Datasheet ADG719 Datasheet (Analog Devices)

CMOS 1.8 V to 5.5 V, 2.5 

a

FEATURES

1.8 V to 5.5 V Single Supply
4  (Max) On Resistance

0.75  (Typ) On Resistance Flatness
Automotive Temperature Range: –40°C to +125°C
–3 dB Bandwidth > 200 MHz
Rail-to-Rail Operation
6-Lead SOT-23 Package and 8-Lead SOIC Package
Fast Switching Times:

= 12 ns

t

ON

= 6 ns

t

OFF

Typical Power Consumption (< 0.01 W)
TTL/CMOS Compatible

APPLICATIONS
Battery-Powered Systems
Communication Systems
Sample-and-Hold Systems
Audio Signal Routing
Video Switching
Mechanical Reed Relay Replacement

2:1 Mux/SPDT Switch in SOT-23

ADG719

FUNCTIONAL BLOCK DIAGRAM

ADG719

S2

S1

IN

SWITCHES SHOWN FOR A LOGIC “1” INPUT

D

GENERAL DESCRIPTION

The ADG719 is a monolithic CMOS SPDT switch. This switch
is designed on a submicron process that provides low power
dissipation yet gives high switching speed, low on resistance, and
low leakage currents.

The ADG719 can operate from a single-supply range of 1.8 V to

5.5 V, making it ideal for use in battery-powered instruments and
with the new generation of DACs and ADCs from Analog Devices.

Each switch of the ADG719 conducts equally well in both
directions when on. The ADG719 exhibits break-before-make
switching action.

Because of the advanced submicron process, –3 dB bandwidths
of greater than 200 MHz can be achieved.

The ADG719 is available in a 6-lead SOT-23 package and an
8-lead µSOIC package.

PRODUCT HIGHLIGHTS

1. 1.8 V to 5.5 V Single-Supply Operation. The ADG719 offers
high performance, including low on resistance and fast switching
times, and is fully specified and guaranteed with 3 V and 5 V
supply rails.

2. Very Low R
At 1.8 V operation, R
ture range.

3. Automotive Temperature Range: –40°C to +125°C

4. On Resistance Flatness (R

5. –3 dB Bandwidth > 200 MHz.

6. Low Power Dissipation. CMOS construction ensures low
power dissipation.

7. Fast t

8. Tiny 6-lead SOT-23 and 8-lead µSOIC packages.

ON/tOFF.

(4 Ω Max at 5 V and 10 Ω Max at 3 V).

ON

is typically 40 Ω over the tempera-

ON

FLAT(ON)

) (0.75 Ω typ).

REV. B

Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone] www.analog.com
Fax: [phone] © Analog Devices, Inc., 2002

ADG719–SPECIFICATIONS

Parameter +25C +85C +125C Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to VDDV
On Resistance (R

On Resistance Match Between

Channels (∆R

On Resistance Flatness (R

LEAKAGE CURRENTS V

Source Off Leakage I

Channel On Leakage I

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V
Input Current

or I

I

INL

INH

DYNAMIC CHARACTERISTICS

t

ON

t

OFF

Break-Before-Make Time Delay, t

Off Isolation –67 dB typ R

Channel-to-Channel Crosstalk –62 dB typ R

Bandwidth –3 dB 200 MHz typ R
C

(Off) 7 pF typ

S

CD, CS (On) 27 pF typ

POWER REQUIREMENTS V

I

DD

NOTES

1

Temperature range is as follows: B Version: – 40°C to +125°C.

2

Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

)V

ON

2.5 Ω typ Test Circuit 1
45 7 Ω max

) 0.1 Ω typ VS = 0 V to VDD, IS = –10 mA

ON

FLAT(ON)

(Off) ±0.01 nA typ VS = 4.5 V/1 V, VD = 1 V/4.5 V;

S

)0.75 Ω typ VS = 0 V to VDD, IS = –10 mA

±0.25 ± 0.35 1 nA max Test Circuit 2

, IS (On) ±0.01 nA typ VS = VD = 1 V or VS = VD = 4.5 V;

D

±0.25 ± 0.35 5 nA max Test Circuit 3

INH

INL

0.005 µA typ VIN = V

2

7 ns typ RL = 300 Ω, CL = 35 pF

3 ns typ RL = 300 Ω, CL = 35 pF

8 ns typ RL = 300 Ω, CL = 35 pF,

D

–87 dB typ R

–82 dB typ R

0.001 µA typ

(VDD = 5 V  10%, GND = 0 V.)

B Version
–40C to –40C to

0.4 0.4 Ω max

1.2 1.5 Ω max

2.4 V min

0.8 V max

±0.1 µA max

12 ns max V

6 ns max V

1 ns min V

1.0 µA max

= 0 V to VDD, IS = –10 mA;

S

= 5.5 V

DD

or V

INL

= 3 V; Test Circuit 4

S

= 3 V; Test Circuit 4

S

= VS2 = 3 V; Test Circuit 5

S1

= 50 Ω, CL = 5 pF, f = 10 MHz

L

= 50 Ω, CL = 5 pF, f = 1 MHz;

L

INH

Test Circuit 6

= 50 Ω, CL = 5 pF, f = 10 MHz

L

= 50 Ω, CL = 5 pF, f = 1 MHz;

L

Test Circuit 7

= 50 Ω, CL = 5 pF; Test Circuit 8

L

= 5.5 V

DD

Digital Inputs = 0 V or 5.5 V

1

–2–

REV. B

ADG719

1

SPECIFICATIONS

Parameter +25C +85C +125C Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to V
On Resistance (R

On Resistance Match Between
Channels (∆R

On Resistance Flatness (R

LEAKAGE CURRENTS V

Source Off Leakage I

Channel On Leakage I

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V
Input Current

or I

I

INL

DYNAMIC CHARACTERISTICS

t

ON

t

OFF

Break-Before-Make Time Delay, t

Off Isolation –67 dB typ R

Channel-to-Channel Crosstalk –62 dB typ R

Bandwidth –3 dB 200 MHz typ R

(Off) 7 pF typ

C

S

CD, CS (On) 27 pF typ

POWER REQUIREMENTS V

I

DD

NOTES

1

Temperature range is as follows: B Version: –40°C to +125°C.

2

Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

INH

ON

) 0.1 Ω typ VS = 0 V to VDD, IS = –10 mA

ON

(VDD = 3 V  10%, GND = 0 V.)

B Version
–40C to –40C to

V

DD

)67 Ω typ VS = 0 V to VDD, IS = –10 mA;

10 12 Ω max Test Circuit 1

0.4 0.4 Ω max

FLAT(ON)

(Off) ±0.01 nA typ VS = 3 V/1 V, VD = 1 V/3 V;

S

) 2.5 Ω typ VS = 0 V to VDD, IS = –10 mA

= 3.3 V

DD

±0.25 ±0.35 1 nA max Test Circuit 2

, IS (On) ±0.01 nA typ VS = VD = 1 V or VS = VD = 3 V;

D

±0.25 ±0.35 5 nA max Test Circuit 3

INH

INL

0.005 µA typ VIN = V

2.0 V min

0.8 V max

INL

or V

INH

±0.1 µA max

2

10 ns typ RL = 300 Ω, CL = 35 pF

15 ns max V

= 2 V; Test Circuit 4

S

4 ns typ RL = 300 Ω, CL = 35 pF

8 ns max V

8 ns typ RL = 300 Ω, CL = 35 pF

D

1 ns min V

–87 dB typ R

= 2 V; Test Circuit 4

S

= VS2 = 2 V; Test Circuit 5

S1

= 50 Ω, CL = 5 pF, f = 10 MHz

L

= 50 Ω, CL = 5 pF, f = 1 MHz;

L

Test Circuit 6

= 50 Ω, CL = 5 pF, f = 10 MHz

L

–82 dB typ R

= 50 Ω, CL = 5 pF, f = 1 MHz;

L

Test Circuit 7

= 50 Ω, CL = 5 pF; Test Circuit 8

L

= 3.3 V

DD

Digital Inputs = 0 V or 3.3 V

0.001 µA typ

1.0 µA max

REV. B

–3–

ADG719

ABSOLUTE MAXIMUM RATINGS

(TA = 25°C, unless otherwise noted.)

VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V

Analog, Digital Inputs

2

. . . . . . . . . . –0.3 V to VDD + 0.3 V or

1

. . . . . . . . . . . . . . . . . . . . . . . 30 mA, Whichever Occurs First

Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA

(Pulsed at 1 ms, 10% Duty Cycle Max)

Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . 30 mA

Operating Temperature Range

Industrial (B Version) . . . . . . . . . . . . . . . . –40°C to +125°C

Storage Temperature Range . . . . . . . . . . . . . –65°C to +150°C

Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . 150°C

µSOIC Package, Power Dissipation . . . . . . . . . . . . . . . 315 mW

Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 206°C/W

θ

JA

Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . 44°C/W

θ

JC

SOT-23 Package, Power Dissipation . . . . . . . . . . . . . . 282 mW

Thermal Impedance . . . . . . . . . . . . . . . . . . . . 229.6°C/W

θ

JA

Thermal Impedance . . . . . . . . . . . . . . . . . . . . 91.99°C/W

θ

JC

Lead Temperature, Soldering

Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . . . 215°C

Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 220°C

ESD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 kV

NOTES

1

Stresses above those listed under Absolute Maximum Ratings may cause perma­nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. Only one absolute
maximum rating may be applied at any one time.

2

Overvoltages at IN, S, or D will be clamped by internal diodes. Current should be
limited to the maximum ratings given.

Table I. Truth Table

ADG719 IN Switch S1 Switch S2

0ONOFF
1 OFF ON

PIN CONFIGURATIONS

TERMINOLOGY

V

DD

Most Positive Power Supply Potential
GND Ground (0 V) Reference
S Source Terminal. May be an input or output.
DDrain Terminal. May be an input or output.
IN Logic Control Input
R

ON

∆R

ON

R

FLAT(ON)

Ohmic Resistance between D and S

On Resistance Match between Any Two Channels

i.e., R

max – R

ON

ON

min

Flatness is defined as the difference between the

maximum and minimum value of on resistance,

as measured over the specified analog signal range.
I

(Off) Source Leakage Current with the Switch Off

S

I

, IS (On) Channel Leakage Current with the Switch On

D

V

)Analog Voltage on Terminals D and S

D (VS

C

(Off) Off Switch Source Capacitance

S

C

, CS (On) On Switch Capacitance

D

t

ON

Delay between Applying the Digital Control

Input and the Output Switching On
t

OFF

Delay between Applying the Digital Control

Input and the Output Switching Off
t

D

Off Time or On Time Measured between the

90% Points of Both Switches, when Switching

From One Address State to Another
Crosstalk A Measure of Unwanted Signal That Is Coupled

through from One Channel to Another as a Result

of Parasitic Capacitance
Off Isolation A Measure of Unwanted Signal Coupling through

an Off Switch
Bandwidth The Frequency at Which the Output is Attenuated

by –3 dBs
On Response The Frequency Response of the On Switch
Insertion Loss Loss due to On Resistance of Switch

6-Lead SOT-23

(RT-6)

1

IN

ADG719

2

V

TOP VIEW

DD

(Not to Scale)

3

GND

6

S2

5

D

4

S1

8-Lead SOIC

(RM-8)

1

D

2

ADG719

S1

TOP VIEW

3

GND

(Not to Scale)

4

DD

NC = NO CONNECT

8

S2

7

NC

6

IN

5

NCV

ORDERING GUIDE

Model Temperature Range Brand* Package Description Package Option

ADG719BRM –40°C to +125°C S5B µSOIC (MicroSmall Outline IC) [MSOP] RM-8
ADG719BRT –40°C to +125°C S5B SOT-23 (Plastic Surface Mount) RT-6

*Branding on these packages is limited to three characters due to space constraints.

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.

WARNING!

Although the ADG719 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.

–4–

ESD SENSITIVE DEVICE

REV. B

Typical Performance Characteristics–

FREQUENCY – Hz

1n

10

I

SUPPLY

– A

100 1k 10k 100k 1M 10M 100M

10n

100n

1

10

100

1m

10m

1

VDD = 5V

ADG719

6.0

5.5

5.0

4.5

4.0

3.5

– 

3.0

ON

R

2.5

2.0

1.5

1.0

0.5

0

VDD = 3.0V

0 5.00.5

1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

VD OR VS – DRAIN OR SOURCE VOLTAGE – V

VDD = 2.7V

VDD = 5.0V

TA = 25C

VDD = 4.5V

TPC 1. On Resistance vs. VD (VS), Single Supplies

6.0

5.5

5.0

4.5

4.0

3.5

– 

3.0

ON

R

2.5

2.0

1.5

1.0

0.5

0

0 3.00.5

+85C

+25C

–40C

1.0 1.5 2.0 2.5

VD OR VS – DRAIN OR SOURCE VOLTAGE – V

VDD = 3V

TPC 2. On Resistance vs. VD (VS) for Different
Temperatures, V

DD

= 3 V

0.15

0.10

0.05

CURRENT – nA

0

–0.05

09010

I

D

IS (OFF)

20 30 40 50 60 70 80

TEMPERATURE – C

, IS (ON)

V

DD

V

= 4.5V/1V

D

V

= 1V/4.5V

S

= 5V

TPC 4. Leakage Currents vs. Temperature

0.15

0.10

0.05

CURRENT – nA

0

–0.05

09010

I

, IS (ON)

D

IS (OFF)

20 30 40 50 60 70 80

TEMPERATURE – C

V

DD

V

D

V

S

= 3V
= 3V/1V
= 1V/3V

TPC 5. Leakage Currents vs. Temperature

6.0

5.5

5.0

4.5

4.0

– 

R

ON

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0

0 5.00.5

1.0 1.5 2.0 2.5 3.0

VD OR VS – DRAIN OR SOURCE VOLTAGE – V

+85C

+25C

–40C

TPC 3. On Resistance vs. VD (VS) for Different
Temperatures, VDD = 5 V

REV. B

VDD = 5V

3.5 4.0 4.5

TPC 6. Supply Current vs. Input Switching Frequency

–5–

ADG719

–30

–40

–50

–60

–70

–80

–90

OFF ISOLATION – dB

–100

–110

–120

–130

10k 100k 1M 10M 100M

FREQUENCY – Hz

VDD = 5V, 3V

TPC 7. Off Isolation vs. Frequency

–30

–40

–50

–60

–70

–80

–90

CROSSTALK – dB

–100

–110

–120

–130

10k 100k 1M 10M 100M

FREQUENCY – Hz

VDD = 5V, 3V

TPC 8. Crosstalk vs. Frequency

0

VDD = 5V

–2

–4

ON RESPONSE – dB

–6

100k 1M 100M

FREQUENCY – Hz

10M10k

TPC 9. On Response vs. Frequency

12

10

8

6

– pC

4

INJ

Q

2

0

–2

–4

05

VDD 3V

V

5V

DD

1234

V

– V

S

TPC 10. Charge Injection vs. Source Voltage

–6–

REV. B

Test Circuits

ADG719

I

DS

V1

SD

V

S

RON = V1/ I

DS

Test Circuit 1. On Resistance

V

S

V

S1

V

S2

V

IN

0.1F

S1

S2

IN

IN

IS (OFF) ID (OFF)

V

S

SD

A A

Test Circuit 2. Off Leakage

V

DD

0.1F

V

DD

SD

GND

R

L

300

C

L

35pF

V

OUT

V

IN

V

OUT

Test Circuit 4. Switching Times

V

DD

V

V

DD

GND

D2

D

R

L2

300

C

L2

35pF

V

OUT

IN

0V

V

OUT

0V

Test Circuit 5. Break-Before-Make Time Delay, t

V

D

50% 50%

90%

t

ON

50% 50%

50% 50%

t

D

D

SD

V

S

ID (ON)

Test Circuit 3. On Leakage

90%

t

OFF

t

D

A

V

D

V

DD

0.1F

V

DD

IN

V

IN

S

GND

50

D

OFF ISOLATION = 20 LOG

Test Circuit 6. Off Isolation

NETWORK

ANALYZER

50

V

OUT

R

L

50

V

OUT

V

V

IN

V

S

0.1F

IN

V

DD

0.1F

NETWORK

ANALYZER

R

V

L

OUT



50

S



50

V

S

V

DD

S1

S2

IN

GND

CHANNEL-TO-CHANNEL

CROSSTALK = 20

LOG

D

R



50

V

OUT

V

S

Test Circuit 7. Channel-to-Channel Crosstalk

V

DD

NETWORK

V

DD

S

D

GND

ANALYZER

50

V

V

OUT

R

L

50

S

REV. B

INSERTION LOSS = 20 LOG

V

Test Circuit 8. Bandwidth

–7–

WITH SWITCH

V

OUT

WITHOUT SWITCH

OUT

ADG719

APPLICATIONS INFORMATION

The ADG719 belongs to Analog Devices’ new family of
CMOS switches. This series of general-purpose switches has
improved switching times, lower on resistance, higher band­widths, low power consumption, and low leakage currents.

ADG719 Supply Voltages

Functionality of the ADG719 extends from 1.8 V to 5.5 V single
supply, which makes it ideal for battery-powered instruments
where power efficiency and performance are important design
parameters.

It is important to note that the supply voltage effects the input
signal range, the on resistance, and the switching times of the part.
By taking a look at the Typical Performance Characteristics and the
Specifications, the effects of the power supplies can be clearly seen.

For V

= 1.8 V operation, RON is typically 40 Ω over the

DD

temperature range.

On Response vs. Frequency

Figure 1 illustrates the parasitic components that affect the ac perfor­mance of CMOS switches (the switch is shown surrounded by a
box). Additional external capacitances will further degrade some
performance. These capacitances affect feedthrough, crosstalk,
and system bandwidth.

C

DS

S

R

V

IN

ON

D

C

D

C

LOAD

R

LOAD

V

OUT

Figure 1. Switch Represented by Equivalent Parasitic
Components

The transfer function that describes the equivalent diagram of
the switch (Figure 1) is of the form A(s) shown below:

As R

()

=



sR C

()

ON DS

T



sR R C

()

TONT





+

1



+

1



where:

RR R R

=+

T LOAD LOAD ON

=++

CC C C

T LOAD D DS

()

The signal transfer characteristic is dependent on the switch
channel capacitance, CDS. This capacitance creates a frequency
zero in the numerator of the transfer function A(s). Because the
switch on resistance is small, this zero usually occurs at high
frequencies. The bandwidth is a function of the switch output
capacitance combined with CDS and the load capacitance. The
frequency pole corresponding to these capacitances appears in
the denominator of A(s).

The dominant effect of the output capacitance, C

, causes the

D

pole breakpoint frequency to occur first. Therefore, in order to
maximize bandwidth, a switch must have a low input and
output capacitance and low on resistance. The On Response
vs. Frequency plot for the ADG719 can be seen in TPC 9.

Off Isolation

Off isolation is a measure of the input signal coupled through an
off switch to the switch output. The capacitance, C

, couples the

DS

input signal to the output load when the switch is off, as shown
in Figure 2.

C

DS

S

V

IN

D

C

D

C

LOAD

R

LOAD

V

OUT

Figure 2. Off Isolation Is Affected by External Load
Resistance and Capacitance

The larger the value of CDS, the larger the values of feedthrough
that will be produced. TPC 7 illustrates the drop in off isolation as
a function of frequency. From dc to roughly 200 kHz, the switch
shows better than –95 dB isolation. Up to frequencies of 10 MHz,
the off isolation remains better than –67 dB. As the frequency
increases, more and more of the input signal is coupled through to
the output. Off isolation can be maximized by choosing a switch
with the smallest C

possible. The values of load resistance and

DS

capacitance also affect off isolation, since they contribute to the
coefficients of the poles and zeros in the transfer function of the
switch when open.

As



()

=



sR C C C

()( )



sR C

()

LOAD DS

LOAD LOAD D DS

++ +




1



–8–

REV. B

OUTLINE DIMENSIONS

8-Lead Small Outline Package [MSOP]

(RM-8)

Dimensions shown in millimeters

3.00

BSC

ADG719

85

3.00
BSC

1

PIN 1

0.65 BSC

0.15

0.00

0.38

0.22

COMPLIANT TO JEDEC STANDARDS MO-187AA

4

SEATING
PLANE

4.90

BSC

1.10 MAX

0.23

0.08

8ⴗ
0ⴗ

6-Lead Plastic Surface Mount Package [SOT-23]

(RT-6)

Dimensions shown in millimeters

2.90 BSC

1.90

BSC

0.50

0.30

4 5

2.80 BSC

2

0.95 BSC

1.45 MAX

SEATING
PLANE

0.22

0.08
10ⴗ

0ⴗ

1.60 BSC

1.30

1.15

0.90

0.15 MAX

6

1 3

PIN 1

0.80

0.40

0.60

0.45

0.30

COMPLIANT TO JEDEC STANDARDS MO-178AB

–9–REV. B

ADG719

Revision History

Location Page

7/02 Data Sheet changed from REV. A to REV. B.

Changes to Product Name ...............................................................................................................................................................1

Changes to FEATURES..................................................................................................................................................................1

Additions to PRODUCT HIGHLIGHTS ....................................................................................................................................... 1

Changes to SPECIFICATIONS ......................................................................................................................................................2

Edits to ABSOLUTE MAXIMUM RATINGS ................................................................................................................................ 4

Changes to TERMINOLOGY.........................................................................................................................................................4

Edits to ORDERING GUIDE .........................................................................................................................................................4

Added new TPCs 4 and 5 ................................................................................................................................................................5

Replaced TPC 10 ............................................................................................................................................................................6

TEST CIRCUITs 6, 7, and 8 replaced ............................................................................................................................................7

Updated RM-8 and RT-6 package outlines ...................................................................................................................................... 9

–10–

REV. B

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C00044–0–7/02(B)

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PRINTED IN U.S.A.