Datasheet ADG804 Datasheet (Analog Devices)

Page 1
0.5 Ω CMOS 1.65 V TO 3.6 V

FEATURES

0.5 Ω typical on resistance
0.8 Ω maximum on resistance at 125°C
1.65 V to 3.6 V operation Automotive temperature range: –40°C to +125°C High current carrying capability: 300 mA continuous Rail-to-rail switching operation Fast switching times <25 ns Typical power consumption (<0.1 µW)

APPLICATIONS

MP3 players Power routing Battery-powered systems PCMCIA cards Cellular phones Modems Audio and video signal routing Communication systems

GENERAL DESCRIPTION

The ADG804 is a low voltage 4-channel CMOS multiplexer comprising four single channels. This device offers ultralow on resistance of less than 0.8 Ω over the full temperature range. The digital inputs can handle 1.8 V logic with a 2.7 V to 3.6 V supply.
4-Channel Multiplexer
ADG804

FUNCTIONAL BLOCK DIAGRAM

ADG804
2
S1
9
S2 S3
4
S4
7
1 OF 4
DECODER
1105
A0
A1 EN
Figure 1.

PRODUCT HIGHLIGHTS

1. <0.8 Ω over full temperature range of –40°C to +125°C.
2. Single 1.65 V to 3.6 V operation.
3. Operational with 1.8 V CMOS logic.
4. High current handling capability (300 mA continuous
current at 3.3 V).
5. Low THD + N (0.02% typ).
6. Small 10-lead MSOP package.
8
D
04307-0-001
The ADG804 switches one of four inputs to a common output, D, as determined by the 3-bit binary address lines, A0, A1, and EN. A Logic 0 on the EN pin disables the device. The ADG804 has break-before-make switching.
The ADG804 is fully specified for 3.3 V, 2.5 V, and 1.8 V supply operation. It is available in a 10-lead MSOP package.
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 www.analog.com Fax: 781.326.8703 © 2004 Analog Devices, Inc. All rights reserved.
Page 2
ADG804
TABLE OF CONTENTS
Specifications..................................................................................... 3
Typical Performance Characteristics ..............................................8
Absolute Maximum Ratings............................................................ 6
ESD Caution.................................................................................. 6
Pin Configurations ........................................................................... 7
REVISION HISTORY
Revision 0: Initial Version
Test Circuits..................................................................................... 11
Outline Dimensions....................................................................... 13
Ordering Guide .......................................................................... 13
Rev. 0 | Page 2 of 16
Page 3
ADG804

SPECIFICATIONS

VDD = 2.7 V to 3.6 V, GND = 0 V, unless otherwise noted.1
Table 1.
Parameter
ANALOG SWITCH
Analog Signal Range 0 V to VDD V On Resistance (RON) 0.5 typ VDD = 2.7 V; VS = 0 V to VDD, IS = 10 mA; Figure 18
0.65 0.75 0.8 max On Resistance Match between 0.04 Ω typ VDD = 2.7 V; VS = 0.65 V, IS = 10 mA
Channels (∆RON) 0.075 0.08 max
On Resistance Flatness (R
FLAT(ON)
0.15 0.16 max IS = 10 mA LEAKAGE CURRENTS VDD = 3.6 V
Source Off Leakage IS (OFF) ±0.1 nA typ VS = 0.6 V/3.3 V; VD = 3.3 V/0.6 V; Figure 19 ±1 nA max Drain Off Leakage ID (OFF) ±0.1 nA typ VS = 0.6 V/3.3 V; VD = 3.3 V/0.6 V; Figure 19 ±1 nA max
Channel On Leakage ID, IS (ON) ±0.1 nA typ VS = VD = 0.6 V or 3.3 V; Figure 20 ±1 nA max DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
Input Current I
INL
2 V min
INH
0.8 V max
INL
or I
0.005 µA typ VIN = V
INH
±0.1 µA max
CIN, Digital Input Capacitance 4 pF typ DYNAMIC CHARACTERISTICS2
t
TRANSISTION
30 32 35 ns max VS = 1.5 V/0 V; Figure 21
t
ENABLE 23 ns typ RL = 50 Ω, CL = 35 pF
ON
29 30 31 ns max VS = 1.5 V/0 V; Figure 23
t
ENABLE 5 ns typ RL = 50 Ω, CL = 35 pF
OFF
6 7 8 ns max VS = 1.5 V; Figure 23
Break-Before-Make Time Delay
)
(t
BBM
5 ns min VS1 = VS2 = 1.5 V; Figure 22
Charge Injection 28 pC typ VS = 1.5 V, RS = 0 Ω, CL = 1 nF; Figure 24
Off Isolation −67 dB typ RL = 50 Ω, CL = 5 pF,f = 100 kHz; Figure 25
Channel-to-Channel Crosstalk −75 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz; Figure 27
Total Harmonic Distortion (THD+N)
Insertion Loss 0.06 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz
−3 dB Bandwidth 33 MHz typ RL = 50 Ω, CL = 5 pF; Figure 26
CS (OFF) 24 pF typ
CD (OFF) 105 pF typ
CD, CS (ON) 125 pF typ POWER REQUIREMENTS VDD = 3.6 V
IDD 0.003 µA typ Digital inputs = 0 V or 3.6 V
1.0 4 µA max
+25°C
−40°C to +85°C
−40°C to +125°C Unit
Test Conditions/Comments
) 0.1 typ VDD = 2.7 V; VS = 0 V to VDD,
or V
INH
INL
24 ns typ RL = 50 Ω, CL = 35 pF
20 ns typ R
= 50 Ω, CL = 35 pF
L
0.02 % RL = 32 Ω, f = 20 Hz to 20 kHz, VS = 2 V p-p
1
Temperature range, Y version: −40°C to +125°C.
2
Guaranteed by design, not subject to production test.
Rev. 0 | Page 3 of 16
Page 4
ADG804
VDD = 2.5 V ± 0.2 V, GND = 0 V, unless otherwise noted.1
Table 2.
Parameter
ANALOG SWITCH
Analog Signal Range 0 V to VDD V On Resistance (RON) 0.65 typ VDD = 2.3 V; VS = 0 V to VDD, IS = 10 mA; Figure 18
0.77 0.8 0.88 max On Resistance Match between 0.4 Ω typ VDD = 2.3 V; VS = 0.7 V; IS = 10 mA
Channels (∆RON) 0.08 0.085 max
On Resistance Flatness (R
) 0.16 typ VDD = 2.3 V; VS = 0 V to VDD; IS = 10 mA
FLAT(ON)
0.23 0.24 max
LEAKAGE CURRENTS VDD = 2.7 V
Source Off Leakage IS (OFF) ±0.1 nA typ VS = 0.6 V/2.4 V, VD = 2.4 V/0.6 V; Figure 19 ±1 nA max Drain Off Leakage ID (OFF) ±0.1 nA typ VS = 0.6/2.4 V, VD = 2.4/0.6 V; Figure 19 ±1 nA max
Channel On Leakage ID, IS (ON) ±0.1 nA typ VS = VD = 0.6 V or 2.4 V; Figure 20 ±1 nA max DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
Input Current I
INL
1.7 V min
INH
0.7 V max
INL
or I
0.005 µA typ VIN = V
INH
±0.1 µA max
CIN, Digital Input Capacitance 4 pF typ DYNAMIC CHARACTERISTICS2
T
TRANSISTION
31 33 35 ns max VS = 1.5 V/0 V; Figure 21
t
ENABLE 25 ns typ RL = 50 Ω, CL = 35 pF
ON
30 32 34 ns max VS = 1.5 V/0 V; Figure 22
t
ENABLE 5 ns typ RL = 50 Ω, CL = 35 pF
OFF
7 8 9 ns max VS = 1.5 V; Figure 22
Break-Before-Make Time Delay (t
5 ns min VS1 = VS2 = 1.5 V; Figure 22
Charge Injection 20 pC typ VS = 1.25 V, RS = 0 Ω, CL = 1 nF; Figure 24
Off Isolation −67 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz; Figure 25
Channel-to-Channel Crosstalk −75 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz; Figure 27
Total Harmonic Distortion (THD + N) 0.022 % RL = 32 Ω, f = 20 Hz to 20 kHz, VS = 1.5 V p-p
Insertion Loss −0.06 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz
–3 dB Bandwidth 33 MHz typ RL = 50 Ω, CL = 5 pF; Figure 26
CS (OFF) 25 pF typ
CD (OFF) 110 pF typ
CD, CS (ON) 128 pF typ POWER REQUIREMENTS VDD = 2.7 V
IDD 0.003 µA typ Digital inputs = 0 V or 2.7 V 1 4 µA max
+25°C
−40°C to +85°C
−40°C to +125°C
Unit
Test Conditions/Comments
or V
INL
INH
25 ns typ RL = 50 Ω, CL = 35 pF
) 20 ns typ RL = 50 Ω, CL = 35 pF
BBM
_______________________ ________________________________ ___________________
1
Temperature range, Y version: −40°C to +125°C.
2
Guaranteed by design, not subject to production test.
Rev. 0 | Page 4 of 16
Page 5
ADG804
VDD = 1.65 V ± 1.95 V, GND = 0 V, unless otherwise noted.1
Table 3.
Parameter
ANALOG SWITCH
Analog Signal Range 0 V to VDD V On Resistance (RON) 1 typ VDD = 1.8 V; VS = 0 V to VDD, IS = 10 mA
1.4 2.2 2.2 max
2.2 4 4 max
On Resistance Match between Channels
)
(∆R
ON
LEAKAGE CURRENTS VDD = 1.95 V
Source Off Leakage IS (OFF) ±0.1 nA typ VS = 0.6 V/1.65 V, VD = 1.65 V/0.6 V; ±1 nA max Figure 19 Drain Off Leakage ID (OFF) ±0.1 nA typ VS = 0.6/1.65 V, VD = 1.65/0.6 V; ±1 nA max Figure 19
Channel On Leakage ID, IS (ON) ±0.1 nA typ VS = VD = 0.6 V or 1.65 V; Figure 20 ±1 nA max DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
Input Current I
INL
0.65 VDD V min
INH
0.35 VDD V max
INL
or I
0.005 µA typ VIN = V
INH
±0.1 µA max
CIN, Digital Input Capacitance 4 pF typ DYNAMIC CHARACTERISTICS2
t
TRANSISTION
40 42 44 ns max VS = 1.5 V/0 V; Figure 21
t
ENABLE 34 ns typ RL = 50 Ω, CL = 35 pF
ON
39 40 41 ns max VS = 1.5 Ω/0 V; Figure 22
t
ENABLE 8 ns typ RL = 50 Ω, CL = 35 pF
OFF
10 11 13 ns max VS = 1.5 V; Figure 22
Break-Before-Make Time Delay (t
) 22 ns typ RL = 50 Ω, CL = 35 pF
BBM
5 ns min VS1 = VS2 = 1 V; Figure 22
Charge Injection 12 pC typ VS = 1 V, RS = 0 V, CL = 1 nF; Figure 24
Off Isolation −67 dB typ
Channel-to-Channel Crosstalk −75 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz,
Figure 27
Total Harmonic Distortion (THD + N)) 0.14 %
Insertion Loss 0.08 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz
–3 dB Bandwidth 30 MHz typ RL = 50 Ω, CL = 5 pF; Figure 26
CS (OFF) 26 pF typ
CD (OFF) 115 pF typ
CD, CS (ON) 130 pF typ POWER REQUIREMENTS VDD = 1.95 V
IDD 0.003 µA typ Digital inputs = 0 V or 1.95 V
1.0 4 µA max
+25°C
0.1 typ V
−40°C to +85°C
−40°C to +125°C
Unit
Test Conditions/Comments
= 1.65 V, VS = 0 V to VDD,
V
DD
I
= 10 mA; Figure 18
S
= 1.65 V, VS = 0.7 V, IS = 10 mA
DD
or V
INH
INL
32 ns typ RL = 50 Ω, CL = 35 pF
= 50 Ω, CL = 5 pF, f = 100 kHz;
R
L
Figure 25
= 32 Ω, f = 20 Hz to 20 kHz,
R
L
= 1.2 V p-p
V
S
_______________________ ________________________________ _______________________________ _
1
Temperature range, Y version: −40°C to +125°C.
2
Guaranteed by design, not subject to production test.
Rev. 0 | Page 5 of 16
Page 6
ADG804
ABSOLUTE MAXIMUM RATINGS
T
= 25°C, unless otherwise noted.
A
Table 4.
Parameter Rating
VDD to GND −0.3 V to +4.6 V Analog Inputs1 −0.3 V to VDD + 0.3 V Digital Inputs1
Peak Current, S or D
3.3 V Operation 500 mA
2.5 V Operation 460 mA
1.8 V Operation 420 mA
Continuous Current, S or D
3.3 V Operation 300 mA
2.5 V Operation 275 mA
1.8 V Operation 250 mA
Operating Temperature Range
Automotive (Y Version) −40°C to +125°C Storage Temperature Range −65°C to +150°C Junction Temperature 150°C MSOP Package
θJA Thermal Impedance 206°C/W
θJC Thermal Impedance 44°C/W IR Reflow, Peak Temperature
<20 sec
1
Overvoltages at IN, S, or D are clamped by internal diodes. Current should be
limited to the maximum ratings given.
−0.3 V to +4.6 V or 10 mA, whichever occurs first
(Pulsed at 1 ms, 10% Duty Cycle Max)
235°C
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Only one absolute maximum rating may be applied at any one time.
Table 5. ADG804 Truth Table
A1 A0 EN ON Switch
x x 0 None 0 0 1 S1 0 1 1 S2 1 0 1 S3 1 1 1 S4

ESD CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
Rev. 0 | Page 6 of 16
Page 7
ADG804

PIN CONFIGURATION

1
A0 S1
2
GND
3
(Not to Scale)
4
S3
5
EN
NC = NO CONNECT
ADG804
TOP VIEW
A1
10
S2
9
D
8 7
S4
6
V
DD
04307-0-002
Figure 2. 10-Lead MSOP (RM-10)
Table 6. Terminology
VDD Most positive power supply potential. IDD Positive supply current. GND Ground (0 V) reference. S Source terminal. May be an input or an output. D Drain terminal. May be an input or an output. EN Active high logic control input. A0, A1 Logic control inputs. Used to select which source terminal, S1 to S4, is connected to the drain, D. VD, VS Analog voltage on terminals D, S. RON Ohmic resistance between D and S. R
FLAT (ON)
Flatness is defined as the difference between the maximum and minimum value of on resistance as measured over the
specified analog signal range. ∆RON On resistance match between any two channels. IS (OFF) Source leakage current with the switch off. ID (OFF) Drain leakage current with the switch off. ID, IS (ON) Channel leakage current with the switch on. V
Maximum input voltage for Logic 0.
INL
V
Minimum input voltage for Logic 1.
INH
I
(I
) Input current of the digital input.
INL
INH
CS (OFF) Off switch source capacitance. Measured with reference to ground. CD (OFF) Off switch drain capacitance. Measured with reference to ground. CD, CS (ON) On switch capacitance. Measured with reference to ground. CIN Digital input capacitance. tON (EN) Delay time between the 50% and the 90% points of the digital input and switch on condition. t
(EN) Delay time between the 50% and the 90% points of the digital input and switch off condition.
OFF
t
TRANSITION
Delay time between the 50% and the 90% points of the digital input and switch on condition when switching from one
address state to the other. t
On or off time measured between the 80% points of both switches when switching from one to another.
BBM
Charge Injection A measure of the glitch impulse transferred from the digital input to the analog output during on-off switching. Off Isolation A measure of unwanted signal coupling through an off switch. Crosstalk A measure of unwanted signal which is coupled through from one channel to another as a result of parasitic capacitance.
−3 dB Bandwidth The frequency at which the output is attenuated by 3 dB. On Response The frequency response of the on switch. Insertion Loss The loss due to the on resistance of the switch. THD + N The ratio of the harmonic amplitudes plus noise of a signal to the fundamental.
Rev. 0 | Page 7 of 16
Page 8
ADG804

TYPICAL PERFORMANCE CHARACTERISTICS

0.60 TA = 25°C
0.55
0.50
0.45
ON RESISTANCE (Ω)
0.40
0.35
0.30
0.25
0.20
0
V
DD
0.5 1.0 1.5 2.0 2.5
Figure 3. On Resistance vs. V
1.2 = 25°C
T
A
1.0
0.8
VDD = 3V
= 3.6V
V
VDD = 2.7V
VDD = 3.3V
, VS (V)
D
(VS) VDD = 2.7 V to 3.6 V
D
VDD= 2.3V
3.0
04307-0-004
3.5
1.2 VDD = 3.3V
1.0
0.8
0.6
0.4
ON RESISTANCE (Ω)
0.3
0
+25
°C
40
0.5 1.0 1.5 2.0 2.50
Figure 6. On Resistance vs. V
1.2
V
= 2.5V
DD
1.0
0.8
+125°C
+125
°C
+85
°C
°C
V
, VS (V)
D
(VS) for Different Temperature, VDD = 3.3 V
D
3.0
+85°C
04307-0-007
0.6
0.4
ON RESISTANCE (Ω)
0.3
0.2
V
DD
0.5 1.0 1.5 2.0 2.50
Figure 4. On Resistance vs. V
1.8 TA = 25
1.6
1.4
1.2
1.0
0.8
ON RESISTANCE (Ω)
0.6
0.4
0.2
°C
VDD = 1.8V
0.2 1.0 1.2 1.4 1.80
0.4 0.6 0.8 1.6
Figure 5. On Resistance vs. V
= 2.5V
VDD = 2.7V
, VS (V)
V
D
(VS) VDD = 2.5 V ± 0.2 V
D
VDD = 1.65V
V
= 1.95V
DD
V
, VS (V)
D
(VS) VDD = 1.8 ± 0.15 V
D
04307-0-005
04307-0-006
0.6
0.4
ON RESISTANCE (Ω)
0.2
0
+25°C
0.5 1.0 1.5 2.0 2.50
Figure 7. On Resistance vs. V
1.4
VDD = 1.8V
1.2
1.0
0.9
0.7
ON RESISTANCE (Ω)
0.5
0.2
+125°C
+85°C
0
0.2 0.4 0.6 0.8 1.00
Figure 8. On Resistance vs. V
40
°C
V
, VS (V)
D
(VS) for Different Temperature, VDD = 2.5 V
D
+25°C
, VS (V)
V
D
(VS) for Different Temperature, VDD = 1.8 V
D
1.2
40
°C
1.8
1.6
1.4
04307-0-008
04307-0-009
Rev. 0 | Page 8 of 16
Page 9
ADG804
90
80
70
60
50
40
30
CURRENT (nA)
20
10
–10
100
CURRENT (nA)
VDD = 3.3V
ID (OFF)
0
40 600 20 80 100 120
TEMPERATURE (°C)
Figure 9. Leakage Current vs. Temperature, V
VDD = 2.5V
80
60
40
20
ID, IS (ON)
ID, IS(ON)
IS (OFF)
DD
IS(OFF)
= 3.3 V
04307-0-010
90
TA = 25
°C
VDD = 3.6V
VDD = 2.5V
VDD = 1.8V
0 0.5 1.0 1.5 2.0 2.5 3.53.0
(V)
V
S
(pC)
INJ
Q
80
70
60
50
40
30
20
10
0
Figure 12. Charge Injection vs. Source Voltage, V
35
t
30
25
20
15
TIME (ns)
t
10
ENABLE
ON
OFF
V
ENABLE
= 2.5V
DD
VDD = 1.8V
VDD = 1.8V
= 3V
V
DD
= 2.5V
V
DD
= 1.8 V
DD
04307-0-012
0
–20
40 600 20 80 100 120
TEMPERATURE (°C)
Figure 10. Leakage Current vs. Temperature, V
70
VDD = 1.8V
60
50
40
30
20
CURRENT (nA)
10
0
–0
40 600 20 80 100 120
TEMPERATURE (°C)
Figure 11. Leakage Current vs. Temperature, V
5
V
= 3V
ID(OFF)
= 2.5 V
DD
04307-0-011
0
–40 –20 0 20 40 60 80 100 120
Figure 13. t
0
TA = 25
–2
= 3.3V/2.5V/1.8V
V
DD
–4 –6
–8
ID, IS (ON)
ID (OFF)
IS (OFF)
= 1.8 V
DD
04307-0-017
–10 –12
ATTENUATION (dB)
–14 –16 –18
–20
0.03 0.1
DD
TEMPERATURE (
ON/tOFF
°C
FREQUENCY (MHz)
Figure 14. Bandwidth
04307-0-013
°C)
Times vs. Temperature
04307-0-014
1 10 100 300
Rev. 0 | Page 9 of 16
Page 10
ADG804
–10
–20
TA = 25
V
DD
–30
–40
–50
–60
ATTENUATION (dB)
–70
–80
–90
0.03
–10
–20
TA = 25
= 3.3V/2.5V/1.8V
V
DD
–30
–40
–50
–60
ATTENUATION (dB)
–70
°C
= 3.3V/2.5V/1.8V
0.1
1
FREQUENCY (MHz)
10 100 300
Figure 15. Off Isolation vs. Frequency
°C
04307-0-015
0.10 VDD = 2.5V
= 25°C
T
A
S1A – D1
0.08 32 LOAD
1.5V p-p
0.06
0.04
THD + N (%)
0.02
0
20 20k10050 200 1k500 2k 10k5k
FREQUENCY (Hz)
Figure 17. Total Harmonic Distortion + Noise
0430-0-028
–80
–90
0.03
0.1
1
FREQUENCY (MHz)
Figure 16. Cross talk vs. Frequency
10 100 300
04307-0-016
Rev. 0 | Page 10 of 16
Page 11
ADG804
V
V
V

TEST CIRCUITS

I
DS
V1
(OFF)IS (OFF)
I
SD
S
RON = V1/I
Figure 18. On Resistance
V
S
A
V
DS
04307-0-018
S
Figure 19. Off Leakage
DD
0.1µF
V
DD
GND
S1 S2 S3
S4
D
A1
S
+2.4V
A0
EN
R 50
V
S1
V
S4
C
L
L
35pF
Figure 21. Switching Time of Multiplexer, t
V
DD
0.1µF
D
ADDRESS DRIVE (EN)
V
OUT
D
A
V
D
04307-0-019
NC
S
I
(ON)
D
D
A
V
D
04307-0-020
Figure 20. On Leakage
3V
0V
V
OUT
TRANSITION
t
TRANSITION
90%
50%50%
t
TRANSITION
90%
04307-0-021
V
DD
GND
S1 S2 S3
S4
D
A1
S
+2.4V
50
A0
EN
Figure 22. Break-Before-Make Time Delay, t
V
DD
0.1µF
V
DD
GND
S1 S2 S3
S4
D
R 50
L
A1 A0
EN
50
Figure 23. Enable Delay, t
R 50
V
S
0V
V
IN
V
OUT
L
V
C
35pF
L
35pF
ADDRESS DRIVE (V
OUTPUT
ON
IN
(EN), t
S
V
OUT
L
V
OUT
C
80% 80%
BBM
3V
)
0V
V
0
0V
(EN)
OFF
t
BBM
50% 50%
0.9V
0
tON(EN)
t
OFF
50%50%
50%50%
(EN)
t
0.9V
BBM
04307-0-022
0
04307-0-023
Rev. 0 | Page 11 of 16
Page 12
ADG804
V
G
0.1µF
V
DD
V
DD
R
8
V
8
DECODER
GND
A1 A2
EN
C
1nF
V
OUT
L
V
OUT
V
OUT
SW OFF
V
IN
CHARGE INJECTION = V
Q
INJ
= CL× ∆V
SW ON
× C
OUT
OUT
SW OFF
L
04307-0-024
Figure 24. Charge Injection
V
DD
0.1µF
V
DD
OFF ISOLATION = 20 LOG
0.1µF
GND
Sx*
GND
V
DD
S
D
50
V
OUT
V
S
NETWORK
ANALYZER
50
V
V
OUT
R
L
50
S
04307-0-025
Figure 25. Off Isolation
DD
V
DD
D
NETWORK
ANALYZER
50
V
V
OUT
R
L
50
S
NETWORK
ANALYZER
50 V
S
R
L
50
CHANNEL-TO-CHANNEL CROSSTALK = 20 LO
S1
50
S2
Figure 27. Channel-to-Channel Crosstalk
V
GND
V
DD
OUT
V
V
OUT
D
S
04307-0-027
V
WITH SWITCH
OFF ISOLATION = 20 LOG
*UNUSED CHANNELS TERMINATED WITH 50 TO GROUND
OUT
V
WITHOUT SWITCH
OUT
04307-0-026
Figure 26. Bandwidth
Rev. 0 | Page 12 of 16
Page 13
ADG804

OUTLINE DIMENSIONS

3.00 BSC
6
10
3.00 BSC
1
PIN 1
0.50 BSC
0.95
0.85
0.75
0.15
0.00
0.27
0.17
COPLANARITY
0.10 COMPLIANT TO JEDEC STANDARDS MO-187BA
Figure 28. 10-Lead Mini Small Outline Package [MSOP]
4.90 BSC
5
1.10 MAX
SEATING PLANE
0.23
0.08
8° 0°
(RM-10)
Dimensions shown in millimeters
0.80
0.60
0.40

ORDERING GUIDE

Model Temperature Range Package Description Package Option Branding1
ADG804YRM –40°C to +125°C Mini Small Outline Package (MSOP) RM-10 S1A ADG804YRM-REEL –40°C to +125°C Mini Small Outline Package (MSOP) RM-10 S1A ADG804YRM-REEL7 –40°C to +125°C Mini Small Outline Package (MSOP) RM-10 S1A
1
Branding on this package is limited to three characters due to space constraints.
Rev. 0 | Page 13 of 16
Page 14
ADG804
NOTES
Rev. 0 | Page 14 of 16
Page 15
ADG804
NOTES
Rev. 0 | Page 15 of 16
Page 16
ADG804
NOTES
© 2004 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners.
D04307–0–4/04(0)
Rev. 0 | Page 16 of 16
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