Datasheet ADG801 Datasheet (Analog Devices)

Page 1
< 0.4 CMOS 1.8 V to 5.5 V,
a
FEATURES
0.4 Max ON Resistance @ 125C
0.08  Max ON Resistance Flatness @ 125C
1.8 V to 5.5 V Single Supply Automotive Temperature Range –40C to +125C 400 mA Current Carrying Capability Tiny 6-Lead SOT-23 and 8-Lead SOIC Packages 35 ns Switching Times Low Power Consumption TTL/CMOS-Compatible Inputs Pin Compatible with ADG701/ADG702
APPLICATIONS Power Routing Cellular Phones Modems PCMCIA Cards Hard Drives Data Acquisition Systems Communication Systems Relay Replacement Battery-Powered Systems
SPST Switches
ADG801/ADG802
FUNCTIONAL BLOCK DIAGRAMS
ADG801
S
ADG802
S
SWITCHES SHOWN FOR A LOGIC “1” INPUT
D
IN
D
IN
GENERAL DESCRIPTION
The ADG801/ADG802 are monolithic CMOS, SPST (Single Pole, Single Throw) switches with On Resistance of less than 0.4 Ω. These switches are designed on an advanced submicron that provides extremely low On Resistance, high switching speed, and low leakage currents.
The low On Resistance of < 0.4 means these parts are ideal for applications where low On Resistance switching is critical.
The ADG801 is a normally open (NO) switch, while the ADG802 is normally closed (NC). Each switch conducts equally well in both directions when On.
The ADG801 and ADG802 are available in 6-lead SOT-23 and 8-lead µSOIC packages.
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process
PRODUCT HIGHLIGHTS
1. Low On Resistance (0.25 Ω typical)
2. 1.8 V to 5.5 V single-supply operation
3. Tiny 6-lead SOT-23 and 8-lead µSOIC packages
4. 400 mA current carrying capability
5. Automotive temperature range –40C to +125C
6. Pin-compatible with ADG701 (ADG801)
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700www.analog.com Fax: 781/326-8703 © Analog Devices, Inc., 2002
Pin-compatible with ADG702 (ADG802)
Page 2
ADG801/ADG802–SPECIFICATIONS
(VDD = 5 V 10%, GND = 0 V. All specifications –40C to +125C,
1
unless otherwise noted.)
–40C to –40C to
Parameter 25C +85C +125C
2
Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to V On Resistance (R
)0.25 Ω typ VS = 0 V to VDD, IS = 100 mA;
ON
DD
V
0.3 0.35 0.4 max Test Circuit 1
On Resistance Flatness (R
FLAT(ON)
)0.05 Ω typ VS = 0 V to VDD, IS = 100 mA
0.07 0.08 Ω max
LEAKAGE CURRENTS V
Source OFF Leakage I
(OFF) ± 0.01 nA typ VS = 4.5 V/1 V, VD = 1 V/4.5 V;
S
DD
± 0.25 ± 3 ±30 nA max Test Circuit 2
Drain OFF Leakage I
(OFF) ± 0.01 nA typ VS = 4.5 V/1 V, VD = 1 V/4.5 V;
D
± 0.25 ± 3 ±30 nA max Test Circuit 2
Channel ON Leakage I
, IS (ON) ± 0.01 nA typ VS = VD = 1 V, or 4.5 V;
D
± 0.25 ± 3 ±30 nA max Test Circuit 3
DIGITAL INPUTS
Input High Voltage, V Input Low Voltage, V
INL
INH
2.0 V min
0.8 V max
Input Current
I
INL
or I
INH
0.005 µA typ VIN = V ± 0.1 µA max
CIN, Digital Input Capacitance 5 pF typ
DYNAMIC CHARACTERISTICS
t
ON
t
OFF
Charge Injection 50 pC typ V
3
35 ns typ RL = 50 , CL = 35 pF 45 50 55 ns max V
= 3 V; Test Circuit 4
S
9ns typ RL = 50 , CL = 35 pF 15 18 21 ns max V
= 3 V; Test Circuit 4
S
= 2.5 V, RS = 0 ; CL = 1 nF;
S
Test Circuit 5
Off Isolation –61 dB typ R
= 50 , CL = 5 pF; f = 100 kHz;
L
Test Circuit 6
Bandwidth –3 dB 12 MHz typ R
(OFF) 180 pF typ f = 1 MHz
C
S
C
(OFF) 180 pF typ f = 1 MHz
D
= 50 , CL = 5 pF; Test Circuit 7
L
CD, CS (ON) 420 pF typ f = 1 MHz
POWER REQUIREMENTS V
I
DD
0.001 µA typ Digital Inputs = 0 V or 5.5 V
= 5.5 V
DD
1.0 2.0 µA max
NOTES
1
Temperature range is as follows: Automotive Temperature Range: –40 °C to +125°C.
2
On Resistance parameters tested with IS = 10 mA.
3
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
= 5.5 V
INL
or V
INH
–2–
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Page 3
ADG801/ADG802
SPECIFICATIONS
Parameter 25C +85C +125C
ANALOG SWITCH
Analog Signal Range 0 V to VDDV On Resistance (R
On Resistance Flatness (R
LEAKAGE CURRENTS V
Source OFF Leakage I
Drain OFF Leakage I
Channel On Leakage I
DIGITAL INPUTS
Input High Voltage, V Input Low Voltage, V Input Current
or I
I
INL
INH
CIN, Digital Input Capacitance 5 pF typ
DYNAMIC CHARACTERISTICS
t
ON
t
OFF
Charge Injection 10 pC typ V
Off Isolation –61 dB typ R
Bandwidth –3 dB 12 MHz typ R C
(OFF) 180 pF typ f = 1 MHz
S
C
(OFF) 180 pF typ f = 1 MHz
D
CD, CS (ON) 420 pF typ f = 1 MHz
POWER REQUIREMENTS V
I
DD
NOTES
1
Temperature range is as follows: Automotive Temperature Range: –40 °C to +125°C.
2
On Resistance parameters tested with IS = 10 mA.
3
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
) 0.4 typ VS = 0 V to VDD, IS = 100 mA;
ON
(OFF) ± 0.01 nA typ VS = 3.3 V/1 V, VD = 1 V/3.3 V;
S
(OFF) ± 0.01 nA typ VS = 3.3 V/1 V, VD = 1 V/3.3 V;
D
, IS (ON) ± 0.01 nA typ VS = VD = 1 V, or 3.3 V;
D
INH
INL
(VDD = 2.7 V to 3.6 V, GND = 0 V. All specifications –40C to +125C,
–40C to –40C to
2
0.6 0.65 0.7 Ω max Test Circuit 1
FLAT(ON)
) 0.1 0.1 0.1 typ VS = 0 V to VDD, IS = 100 mA
± 0.25 ± 3 ±30 nA max Test Circuit 2
± 0.25 ± 3 ±30 nA max Test Circuit 2
± 0.25 ± 3 ±30 nA max Test Circuit 3
2.0 V min
0.8 V max
0.005 µA typ VIN = V ± 0.1 µA max
3
40 ns typ RL = 50 , CL = 35 pF 55 60 65 ns max V 9 ns typ RL = 50 , CL = 35 pF 15 18 21 ns max V
0.001 µA typ Digital Inputs = 0 V or 3.6 V
1.0 2.0 µA max
unless otherwise noted.)
Unit Test Conditions/Comments
DD
= 1.5 V; Test Circuit 4
S
= 1.5 V; Test Circuit 4
S
= 1.5 V, RS = 0 , CL = 1 nF;
S
Test Circuit 5
= 50 , CL = 5 pF, f = 100 kHz,
L
Test Circuit 6
= 50 , CL = 5 pF; Test Circuit 7
L
= 3.6 V
DD
1
= 3.6 V
INL
or V
INH
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–3–
Page 4
ADG801/ADG802
TOP VIEW
(Not to Scale)
6
5
4
1
2
3
NC = NO CONNECT
D
S
GND
V
DD
NC
IN
ADG801/
ADG802
WARNING!
ESD SENSITIVE DEVICE
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise noted.)
VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V
Analog Inputs
Digital Inputs
2
. . . . . . . . . . . . . . . . . . . . –0.3 V to VDD +0.3 V
2
. . . . . . . . . . . . . . . . . . . . –0.3 V to VDD +0.3 V
or 30 mA, Whichever Occurs First
1
or 30 mA, Whichever Occurs First
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . 400 mA
Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . 800 mA
(Pulsed at 1 ms, 10% Duty Cycle Max) Operating Temperature Range Automotive . –40°C to +125°C
Storage Temperature Range . . . . . . . . . . . . –65°C to +150°C
Junction Temperature (T
Package Power Dissipation . . . . . . . . . . . . . . (T
max) . . . . . . . . . . . . . . . . . . . 150°C
J
max – TA)/
J
JA
µSOIC Package
Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 206°C/W
JA
Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . 44°C/W
JC
SOT-23 Package (4-Layer Board)
Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 119°C/W
JA
Lead Temperature, Soldering (10 seconds) . . . . . . . . . . 300°C
IR Reflow, Peak Temperature (<20 seconds) . . . . . . . . 235°C
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditi ons for extended periods may affect device reliability. Only one absolute maximum rating may be applied at any one time.
2
Overvoltages at IN, S, or D will be clamped by internal diodes. Current should be
limited to the maximum ratings given.
Table I. Truth Table
ADG801 In ADG802 In Switch Condition
01OFF 10ON
PIN CONFIGURATIONS
6-Lead Plastic Surface-Mount (SOT-23)
(RT-6)
8-Lead Small Outline SOIC
(RM-8)
1
D
ADG801/
2
NC
ADG802
3
NC
TOP VIEW
(Not to Scale)
4
DD
NC = NO CONNECT
8
S
7
GND
6
IN
5
NCV
ORDERING GUIDE
Model Temperature Range Brand
1
Package Descriptions Package Options
ADG801BRT –40°C to +125°C SLB SOT-23 (Plastic Surface-Mount) RT-6 ADG801BRM –40°C to +125°C SLB µSOIC (Small Outline) RM-8 ADG802BRT –40°C to +125°C SMB SOT-23 (Plastic Surface-Mount) RT-6 ADG802BRM –40°C to +125°C SMB µSOIC (Small Outline) RM-8
1
Branding on SOT-23 and µSOIC packages is limited to three characters due to space constraints.
2
Contact factory for availability.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the ADG801/ADG802 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
2
2
–4–
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TERMINOLOGY
ADG801/ADG802
V
DD
I
DD
Most Positive Power Supply Potential
Positive Supply Current
GND Ground (0 V) Reference
S Source Terminal. May be an input or output.
DDrain Terminal. May be an input or output.
IN Logic Control Input
V
)Analog Voltage on Terminals D and S
D (VS
R
ON
R
FLAT(ON)
Ohmic Resistance Between D and S
The difference between the maximum and minimum value of On Resistance as measured over the specified analog signal range.
I
(OFF) Source Leakage Current with the Switch OFF
S
I
(OFF) Drain Leakage Current with the Switch OFF
D
I
, IS (ON) Channel Leakage Current with the Switch ON
D
V
INL
V
INH
I
INL (IINH
C
C
C
C
t
ON
t
OFF
) Input Current of the Digital Input
(OFF) OFF Switch Source Capacitance. Measured with reference to ground.
S
(OFF) OFF Switch Drain Capacitance. Measured with reference to ground.
D
, CS (ON) ON Switch Capacitance. Measured with reference to ground.
D
IN
Maximum Input Voltage for Logic “0”
Minimum Input Voltage for Logic “1”
Digital Input Capacitance
Delay between applying the Digital Control Input and the Output Switching ON. See Test Circuit 4.
Delay between applying the Digital Control Input and the Output Switching OFF.
Charge Injection A measure of the glitch impulse transferred from the Digital Input to the Analog Output during switching.
Off Isolation A measure of unwanted signal coupling through an OFF switch.
Bandwidth The frequency at which the output is attenuated by 3 dBs.
On Response The frequency response of the ON switch
Insertion Loss The loss due to the On Resistance of the switch
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–5–
Page 6
ADG801/ADG802
–Typical Performance Characteristics
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
ON RESISTANCE –
0.10
0.05
0
0 1.0 2.0 4.03.0 5.0
VDD = 2.7V
VDD = 3.0V
VDD = 4.5V
V
VDD = 3.3V
(VS) – V
D
TA = 25C
VDD = 5.5V
VDD = 5.0V
TPC 1. On Resistance vs. VD (VS)
3.5 VDD = 5V, 3V
3.0
2.5
2.0
1.5
1.0
CURRENT – nA
0.5
0
–0.5
0
4020
TEMPERATURE – C
IS, I
D (ON)
I
D (OFF)
60 80 100 120
TPC 4. Leakage Currents vs.
Temperature
I
S (OFF)
5.5
0.50
0.45
0.40
ON RESISTANCE –
0.35
0.30
0.25
0.20
0.15
0.10
0.05 VDD = 5V
0
0
+125C
+25C
–40C
1.51.00.5
2.0 2.5 3.0 3.5 4.0 4.5 5.0 VD (VS) – V
+85C
TPC 2. On Resistance vs. VD (VS) for Different Temperatures
400
TA = 25C
300
200
100
CHARGE INJECTION – pC
–100
–200
VDD = 3V
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0
TPC 5.
Charge Injection vs.
VS – V
V
= 5V
DD
Source Voltage
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
ON RESISTANCE –
0.10
0.05
TPC 3.
+85C
VDD = 3V
0
0
1.00.5
On Resistance vs.
+25C
–40C
1.5 2.0 2.5 3.0
VD (VS) – V
for Different Temperatures
50
45
t
40
35
30
25
TIME – ns
20
15
t
10
5
0 –40
TPC 6. tON/t
VDD = 3V
ON
OFF
–20 0 20 40 60 80 100 120
VDD = 3V, 5V
TEMPERATURE – C
Times vs. Temperature
OFF
+125C
VD (VS)
VDD = 5V
–10
–20
–30
–40
–50
ATTENUATION – dB
–60
–70
TPC 7.
TA = 25C
= 3V, 5V
V
DD
0.1
110
FREQUENCY – MHz
Off Isolation vs. Frequency
0
–1
–2
–3
–4
–5
–6
ATTENUATION – dB
–7
–8
VDD = 3V, 5V
= 25C
T
A
–9
0.2
120
FREQUENCY – MHz
10
TPC 8. On Response vs. Frequency
–6–
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
LOGIC THRESHOLD VOLTAGE – V
0.2
0
0
VIN RISING
VIN FALLING
21
3456
VDD – V
TPC 9. Logic Threshold Voltage
vs. Supply Voltage
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Page 7
Test Circuits
ADG801/ADG802
I
DS
V1
SD
V
S
R
= V1/I
ON
DS
Test Circuit 1. On Resistance
0.1F
V
S
V
S
IN
R
S
Test Circuit 2. Off Leakage
V
DD
V
DD
SD
GND
Test Circuit 4. Switching Times
V
DD
V
DD
SD
IN
GND
I
S
(OFF)
SD
A
V
OUT
R 50
C
L
L
35pF
V
OUT
C
L
1nF
V
OUT
V
V
IN
V
IN
I
D
(OFF)
A
V
D
ADG801
V
IN
V
IN
ADG802
OUT
ADG801
ADG802
50% 50%
50% 50%
90% 90%
t
ON
ON
= CL V
Q
INJ
OUT
I
D
SD
NC
NC = NO CONNECT
(ON)
A
V
D
Test Circuit 3. On Leakage
t
OFF
OFF
V
OUT
REV. 0
Test Circuit 5. Charge Injection
V
DD
0.1F
V
DD
IN
S
50
D
V
IN
GND
OFF ISOLATION = 20 LOG
NETWORK ANALYZER
50
V
V
OUT
R
L
50
S
IN
V
IN
V
OUT
V
S
Test Circuit 6. Off Isolation
0.1F
V
DD
V
DD
S
D
GND
INSERTION LOSS
= 20
LOG
V
V
OUT
Test Circuit 7. Bandwidth
NETWORK
ANALYZER
50
V
S
V
OUT
R
L
50
WITH SWITCH
OUT
WITHOUT SWITCH
–7–
Page 8
ADG801/ADG802
OUTLINE DIMENSIONS
Dimensions shown in inches and (mm)
0.1220 (3.10)
0.1142 (2.90)
0.1220 (3.10)
0.1142 (2.90)
0.1201 (3.05)
0.1118 (2.84)
COPLANARITY
0.0059 (0.15)
0.0020 (0.05)
85
PIN 1
0.0256 (0.65) BSC
0.0181 (0.46)
0.0079 (0.20)
8-Lead SOIC
(RM-8)
0.1988 (5.05)
0.1870 (4.75)
41
0.0429 (1.09)
0.0370 (0.94)
0.0110 (0.28)
SEATING PLANE
0.0031 (0.08)
33 27
0.1201 (3.05)
0.1118 (2.84)
0.0280 (0.71)
0.0161 (0.41)
0.0709 (1.80)
0.0591 (1.50)
PIN 1
0.0512 (1.30)
0.0354 (0.90)
0.0059 (0.15)
0.0000 (0.00)
COPLANARITY
0.1220 (3.10)
0.1063 (2.70)
6
1 3
2
0.0748 (1.90)
BSC
0.0197 (0.50)
0.0098 (0.25)
6-Lead SOT-23
(RT-6)
4 5
0.1181 (3.00)
0.0984 (2.50)
0.0374 (0.95) BSC
0.0571 (1.45)
0.0354 (0.90)
SEATING PLANE
0.0091 (0.23)
0.0031 (0.08)
10
0
C02800–0–5/02(0)
0.0217 (0.55)
0.0138 (0.35)
–8–
PRINTED IN U.S.A.
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