Page 1
0.5 CMOS
a
FEATURES
Low On Resistance 0.8 Max at 125C
0.25 Max On Resistance Flatness
1.8 V to 5.5 V Single Supply
200 mA Current Carrying Capability
Automotive Temperature Range: –40C to +125C
Rail-to-Rail Operation
6-Lead SOT-23 Package, 8-Lead SOIC Package, and
6-Bump MicroCSP (Micro Chip Scale Package) ADG819
Fast Switching Times
Typical Power Consumption (<0.01 W)
TTL-/CMOS-Compatible Inputs
Pin Compatible with the ADG719 (ADG819)
APPLICATIONS
Power Routing
Battery-Powered Systems
Communication Systems
Data Acquisition Systems
Cellular Phones
Modems
PCMCIA Cards
Hard Drives
Relay Replacement
1.8 V to 5.5 V 2:1 Mux/SPDT Switches
ADG819/ADG820
FUNCTIONAL BLOCK DIAGRAM
ADG819/
ADG820
S2
S1
IN
SWITCHES SHOWN
FOR A LOGIC “1” INPUT
D
GENERAL DESCRIPTION
The ADG819 and the ADG820 are monolithic, CMOS, SPDT
(single-pole, double-throw) switches. These switches are designed
on a submicron process that provides low power dissipation yet
gives high switching speed, low On resistance, and low leakage
currents.
Low power consumption and an operating supply range of 1.8 V
to 5.5 V make the ADG819 and ADG820 ideal for battery-powered, portable instruments.
Each switch of the ADG819 and the ADG820 conducts equally
well in both directions when on. The ADG819 exhibits breakbefore-make switching action, thus preventing momentary shorting
when switching channels. The ADG820 exhibits make-beforebreak action.
The ADG819 and the ADG820 are available in a 6-lead SOT-23
package and an 8-lead µSOIC package. The ADG819 is also
available in a 2 × 3 bump 1.14 mm × 2.18 mm MicroCSP
package. This chip occupies only a 1.14 mm × 2.18 mm area,
making it the ideal candidate for space-constrained applications.
REV. 0
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices.
PRODUCT HIGHLIGHTS
1. Very low ON resistance, 0.5 Ω typical
2. 1.8 V to 5.5 V single-supply operation
3. High current carrying capability
4. Tiny 6-lead SOT-23 package, 8-lead µSOIC package,
and 2 × 3 bump 1.14 mm × 2.18 mm MicroCSP package
(ADG819 only)
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700www.analog.com
Fax: 781/326-8703 © Analog Devices, Inc., 2002
Page 2
ADG819/ADG820–SPECIFICATIONS
1
(V
= 5 V 10%, GND = 0 V.)
DD
–40C to –40C to
Parameter 25C +85C +125C
2
Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to V
ON Resistance (R
) 0.5 Ω typ VS = 0 V to VDD, IS = 100 mA;
ON
DD
V
0.6 0.7 0.8 Ω max Test Circuit 1
ON Resistance Match Between
Channels (∆R
)0.06 Ω typ VS = 0 V to VDD, IS = 100 mA
ON
0.08 0.1 0.12 Ω max
ON Resistance Flatness (R
FLAT(ON)
) 0.1 Ω typ VS = 0 V to VDD, IS = 100 mA
0.17 0.2 0.25 Ω max
LEAKAGE CURRENTS V
Source OFF Leakage I
(OFF) ± 0.01 nA typ VS = 4.5 V/1 V, VD = 1 V/4.5 V;
S
± 0.25 ± 3 ± 10 nA max Test Circuit 2
Channel ON Leakage I
, IS (ON) ± 0.01 nA typ VS = VD = 1 V, or VS = VD = 4.5 V;
D
± 0.25 ± 3 ± 25 nA max Test Circuit 3
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
INL
INH
2.0 V min
0.8 V max
Input Current
I
INL
or I
INH
0.005 µA typ VIN = V
± 0.1 µA max
C
Digital Input Capacitance 5 pF typ
IN,
DYNAMIC CHARACTERISTICS
3
ADG819
t
ON
35 ns typ RL = 50 Ω, CL = 35 pF,
45 50 55 ns max V
t
OFF
10 ns typ RL = 50 Ω, CL = 35 pF,
16 18 21 ns max V
Break-Before-Make Time Delay, t
BBM
5 ns typ RL = 50 Ω, CL = 35 pF,
1 ns min V
ADG820
t
ON
10 ns typ RL = 50 Ω, CL = 35 pF,
18 20 22 ns max V
t
OFF
26 ns typ RL = 50 Ω, CL = 35 pF,
40 45 50 ns max V
Make-Before-Break Time Delay, t
MBB
15 ns typ RL = 50 Ω, CL = 35 pF,
1 ns min V
Charge Injection 20 pC typ V
Off Isolation –71 dB typ R
Channel-to-Channel Crosstalk –72 dB typ R
Bandwidth –3 dB 17 MHz typ R
(OFF) 80 pF typ f = 1 MHz
C
S
C
(ON) 300 pF typ f = 1 MHz
D, CS
POWER REQUIREMENTS V
I
DD
0.001 µA typ
1.0 2.0 µA max
NOTES
1
Temperature range is as follows: –40°C to +125°C.
2
ON resistance parameters tested with IS = 10 mA.
3
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
= 5.5 V
DD
or V
INL
= 3 V; Test Circuit 4
S
= 3 V; Test Circuit 4
S
= VS2 = 3 V; Test Circuit 5
S1
= 3 V; Test Circuit 4
S
= 3 V; Test Circuit 4
S
= 0 V; Test Circuit 6
S
= 2.5 V, RS = 0 Ω, CL = 1 nF;
S
INH
Test Circuit 7
= 50 Ω, CL = 5 pF, f = 100 kHz;
L
Test Circuit 8
= 50 Ω, CL = 5 pF, f = 100 kHz;
L
Test Circuit 10
= 50 Ω, CL = 5 pF; Test Circuit 9
L
= 5.5 V
DD
Digital Inputs = 0 V or 5.5 V
–2–
REV. 0
Page 3
SPECIFICATIONS
ADG819/ADG820
1
(VDD = 2.7 V to 3.6 V, GND = 0 V.)
–40C to –40C to
Parameter 25C +85C +125C
2
Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to V
ON Resistance (R
) 0.7 Ω typ VS = 0 V to VDD, IS = 100 mA;
ON
DD
V
1.4 1.5 1.6 Ω max Test Circuit 1
ON Resistance Match Between
Channels (∆R
)0.06 Ω typ VS = 0 V to VDD, IS = 100 mA
ON
0.13 0.13 Ω max
ON Resistance Flatness (R
FLAT(ON)
LEAKAGE CURRENTS V
Source OFF Leakage I
(OFF) ± 0.01 nA typ VS = 3.3 V/1 V, VD = 1 V/3.3 V;
S
)0.25 Ω typ VS = 0 V to VDD, IS = 100 mA
= 3.6 V
DD
± 0.25 ± 3 ± 10 nA max Test Circuit 2
Channel ON Leakage I
, IS (ON) ± 0.01 nA typ VS = VD = 1 V, or VS = VD = 3.3 V;
D
± 0.25 ± 3 ± 25 nA max Test Circuit 3
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
INL
INH
2.0 V min
0.8 V max
Input Current
I
INL
or I
INH
0.005 µA typ VIN = V
± 0.1 µA max
C
Digital Input Capacitance 5 pF typ
IN,
DYNAMIC CHARACTERISTICS
3
ADG819
t
ON
t
OFF
Break-Before-Make Time Delay, t
BBM
40 ns typ RL = 50 Ω, CL = 35 pF,
60 65 70 ns max V
= 1.5 V; Test Circuit 4
S
10 ns typ RL = 50 Ω, CL = 35 pF,
16 18 21 ns max V
= 1.5 V; Test Circuit
S
40 ns typ RL = 50 Ω, CL = 35 pF,
1 ns min V
= VS2 = 1.5 V; Test Circuit 5
S1
ADG820
t
ON
t
OFF
Make-Before-Break Time Delay, t
MBB
Charge Injection 10 pC typ V
20 ns typ RL = 50 Ω, CL = 35 pF,
35 40 45 ns max V
= 1.5 V; Test Circuit 4
S
30 ns typ RL = 50 Ω, CL = 35 pF,
45 50 55 ns max V
= 1.5 V; Test Circuit 4
S
10 ns typ RL = 50 Ω, CL = 35 pF,
1 ns min V
= 1.5 V; Test Circuit 6
S
= 1.5 V, RS = 0 Ω, CL = 1 nF;
S
Test Circuit 7
Off Isolation –71 dB typ R
= 50 Ω, CL = 5 pF, f = 100 kHz;
L
Test Circuit 8
Channel-to-Channel Crosstalk –72 dB typ R
= 50 Ω, CL = 5 pF, f = 100 kHz;
L
Test Circuit 10
Bandwidth –3 dB 17 MHz typ R
C
(OFF) 80 pF typ f = 1 MHz
S
= 50 Ω, CL = 5 pF; Test Circuit 9
L
CD, CS (ON) 300 pF typ f = 1 MHz
POWER REQUIREMENTS V
= 3.6 V
DD
Digital Inputs = 0 V or 3.6 V
I
DD
0.001 µA typ
1.0 2.0 µA max
NOTES
1
Temperature range is as follows: –40°C to +125°C.
2
ON resistance parameters tested with IS = 10 mA.
3
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
INL
or V
INH
REV. 0
–3–
Page 4
ADG819/ADG820
ABSOLUTE MAXIMUM RATINGS
1
(TA = 25°C, unless otherwise noted.)
VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V
Analog Inputs
. . . . . . . . . . . . . . . . . . . . . . . 30 mA, Whichever Occurs First
Digital Inputs
2
. . . . . . . . . . . . . . . . . –0.3 V to VDD + 0.3 V or
2
. . . . . . . . . . . . . . . . . –0.3 V to VDD + 0.3 V or
. . . . . . . . . . . . . . . . . . . . . . . 30 mA, Whichever Occurs First
Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . 400 mA
. . . . . . . . . . . . . . . .(Pulsed at 1 ms, 10% Duty Cycle Max)
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . 200 mA
Operating Temperature Range
Industrial . . . . . . . . . . . . . . . . . . . . . . . . . . . –40°C to +85°C
Automotive . . . . . . . . . . . . . . . . . . . . . . . . –40°C to +125°C
Storage Temperature Range . . . . . . . . . . . . –65°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . 150°C
µSOIC Package
Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 206°C/W
JA
Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . 44°C/W
JC
SOT-23 Package (4-Layer Board)
Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 119°C/W
JA
PIN CONFIGURATIONS
6-Lead SOT-23
8-Lead µSOIC
(RT-6)
1
D
2
S1
3
GND
4
V
DD
NC = NO CONNECT
V
GND
IN
DD
1
ADG819/
2
ADG820
TOP VIEW
3
(Not to Scale)
6
S2
D
5
S1
4
MicroCSP Package
Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . . . TBD
JA
Lead Temperature, Soldering (10 sec) . . . . . . . . . . . . 300°C
IR Reflow, Peak Temperature (<20 sec) . . . . . . . . . . . 235°C
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. Only one absolute
maximum rating may be applied at any one time.
2
Overvoltages at IN, S, or D will be clamped by internal diodes. Current should be
limited to the maximum ratings given.
Table I. Truth Table for the ADG819/ADG820
IN Switch S1 Switch S2
0 ON OFF
1 OFF ON
2 3 MicroCSP
(RM-8)
TOP VIEW
(BUMPS AT THE BOTTOM)
NOT TO SCALE
S2 IN
1
6
V
D
DD
2
5
S1
GND
3
4
ADG819 ONLY
ADG819/
ADG820
TOP VIEW
(Not to Scale)
8
S2
NC
7
6
IN
5
NC
ORDERING GUIDE
Model Option Temperature Range Brand1Package Description Package
ADG819BRM –40°C to +125°C SNB µSOIC (MicroSmall Outline IC) RM-8
ADG819BRT –40°C to +125°C SNB SOT-23 (Plastic Surface-Mount) RT-6
ADG819BCB –40°C to +85°C SNB MicroCSP (Micro Chip Scale Package) CB-6
ADG820BRM –40°C to +125°C SPB µSOIC (MicroSmall Outline IC) RM-8
ADG820BRT –40°C to +125°C SPB SOT-23 (Plastic Surface-Mount) RT-6
NOTES
1
Branding on these packages is limited to three characters due to space constraints.
2
Contact factory for availability.
2
2
2
–4–
REV. 0
Page 5
ADG819/ADG820
WARNING!
ESD SENSITIVE DEVICE
TERMINOLOGY
V
DD
GND Ground (0 V) Reference
I
DD
S Source Terminal. May be an input or output.
DDrain Terminal. May be an input or output.
IN Logic Control Input
R
ON
∆R
ON
R
FLAT(ON)
I
(OFF) Source Leakage Current with the Switch OFF
S
I
, IS (ON) Channel Leakage Current with the Switch ON
D
V
)Analog Voltage on Terminals D, S
D (VS
V
INL
V
INH
I
INL(IINH
C
C
t
ON
t
OFF
t
BBM
t
MBB
) Input Current of the Digital Input
(OFF) OFF Switch Source Capacitance
S
, CS (ON) ON Switch Capacitance
D
Charge Injection A measure of the glitch impulse transferred from the digital input to the analog output during switching.
Crosstalk A measure of unwanted signal coupled through from one channel to another as a result of parasitic
OFF Isolation A measure of unwanted signal coupling through an OFF switch.
Bandwidth Frequency at which the output is attenuated by –3 dB.
ON Response Frequency Response of the ON Switch
Insertion Loss Loss due to the ON Resistance of the Switch
Most Positive Power Supply Potential
Positive Supply Current
Ohmic Resistance between D and S
ON Resistance Match between Any Two Channels, i.e., R
max – R
ON
ON
min
Flatness is defined as the difference between the maximum and minimum value of ON resistance as
measured over the specified analog signal range.
Maximum Input Voltage for Logic “0”
Minimum Input Voltage for Logic “1”
Delay between applying the digital control input and the output switching ON.
Delay between applying the digital control input and the output switching OFF.
OFF time or ON time measured between the 90% points of both switches when switching
from one address state to another.
ON time measured between the 80% points of both switches when switching from one
address state to another.
capacitance.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate
on the human body and test equipment and can discharge without detection. Although the ADG819/
ADG820 features proprietary ESD protection circuitry, permanent damage may occur on devices
subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended
to avoid performance degradation or loss of functionality.
REV. 0
–5–
Page 6
ADG819/ADG820
–Typical Performance Characteristics
1.0
= 25C
T
A
0.9
0.8
0.7
V
= 3V
DD
0.6
0.5
V
0.4
ON RESISTANCE –
0.3
0.2
0.1
0
= 3.3V
DD
012345
V
DD
= 2.7V
V
VD, VS – V
DD
= 4.5V
V
= 5V
DD
V
= 5.5V
DD
TPC 1. ON Resistance vs. VD (VS)
10
TA = 25C
9
= 1.8V
V
DD
8
7
6
5
4
ON RESISTANCE –
3
2
1
0
0 0.2 0.6 1.0 1.2 1.6
0.4 0.8 1.4 1.8
VD, VS – V
1.0
V
= 3V
DD
T
= +25C
2.0
A
T
A
= +125C
= –40C
0.8
0.6
0.4
ON RESISTANCE –
0.2
0
0 1.5
0.5 1.0 2.5 3.0
TA = +85C
VD, VS – V
T
A
TPC 4. ON Resistance vs. VD (VS) for Different Temperatures
1.0
V
= 5V
DD
0.8
T
= +125C
A
T
A
TA = +85C
= –40C
VD, VS – V
0.6
0.4
ON RESISTANCE –
0.2
0
03
= +25C
T
A
12 45
TPC 2. ON Resistance vs. VD (VS)
10
VDD = 3V, 5V
8
6
4
2
LEAKAGE CURRENTS – nA
0
–2
060
20 40 100 12080
TEMPERATURE – C
ID, IS (ON)
TPC 3. Leakage Currents vs. Temperatures
IS (OFF)
TPC 5. ON Resistance vs. VD (VS) for Different Temperatures
50
40
t
ON
30
TIME – ns
20
t
OFF
10
0
–40 20
TPC 6. tON/t
= 3V
V
DD
–20 0 80 12040
Times vs. Temperature (ADG819)
OFF
V
DD
V
= 3V, 5V
DD
TEMPERATURE – C
= 5V
60 100
–6–
REV. 0
Page 7
ADG819/ADG820
250
TA = 25C
200
150
100
50
0
–50
CHARGE INJECTION – pC
–100
–150
–200
V
= 3V
DD
0 3.0
1.0 2.0 4.0 5.0
2.50.5 1.5 3.5 4.5
VS – V
V
= 5V
DD
TPC 7. Charge Injection vs. Source Voltage
0
= 5V, 3V
V
DD
= 25C
T
A
–10
–20
–30
–40
–50
–60
ATTENUATION – dB
–70
–80
–90
0.1
FREQUENCY – MHz
1
1
0
–1
–2
–3
ATTENUATION – dB
–4
–5
–6
0.2
1
FREQUENCY – MHz
VDD = 3V, 5V
T
= 25C
A
10
30
TPC 10. ON Response vs. Frequency
1.8
TA = 25C
1.6
1.4
1.2
1.0
0.8
0.6
0.4
LOGIC THRESHOLD VOLTAGE – V
0.2
2
0
0
1
2
3
VDD – V
RISING
FALLING
456
TPC 8. OFF Isolation vs. Frequency
0
–10
–20
–30
–40
–50
–60
ATTENUATION – dB
–70
–80
–90
0.1
FREQUENCY – MHz
TPC 9. Crosstalk vs. Frequency
TPC 11. Logic Threshold vs. Supply Voltage
1
2
REV. 0
–7–
Page 8
ADG819/ADG820
Test Circuits
I
DS
V1
SD
V
S
RON = V1 / I
OS
Test Circuit 1. ON Resistance
V
S
V
S1
V
S2
V
IN
ID (ON)
D
V
D
C
L
35pF
ID (OFF)IS (OFF)
D
V
D
NC
Test Circuit 3. ON Leakage
V
IN
50%
V
OUT
t
ON
90%
50%
t
OFF
S
V
S
Test Circuit 2. OFF Leakage
V
DD
0.1F
V
DD
R
IN
GND
50
L
S
NC = NO CONNECT
90%
Test Circuit 4. Switching Times
V
DD
0.1F
V
DD
S1
S2
IN
GND
D
R
L
50
C
L
35pF
V
OUT
V
IN
V
OUT
50%
0V
90%
0V
t
BBM
90%
50%
t
BBM
Test Circuit 5. Break-Before-Make Time Delay, t
V
DD
0.1F
V
DD
R
V
D
IN
V
IN
GND
R
L2
300
C
L2
35pF
L1
300
V
S2
Test Circuit 6. Make-Before-Break Time Delay, t
–8–
C
L1
35pF
(ADG819 Only)
BBM
V
IN
V
V
S1
S1
V
S2
(ADG820 Only)
MBB
0V
90%
80% V
50%
D
t
MBB
80% V
50%
D
REV. 0
Page 9
ADG819/ADG820
V
DD
V
OUT
V
DD
R
S
V
S
IN
GND
C
1nF
V
OUT
L
V
IN
V
IN
SW OFF
Q
INJ
= CL V
SW ON
SW ON
Test Circuit 7. Charge Injection
V
DD
0.1F
OUT
V
OUT
SW OFF
SW OFFSW OFF
V
DD
IN
V
IN
S
D
GND
50
OFF ISOLATION = 20 LOG
Test Circuit 8. OFF Isolation
V
DD
0.1F
V
DD
IN
S
D
V
IN
GND
INSERTION LOSS = 20 LOG
Test Circuit 9. Bandwidth
NETWORK
ANALYZER
R
50
V
OUT
V
S
NETWORK
ANALYZER
R
50
WITH SWITCH
V
OUT
V
WITHOUT SWITCH
OUT
L
L
50
V
50
V
OUT
OUT
V
S
V
S
REV. 0
V
DD
0.1F
NETWORK
ANALYZER
V
OUT
R
50
50
V
L
IN
S
V
DD
S1
D
S2
R
50
GND
V
CHANNEL-TO-CHANNEL CROSSTALK = 20 LOG
OUT
V
S
Test Circuit 10. Channel-to-Channel Crosstalk
–9–
Page 10
ADG819/ADG820
OUTLINE DIMENSIONS
6-Lead Plastic Surface-Mount Package
(RT-6)
Dimensions shown in inches and (mm)
0.1220 (3.10)
0.1063 (2.70)
0.0709 (1.80)
0.0591 (1.50)
PIN 1
0.0512 (1.30)
0.0354 (0.90)
0.0059 (0.15)
0.0000 (0.00)
COPLANARITY
0.1220 (3.10)
0.1142 (2.90)
0.1220 (3.10)
0.1142 (2.90)
0.1201 (3.05)
0.1118 (2.84)
COPLANARITY
0.0059 (0.15)
0.0020 (0.05)
2
0.0748
(1.90)
BSC
0.0197 (0.50)
0.0098 (0.25)
4 5
0.0374 (0.95)
BSC
0.0571 (1.45)
0.0354 (0.90)
0.1181 (3.00)
0.0984 (2.50)
SEATING
PLANE
6
1 3
8-Lead SOIC Package
(RM-8)
Dimensions shown in inches and (mm)
85
PIN 1
0.0256 (0.65) BSC
0.0181 (0.46)
0.0079 (0.20)
0.1988 (5.05)
0.1870 (4.75)
41
0.0429 (1.09)
0.0370 (0.94)
SEATING
PLANE
0.0110 (0.28)
0.0031 (0.08)
0.0091 (0.23)
0.0031 (0.08)
33
27
10
0
0.0280 (0.71)
0.0161 (0.41)
0.0217 (0.55)
0.0138 (0.35)
0.1201 (3.05)
0.1118 (2.84)
1.34 (0.0528)
1.14 (0.0449)
0.94 (0.0370)
PIN 1
IDENTIFIER
2 × 3 Array for MicroCSP
(CB-6)
Dimensions shown in millimeters and (inches)
0.67 (0.0264)
0.57 (0.0224)
0.44 (0.0173)
0.36 (0.0142)
0.28 (0.0110)
2.38 (0.0937)
2.18 (0.0858)
1.98 (0.0780)
CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS
(IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR
REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN
0.47 (0.0185)
SEATING
PLANE
0.50 (0.0197)
BALL PITCH
0.24 (0.0094)
0.22 (0.0087)
0.20 (0.0079)
0.32 (0.0126)
NOM
COPLANARITY
–10–
0.32 (0.0126)
0.59 (0.0232)
0.50 (0.0860)
REV. 0
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C02801–0–5/02(0)
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PRINTED IN U.S.A.
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