Datasheet ADG779BKS Datasheet (Analog Devices)

CMOS 1.8 V to 5.5 V, 2.5 

a

FEATURES

1.8 V to 5.5 V Single Supply

2.5  On Resistance

0.75  On-Resistance Flatness
–3 dB Bandwidth >200 MHz
Rail-to-Rail Operation
6-Lead SC70 Package
Fast Switching Times

20 ns

t

ON

6 ns

t

OFF

Typical Power Consumption (<0.01 W)
TTL/CMOS-Compatible

APPLICATIONS
Battery-Powered Systems
Communication Systems
Sample Hold Systems
Audio Signal Routing
Video Switching
Mechanical Reed Relay Replacement

SPDT Switch/2:1 Mux In Tiny SC70 Package

ADG779

FUNCTIONAL BLOCK DIAGRAM

ADG779

S2

S1

IN

SWITCHES SHOWN FOR

A LOGIC "1" INPUT

D

GENERAL DESCRIPTION

The ADG779 is a monolithic CMOS SPDT (single-pole,
double-throw) switch. This switch is designed on a submi­cron process that provides low power dissipation yet gives
high switching speed, low on resistance and low leakage
currents.

The ADG779 operates from a single supply range of 1.8 V
to 5.5 V, making it ideal for use in battery-powered instru­ments and with the new generation of DACs and ADCs from
Analog Devices.

Each switch of the ADG779 conducts equally well in both
directions when on. The ADG779 exhibits break-before-make
switching action.

Because of the advanced submicron process, –3 dB bandwidth
of greater than 200 MHz can be achieved.

The ADG779 is available in a 6-lead SC70 package.

PRODUCT HIGHLIGHTS

1. Tiny 6-Lead SC70 Package.

2. 1.8 V to 5.5 V Single Supply Operation. The ADG779
offers high performance, including low on resistance and
fast switching times, and is fully specified and guaranteed
with 3 V and 5 V supply rails.

3. Very Low R
operation, R

4. On-Resistance Flatness (R

5. –3 dB Bandwidth >200 MHz.

6. Low Power Dissipation. CMOS construction ensures low
power dissipation.

7. 14 ns Switching Times.

(5 Ω max at 5 V, 10 Ω max at 3 V). At 1.8 V

ON

is typically 40 Ω over the temperature range.

ON

FLAT(ON)

) (0.75 Ω typ).

REV. 0

Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone] www.analog.com
Fax: [phone] © Analog Devices, Inc., 2001

1

ADG779–SPECIFICATIONS

B Version

Parameter 25C +85C Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to V
On Resistance (R

On Resistance Match Between

Channels (∆R

On-Resistance Flatness (R

LEAKAGE CURRENTS

Source OFF Leakage I

Channel ON Leakage I

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V
Input Current

or I

I

INL

INH

DYNAMIC CHARACTERISTICS

t

ON

t

OFF

Break-Before-Make Time Delay, t

Off Isolation –67 dB typ R

Channel-to-Channel Crosstalk –62 dB typ R

Bandwidth –3 dB 200 MHz typ R

(OFF) 7 pF typ f = 1 MHz

C

S

CD, CS (ON) 27 pF typ f = 1 MHz

POWER REQUIREMENTS V

I

DD

NOTES

1

Temperature ranges are as follows: B Version, –40°C to +85°C.

2

Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

)2 .5 Ω typ VS = 0 V to VDD, IS = –10 mA,

ON

56 Ω max Test Circuit 1

) 0.1 Ω typ VS = 0 V to VDD, IS = –10 mA

ON

FLAT(ON)

2

(OFF) ±0.01 ± 0.05 nA typ VS = 4.5 V/1 V, VD = 1 V/4.5 V,

S

, IS (ON) ± 0.01 ± 0.05 nA typ VS = VD = 1 V, or VS = VD = 4.5 V,

D

INH

INL

) 0.75 Ω typ VS = 0 V to VDD, IS = –10 mA

0.005 µA typ VIN = V

2

14 ns typ RL = 300 Ω, CL = 35 pF

3 ns typ RL = 300 Ω, CL = 35 pF

8 ns typ RL = 300 Ω, CL = 35 pF,

D

–87 dB typ R

–82 dB typ R

0.001 µA typ

(VDD = 5 V  10%, GND = 0 V)

–40C to

DD

V

0.8 Ω max

1.2 Ω max

2.4 V min

0.8 V max

± 0.1 µA max

20 ns max V

6 ns max V

1 ns min V

1.0 µA max

VDD = 5.5 V

Test Circuit 2

Test Circuit 3

or V

INL

= 3 V, Test Circuit 4

S

= 3 V, Test Circuit 4

S

= VS2 = 3 V, Test Circuit 5

S1

= 50 Ω, CL = 5 pF, f = 10 MHz

L

= 50 Ω, CL = 5 pF, f = 1 MHz,

L

INH

Test Circuit 6

= 50 Ω, CL = 5 pF, f = 10 MHz

L

= 50 Ω, CL = 5 pF, f = 1 MHz,

L

Test Circuit 7

= 50 Ω, CL = 5 pF, Test Circuit 8

L

= 5.5 V

DD

Digital Inputs = 0 V or 5 V

–2–

REV. 0

ADG779

SPECIFICATIONS

1

(VDD = 3 V  10%, GND = 0 V)

B Version

–40C to

Parameter 25C +85C Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to V
On Resistance (R

)67Ω typ VS = 0 V to VDD, IS = –10 mA,

ON

DD

V

10 Ω max Test Circuit 1

On Resistance Match Between

Channels (∆R

) 0.1 Ω typ VS = 0 V to VDD, IS = –10 mA

ON

0.8 Ω max

On-Resistance Flatness (R

LEAKAGE CURRENTS

Source OFF Leakage I

S

FLAT(ON)

2

(OFF) ± 0.01 ± 0.05 nA typ VS = 3 V/1 V, VD = 1 V/3 V,

) 2.5 Ω typ VS = 0 V to VDD, IS = –10 mA

VDD = 3.3 V

Test Circuit 2

Channel ON Leakage I

, IS (ON) ± 0.01 ± 0.05 nA typ VS = VD = 1 V, or VS = VD = 3 V,

D

Test Circuit 3

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V

INL

INH

2.0 V min

0.8 V max

Input Current

I

INL

or I

INH

0.005 µA typ VIN = V

INL

or V

INH

± 0.1 µA max

DYNAMIC CHARACTERISTICS

t

ON

t

OFF

Break-Before-Make Time Delay, t

Off Isolation –67 dB typ R

2

16 ns typ RL = 300 Ω, CL = 35 pF

24 ns max V

= 2 V, Test Circuit 4

S

4 ns typ RL = 300 Ω, CL = 35 pF

7 ns max V

D

8 ns typ RL = 300 Ω, CL = 35 pF

1 ns min V

–87 dB typ R

= 2 V, Test Circuit 4

S

= VS2 = 2 V, Test Circuit 5

S1

= 50 Ω, CL = 5 pF, f = 10 MHz

L

= 50 Ω, CL = 5 pF, f = 1 MHz,

L

Test Circuit 6

Channel-to-Channel Crosstalk –62 dB typ R

–82 dB typ R

= 50 Ω, CL = 5 pF, f = 10 MHz

L

= 50 Ω, CL = 5 pF, f = 1 MHz,

L

Test Circuit 7
Bandwidth –3 dB 200 MHz typ R
C

(OFF) 7 pF typ f = 1 MHz

S

= 50 Ω, CL = 5 pF, Test Circuit 8

L

CD, CS (ON) 27 pF typ f = 1 MHz

POWER REQUIREMENTS V

= 3.3 V

DD

Digital Inputs = 0 V or 3 V
I

DD

0.001 µA typ

1.0 µA max

NOTES

1

Temperature ranges are as follows: B Version, –40°C to +85°C.

2

Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

–3–REV. 0

ADG779

WARNING!

ESD SENSITIVE DEVICE

ABSOLUTE MAXIMUM RATINGS

(TA = 25°C unless otherwise noted)

VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V

Analog, Digital Inputs

2

. . . . . . . . . . –0.3 V to VDD + 0.3 V or

1

30 mA, Whichever Occurs First

Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA

(Pulsed at 1 ms, 10% Duty Cycle max)

Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . 30 mA

Operating Temperature Range

Industrial (B Version) . . . . . . . . . . . . . . . . . –40°C to +85°C

Storage Temperature Range . . . . . . . . . . . . . –65°C to +150°C

Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . 150°C

SC70 Package, Power Dissipation . . . . . . . . . . . . . . . . 315 mW

Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 332°C/W

θ

JA

θ

Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 120°C/W

JC

Lead Temperature, Soldering

Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . . . 215°C

Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 220°C

NOTES

1

Stresses above those listed under Absolute Maximum Ratings may cause perma-

nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. Only one absolute
maximum rating may be applied at any one time.

2

Overvoltages at IN, S or D will be clamped by internal diodes. Current should be

limited to the maximum ratings given.

Table I. Truth Table

ADG779 IN Switch S1 Switch S2

0 ON OFF
1 OFF ON

PIN CONFIGURATION

6-Lead SC70

TERMINOLOGY

V

DD

Most Positive Power Supply Potential.
GND Ground (0 V) Reference.
S Source Terminal. May be an input or output.
D Drain Terminal. May be an input or output.
IN Logic Control Input.
R

ON

∆R

ON

R

FLAT(ON)

Ohmic resistance between D and S.

On resistance match between any two channels

i.e., R

max – R

ON

ON

min.

Flatness is defined as the difference between the

maximum and minimum value of on resistance as

measured over the specified analog signal range.

(OFF) Source Leakage Current with the switch “OFF.”

I

S

I

, IS (ON) Channel Leakage Current with the switch “ON.”

D

V

) Analog Voltage on Terminals D, S.

D (VS

CS (OFF) “OFF” Switch Source Capacitance.
C

, CS (ON) “ON” Switch Capacitance.

D

t

ON

Delay between applying the digital control input

and the output switching on.
t

OFF

Delay between applying the digital control input

and the output switching off.
t

D

“OFF” time or “ON” time measured between the

90% points of both switches, when switching

from one address state to another.
Crosstalk A measure of unwanted signal that is coupled

through from one channel to another as a result

of parasitic capacitance.
Off Isolation A measure of unwanted signal coupling through

an “OFF” switch.
On Response The frequency response of the “ON” switch.
On Loss The loss due to the “ON” resistance of the switch.

S2

6

5

D

4

S1

V

GND

IN

DD

1

ADG779

2

TOP VIEW

(Not to Scale)

3

ORDERING GUIDE

Model Temperature Range Package Description Package Option Branding Information*

ADG779BKS –40°C to +85°C SC70 (Plastic Surface Mount) KS-6 SKB

*Brand = Brand on these packages is limited to three characters due to space constraints.

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the ADG779 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.

–4–

REV. 0

Typical Performance Characteristics–

TEMPERATURE – C

0.15

0.10

–0.05

09010

CURRENT – nA

20 30 40 50 60 70 80

0.05

0

I

D

, IS (ON)

IS (OFF)

V

DD

= 5V

V

D

= 4.5V/1V

V

S

= 1V/4.5V

TEMPERATURE – C

0.15

0.10

–0.05

09010

CURRENT – nA

20 30 40 50 60 70 80

0.05

0

I

D

, IS (ON)

IS (OFF)

V

DD

= 3V

V

D

= 3V/1V

V

S

= 1V/3V

FREQUENCY – Hz

1n

10

I

SUPPLY

– A

100 1k 10k 100k 1M 10M 100M

10n

100n

1

10

100

1m

10m

1

VDD = 5V

6.0

5.5

5.0

4.5

4.0

3.5

– 

3.0

ON

R

2.5

2.0

1.5

1.0

0.5

0

VDD = 3.0V

0 5.00.5

1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

VD OR VS – DRAIN OR SOURCE VOLTAGE – V

VDD = 2.7V

VDD = 5.0V

VDD = 4.5V

T

A

= 25C

ADG779

TPC 1. On Resistance as a Function of VD (VS) Single
Supplies

6.0

5.5

5.0

4.5

4.0

3.5

– 

3.0

ON

R

2.5

2.0

1.5

1.0

0.5

0

0 3.00.5

VD OR VS – DRAIN OR SOURCE VOLTAGE – V

+85C

+25C

–40C

1.0 1.5 2.0 2.5

TPC 2. On Resistance as a Function of VD (VS) for
Different Temperatures V

6.0

5.5

5.0

4.5

4.0

3.5

– 

3.0

ON

R

2.5

2.0

1.5

1.0

0.5

0

0 5.00.5

TPC 3. On Resistance as a Function of VD (VS) for
Different Temperatures V

1.0 1.5 2.0 2.5 3.0

VD OR VS – DRAIN OR SOURCE VOLTAGE – V

DD

+85C

+25C

–40C

DD

= 3 V

3.5 4.0 4.5

= 5 V

TPC 4. Leakage Currents as a Function of Temperature

VDD = 3V

TPC 5. Leakage Currents as a Function of Temperature

VDD = 5V

TPC 6. Supply Current vs. Input Switching Frequency

–5–REV. 0

ADG779

–30

VDD = 5V, 3V

–40

–50

–60

–70

–80

–90

OFF ISOLATION – dB

–100

–110

–120

–130

10k 100k 1M 10M 100M

FREQUENCY – Hz

TPC 7. Off Isolation vs. Frequency

–30

–40

–50

–60

–70

–80

–90

CROSSTALK – dB

–100

–110

–120

–130

10k

100k 1M 10M 100M 0

FREQUENCY – Hz

TPC 8. Crosstalk vs. Frequency

VDD = 5V, 3V

0

VDD = 5V

–2

–4

ON RESPONSE – dB

0

–6

100k 1M 100M

FREQUENCY – Hz

10M10k

TPC 9. On Response vs. Frequency

–6–

REV. 0

Test Circuits

ADG779

I

DS

V1

SD

V

S

RON = V1/ I

DS

Test Circuit 1. On Resistance

0.1F

V

S

V

S1

V

S2

V

IN

0.1F

S1

S2

IN

IN

IS (OFF) ID (OFF)

V

S

Test Circuit 2. Off Leakage

V

DD

V

DD

SD

GND

Test Circuit 4. Switching Times

V

DD

V

DD

D

D2

R
300

GND

SD

A A

V

R

L

300

L2

C
35pF

C

L2

35pF

OUT

L

V

OUT

SD

V

D

V

S

ID (ON)

A

V

D

Test Circuit 3. On Leakage

V

IN

V

OUT

V

IN

V

OUT

50% 50%

t

ON

50% 50%

0V

50% 50%

0V

t

D

90%

t

90%

D

t

OFF

V

DD

0.1F

V

DD

IN

S

50

D

V

IN

GND

OFF ISOLATION = 20 LOG

Test Circuit 6. Off Isolation

NETWORK

ANALYZER

50

V

OUT

R

L

50

V

OUT

V

Test Circuit 5. Break-Before-Make Time Delay, t

V

DD

0.1F

NETWORK

ANALYZER

R

V

L

OUT

50

V

S

S

50

V

S

V

DD

S1

S2

IN

GND

CHANNEL-TO-CHANNEL

CROSSTALK = 20

LOG

D

Test Circuit 7. Channel-to-Channel Crosstalk

V

R
50

OUT

V

D

V

DD

0.1F

NETWORK

V

DD

IN

S

D

V

IN

GND

S

INSERTION LOSS = 20 LOG

ANALYZER

R

50

WITH SWITCH

V

OUT

WITHOUT SWITCH

V

OUT

50

L

V

S

V

OUT

Test Circuit 8. Bandwidth

–7–REV. 0

ADG779

OUTLINE DIMENSIONS

Dimensions shown in inches and (mm).

6-Lead Plastic Surface Mount Package (SC70)

(KS-6)

0.087 (2.20)

0.071 (1.80)

5 4

PIN 1

0.004 (0.10)

0.000 (0.00)

6

1

2

0.051 (1.30)
BSC

0.012 (0.30)

0.006 (0.15)

0.094 (2.40)

0.071 (1.80)

3

0.026 (0.65) BSC

0.043 (1.10)

0.031 (0.80)

SEATING
PLANE

0.007 (0.18)

0.004 (0.10)

8
0

0.053 (1.35)

0.045 (1.15)

0.039 (1.00)

0.031 (0.80)

C02491–1.5–7/01(0)

0.012 (0.30)

0.004 (0.10)

–8–

PRINTED IN U.S.A.

REV. 0