0.5 On Resistance Flatness
100 pA Leakage Currents
19 ns Switching Times
Triple SPDT: ADG733
Quad SPDT: ADG734
Small TSSOP and QSOP Packages
Low Power Consumption
TTL/CMOS Compatible Inputs
APPLICATIONS
Data Acquisition Systems
Communication Systems
Relay Replacement
Audio and Video Switching
Battery Powered Systems
S1B
S1A
S2A
S2B
Triple/Quad SPDT Switches
ADG733/ADG734
FUNCTIONAL BLOCK DIAGRAMS
ADG733
D1
D2
LOGIC
A2
A0
A1
EN
SWITCHES SHOWN FOR A “1” INPUT LOGIC
S3A
D3
S3B
S1A
S1B
IN1
IN2
S2B
S2A
S4A
D1
ADG734
D2
D2
S4B
IN4
IN3
S3B
D3
S3A
GENERAL DESCRIPTION
The ADG733 and ADG734 are low voltage, CMOS devices
comprising three independently selectable SPDT (single pole,
double throw) switches and four independently selectable SPDT
switches respectively.
Low power consumption and operating supply range of 1.8 V to
5.5 V and dual ±2.5 V make the ADG733 and ADG734 ideal for
battery powered, portable instruments. All channels exhibit
break-before-make switching action preventing momentary
shorting when switching channels. An EN input on the ADG733 is
used to enable or disable the device. When disabled, all channels
are switched OFF.
These 2–1 multiplexers/SPDT switches are designed on an
enhanced submicron process that provides low power dissipation
yet gives high switching speed, very low on resistance, high signal
bandwidths, and low leakage currents. On resistance is in the
region of a few ohms, is closely matched between switches, and is
very flat over the full signal range. These parts can operate equally
well in either direction and have an input signal range that extends
to the supplies.
The ADG733 is available in small TSSOP and QSOP packages,
while the ADG734 is available in a small TSSOP package.
PRODUCT HIGHLIGHTS
1. Single/Dual Supply Operation. The ADG733 and ADG734 are
fully specified and guaranteed with 3 V and 5 V single supply
rails and ±2.5 V dual supply rails.
2. Low On Resistance (2.5 Ω typical)
3. Low Power Consumption (<0.01 µW)
4. Guaranteed Break-Before-Make Switching Action
REV. A
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices.
IR Reflow, Peak Temperature (<20 sec) . . . . . . . . . . . . 235°C
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. Only one absolute
maximum rating may be applied at any one time.
2
Overvoltages at A, EN, IN, S, or D will be clamped by internal diodes. Current
should be limited to the maximum ratings given.
Storage Temperature Range . . . . . . . . . . . . –65°C to +150°C
ADG733BRU–40°C to +85°CThin Shrink Small Outline Package (TSSOP)RU-16
ADG733BRQ–40°C to +85°CQuarter Size Outline Package (QSOP)RQ-16
ADG734BRU–40°C to +85°CThin Shrink Small Outline Package (TSSOP)RU-20
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the ADG733/ADG734 feature proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper
ESD precautions are recommended to avoid performance degradation or loss of functionality.
Most Positive Power Supply Potential
Most Negative Power Supply in a Dual Supply Application. In single supply applications, this should be tied to
ground close to the device.
I
DD
I
SS
Positive Supply Current
Negative Supply Current
GNDGround (0 V) Reference
SSource Terminal. May be an input or output.
DDrain Terminal. May be an input or output.
A
X
Logic Control Input
ENActive low device enable
V
(VS)Analog Voltage on Terminals D and S
D
R
ON
∆R
ON
R
FLAT(ON)
Ohmic Resistance between D and S
On Resistance Match between any Two Channels (i.e., RONmax and RONmin)
Flatness is defined as the difference between the maximum and minimum value of on resistance as measured over
the specified analog signal range.
I
(OFF)Source Leakage Current with the Switch “OFF”
S
I
, IS (ON)Channel Leakage Current with the Switch “ON”
D
V
INL
V
INH
I
INL(IINH
C
C
C
t
ON
t
OFF
t
ON
t
OFF
t
OPEN
)Input Current of the Digital Input
(OFF)“OFF” Switch Source Capacitance. Measured with reference to ground.
S
, CS(ON)“ON” Switch Capacitance. Measured with reference to ground.
D
IN
(EN)Delay Time between the 50% and 90% Points of the EN Digital Input and the Switch “ON” Condition
(EN)Delay Time between the 50% and 90% Points of the EN Digital Input and the Switch “OFF” Condition
Maximum Input Voltage for Logic “0”
Minimum Input Voltage for Logic “1”
Digital Input Capacitance
Delay Time Measured between the 50% and 90% Points of the Digital Inputs and the Switch “ON” Condition
Delay Time Measured between the 50% and 90% Points of the Digital Input and the Switch “OFF” Condition
“OFF” Time Measured between the 80% Points of Both Switches when Switching from One Address State to
Another
ChargeA Measure of the Glitch Impulse Transferred Injection from the Digital Input to the Analog Output during Switching
Off IsolationA Measure of Unwanted Signal Coupling through an “OFF” Switch.
CrosstalkA Measure of Unwanted Signal that Is Coupled through from One Channel to Another as a Result of Para-
sitic Capacitance
On ResponseThe Frequency Response of the “ON” Switch
Insertion LossThe Loss Due to the On Resistance of the switch
–6–
REV. A
Page 7
Typical Performance Characteristics–ADG733/ADG734
TEMPERATURE – C
0.25
5
CURRENT – nA
V
DD
= +2.5V
V
SS
= –2.5V
V
D
= +2.25V/–1.25V
V
S
= –1.25V/+2.25V
V
DD
= 5V
V
SS
= GND
V
D
= 4.5V/1.0V
V
S
= 1.0V/4.5V
IS, ID (ON)
IS (OFF)
0.20
0.15
0.10
0.05
0
–0.05
2035506580
–0.10
8
7
6
5
4
3
ON RESISTANCE –
2
1
0
01234
VD, VS, DRAIN OR SOURCE VOLTAGE – V
VDD = 2.7V
VDD = 3.3V
TA = 25C
V
VDD = 4.5V
VDD = 5.5V
= 0V
SS
5
TPC 1. On Resistance as a Function of
VD (VS) for Single Supply
8
7
6
5
4
3
ON RESISTANCE –
2
1
0
00.5
VD OR VS – DRAIN OR SOURCE VOLTAGE – V
–40C
1.01.52.02.53.0
+85C
+25C
VDD = 3V
= 0V
V
SS
TPC 4. On Resistance as a Function of
(VS) for Different Temperatures,
V
D
Single Supply
8
7
6
5
4
3
ON RESISTANCE –
2
1
0
–3–2–102
VD, VS, DRAIN OR SOURCE VOLTAGE – V
VDD = +2.5V
= –2.5V
V
SS
1
TA = 25C
3
TPC 2. On Resistance as a Function of
VD (VS) for Dual Supply
8
7
6
5
4
+85C
3
ON RESISTANCE –
2
–40C
1
0
–3–2–102
VD, VS, DRAIN OR SOURCE VOLTAGE – V
VDD = +2.5V
= –2.5V
V
SS
+25C
1
3
TPC 5. On Resistance as a Function of
(VS) for Different Temperatures,
V
D
Dual Supply
8
7
6
5
4
+85C
3
ON RESISTANCE –
2
–40C
1
0
1
02
VD, OR VS DRAIN OR SOURCE VOLTAGE – V
+25C
3
VDD = 5V
= 0V
V
SS
45
TPC 3. On Resistance as a Function of
(VS) for Different Temperatures,
V
D
Single Supply
0.1
0.05
IS, ID (ON)
0
–0.05
CURRENT – nA
–0.1
–0.15
0123 5
V
S
IS (OFF)
,
(V
D
=
V
DD
–
VS) – V
VDD = 5V
= GND
V
SS
= 25C
T
A
4
TPC 6. Leakage Currents as a
Function of V
(VS)
D
0.10
0.08
0.06
0.04
00.5
IS, ID (ON)
IS (OFF)
1.01.52.02.53.0
,
V
(V
S
D
0.02
0
–0.02
CURRENT – nA
–0.04
–0.06
–0.08
–0.10
TPC 7. Leakage Currents as a
Function of VD (VS)
REV. A
VDD = 3V
= GND
V
SS
= 25C
T
A
=
–
V
VS) – V
DD
0.15
0.10
0.05
0
CURRENT – nA
–0.05
–0.10
–0.15
–3–2
IS, ID (ON), VD = V
IS (OFF)
–10123
VS, (VD = VDD –VS) – V
TPC 8. Leakage Currents as a
Function of V
(VS)
D
VDD = +2.5V
= –2.5V
V
SS
= 25C
T
A
S
TPC 9. Leakage Currents as a
Function of Temperature
–7–
Page 8
ADG733/ADG734
0.25
0.20
0.15
0.10
0.05
CURRENT – nA
–0.05
–0.10
IS, ID (ON)
0
5
IS (OFF)
2035506580
TEMPERATURE – C
VDD = 3V
= GND
V
SS
= 2.7V/1V
V
D
= 1V/2.7V
V
S
TPC 10. Leakage Currents as a
Function of Temperature
10m
1m
100
10
CURRENT – A
1
100n
VDD = +2.5V
= –2.5V
V
SS
VSS = 3V
V
VDD = 5V
= GND
V
SS
= GND
DD
TA = 25C
40
35
30
25
20
TIME – ns
15
10
5
0
–20
TPC 11. tON/t
Temperature
0
–20
–40
–60
–80
ATTENUATION – dB
–100
VSS = GND
tON, VDD = 3V
tON, VDD = 5V
t
, VDD = 3V
OFF
t
, VDD = 5V
OFF
020406080
TEMPERATURE – C
Times vs.
OFF
VDD = 5V
= 25C
T
A
0
–2
VDD = 5V
–4
T
= 25C
A
–6
–8
–10
ONRESPONSE–dB
–12
–14
–16
100k1M100M
FREQUENCY–HZ
10M10k
TPC 12. On Response vs. Frequency
0
–20
–40
–60
–80
ATTENUATION – dB
–100
VDD = 5V
= 25C
T
A
10n
0.1
110100100010000
FREQUENCY – kHz
TPC 13. Input Current, IDD vs.
Switching Frequency