 V

D

04449-027

ADG839

100

VDD = 3.3V

90
80
70
60
50
40
30

CURRENT (nA)

20
10

0

–10

–40 120100806040200–20

TEMPERATURE (°C)

Figure 9. Leakage Current vs. Temperature, V

80

VDD = 2.5V

70

60

50

40

30

CURRENT (nA)

20

10

0

–10

–40 120100806040200–20

TEMPERATURE (°C)

Figure 10. Leakage Current vs. Temperature, V

70

VDD = 1.8V

60

50

40

30

20

CURRENT (nA)

10

0

–10

–40 120100806040200–20

TEMPERATURE (°C)

Figure 11. Leakage Current vs. Temperature, V

ID, IS (ON)

(OFF)

I

S

= 3.3 V

DD

ID, IS (ON)

(OFF)

I

S

= 2.5 V

DD

ID, IS (ON)

I

S

= 1.8 V

DD

04449-012

04449-013

(OFF)

04449-014

180

TA = 25°C

160

140

120

100

80

60

CHARGE INJECTION (pC)

40

20

0

0 0.5 1.0 1.5 2.0 2.5 3.0

VD (V)

V

DD

VDD = 3.3V

= 1.8V

= 2.5V

V

DD

Figure 12. Charge Injection vs. Source Voltage

25

V

= 1.8V

t

ON

20

15

TIME (ns)

10

t

OFF

5

0
–40 –20 0 20 40 60 80 100 120

Figure 13. t

DD

= 2.5V

V

DD

= 3.3V

V

DD

VDD = 1.8V

TEMPERATURE (°C)

Times vs. Temperature

ON/tOFF

V

DD

= 2.5V

V

DD

= 3.3V

1
0

–1

TA = 25°C

= 3.3V/2.5V/1.8V

V

DD

–2
–3
–4
–5
–6
–7
–8

ON RESPONSE (dB)

–9
–10
–11
–12

100 1k 100k 1M 10M10k 100M

FREQUENCY (Hz)

Figure 14. Bandwidth

04449-015

04449-016

04449-017

Rev. 0 | Page 9 of 16

ADG839

0

TA = 25°C
V

–20

–40

= 3.3V/2.5V/1.8V

DD

0.05

0.04

TA = 25°C
32Ω LOAD

VDD = 1.8V; V p-p = 1V

–60

–80

OFF ISOLATION (dB)

–100

–120

100 1k 100k 1M 10M 100M10k 1G

FREQUENCY (Hz)

Figure 15. Off Isolation vs. Frequency

0

TA = 25°C

= 3.3V/2.5V/1.8V

V

DD

–20

–40

–60

–80

CROSS TALK (dB)

–100

–120

100 1k 100k 1M 10M 100M10k 1G

FREQUENCY (Hz)

Figure 16. Cross talk vs. Frequency

04449-018

04449-019

0.03

THD+N (%)

= 2.5V; V p-p = 2V

V

0.02

0.01
10 100 10k1k 100k

DD

V

= 3.3V; V p-p = 3V

DD

FREQUENCY (Hz)

Figure 17. Total Harmonic Distortion + Noise

0

TA = 25°C

= 3.3V/2.5V/1.8V

V

DD

–20

–40

–60

PSRR (dB)

–80

–100

–120

100 1k 100k10k 1M

FREQUENCY (Hz)

Figure 18. AC PSRR

04449-020

04449-021

Rev. 0 | Page 10 of 16

ADG839

TERMINOLOGY

I

DD

Positive supply current.

(VS)

V

D

Analog voltage on Terminals D and S.

R

ON

Ohmic resistance between D and S.

R

FLAT (ON)

Flatness is defined as the difference between the maximum and
minimum value of on resistance as measured.

∆R

ON

On resistance match between any two channels.

(OFF)

I

S

Source leakage current with the switch off.

(OFF)

I

D

Drain leakage current with the switch off.

, IS (ON)

I

D

Channel leakage current with the switch on.

V

INL

Maximum input voltage for Logic 0.

V

INH

Minimum input voltage for Logic 1.

(I

INL

INH

)

I

Input current of the digital input.

(OFF)

C

S

Off switch source capacitance. Measured with reference to
ground.

(OFF)

C

D

Off switch drain capacitance. Measured with reference to
ground.

, CS (ON)

C

D

On switch capacitance. Measured with reference to ground.

C

IN

Digital input capacitance.

t

ON

Delay time between the 50% and the 90% points of the digital
input and switch on condition.

t

OFF

Delay time between the 50% and the 90% points of the digital
input and switch off condition.

t

BBM

On or off time measured between the 80% points of both
switches when switching from one to another.

Charge Injection
A measure of the glitch impulse transferred from the digital
input to the analog output during on-off switching.

Off Isolation
A measure of unwanted signal coupling through an off switch.

Crosstalk
A measure of unwanted signal which is coupled through from
one channel to another as a result of parasitic capacitance.

−3 dB Bandwidth
The frequency at which the output is attenuated by 3 dB.

On Response
The frequency response of the on switch.

Insertion Loss
The attenuation between the input and output ports of the
switch when the switch is in the on condition, and is due to the
on resistance of the switch.

THD + N

The ratio of the harmonic amplitudes plus noise of a signal to
the fundamental.

PSRR
Power Supply Rejection Ratio. This is a measure of the coupling
of unwanted ac signals on the power supply to the switch
output when the supply is not decoupled.

Rev. 0 | Page 11 of 16

ADG839

V

V

V

V

V

TEST CIRCUITS

V

SD

S

Figure 19. On Resistance

IS (OFF) ID (OFF)

SD

A A

I

DS

04449-003

S

V

D

04449-004

NC

Figure 20. Off Leakage

DD

0.1µF

V

DD

S2

V

S

S1

IN

D

C

R

L

35pF

50Ω

V

IN

V

OUT

IN

V

OUT

V

L

50% 50%

50% 50%

90% 90%

SD

Figure 21. On Leakage

ID (ON)

A

V

D

04449-005

IN

GND

Figure 22. Switching Times, tON, t

t

ON

OFF

t

OFF

04449-006

V

DD

0.1µF

V

DD

V

V

S2

S

S1

IN

IN

GND

D

R
50Ω

C

L

L

35pF

Figure 23. Break-before-Make Time Delay, t

V

OUT

IN

V

OUT

80% 80%

t

BBM

BBM

t

BBM

04449-007

V

V

DD

0.1µF

V

DD

S2

D

S

S1

C

IN

GND

1nF

L

VIN (NORMALLY
CLOSED SWITCH)

NC
V

OUT

(NORMALLY

V

IN

OPEN SWITCH)

V

OUT

∆V

OUT

Figure 24. Charge Injection

Q

INJ

ON

= CL×∆V

OUT

OFF

04449-008

Rev. 0 | Page 12 of 16

ADG839

V

V

V

S1

S2

0.1µF

DD

V

DD

GND

V

OUT

V

D

R
50Ω

S

04449-010

V

DD

0.1µF

V

DD

S1

IN

IN

OFF ISOLATION = 20 LOG

0.1µF

GND

V

DD

S2

D

NC

50Ω

V

OUT

V

S

Figure 25. Off Isolation

NETWORK

ANALYZER

50Ω

V

V

OUT

R

L

50Ω

NETWORK
ANALYZER

V

OUT

S

04449-009

CHANNEL-TO-CHANNEL CROSSTALK = 20 LOG

V

R
50Ω

50Ω

S

L

IN

Figure 26. Channel-to-Channel Crosstalk

V

DD

S1

IN

IN

INSERTION LOSS = 20 LOG

S2

D

GND

NC

V

OUT

V

WITHOUT SWITCH

OUT

NETWORK

ANALYZER

50Ω

R

L

50Ω

WITH SWITCH

NETWORK
ANALYZER

V

S

V

OUT

04449-011

50Ω

V

S

V

OUT

R
50Ω

Figure 27. Bandwidth

V

DD

VDD± 50mV

BIAS

TEE

L

NC

V

DD

IN

S1
S2

GND

V

IN

D

NC

04449-028

Figure 27. PSRR

Rev. 0 | Page 13 of 16

ADG839

OUTLINE DIMENSIONS

2.00 BSC

5 4

1.25 BSC

1.00

0.90

0.70

0.10MAX

6

1

2

PIN 1

1.30 BSC

0.30

0.15

0.10 COPLANARITY
COMPLIANT TO JEDEC STANDARDS MO-203AB

3

0.65 BSC

2.10 BSC

1.10 MAX

SEATING
PLANE

0.22

0.08
8°

4°
0°

Figure 28. 6-Lead Thin Shrink Small Outline Transistor Package [SC70]

(KS-6)

Dimensions shown in millimeters

0.46

0.36

0.26

ORDERING GUIDE

Model Temperature Range Package Description Package Option Branding

ADG839YKSZ-500RL72–40°C to +125°C 6-Lead Thin Shrink Small Outline Transistor Package KS-6 SUA
ADG839YKSZ-REEL
ADG839YKSZ-REEL7

1

Branding on this package is limited to three characters due to space constraints.

2

Z = Pb-free part.

2

–40°C to +125°C 6-Lead Thin Shrink Small Outline Transistor Package KS-6 SUA

2

–40°C to +125°C 6-Lead Thin Shrink Small Outline Transistor Package KS-6 SUA

1

Rev. 0 | Page 14 of 16

ADG839

NOTES

Rev. 0 | Page 15 of 16

ADG839

NOTES

© 2004 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.

D04449–0–10/04(0)

Rev. 0 | Page 16 of 16