1.8 V to 5.5 V Single Supply
±2.5 V Dual Supply Operation
ΩΩ
3.5
Ω On Resistance
ΩΩ
ΩΩ
0.5
Ω On Resistance Flatness
ΩΩ
Rail to Rail Operation
30ns Switching Times
Single 32 to 1 Channel Multiplexer
Dual/Differential 16 to 1 Channel Multiplexer
TTL/CMOS Compatible Inputs
For Functionally Equivalent devices with Serial Interface
See ADG725/ADG731
APPLICATIONS
Optical Applications
Data Acquisition Systems
Communication Systems
Relay replacement
Audio and Video Switching
Battery Powered Systems
Medical Instrumentation
Automatic Test Equipment
S32
WR
CS
16-/32- Channel, 3.5
ΩΩ
Ω
ΩΩ
ADG726/ADG732
FUNCTIONAL BLOCK DIAGRAMS
ADG732
S1
1 OF 32
DECODER
EN
A2A4
A0
A3
A1
S1A
S16A
D
S1B
S16B
WR
CSA
CSB
ADG726
A1
A0
1 OF 16
DECODER
A2
DA
DB
A3
EN
GENERAL DESCRIPTION
The ADG726/ADG732 are monolithic CMOS 32
channel/dual 16 channel analog multiplexers. The
ADG732 switches one of thirty-two inputs (S1-S32) to a
common output, D, as determined by the 5-bit binary
address lines A0, A1, A2, A3 and A4. The ADG726
switches one of sixteen inputs as determined by the four
bit binary address lines, A0, A1, A2 and A3.
On chip latches facilitate microprocessor interfacing. The
ADG726 device may also be configured for differential
operation by tying CSA and CSB together. An EN input
is used to enable or disable the devices. When disabled, all
channels are switched OFF.
These multiplexers are designed on an enhanced submicron process that provides low power dissipation yet gives
high switching speed, very low on resistance and leakage
currents. They operate from single supply of 1.8V to 5.5V
and ±2.5 V dual supply, making them ideally suited to a
variety of applications. On resistance is in the region of a
few Ohms and is closely matched between switches and
very flat over the full signal range. These parts can operate
equally well as either Multiplexers or De-Multiplexers
and have an input signal range which extends to the supplies. In the OFF condition, signal levels up to the
supplies are blocked. All channels exhibit break before
make switching action preventing momentary shorting
when switching channels.
They are available in either 48 lead LFCSP or TQFP
package.
PRODUCT HIGHLIGHTS
1.+1.8 V to +5.5 V Single or ±2.5 V Dual Supply
operation. These parts are specified and guaranteed
with +5 V ±10%, +3 V ±10% single supply and
±2.5 V ±10% dual supply rails.
2.On Resistance of 3.5 Ω.
3.Guaranteed Break-Before-Make Switching Action.
4.7mm x 7mm 48 lead LF Chip Scale Package (CSP)
or 48 lead TQFP package.
REV. PrD 2001
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700World Wide Web Site: http://www.analog.com
Fax: 781/326-8703Analog Devices, Inc., 2001
PRELIMINARY TECHNICAL DA T A
1
ADG726/ADG732–SPECIFICATIONS
B Version
–40°C
Parameter+25oCto +85°CUnits Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to V
On-Resistance (R
On-Resistance Match Between0.3Ω typV
Channels (∆R
On-Resistance Flatness (R
LEAKAGE CURRENTSV
Source OFF Leakage I
Drain OFF Leakage I
Channel ON Leakage I
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
Input Current
or I
I
INL
INH
CIN, Digital Input Capacitance5pF typ
DYNAMIC CHARACTERISTICS
t
TRANSITION
Break-Before-Make Time Delay, t
t
(EN, WR)32ns typR
ON
(EN)10ns typR
t
OFF
Charge Injection±5pC typV
Off Isolation-60dB typR
Channel to Channel Crosstalk-60dB typR
-3 dB Bandwidth10MHz typR
(OFF)13pF typf = 1 MHz
C
S
C
(OFF)
D
ADG726180pF typf = 1 MHz
ADG732360pF typf = 1 MHz
, CS (ON)
C
D
ADG726200pF typf = 1 MHz
ADG732400pF typf = 1 MHz
POWER REQUIREMENTSV
I
DD
NOTES
1
Temperature range is as follows: B Version: –40°C to +85°C.
2
Guaranteed by design, not subject to production test.
(VDD = +2.5 V ±10%, VSS = -2.5 V ±10%, GND = 0 V, unless otherwise noted)
B Version
–40°C
Parameter+25oCto +85°CUnits Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range VSS to V
On-Resistance (R
On-Resistance Match Between0.3Ω typV
Channels (∆R
On-Resistance Flatness (R
LEAKAGE CURRENTSV
Source OFF Leakage I
Drain OFF Leakage I
Channel ON Leakage I
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
Input Current
or I
I
INL
INH
CIN, Digital Input Capacitance5pF typ
DYNAMIC CHARACTERISTICS
t
TRANSITION
Break-Before-Make Time Delay, t
t
(EN, WR)32ns typR
ON
(EN)16ns typR
t
OFF
Charge Injection±8pC typV
Off Isolation-60dB typR
Channel to Channel Crosstalk-60dB typR
-3 dB Bandwidth10MHz typR
C
(OFF)13pF typ
S
(OFF)
C
D
ADG726180pF typf = 1 MHz
ADG732360pF typf = 1 MHz
, CS (ON)
C
D
ADG726200pF typf = 1 MHz
ADG732400pF typf = 1 MHz
POWER REQUIREMENTSV
I
DD
I
SS
NOTES
1
Temperature range is as follows: B Version: –40°C to +85°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
)3.5Ω typV
ON
5.56Ω maxTest Circuit 1
)0.8Ω max
ON
FLAT(ON)
)0.5Ω typV
1.2Ω max
(OFF)±0.01nA typ
S
±1±5nA maxTest Circuit 2
(OFF)±0.01nA typ
D
±1±5nA maxTest Circuit 3
, IS (ON)±0.01nA typ
D
±1±10nA max
INH
INL
1.7V min
0.7V max
0.005µA typVIN = V
±0.1µA max
2
40ns typR
60ns maxV
15ns typR
D
1ns minV
50ns maxV
26ns maxV
10µA typDigital Inputs = 0 V or +2.75 V
20µA max
10µA typVSS = -2.75 V
20µA maxDigital Inputs = 0 V or +2.75 V
Dual Supply
DD
V
= VSS to VDD, IDS = 10 mA;
S
= VSS to VDD, IDS = 10 mA
S
= VSS to VDD, IDS = 10 mA
S
= +2.75 V, VSS = -2.75 V
DD
VS = +2.25 V/-1.25 V, VD = -1.25 V/+2.25 V;
VS = +2.25 V/-1.25 V, VD = -1.25 V/+2.25 V;
VS = VD = +2.25 V/-1.25 V, Test Circuit 4
or V
INL
= 300 Ω, C
L
= 1.5 V/0 V,V
S1
= 300 Ω, C
L
= 1.5 V, Test Circuit 6
S
= 300 Ω, C
L
= 1.5 V, Test Circuit 7
S
= 300 Ω, C
L
= 1.5 V, Test Circuit 8
S
= 0 V, R
S
= 50 Ω, C
L
INH
= 35 pF Test Circuit 5
L
= 0 V/1.5 V
S32
= 35 pF;
L
= 35 pF;
L
= 35 pF;
L
= 0 Ω, C
S
= 5 pF, f = 1 MHz;
L
= 1 nF; Test 9
L
Test Circuit 10
= 50 Ω, C
L
= 5 pF, f = 1 MHz;
L
Test Circuit 11
= 50 Ω, C
L
= +2.75 V
DD
= 5 pF, Test Circuit 10
L
–4–REV. PrD
PRELIMINARY TECHNICAL DA T A
ADG726/ADG732
TIMING CHARACTERISTICS
ParameterLimit at T
t
1
t
2
t
3
t
4
t
5
t
6
NOTES
1
See Figure 1.
2
All input signals are specified with tr =tf = 5ns (10% to 90% of VDD) and timed from a voltage level of (VIL + VIH)/2.
3
Guaranteed by design and characterisation, not production tested.
Specifications subject to change without notice.
0ns minCS to WR Setup Time
0ns minCS to WR Hold Time
20ns minWR pulse width
10ns minTime between WR cycles
5ns minAddress, Enable Setup Time
2ns minAddress, Enable Hold Time
MIN
1,2, 3
, T
MAX
CS
WR
A0, A1, A2, A3, (A4)
EN
UnitsConditions/Comments
t
1
t
3
t
5
t
2
t
4
t
6
Figure 1. Timing Diagram
Figure 1 shows the timing sequence for latching the switch address and enable inputs. The latches are level sensitive;
therefore, while WR is held low, the latches are transparent and the switches respond to the address and enable inputs.
This input data is latched on the rising edge of WR. The ADG726 has two CS inputs. This enables the part to be used
either as a dual 16-1 channel multiplexer or a differential 16 channel multiplexer. If a differential output is required, tie
CSA and CSB together.
–5–REV. PrD
ADG726/ADG732
PRELIMINARY TECHNICAL DA T A
ABSOLUTE MAXIMUM RATINGS
(TA = +25°C unless otherwise noted)
VDD to V
V
DD
V
SS
Analog Inputs
Digital Inputs
SS
to GND–0.3 V to +7 V
to GND+0.3 V to -7 V
2
2
30 mA, Whichever Occurs First
30 mA, Whichever Occurs First
Peak Current, S or D60mA
(Pulsed at 1 ms, 10% Duty Cycle max)
Continuous Current, S or D30mA
Operating Temperature Range
Industrial (B Version)–40°C to +85°C
1
+7 V
VSS - 0.3 V to VDD +0.3 Vor
-0.3V to VDD +0.3 V or
Storage Temperature Range–65°C to +150°C
Junction Temperature+150°C
48 lead CSP θ
48 lead TQFP θ
Thermal ImpedanceTBD°C/W
JA
Thermal ImpedanceTBD°C/W
JA
Lead Temperature, Soldering (10seconds)300°C
IR Reflow, Peak Temperature+220°C
NOTES
1
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent
damage to the device. This is a stress rating only and functional operation of the device
at these or any other conditions above those listed in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability. Only one absolute maximum rating may
be applied at any one time.
2
Overvoltages at A, WR, RS, S or D will be clamped by internal diodes. Current should
be limited to the maximum ratings given.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the ADG726/ADG732 features proprietary ESD protection circuitry, permanent damage
may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
XXXXX11L->HRetains previous switch condition
XXXXX11XNo Change in Switch condition
XXXX1000NONE
00000000S1A - DA, S1B - DB
00010000S2A - DA, S2B - DB
00100000S3A - DA, S3B - DB
00110000S4A - DA, S4B - DB
01000000S5A - DA, S5B - DB
01010000S6A - DA, S6B - DB
01100000S7A - DA, S7B - DB
01110000S8A - DA, S8B - DB
10000000S9A - DA, S9B - DB
10010000S10A - DA, S10B - DB
10100000S11A - DA, S11B - DB
10110000S12A - DA, S12B - DB
11000000S13A - DA, S13B - DB
11010000S14A - DA, S14B - DB
11100000S15A - DA, S15B - DB
11110000S16A - DA, S16B - DB
GN DGround (0 V) reference.
SSource terminal. May be an input or output.
DDrain terminal. May be an input or output.
INLogic control input.
)Analog voltage on terminals D, S
V
D (VS
R
ON
∆R
ON
R
FLAT(ON)
I
(OFF)Source leakage current with the switch “OFF.”
S
I
(OFF)Drain leakage current with the switch “OFF.”
D
, IS (ON)Channel leakage current with the switch “ON.”
I
D
V
INL
V
INH
I
INL(IINH
(OFF)“OFF” switch source capacitance. Measured with reference to ground.
C
S
(OFF)“OFF” switch drain capacitance. Measured with reference to ground.
C
D
(ON)“ON” switch capacitance. Measured with reference to ground.
C
D,CS
C
IN
t
TRANSITION
t
(EN)Delay time between the 50% and 90% points of the EN digital input and the switch “ON” condition.
ON
(EN)Delay time between the 50% and 90% points of the EN digital input and the switch “OFF” condition.
t
OFF
t
OPEN
ChargeA measure of the glitch impulse transferred from the digital input to the analog output during switching.
Injection
Off Isolation A measure of unwanted signal coupling through an “OFF” switch.
CrosstalkA measure of unwanted signal is coupled through from one channel to another as a result of parasitic
On Response The Frequency response of the “ON” switch.
InsertionThe loss due to the ON resistance of the switch.
Loss
Most positive power supply potential.
Most Negative power supply in a dual supply application. In single supply applications, connect to GND.
Positive supply current.
Negative supply current.
Ohmic resistance between D and S.
On resistance match between any two channels, i.e. RONmax - RONmin
Flatness is defined as the difference between the maximum and minimum value of on-resistance as mea
sured over the specified analog signal range.
Maximum input voltage for logic “0”.
Minimum input voltage for logic “1”.
)Input current of the digital input.
Digital input capacitance.
Delay time measured between the 50% and 90% points of the digital inputs and the switch “ON” condi
tion when switching from one address state to another.
“OFF” time measured between the 80% points of both switches when switching from one address state to
another.
capacitance.
–8–REV. PrD
PRELIMINARY TECHNICAL DA T A
TYPICAL PERFORMANCE CHARACTERISTICS
ADG726/ADG732
TBD
TPC 1. On Resistance as a Function of
V
) for for Single Supply
D(VS
TBD
TPC 2. On Resistance as a Function of
VD(VS) for Dual Supply
TBD
TPC 4. On Resistance as a Function of
V
) for Different Temperatures,
D(VS
Single Supply
TBD
TPC 5. On Resistance as a Function of
VD(VS) for Different Temperatures,
Dual Supply
TBD
TPC 7. Leakage Currents as a function
of VD(VS)
TBD
TPC 8. Leakage Currents as a function
of VD(VS)
TBD
TPC 3. On Resistance as a Function of
VD(VS) for Different Temperatures,
Single Supply
TBD
TPC 6. Leakage Currents as a function
of VD(VS)
–9–REV. PrD
TBD
TPC 9. Leakage Currents as a function
of Temperature
ADG726/ADG732
PRELIMINARY TECHNICAL DA T A
TBD
TPC 10. Leakage Currents as a
Function of Temperature
TBD
TPC 11. Supply Currents vs. Input
Switching Frequency
TBD
TPC 13. TON/T
Temperature
Times vs.
OFF
TBD
TPC 14. Off Isolation vs. Frequency
TBD
TPC 16. On Response vs. Frequency
TBD
TPC 12. Charge Injection vs. Source
Voltage
TBD
TPC 15. Crosstalk vs. Frequency
–10–REV. PrD
Test Circuits
D
Test Circuit 1. On Resistance.
IS(OFF)
V
S
PRELIMINARY TECHNICAL DA T A
ADG726/ADG732
I
DS
V
V
V1
S
V
S
RON = V1/I
D
V
S
DS
V
S1
S2
S32
Test Circuit 3. I
V
S1
S32
DD
V
DD
V
V
DD
SS
V
V
DD
GND
SS
D
+0.8V
EN
V
S
S1
S2
S32
V
D
SS
DD
V
SS
DD
I
(OFF)
D
D
A
V
V
D
GND
GND
+0.8V
EN
(OFF)
D
V
SS
V
SS
EN
D
+2.4V
ID(ON)
A
Test Circuit 2. IS (OFF).
V
IN
V
IN
Ω
50
* SIMILAR CONNECTION FOR ADG726
50
Ω
*SIMILAR CONNECTION FOR ADG726
V
DD
V
DD
A4
S2 THRU S31
A0
ADG732*
EN
CS
V
DD
V
DD
A4
S2 THRU S31
ADG732*
A0
ENGND
CS
V
GND
SS
V
SS
S1
S32
WR
V
S1
V
S32
D
R
L
300
C
L
35pF
Ω
V
DRIVE (VIN)
OUT
ADDRESS
V
OUT
3V
0V
V
S1
V
S32
Test Circuit 5. Switching Time of Multiplexer, t
V
SS
V
SS
S1
S32
D
WR
R
300
V
S
V
OUT
C
L
L
35pF
Ω
ADDRESS
DRIVE (V
3V
)
IN
0V
V
S
V
OUT
Test Circuit 4. I
50%
90%
t
TRANSITION
TRANSITION
80%
t
OPEN
.
80%
(ON)
D
50%
t
TRANSITION
90%
Test Circuit 6. Break Before Make Delay, t
OPEN
.
–11–REV. PrD
ADG726/ADG732
V
V
EN
PRELIMINARY TECHNICAL DA T A
V
V
DD
SS
V
V
DD
A4
A0
CS
WR
CS
V
WR
*SIMILAR CONNECTION FOR ADG726
SS
S1
S2 THRU S32
ADG732*
D
EN GND
Test Circuit 7. Write Turn-On and Turn Off Time, t
V
V
DD
SS
V
V
DD
S2 THRU S32
ADG732*
GND
CS
SS
WR
S1
V
D
R
L
300
A4
A0
EN
R
300
S
V
S
V
OUT
C
L
L
35pF
Ω
V
OUT
C
L
35pF
Ω
SWITCH
OUTPUT
WR
SWITCH
OUTPUT
(WR).
3V
EN
0V
V
0V
3V
0V
V
O
0V
O
90%
t
ON
50%
50%
(EN)
ON
t
ON
t
OFF
(WR)
(WR)
, t
OFF
t
OFF
20%
80%
50%
(EN)
10%
*SIMILAR CONNECTION FOR ADG726
R
S
V
S
V
IN
*SIMILAR CONNECTION FOR ADG726
V
V
DD
SS
V
A4
V
SS
DD
GND
S1
S32
D
WR
A0
EN**
CS
ADG732*
Test Circuit 8. Enable Delay, tON(EN), t
V
V
DD
SS
V
V
DD
SS
A4
ADG732*
A0
S
EN
+2.4V
RS
D
C
1nF
V
OUT
L
LOGIC
INPUT (VIN)
V
OUT
3V
0V
OFF
(EN)
Q
INJ
= CL x ∆ V
OUT
V
∆
OUT
Test Circuit 9. Charge Injection.
V
V
DD
SS
S1
V
A4
V
A0
DD
ADG732*
GND
CS
SS
S2
S32
WR
50
Ω
D
NETWORK
ANALYZER
50
Ω
V
OUT
R
L
50
Ω
V
S
NETWORK
ANALYZER
50
Ω
V
V
OUT
R
L
50
Ω
S
EN
*SIMILAR CONNECTION FOR ADG726
** CONNECT TO 2.4V FOR CROSSTALK MEASUREMENTS
OFF ISOLATION = 20LOG10(V
INSERTION LOSS = 20LOG
10
)
OUT/VS
V
WITH SWITCH
OUT
(
V
WITHOUT SWITCH
OUT
)
Test Circuit 10. OFF Isolation and Bandwidth.
*SIMILAR CONNECTION FOR ADG726
CH ANNEL TO CHA NNEL CRO SSTALK =
20LOG10(V
OUT/VS
)
Test Circuit 11. Channel-to-Channel Crosstalk.
–12–REV. PrD
PRELIMINARY TECHNICAL DA T A
OUTLINE DIMENSIONS
Dimensions shown in inches and (mm).
48-Lead CSP
(CP-48)
0.024 (0.60)
0.017 (0.42)
0.009 (0.24)
3748
36
BOTTOM
VIEW
PIN 1
INDICATOR
0.276(7.0)
BSC SQ
TOP
VIEW
0.024 (0.60)
0.017 (0.42)
0.009 (0.24)
0.266 (6.75)
BSC SQ
ADG726/ADG732
0.010 (0.25)
MIN
1
0.207 (5.25)
0.201 (5.10) SQ
0.195 (4.95)
0.035 (0.90) MAX
0.033 (0.85) NOM
0.020 (0.50)
0.016 (0.40)
0.012 (0.30)
o
MAX
12
0.012 (0.30)
0.009 (0.23)
0.007 (0.18)
0.020 (0.50)
BSC
0.028 (0.70) MAX
0.026 (0.65) NOM
0.002 (0.05)
0.008(0.20)
0.0004 (0.01)
REF
0.0 (0.0)
CONTROLLING DIMENSIONS ARE IN MILLIMETERS
48-Lead TQFP
(SU-48)
0.030 (0.75)
0.018 (0.45)
SEATING
PLANE
0.006 (0.15)
0.002 (0.05)
0° – 7
0.047 (1.20) MAX
0.041 (1.05)
0.037 (0.95)
°
0.008 (0.20)
0.004 (0.09)
0° MIN
0.354 (9.00) BSC
48
1
12
13
0.019 (0.5)
BSC
25
0.276 (7.0) BSC
TOP VIEW
(PINS DOWN)
0.011 (0.27)
0.006 (0.17)
24
0.217 (5.5)
REF
37
36
25
24
12
13
0.276 (7.0) BSC
0.354 (9.00) BSC
–13–REV. PrD
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