Datasheet ADG709 Datasheet (ANALOG DEVICES)

CMOS, 1.8 V to 5.5 V/±2.5 V, 3 Ω

S1S

FEATURES

1.8 V to 5.5 V single supply ±2.5 V dual supply 3 Ω on resistance

0.75 Ω on resistance flatness 100 pA leakage currents 14 ns switching times Single 8-to-1 multiplexer ADG708 Differential 4-to-1 multiplexer ADG709 16-lead TSSOP package Low power consumption TTL-/CMOS-compatible inputs

APPLICATIONS

Data acquisition systems Communication systems Relay replacement Audio and video switching Battery-powered systems

GENERAL DESCRIPTION

Low Voltage 4-/8-Channel Multiplexers

ADG708/ADG709

FUNCTIONAL BLOCK DIAGRAMS

ADG708

8

1 OF 8

DECODER

A0DA1 A2

Figure 1.

ADG709

S1A

S4A

EN

DA

00041-001

The ADG708/ADG709 are low voltage, CMOS analog multiplexers comprising eight single channels and four differential channels, respectively. The ADG708 switches one of eight inputs (S1 to S8) to a common output, D, as determined by the 3-bit binary address lines A0, A1, and A2. The ADG709 switches one of four differential inputs to a common differential output as determined by the 2-bit binary address lines A0 and A1. An EN input on both devices is used to enable or disable the device. When disabled, all channels are switched off.

Low power consumption and an operating supply range of

1.8 V to 5.5 V make the ADG708/ADG709 ideal for batterypowered, portable instruments. All channels exhibit breakbefore-make switching action preventing momentary shorting when switching channels.

These switches are designed on an enhanced submicron process that provides low power dissipation yet gives high switching speed, very low on resistance, and leakage currents.

On resistance is in the region of a few ohms and is closely matched between switches and very flat over the full signal range. These parts can operate equally well as either multiplexers or demultiplexers and have an input signal range that extends to the supplies.

The ADG708/ADG709 are available in a 16-lead TSSOP.

S1B

EN

DB

00041-002

S4B

1 OF 4

DECODER

A0

A1

Figure 2.

PRODUCT HIGHLIGHTS

1. Single-/dual-supply operation. The ADG708/ADG709 are

fully specified and guaranteed with 3 V and 5 V single-supply and ±2.5 V dual-supply rails.

2. Low R

3. Low power consumption (<0.01 μW).

4. Guaranteed break-before-make switching action.

5. Small 16-lead TSSOP package.

(3 Ω typical).

ON

Rev. C

Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.

ADG708/ADG709

REVISION HISTORY

4/09−Rev. B to Rev. C

Changes to Table 1 ............................................................................ 3

Changes to Table 2 ............................................................................ 5

Changes to Table 3 ............................................................................ 7

Moved Truth Tables Section .......................................................... 11

Changes to Figure 7, Figure 8, and Figure 9................................ 12

Changes to Figure 13 and Figure 14 ............................................. 13

Moved Terminology Section ......................................................... 18

Changes to Ordering Guide .......................................................... 20

8/06−Rev. A to Rev. B

Updated Format .................................................................. Universal

Changes to Absolute Maximum Ratings Section ......................... 9

Added Table 7 and Table 8 ............................................................ 10

Updated Outline Dimensions ....................................................... 18

Changes to Ordering Guide .......................................................... 18

4/02—Rev. 0 to Rev. A

Edits to Features and Product Highlights ..................................... 1

Change to Specifications .............................................................. 2–4

Edits to Absolute Maximum Ratings Notes .................................. 5

Edits to TPCs 2, 5, 6–9, 11, and 15 ............................................. 7–9

Edits to Test Circuits 9 and 10 ...................................................... 11

Addition of Test Circuit 11 ............................................................ 11

10/00—Revision 0: Initial Version

Pin Configurations and Function Descriptions ......................... 10

Truth Tables................................................................................. 11

Typical Performance Characteristics ........................................... 12

Test Circuits ..................................................................................... 15

Terminology .................................................................................... 18

Applications Information .............................................................. 19

Power Supply Sequencing ......................................................... 19

Outline Dimensions ....................................................................... 20

Ordering Guide .......................................................................... 20

Rev. C | Page 2 of 20

ADG708/ADG709

SPECIFICATIONS

VDD = 5 V ± 10%, VSS = 0 V, GND = 0 V, unless otherwise noted.

Table 1.

B Version C Version

−40°C to

Parameter +25°C

+85°C

ANALOG SWITCH

Analog Signal Range

0 V to V

DD

On Resistance (RON) 3 3 Ω typ

4.5 5 7 4.5 5 7 Ω max On Resistance Match

Between Channels (ΔR

0.4 0.4 Ω typ

)

ON

0.8 1.5 0.8 1.5 Ω max VS = 0 V to VDD, IDS = 10 mA On Resistance Flatness

)

(R

FLAT (ON)

0.75 0.75 Ω typ V

1.2 1.65 1.2 1.65 Ω max

LEAKAGE CURRENTS VDD = 5.5 V

Source Off Leakage, IS (Off) ±0.01 ±0.01 nA typ

±20 ±20 ±0.1 ±0.3 ±1 nA max Drain Off Leakage, ID (Off) ±0.01 ±0.01 nA typ

±20 ±20 ±0.1 ±0.75 ±6 nA max Channel On Leakage, ID, IS (On) ±0.01 ±0.01 nA typ

±20 ±20 ±0.1 ±0.75 ±6 nA max

DIGITAL INPUTS

Input High Voltage, V Input Low Voltage, V

2.4 2.4 V min

INH

0.8 0.8 V max

INL

Input Current

I

or I

0.005 0.005 μA typ VIN = V

INL

INH

±0.1 ±0.1 μA max Digital Input Capacitance,

C

IN

2 2 pF typ

DYNAMIC CHARACTERISTICS1

t

14 14 ns typ

TRANSITION

25 25 25 25 ns max VS1 = 3 V/0 V, VS8 = 0 V/3 V Break-Before-Make Time

OPEN

Delay, t

8 8 ns typ R

1 1 1 1 ns min VS = 3 V; see Figure 25 tON (EN) 14 14 ns typ RL = 300 Ω, CL = 35 pF 25 25 25 25 ns max VS = 3 V; see Figure 26 t

(EN) 7 7 ns typ RL = 300 Ω, CL = 35 pF

OFF

12 12 12 12 ns max VS = 3 V; see Figure 26 Charge Injection ±3 ±3 pC typ

Off Isolation −60 −60 dB typ RL = 50 Ω, CL = 5 pF, f = 10 MHz

−80 −80 dB typ

−40°C to +125°C

0 V to VDD

−40°C to

+25°C

+85°C

−40°C to +125°C

0 V to VDD

Unit

V

Test Conditions/ Comments

= 0 V to VDD, IDS = 10 mA;

V

S

see Figure 20

= 0 V to VDD, IDS = 10 mA

S

= 4.5 V/1 V, VS = 1 V/4.5 V;

V

D

see Figure 21

= 4.5 V/1 V, VS = 1 V/4.5 V;

V

D

see Figure 22

= VS = 1 V or 4.5 V;

V

D

see Figure 23

or V

INH

INL

= 300 Ω, CL = 35 pF;

R

L

see Figure 24

= 300 Ω, CL = 35 pF

L

= 2.5 V, RS = 0 Ω,

V

S

C

= 1 nF; See Figure 27

L

= 50 Ω, CL = 5 pF,

R

L

f = 1 MHz; see Figure 28

Rev. C | Page 3 of 20

ADG708/ADG709

B Version C Version

−40°C to

Parameter +25°C

Channel-to-Channel

−60 −60 dB typ

+85°C

Crosstalk

−80 −80 dB typ

−3 dB Bandwidth 55 55 MHz typ

CS (Off) 13 13 pF typ f = 1 MHz CD (Off)

ADG708 85 85 pF typ f = 1 MHz ADG709 42 42 pF typ f = 1 MHz

CD, CS (On)

ADG708 96 96 pF typ f = 1 MHz ADG709 48 48 pF typ f = 1 MHz

POWER REQUIREMENTS VDD = 5.5 V

IDD 0.001 0.001 μA typ Digital inputs = 0 V or 5.5 V

1.0 1.0 1.0 1.0 μA max

1

Guaranteed by design, not subject to production test.

−40°C to +125°C

+25°C

−40°C to +85°C

−40°C to +125°C

Unit

Test Conditions/ Comments

RL = 50 Ω, CL = 5 pF, f = 10 MHz

= 50 Ω, CL = 5 pF, f = 1 MHz;

R

L

see Figure 29

= 50 Ω, CL = 5 pF;

R

L

see Figure 30

Rev. C | Page 4 of 20

ADG708/ADG709

VDD = 3 V ± 10%, VSS = 0 V, GND = 0 V, unless otherwise noted.

Table 2.

B Version C Version

−40°C to

Parameter +25°C

+85°C

ANALOG SWITCH

Analog Signal Range

On Resistance (RON) 8 8 Ω typ

11 12 14 11 12 14 Ω max On Resistance Match Between

Channels (ΔR

)

ON

0.4 0.4 Ω typ

1.2 2 1.2 2 Ω max

LEAKAGE CURRENTS VDD = 3.3 V

Source Off Leakage, IS (Off) ±0.01 ±0.01 nA typ

±20 ±20 ±0.1 ±0.3 ±1 nA max Drain Off Leakage, ID (Off) ±0.01 ±0.01 nA typ

±20 ±20 ±0.1 ±0.75 ±6 nA max Channel On Leakage, ID, IS (On) ±0.01 ±0.01 nA typ

±20 ±20 ±0.1 ±0.75 ±6 nA max

DIGITAL INPUTS

Input High Voltage, V Input Low Voltage, V

2.0 2.0 V min

INH

0.8 0.8 V max

INL

Input Current

I

or I

0.005 0.005 μA typ VIN = V

INL

INH

±0.1 ±0.1 μA max Digital Input Capacitance, CIN 2 2 pF typ

DYNAMIC CHARACTERISTICS1

t

18 18 ns typ

TRANSITION

30 30 30 30 ns max VS1 = 2 V/0 V, VS2 = 0 V/2 V Break-Before-Make Time

Delay, t

OPEN

8 8 ns typ RL = 300 Ω, CL = 35 pF

1 1 1 1 ns min VS = 2 V; see Figure 25 tON (EN) 18 18 ns typ RL = 300 Ω, CL = 35 pF 30 30 30 30 ns max VS = 2 V; see Figure 26 t

(EN) 8 8 ns typ RL = 300 Ω, CL = 35 pF

OFF

15 15 15 15 ns max VS = 2 V; see Figure 26 Charge Injection ±3 ±3 pC typ

Off Isolation −60 −60 dB typ

−80 −80 dB typ

Channel-to-Channel Crosstalk −60 −60 dB typ

−80 −80 dB typ

−3 dB Bandwidth 55 55 MHz typ

−40°C to +125°C

0 V to VDD

−40°C to

+25°C

+85°C

−40°C to +125°C

0 V to VDD

Unit

V

Test Conditions/ Comments

= 0 V to VDD, IDS = 10 mA;

V

S

see Figure 20

= 0 V to VDD,

V

S

= 10 mA

I

DS

= 3 V/1 V, VD = 1 V/3 V;

V

S

see Figure 21

= 3 V/1 V, VD = 1 V/3 V;

V

S

see Figure 22

= VD = 1 V or 3 V;

V

S

see Figure 23

or V

INH

INL

= 300 Ω, CL = 35 pF;

R

L

see Figure 24

= 1.5 V, RS = 0 Ω,

V

S

= 1 nF; see Figure 27

C

L

= 50 Ω, CL = 5 pF,

R

L

f = 10 MHz

= 50 Ω, CL = 5 pF,

R

L

f = 1 MHz; see Figure 28

= 50 Ω, CL = 5 pF,

R

L

f = 10 MHz

= 50 Ω, CL = 5 pF,

R

L

f = 1 MHz; see Figure 29

= 50 Ω, CL = 5 pF;

R

L

see Figure 30

Rev. C | Page 5 of 20

ADG708/ADG709

B Version C Version

−40°C to

Parameter +25°C

+85°C

CS (Off) 13 13 pF typ f = 1 MHz CD (Off)

ADG708 85 85 pF typ f = 1 MHz ADG709 42 42 pF typ f = 1 MHz

CD, CS (On)

ADG708 96 96 pF typ f = 1 MHz ADG709 48 48 pF typ f = 1 MHz

POWER REQUIREMENTS VDD = 3.3 V

IDD 0.001 0.001 μA typ Digital inputs = 0 V or 3.3 V

1.0 1.0 1.0 1.0 μA max

1

Guaranteed by design, not subject to production test.

−40°C to +125°C

+25°C

−40°C to +85°C

−40°C to +125°C

Unit

Test Conditions/ Comments

Rev. C | Page 6 of 20

ADG708/ADG709

DUAL SUPPLY

VDD = 2.5 V ± 10%, V

Table 3.

B Version C Version

Parameter +25°C

ANALOG SWITCH

Analog Signal Range VSS to VDD VSS to VDD V On Resistance (RON) 2.5 2.5 Ω typ

4.5 5 7 4.5 5 7 Ω max On Resistance Match Between

Channels (ΔR

0.8 1.5 0.8 1.5 Ω max VS = VSS to VDD, IDS = 10 mA On Resistance Flatness (R

1.0 1.65 1.0 1.65 Ω max

LEAKAGE CURRENTS VDD = +2.75 V, VSS = −2.75 V

Source Off Leakage, IS (Off) ±0.01 ±0.01 nA typ

±20 ±20 ±0.1 ±0.3 ±1 nA max Drain Off Leakage, ID (Off) ±0.01 ±0.01 nA typ

±20 ±20 ±0.1 ±0.75 ±6 nA max Channel On Leakage, ID, IS (On) ±0.01 ±0.01 nA typ

±20 ±20 ±0.1 ±0.75 ±6 nA max

DIGITAL INPUTS

Input High Voltage, V Input Low Voltage, V Input Current

I

or I

0.005 0.005 μA typ VIN = V

INL

INH

±0.1 ±0.1 μA max Digital Input Capacitance, CIN 2 2 pF typ

DYNAMIC CHARACTERISTICS1

t

14 14 ns typ

TRANSITION

25 25 25 25 ns max VS = 1.5 V/0 V; see Figure 24 Break-Before-Make Time Delay,

t

OPEN

1 1 1 1 ns min VS = 1.5 V; see Figure 25 tON (EN) 14 14 ns typ RL = 300 Ω, CL = 35 pF 25 25 25 25 ns max VS = 1.5 V; see Figure 26 t

(EN) 8 8 ns typ RL = 300 Ω, CL = 35 pF

OFF

15 15 15 15 ns max VS = 1.5 V; see Figure 26 Charge Injection ±3 ±3 pC typ

Off Isolation −60 −60 dB typ

−80 −80 dB typ

= –2.5 V ± 10%, GND = 0 V, unless otherwise noted.

SS

−40°C to +85°C

−40°C to +125°C +25°C

−40°C to +85°C

−40°C to +125°C Unit

0.4 0.4 Ω typ

)

ON

) 0.6 0.6 Ω typ VS = VSS to VDD, IDS = 10 mA

FLAT (ON)

1.7 1.7 V min

INH

0.7 0.7 V max

INL

8 8 ns typ R

Test Conditions/ Comments

= VSS to VDD, IDS = 10 mA;

V

S

see Figure 20

= +2.25 V/−1.25 V,

V

S

= −1.25 V/+2.25 V;

V

D

see Figure 21

= +2.25 V/−1.25 V,

V

S

V

= −1.25 V/+2.25 V;

D

see Figure 22

= VD = +2.25 V/−1.25 V;

V

S

see Figure 23

or V

INH

INL

= 300 Ω, CL = 35 pF;

R

L

see Figure 24

= 300 Ω, CL = 35 pF

L

= 0 V, RS = 0 Ω, CL = 1 nF;

V

S

see Figure 27

= 50 Ω, CL = 5 pF,

R

L

f = 10 MHz

= 50 Ω, CL = 5 pF,

R

L

f = 1 MHz; see Figure 28

Rev. C | Page 7 of 20

ADG708/ADG709

B Version C Version

−40°C to

Parameter +25°C

+85°C

Channel-to-Channel Crosstalk −60 −60 dB typ

−80 −80 dB typ

−3 dB Bandwidth 55 55 MHz typ

CS (Off) 13 13 pF typ f = 1 MHz CD (Off)

ADG708 85 85 pF typ f = 1 MHz ADG709 42 42 pF typ f = 1 MHz

CD, CS (On)

ADG708 96 96 pF typ f = 1 MHz ADG709 48 48 pF typ f = 1 MHz

POWER REQUIREMENTS VDD = 2.75 V

IDD 0.001 0.001 μA typ Digital inputs = 0 V or 2.75 V

1.0 1.0 1.0 1.0 μA max ISS 0.001 0.001 μA typ VSS = −2.75 V

1.0 1.0 1.0 1.0 μA max Digital inputs = 0 V or 2.75 V

1

Guaranteed by design not subject to production test.

−40°C to

+125°C

+25°C

−40°C to +85°C

−40°C to +125°C

Unit

Test Conditions/ Comments

= 50 Ω, CL = 5 pF,

R

L

f = 10 MHz

= 50 Ω, CL = 5 pF,

R

L

f = 1 MHz; see Figure 29

= 50 Ω, CL = 5 pF;

R

L

see Figure 30

Rev. C | Page 8 of 20

ADG708/ADG709

ABSOLUTE MAXIMUM RATINGS

TA = 25°C, unless otherwise noted.

Table 4.

Parameter Rating

VDD to VSS 7 V VDD to GND −0.3 V to +7 V VSS to GND +0.3 V to −3.5 V Analog Inputs1

Digital Inputs1

Peak Current, S or D (Pulsed at 1 ms,

10% Duty Cycle Maximum) Continuous Current, S or D 30 mA Operating Temperature

Industrial Temperature Range −40°C to +125°C

Storage Temperature Range −65°C to +150°C Junction Temperature 150°C TSSOP Package, Power Dissipation 432 mW

θJA Thermal Impedance 150.4°C/W

θJC Thermal Impedance 27.6°C/W Lead Temperature, Soldering

Vapor Phase (60 sec) 215°C

Infrared (15 sec) 220°C

1

Overvoltages at A, EN, S, or D are clamped by internal codes. Current should

be limited to the maximum ratings given.

− 0.3 V to VDD + 0.3 V

V

SS

or 30 mA, whichever occurs first

−0.3 V to V 30 mA, whichever occurs first

100 mA

+ 0.3 V or

DD

Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

Only one absolute maximum rating can be applied at any one time.

ESD CAUTION

Rev. C | Page 9 of 20

ADG708/ADG709

V

AS3AS4A

A

PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS

A0

EN

SS

S1

S2

S3

S4

D

1

2

3

ADG708

4

TOP VIEW

5

(Not to Scale)

6

7

8

16

A1

15

A2

14

GND

V

13

DD

12

S5

11

S6

10

S7

9

S8

Figure 3. ADG708 Pin Configuration

00041-003

A0

S1

S2

V

EN

SS

DA

1

2

3

ADG709

4

TOP VIEW

5

(Not to Scale)

6

7

8

16

A1

15

GND

14

V

DD

13

S1B

12

S2B

11

S3B

S4B

10

9

DB

Figure 4. ADG709 Pin Configuration

00041-004

Table 5. ADG708 Pin Function Descriptions

Pin No. Mnemonic Description

1 A0 Digital Input. Controls the configuration of the switch, as shown in the truth table (see Table 7). 2 EN Digital Input. Controls the configuration of the switch, as shown in the truth table (see Tab le 7). 3 VSS Most Negative Power Supply Pin in Dual-Supply Applications. For single-supply applications, it should be tied to GND. 4 S1 Source Terminal. Can be an input or output. 5 S2 Source Terminal. Can be an input or output. 6 S3 Source Terminal. Can be an input or output. 7 S4 Source Terminal. Can be an input or output. 8 D Drain Terminal. Can be an input or output. 9 S8 Source Terminal. Can be an input or output. 10 S7 Source Terminal. Can be an input or output. 11 S6 Source Terminal. Can be an input or output. 12 S5 Source Terminal. Can be an input or output. 13 VDD Most Positive Power Supply Pin. 14 GND Ground (0 V) Reference. 15 A2 Digital Input. Controls the configuration of the switch, as shown in the truth table (see Table 7). 16 A1 Digital Input. Controls the configuration of the switch, as shown in the truth table (see Table 7).

Table 6. ADG709 Pin Function Descriptions

Pin No. Mnemonic Description

1 A0 Digital Input. Controls the configuration of the switch, as shown in the truth table (see Tabl e 8). 2 EN Digital Input. Controls the configuration of the switch, as shown in the truth table (see Table 8). 3 VSS Most Negative Power Supply Pin in Dual-Supply Applications. For single-supply applications, it should be tied to GND. 4 S1A Source Terminal. Can be an input or output. 5 S2A Source Terminal. Can be an input or output. 6 S3A Source Terminal. Can be an input or output. 7 S4A Source Terminal. Can be an input or output. 8 DA Drain Terminal. Can be an input or output. 9 DB Drain Terminal. Can be an input or output. 10 S4B Source Terminal. Can be an input or output. 11 S3B Source Terminal. Can be an input or output. 12 S2B Source Terminal. Can be an input or output. 13 S1B Source Terminal. Can be an input or output. 14 VDD Most Positive Power Supply Pin. 15 GND Ground (0 V) Reference. 16 A1 Digital Input. Controls the configuration of the switch, as shown in the truth table (see Table 8).

Rev. C | Page 10 of 20

ADG708/ADG709

TRUTH TABLES

Table 7. ADG708 Truth Table

A2 A1 A0 EN Switch Condition

X1 X 0 0 0 1 1 0 0 1 1 2 0 1 0 1 3 0 1 1 1 4 1 0 0 1 5 1 0 1 1 6 1 1 0 1 7 1 1 1 1 8

1

X = Don’t care.

Table 8. ADG709 Truth Table

A1 A0 EN On Switch Pair

X1 X 0 0 1 1 0 1 1 2 1 0 1 3 1 1 1 4

1

X = Don’t care.

1

XX1 0 None

1

0 None

Rev. C | Page 11 of 20

ADG708/ADG709

TYPICAL PERFORMANCE CHARACTERISTICS

8

7

6

5

4

3

ON RESISTANCE (Ω)

2

1

0

012345

VD OR VS – DRAIN OR SOURCE VOLTAGE (V)

VDD = 2.7V

VDD = 3.3V

VDD = 4.5V

TA = 25°C V

= 0V

SS

VDD= 5.5V

Figure 5. On Resistance as a Function of VD (VS) for Single Supply

8

7

6

5

4

3

ON RESISTANCE (Ω)

2

1

0

–2.5 –2.0 –1.5 –1.0 –0.5 1. 0 1.5 2.0 2.5 3. 00.50

–3.0

VD OR VS – DRAIN OR SOURCE VO LTAGE (V)

VDD = +2.25V V

= –2.25V

SS

V

DD

V

SS

= +2.75V

= –2.75V

T

A

= 25°C

Figure 6. On Resistance as a Function of VD (VS) for Dual Supply

8

7

6

5

4

3

ON RESISTANCE (Ω)

2

1

0

0 0.5 1.0 1.5 2.0 3.02.5

OR VS – DRAIN OR SOURCE VOLTAG E (V)

V

00041-005

D

–40°C

+125°C

+25°C

V

DD

V

SS

+85°C

= 3V

= 0V

00041-008

Figure 8. On Resistance as a Function of VD (VS) for Different Temperatures,

Single Supply

6

5

4

3

2

ON RESISTANCE (Ω)

1

0

–2.5 –2. 0 –1.5 –1.0 0 0.5 1. 0 1.5 2.0–0.5 –2.5

00041-006

+125°C

+85°C

–40°C

V

OR VS – DRAIN OR SOURCE VO LTAGE (V)

D

VDD = +2.5V V

= –2.5V

SS

+25°C

0041-009

Figure 9. On Resistance as a Function of VD (VS) for Different Temperatures,

Dual Supply

8

7

6

5

4

3

ON RESISTANCE (Ω)

2

1

0

0123 4

VD OR VS – DRAIN OR SOURCE VOLTAGE (V)

+25°C

+85°C

–40°C

+125°C

V

= 5V

DD

V

= 0V

SS

5

0041-007

Figure 7. On Resistance as a Function of VD (VS) for Different Temperatures,

Single Supply

Rev. C | Page 12 of 20

0.12

0.08

0.04

0

CURRENT (nA)

–0.04

–0.08

–0.12

012345

VS, (VD = VDD – VS) (V)

ID (ON)

IS (OFF)

VDD = 5V V

SS

T

A

ID (OFF)

= 0V

= 25°C

Figure 10. Leakage Currents as a Function of VD (VS)

00041-010

ADG708/ADG709

0.12

0.08

VDD = 3V V

= 0V

SS

T

= 25°C

A

0.35

0.30

VDD = +3V

0.04

0

CURRENT (nA)

–0.04

–0.08

–0.12

00.5

1.0 1.5 2.0 3.0

VD, (VS = VDD – VD) (V)

Figure 11. Leakage Currents as a Function of V

0.12

0.08

0.04

0

CURRENT (nA)

–0.04

–0.08

(OFF)

I

S

I

D

IS (OFF)

(ON), VS = V

ID (OFF)

I

(ON)

D

(OFF)

I

D

2.5

(VS)

D

VDD = +2.5V V

= –2.5V

SS

= 25°C

T

A

D

0.25

0.20

0.15

CURRENT (nA)

0.10

0.05

0

20 40 60 80 100 120

0041-011

TEMPERATURE (°C)

ID (ON)

ID (OFF)

(OFF)

I

S

00041-014

Figure 14. Leakage Currents as a Function of Temperature

10m

TA = 25°C

1m

100µ

CURRENT (A)

100n

10µ

1µ

10n

VDD= +2.5V V

= –2.5V

SS

VDD = +5V

VDD = +3V

–0.12

–3.0

–2.5 –2.0 –1.5 –1. 0 0 0.5 1.0 1.5 2.0 2.5

–0.5 3.0

, (VD = VDD – VS) (V)

V

S

Figure 12. Leakage Currents as a Function of VD (VS)

0.35 VDD = +5V

= 0V

V

SS

0.30

AND

= +2.5V

V

DD

= –2.5V

V

SS

0.25

0.20

0.15

CURRENT (nA)

0.10

0.05

0

20 40 60 80 100 120

ID (OFF)

TEMPERATURE (°C)

I

ID (ON)

S

Figure 13. Leakage Currents as a Function of Temperature

(OFF)

1n

0041-012

10

FREQUENCY (Hz)

10M1M10k 100k1k100

0041-015

Figure 15. Supply Current vs. Input Switching Frequency

0

–20

–40

–60

–80

ATTENUATIO N (dB)

–100

–120

30k 100M10M100k 1M

00041-013

FREQUENCY (Hz)

V

DD

T

A

= 5V

= 25°C

00041-016

Figure 16. Off Isolation vs. Frequency

Rev. C | Page 13 of 20

ADG708/ADG709

ATTENUATIO N (dB)

–100

–20

–40

–60

–80

0

VDD = 5V T

= 25°C

A

20

10

0

= +3V

V

= +2.5V

= –2.5V

DD

V

= 0V

SS

(pC)

–10

INJ

Q

–20

–30

V

DD

V

SS

V V

DD SS

TA = 25°C

= +5V = 0V

–120

30k

FREQUENCY (Hz)

Figure 17. Crosstalk vs. Frequency

100M10M100k 1M

0041-017

–40

–3

–1 1 2 5

–2

VOLTAGE (V)

Figure 19. Charge Injection vs. Source Voltage

40

3

00041-019

0

VDD = 5V T

= 25°C

A

–5

–10

ATTENUATION (dB)

–15

–20

30k

FREQUENCY (Hz)

100M10M100k 1M

00041-018

Figure 18. On Response vs. Frequency

Rev. C | Page 14 of 20

ADG708/ADG709

VSSV

*

V

TEST CIRCUITS

I

DS

V1

S

V

S

RON = V1/I

Figure 20. On Resistance

V

DD

V

I

V

(OFF)

S

A

DD

S1

S2

S8

V

D

Figure 21. IS (OFF)

DD

V

DD

A2

IN

50Ω

A1

A0

ADG708*

2.4V

SIMILAR CO NNECTION F OR ADG709.

V

IN

50Ω

EN

DD

V

DD

A2

A1

S2 TO S7

A0

ADG708*

2.4V

*SIMILAR CONNECTIO N FOR ADG709.

EN

GND

V

DS

V

SS

V

SS

EN

V

SS

S2 TO S7

SS

S1

S8

D

0041-020

D

0.8V

00041-021

V

S1

V

S8

D

R

L

300Ω

C

L

35pF

V

OUT

Figure 24. Switching Time of Multiplexer, t

V

S

V

OUT

R 300Ω

C

L

35pF

Figure 25. Break-Before-Make Delay, t

ADDRESS DRIVE (V

ADDRESS

DRIVE (V

DD

GND

V

SS

I

(OFF)

D

A

V

EN

0.8V

D

00041-022

V

DD

S1

S2

S8

V

S

Figure 22. ID (OFF)

DD

V

S1

S8

V

S

V

GND

SS

I

(ON)

D

A

V

EN

2.4V

D

00041-023

DD

Figure 23. ID (ON)

3V

)

IN

50%

0V

V

S1

V

OUT

V

S8

t

TRANSITION

90%

TRANSITION

3

)

IN

0V

V

OUT

OPEN

80%

t

OPEN

50%

80%

t

TRANSITI ON

90%

0041-024

00041-025

Rev. C | Page 15 of 20

ADG708/ADG709

VDDV

V

2.4V

V

VDDV

ENABLE

DRIVE (V

OUTPUT

3

(V

IN

0V

V

OUT

)

3V

IN

0V

V

O

0V

(EN), t

ON

)

50%

0.9V

(EN)

OFF

Q

= CL× ΔV

INJ

50%

t

(EN)

OFF

0.9V

ΔV

OUT

O

0041-026

00041-027

O

t

(EN)

ON

OUT

SS

V

DDVSS

A2

A1

S2 TO S8

A0

ADG708*

EN

V

IN

50Ω

*SIMILAR CO NNECTION F OR ADG709.

R

S

V

S

V

IN

*SIMILAR CO NNECTION F OR ADG709.

GND

A2

A1

A0

S

EN

DD

V

DD

ADG708*

GND

V

S1

S

D

R

L

300Ω

C

L

35pF

V

OUT

Figure 26. Enable Delay, t

SS

V

LOGIC INPUT

OUT

V

SS

D

C

L

1nF

Figure 27. Charge Injection

0.1µF

A2

A1

A0

EN

OFF ISOLATION = 20 log

NETWORK ANALYZER

50Ω

V

S

DD

SS

V

DD

SS

S

D

GND

V

Figure 28. Off Isolation

50Ω

0.1µF

50Ω

OUT

S

SS

0.1µF 0.1µF

V

DD

A2

A1

A0

S1

SS

EN

ADG708*

D

S2

S8

GND

NETWORK

ANALYZER

50Ω

V

OUT

R

L

50Ω

2.4V

S

NETWO RK ANALYZER

R 50Ω

00041-028

V

OUT

L

*SIMILAR CONNECTION FOR ADG709.

CHANNEL-TO-CHANNEL CROSSTALK = 20 log

V

OUT

V

S

00041-029

Figure 29. Channel-to-Channel Crosstalk

Rev. C | Page 16 of 20

ADG708/ADG709

V

DD

V

DDVSS

S

GND

SS

NETWO RK

ANALYZER

50Ω

V

R 50Ω

S

V

OUT

L

0041-030

D

V

WITH SWITCH

OUT

V

WITHOUT SWITCH

OUT

0.1µF 0.1µF

A2

A1

A0

2.4V

INSERTION LOSS = 20 log

EN

Figure 30. Bandwidth

Rev. C | Page 17 of 20

ADG708/ADG709

TERMINOLOGY

VDD

Most positive power supply potential.

V

SS

Most negative power supply in a dual-supply application. In single-supply applications, tie V

to ground at the device.

SS

GND

Ground (0 V) reference.

S

Source terminal. Can be an input or output.

D

Drain terminal. Can be an input or output.

Ax

Logic control input.

EN

Active high enable.

R

ON

Ohmic resistance between D and S.

R

FLAT (ON)

Flatness is defined as the difference between the maximum and minimum value of on resistance as measured over the specified analog signal range.

I

(Off)

S

Source leakage current with the switch off.

I

(Off)

D

Drain leakage current with the switch off.

I

, IS (On)

D

Channel leakage current with the switch on.

V

(VS)

D

Analog voltage on Terminal D and Terminal S.

C

(Off)

S

Off switch source capacitance. Measured with reference to ground.

(Off)

C

D

Off switch drain capacitance. Measured with reference to ground.

C

, CS (On)

D

On switch capacitance. Measured with reference to ground.

C

IN

Digital input capacitance.

t

TRANSITION

Delay time measured between the 50% and 90% points of the digital inputs and the switch on condition when switching from one address state to another.

t

(EN)

ON

Delay time between the 50% and 90% points of the EN digital input and the switch on condition.

(EN)

t

OFF

Delay time between the 50% and 90% points of the EN digital input and the switch off condition.

t

OPEN

Off time measured between the 80% points of both switches when switching from one address state to another.

Off Isolation

A measure of unwanted signal coupling through an off switch.

Crosstalk

A measure of unwanted signal that is coupled through from one channel to another as a result of parasitic capacitance.

Charge

A measure of the glitch impulse transferred from injection of the digital input to the analog output during switching.

Bandwidth

The frequency at which the output is attenuated by 3 dB.

On Response

The frequency response of the on switch.

On Loss

The loss due to the on resistance of the switch.

V

INL

Maximum input voltage for Logic 0.

V

INH

Minimum input voltage for Logic 1.

I

(I

)

INL

INH

Input current of the digital input.

I

DD

Positive supply current.

I

SS

Negative supply current.

Rev. C | Page 18 of 20

ADG708/ADG709

APPLICATIONS INFORMATION

POWER SUPPLY SEQUENCING

When using CMOS devices, take care to ensure correct power supply sequencing. Incorrect power supply sequencing can result in the device being subjected to stresses beyond the maximum ratings listed in Figure 4.

Always apply digital and analog inputs after power supplies and ground. For single-supply operation, tie V the device as possible.

to GND as close to

SS

Rev. C | Page 19 of 20

ADG708/ADG709

OUTLINE DIMENSIONS

5.10

5.00

4.90

0.15

0.05

4.50

4.40

4.30

PIN 1

16

0.65 BSC

COPLANARITY

COMPLIANT TO JEDEC STANDARDS MO-153-AB

0.10

0.30

0.19

9

81

1.20 MAX

SEATING PLANE

6.40 BSC

0.20

0.09 8°

0°

0.75

0.60

0.45

Figure 31. 16-Lead Thin Shrink Small Outline Package [TSSOP]

(RU-16)

Dimensions shown in millimeters

ORDERING GUIDE

Model Temperature Range Package Description Package Option

ADG708BRU −40°C to +125°C 16-Lead Thin Shrink Small Outline Package [TSSOP] RU-16 ADG708BRU-REEL −40°C to +125°C 16-Lead Thin Shrink Small Outline Package [TSSOP] RU-16 ADG708BRU-REEL7 −40°C to +125°C 16-Lead Thin Shrink Small Outline Package [TSSOP] RU-16

ADG708BRUZ1 −40°C to +125°C 16-Lead Thin Shrink Small Outline Package [TSSOP] RU-16 ADG708BRUZ-REEL1 −40°C to +125°C 16-Lead Thin Shrink Small Outline Package [TSSOP] RU-16 ADG708BRUZ-REEL71 −40°C to +125°C 16-Lead Thin Shrink Small Outline Package [TSSOP] RU-16 ADG708CRU −40°C to +125°C 16-Lead Thin Shrink Small Outline Package [TSSOP] RU-16 ADG708CRU-REEL −40°C to +125°C 16-Lead Thin Shrink Small Outline Package [TSSOP] RU-16

ADG708CRU-REEL7 −40°C to +125°C 16-Lead Thin Shrink Small Outline Package [TSSOP] RU-16 ADG708CRUZ1 −40°C to +125°C 16-Lead Thin Shrink Small Outline Package [TSSOP] RU-16 ADG708CRUZ-REEL1 −40°C to +125°C 16-Lead Thin Shrink Small Outline Package [TSSOP] RU-16 ADG708CRUZ-REEL71 −40°C to +125°C 16-Lead Thin Shrink Small Outline Package [TSSOP] RU-16

ADG709BRU −40°C to +125°C 16-Lead Thin Shrink Small Outline Package [TSSOP] RU-16 ADG709BRU-REEL −40°C to +125°C 16-Lead Thin Shrink Small Outline Package [TSSOP] RU-16 ADG709BRU-REEL7 −40°C to +125°C 16-Lead Thin Shrink Small Outline Package [TSSOP] RU-16 ADG709BRUZ1 −40°C to +125°C 16-Lead Thin Shrink Small Outline Package [TSSOP] RU-16 ADG709BRUZ-REEL1 −40°C to +125°C 16-Lead Thin Shrink Small Outline Package [TSSOP] RU-16

ADG709BRUZ-REEL71 −40°C to +125°C 16-Lead Thin Shrink Small Outline Package [TSSOP] RU-16 ADG709CRU −40°C to +125°C 16-Lead Thin Shrink Small Outline Package [TSSOP] RU-16 ADG709CRU-REEL −40°C to +125°C 16-Lead Thin Shrink Small Outline Package [TSSOP] RU-16 ADG709CRU-REEL7 −40°C to +125°C 16-Lead Thin Shrink Small Outline Package [TSSOP] RU-16

ADG709CRUZ1 −40°C to +125°C 16-Lead Thin Shrink Small Outline Package [TSSOP] RU-16 ADG709CRUZ-REEL1 −40°C to +125°C 16-Lead Thin Shrink Small Outline Package [TSSOP] RU-16 ADG709CRUZ-REEL71 −40°C to +125°C 16-Lead Thin Shrink Small Outline Package [TSSOP] RU-16

1

Z = RoHS Compliant Part.

Rev. C | Page 20 of 20

Datasheet ADG709 Datasheet (ANALOG DEVICES)

Specifications and Main Features

Frequently Asked Questions

User Manual

FEATURES

APPLICATIONS

GENERAL DESCRIPTION

FUNCTIONAL BLOCK DIAGRAMS

PRODUCT HIGHLIGHTS

TABLE OF CONTENTS

REVISION HISTORY

SPECIFICATIONS

DUAL SUPPLY

ABSOLUTE MAXIMUM RATINGS

ESD CAUTION

PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS

TRUTH TABLES

TYPICAL PERFORMANCE CHARACTERISTICS

TEST CIRCUITS

TERMINOLOGY

APPLICATIONS INFORMATION

POWER SUPPLY SEQUENCING

OUTLINE DIMENSIONS

ORDERING GUIDE