FEATURES
Bandwidth >400 MHz
Low Insertion Loss and On Resistance: 2.2 Typical
On-Resistance Flatness 0.3 Typical
Single 3 V/5 V Supply Operation
Very Low Distortion: <0.3%
Low Quiescent Supply Current (1 nA Typical)
Fast Switching Times
6 ns
t
ON
3 ns
t
OFF
TTL/CMOS Compatible
GENERAL DESCRIPTION
The ADG774A is a monolithic CMOS device comprising four
2:1 multiplexer/demultiplexers with high impedance outputs.
The CMOS process provides low power dissipation yet gives
high switching speed and low on resistance. The on-resistance
variation is typically less than 0.5 Ω over the input signal range.
The bandwidth of the ADG774A is typically 400 MHz and this,
coupled with low distortion (typically 0.3%), makes the part
suitable for switching of high-speed data signals.
The on-resistance profile is very flat over the full analog input
range ensuring excellent linearity and low distortion. CMOS construction ensures ultralow power dissipation.
The ADG774A operates from a single 3.3 V/5 V supply and is
TTL logic compatible. The control logic for each switch is shown
in the Truth Table.
These switches conduct equally well in both directions when
ON. In the OFF condition, signal levels up to the supplies are
blocked. The ADG774A switches exhibit break-before-make
switching action.
with 3 ns Switching Time
ADG774A
FUNCTIONAL BLOCK DIAGRAM
PRODUCT HIGHLIGHTS
1. Wide bandwidth data rates >400 MHz.
2. Ultralow Power Dissipation.
3. Low leakage over temperature.
4. Break-Before-Make Switching.
This prevents channel shorting when the switches are configured as a multiplexer.
5. Crosstalk is typically –70 dB @ 10 MHz.
6. Off isolation is typically –65 dB @ 10 MHz.
REV. 0
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices.
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Only one absolute maximum rating may be applied at any one time.
2
Overvoltages at IN, S or D will be clamped by internal diodes. Current should be
limited to the maximum ratings given.
PIN CONFIGURATION
(QSOP)
16
V
DD
15
EN
14
S4A
13
S4B
12
D4
11
S3A
10
S3B
9
D3
S1A
S1B
S2A
S2B
GND
IN
D1
D2
1
2
3
4
ADG774A
TOP VIEW
5
(Not to Scale)
6
7
8
TERMINOLOGY
V
DD
Most Positive Power Supply Potential.
GNDGround (0 V) Reference.
SSource Terminal. May be an input or output.
DDrain Terminal. May be an input or output.
INLogic Control Input.
ENLogic Control Input.
R
ON
∆R
ON
R
FLAT(ON)
Ohmic resistance between D and S.
On Resistance match between any two channels
i.e., R
max – R
ON
ON
min.
Flatness is defined as the difference between the
maximum and minimum value of on resistance
as measured over the specified analog signal
range.
(OFF)Source Leakage Current with the switch “OFF.”
I
S
ID (OFF)Drain Leakage Current with the switch “OFF.”
I
, IS (ON)Channel Leakage Current with the switch “ON.”
D
V
)Analog Voltage on Terminals D, S.
D (VS
C
(OFF)“OFF” Switch Source Capacitance.
S
C
(OFF)“OFF” Switch Drain Capacitance.
D
C
, CS (ON) “ON” Switch Capacitance.
D
t
ON
Delay between applying the digital control input
and the output switching on. See Test Circuit 4.
t
OFF
Delay between applying the digital control input
and the output switching Off.
t
D
“OFF” time or “ON” time measured between
the 90% points of both switches, when switching
from one address state to another. See Test
Circuit 5.
CrosstalkA measure of unwanted signal that is coupled
through from one channel to another as a result
of parasitic capacitance.
Off Isolation A measure of unwanted signal coupling through an
“OFF” switch.
BandwidthFrequency response of the switch in the ON
ADG774ABRQ–40°C to +85°CRQ = 0.15" Quarter Size Outline Package (QSOP)RQ-16
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the ADG774A features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
–4–
REV. 0
Page 5
Typical Performance Characteristics–ADG774A
VDD = 3.0V
V
SS
= 0V
TEMP = 25
C
–0.020
CURRENT – nA
–0.015
–0.010
–0.005
0
0.010
0.015
0.020
0.025
0.005
–0.025
V
S
– V(VD = VDD – VS)
01.01.5
2.53.0
V
S
0.5
2.0
ID, IS (ON)
IS (OFF)
ID (OFF)
20
TA = 25 C
16
12
–
ON
R
8
4
0
01
VS OR VD OR DRAIN SOURCE VOLTAGE – V
VDD = 5.0V
VDD = 4.5V
VDD = 5.5V
2345
TPC 1. On Resistance as a Function
of V
(VS) for Various Single Supplies
D
20
VDD = 3V
15
–
10
ON
R
5
0
00.5
VS OR VD OR DRAIN SOURCE VOLTAGE – V
+85 C
+25 C
–40
C
1.01.52.02.53.0
TPC 4. On Resistance as a Function
(VS) for Different Temperatures
of V
D
with 3 V Single Supplies
20
TA = 25 C
16
12
–
ON
R
8
4
0
VDD = 3.0V
VDD = 2.7V
VDD = 3.3V
00.5
VS OR VD OR DRAIN SOURCE VOLTAGE – V
1.01.52.02.53.0
TPC 2. On Resistance as a Function
(VS) for Various Single Supplies
of V
D
0.025
VDD = 5.0V
–0.005
CURRENT – nA
–0.010
–0.015
–0.020
–0.025
0.020
0.015
0.010
0.005
V
= 0V
V
SS
TEMP = 25
ID (OFF)
0
IS (OFF)
01
S
V
C
2
– V(VD = VDD – VS)
S
IS, ID (ON)
3
TPC 5. Leakage Current as a
Function of V
(VS)
D
20
VDD = 5V
15
–
10
ON
R
+85
C
5
0
012345
VS OR VD OR DRAIN SOURCE VOLTAGE – V
+25 C
TPC 3. On Resistance as a Function
(VS) for Different Temperatures
of V
D
with 5 V Single Supplies
4
TPC 6. Leakage Current as a
Function of V
(VS)
D
–40 C
0.05
VDD = 5.0V
0.04
= 0V
V
SS
C
= 3V/1V
D
= 1V/3V
S
ID, IS (ON)
ID (OFF)
25 35 45 55 65 75 85
TEMPERATURE –
IS (OFF)
C
CURRENT – nA
0.03
0.02
0.01
–0.01
–0.02
–0.03
–0.04
–0.05
TEMP = 25
V
V
0
515
TPC 7. Leakage Current as a Function
of Temperature
REV. 0
0.05
VDD = 3.0V
CURRENT – nA
0.04
0.03
0.02
0.01
–0.01
–0.02
–0.03
–0.04
–0.05
V
SS
TEMP = 25
V
D
V
S
0
ID (OFF)
515
= 0V
C
= 2V/1V
= 1V/2V
25 35 45 55 65 75 85
TEMPERATURE –
ID, IS (ON)
IS (OFF)
TPC 8. Leakage Current as a
Function of Temperature
–5–
0
–20
–40
–60
ATTENUATION – dB
–80
–100
0.3
0.11101001000
C
FREQUENCY – MHz
TPC 9. Off Isolation vs. Frequency
Page 6
ADG774A
0
–20
–40
–60
ATTENUATION – dB
–80
–100
0.3
0.11101001000
FREQUENCY – MHz
TPC 10. Crosstalk vs. Frequency
10 BASE TX+
10 BASE TX–
100 BASE TX+
100 BASE TX–
10 BASE TX+
10 BASE TX–
100 BASE TX+
100 BASE TX–
TX1
TX2
RX1
RX2
ON RESPONSE – dB
0
–5
–10
–15
0.3
0.11101001000
FREQUENCY – MHz
TPC 11. Bandwidth
ADG774A
TRANSFORMER
0
–1
– pC
INJ
Q
–2
–3
–4
–5
–6
–7
0
VDD = 3V
V
= 5V
DD
0.51.01.52.02.5
VOLTAGE – V
TPC 12. Charge Injection vs. Source
Voltage
RJ45
TX1
RX1
Figure 2. Loop Back
10 BASE TX
100 BASE TX
Figure 1. Full Duplex Transceiver
120100
Figure 3. Line Termination
Figure 4. Line Clamp
–6–
REV. 0
Page 7
Test Circuits
ADG774A
I
DS
V1
SD
V
S
RON = V1/I
DS
Test Circuit 1. On Resistance
V
S
5V
0.1F
V
DD
SD
IN
GND
EN
5V
0.1F
IS (OFF)ID (OFF)
SD
AA
V
S
V
D
Test Circuit 2. Off Leakage
3V
V
IN
V
OUT
R
100
C
L
L
35pF
V
OUT
Test Circuit 4. Switching Times
50%50%
90%90%
t
ON
NC
SD
NC = NO CONNECT
ID (ON)
A
V
D
Test Circuit 3. On Leakage
t
OFF
V
DD
S1A
V
S1B
S
V
EN
S
DECODER
GND
D1
R
L
100
V
C
L
35pF
OUT
3V
V
IN
0V
V
OUT
V
S
50%50%
50%50%
t
D
t
D
Test Circuit 5. Break-Before-Make Time Delay
V
DD
0.1F
ADG774A
S1A
IN
V
IN
EN
D1
GND
NETWORK
ANALYZER
50
V
S
V
50
OUT
IN
V
IN
V
DD
0.1F
ADG774A
EN
GND
S1A
D1
50
NETWORK
ANALYZER
50
V
S
V
50
OUT
Test Circuit 6. Bandwidth
Test Circuit 7. Off Isolation
–7–REV. 0
Page 8
ADG774A
IN
V
DD
0.1F
ADG774A
S1A
S2A
NETWORK
ANALYZER
50
V
S
V
OUT
R
L
50
GND
D2
D1
50
V
IN
EN
C02373–1.5–6/01(0)
Test Circuit 8. Channel-to-Channel Crosstalk
5V
V
DD
R
S
V
S
S1A
S1B
S2A
S2B
S3A
S3B
S4A
S4B
ADG774A
1 OF 2
DECODER
EN
D1 V
D2 V
D3 V
D4 V
OUT
OUT
OUT
OUT
C
L
1nF
C
L
1nF
C
L
1nF
C
L
1nF
IN
3V
V
IN
V
OUT
Q
INJ
= CL V
OUT
V
OUT
Test Circuit 9. Charge Injection
0.157 (3.99)
0.150 (3.81)
0.059 (1.50)
MAX
0.010 (0.25)
0.004 (0.10)
OUTLINE DIMENSIONS
Dimensions shown in inches and (mm).
16-Lead QSOP
(RQ-16)
0.197 (5.00)
0.189 (4.80)
16
1
PIN 1
0.025
(0.64)
BSC
9
8
0.069 (1.75)
0.053 (1.35)
0.012 (0.30)
0.008 (0.20)
0.244 (6.20)
0.228 (5.79)
SEATING
PLANE
0.010 (0.20)
0.007 (0.18)
–8–
PRINTED IN U.S.A.
8
0
0.050 (1.27)
0.016 (0.41)
REV. 0
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