Datasheet ADG836L Datasheet (Analog Devices)

0.5 Ω CMOS 1.65 V to 3.6 V

FEATURES

0.5 Ω typical on resistance

0.8 Ω maximum on resistance at 125°C

1.65 V to 3.6 V operation
Automotive temperature range: –40°C to +125°C
Guaranteed leakage specifications up to 125°C
High current carrying capability: 300 mA continuous
Rail-to-rail switching operation
Fast switching times <20 ns
Typical power consumption: <0.1 µW

APPLICATIONS

Cellular phones
PDAs
MP3 players
Power routing
Battery-powered systems
PCMCIA cards
Modems
Audio and video signal routing
Communication systems

GENERAL DESCRIPTION

The ADG836L is a low voltage CMOS device containing two
independently selectable single-pole, double-throw (SPDT)
switches. This device offers ultralow on resistance of less than

0.8 Ω over the full temperature range. The ADG836L is fully
specified for 3.3 V, 2.5 V, and 1.8 V supply operation.

Each switch conducts equally well in both directions when on
and has an input signal range that extends to the supplies. The
ADG836L exhibits break-before-make switching action.

The ADG836L is available in a 10-lead package.

Dual SPDT/2:1 MUX

ADG836L

FUNCTIONAL BLOCK DIAGRAM

ADG836L

S1A

S1B

IN1

IN2

S2A

S2B

SWITCHES SHOWN FOR A LOGIC 1 INPUT

Figure 1.

PRODUCT HIGHLIGHTS

1. Less than 0.8 Ω over full temperature range of

−40°C to +125°C.

2. Single 1.65 V to 3.6 V operation.

3. Compatible with 1.8 V CMOS logic.

4. High current handling capability (300 mA continuous

current at 3.3 V).

5. Low THD + N (0.02% typ).

6. Small 10-lead MSOP package.

D1

D2

04753-0-001

Rev. A

Information furnished by Analog Devices is believed to be accurate and reliable.
However, no responsibility is assumed by Analog Devices for its use, nor for any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication
or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone]
Fax: [phone] © 2004 Analog Devices, Inc. All rights reserved.

www.analog.com

ADG836L

TABLE OF CONTENTS

Specifications..................................................................................... 3

Absolute Maximum Ratings............................................................ 6

Truth Table ........................................................................................ 6

Pin Terminology ............................................................................... 7

Typical Performance Characteristics ............................................. 8

Test Circuits..................................................................................... 11

Outline Dimensions....................................................................... 13

Ordering Guide........................................................................... 14

REVISION HISTORY

5/04—Data Sheet Changed from Rev. 0 to Rev. A

Updated Ordering Guide............................................................... 14

4/04—Revision 0: Initial Version

Rev. A | Page 2 of 16

ADG836L

SPECIFICATIONS

Table 1. VDD = 2.7 V to 3.6 V, GND = 0 V, unless otherwise noted.

Parameter +25°C −40°C – +85°C −40°C – +125°C Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to V
On Resistance (RON) 0.5 Ω typ VDD = 2.7 V, VS = 0 V to VDD, IS = 10 mA

0.65 0.75 0.8 Ω max (Figure 18)
On Resistance Match between

Channels (∆R
On Resistance Flatness (R

)

ON

FLAT (ON)

0.04 0.075 0.08

) 0.1 Ω typ VDD = 2.7 V, VS = 0 V to VDD, IS = 10 mA

0.15 0.16 Ω max
LEAKAGE CURRENTS VDD = 3.6 V

Source Off Leakage IS (OFF) ±0.2 nA typ VS = 0.6 V/3.3 V, VD = 3.3 V/0.6 V
±1 ±10 ±100 nA max (Figure 19)

Channel On Leakage ID, IS (ON) ±0.2 nA typ VS = VD = 0.6 V or 3.3 V (Figure 20)
±1 ±15 ±120 nA max
DIGITAL INPUTS

Input High Voltage, V

Input Low Voltage, V

Input Current, I

or I

INL

INH

INL

INH

2 V min

0.8 V max

0.005 µA typ VIN = V

±0.1 µA max

CIN, Digital Input Capacitance 4 pF typ
DYNAMIC CHARACTERISTICS

t

ON

2

21 ns typ RL = 50 Ω, CL = 35 pF
26 28 29 ns max VS = 1.5 V/0 V (Figure 21)
t

4 ns typ RL = 50 Ω, CL = 35 pF

OFF

7 8 9 ns max VS = 1.5 V (Figure 21)
Break-before-Make Time Delay

)

(t

BBM

17 ns typ R

5 ns min VS1 = VS2 = 1.5 V (Figure 22)
Charge Injection 40 pC typ VS = 1.5 V, RS = 0 Ω, CL = 1 nF (Figure 23)
Off Isolation −67 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz (Figure 24)
Channel-to-Channel Crosstalk −90 dB typ S1A−S2A/S1B−S2B (Figure 27)

−67 dB typ S1A−S1B/S2A−S2B (Figure 26)

Total Harmonic Distortion

0.02 % R

(THD + N)
Insertion Loss −0.05 dB typ RL = 50 Ω, CL = 5 pF (Figure 25)

−3 dB Bandwidth 57 MHz typ RL = 50 Ω, CL = 5 pF (Figure 25)
CS (OFF) 25 pF typ
CD, CS (ON) 75 pF typ

POWER REQUIREMENTS VDD = 3.6 V

I

DD

0.003 µA typ Digital inputs = 0 V or 3.6 V

1 4 µA max

1

Temperature range for Y version is −40°C to +125°C.

2

Guaranteed by design, not subject to production test.

1

DD

V VDD = 2.7 V

= 2.7 V, VS = 0.65 V, IS = 10 mA

Ω typ

V

DD

Ω max

or V

INL

INH

= 50 Ω, CL = 35 pF

L

R

= 50 Ω, CL = 5 pF, f = 100 kHz

L

R

= 50 Ω, CL = 5 pF, f = 100 kHz

L

= 32 Ω, f = 20 Hz to 20 kHz, VS = 2 V p-p

L

Rev. A | Page 3 of 16

ADG836L

Table 2. VDD = 2.5 V ± 0.2 V, GND = 0 V, unless otherwise noted.1

Parameter +25°C −40°C – +85°C −40°C – +125°C Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to V

DD

On Resistance (RON) 0.65 Ω typ VDD = 2.3 V, VS = 0 V to VDD, IS = 10 mA

0.72 0.8 0.88 Ω max (Figure 18)
On Resistance Match between 0.04 Ω typ VDD = 2.3 V, VS = 0.7 V, IS = 10 mA

Channels (∆RON) 0.08 0.085 Ω max

On Resistance Flatness (R

) 0.16 Ω typ VDD = 2.3 V, VS = 0 V to VDD, IS = 10 mA

FLAT (ON)

0.23 0.24 Ω max
LEAKAGE CURRENTS VDD = 2.7 V

Source Off Leakage IS (OFF) ±0.2 nA typ VS = 0.6 V/2.4 V, VD = 2.4 V/0.6 V
±0.4 ±4 ±45 nA max (Figure 19)

Channel On Leakage ID, IS (ON) ±0.2 nA typ VS = VD = 0.6 V or 2.4 V (Figure 20)
±0.6 ±12 ±90 nA max
DIGITAL INPUTS

Input High Voltage, V

Input Low Voltage, V

INH

INL

1.7 V min

0.7 V max

Input Current

I

or I

INL

INH

0.005 µA typ VIN = V
±0.1 µA max
CIN, Digital Input Capacitance 4 pF typ

DYNAMIC CHARACTERISTICS

t

ON

2

23 ns typ RL = 50 Ω, CL = 35 pF
29 30 31 ns max VS = 1.5 V/0 V (Figure 21)
t

5 ns typ RL = 50 Ω, CL = 35 pF

OFF

7 8 9 ns max VS = 1.5 V (Figure 21)
Break-before-Make Time Delay

(t

)

BBM

17 ns typ RL = 50 Ω, CL = 35 pF

5 ns min VS1 = VS2 = 1.5 V (Figure 22)
Charge Injection 30 pC typ VS = 1.25 V, RS = 0 Ω, CL = 1 nF (Figure 23)
Off Isolation −67 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz (Figure 24)
Channel-to-Channel Crosstalk −90 dB typ S1A−S2A/S1B−S2B;

−67 dB typ S1A−S1B/S2A−S2B;

Total Harmonic Distortion

0.022 % R

(THD + N)
Insertion Loss −0.06 dB typ RL = 50 Ω, CL = 5 pF (Figure 25)
–3 dB Bandwidth 57 MHz typ RL = 50 Ω, CL = 5 pF (Figure 25)
CS (OFF) 25 pF typ
CD, CS (ON) 75 pF typ

POWER REQUIREMENTS VDD = 2.7 V

I

DD

0.003 µA typ Digital inputs = 0 V or 2.7 V

1 4 µA max

1

Temperature range for Y version is −40°C to +125°C.

2

Guaranteed by design, not subject to production test.

V

or V

INL

R

= 50 V, CL = 5 pF, f = 100 kHz;Figure 27

L

R

= 50 Ω, CL = 5 pF, f = 100 kHz Figure 25

L

= 32 Ω, f = 20 Hz to 20 kHz, VS = 1.5 V p-p

L

INH

Rev. A | Page 4 of 16

ADG836L

Table 3. VDD = 1.65 V ± 1.95 V, GND = 0 V, unless otherwise noted.1

Parameter +25°C −40°C – +85°C −40°C – +125°C Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to V

DD

On Resistance (RON) 1 Ω typ VDD = 1.8 V, VS = 0 V to VDD, IS = 10 mA

1.4 2.2 2.2 Ω max (Figure 18)
2 4 4 Ω typ VDD = 1.65 V, VS = 0 V to VDD, IS = 10 mA
On Resistance Match between

Channels (∆R

)

ON

0.1 Ω typ V

LEAKAGE CURRENTS

Source Off Leakage IS (OFF) ±0.2 nA typ VS = 0.6 V/1.65 V, VD = 1.65 V/0.6 V
±0.4 ±4 ±25 nA max (Figure 19)

Channel On Leakage ID, IS (ON) ±0.2 nA typ VS = VD = 0.6 V or 1.65 V Figure 20
±0.6 ±10 ±75 nA max
DIGITAL INPUTS

Input High Voltage, V

Input Low Voltage, V

INH

INL

0.65 V

0.35 V

DD

DD

Input Current

I

INL

or I

INH

0.005 µA typ VIN = V
±0.1 µA max
CIN, Digital Input Capacitance 4 pF typ

DYNAMIC CHARACTERISTICS

t

ON

2

28 ns typ RL = 50 Ω, CL = 35 pF
37 38 39 ns max VS = 1.5 Ω/0 V (Figure 21)
t

7 ns typ RL = 50 Ω, CL = 35 pF

OFF

9 10 11 ns max VS = 1.5 V (Figure 21)
Break-before-Make Time Delay

)

(t

BBM

21 ns typ R

5 ns min VS1 = VS2 = 1 V (Figure 22)
Charge Injection 20 pC typ VS = 1 V, RS = 0 V, CL = 1 nF (Figure 23)
Off Isolation −67 dB typ

Channel-to-Channel Crosstalk −90 dB typ S1A−S2A/S1B−S2B;

−67 dB typ S1A−S1B/S2A−S2B;

Total Harmonic Distortion

0.14 % R

(THD + N)

Insertion Loss −0.08 dB typ RL = 50 Ω, CL = 5 pF (Figure 25)
–3 dB Bandwidth 57 MHz typ RL = 50 Ω, CL = 5 pF (Figure 25)
CS (OFF) 25 pF typ
CD, CS (ON) 75 pF typ

POWER REQUIREMENTS VDD = 1.95 V

I

DD

0.003 µA typ Digital inputs = 0 V or 1.95 V

1.0 4 µA max

1

Temperature range for Y version is −40°C to +125°C.

2

Guaranteed by design, not subject to production test.

V

= 1.65 V, VS = 0.7 V, IS = 10 mA

DD

V

= 1.95 V

DD

V min
V max

or V

INL

= 50 Ω, CL = 35 pF

L

= 50 Ω, CL = 5 pF, f = 100 kHz,

R

L

(Figure 24)

= 50 Ω, CL = 5 pF, f = 100 kHz

R

L

(Figure 27)

= 50 Ω, CL = 5 pF, f = 100 kHz

R

L

(Figure 25)

= 32 Ω, f = 20 Hz to 20 kHz,

L

V

= 1.2 V p-p

S

INH

Rev. A | Page 5 of 16

ADG836L

ABSOLUTE MAXIMUM RATINGS

TA = 25°C, unless otherwise noted.

Table 4.

Parameter Rating

VDD to GND −0.3 V to +4.6 V
Analog Inputs1 −0.3 V to VDD + 0.3 V
Digital Inputs1

Peak Current, S or D

3.3 V Operation 500 mA

2.5 V Operation 460 mA

1.8 V Operation

Continuous Current, S or D

3.3 V Operation 300 mA

2.5 V Operation 275 mA

1.8 V Operation 250 mA

Operating Temperature Range

Automotive (Y Version) −40°C to +125°C
Storage Temperature Range −65°C to +150°C
Junction Temperature 150°C
MSOP Package

θJA Thermal Impedance 206°C/W

θJC Thermal Impedance 44°C/W
IR Reflow, Peak Temperature

<20 sec

1

Overvoltages at IN, S, or D are clamped by internal diodes. Current should be

limited to the maximum ratings given.

−0.3 V to 4.6 V or 10 mA,
whichever occurs first

420 mA (pulsed at 1 ms, 10%
Duty Cycle Max)

235°C

Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability. Only one absolute maximum rating may be
applied at any one time.

TRUTH TABLE

Table 5.

Logic Switch A Switch B

0 Off On
1 On Off

ESD CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.

Rev. A | Page 6 of 6

ADG836L

PIN TERMINOLOGY

IN1

S1A

GND

S2A

IN2

1

ADG836L

2

TOP VIEW

3

(Not to Scale)

4
5

10

D1

9

S1B

8

V

DD

7

S2B

6

D2

04753-0-002

Figure 2. 10-Lead MSOP (RM-10)

Table 6.

Mnemonic Description

V

DD

I

DD

Most positive power supply potential.

Positive supply current.
GND Ground (0 V) reference.
S Source terminal. May be an input or output.
D Drain terminal. May be an input or output.
IN Logic control input.
VD (VS) Analog voltage on terminals D and S.
R

ON

R

FLAT (ON)

∆R

ON

Ohmic resistance between terminals D and S.

Flatness is defined as the difference between the maximum and minimum value of on resistance as measured

On resistance match between any two channels.
IS (OFF) Source leakage current with the switch off.
ID (OFF) Drain leakage current with the switch off.
ID, IS (ON) Channel leakage current with the switch on.
V

INL

V

INH

I

(I

) Input current of the digital input.

INL

INH

Maximum input voltage for Logic 0.

Minimum input voltage for Logic 1.

CS (OFF) Off switch source capacitance. Measured with reference to ground.
CD (OFF) Off switch drain capacitance. Measured with reference to ground.
CD, CS (ON) On switch capacitance. Measured with reference to ground.
C

IN

t

ON

t

OFF

t

BBM

Digital input capacitance.

Delay time between the 50% and the 90% points of the digital input and switch on condition.

Delay time between the 50% and the 90% points of the digital input and switch off condition.

On or off time measured between the 80% points of both switches when switching from one to another.
Charge Injection A measure of the glitch impulse transferred from the digital input to the analog output during on-off switching.
Off Isolation A measure of unwanted signal coupling through an off switch.
Crosstalk A measure of unwanted signal that is coupled through from one channel to another as a result of parasitic capacitance.

−3 dB Bandwidth The frequency at which the output is attenuated by 3 dB.
On Response The frequency response of the on switch.
Insertion Loss The loss due to the on resistance of the switch.
THD + N The ratio of the harmonic amplitudes plus noise of a signal, to the fundamental.

Rev. A | Page 7 of 16

ADG836L

TYPICAL PERFORMANCE CHARACTERISTICS

0.60
= 25°C

T

A

0.55

0.50

0.45

0.40

0.35

ON RESISTANCE (Ω)

0.30

0.25

0.20

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

V

DD

Figure 3. On Resistance vs. V

0.8
= 25°C

T

A

0.7

0.6

0.5

0.4

ON RESISTANCE (Ω)

0.3

VDD = 2.5V

= 3.6V

= 3V

V

DD

V

, VS (V)

D

(VS), VDD = 2.7 V to 3.6 V

D

VDD = 2.3V

VDD = 2.7V

= 3.3V

V

DD

V

= 2.7V

DD

04449-0-004

1.2
VDD = 3.3V

1.0

0.8

0.6

0.4

ON RESISTANCE (Ω)

0.2

0

0 3.02.52.01.51.00.5

+25°C

Figure 6. On Resistance vs. V

1.2

= 2.5V

V

DD

1.0

0.8

0.6

0.4

ON RESISTANCE (Ω)

0.2

–40°C

Tem per atu re, V

+125°C

+85°C

+25°C

–40°C

V

+125°C

+85°C

, VS (V)

D

(VS) for Different

D

= 3.3 V

DD

04449-0-007

0.2
0 0.5 2.5

Figure 4. On Resistance vs. V

, VS (V)

V

D

(VS), VDD = 2.5 V ± 0.2 V

D

2.01.51.0

1.8

TA = 25°C

1.6

1.4

1.2

VDD = 1.8V

1.0

0.8

ON RESISTANCE (Ω)

0.6

0.4

0.2

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

Figure 5. On Resistance vs. V

VDD = 1.65V

V

= 1.95V

DD

, VS (V)

V

D

(VS), VDD = 1.8 V ± to 0.15 V

D

04449-0-005

04449-0-006

0

0 2.52.01.51.00.5

Figure 7. On Resistance vs. V

V

, VS (V)

D

(VS) for Different

D

04449-0-008

Tem per atu re, VDD = 2.5 V

1.4
VDD = 1.8V

1.2

+125°C

1.0

0.8

0.7

ON RESISTANCE (Ω)

0.5

0.2

0

0 1.80.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

+25°C

+85°C

V

Figure 8. On Resistance vs. V

Tem per atu re, V

–40°C

, VS (V)

D

(VS) for Different

D

= 1.8 V

DD

04449-0-009

Rev. A | Page 8 of 16

ADG836L

80

= 3.3V

V

DD

60

40

20

0

–20

CURRENT (nA)

–40

–60

–80

020 6040 80 100 120

TEMPERATURE (°C)

Figure 9. Leakage Current vs. Temperature, V

60

VDD = 2.5V

50

40

30

20

10

0

CURRENT (nA)

–10

–20

–30

–40

0 12010080604020

TEMPERATURE (°C)

Figure 10. Leakage Current vs. Temperature, V

50

VDD = 1.8V

40

30

20

10

CURRENT (nA)

0

–10

–20

0 12010080604020

Figure 11. Leakage Current vs. Temperature, V

TEMPERATURE (°C)

ID, IS (ON)

I

(OFF)

S

DD

, IS (ON)

I

D

I

(OFF)

S

, ID (ON)

I

S

I

(OFF)

S

= 3.3 V

= 2.5 V

DD

= 1.8 V

DD

04449-0-010

04449-0-011

04449-0-012

90

TA = 25°C

80

70

60

50

(pC)

INJ

40

Q

VCC = 3.3V

30

20

10

0

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

VCC = 2.5V

VCC = 1.8V

(V)

V

S

Figure 12. Charge Injection vs. Source Voltage

35

30

25

20

15

TIME (ns)

10

5

0

t

ON

t

OFF

VDD = 1.8V

VDD = 2.5V

VDD = 3V

VDD = 2.5V

Figure 13. t

VDD = 1.8V

6040020–40 Ð20 80 100 120

TEMPERATURE (°C)

Times vs. Temperature

ON/tOFF

1

0
–1
–2
–3
–4
–5
–6
–7
–8

ATTENUATION (dB)

–9

–10
–11
–12
–13

TA = 25°C

= 3.3V/2.5V/1.8V

V

CC

0.01 0.1 1 10 100 1000
FREQUENCY (MHz)

Figure 14. Bandwidth

04449-0-013

VDD = 3V

04449-0-014

04449-0-015

Rev. A | Page 9 of 16

ADG836L

0

–10

TA = 25°C
VCC = 3.3V/2.5V/1.8V

–20

0.10

0.08

VDD = 2.5V

= 25°C

T

A

S1A–D1
32V LOAD

1.5V p-p

–30

–40

–50

ATTENUATION (dB)

–60

–70

–80

0.01 0.1 1 10 100 1000
FREQUENCY (MHz)

Figure 15. Off Isolation vs. Frequency

–10

–20

–30

–40

–50

–60

–70

ATTENUATION (dB)

–80

–90

–100

TA = 25°C
VCC = 3.3V/2.5V/1.8V

0.01 0.1 1 10 100 1000
FREQUENCY (MHz)

Figure 16. Cross talk vs. Frequency

S1A–S1B

S1A–S2A

04449-0-016

04449-0-017

0.06

0.04

THD + N (%)

0.02

0

20 20k10050 200 1k500 2k 10k5k

FREQUENCY (Hz)

04449-0-018

Figure 17. Total Harmonic Distortion + Noise

Rev. A | Page 10 of 16

ADG836L

V

V

V

TEST CIRCUITS

I

DS

V1

IS (OFF) ID (OFF)

SD

V

S

RON = V1/I

Figure 18. On Resistance

DS

04449-0-019

S

V

DD

0.1µF

V

DD

S1B

V

S

S1A

IN

GND

D

R

L

50Ω

Figure 21. Switching Times, tON, t

SD

A A

Figure 19. Off Leakage

V

C

L

35pF

OUT

V

IN

V

OUT

V

D

OFF

NC

04449-0-020

50% 50%

90% 90%

t

ON

SD

Figure 20. On Leakage

t

OFF

04449-0-022

ID (ON)

A

V

D

04449-0-021

V

DD

0.1µF

V

DD

V

S1B

S

S1A

IN

GND

D

R

L

50Ω

V

C

L

35pF

OUT

0V

V

IN

V

OUT

Figure 22. Break-before-Make Time Delay, t

50% 50%

80%

t

BBM

BBM

80%

t

BBM

04449-0-023

DD

SW ON

V

OUT

IN

V

OUT

∆V

OUT

S1B

S

D

S1A

IN

GND

NC
V

1nF

Figure 23. Charge Injection

Q

INJ

SW OFF

= CL ×∆V

OUT

04449-0-024

Rev. A | Page 11 of 16

ADG836L

V

0.1µF

V

V

DD

0.1µF

DD

V

DD

NC

S1B

OFF ISOLATION = 20 LOG

GND

S1A

D

50Ω

V

OUT

VS

Figure 24. Off Isolation

DD

0.1µF

V

DD

S1AS1B

D

GND

WITH SWITCH

V

INSERTION LOSS = 20 LOG

OUT

V

WITHOUT SWITCH

OUT

Figure 26. Bandwidth

NETWORK

ANALYZER

50Ω

V

OUT

R

L

50Ω

NETWORK

ANALYZER

50Ω

V

V

OUT

R

L

50Ω

V

OUT

V

S

04449-0-025

CHANNEL-TO-CHANNEL CROSSTALK = 20 LOG

R
50Ω

50Ω

V

L

S

Figure 25. Channel-to-Channel Crosstalk (S1A–S1B)

NETWORK
ANALYZER

V

OUT

50Ω

S

50Ω
V

04449-0-026

CHANNEL-TO-CHANNEL CROSSTALK = 20 LOG

S

Figure 27. Channel-to-Channel Crosstalk (S1A–S2A)

S2A
S2B

S1A
S1B

S1A

S1B

V

DD

D

R

L

50Ω

GND

V

OUT

VS

D2

D1

V

OUT

VS

NC

04449-0-027

NC

50Ω

04449-0-028

Rev. A | Page 12 of 16

ADG836L

OUTLINE DIMENSIONS

3.00 BSC

6

10

3.00 BSC

1

PIN 1

0.50 BSC

0.95

0.85

0.75

0.15

0.00

0.27

0.17

COPLANARITY

0.10
COMPLIANT TO JEDEC STANDARDS MO-187BA

Figure 28. 10-Lead Mini Small Outline Package [MSOP]

4.90 BSC

5

1.10 MAX

SEATING
PLANE

0.23

0.08

(RM-10)

Dimensions shown in millimeters

8°
0°

0.80

0.60

0.40

Rev. A | Page 13 of 16

ADG836L

ORDERING GUIDE

Model Temperature Range Package Description Package Option Branding

ADG836LYRM
ADG836LYRM-REEL
ADG836LYRM-REEL7

−40°C to +125°C

−40°C to +125°C

−40°C to +125°C

Mini Small Outline Package (MSOP) RM-10 SQA
Mini Small Outline Package (MSOP) RM-10 SQA
Mini Small Outline Package (MSOP) RM-10 SQA

Rev. A | Page 14 of 16

ADG836L

NOTES

Rev. A | Page 15 of 16

ADG836L

NOTES

© 2004 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.

D04753–0–5/04(A)

Rev. A | Page 16 of 16