Datasheet ADG774ABRQ Datasheet (Analog Devices)

Page 1
Low Voltage 400 MHz Quad 2:1 Mux
1 OF 2
DECODER
ADG774A
EN
IN
S1A
S1B
S2A
S2B
S3A
S3B
S4A
S4B
D1
D2
D3
D4
a
FEATURES Bandwidth >400 MHz Low Insertion Loss and On Resistance: 2.2 Typical On-Resistance Flatness 0.3 Typical Single 3 V/5 V Supply Operation Very Low Distortion: <0.3% Low Quiescent Supply Current (1 nA Typical) Fast Switching Times
6 ns
t
ON
3 ns
t
OFF
TTL/CMOS Compatible
GENERAL DESCRIPTION
The ADG774A is a monolithic CMOS device comprising four 2:1 multiplexer/demultiplexers with high impedance outputs. The CMOS process provides low power dissipation yet gives high switching speed and low on resistance. The on-resistance variation is typically less than 0.5 over the input signal range.
The bandwidth of the ADG774A is typically 400 MHz and this, coupled with low distortion (typically 0.3%), makes the part suitable for switching of high-speed data signals.
The on-resistance profile is very flat over the full analog input range ensuring excellent linearity and low distortion. CMOS con­struction ensures ultralow power dissipation.
The ADG774A operates from a single 3.3 V/5 V supply and is TTL logic compatible. The control logic for each switch is shown in the Truth Table.
These switches conduct equally well in both directions when ON. In the OFF condition, signal levels up to the supplies are blocked. The ADG774A switches exhibit break-before-make switching action.
with 3 ns Switching Time
ADG774A

FUNCTIONAL BLOCK DIAGRAM

PRODUCT HIGHLIGHTS

1. Wide bandwidth data rates >400 MHz.
2. Ultralow Power Dissipation.
3. Low leakage over temperature.
4. Break-Before-Make Switching. This prevents channel shorting when the switches are config­ured as a multiplexer.
5. Crosstalk is typically –70 dB @ 10 MHz.
6. Off isolation is typically –65 dB @ 10 MHz.
REV. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 www.analog.com Fax: 781/326-8703 © Analog Devices, Inc., 2001
Page 2
ADG774A–SPECIFICATIONS
1
SINGLE SUPPLY
(VDD = 5 V 10%, GND = 0 V. All specifications T
B Version
to
T
Parameter 25CT
MIN
MAX
ANALOG SWITCH
Analog Signal Range 0 to 2.5 V On Resistance (R
) 2.2 typ VD = 0 V to 1 V; IS = –10 mA
ON
3.5 4 max
On Resistance Match Between
Channels (∆R
)0.15 typ VD = 0 V to 1 V; IS = –10 mA
ON
0.5 max
On Resistance Flatness (R
FLAT(ON)
) 0.3 typ VD = 0 V to 1 V; IS = –10 mA
0.6 max
LEAKAGE CURRENTS
Source OFF Leakage IS (OFF) ± 0.001 nA typ VD = 3 V, VS = 1 V; VD = 1 V, VS = 3 V;
± 0.1 ± 0.25 nA max Test Circuit 2
Drain OFF Leakage I
(OFF) ± 0.001 nA typ VD = 3 V, VS = 1 V; VD = 1 V, VS = 3 V;
D
± 0.1 ± 0.25 nA max Test Circuit 2
Channel ON Leakage I
, IS (ON) ±0.001 nA typ VD = VS = 3 V; VD = VS = 1 V; Test Circuit 3
D
± 0.1 ± 0.25 nA max
DIGITAL INPUTS
Input High Voltage, V Input Low Voltage, V
INL
INH
2.4 V min
0.8 V max
Input Current
I
INL
or I
INH
0.001 µA typ VIN = V ± 0.1 µA max
CIN, Digital Input Capacitance 3 pF typ
DYNAMIC CHARACTERISTICS
2
tON, tON (EN) 6 ns typ CL = 35 pF, RL = 50 Ω;
12 ns max V
, t
t
OFF
(EN) 3 ns typ CL = 35 pF, RL = 50 Ω;
OFF
6 ns max V
Break-Before-Make Time Delay, t
D
3 ns typ CL = 35 pF, RL = 50 Ω; 1 ns min V
Off Isolation –65 dB typ f = 10 MHz; R Channel-to-Channel Crosstalk –70 dB typ f = 10 MHz; R Bandwidth –3 dB 400 MHz typ Test Circuit 6, R Distortion 0.3 % typ R Charge Injection 6 pC typ C
(OFF) 5 pF typ
C
S
C
(OFF) 7.5 pF typ
D
CD, CS (ON) 12 pF typ
POWER REQUIREMENTS V
I
DD
1 µA max
0.001 µA typ
NOTES
1
Temperature ranges are as follows: B Version, –40°C to +85°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
to T
MIN
unless otherwise noted.)
MAX
Unit Test Conditions/Comments
or V
INL
= 2 V; Test Circuit 4
S
= 2 V; Test Circuit 4
S
= VS2 = 2 V; Test Circuit 5
S1
= 100
L
= 1 nF; Test Circuit 9, VS = 0 V
L
= 5.5 V
DD
Digital Inputs = 0 V or V
INH
= 50 Ω; Test Circuit 7
L
= 50 Ω; Test Circuit 8
L
= 50 Ω;
L
DD
–2–
REV. 0
Page 3
SINGLE SUPPLY
(VDD = 3 V 10%, GND = 0 V. All specifications T
MIN
to T
unless otherwise noted.)
MAX
1
B Version
T
to
Parameter 25CT
MIN
MAX
Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 to 1.5 V On Resistance (R
)4 typ VD = 0 V to 1 V; IS = –10 mA
ON
67 max
On Resistance Match Between
Channels (∆R
)0.15 typ VD = 0 V to 1 V; IS = –10 mA
ON
0.5 max
On Resistance Flatness (R
FLAT(ON)
) 1.5 typ VD = 0 V to 1 V; IS = –10 mA
3 max
LEAKAGE CURRENTS
Source OFF Leakage IS (OFF) ± 0.001 nA typ VD = 2 V, VS = 1 V; VD = 1 V, VS = 2 V;
± 0.1 ± 0.25 nA max Test Circuit 2
Drain OFF Leakage I
(OFF) ± 0.001 nA typ VD = 2 V, VS = 1 V; VD = 1 V, VS = 2 V;
D
± 0.1 ± 0.25 nA max Test Circuit 2
Channel ON Leakage I
, IS (ON) ±0.001 nA typ VD = VS = 2 V; VD = VS = 1 V; Test Circuit 3
D
± 0.1 ± 0.25 nA max
DIGITAL INPUTS
Input High Voltage, V Input Low Voltage, V
INL
INH
2.0 V min
0.4 V max
Input Current
I
INL
or I
INH
0.001 µA typ VIN = V
INL
or V
INH
± 0.1 µA max
CIN, Digital Input Capacitance 3 pF typ
DYNAMIC CHARACTERISTICS
2
tON, tON (EN) 7 ns typ CL = 35 pF, RL = 50 Ω;
14 ns max V
t
, t
OFF
(EN) 4 ns typ CL = 35 pF, RL = 50 Ω;
OFF
8 ns max V
Break-Before-Make Time Delay, t
D
3 ns typ CL = 35 pF, RL = 50 Ω;
1 ns min V Off Isolation –65 dB typ f = 10 MHz; R Channel-to-Channel Crosstalk –70 dB typ f = 10 MHz; R Bandwidth –3 dB 400 MHz typ Test Circuit 6; R Distortion 1.5 % typ R Charge Injection 4 pC typ C C
(OFF) 5 pF typ
S
(OFF) 7.5 pF typ
C
D
= 1.5 V; Test Circuit 4
S
= 1.5 V; Test Circuit 4
S
= VS2 = 1.5 V; Test Circuit 5
S1
= 100
L
= 1 nF; Test Circuit 9, VS = 0 V
L
= 50 , Test Circuit 7
L
= 50 , Test Circuit 8
L
= 50
L
CD, CS (ON) 12 pF typ
POWER REQUIREMENTS V
I
DD
1 µA max
= 3.3 V
DD
Digital Inputs = 0 V or V
DD
0.001 µA typ
NOTES
1
Temperature ranges are as follows: B Version, –40°C to +85°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
ADG774A
Table I. Truth Table
EN IN D1 D2 D3 D4 Function
1 X Hi-Z Hi-Z Hi-Z Hi-Z DISABLE 0 0 S1A S2A S3A S4A IN = 0 0 1 S1B S2B S3B S4B IN = 1
–3–REV. 0
Page 4
ADG774A
WARNING!
ESD SENSITIVE DEVICE

ABSOLUTE MAXIMUM RATINGS

(TA = 25°C unless otherwise noted)
VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +6 V
Analog, Digital Inputs
2
. . . . . . . . . . . –0.3 V to VDD + 0.3 V or
1
. . . . . . . . . . . . . . . . . . . . . . . 30 mA, Whichever Occurs First
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . 100 mA
Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mA
(Pulsed at 1 ms, 10% Duty Cycle max)
Operating Temperature Range
Industrial (B Version) . . . . . . . . . . . . . . . . –40°C to +85°C
Storage Temperature Range . . . . . . . . . . . . –65°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . 150°C
QSOP Package, Power Dissipation . . . . . . . . . . . . . . 566 mW
Thermal Impedance . . . . . . . . . . . . . . . . . . 149.97°C/W
θ
JA
Lead Temperature, Soldering
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . . . 215°C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 220°C
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma­nent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating condi­tions for extended periods may affect device reliability. Only one absolute maxi­mum rating may be applied at any one time.
2
Overvoltages at IN, S or D will be clamped by internal diodes. Current should be limited to the maximum ratings given.
PIN CONFIGURATION
(QSOP)
16
V
DD
15
EN
14
S4A
13
S4B
12
D4
11
S3A
10
S3B
9
D3
S1A
S1B
S2A
S2B
GND
IN
D1
D2
1
2
3
4
ADG774A
TOP VIEW
5
(Not to Scale)
6
7
8

TERMINOLOGY

V
DD
Most Positive Power Supply Potential. GND Ground (0 V) Reference. S Source Terminal. May be an input or output. D Drain Terminal. May be an input or output. IN Logic Control Input. EN Logic Control Input. R
ON
R
ON
R
FLAT(ON)
Ohmic resistance between D and S.
On Resistance match between any two channels
i.e., R
max – R
ON
ON
min.
Flatness is defined as the difference between the
maximum and minimum value of on resistance
as measured over the specified analog signal
range.
(OFF) Source Leakage Current with the switch “OFF.”
I
S
ID (OFF) Drain Leakage Current with the switch “OFF.” I
, IS (ON) Channel Leakage Current with the switch “ON.”
D
V
) Analog Voltage on Terminals D, S.
D (VS
C
(OFF) “OFF” Switch Source Capacitance.
S
C
(OFF) “OFF” Switch Drain Capacitance.
D
C
, CS (ON) “ON” Switch Capacitance.
D
t
ON
Delay between applying the digital control input
and the output switching on. See Test Circuit 4. t
OFF
Delay between applying the digital control input
and the output switching Off. t
D
“OFF” time or “ON” time measured between
the 90% points of both switches, when switching
from one address state to another. See Test
Circuit 5. Crosstalk A measure of unwanted signal that is coupled
through from one channel to another as a result
of parasitic capacitance. Off Isolation A measure of unwanted signal coupling through an
“OFF” switch. Bandwidth Frequency response of the switch in the ON
state measured at 3 dB down. Distortion R
FLAT(ON)/RL

ORDERING GUIDE

Model Temperature Range Package Descriptions Package Options
ADG774ABRQ –40°C to +85°C RQ = 0.15" Quarter Size Outline Package (QSOP) RQ-16

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the ADG774A features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
–4–
REV. 0
Page 5
Typical Performance Characteristics–ADG774A
VDD = 3.0V V
SS
= 0V
TEMP = 25
C
–0.020
CURRENT – nA
0.015
0.010
0.005
0
0.010
0.015
0.020
0.025
0.005
–0.025
V
S
– V(VD = VDD – VS)
0 1.0 1.5
2.5 3.0
V
S
0.5
2.0
ID, IS (ON)
IS (OFF)
ID (OFF)
20
TA = 25 C
16
12
ON
R
8
4
0
01 VS OR VD OR DRAIN SOURCE VOLTAGE – V
VDD = 5.0V
VDD = 4.5V
VDD = 5.5V
2345
TPC 1. On Resistance as a Function of V
(VS) for Various Single Supplies
D
20
VDD = 3V
15
10
ON
R
5
0
0 0.5 VS OR VD OR DRAIN SOURCE VOLTAGE – V
+85 C
+25 C
–40
C
1.0 1.5 2.0 2.5 3.0
TPC 4. On Resistance as a Function
(VS) for Different Temperatures
of V
D
with 3 V Single Supplies
20
TA = 25 C
16
12
ON
R
8
4
0
VDD = 3.0V
VDD = 2.7V
VDD = 3.3V
00.5 VS OR VD OR DRAIN SOURCE VOLTAGE – V
1.0 1.5 2.0 2.5 3.0
TPC 2. On Resistance as a Function
(VS) for Various Single Supplies
of V
D
0.025 VDD = 5.0V
–0.005
CURRENT – nA
0.010
0.015
0.020
0.025
0.020
0.015
0.010
0.005
V
= 0V
V
SS
TEMP = 25
ID (OFF)
0
IS (OFF)
01
S
V
C
2
– V(VD = VDD – VS)
S
IS, ID (ON)
3
TPC 5. Leakage Current as a Function of V
(VS)
D
20
VDD = 5V
15
10
ON
R
+85
C
5
0
012345 VS OR VD OR DRAIN SOURCE VOLTAGE – V
+25 C
TPC 3. On Resistance as a Function
(VS) for Different Temperatures
of V
D
with 5 V Single Supplies
4
TPC 6. Leakage Current as a Function of V
(VS)
D
–40 C
0.05 VDD = 5.0V
0.04
= 0V
V
SS
C
= 3V/1V
D
= 1V/3V
S
ID, IS (ON)
ID (OFF)
25 35 45 55 65 75 85
TEMPERATURE –
IS (OFF)
C
CURRENT – nA
0.03
0.02
0.01
0.01
0.02
0.03
0.04
0.05
TEMP = 25 V V
0
515
TPC 7. Leakage Current as a Function of Temperature
REV. 0
0.05
VDD = 3.0V
CURRENT – nA
0.04
0.03
0.02
0.01
0.01
0.02
0.03
0.04
0.05
V
SS
TEMP = 25 V
D
V
S
0
ID (OFF)
515
= 0V
C
= 2V/1V
= 1V/2V
25 35 45 55 65 75 85
TEMPERATURE –
ID, IS (ON)
IS (OFF)
TPC 8. Leakage Current as a Function of Temperature
–5–
0
20
40
60
ATTENUATION dB
80
100
0.3
0.1 1 10 100 1000
C
FREQUENCY – MHz
TPC 9. Off Isolation vs. Frequency
Page 6
ADG774A
0
20
40
60
ATTENUATION dB
80
100
0.3
0.1 1 10 100 1000 FREQUENCY – MHz
TPC 10. Crosstalk vs. Frequency
10 BASE TX+
10 BASE TX–
100 BASE TX+
100 BASE TX–
10 BASE TX+
10 BASE TX–
100 BASE TX+
100 BASE TX–
TX1
TX2
RX1
RX2
ON RESPONSE – dB
0
5
10
15
0.3
0.1 1 10 100 1000 FREQUENCY – MHz
TPC 11. Bandwidth
ADG774A
TRANSFORMER
0
1
pC
INJ
Q
2
3
4
5
6
7
0
VDD = 3V
V
= 5V
DD
0.5 1.0 1.5 2.0 2.5 VOLTAGE – V
TPC 12. Charge Injection vs. Source Voltage
RJ45
TX1
RX1
Figure 2. Loop Back
10 BASE TX
100 BASE TX
Figure 1. Full Duplex Transceiver
120 100
Figure 3. Line Termination
Figure 4. Line Clamp
–6–
REV. 0
Page 7
Test Circuits
ADG774A
I
DS
V1
SD
V
S
RON = V1/I
DS

Test Circuit 1. On Resistance

V
S
5V
0.1F
V
DD
SD
IN
GND
EN
5V
0.1F
IS (OFF) ID (OFF)
SD
A A
V
S
V
D

Test Circuit 2. Off Leakage

3V
V
IN
V
OUT
R 100
C
L
L
35pF
V
OUT

Test Circuit 4. Switching Times

50% 50%
90% 90%
t
ON
NC
SD
NC = NO CONNECT
ID (ON)
A
V
D

Test Circuit 3. On Leakage

t
OFF
V
DD
S1A
V
S1B
S
V
EN
S
DECODER
GND
D1
R
L
100
V
C
L
35pF
OUT
3V
V
IN
0V
V
OUT
V
S
50% 50%
50% 50%
t
D
t
D

Test Circuit 5. Break-Before-Make Time Delay

V
DD
0.1F
ADG774A
S1A
IN
V
IN
EN
D1
GND
NETWORK
ANALYZER
50
V
S
V
50
OUT
IN
V
IN
V
DD
0.1F
ADG774A
EN
GND
S1A
D1
50
NETWORK ANALYZER
50
V
S
V
50
OUT

Test Circuit 6. Bandwidth

Test Circuit 7. Off Isolation

–7–REV. 0
Page 8
ADG774A
IN
V
DD
0.1F
ADG774A
S1A
S2A
NETWORK ANALYZER
50
V
S
V
OUT
R
L
50
GND
D2
D1
50
V
IN
EN
C02373–1.5–6/01(0)

Test Circuit 8. Channel-to-Channel Crosstalk

5V
V
DD
R
S
V
S
S1A
S1B
S2A
S2B
S3A
S3B
S4A
S4B
ADG774A
1 OF 2
DECODER
EN
D1 V
D2 V
D3 V
D4 V
OUT
OUT
OUT
OUT
C
L
1nF
C
L
1nF
C
L
1nF
C
L
1nF
IN
3V
V
IN
V
OUT
Q
INJ
= CL  V
OUT
V
OUT

Test Circuit 9. Charge Injection

0.157 (3.99)
0.150 (3.81)
0.059 (1.50) MAX
0.010 (0.25)
0.004 (0.10)
OUTLINE DIMENSIONS
Dimensions shown in inches and (mm).
16-Lead QSOP
(RQ-16)
0.197 (5.00)
0.189 (4.80)
16
1
PIN 1
0.025 (0.64)
BSC
9
8
0.069 (1.75)
0.053 (1.35)
0.012 (0.30)
0.008 (0.20)
0.244 (6.20)
0.228 (5.79)
SEATING PLANE
0.010 (0.20)
0.007 (0.18)
–8–
PRINTED IN U.S.A.
8 0
0.050 (1.27)
0.016 (0.41)
REV. 0
Loading...