Datasheet ADG811 Datasheet (Analog Devices)

<0.5 Ω CMOS 1.65 V to 3.6 V

FEATURES

0.5 Ω typ on resistance

0.8 Ω max on resistance at 125°C

1.65 V to 3.6 V operation
Automotive temperature range: –40°C to +125°C
High current carrying capability: 300 mA continuous
Rail-to-rail switching operation
Fast switching times: <25 ns
Typical power consumption < 0.1 µW

APPLICATIONS

Cellular phones
MP3 players
Power routing
Battery-powered systems
PCMCIA cards
Modems
Audio and video signal routing
Communications systems

GENERAL DESCRIPTION

The ADG811, ADG812, and ADG813 are low voltage CMOS
devices containing four independently selectable switches.
These switches offer ultralow on resistance of less than 0.8 Ω
over the full temperature range. The digital inputs can handle

1.8 V logic with a 2.7 V to 3.6 V supply.

These devices contain four independent single-pole/single­throw (SPST) switches. The ADG811 and ADG812 differ only
in that the digital control logic is inverted. The ADG811
switches are turned on with a logic low on the appropriate
control input, while a logic high is required to turn on the
switches of the ADG812. The ADG813 contains two switches
whose digital control logic is similar to the ADG811, while the
logic is inverted on the other two switches.

Quad SPST Switches

ADG811/ADG812/ADG813

FUNCTIONAL BLOCK DIAGRAMS

S1

IN1

IN2

ADG811

IN3

IN4

IN1

D1

S2

IN2

D2

S3

D3

S4

D4

SWITCHES SHOWN FOR A LOGIC 1 INPUT

ADG812

IN3

IN4

Figure 1.

PRODUCT HIGHLIGHTS

1. <0.8 Ω over full temperature range of –40°C to +125°C.

2. Single 1.65 V to 3.6 V operation.

3. Operational with 1.8 V CMOS logic.

4. High current handling capability (300 mA continuous

current at 3.3 V).

5. Low THD+N (0.02% typ).

S1

IN1

D1

S2

IN2

D2

S3

D3

S4

D4

ADG813

IN3

IN4

S1

D1

S2

D2

S3

D3

S4

D4

04306-A-001

Each switch conducts equally well in both directions when on
and has an input signal range that extends to the supplies. The
ADG813 exhibits break-before-make switching action.

The ADG811, ADG812, and ADG813 are fully specified for

3.3 V, 2.5 V, and 1.8 V supply operation. They are available in a
16-lead TSSOP package.

Rev. A

Information furnished by Analog Devices is believed to be accurate and reliable.
However, no responsibility is assumed by Analog Devices for its use, nor for any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication
or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone]
Fax: [phone] © 2004 Analog Devices, Inc. All rights reserved.

www.analog.com

ADG811/ADG812/ADG813

TABLE OF CONTENTS

ADG811/ADG812/ADG813—Specifications .............................. 3

Absolute Maximum Ratings............................................................ 6

ESD Caution.................................................................................. 6

Pin Configuration and Function Descriptions............................. 7

REVISION HISTORY

5/04—Data Sheet Changed from Rev. 0 to Rev. A

Updated Format..............................................................Universal

Updated Package Choices..............................................Universal

11/03—Revision 0: Initial Version

Typical Performance Characteristics..............................................8

Test Circuits..................................................................................... 11

Outline Dimensions....................................................................... 13

Ordering Guide .......................................................................... 13

Rev. A | Page 2 of 16

ADG811/ADG812/ADG813

ADG811/ADG812/ADG813—SPECIFICATIONS

Table 1. VDD = 2.7 V to 3.6 V, GND = 0 V, unless otherwise noted1

Parameter +25°C –40°C to +85°C –40°C to +125°C Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to VDD V
On Resistance (RON) 0.5 Ω typ VDD = 2.7 V, VS = 0 V to VDD, IS = 10 mA;

0.65 0.75 0.8 Ω max Figure 18
On Resistance Match between

Channels (∆R

On Resistance Flatness (R

)

ON

) 0.1 Ω typ VDD = 2.7 V, VS = 0 V to VDD, IS = 10 mA

FLAT(ON)

0.15 0.16 Ω max

LEAKAGE CURRENTS VDD = 3.6 V

Source Off Leakage IS (OFF) ±0.2 nA typ VS = 0.6 V/3.3 V, VD = 3.3 V/0.6 V;

±1 ±8 ±80 nA max Figure 19

Drain Off Leakage ID (OFF) ±0.2 nA typ VS = 0.6 V/3.3 V, VD = 3.3 V/0.6 V;

±1 ±8 ±80 nA max Figure 19

Channel On Leakage ID, IS (ON) ±0.2 nA typ VS = VD = 0.6 V or 3.3 V; Figure 20

±1 ±15 ±90 nA max
DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V
Input Current, I

INL

2 V min

INH

0.8 V max

INL

or I

0.005 µA typ VIN = V

INH

±0.1 µA max

CIN, Digital Input Capacitance 6 pF typ

DYNAMIC CHARACTERISTICS2

tON 21 ns typ RL = 50 Ω, CL = 35 pF

25 26 28 ns max VS = 1.5 V/0 V; Figure 21

t

4 ns typ RL = 50 Ω, CL = 35 pF

OFF

5 6 7 ns max VS = 1.5 V; Figure 21

Break-Before-Make Time Delay (t

(ADG813 only) 5 ns min VS1 = VS2 = 1.5 V; Figure 22

Charge Injection 30 pC typ

Off Isolation –67 dB typ

Channel-to-Channel Crosstalk –90 dB typ

Total Harmonic Distortion (THD + N) 0.02 %

Insertion Loss –0.05 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz
–3 dB Bandwidth 90 MHz typ RL = 50 Ω, CL = 5 pF; Figure 25
CS (OFF) 30 pF typ
CD (OFF) 35 pF typ
CD, CS (ON) 60 pF typ

POWER REQUIREMENTS VDD = 3.6 V

IDD 0.003 µA typ Digital inputs = 0 V or 3.6 V

1.0 4 µA max

0.04 Ω typ VDD = 2.7 V, VS = 0.5 V, IS = 10 mA

0.075 0.08 Ω max

or V

INH

INL

) 17 ns typ RL = 50 Ω, CL = 35 pF

BBM

= 1.5 V, RS = 0 Ω, CL = 1 nF;

V

S

Figure 23

= 50 Ω, CL = 5 pF, f = 100 kHz;

R

L

Figure 24

= 50 Ω, CL = 5 pF, f = 100 kHz;

R

L

Figure 26

= 32 Ω, f = 20 Hz to 20 kHz,

R

L

V

= 2 V p-p

S

1

Temperature range for the Y version is –40°C to +125°C.

2

Guaranteed by design, not subject to production test.

Rev. A | Page 3 of 16

ADG811/ADG812/ADG813

Table 2. VDD = 2.5 V ± 0.2 V, GND = 0 V, unless otherwise noted1

Parameter +25°C –40°C to +85°C –40°C to +125°C Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to VDD V
On Resistance (RON) 0.65 Ω typ VDD = 2.3 V, VS = 0 V to VDD, IS = 10 mA;

0.72 0.8 0.88 Ω max Figure 18
On Resistance Match between

Channels (∆R

On Resistance Flatness (R

)

ON

) 0.16 Ω typ VDD = 2.3 V; VS = 0 V to VDD, IS = 10 mA

FLAT(ON)

0.23 0.24 Ω max

LEAKAGE CURRENTS VDD = 2.7 V

Source Off Leakage IS (OFF) ±0.2 nA typ VS = 0.6 V/2.4 V, VD = 2.4 V/0.6 V;

±1 ±6 ±35 nA max Figure 19

Drain Off Leakage ID (OFF) ±0.2 nA typ VS = 0.6 V/2.4 V, VD = 2.4 V/0.6 V;

±1 ±6 ±35 nA max Figure 19

Channel On Leakage ID, IS (ON) ±0.2 nA typ VS = VD = 0.6 V or 2.4 V; Figure 20

±1 ±11 ±70 nA max
DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V
Input Current, I

INL

1.7 V min

INH

0.7 V max

INL

or I

0.005 µA typ VIN = V

INH

±0.1 µA max

CIN, Digital Input Capacitance 6 pF typ

DYNAMIC CHARACTERISTICS2

tON 22 ns typ RL = 50 Ω, CL = 35 pF

27 29 30 ns max VS = 1.5 V/ 0 V; Figure 21

t

4 ns typ RL = 50 Ω, CL = 35 pF

OFF

6 7 8 ns max VS = 1.5 V; Figure 21

Break-Before-Make Time Delay (t

(ADG813 only) 5 ns min VS1 = VS2 = 1.5 V; Figure 22

Charge Injection 25 pC typ

Off Isolation –67 dB typ

Channel-to-Channel Crosstalk –90 dB typ

Total Harmonic Distortion (THD + N) 0.022 %

Insertion Loss –0.06 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz
–3 dB Bandwidth 90 MHz typ RL = 50 Ω, CL = 5 pF; Figure 25
CS (OFF) 32 pF typ
CD (OFF) 37 pF typ
CD, CS (ON) 60 pF typ

POWER REQUIREMENTS VDD = 2.7 V

IDD 0.003 µA typ Digital inputs = 0 V or 2.7 V

1.0 4 µA max

0.04 Ω typ VDD = 2.3 V; VS = 0.55 V, IS = 10 mA

0.08 0.085 Ω max

or V

INH

INL

) 18 ns typ RL = 50 Ω, CL = 35 pF

BBM

= 1.25 V, RS = 0 Ω, CL = 1 nF;

V

S

Figure 23

= 50 Ω, CL = 5 pF, f = 100 kHz;

R

L

Figure 24

= 50 Ω, CL = 5 pF, f = 100 kHz;

R

L

Figure 26

= 32 Ω, f = 20 Hz to 20 kHz,

R

L

V

= 1.5 V p-p

S

1

Temperature range for the Y version is –40°C to +125°C.

2

Guaranteed by design, not subject to production test.

Rev. A | Page 4 of 16

ADG811/ADG812/ADG813

Table 3. VDD = 1.65 V to 1.95 V, GND = 0 V, unless otherwise noted1

Parameter +25°C –40°C to +85°C –40°C to +125°C Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to VDD V
On Resistance (RON) 1 Ω typ VDD = 1.8 V, VS = 0 V to VDD, IS = 10 mA;

1.4 2.2 2.2 Ω max Figure 18

2.5 4 4 Ω max VDD = 1.65 V, VS = 0 V to VDD, IS = 10 mA
On Resistance Match between

Channels (∆R

)

ON

0.1 Ω typ V

LEAKAGE CURRENTS VDD = 1.95 V

Source Off Leakage IS (OFF) ±0.2 nA typ VS = 0.6 V/1.65 V, VD = 1.65 V/0.6 V;

±1 ±5 ±30 nA max Figure 19

Drain Off Leakage ID (OFF) ±0.2 nA typ VS = 0.6 V/1.65 V, VD = 1.65 V/0.6 V;

±1 ±5 ±30 nA max Figure 19

Channel On Leakage ID, IS (ON) ±0.2 nA typ VS = VD = 0.6 V or 1.65 V; Figure 20

±1 ±9 ±60 nA max
DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V
Input Current, I

INL

0.65VDD V min

INH

0.35VDD V max

INL

or I

0.005 µA typ VIN = V

INH

±0.1 µA max

CIN, Digital Input Capacitance 6 pF typ

DYNAMIC CHARACTERISTICS2

tON 27 ns typ RL = 50 Ω, CL = 35 pF

35 36 37 ns max VS = 1.5 V/ 0 V; Figure 21

t

6 ns typ RL = 50 Ω, CL = 35 pF

OFF

8 9 10 ns max VS = 1.5 V; Figure 21

Break-Before-Make Time Delay (t

) 20 ns typ RL = 50 Ω, CL = 35 pF

BBM

(ADG813 only) 5 ns min VS1 = VS2 = 1 V; Figure 22

Charge Injection 15 pC typ

Off Isolation –67 dB typ

Channel-to-Channel Crosstalk –90 dB typ

Total Harmonic Distortion (THD + N) 0.14 %

Insertion Loss –0.08 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz
–3 dB Bandwidth 90 MHz typ RL = 50 Ω, CL = 5 pF; Figure 25
CS (OFF) 32 pF typ
CD (OFF) 38 pF typ
CD, CS (ON) 60 pF typ

POWER REQUIREMENTS VDD = 1.95 V

IDD 0.003 µA typ Digital inputs = 0 V or 1.95 V

1.0 4 µA max

= 1.65 V, VS = 0.7 V, IS = 10 mA

DD

or V

INH

INL

= 1 V, RS = 0 Ω, CL = 1 nF;

V

S

Figure 23

= 50 Ω, CL = 5 pF, f = 100 kHz;

R

L

Figure 24

= 50 Ω, CL = 5 pF, f = 100 kHz;

R

L

Figure 26

= 32 Ω, f = 20 Hz to 20 kHz,

R

L

= 1.2 V p-p

V

S

1

Temperature range for the Y version is –40°C to +125°C.

2

Guaranteed by design, not subject to production test.

Rev. A | Page 5 of 16

ADG811/ADG812/ADG813

ABSOLUTE MAXIMUM RATINGS

Table 4. T

Parameter Rating

VDD to GND –0.3 V to +4.6 V
Analog Inputs1 –0.3 V to VDD + 0.3 V
Digital Inputs1

Peak Current, S or D

3.3 V Operation 500 mA

2.5 V Operation 460 mA

1.8 V Operation 420 mA

Continuous Current, S or D

3.3 V Operation 300 mA

2.5 V Operation 275 mA

1.8 V Operation 250 mA

Operating Temperature Range

Automotive (Y Version)
Storage Temperature Range –65°C to +150°C
Junction Temperature 150°C
TSSOP Package

θJA Thermal Impedance 150°C/W

θJC Thermal Impedance 27°C/W
IR Reflow, Peak Temperature

<20 sec

Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability. Only one absolute maximum rating may be
applied at any one time.

= 25°C, unless otherwise noted

A

GND – 0.3 V to 4.6 V or 10 mA,

whichever occurs first

(Pulsed at 1 ms,
10% Duty Cycle Max)

–40°C to +125°C

235°C

Table 5. ADG811/ADG812 Truth Table

ADG811 IN ADG812 IN Switch Condition

0 1 On
1 0 Off

Table 6. ADG813 Truth Table

Logic Switch 1, Switch 4 Switch 2, Switch 3

0 Off On
1 On Off

1

Overvoltages at IN, S, or D are clamped by internal diodes. Current should be

limited to the maximum ratings given.

ESD CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the
human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.

Rev. A | Page 6 of 16

ADG811/ADG812/ADG813

PIN CONFIGURATION AND FUNCTION DESCRIPTIONS

IN1

D1
S1

NC

GND

S4
D4

IN4

1
2

ADG811/

3

ADG812/

4

ADG813

5
6

(Not to Scale)

7
8

TOP VIEW

IN2

16

D2

15

S2

14
13

VDD
NC

12

S3

11

D3

10

9

IN3

NC = NO CONNECT

04306-A-002

Figure 2.

Table 7. Terminology

Term Definition

V

DD

I

DD

Most positive power supply potential.

Positive supply current.
GND Ground (0 V) reference.
S Source terminal. May be an input or output.
D Drain terminal. May be an input or output.
IN Logic control input.
VD, V
R

ON

R

FLAT (ON)

S

Analog voltage on Terminals D, S.

Ohmic resistance between D and S.

Flatness is defined as the difference between the maximum and minimum value of on resistance as measured over the

specified analog signal range.
∆R

ON

On resistance match between any two channels, i.e., RON max – RON min.
IS (OFF) Source leakage current with the switch off.
ID (OFF) Drain leakage current with the switch off.
ID, IS (ON) Channel leakage current with the switch on.
V

INL

V

INH

I

(I

) Input current of the digital input.

INL

INH

Maximum input voltage for Logic 0.

Minimum input voltage for Logic 1.

CS (OFF) Off switch source capacitance. Measured with reference to ground.
CD (OFF) Off switch drain capacitance. Measured with reference to ground.
CD, CS (ON) On switch capacitance. Measured with reference to ground.
C

IN

t

ON

t

OFF

t

BBM

Digital input capacitance.

Delay time between the 50% and the 90% points of the digital input and switch on condition.

Delay time between the 50% and the 90% points of the digital input and switch off condition.

On or off time measured between the 80% points of both switches, when switching from one to another.
Charge Injection A measure of the glitch impulse transferred from the digital input to the analog output during on-to-off switching.
Off Isolation A measure of unwanted signal coupling through an off switch.
Crosstalk A measure of unwanted signal that is coupled through from one channel to another as a result of parasitic capacitance.
–3 dB Bandwidth The frequency at which the output is attenuated by 3 dB.
On Response The frequency response of the on switch.
Insertion Loss The loss due to the on resistance of the switch.
THD + N The ratio of the harmonic amplitudes plus noise of a signal to the fundamental.

Rev. A | Page 7 of 16

ADG811/ADG812/ADG813

TYPICAL PERFORMANCE CHARACTERISTICS

0.60
TA = 25°C

0.55

0.50

0.45

0.40

0.35

ON RESISTANCE (Ω)

0.30

0.25

V

= 3V

DD

= 3.6V

V

DD

VDD = 2.7V

V

= 3.3V

DD

1.2
VDD = 3.3V

1.0

0.8

+125°C

0.6

0.4

ON RESISTANCE (Ω)

0.2

+25°C

–40°C

+85°C

0.20
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

, VS (V)

V

D

Figure 3. On Resistance vs. V

(VS), VDD = 2.7 V to 3.6 V

D

0.8
T

= 25°C

A

0.7

0.6

0.5

0.4

ON RESISTANCE (Ω)

0.3

0.2

0 0.5 2.52.01.51.0

Figure 4. On Resistance vs. V

V

DD

= 2.5V

VDD = 2.3V

VD, VS (V)

V

= 2.7V

DD

(VS), VDD = 2.5 V ± 0.2 V

D

1.8

TA = 25°C

1.6

1.4

1.2

VDD = 1.8V

1.0

0.8

ON RESISTANCE (Ω)

0.6

0.4

V

V

DD

= 1.65V

DD

= 1.95V

0

0 3.02.52.01.51.00.5

04306-A-003

Figure 6. On Resistance vs. V

VD, VS (V)

(VS) for Different Temperatures, VDD = 3.3 V

D

04306-A-006

1.2
= 2.5V

V

DD

1.0

0.8

0.6

0.4

ON RESISTANCE (Ω)

0.2

0

0 2.52.01.51.00.5

04306-A-004

Figure 7. On Resistance vs. V

+125°C

+85°C

+25°C

–40°C

VD, VS (V)

(VS) for Different Temperatures, VDD = 2.5 V

D

04306-A-007

1.4

VDD = 1.8V

1.2

+125°C

1.0

0.8

0.6

ON RESISTANCE (Ω)

0.4

0.2

+25°C

+85°C

–40°C

0.2
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

VD, VS (V)

Figure 5. On Resistance vs. V

(VS), VDD = 1.8 V ± 0.15 V

D

04306-A-005

Rev. A | Page 8 of 16

0

0 1.80.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

VD, VS (V)

Figure 8. On Resistance vs. V

(VS) for Different Temperatures, VDD = 1.8 V

D

04306-A-008

ADG811/ADG812/ADG813

10

V

= 3.3V

DD

0

–10

–20

–30

–40

CURRENT (nA)

–50

–60

–70

–80

ID (OFF)

TEMPERATURE (°C)

Figure 9. Leakage Currents vs. Temperature, V

10

V

= 2.5V

DD

0

–10

(OFF)

I

–20

–30

CURRENT (nA)

–40

–50

–60

S

TEMPERATURE (°C)

Figure 10. Leakage Currents vs. Temperature, V

0

= 1.8V

V

DD

–10

–20

–30

LEAKAGE (nA)

–40

–50

–60

TEMPERATURE (°C)

Figure 11. Leakage Currents vs. Temperature, V

, IS (ON)

I

D

ID, IS (ON)

IS (OFF)

ID, IS (ON)

(OFF)

I

S

120100806040200 140

= 3.3 V

DD

I

(OFF)

D

120100806040200 140

= 2.5 V

DD

I

(OFF)

D

120100806040200 140

= 1.8 V

DD

04306-A-009

04306-A-010

04306-A-011

120

TA = 25°C

100

80

(pC)

60

INJ

Q

40

20

0

VCC = 2.5V

Figure 12. Charge Injection vs. Source Voltage

35

30

t

ON

25

20

15

TIME (ns)

10

5

0

t

VDD = 2.5V

OFF

Figure 13. t

1

0
–1
–2
–3
–4
–5
–6

ATTENUATION (dB)

–7
–8
–9

–10

TA = 25°C
VCC = 3.3V/2.5V/1.8V

0.01 0.1 1000100101

V

= 3.6V

CC

VCC = 1.8V

VS (V)

= 1.8V

V

CC

VCC = 2.5V

VCC = 3V

VDD = 1.8V

VCC = 3V

TEMPERATURE (°C)

Times vs. Temperature

ON/tOFF

FREQUENCY (MHz)

Figure 14. Bandwidth

2.52.01.0 1.50 0.5 3.0 3.5 4.0

04306-A-012

60 80 100 1204020–20–40 0

04306-A-013

04306-A-014

Rev. A | Page 9 of 16

ADG811/ADG812/ADG813

0

–10

–20

–30

–40

–50

–60

ATTENUATION (dB)

–70

–80

–90

–10

–20

–30

–40

–50

–60

ATTENUATION (dB)

–70

–80

–90

–100

TA = 25°C

VCC = 3.3V/2.5V/1.8V

0.01 0.1 1000100101
FREQUENCY (MHz)

Figure 15. Cross talk vs. Frequency

0

TA = 25°C
VCC = 3.3V/2.5V/1.8V

0.01 0.1 1000100101
FREQUENCY (MHz)

Figure 16. Off Isolation vs. Frequency

0.08
VDD = 2.5V
T

= 25°C

A

32

Ω

LOAD

1.5V p-p

0.06

0.05

THD+N (%)

0.04

0.02

20 50 100 200 500 1k 2k 5k 10k 20k

04306-A-015

FREQUENCY (Hz)

04306-A-017

Figure 17. Total Harmonic Distortion

04306-A-016

Rev. A | Page 10 of 16

ADG811/ADG812/ADG813

V

TEST CIRCUITS

I

DS

V1

IS (OFF) ID (OFF)

SD

V

S

RON = V1/I

DS

04306-A-018

V

S

Figure 18. On Resistance Figure 19. Off Leakage Figure 20. On Leakage

V

DD

0.1µF

V

DD

SD

S

0.1µF

IN

GND

V

DD

R
50Ω

SD

A A

V

OUT

C

L

L

35pF

Figure 21. Switching Times

V

D

ADG811

V

IN

V

IN

ADG812

V

OUT

NC

04306-A-019

50% 50%

50% 50%

90% 90%

t

ON

SD

t

OFF

04306-A-021

ID (ON)

A

V

D

04306-A-020

S1 D1

V

S1

S2

V

S2

IN1, IN2

V

IN

V

DD

50% 50%

80%

t

BBM

80%

t

BBM

04306-A-022

GND

R

C

L1

V

C

L2

35pF

OUT2

50Ω

D2

R

L2

50Ω

L1

35pF

Figure 22. Break-Before-Make Time Delay, t

V

OUT1

V

IN

V

OUT

BBM

0V

(ADG813)

V

DD

V

DD

R

S

V

S

SD

IN

GND

C
1nF

V

OUT

L

SW ON

V

IN

V

OUT

∆V

OUT

Q

INJ

SW OFF

= CL×∆V

OUT

04306-A-023

Figure 23. Charge Injection

Rev. A | Page 11 of 16

ADG811/ADG812/ADG813

G

V

DD

0.1µF

V

DD

S

D

GND

OFF ISOLATION = 20 LOG

50Ω

V

OUT

V

S

NETWORK

ANALYZER

50Ω

V

V

DD

R

L

50Ω

S

04306-A-024

Figure 24. Off Isolation

V

DD

0.1µF

NETWORK

V

S

GND

DD

D

ANALYZER

50Ω

V

V

DD

R

L

50Ω

S

WITH SWITCH

V

INSERTION LOSS = 20 LOG

OUT

V

WITHOUT SWITCH

OUT

04306-A-025

Figure 25. Bandwidth

V

DD

0.1µF

NETWORK

ANALYZER

V

OUT

CHANNEL-TO-CHANNEL CROSSTALK = 20 LO

R
50Ω

50Ω

V

L

S

V

DD

S1

S2

GND

D

R

L

50Ω

V

OUT

V

S

04306-A-026

Figure 26. Channel-to-Channel Crosstalk

Rev. A | Page 12 of 16

ADG811/ADG812/ADG813

OUTLINE DIMENSIONS

5.10

5.00

4.90

0.15

0.05

4.50

4.40

4.30

PIN 1

16

0.65

BSC

COPLANARITY

COMPLIANT TO JEDEC STANDARDS MO-153AB

0.10

0.30

0.19

9

BSC

81

1.20
MAX

SEATING
PLANE

6.40

0.20

0.09
8°

0°

0.75

0.60

0.45

Figure 27. 16-Lead Thin Shrink Small Outline Package [TSSOP]

(RU-16)

Dimensions shown in millimeters

ORDERING GUIDE

Model Temperature Range Package Description Package Option

ADG811YRU –40°C to +125°C Thin Shrink Small Outline (TSSOP) RU-16
ADG811YRU-REEL –40°C to +125°C Thin Shrink Small Outline (TSSOP) RU-16
ADG811YRU-REEL7 –40°C to +125°C Thin Shrink Small Outline (TSSOP) RU-16
AADG812YRU –40°C to +125°C Thin Shrink Small Outline (TSSOP) RU-16
ADG812YRU-REEL –40°C to +125°C Thin Shrink Small Outline (TSSOP) RU-16
ADG812YRU-REEL7 –40°C to +125°C Thin Shrink Small Outline (TSSOP) RU-16
ADG813YRU –40°C to +125°C Thin Shrink Small Outline (TSSOP) RU-16
ADG813YRU-REEL –40°C to +125°C Thin Shrink Small Outline (TSSOP) RU-16
ADG813YRU-REEL7 –40°C to +125°C Thin Shrink Small Outline (TSSOP) RU-16

Rev. A | Page 13 of 16

ADG811/ADG812/ADG813

NOTES

Rev. A | Page 14 of 16

ADG811/ADG812/ADG813

NOTES

Rev. A | Page 15 of 16

ADG811/ADG812/ADG813

NOTES

© 2004 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.

C04306–0–5/04(A)

Rev. A | Page 16 of 16