Datasheet ADG821 Datasheet (Analog Devices)

<1 Ω CMOS 1.8 V to 5.5 V,

a

FEATURES

0.8  Max On Resistance @125C

0.28  Max On Resistance Flatness @125C

1.8 V to 5.5 V Single Supply
200 mA Current Carrying Capability
Automotive Temperature Range: –40C to +125C
Rail-to-Rail Operation
8-Lead MSOP Package
33 ns Switching Times
Typical Power Consumption (<0.01 W)
TTL/CMOS Compatible Inputs
Pin Compatible with ADG721/722/723

APPLICATIONS
Power Routing
Battery-Powered Systems
Communication Systems
Data Acquisition Systems
Audio and Video Signal Routing
Cellular Phones
Modems
PCMCIA Cards
Hard Drives
Relay Replacement

Dual SPST Switches

ADG821/ADG822/ADG823

FUNCTIONAL BLOCK DIAGRAM

ADG822

IN1

D2

S2

IN2

ADG821

S1

D1

S1

D1

IN2

SWITCHES SHOWN FOR A LOGIC “0”

IN1

D2

S2

ADG823

INPUT

S1

D1

IN2

IN1

D2

S2

GENERAL DESCRIPTION

The ADG821, ADG822, and ADG823 are monolithic CMOS
SPST (single pole, single throw) switches. These switches are
designed on an advanced submicron process that provides low
power dissipation, yet gives high switching speed, low on
resistance, and low leakage currents.

The ADG821, ADG822, and ADG823 are designed to operate
from a single 1.8 V to 5.5 V supply, making them ideal for use
in battery-powered instruments.

Each switch of the ADG821/ADG822/ADG823 conducts equally
well in both directions when on. The ADG821, ADG822, and
ADG823 contain two independent SPST switches.

The ADG821
and ADG822 differ only in that both switches are normally open
and normally closed, respectively. In the ADG823, Switch 1 is
normally open and Switch 2 is normally closed. The ADG823
exhibits break-before-make switching action.

The ADG821, ADG822, and ADG823 are available in an 8-lead
MSOP package.

REV. 0

Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices.

PRODUCT HIGHLIGHTS

1. Very Low On Resistance (0.5 Ω typ)

2. On Resistance Flatness (R

FLAT(ON)

) (0.15 Ω typ)

3. Automotive Temperature Range –40°C to +125°C

4. 200 mA Current Carrying Capability

5. Low Power Dissipation. CMOS construction ensures low
power dissipation.

6. 8-Lead MSOP Package

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone] www.analog.com
Fax: [phone] © Analog Devices, Inc., 2002

ADG821/ADG822/ADG823–SPECIFICATIONS

(VDD = 5 V ± 10%, GND = 0 V. All specifications

1

–40C to +125C, unless otherwise noted.)

–40C to –40C to

Parameter 25C +85C +125C

2

Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to V
On Resistance (R

) 0.5 Ω typ VS = 0 V to VDD, IS = 100 mA;

ON

DD

V

0.6 0.7 0.8 Ω max Test Circuit 1

On Resistance Match Between

Channels (∆R

)0.16 Ω typ VS = 0 V to VDD, IS = 100 mA

ON

0.2 0.25 0.28 Ω max

On Resistance Flatness (R

FLAT(ON)

)0.15 Ω typ VS = 0 V to VDD, IS = 100 mA

0.23 0.26 0.3 Ω max

LEAKAGE CURRENTS V

Source OFF Leakage I

(OFF) ± 0.01 nA typ VS = 4.5 V/1 V, VD = 1 V/4.5 V;

S

DD

± 0.25 ± 3 ± 25 nA max Test Circuit 2

Drain OFF Leakage I

(OFF) ± 0.01 nA typ VS = 4.5 V/1 V, VD = 1 V/4.5 V;

D

± 0.25 ± 3 ± 25 nA max Test Circuit 2

Channel ON Leakage I

, IS (ON) ±0.01 nA typ VS = VD = 1 V, or VS = VD = 4.5 V;

D

± 0.25 ± 3 ± 25 nA max Test Circuit 3

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V

INL

INH

2.0 V min

0.8 V max

Input Current

I

INL

or I

INH

0.005 µA typ VIN = V
± 0.1 µA max

CIN, Digital Input Capacitance 4 pF typ

DYNAMIC CHARACTERISTICS

t

ON

t

OFF

Break-Before-Make Time Delay, t

(ADG823 Only) 1 ns min V

Charge Injection 15 pC typ V

3

33 ns typ RL = 50 Ω, CL = 35 pF,
45 48 52 ns max V

= 3 V; Test Circuit 4

S

11 ns typ RL = 50 Ω, CL = 35 pF,
16 19 21 ns max V
32 ns typ RL = 50 Ω, CL = 35 pF,

BBM

= 3 V; Test Circuit 4

S

= VS2 = 3 V; Test Circuit 5

S1

= 2.5 V; RS = 0 Ω, CL = 1 nF;

S

Test Circuit 6

Off Isolation –52 dB typ R

= 50 Ω, CL = 5 pF,

L

f =1 MHz; Test Circuit 7

Channel-to-Channel Crosstalk –82 dB typ R

= 50 Ω, CL = 5 pF

L

f = 1 MHz; Test Circuit 9

Bandwidth –3 dB 24 MHz typ R

= 50 Ω, CL = 5 pF;

L

Test Circuit 8

(OFF) 85 pF typ f =1 MHz

C

S

C

(OFF) 98 pF typ f =1 MHz

D

CD, CS (ON) 230 pF typ f =1 MHz

POWER REQUIREMENTS V

DD

Digital Inputs = 0 V or 5.5 V

I

DD

0.001 µA typ

1.0 2.0 µA max

NOTES

1

Temperature range: Automotive range: –40°C to +125°C.

2

On resistance parameters tested with IS = 10 mA.

3

Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

= 5.5 V

or V

INL

= 5.5 V

INH

REV. 0–2–

(VDD = 2.7 V to 3.6 V, GND = 0 V. All specifications –40C to +125C, unless otherwise noted.)

1

ADG821/ADG822/ADG823

–40C to – 40C to

Parameter 25C +85C +125C

2

Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to V
On Resistance (R

) 0.7 Ω typ VS = 0 V to VDD, IS = 100 mA;

ON

DD

V

1.4 1.5 1.6 Ω max Test Circuit 1

On Resistance Match Between 0.16 Ω typ

Channels (∆R

On Resistance Flatness (R

LEAKAGE CURRENTS V

Source OFF Leakage I

) 0.2 0.25 0.28 Ω max VS = 0 V to VDD, IS = 100 mA

ON

FLAT(ON)

(OFF) ± 0.01 nA typ VS = 3.3 V/1 V, VD = 1 V/3.3 V;

S

) 0.3 0.33 Ω typ VS = 0 V to VDD, IS = 100 mA

DD

± 0.25 ± 3 ± 15 nA max Test Circuit 2

Drain OFF Leakage I

(OFF) ± 0.01 nA typ VS = 3.3 V/1 V, VD = 1 V/3.3 V;

D

± 0.25 ± 3 ± 25 nA max Test Circuit 2

Channel ON Leakage I

, IS (ON) ± 0.01 nA typ VS = VD = 1 V, or 3.3 V;

D

± 0.25 ± 3 ± 25 nA max Test Circuit 3

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V

INL

INH

2.0 V min

0.8 V max

Input Current

I

INL

or I

INH

0.005 µA typ VIN = V
± 0.1 µA max

CIN, Digital Input Capacitance 4 pF typ

DYNAMIC CHARACTERISTICS

t

ON

t

OFF

Break-Before-Make Time Delay, t

(ADG823 Only) 1 ns min V

Charge Injection ± 2pC typ V

3

48 ns typ RL = 50 Ω, CL = 35 pF,
67 74 78 ns max V

= 1.5 V; Test Circuit 4

S

12 ns typ RL = 50 Ω, CL = 35 pF,
18 20 23 ns max V
40 ns typ RL = 50 Ω, CL = 35 pF,

BBM

= 1.5 V; Test Circuit 4

S

= VS2 = 1.5V; Test Circuit 5

S1

=1.5 V; RS = 0 Ω, CL = 1 nF;

S

Test Circuit 6

Off Isolation –52 dB typ R

= 50 Ω, CL = 5 pF,

L

f = 1 MHz; Test Circuit 7

Channel-to-Channel Crosstalk –82 dB typ R

= 50 Ω, CL = 5 pF,

L

f = 1 MHz; Test Circuit 9

Bandwidth –3 dB 24 MHz typ R

= 50 Ω, CL = 5 pF;

L

Test Circuit 8

(OFF) 85 pF typ f =1 MHz

C

S

(OFF) 98 pF typ f =1 MHz

C

D

CD, CS (ON) 230 pF typ f =1 MHz

POWER REQUIREMENTS V

DD

Digital Inputs = 0 V or 3.6 V

I

DD

0.001 µA typ

1.0 2.0 µA max

NOTES

1

Temperature range: Automotive range: –40°C to +125°C.

2

On resistance parameters tested with IS = 10 mA.

3

Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

= 3.6 V

INL

= 3.6 V

or V

INH

REV. 0

–3–

Spec RIGHT

ADG821/ADG822/ADG823

ABSOLUTE MAXIMUM RATINGS

1

(TA = 25°C, unless otherwise noted.)
V

to GND . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V

DD

Analog Inputs

Digital Inputs

2

. . . . . . . . . . . . . . . . . . . . . . . . . . .

2

. . . . . . . . . . . . . . . . . . –0.3 V to VDD + 0.3 V or

–0.3 V to VDD + 0.3 V or

30 mA, Whichever Occurs First

30 mA, Whichever Occurs First

Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . 400 mA

(Pulsed at 1 ms, 10% Duty Cycle max)

Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . 200 mA

Operating Temperature Range

Automotive . . . . . . . . . . . . . . . . . . . . . . . –40°C to +125°C

Storage Temperature Range . . . . . . . . . . . . –65°C to +150°C

Junction Temperature (T

Package Power Dissipation . . . . . . . . . . . . . . (T

max) . . . . . . . . . . . . . . . . . . . 150°C

j

max – TA)/θ

j

8-Lead MSOP Package

θJAThermal Impedance . . . . . . . . . . . . . . . . . . . . . 206°C/W

Table I. Truth Table for the ADG821/ADG822

ADG821 INx ADG822 INx Switch x Condition

01OFF
10ON

θ

Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . 44°C/W

JC

Lead Temperature, Soldering (10 sec) . . . . . . . . . . . . . 300°C

IR Reflow, Peak Temperature (<20 sec) . . . . . . . . . . . . 235°C

NOTES

1

Stresses above those listed under Absolute Maximum Ratings may cause perma­nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. Only one absolute
maximum rating may be applied at any one time.

2

Overvoltages at IN, S, or D will be clamped by internal diodes. Current should be
limited to the maximum ratings given.

JA

Table II. Truth Table for the ADG823

IN1 IN2 Switch S1 Switch S2

0 0 OFF ON
0 1 OFF OFF
1 0 ON ON
1 1 ON OFF

ORDERING GUIDE

Model Option Temperature Range Brand

*

Package Description Package

ADG821BRM –40°C to +125°C SQB MSOP (microSmall Outline IC) RM-8
ADG822BRM –40°C to +125°C SRB MSOP (microSmall Outline IC) RM-8
ADG823BRM –40°C to +125°C SSB MSOP (microSmall Outline IC) RM-8

*

Branding on MSOP packages is limited to three characters due to space constraints.

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although the

WARNING!

ADG821/ADG822/ADG823 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions
are recommended to avoid performance degradation or loss of functionality.

ESD SENSITIVE DEVICE

REV. 0–4–

ADG821/ADG822/ADG823

PIN CONFIGURATION

8-Lead MSOP

(RM-8)

1

S1

TOP VIEW

(Not to Scale)

2

D1

ADG821/

IN2

3

ADG822/

ADG823

4

TERMINOLOGY

V

DD

Most Positive Power Supply Potential

GND Ground (0 V) Reference

I

DD

Positive Supply Current

S Source Terminal. May be an input or output.

DDrain Terminal. May be an input or output.

IN Logic Control Input

R

ON

∆R

ON

R

FLAT(ON)

Ohmic Resistance between D and S

On Resistance Match between any Two Channels (i.e., R

Flatness is defined as the difference between the maximum and minimum value of on resistance as
measured over the specified analog signal range.

I

(OFF) Source Leakage Current with the Switch OFF

S

I

(OFF) Drain Leakage Current with the Switch OFF

D

I

, IS (ON) Channel Leakage Current with the Switch ON

D

V

)Analog Voltage on Terminals D and S

D (VS

V

INL

V

INH

I

(I

INL

C

C

C

t

ON

t

OFF

t

BBM

) Input Current of the Digital Input

INH

(OFF) OFF Switch Source Capacitance

S

(OFF) OFF Switch Drain Capacitance

D

, CS (ON) ON Switch Capacitance

D

Maximum Input Voltage for Logic “0”

Minimum Input Voltage for Logic “1”

Delay between Applying the Digital Control Input and the Output Switching ON

Delay between Applying the Digital Control Input and the Output Switching OFF

OFF time or ON time measured between the 90% points of both switches, when switching from one
address state to another.

Charge Injection It is a measure of the glitch impulse transferred from the digital input to the analog output during switching.

Crosstalk It is a measure of unwanted signal that is coupled through from one channel to another as a result

of parasitic capacitance.

Off Isolation A Measure of Unwanted Signal Coupling through an OFF Switch

Bandwidth The Frequency at which the Output Is Attenuated by –3 dBs

On Response The Frequency Response of the ON Switch

Insertion Loss The Loss due to the On Resistance of the Switch

V

8

DD

IN1

7

D2

6

S2GND

5

max – R

ON

ON

min)

REV. 0

–5–

ADG821/ADG822/ADG823

–Typical Performance Characteristics

ON RESISTANCE – 

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0

0

VDD = 3.0V

VDD = 3.3V

VDD = 2.7V

VDD = 5.5V

12345

VD (VS) – V

TA = 25C

VDD = 4.5V

VDD = 5.0V

TPC 1. On Resistance vs. VD (VS)

0.8

0.7

0.6

0.5

0.4

0.3

ON RESISTANCE – 

0.2

0.1

0

0

+125C

+85C

+25C

0.5 1.0 1.5 2.0 2.5 3.0

–40C

VDD = 3V

VD (VS) – V

TPC 4. On Resistance vs. VD (VS)
for Different Temperatures

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

ON RESISTANCE – 

1.0

0.5

0

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

5

0

VD (VS) – V

TA = 25C

VDD = 1.8V

TPC 2. On Resistance vs. VD (VS)

0.8
VDD = 5V

0.7

0.6

0.5

0.4

0.3

ON RESISTANCE – 

0.2

–40C

0.1

0

0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

0

+125C

+85C

+25C

VD (VS) – V

TPC 3. On Resistance vs. V

(VS)

D

for Different Temperatures

8

VDD = 5V, 3V

7

6

5

4

3

CURRENT – nA

2

1

0

–1

020 120

40 60 80 100

TEMPERATURE – C

IS, ID (ON)

ID (OFF)

TPC 5. Leakage Currents vs.
Temperature

IS (OFF)

125

200

TA = 25C

150

100

50

V

= 3V

DD

0

–50

–100

CHARGE INJECTION – pC

–150

–200

0 0.5 3.0

1.0 1.5 2.0 2.5

VDD = 5V

Vs – V

TPC 6. Charge Injection vs.
Source Voltage

3.5 4.0 4.5 5.0

60

TA = 25C

ON

VDD = 3V

VDD = 5V

VDD = 3V, 5V

TEMPERATURE – C

vs. Temperature

OFF

50

40

t

30

TIME – ns

20

t

OFF

10

0
–40 –20 0 20 40 60 80 100 1200

TPC 7. tON/t

0

VDD = 3V, 5V

TA = 25C

–10

–20

–30

–40

ATTENUATION – dB

–50

–60

–70

0.2

110

FREQUENCY – MHz

100

TPC 8. Off Isolation vs. Frequency

0

–1

–2

–3

–4

–5

–6

ATTENUATION – dB

–7

VDD = 3V, 5V

–8

TA = 25C

–9

0.1 1 10
FREQUENCY – MHz

100

TPC 9. On Response vs. Frequency

REV. 0–6–

ADG821/ADG822/ADG823

FREQUENCY – Hz

0.045

100

THD – %

20

0.040

0.035

0.030

0.025

0.020

0.015

0.010

0.005

0.050

1K 10K

VS = 5V

RL = 600

V

P-P

= 2V

–10

–20

–30

–40

–50

–60

–70

–80

ATTENUATION – dB

–90

–100

–110

0.1 1 10
FREQUENCY – MHz

TPC 10. Crosstalk vs. Frequency

100

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

LOGIC THRESHOLD VOLTAGE – V

0.4

0

0

VIN RISING

VIN FALLING

1 234 5

VDD – V

TPC 11. Logic Threshold
Voltage vs. Suppply Voltage

6

TPC 12. THD

REV. 0

–7–

ADG821/ADG822/ADG823

Test Circuits

I

DS

V1

SD

V

S

RON = V1/I

DS

IS (OFF) ID (OFF)

SD

A

V

S

(ON)

I

A

V

D

NC

SD

NC = NO CONNECT

D

A

V

D

Test Circuit 1. On Resistance

V

S

V

V

S1 D1

S1

S2

S2

IN1, IN2

V

IN

0.1F

V

DD

V

GND

IN

DD

Test Circuit 2. Off Leakage

V

DD

0.1F

V

DD

SD

GND

Test Circuit 4. Switching Times

D2

R
50

V

OUT2

C

L2

L2



35pF

R

50

Test Circuit 3. On Leakage

t

IN

0V

0V

90%

0V

50% 50%

50% 50%

90% 90%

ON

50% 50%

90%

t

BBM

t

OFF

t

90%

90%

BBM

ADG821

V

IN

V

OUT

C

L

L

35pF

R

C

L1

50

L1



35pF

V

OUT1

V

V

IN

OUT

V

V

OUT1

OUT2

ADG822

V

Test Circuit 5. Break-Before-Make Time Delay, t

V

DD

V

DD

R

S

V

S

SD

IN

GND

C
1nF

V

OUT

L

SW ON

V

IN

V

OUT

Test Circuit 6. Charge Injection

(ADG823 only)

BBM

SW OFF

Q

= CL  ∆V

INJ

OUT

V

OUT

REV. 0–8–

ADG821/ADG822/ADG823

V

DD

0.1F

V

DD

IN

V

IN

S

GND

OFF ISOLATION = 20 LOG

Test Circuit 7. Off Isolation

NETWORK

ANALYZER

V

OUT

R

L

50

50

V

S

V

DD

0.1F

NETWORK

ANALYZER





50

D

V

OUT

V

S

50

V

S

V

OUT

R

L



50

IN

V

IN

V

DD

S

D

GND

INSERTION LOSS = 20 LOG

V

OUT

V

WITHOUT SWITCH

OUT

NETWORK
ANALYZER

50

R

L

50

WITH SWITCH

V

S

V

OUT

Test Circuit 8. Bandwidth

V

DD

0.1F

V

DD

S1

S2

IN

GND

D

R
50



V

CHANNEL-TO-CHANNEL

CROSSTALK = 20

LOG

OUT

V

S

Test Circuit 9. Channel-to-Channel Crosstalk

REV. 0

–9–

ADG821/ADG822/ADG823

OUTLINE DIMENSIONS

8-Lead MSOP Package [MSOP]

(RM-8)

Dimensions shown in millimeters

3.00

BSC

85

3.00
BSC

1

PIN 1

0.65 BSC

0.15

0.00

0.38

0.22

COMPLIANT TO JEDEC STANDARDS MO-187AA

BSC

4

SEATING

PLANE

4.90

1.10 MAX

0.23

0.08

8
0

0.80

0.40

REV. 0–10–

–11–

C02851–0–8/02(0)

–12–

PRINTED IN U.S.A.