1.65 V to 3.6 V operation
Automotive temperature range: –40°C to +125°C
High current carrying capability: 300 mA continuous
Rail-to-rail switching operation
Fast switching times <25 ns
Typical power consumption (<0.1 µW)
APPLICATIONS
MP3 players
Power routing
Battery-powered systems
PCMCIA cards
Cellular phones
Modems
Audio and video signal routing
Communication systems
GENERAL DESCRIPTION
The ADG804 is a low voltage 4-channel CMOS multiplexer
comprising four single channels. This device offers ultralow
on resistance of less than 0.8 Ω over the full temperature range.
The digital inputs can handle 1.8 V logic with a 2.7 V to 3.6 V
supply.
4-Channel Multiplexer
ADG804
FUNCTIONAL BLOCK DIAGRAM
ADG804
2
S1
9
S2
S3
4
S4
7
1 OF 4
DECODER
1105
A0
A1EN
Figure 1.
PRODUCT HIGHLIGHTS
1. <0.8 Ω over full temperature range of –40°C to +125°C.
2. Single 1.65 V to 3.6 V operation.
3. Operational with 1.8 V CMOS logic.
4. High current handling capability (300 mA continuous
current at 3.3 V).
5. Low THD + N (0.02% typ).
6. Small 10-lead MSOP package.
8
D
04307-0-001
The ADG804 switches one of four inputs to a common output,
D, as determined by the 3-bit binary address lines, A0, A1, and
EN. A Logic 0 on the EN pin disables the device. The ADG804
has break-before-make switching.
The ADG804 is fully specified for 3.3 V, 2.5 V, and 1.8 V supply
operation. It is available in a 10-lead MSOP package.
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable.
However, no responsibility is assumed by Analog Devices for its use, nor for any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication
or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
VDD = 2.7 V to 3.6 V, GND = 0 V, unless otherwise noted.1
Table 1.
Parameter
ANALOG SWITCH
Analog Signal Range 0 V to VDD V
On Resistance (RON) 0.5 Ω typ VDD = 2.7 V; VS = 0 V to VDD, IS = 10 mA; Figure 18
0.65 0.75 0.8 Ω max
On Resistance Match between 0.04 Ω typ VDD = 2.7 V; VS = 0.65 V, IS = 10 mA
Channels (∆RON) 0.075 0.08 Ω max
On Resistance Flatness (R
FLAT(ON)
0.15 0.16 Ω max IS = 10 mA
LEAKAGE CURRENTS VDD = 3.6 V
Source Off Leakage IS (OFF) ±0.1 nA typ VS = 0.6 V/3.3 V; VD = 3.3 V/0.6 V; Figure 19
±1 nA max
Drain Off Leakage ID (OFF) ±0.1 nA typ VS = 0.6 V/3.3 V; VD = 3.3 V/0.6 V; Figure 19
±1 nA max
Channel On Leakage ID, IS (ON) ±0.1 nA typ VS = VD = 0.6 V or 3.3 V; Figure 20
±1 nA max
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
Input Current I
INL
2 V min
INH
0.8 V max
INL
or I
0.005 µA typ VIN = V
INH
±0.1 µA max
CIN, Digital Input Capacitance 4 pF typ
DYNAMIC CHARACTERISTICS2
t
TRANSISTION
30 32 35 ns max VS = 1.5 V/0 V; Figure 21
t
ENABLE 23 ns typ RL = 50 Ω, CL = 35 pF
ON
29 30 31 ns max VS = 1.5 V/0 V; Figure 23
t
ENABLE 5 ns typ RL = 50 Ω, CL = 35 pF
OFF
6 7 8 ns max VS = 1.5 V; Figure 23
Break-Before-Make Time Delay
)
(t
BBM
5 ns min VS1 = VS2 = 1.5 V; Figure 22
Charge Injection 28 pC typ VS = 1.5 V, RS = 0 Ω, CL = 1 nF; Figure 24
Off Isolation −67 dB typ RL = 50 Ω, CL = 5 pF,f = 100 kHz; Figure 25
Channel-to-Channel Crosstalk −75 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz; Figure 27
Total Harmonic Distortion (THD+N)
Insertion Loss 0.06 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz
−3 dB Bandwidth 33 MHz typ RL = 50 Ω, CL = 5 pF; Figure 26
CS (OFF) 24 pF typ
CD (OFF) 105 pF typ
CD, CS (ON) 125 pF typ
POWER REQUIREMENTS VDD = 3.6 V
IDD 0.003 µA typ Digital inputs = 0 V or 3.6 V
1.0 4 µA max
+25°C
−40°C to
+85°C
−40°C to
+125°C Unit
Test Conditions/Comments
) 0.1 Ω typ VDD = 2.7 V; VS = 0 V to VDD,
or V
INH
INL
24 ns typ RL = 50 Ω, CL = 35 pF
20 ns typ R
= 50 Ω, CL = 35 pF
L
0.02 % RL = 32 Ω, f = 20 Hz to 20 kHz, VS = 2 V p-p
1
Temperature range, Y version: −40°C to +125°C.
2
Guaranteed by design, not subject to production test.
Analog Signal Range 0 V to VDD V
On Resistance (RON) 0.65 Ω typ VDD = 2.3 V; VS = 0 V to VDD, IS = 10 mA; Figure 18
0.77 0.8 0.88 Ω max
On Resistance Match between 0.4 Ω typ VDD = 2.3 V; VS = 0.7 V; IS = 10 mA
Channels (∆RON) 0.08 0.085 Ω max
On Resistance Flatness (R
) 0.16 Ω typ VDD = 2.3 V; VS = 0 V to VDD; IS = 10 mA
FLAT(ON)
0.23 0.24 Ω max
LEAKAGE CURRENTS VDD = 2.7 V
Source Off Leakage IS (OFF) ±0.1 nA typ VS = 0.6 V/2.4 V, VD = 2.4 V/0.6 V; Figure 19
±1 nA max
Drain Off Leakage ID (OFF) ±0.1 nA typ VS = 0.6/2.4 V, VD = 2.4/0.6 V; Figure 19
±1 nA max
Channel On Leakage ID, IS (ON) ±0.1 nA typ VS = VD = 0.6 V or 2.4 V; Figure 20
±1 nA max
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
Input Current I
INL
1.7 V min
INH
0.7 V max
INL
or I
0.005 µA typ VIN = V
INH
±0.1 µA max
CIN, Digital Input Capacitance 4 pF typ
DYNAMIC CHARACTERISTICS2
T
TRANSISTION
31 33 35 ns max VS = 1.5 V/0 V; Figure 21
t
ENABLE 25 ns typ RL = 50 Ω, CL = 35 pF
ON
30 32 34 ns max VS = 1.5 V/0 V; Figure 22
t
ENABLE 5 ns typ RL = 50 Ω, CL = 35 pF
OFF
7 8 9 ns max VS = 1.5 V; Figure 22
Break-Before-Make Time Delay (t
5 ns min VS1 = VS2 = 1.5 V; Figure 22
Charge Injection 20 pC typ VS = 1.25 V, RS = 0 Ω, CL = 1 nF; Figure 24
Off Isolation −67 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz; Figure 25
Channel-to-Channel Crosstalk −75 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz; Figure 27
Total Harmonic Distortion (THD + N) 0.022 % RL = 32 Ω, f = 20 Hz to 20 kHz, VS = 1.5 V p-p
Insertion Loss −0.06 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz
Analog Signal Range 0 V to VDD V
On Resistance (RON) 1 Ω typ VDD = 1.8 V; VS = 0 V to VDD, IS = 10 mA
1.4 2.2 2.2 Ω max
2.2 4 4 Ω max
On Resistance Match between Channels
)
(∆R
ON
LEAKAGE CURRENTS VDD = 1.95 V
Source Off Leakage IS (OFF) ±0.1 nA typ VS = 0.6 V/1.65 V, VD = 1.65 V/0.6 V;
±1 nA max Figure 19
Drain Off Leakage ID (OFF) ±0.1 nA typ VS = 0.6/1.65 V, VD = 1.65/0.6 V;
±1 nA max Figure 19
Channel On Leakage ID, IS (ON) ±0.1 nA typ VS = VD = 0.6 V or 1.65 V; Figure 20
±1 nA max
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
Input Current I
INL
0.65 VDD V min
INH
0.35 VDD V max
INL
or I
0.005 µA typ VIN = V
INH
±0.1 µA max
CIN, Digital Input Capacitance 4 pF typ
DYNAMIC CHARACTERISTICS2
t
TRANSISTION
40 42 44 ns max VS = 1.5 V/0 V; Figure 21
t
ENABLE 34 ns typ RL = 50 Ω, CL = 35 pF
ON
39 40 41 ns max VS = 1.5 Ω/0 V; Figure 22
t
ENABLE 8 ns typ RL = 50 Ω, CL = 35 pF
OFF
10 11 13 ns max VS = 1.5 V; Figure 22
Break-Before-Make Time Delay (t
) 22 ns typ RL = 50 Ω, CL = 35 pF
BBM
5 ns min VS1 = VS2 = 1 V; Figure 22
Charge Injection 12 pC typ VS = 1 V, RS = 0 V, CL = 1 nF; Figure 24
Off Isolation −67 dB typ
Channel-to-Channel Crosstalk −75 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz,
Figure 27
Total Harmonic Distortion (THD + N)) 0.14 %
Insertion Loss 0.08 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz
–3 dB Bandwidth 30 MHz typ RL = 50 Ω, CL = 5 pF; Figure 26
CS (OFF) 26 pF typ
CD (OFF) 115 pF typ
CD, CS (ON) 130 pF typ
POWER REQUIREMENTS VDD = 1.95 V
Guaranteed by design, not subject to production test.
Rev. 0 | Page 5 of 16
Page 6
ADG804
ABSOLUTE MAXIMUM RATINGS
T
= 25°C, unless otherwise noted.
A
Table 4.
Parameter Rating
VDD to GND −0.3 V to +4.6 V
Analog Inputs1 −0.3 V to VDD + 0.3 V
Digital Inputs1
Peak Current, S or D
3.3 V Operation 500 mA
2.5 V Operation 460 mA
1.8 V Operation 420 mA
Continuous Current, S or D
3.3 V Operation 300 mA
2.5 V Operation 275 mA
1.8 V Operation 250 mA
Operating Temperature Range
Automotive (Y Version) −40°C to +125°C
Storage Temperature Range −65°C to +150°C
Junction Temperature 150°C
MSOP Package
θJA Thermal Impedance 206°C/W
θJC Thermal Impedance 44°C/W
IR Reflow, Peak Temperature
<20 sec
1
Overvoltages at IN, S, or D are clamped by internal diodes. Current should be
limited to the maximum ratings given.
−0.3 V to +4.6 V or 10 mA,
whichever occurs first
(Pulsed at 1 ms, 10% Duty
Cycle Max)
235°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability. Only one absolute maximum rating may be
applied at any one time.
Table 5. ADG804 Truth Table
A1 A0 EN ON Switch
x x 0 None
0 0 1 S1
0 1 1 S2
1 0 1 S3
1 1 1 S4
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the
human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
Rev. 0 | Page 6 of 16
Page 7
ADG804
PIN CONFIGURATION
1
A0
S1
2
GND
3
(Not to Scale)
4
S3
5
EN
NC = NO CONNECT
ADG804
TOP VIEW
A1
10
S2
9
D
8
7
S4
6
V
DD
04307-0-002
Figure 2. 10-Lead MSOP (RM-10)
Table 6. Terminology
VDD Most positive power supply potential.
IDD Positive supply current.
GND Ground (0 V) reference.
S Source terminal. May be an input or an output.
D Drain terminal. May be an input or an output.
EN Active high logic control input.
A0, A1 Logic control inputs. Used to select which source terminal, S1 to S4, is connected to the drain, D.
VD, VS Analog voltage on terminals D, S.
RON Ohmic resistance between D and S.
R
FLAT (ON)
Flatness is defined as the difference between the maximum and minimum value of on resistance as measured over the
specified analog signal range.
∆RON On resistance match between any two channels.
IS (OFF) Source leakage current with the switch off.
ID (OFF) Drain leakage current with the switch off.
ID, IS (ON) Channel leakage current with the switch on.
V
Maximum input voltage for Logic 0.
INL
V
Minimum input voltage for Logic 1.
INH
I
(I
) Input current of the digital input.
INL
INH
CS (OFF) Off switch source capacitance. Measured with reference to ground.
CD (OFF) Off switch drain capacitance. Measured with reference to ground.
CD, CS (ON) On switch capacitance. Measured with reference to ground.
CIN Digital input capacitance.
tON (EN) Delay time between the 50% and the 90% points of the digital input and switch on condition.
t
(EN) Delay time between the 50% and the 90% points of the digital input and switch off condition.
OFF
t
TRANSITION
Delay time between the 50% and the 90% points of the digital input and switch on condition when switching from one
address state to the other.
t
On or off time measured between the 80% points of both switches when switching from one to another.
BBM
Charge Injection A measure of the glitch impulse transferred from the digital input to the analog output during on-off switching.
Off Isolation A measure of unwanted signal coupling through an off switch.
Crosstalk A measure of unwanted signal which is coupled through from one channel to another as a result of parasitic capacitance.
−3 dB Bandwidth The frequency at which the output is attenuated by 3 dB.
On Response The frequency response of the on switch.
Insertion Loss The loss due to the on resistance of the switch.
THD + N The ratio of the harmonic amplitudes plus noise of a signal to the fundamental.
Rev. 0 | Page 7 of 16
Page 8
ADG804
TYPICAL PERFORMANCE CHARACTERISTICS
0.60
TA = 25°C
0.55
0.50
0.45
ON RESISTANCE (Ω)
0.40
0.35
0.30
0.25
0.20
0
V
DD
0.51.01.52.02.5
Figure 3. On Resistance vs. V
1.2
= 25°C
T
A
1.0
0.8
VDD = 3V
= 3.6V
V
VDD = 2.7V
VDD = 3.3V
, VS (V)
D
(VS) VDD = 2.7 V to 3.6 V
D
VDD= 2.3V
3.0
04307-0-004
3.5
1.2
VDD = 3.3V
1.0
0.8
0.6
0.4
ON RESISTANCE (Ω)
0.3
0
+25
°C
–
40
0.51.01.52.02.50
Figure 6. On Resistance vs. V
1.2
V
= 2.5V
DD
1.0
0.8
+125°C
+125
°C
+85
°C
°C
V
, VS (V)
D
(VS) for Different Temperature, VDD = 3.3 V
D
3.0
+85°C
04307-0-007
0.6
0.4
ON RESISTANCE (Ω)
0.3
0.2
V
DD
0.51.01.52.02.50
Figure 4. On Resistance vs. V
1.8
TA = 25
1.6
1.4
1.2
1.0
0.8
ON RESISTANCE (Ω)
0.6
0.4
0.2
°C
VDD = 1.8V
0.21.01.21.41.80
0.40.60.81.6
Figure 5. On Resistance vs. V
= 2.5V
VDD = 2.7V
, VS (V)
V
D
(VS) VDD = 2.5 V ± 0.2 V
D
VDD = 1.65V
V
= 1.95V
DD
V
, VS (V)
D
(VS) VDD = 1.8 ± 0.15 V
D
04307-0-005
04307-0-006
0.6
0.4
ON RESISTANCE (Ω)
0.2
0
+25°C
0.51.01.52.02.50
Figure 7. On Resistance vs. V
1.4
VDD = 1.8V
1.2
1.0
0.9
0.7
ON RESISTANCE (Ω)
0.5
0.2
+125°C
+85°C
0
0.20.40.60.81.00
Figure 8. On Resistance vs. V
–
40
°C
V
, VS (V)
D
(VS) for Different Temperature, VDD = 2.5 V
D
+25°C
, VS (V)
V
D
(VS) for Different Temperature, VDD = 1.8 V
D
1.2
–
40
°C
1.8
1.6
1.4
04307-0-008
04307-0-009
Rev. 0 | Page 8 of 16
Page 9
ADG804
90
80
70
60
50
40
30
CURRENT (nA)
20
10
–10
100
CURRENT (nA)
VDD = 3.3V
ID (OFF)
0
406002080100120
TEMPERATURE (°C)
Figure 9. Leakage Current vs. Temperature, V
VDD = 2.5V
80
60
40
20
ID, IS (ON)
ID, IS(ON)
IS (OFF)
DD
IS(OFF)
= 3.3 V
04307-0-010
90
TA = 25
°C
VDD = 3.6V
VDD = 2.5V
VDD = 1.8V
00.51.01.52.02.53.53.0
(V)
V
S
(pC)
INJ
Q
80
70
60
50
40
30
20
10
0
Figure 12. Charge Injection vs. Source Voltage, V
35
t
30
25
20
15
TIME (ns)
t
10
ENABLE
ON
OFF
V
ENABLE
= 2.5V
DD
VDD = 1.8V
VDD = 1.8V
= 3V
V
DD
= 2.5V
V
DD
= 1.8 V
DD
04307-0-012
0
–20
406002080100120
TEMPERATURE (°C)
Figure 10. Leakage Current vs. Temperature, V
70
VDD = 1.8V
60
50
40
30
20
CURRENT (nA)
10
0
–0
406002080100120
TEMPERATURE (°C)
Figure 11. Leakage Current vs. Temperature, V
5
V
= 3V
ID(OFF)
= 2.5 V
DD
04307-0-011
0
–40–20020406080100120
Figure 13. t
0
TA = 25
–2
= 3.3V/2.5V/1.8V
V
DD
–4
–6
–8
ID, IS (ON)
ID (OFF)
IS (OFF)
= 1.8 V
DD
04307-0-017
–10
–12
ATTENUATION (dB)
–14
–16
–18
–20
0.030.1
DD
TEMPERATURE (
ON/tOFF
°C
FREQUENCY (MHz)
Figure 14. Bandwidth
04307-0-013
°C)
Times vs. Temperature
04307-0-014
110100300
Rev. 0 | Page 9 of 16
Page 10
ADG804
–10
–20
TA = 25
V
DD
–30
–40
–50
–60
ATTENUATION (dB)
–70
–80
–90
0.03
–10
–20
TA = 25
= 3.3V/2.5V/1.8V
V
DD
–30
–40
–50
–60
ATTENUATION (dB)
–70
°C
= 3.3V/2.5V/1.8V
0.1
1
FREQUENCY (MHz)
10100300
Figure 15. Off Isolation vs. Frequency
°C
04307-0-015
0.10
VDD = 2.5V
= 25°C
T
A
S1A – D1
0.08
32Ω LOAD
1.5V p-p
0.06
0.04
THD + N (%)
0.02
0
2020k100502001k5002k10k5k
FREQUENCY (Hz)
Figure 17. Total Harmonic Distortion + Noise
0430-0-028
–80
–90
0.03
0.1
1
FREQUENCY (MHz)
Figure 16. Cross talk vs. Frequency
10100300
04307-0-016
Rev. 0 | Page 10 of 16
Page 11
ADG804
V
V
V
TEST CIRCUITS
I
DS
V1
(OFF)IS (OFF)
I
SD
S
RON = V1/I
Figure 18. On Resistance
V
S
A
V
DS
04307-0-018
S
Figure 19. Off Leakage
DD
0.1µF
V
DD
GND
S1
S2
S3
S4
D
A1
S
+2.4V
A0
EN
R
50Ω
V
S1
V
S4
C
L
L
35pF
Figure 21. Switching Time of Multiplexer, t
V
DD
0.1µF
D
ADDRESS
DRIVE (EN)
V
OUT
D
A
V
D
04307-0-019
NC
S
I
(ON)
D
D
A
V
D
04307-0-020
Figure 20. On Leakage
3V
0V
V
OUT
TRANSITION
t
TRANSITION
90%
50%50%
t
TRANSITION
90%
04307-0-021
V
DD
GND
S1
S2
S3
S4
D
A1
S
+2.4V
50Ω
A0
EN
Figure 22. Break-Before-Make Time Delay, t
V
DD
0.1µF
V
DD
GND
S1
S2
S3
S4
D
R
50Ω
L
A1
A0
EN
50Ω
Figure 23. Enable Delay, t
R
50Ω
V
S
0V
V
IN
V
OUT
L
V
C
35pF
L
35pF
ADDRESS
DRIVE (V
OUTPUT
ON
IN
(EN), t
S
V
OUT
L
V
OUT
C
80%80%
BBM
3V
)
0V
V
0
0V
(EN)
OFF
t
BBM
50%50%
0.9V
0
tON(EN)
t
OFF
50%50%
50%50%
(EN)
t
0.9V
BBM
04307-0-022
0
04307-0-023
Rev. 0 | Page 11 of 16
Page 12
ADG804
V
G
0.1µF
V
DD
V
DD
R
8
V
8
DECODER
GND
A1 A2
EN
C
1nF
V
OUT
L
V
OUT
∆V
OUT
SW OFF
V
IN
CHARGE INJECTION = ∆V
Q
INJ
= CL× ∆V
SW ON
× C
OUT
OUT
SW OFF
L
04307-0-024
Figure 24. Charge Injection
V
DD
0.1µF
V
DD
OFF ISOLATION = 20 LOG
0.1µF
GND
Sx*
GND
V
DD
S
D
50Ω
V
OUT
V
S
NETWORK
ANALYZER
50Ω
V
V
OUT
R
L
50Ω
S
04307-0-025
Figure 25. Off Isolation
DD
V
DD
D
NETWORK
ANALYZER
50Ω
V
V
OUT
R
L
50Ω
S
NETWORK
ANALYZER
50Ω
V
S
R
L
50Ω
CHANNEL-TO-CHANNEL CROSSTALK = 20 LO
S1
50Ω
S2
Figure 27. Channel-to-Channel Crosstalk
V
GND
V
DD
OUT
V
V
OUT
D
S
04307-0-027
V
WITH SWITCH
OFF ISOLATION = 20 LOG
*UNUSED CHANNELS TERMINATED WITH 50Ω TO GROUND
OUT
V
WITHOUT SWITCH
OUT
04307-0-026
Figure 26. Bandwidth
Rev. 0 | Page 12 of 16
Page 13
ADG804
OUTLINE DIMENSIONS
3.00 BSC
6
10
3.00 BSC
1
PIN 1
0.50 BSC
0.95
0.85
0.75
0.15
0.00
0.27
0.17
COPLANARITY
0.10
COMPLIANT TO JEDEC STANDARDS MO-187BA
Figure 28. 10-Lead Mini Small Outline Package [MSOP]
4.90 BSC
5
1.10 MAX
SEATING
PLANE
0.23
0.08
8°
0°
(RM-10)
Dimensions shown in millimeters
0.80
0.60
0.40
ORDERING GUIDE
Model Temperature Range Package Description Package Option Branding1
ADG804YRM –40°C to +125°C Mini Small Outline Package (MSOP) RM-10 S1A
ADG804YRM-REEL –40°C to +125°C Mini Small Outline Package (MSOP) RM-10 S1A
ADG804YRM-REEL7 –40°C to +125°C Mini Small Outline Package (MSOP) RM-10 S1A
1
Branding on this package is limited to three characters due to space constraints.