Datasheet ADG742BKS, ADG741BKS Datasheet (Analog Devices)

CMOS Low Voltage

IN

S

D

ADG741

IN

S

D

ADG742

SWITCHES SHOWN FOR
A LOGIC "1" INPUT

a

FEATURES

1.8 V to 5.5 V Single Supply
2 ⍀ (Typ) On Resistance
Low On-Resistance Flatness
–3 dB Bandwidth >200 MHz
Rail-to-Rail Operation
6-Lead SC70
Fast Switching Times

18 ns

t

ON

12 ns

t

OFF

Typical Power Consumption (<0.01 ␮W)
TTL/CMOS Compatible

APPLICATIONS
Battery Powered Systems
Communication Systems
Sample Hold Systems
Audio Signal Routing
Video Switching
Mechanical Reed Relay Replacement

2 ⍀ SPST Switches in SC70 Packages

ADG741/ADG742

FUNCTIONAL BLOCK DIAGRAMS

GENERAL DESCRIPTION

The ADG741/ADG742 are monolithic CMOS SPST switches.
These switches are designed on an advanced submicron process
that provides low power dissipation yet high switching speed,
low on resistance, low leakage currents and –3 dB bandwidths of
greater than 200 MHz can be achieved.

The ADG741/ADG742 can operate from a single 1.8 V to 5.5 V
supply, making it ideal for use in battery-powered instruments
and with Analog Devices’ new generation of DACs and ADCs.

As can be seen from the Functional Block Diagrams, with a
logic input of “1” the switch of the ADG741 is closed, while
that of the ADG742 is open. Each switch conducts equally well
in both directions when ON.

The ADG741/ADG742 are available in 6-lead SC70 package.

PRODUCT HIGHLIGHTS

1. 1.8 V to 5.5 V Single Supply Operation. The ADG741/
ADG742 offer high performance, including low on resistance
and fast switching times and is fully specified and guaranteed
with 3 V and 5 V supply rails.

2. Very Low R
operation, R

3. On-Resistance Flatness R

(3 Ω max at 5 V, 5 Ω max at 3 V). At 1.8 V

ON

is typically 40 Ω over the temperature range.

ON

FLAT(ON)

(1 Ω max).

4. –3 dB Bandwidth >200 MHz.

5. Low Power Dissipation. CMOS construction ensures low
power dissipation.

6. Fast t

ON/tOFF.

7. Tiny 6-Lead SC70 package.

REV. 0

Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone] World Wide Web Site: http://www.analog.com
Fax: [phone] © Analog Devices, Inc., 2000

(VDD = 5 V ⴞ 10%, GND = 0 V. All specifications –40ⴗC to +85ⴗC

1

ADG741/ADG742–SPECIFICATIONS

unless otherwise noted.)

B Version

Parameter 25ⴗC –40ⴗC to +85ⴗC Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to V
On Resistance (R

)2 Ω typ VS = 0 V to VDD, IS = –10 mA;

ON

DD

V

34 Ω max Test Circuit 1

On-Resistance Flatness (R

FLAT(ON)

) 0.5 Ω typ VS = 0 V to VDD, IS = –10 mA

1.0 Ω max

LEAKAGE CURRENTS

Source OFF Leakage I

2

(OFF) ±0.01 nA typ VS = 4.5 V/1 V, VD = 1 V/4.5 V;

S

V

= 5.5 V

DD

±0.25 ±0.35 nA max Test Circuit 2

Drain OFF Leakage I

(OFF) ±0.01 nA typ VS = 4.5 V/1 V, VD = 1 V/4.5 V;

D

±0.25 ±0.35 nA max Test Circuit 2

Channel ON Leakage I

, IS (ON) ±0.01 nA typ VS = VD = 1 V, or 4.5 V;

D

±0.25 ±0.35 nA max Test Circuit 3

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V

INL

INH

2.4 V min

0.8 V max

Input Current

I

INL

or I

INH

0.005 µA typ VIN = V

INL

or V

INH

±0.1 µA max

DYNAMIC CHARACTERISTICS

t

ON

t

OFF

Charge Injection 5 pC typ V

2

12 ns typ RL = 300 Ω, CL = 35 pF

18 ns max V

= 3 V; Test Circuit 4

S

8 ns typ RL = 300 Ω, CL = 35 pF

12 ns max V

= 3 V; Test Circuit 4

S

= 2 V, RS = 0 Ω, CL = 1 nF;

S

Test Circuit 5

Off Isolation –55 dB typ R

–75 dB typ R

= 50 Ω, CL = 5 pF, f = 10 MHz

L

= 50 Ω, CL = 5 pF, f = 1 MHz;

L

Test Circuit 6

Bandwidth –3 dB 200 MHz typ R

= 50 Ω, CL = 5 pF;

L

Test Circuit 7

(OFF) 17 pF typ

C

S

C

(OFF) 17 pF typ

D

CD, CS (ON) 38 pF typ

POWER REQUIREMENTS V

= 5.5 V

DD

Digital Inputs = 0 V or 5 V

I

DD

0.001 µA typ

1.0 µA max

NOTES

1

Temperature ranges are as follows: B Versions: – 40°C to +85°C.

2

Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

–2–

REV. 0

ADG741/ADG742

1

SPECIFICATIONS

Parameter 25ⴗC –40ⴗC to +85ⴗC Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to V
On Resistance (R

On-Resistance Flatness (R

LEAKAGE CURRENTS

Source OFF Leakage I

Drain OFF Leakage I

Channel ON Leakage I

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V
Input Current

or I

I

INL

INH

DYNAMIC CHARACTERISTICS

t

ON

t

OFF

Charge Injection 4 pC typ V

Off Isolation –55 dB typ R

Bandwidth –3 dB 200 MHz typ R

C

(OFF) 17 pF typ

S

(OFF) 17 pF typ

C

D

CD, CS (ON) 38 pF typ

POWER REQUIREMENTS V

I

DD

NOTES

1

Temperature ranges are as follows: B Versions: –40°C to +85°C.

2

Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

) 3.5 Ω typ VS = 0 V to VDD, IS = –10 mA;

ON

2

(OFF) ±0.01 nA typ VS = 3 V/1 V, VD = 1 V/3 V;

S

(OFF) ±0.01 nA typ VS = 3 V/1 V, VD = 1 V/3 V;

D

, IS (ON) ±0.01 nA typ VS = VD = 1 V, or 3 V;

D

INH

INL

(VDD = 3 V ⴞ 10%, GND = 0 V. All specifications –40ⴗC to +85ⴗC unless otherwise noted.)

B Version

DD

V

56 Ω max Test Circuit 1

FLAT(ON)

) 1.5 Ω typ VS = 0 V to VDD, IS = –10 mA

V

= 3.3 V

DD

±0.25 ±0.35 nA max Test Circuit 2

±0.25 ±0.35 nA max Test Circuit 2

±0.25 ±0.35 nA max Test Circuit 3

2.0 V min

0.4 V max

0.005 µA typ VIN = V
±0.1 µA max

2

14 ns typ RL = 300 Ω, CL = 35 pF

20 ns max V

= 2 V, Test Circuit 4

S

8 ns typ RL = 300 Ω, CL = 35 pF

13 ns max V

= 2 V, Test Circuit 4

S

= 1.5 V, RS = 0 Ω, CL = 1 nF;

S

Test Circuit 5

= 50 Ω, CL = 5 pF, f = 10 MHz

–75 dB typ R

L

= 50 Ω, CL = 5 pF, f = 1 MHz;

L

Test Circuit 6

= 50 Ω, CL = 5 pF;

L

Test Circuit 7

= 3.3 V

DD

Digital Inputs = 0 V or 3 V

0.001 µA typ

1.0 µA max

INL

or V

INH

–3–REV. 0

ADG741/ADG742

WARNING!

ESD SENSITIVE DEVICE

ABSOLUTE MAXIMUM RATINGS

(TA = 25°C unless otherwise noted)

VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V

Analog, Digital Inputs

2

. . . . . . . . . . . . . . –0.3 V to VDD +0.3 V

1

or 30 mA, Whichever Occurs First

Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . 30 mA

Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA

NOTES

1

Stresses above those listed under Absolute Maximum Ratings may cause perma-

nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute maximum rating condi­tions for extended periods may affect device reliability. Only one absolute maxi­mum rating may be applied at any one time.

2

Overvoltages at IN, S or D will be clamped by internal diodes. Current should be

limited to the maximum ratings given.

(Pulsed at 1 ms, 10% Duty Cycle Max)

Operating Temperature Range

Table I. Truth Table

Industrial (B Version) . . . . . . . . . . . . . . . . . –40°C to +85°C

Storage Temperature Range . . . . . . . . . . . . . –65°C to +150°C

Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . .150°C

SC70 Package

Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 332°C/W

θ

JA

θ

Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 120°C/W

JC

ADG741 In ADG742 In Switch Condition

0 1 OFF
10ON

Lead Temperature, Soldering

Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . . . .215°C

Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .220°C

ESD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5 kV

ORDERING GUIDE

Model Temperature Range Brand* Package Description Package Option

ADG741BKS –40°C to +85°C SFB SC70 KS-6
ADG742BKS –40°C to +85°C SGB SC70 KS-6

*Brand = Brand on these packages is limited to three characters due to space constraints.

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the ADG741/ADG742 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.

–4–

REV. 0

ADG741/ADG742

PIN CONFIGURATIONS

6-Lead Plastic Surface Mount

(SC70)

1

D

ADG741/

2

S

ADG742

TOP VIEW

3

GND

(Not to Scale)

NC = NO CONNECT

6

V

DD

5

NC

IN

4

TERMINOLOGY

V

DD

Most Positive Power Supply Potential.
GND Ground (0 V) Reference.
S Source Terminal. May be an input or output.
D Drain Terminal. May be an input or output.
IN Logic Control Input.
R

ON

R

FLAT(ON)

Ohmic Resistance Between D and S.

Flatness is defined as the difference between

the maximum and minimum value of on

resistance as measured over the specified

analog signal range.

(OFF) Source Leakage Current with the Switch “OFF.”

I

S

I

(OFF) Drain Leakage Current with the Switch “OFF.”

D

I

, IS (ON) Channel Leakage Current with the Switch “ON.”

D

V

) Analog Voltage on Terminals D, S.

D (VS

C

(OFF) “OFF” Switch Source Capacitance.

S

C

(OFF) “OFF” Switch Drain Capacitance.

D

C

, CS (ON) “ON” Switch Capacitance.

D

t

ON

Delay between applying the digital control

input and the output switching on. See Test

Circuit 4.
t

OFF

Delay between applying the digital control

input and the output switching off.
Off Isolation A measure of Unwanted Signal Coupling

Through an “OFF” Switch.
Charge A measure of the glitch impulse transferred

Injection from the digital input to the analog output

during switching.
Bandwidth The frequency at which the output is attenu-

ated by –3 dBs.
On Response The frequency response of the “ON” switch.
On Loss The voltage drop across the “ON” switch seen

on the On Response vs. Frequency plot as how

many dBs the signal is away from 0 dB at very

low frequencies.

–5–REV. 0

ADG741/ADG742

–Typical Performance Characteristics

3.5

VDD = 2.7V

3.0

2.5

2.0

– ⍀

ON

R

1.5

1.0

0.5

0

0 5.00.5

VDD = 3.0V

VDD = 5.0V

1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

VD OR VS – DRAIN OR SOURCE VOLTAGE – V

TA = 25 C

VDD = 4.5V

TPC 1. On Resistance as a Function of VD (VS) Single
Supplies

3.5

3.0

2.5

2.0

– ⍀

ON

R

1.5

1.0

0.5

0

+85ⴗC

+25ⴗC

–40ⴗC

0 0.5

VD OR VS – DRAIN OR SOURCE VOLTAGE – V

1.0 1.5 2.0 2.5 3.0

VDD = 3V

10m

VDD = 5V

1m

100␮

10␮

– A

1␮

SUPPLY

I

100n

10n

1n

100 1k 100k 1M

10 10M10k

FREQUENCY – Hz

TPC 4. Supply Current vs. Input Switching Frequency

–10

VDD = 5V, 3V

–20

–30

–40

–50

–60

–70

OFF ISOLATION – dB

–80

–90

–100

–110

100k 1M 100M

FREQUENCY – Hz

10M10k

TPC 2. On Resistance as a Function of VD (VS) for
Different Temperatures V

3.5

3.0

2.5

+85ⴗC

+25ⴗC

–40ⴗC

1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

– ⍀

R

2.0

ON

1.5

1.0

0.5

0

0 5.00.5

VD OR VS – DRAIN OR SOURCE VOLTAGE – V

= 3 V

DD

VDD = 5V

TPC 3. On Resistance as a Function of VD (VS) for
Different Temperatures V

DD

= 5 V

TPC 5. Off Isolation vs. Frequency

0

VDD = 3V

–2

–4

ON RESPONSE – dB

–6

100k 1M 100M

FREQUENCY – Hz

TPC 6. On Response vs. Frequency

10M10k

–6–

REV. 0

Test Circuits

SD

ADG741/ADG742

I

DS

V1

IS (OFF) ID (OFF)

SD

A A

SD

ID (ON)

A

V

S

RON = V1/I

DS

Test Circuit 1. On Resistance

V

S

V

S

IN

R

S

V

S

Test Circuit 2. Off Leakage

V

DD

0.1␮F

V

DD

SD

GND

Test Circuit 4. Switching Times

V

DD

V

DD

SD

IN

GND

R

L

300⍀

C
1nF

V

D

V

S

V

D

Test Circuit 3. On Leakage

ADG741

V

IN

V

OUT

C

L

35pF

V

OUT

L

V

IN

ADG742

V

OUT

V

IN

ADG741

V

IN

ADG742

V

OUT

50% 50%

50% 50%

90% 90%

t

ON

ON

Q

= CL ⴛ ⌬V

INJ

OUT

⌬V

t

OFF

OUT

OFF

Test Circuit 5. Charge Injection

V

DD

0.1␮F

V

DD

V

R
50⍀

OUT

L

IN

V

V

S

IN

Test Circuit 7. Bandwidth

SD

IN

V

V

S

IN

GND

Test Circuit 6. Off Isolation

V

DD

0.1␮F

V

DD

SD

GND

R
50⍀

V

OUT

L

–7–REV. 0

ADG741/ADG742

APPLICATIONS INFORMATION

The ADG741/ADG742 belongs to Analog Devices’ new fam­ily of CMOS switches. This series of general-purpose switches
have improved switching times, lower on resistance, higher
bandwidth, low power consumption and low leakage currents.

ADG741/ADG742 Supply Voltages

Functionality of the ADG741/ADG742 extends from 1.8 V to

5.5 V single supply, which makes it ideal for battery-powered
instruments, where important design parameters are power
efficiency and performance.

It is important to note that the supply voltage effects the input
signal range, the on resistance, and the switching times of the
part. By looking at the typical performance characteristics
and the specifications, the effects of the power supplies can
be clearly seen.

For V

= 1.8 V operation, RON is typically 40 Ω over the tem-

DD

perature range.

On Response vs. Frequency

Figure 1 illustrates the parasitic components that affect the ac
performance of CMOS switches (the switch is shown surrounded
by a box). Additional external capacitances will further degrade
some performance. These capacitances affect feedthrough,
crosstalk and system bandwidth.

C

DS

S

R

ON

C

V

IN

D

C

D

LOAD

R

LOAD

V

OUT

Figure 1. Switch Represented by Equivalent Parasitic
Components

The transfer function that describes the equivalent diagram of
the switch (Figure 1) is of the form (A)s shown below.

A(s) = R



s(RONCDS) + 1



T



s(R

ONCTRT



) + 1







where:

= C

C

T

RT = R

LOAD

LOAD

+ CD + C

/(R

LOAD

+ RON)

DS

OUTLINE DIMENSIONS

Dimensions shown in inches and (mm).

6-Lead Plastic Surface Mount

(SC70)

0.087 (2.20)

0.071 (1.80)

The signal transfer characteristic is dependent on the switch
channel capacitance, C

. This capacitance creates a frequency

DS

zero in the numerator of the transfer function A(s). Because the
switch on resistance is small, this zero usually occurs at high
frequencies. The bandwidth is a function of the switch output
capacitance combined with C

and the load capacitance. The

DS

frequency pole corresponding to these capacitances appears in
the denominator of A(s).

The dominant effect of the output capacitance, C

, causes the

D

pole breakpoint frequency to occur first. Therefore, in order to
maximize bandwidth a switch must have a low input and output
capacitance and low on resistance. The On Response vs. Fre­quency plot for the ADG741/ADG742 can be seen in TPC 6.

Off Isolation

Off isolation is a measure of the input signal coupled through an
off switch to the switch output. The capacitance, C

, couples

DS

the input signal to the output load, when the switch is off, as
shown in Figure 2.

C

DS

S

C

V

IN

D

C

D

LOAD

R

LOAD

V

OUT

Figure 2. Off Isolation Is Affected by External Load Resis­tance and Capacitance

The larger the value of CDS, larger values of feedthrough will be
produced. The typical performance characteristic graph of TPC 5
illustrates the drop in off-isolation as a function of frequency. From
dc to roughly 1 MHz, the switch shows better than –75 dB isola­tion. Up to frequencies of 10 MHz, the off isolation remains better
than –55 dB. As the frequency increases, more and more of the
input signal is coupled through to the output. Off-isolation can be
maximized by choosing a switch with the smallest C

as possible.

DS

The values of load resistance and capacitance affect off isolation
also, as they contribute to the coefficients of the poles and zeros
in the transfer function of the switch when open.

A(s) =





s(R

s(R

LOADCDS

)( CT) +1

LOAD



)




C02076–2.5–10/00 (rev.0)

0.053 (1.35)

0.045 (1.15)

PIN 1

0.039 (1.00)

0.031 (0.80)

0.004 (0.10)

0.000 (0.00)

5 4

6

1

2

0.051 (1.30)
BSC

0.012 (0.30)

0.006 (0.15)

0.094 (2.40)

0.071 (1.80)

3

0.026 (0.65) BSC

0.043 (1.10)

0.031 (0.80)

SEATING
PLANE

–8–

0.007 (0.18)

0.004 (0.10)

8ⴗ
0ⴗ

PRINTED IN U.S.A.

0.012 (0.30)

0.004 (0.10)

REV. 0