Datasheet ADG749BKS Datasheet (Analog Devices)

CMOS Low Voltage

a

FEATURES

1.8 V to 5.5 V Single Supply
5  (Max) On Resistance

0.75  (Typ) On-Resistance Flatness
–3 dB Bandwidth >200 MHz
Rail-to-Rail Operation
6-Lead SC70 Package
Fast Switching Times

20 ns

t

ON

6 ns

t

OFF

Typical Power Consumption (<0.01 W)
TTL/CMOS-Compatible

APPLICATIONS
Battery-Powered Systems
Communication Systems
Sample Hold Systems
Audio Signal Routing
Video Switching
Mechanical Reed Relay Replacement

GENERAL DESCRIPTION

The ADG749 is a monolithic CMOS SPDT switch. This switch
is designed on a submicron process that provides low power
dissipation yet gives high switching speed, low on resistance and
low leakage currents.

The ADG749 can operate from a single supply range of 1.8 V to

5.5 V, making it ideal for use in battery-powered instruments and
with the new generation of DACs and ADCs from Analog Devices.

Each switch of the ADG749 conducts equally well in both
directions when on. The ADG749 exhibits break-before-make
switching action.

Because of the advanced submicron process, –3 dB bandwidths
of greater than 200 MHz can be achieved.

The ADG749 is available in a 6-lead SC70 package.

2.5  SPDT Switch In SC70 Package
ADG749

FUNCTIONAL BLOCK DIAGRAM

ADG749

S2

S1

IN

SWITCHES SHOWN FOR

A LOGIC "1" INPUT

PRODUCT HIGHLIGHTS

1. 1.8 V to 5.5 V Single Supply Operation. The ADG749
offers high performance, including low on resistance and
fast switching times, and is fully specified and guaranteed
with 3 V and 5 V supply rails.

2. Very Low R
operation, R

3. On-Resistance Flatness (R

4. –3 dB Bandwidth >200 MHz.

5. Low Power Dissipation. CMOS construction ensures low
power dissipation.

6. Fast t

7. Tiny 6-lead SC70 package.

ON/tOFF.

(5 Ω max at 5 V, 10 Ω max at 3 V). At 1.8 V

ON

is typically 40 Ω over the temperature range.

ON

FLAT(ON)

D

) (0.75 Ω typ).

REV. 0

Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone] World Wide Web Site: http://www.analog.com
Fax: [phone] © Analog Devices, Inc., 2000

(VDD = 5 V  10%, GND = 0 V. All specifications –40C to +85C, unless otherwise

ADG749–SPECIFICATIONS

1

noted.)

B Version

–40C to

Parameter 25C +85C Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to V
On Resistance (R

)2 .5 Ω typ VS = 0 V to VDD, IS = –10 mA

ON

DD

V

56 Ω max Test Circuit 1

On Resistance Match Between

Channels (∆R

) 0.1 Ω typ VS = 0 V to VDD, IS = –10 mA

ON

0.8 Ω max

On-Resistance Flatness (R

FLAT(ON)

)0.75 Ω typ VS = 0 V to VDD, IS = –10 mA

1.2 Ω max

LEAKAGE CURRENTS

Source OFF Leakage I

2

(OFF) ±0.01 nA typ VS = 4.5 V/1 V, VD = 1 V/4.5 V

S

VDD = 5.5 V

±0.25 ±0.35 nA max Test Circuit 2

Channel ON Leakage I

, IS (ON) ±0.01 nA typ VS = VD = 1 V, or VS = VD = 4.5 V

D

±0.25 ±0.35 nA max Test Circuit 3

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V

INL

INH

2.4 V min

0.8 V max

Input Current

I

INL

or I

INH

0.005 µA typ VIN = V

INL

or V

INH

±0.1 µA max

DYNAMIC CHARACTERISTICS

t

ON

t

OFF

Break-Before-Make Time Delay, t

Off Isolation –67 dB typ R

2

14 ns typ RL = 300 Ω, CL = 35 pF

20 ns max V

= 3 V, Test Circuit 4

S

3 ns typ RL = 300 Ω, CL = 35 pF

6 ns max V

8 ns typ RL = 300 Ω, CL = 35 pF,

D

1 ns min V

–87 dB typ R

= 3 V, Test Circuit 4

S

= VS2 = 3 V, Test Circuit 5

S1

= 50 Ω, CL = 5 pF, f = 10 MHz

L

= 50 Ω, CL = 5 pF, f = 1 MHz,

L

Test Circuit 6

Channel-to-Channel Crosstalk –62 dB typ R

–82 dB typ R

= 50 Ω, CL = 5 pF, f = 10 MHz

L

= 50 Ω, CL = 5 pF, f = 1 MHz,

L

Test Circuit 7

Bandwidth –3 dB 200 MHz typ R

(OFF) 7 pF typ

C

S

= 50 Ω, CL = 5 pF, Test Circuit 8

L

CD, CS (ON) 27 pF typ

POWER REQUIREMENTS V

= 5.5 V

DD

Digital Inputs = 0 V or 5 V

I

DD

0.001 µA typ

1.0 µA max

NOTES

1

Temperature ranges are as follows: B Version, –40°C to +85°C.

2

Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

–2–

REV. 0

ADG749

1

SPECIFICATIONS

Parameter 25C +85C Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to V
On Resistance (R

On Resistance Match Between

Channels (∆R

On-Resistance Flatness (R

LEAKAGE CURRENTS

Source OFF Leakage I

Channel ON Leakage I

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V
Input Current

I

or I

INL

INH

DYNAMIC CHARACTERISTICS

t

ON

t

OFF

Break-Before-Make Time Delay, t

Off Isolation –67 dB typ R

Channel-to-Channel Crosstalk –62 dB typ R

Bandwidth –3 dB 200 MHz typ R
C

(OFF) 7 pF typ

S

CD, CS (ON) 27 pF typ

POWER REQUIREMENTS V

I

DD

NOTES

1

Temperature ranges are as follows: B Version, –40°C to +85°C.

2

Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

)67Ω typ VS = 0 V to VDD, IS = –10 mA,

ON

) 0.1 Ω typ VS = 0 V to VDD, IS = –10 mA

ON

2

(OFF) ±0.01 nA typ VS = 3 V/1 V, VD = 1 V/3 V,

S

, IS (ON) ±0.01 nA typ VS = VD = 1 V, or VS = VD = 3 V,

D

INH

INL

(VDD = 3 V  10%, GND = 0 V. All specifications –40C to +85C, unless otherwise noted.)

B Version

–40C to

DD

V

10 Ω max Test Circuit 1

0.8 Ω max

FLAT(ON)

) 2.5 Ω typ VS = 0 V to VDD, IS = –10 mA

VDD = 3.3 V

±0.25 ±0.35 nA max Test Circuit 2

±0.25 ±0.35 nA max Test Circuit 3

2.0 V min

0.4 V max

0.005 µA typ VIN = V

INL

±0.1 µA max

2

16 ns typ RL = 300 Ω, CL = 35 pF

24 ns max V

= 2 V, Test Circuit 4

S

4 ns typ RL = 300 Ω, CL = 35 pF

7 ns max V

D

8 ns typ RL = 300 Ω, CL = 35 pF

1 ns min V

–87 dB typ R

= 2 V, Test Circuit 4

S

= VS2 = 2 V, Test Circuit 5

S1

= 50 Ω, CL = 5 pF, f = 10 MHz

L

= 50 Ω, CL = 5 pF, f = 1 MHz,

L

Test Circuit 6

= 50 Ω, CL = 5 pF, f = 10 MHz

–82 dB typ R

L

= 50 Ω, CL = 5 pF, f = 1 MHz,

L

Test Circuit 7

= 50 Ω, CL = 5 pF, Test Circuit 8

L

= 3.3 V

DD

Digital Inputs = 0 V or 3 V

0.001 µA typ

1.0 µA max

or V

INH

–3–REV. 0

ADG749

WARNING!

ESD SENSITIVE DEVICE

ABSOLUTE MAXIMUM RATINGS

(TA = 25°C unless otherwise noted)

VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V

Analog, Digital Inputs

2

. . . . . . . . . . –0.3 V to VDD + 0.3 V or

1

30 mA, Whichever Occurs First

Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA

(Pulsed at 1 ms, 10% Duty Cycle max)

Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . 30 mA

Operating Temperature Range

Industrial (B Version) . . . . . . . . . . . . . . . . . –40°C to +85°C

Storage Temperature Range . . . . . . . . . . . . . –65°C to +150°C

Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . 150°C

SC70 Package, Power Dissipation . . . . . . . . . . . . . . . . 315 mW

Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 332°C/W

θ

JA

θ

Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 120°C/W

JC

Lead Temperature, Soldering

Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . . . 215°C

Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 220°C

ESD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5 kV

NOTES

1

Stresses above those listed under Absolute Maximum Ratings may cause perma-

nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. Only one absolute
maximum rating may be applied at any one time.

2

Overvoltages at IN, S or D will be clamped by internal diodes. Current should be

limited to the maximum ratings given.

Table I. Truth Table

ADG749 IN Switch S1 Switch S2

0 ON OFF
1 OFF ON

PIN CONFIGURATION

6-Lead SC70

S2

6

5

D

4

S1

V

GND

IN

DD

1

ADG749

2

TOP VIEW

(Not to Scale)

3

TERMINOLOGY

V

DD

Most Positive Power Supply Potential.
GND Ground (0 V) Reference.
S Source Terminal. May be an input or output.
D Drain Terminal. May be an input or output.
IN Logic Control Input.
R

ON

∆R

ON

R

FLAT(ON)

Ohmic resistance between D and S.

On resistance match between any two channels

i.e., R

max – R

ON

ON

min.

Flatness is defined as the difference between the

maximum and minimum value of on resistance as

measured over the specified analog signal range.

(OFF) Source Leakage Current with the switch “OFF.”

I

S

I

, IS (ON) Channel Leakage Current with the switch “ON.”

D

V

) Analog Voltage on Terminals D, S.

D (VS

CS (OFF) “OFF” Switch Source Capacitance.
C

(OFF) “OFF” Switch Drain Capacitance.

D

C

, CS (ON) “ON” Switch Capacitance.

D

t

ON

Delay between applying the digital control input

and the output switching on.
t

OFF

Delay between applying the digital control input

and the output switching off.
t

D

“OFF” time or “ON” time measured between the

90% points of both switches, when switching

from one address state to another.
Crosstalk A measure of unwanted signal that is coupled

through from one channel to another as a result

of parasitic capacitance.
Off Isolation A measure of unwanted signal coupling through

an “OFF” switch.
Bandwidth The frequency at which the output is attenuated

by –3 dBs.
On Response The frequency response of the “ON” switch.
On Loss The voltage drop across the “ON” switch seen on

the On Response vs. Frequency plot as how many

dBs the signal is away from 0 dB at very low

frequencies.

ORDERING GUIDE

Model Temperature Range Package Description Package Option Branding Information*

ADG749BKS –40°C to +85°C SC70 (Plastic Surface Mount) KS-6 SHB

*Brand = Brand on these packages is limited to three characters due to space constraints.

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the ADG749 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.

–4–

REV. 0

Typical Performance Characteristics–

FREQUENCY – Hz

1n

10

I

SUPPLY

– A

100 1k 10k 100k 1M 10M 100M

10n

100n

1

10

100

1m

10m

1

VDD = 5V

6.0

5.5

5.0

4.5

4.0

3.5

– 

3.0

ON

R

2.5

2.0

1.5

1.0

0.5

0

VDD = 3.0V

0 5.00.5

1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

VD OR VS – DRAIN OR SOURCE VOLTAGE – V

TPC 1. On Resistance as a Function of VD (VS) Single
Supplies

VDD = 2.7V

VDD = 5.0V

TA = 25C

VDD = 4.5V

ADG749

TPC 4. Supply Current vs. Input Switching Frequency

6.0

5.5

5.0

4.5

4.0

3.5

– 

3.0

ON

R

2.5

2.0

1.5

1.0

0.5

0

+85C

+25C

–40C

03.00.5
VD OR VS – DRAIN OR SOURCE VOLTAGE – V

1.0 1.5 2.0 2.5

VDD = 3V

TPC 2. On Resistance as a Function of VD (VS) for
Different Temperatures V

6.0

5.5

5.0

4.5

4.0

3.5

– 

3.0

ON

R

2.5

2.0

1.5

1.0

0.5

0

0 5.00.5

1.0 1.5 2.0 2.5 3.0

VD OR VS – DRAIN OR SOURCE VOLTAGE – V

DD

+85C

+25C

–40C

= 3 V

VDD = 5V

3.5 4.0 4.5

TPC 3. On Resistance as a Function of VD (VS) for
Different Temperatures V

= 5 V

DD

–30

VDD = 5V, 3V

–40

–50

–60

–70

–80

–90

OFF ISOLATION – dB

–100

–110

–120

–130

10k 100k 1M 10M 100M

FREQUENCY – Hz

TPC 5. Off Isolation vs. Frequency

–30

–40

–50

–60

–70

–80

–90

CROSSTALK – dB

–100

–110

–120

–130

10k

100k 1M 10M 100M 0

FREQUENCY – Hz

TPC 6. Crosstalk vs. Frequency

0

VDD = 5V, 3V

–5–REV. 0

ADG749

S2

S1

0.1F

V

DD

IN

D

V

DD

GND

R

L

50

V

OUT

V

IN

V

S

ON RESPONSE – dB

0

VDD = 5V

–2

–4

Test Circuits

I

DS

V1

SD

V

S

Test Circuit 1. On Resistance

RON = V1/ I

DS

V

S

V

S1

V

S2

–6

100k 1M 100M

FREQUENCY – Hz

10M10k

TPC 7. On Response vs. Frequency

V

DD

0.1F

V

DD

SD

IN

GND

IS (OFF) ID (OFF)

V

S

SD

A A

Test Circuit 2. Off Leakage

V

R

L

300

C

L

35pF

OUT

SD

V

D

V

S

Test Circuit 3. On Leakage

V

IN

V

OUT

50% 50%

90%

t

ON

90%

t

OFF

ID (ON)

A

V

D

Test Circuit 4. Switching Times

V

DD

0.1F

V

V

S1

S2

IN

V

IN

DD

GND

D

D2

R

L2

300

C

L2

35pF

V

OUT

IN

V

OUT

50% 50%

0V

50% 50%

0V

t

D

t

D

Test Circuit 5. Break-Before-Make Time Delay, t

V

DD

V

DD

0.1F

V

DD

S1

D

S2

V

S

IN

V

IN

Test Circuit 6. Off Isolation

GND

R
50

V

OUT

L

V

OUT

V

S

CHANNEL-TO-CHANNEL
CROSSTALK = 20  LOG |V

Test Circuit 7. Channel-to-Channel Crosstalk

0.1F

V

DD

S1

D

S2

IN

GND

|

S/VOUT

R

L

50

–6–

D

Test Circuit 8. Bandwidth

REV. 0

ADG749

APPLICATIONS INFORMATION

The ADG749 belongs to Analog Devices’ new family of
CMOS switches. This series of general purpose switches have
improved switching times, lower on resistance, higher band­widths, low power consumption and low leakage currents.

ADG749 Supply Voltages

Functionality of the ADG749 extends from 1.8 V to 5.5 V single
supply, which makes it ideal for battery powered instruments,
where important design parameters are power efficiency and
performance.

It is important to note that the supply voltage effects the input
signal range, the on resistance and the switching times of the
part. By taking a look at the typical performance characteristics
and the specifications, the effects of the power supplies can be
clearly seen.

For V

= 1.8 V operation, RON is typically 40 Ω over the tem-

DD

perature range.

On Response vs. Frequency

Figure 1 illustrates the parasitic components that affect the ac
performance of CMOS switches (the switch is shown surrounded
by a box). Additional external capacitances will further degrade
some performance. These capacitances affect feedthrough,
crosstalk and system bandwidth.

C

DS

S

R

V

IN

ON

D

C

D

C

LOAD

R

LOAD

V

OUT

Figure 1. Switch Represented by Equivalent Parasitic
Components

The transfer function that describes the equivalent diagram of
the switch (Figure 1) is of the form (A)s shown below.

A(s) = R



s(RONCDS) + 1



T



s(R

TRONCT



) + 1







where:

R

= R

T

CT = C

LOAD

LOAD

/(R

+ RON)

LOAD

+ CD + C

DS

The signal transfer characteristic is dependent on the switch
channel capacitance, C

. This capacitance creates a frequency

DS

zero in the numerator of the transfer function A(s). Because the
switch on resistance is small, this zero usually occurs at high
frequencies. The bandwidth is a function of the switch output
capacitance combined with C

and the load capacitance. The

DS

frequency pole corresponding to these capacitances appears in
the denominator of A(s).

The dominant effect of the output capacitance, C

, causes the

D

pole breakpoint frequency to occur first. Therefore, in order to
maximize bandwidth a switch must have a low input and output
capacitance and low on resistance. The On Response vs. Fre­quency plot for the ADG749 can be seen in TPC 7.

Off Isolation

Off isolation is a measure of the input signal coupled through an
off switch to the switch output. The capacitance, C

, couples

DS

the input signal to the output load, when the switch is off as
shown in Figure 2.

C

DS

S

V

IN

D

C

D

C

LOAD

R

LOAD

V

OUT

Figure 2. Off Isolation Is Affected by External Load Resis­tance and Capacitance

The larger the value of CDS, larger values of feedthrough will be
produced. The typical performance characteristic graph of TPC
5 illustrates the drop in off isolation as a function of frequency.
From dc to roughly 200 kHz, the switch shows better than
–95 dB isolation. Up to frequencies of 10 MHz, the off isolation
remains better than –67 dB. As the frequency increases, more and
more of the input signal is coupled through to the output. Off
isolation can be maximized by choosing a switch with the small-

as possible. The values of load resistance and capacitance

est C

DS

affect off isolation also, as they contribute to the coefficients of the
poles and zeros in the transfer function of the switch when open.

A(s) =







s(R

LOAD

s(R

)(C

LOADCDS

+ CD+ CDS) + 1

LOAD

)







–7–REV. 0

ADG749

OUTLINE DIMENSIONS

Dimensions shown in inches and (mm).

6-Lead Plastic Surface Mount Package (SC70)

(KS-6)

0.087 (2.20)

0.071 (1.80)

5 4

PIN 1

0.004 (0.10)

0.000 (0.00)

6

1

2

0.051 (1.30)
BSC

0.012 (0.30)

0.006 (0.15)

0.094 (2.40)

0.071 (1.80)

3

0.026 (0.65) BSC

0.043 (1.10)

0.031 (0.80)

SEATING
PLANE

0.007 (0.18)

0.004 (0.10)

8
0

0.053 (1.35)

0.045 (1.15)

0.039 (1.00)

0.031 (0.80)

C02075–2.5–10/00 (rev. 0)

0.012 (0.30)

0.004 (0.10)

–8–

PRINTED IN U.S.A.

REV. 0