1.8 V to 5.5 V Single Supply
Automotive Temperature Range –40C to +125C
400 mA Current Carrying Capability
Tiny 6-Lead SOT-23 and 8-Lead SOIC Packages
35 ns Switching Times
Low Power Consumption
TTL/CMOS-Compatible Inputs
Pin Compatible with ADG701/ADG702
APPLICATIONS
Power Routing
Cellular Phones
Modems
PCMCIA Cards
Hard Drives
Data Acquisition Systems
Communication Systems
Relay Replacement
Battery-Powered Systems
SPST Switches
ADG801/ADG802
FUNCTIONAL BLOCK DIAGRAMS
ADG801
S
ADG802
S
SWITCHESSHOWNFORALOGIC “1”INPUT
D
IN
D
IN
GENERAL DESCRIPTION
The ADG801/ADG802 are monolithic CMOS, SPST (Single
Pole, Single Throw) switches with On Resistance of less than 0.4 Ω.
These switches are designed on an advanced submicron
that provides extremely low On Resistance, high switching
speed, and low leakage currents.
The low On Resistance of < 0.4 Ω means these parts are ideal
for applications where low On Resistance switching is critical.
The ADG801 is a normally open (NO) switch, while the ADG802
is normally closed (NC). Each switch conducts equally well in
both directions when On.
The ADG801 and ADG802 are available in 6-lead SOT-23 and
8-lead µSOIC packages.
REV. 0
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices.
IR Reflow, Peak Temperature (<20 seconds) . . . . . . . . 235°C
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute maximum rating conditi ons
for extended periods may affect device reliability. Only one absolute maximum
rating may be applied at any one time.
2
Overvoltages at IN, S, or D will be clamped by internal diodes. Current should be
limited to the maximum ratings given.
Table I. Truth Table
ADG801 InADG802 InSwitch Condition
01OFF
10ON
PIN CONFIGURATIONS
6-Lead Plastic Surface-Mount (SOT-23)
(RT-6)
8-Lead Small Outline SOIC
(RM-8)
1
D
ADG801/
2
NC
ADG802
3
NC
TOP VIEW
(Not to Scale)
4
DD
NC = NO CONNECT
8
S
7
GND
6
IN
5
NCV
ORDERING GUIDE
ModelTemperature RangeBrand
1
Package DescriptionsPackage Options
ADG801BRT–40°C to +125°CSLBSOT-23 (Plastic Surface-Mount)RT-6
ADG801BRM–40°C to +125°CSLBµSOIC (Small Outline)RM-8
ADG802BRT–40°C to +125°CSMBSOT-23 (Plastic Surface-Mount)RT-6
ADG802BRM–40°C to +125°CSMBµSOIC (Small Outline)RM-8
1
Branding on SOT-23 and µSOIC packages is limited to three characters due to space constraints.
2
Contact factory for availability.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although the
ADG801/ADG802 features proprietary ESD protection circuitry, permanent damage may occur on
devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are
recommended to avoid performance degradation or loss of functionality.
2
2
–4–
REV. 0
Page 5
TERMINOLOGY
ADG801/ADG802
V
DD
I
DD
Most Positive Power Supply Potential
Positive Supply Current
GNDGround (0 V) Reference
SSource Terminal. May be an input or output.
DDrain Terminal. May be an input or output.
INLogic Control Input
V
)Analog Voltage on Terminals D and S
D (VS
R
ON
R
FLAT(ON)
Ohmic Resistance Between D and S
The difference between the maximum and minimum value of On Resistance as measured over the specified
analog signal range.
I
(OFF)Source Leakage Current with the Switch OFF
S
I
(OFF)Drain Leakage Current with the Switch OFF
D
I
, IS (ON)Channel Leakage Current with the Switch ON
D
V
INL
V
INH
I
INL (IINH
C
C
C
C
t
ON
t
OFF
)Input Current of the Digital Input
(OFF)OFF Switch Source Capacitance. Measured with reference to ground.
S
(OFF)OFF Switch Drain Capacitance. Measured with reference to ground.
D
, CS (ON)ON Switch Capacitance. Measured with reference to ground.
D
IN
Maximum Input Voltage for Logic “0”
Minimum Input Voltage for Logic “1”
Digital Input Capacitance
Delay between applying the Digital Control Input and the Output Switching ON. See Test Circuit 4.
Delay between applying the Digital Control Input and the Output Switching OFF.
Charge
InjectionA measure of the glitch impulse transferred from the Digital Input to the Analog Output during switching.
Off IsolationA measure of unwanted signal coupling through an OFF switch.
BandwidthThe frequency at which the output is attenuated by 3 dBs.
On ResponseThe frequency response of the ON switch
Insertion
LossThe loss due to the On Resistance of the switch
REV. 0
–5–
Page 6
ADG801/ADG802
–Typical Performance Characteristics
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
ON RESISTANCE –
0.10
0.05
0
01.02.04.03.05.0
VDD = 2.7V
VDD = 3.0V
VDD = 4.5V
V
VDD = 3.3V
(VS) – V
D
TA = 25C
VDD = 5.5V
VDD = 5.0V
TPC 1. On Resistance vs. VD (VS)
3.5
VDD = 5V, 3V
3.0
2.5
2.0
1.5
1.0
CURRENT – nA
0.5
0
–0.5
0
4020
TEMPERATURE – C
IS, I
D (ON)
I
D (OFF)
6080100 120
TPC 4. Leakage Currents vs.
Temperature
I
S (OFF)
5.5
0.50
0.45
0.40
ON RESISTANCE –
0.35
0.30
0.25
0.20
0.15
0.10
0.05
VDD = 5V
0
0
+125C
+25C
–40C
1.51.00.5
2.0 2.5 3.0 3.5 4.0 4.5 5.0
VD (VS) – V
+85C
TPC 2. On Resistance vs. VD (VS)
for Different Temperatures
400
TA = 25C
300
200
100
CHARGE INJECTION – pC
–100
–200
VDD = 3V
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0
TPC 5.
Charge Injection vs.
VS – V
V
= 5V
DD
Source Voltage
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
ON RESISTANCE –
0.10
0.05
TPC 3.
+85C
VDD = 3V
0
0
1.00.5
On Resistance vs.
+25C
–40C
1.52.02.53.0
VD (VS) – V
for Different Temperatures
50
45
t
40
35
30
25
TIME – ns
20
15
t
10
5
0
–40
TPC 6. tON/t
VDD = 3V
ON
OFF
–20 0 20 40 60 80 100 120
VDD = 3V, 5V
TEMPERATURE – C
Times vs. Temperature
OFF
+125C
VD (VS)
VDD = 5V
–10
–20
–30
–40
–50
ATTENUATION – dB
–60
–70
TPC 7.
TA = 25C
= 3V, 5V
V
DD
0.1
110
FREQUENCY – MHz
Off Isolation vs. Frequency
0
–1
–2
–3
–4
–5
–6
ATTENUATION – dB
–7
–8
VDD = 3V, 5V
= 25C
T
A
–9
0.2
120
FREQUENCY – MHz
10
TPC 8. On Response vs. Frequency
–6–
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
LOGIC THRESHOLD VOLTAGE – V
0.2
0
0
VIN RISING
VIN FALLING
21
3456
VDD – V
TPC 9. Logic Threshold Voltage
vs. Supply Voltage
REV. 0
Page 7
Test Circuits
ADG801/ADG802
I
DS
V1
SD
V
S
R
= V1/I
ON
DS
Test Circuit 1. On Resistance
0.1F
V
S
V
S
IN
R
S
Test Circuit 2. Off Leakage
V
DD
V
DD
SD
GND
Test Circuit 4. Switching Times
V
DD
V
DD
SD
IN
GND
I
S
(OFF)
SD
A
V
OUT
R
50
C
L
L
35pF
V
OUT
C
L
1nF
V
OUT
V
V
IN
V
IN
I
D
(OFF)
A
V
D
ADG801
V
IN
V
IN
ADG802
OUT
ADG801
ADG802
50%50%
50%50%
90%90%
t
ON
ON
= CL V
Q
INJ
OUT
I
D
SD
NC
NC = NO CONNECT
(ON)
A
V
D
Test Circuit 3. On Leakage
t
OFF
OFF
V
OUT
REV. 0
Test Circuit 5. Charge Injection
V
DD
0.1F
V
DD
IN
S
50
D
V
IN
GND
OFF ISOLATION = 20 LOG
NETWORK
ANALYZER
50
V
V
OUT
R
L
50
S
IN
V
IN
V
OUT
V
S
Test Circuit 6. Off Isolation
0.1F
V
DD
V
DD
S
D
GND
INSERTION LOSS
= 20
LOG
V
V
OUT
Test Circuit 7. Bandwidth
NETWORK
ANALYZER
50
V
S
V
OUT
R
L
50
WITH SWITCH
OUT
WITHOUT SWITCH
–7–
Page 8
ADG801/ADG802
OUTLINE DIMENSIONS
Dimensions shown in inches and (mm)
0.1220 (3.10)
0.1142 (2.90)
0.1220 (3.10)
0.1142 (2.90)
0.1201 (3.05)
0.1118 (2.84)
COPLANARITY
0.0059 (0.15)
0.0020 (0.05)
85
PIN 1
0.0256 (0.65) BSC
0.0181 (0.46)
0.0079 (0.20)
8-Lead SOIC
(RM-8)
0.1988 (5.05)
0.1870 (4.75)
41
0.0429 (1.09)
0.0370 (0.94)
0.0110 (0.28)
SEATING
PLANE
0.0031 (0.08)
33
27
0.1201 (3.05)
0.1118 (2.84)
0.0280 (0.71)
0.0161 (0.41)
0.0709 (1.80)
0.0591 (1.50)
PIN 1
0.0512 (1.30)
0.0354 (0.90)
0.0059 (0.15)
0.0000 (0.00)
COPLANARITY
0.1220 (3.10)
0.1063 (2.70)
6
1 3
2
0.0748
(1.90)
BSC
0.0197 (0.50)
0.0098 (0.25)
6-Lead SOT-23
(RT-6)
4 5
0.1181 (3.00)
0.0984 (2.50)
0.0374 (0.95)
BSC
0.0571 (1.45)
0.0354 (0.90)
SEATING
PLANE
0.0091 (0.23)
0.0031 (0.08)
10
0
C02800–0–5/02(0)
0.0217 (0.55)
0.0138 (0.35)
–8–
PRINTED IN U.S.A.
REV. 0
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