Datasheet ADG659 Datasheet (ANALOG DEVICES)

+3 V/+5 V/±5 V CMOS 4- and 8-Channel

S

FEATURES

±2 V to ±6 V dual supply
2 V to 12 V single supply
Automotive temperature range −40°C to +125°C
<0.1 nA leakage currents
45 Ω on resistance over full signal range
Rail-to-rail switching operation
Single 8-to-1 multiplexer ADG658
Differential 4-to-1 multiplexer ADG659
16-lead LFCSP/TSSOP/QSOP packages
Typical power consumption <0.1 μW
TTL/CMOS compatible inputs
Package upgrades to 74HC4051/74HC4052 and

MAX4051/MAX4052/MAX4581/MAX4582

APPLICATIONS

Automotive applications
Automatic test equipment
Data acquisition systems
Battery-powered systems
Communication systems
Audio and video signal routing
Relay replacement
Sample-and-hold systems
Industrial control systems

Analog Multiplexers

ADG658/ADG659

FUNCTIONAL BLOCK DIAGRAM

ADG658

S1

8

1 OF 8

DECODER

EN

SWITCHES SHOWN FOR A LOGIC 1 INPUT

S1A

S4A

D

S1B

S4B

Figure 1.

ADG659

1 OF 4

DECODER

A0 A1 ENA0 A1 A2

DA

DB

03273-0-001

GENERAL DESCRIPTION

The ADG658 and ADG659 are low voltage, CMOS analog
multiplexers comprised of eight single channels and four
differential channels, respectively. The ADG658 switches one of
eight inputs (S1–S8) to a common output, D, as determined by
the 3-bit binary address lines A0, A1, and A2. The ADG659
switches one of four differential inputs to a common differential
output, as determined by the 2-bit binary address lines A0 and

EN

A1. An
the device. When disabled, all channels are switched off.

These parts are designed on an enhanced process that provides
lower power dissipation yet gives high switching speeds. These parts
can operate equally well as either multiplexers or demultiplexers
and have an input range that extends to the supplies. All
channels exhibit break-before-make switching action, preventing
momentary shorting when switching channels. All digital inputs
have 0.8 V to 2.4 V logic thresholds, ensuring TTL/CMOS logic
compatibility when using single +5 V or dual ±5 V supplies.

Rev. B

Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.

input on both devices is used to enable or disable

The ADG658 and ADG659 are available in 16-lead TSSOP/
QSOP packages and 16-lead 4 mm × 4 mm LFCSP packages.

PRODUCT HIGHLIGHTS

1. Single- and dual-supply operation. The ADG658 and

ADG659 offer high performance and are fully specified
and guaranteed with ±5 V, +5 V, and +3 V supply rails.

2. Automotive temperature range −40°C to +125°C.

3. Low power consumption, typically <0.1 μW.

4. 16-lead 4 mm × 4 mm LFCSP packages, 16-lead TSSOP

package and 16-lead QSOP package.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone] www.analog.com
Fax: [phone] ©2004–2009 Analog Devices, Inc. All rights reserved.

ADG658/ADG659

TABLE OF CONTENTS

Features .............................................................................................. 1

Applications ....................................................................................... 1 

Functional Block Diagram .............................................................. 1

General Description ......................................................................... 1

Product Highlights ........................................................................... 1

Revision History ............................................................................... 2

Specifications ..................................................................................... 3

Dual Supply ................................................................................... 3

5 V Single Supply .......................................................................... 5

2.7 V to 3.6 V Single Supply ........................................................ 7

REVISION HISTORY

2/09—Rev. A to Rev. B

Changes to Ordering Guide .......................................................... 20

7/04—Rev. 0 to Rev. A

Updated Format .................................................................. Universal

Added QSOP Package Outline ..................................................... 20

Changes to Ordering Guide .......................................................... 20

3/03—Rev. 0: Initial Version

Absolute Maximum Ratings ............................................................9

ESD Caution...................................................................................9

Pin Configurations and Function Descriptions ......................... 11

Typical Performance Characteristics ........................................... 13

Test Circuits ..................................................................................... 16

Outline Dimensions ....................................................................... 19

Ordering Guide ............................................................................... 20

Rev. B | Page 2 of 20

ADG658/ADG659

SPECIFICATIONS

DUAL SUPPLY

VDD = +5 V ± 10%, VSS = −5 V ± 10%, GND = 0 V, unless otherwise noted.

Table 1.

B Version Y Version

−40°C

Parameter +25°C

to +85°C

ANALOG SWITCH

Analog Signal Range VSS to VDD V VDD = +4.5 V, VSS = −4.5 V
On Resistance (RON) 45 Ω typ VS = ±4.5 V, IS = 1 mA; see Figure 21
75 90 100 Ω max
On Resistance Match between 1.3 Ω typ

Channels (∆RON) 3 3.2 3.5 Ω max VS = 3.5 V, IS = 1 mA

On Resistance Flatness (R

) 10 Ω typ VDD = +5 V, VSS = −5 V;

FLAT(ON)

16 17 18 Ω max VS = ±3 V, IS = 1 mA
LEAKAGE CURRENTS VDD = +5.5 V, VSS = −5.5 V

Source OFF Leakage IS (OFF) ±0.005 nA typ VD = ±4.5 V, VS = 4.5 V; see m Figure 22
±0.2 ±5 nA max

Drain OFF Leakage ID (OFF) ±0.005 nA typ VD = ±4.5 V, VS = 4.5 V; see mFigure 23

ADG658 ±0.2 ±5 nA max
ADG659 ±0.1 ±2.5 nA max

Channel ON Leakage ID, IS (ON) ±0.005 nA typ VD = VS = ±4.5 V; see Figure 24

ADG658 ±0.2 ±5 nA max
ADG659 ±0.1 ±2.5 nA max

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V

2.4 V min

INH

0.8 V max

INL

Input Current

I

or I

0.005 μA typ VIN = V

INL

INH

±1 μA max
CIN, Digital Input Capacitance 2 pF typ

DYNAMIC CHARACTERISTICS1

t

80 ns typ RL = 300 Ω, CL = 35 pF

TRANSITION

115 140 165 ns max VS = 3 V; see Figure 25
tON (EN)

80 ns typ R
115 140 165 ns max VS = 3 V; see Figure 27
t

(EN)

OFF

30 ns typ R
45 50 55 ns max VS = 3 V; see Figure 27
Break-Before-Make Time Delay, t

50 ns typ RL = 300 Ω, CL = 35 pF

BBM

10 ns min VS1 = VS2 = 3 V; see Figure 26
Charge Injection 2 pC typ VS = 0 V, RS = 0 Ω,
4 pC max CL = 1 nF; see Figure 28
Off Isolation −90 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 29
Total Harmonic Distortion, THD + N 0.025 % typ RL = 600 Ω, 2 V p-p, f = 20 Hz to 20 kHz

Channel-to-Channel Crosstalk

(ADG659)

−90 dB typ R

−3 dB Bandwidth

ADG658 210 MHz typ RL = 50 Ω, CL = 5 pF; see Figure 30
ADG659 400 MHz typ

−40°C
to+125°C Unit Test Conditions/Comments

or V

INH

INL

= 300 Ω, CL = 35 pF

L

= 300 Ω, CL = 35 pF

L

= 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 31

L

Rev. B | Page 3 of 20

ADG658/ADG659

B Version Y Version

−40°C

Parameter +25°C

to +85°C

CS (OFF) 4 pF typ f = 1 MHz
CD (OFF)

ADG658 23 pF typ f = 1 MHz
ADG659 12 pF typ f = 1 MHz

CD, CS (ON)

ADG658 28 pF typ f = 1 MHz
ADG659 16 pF typ f = 1 MHz

POWER REQUIREMENTS VDD = +5.5 V, VSS = −5.5 V

IDD 0.01 μA typ Digital Inputs = 0 V or 5.5 V

1 μA max

ISS 0.01 μA typ Digital Inputs = 0 V or 5.5 V

1 μA max

1

Guaranteed by design; not subject to production test.

−40°C
to+125°C

Unit Test Conditions/Comments

Rev. B | Page 4 of 20

ADG658/ADG659

5 V SINGLE SUPPLY

VDD = 5 V ± 10%, VSS = 0 V, GND = 0 V, unless otherwise noted.

Table 2.

B Version Y Version

−40°C

Parameter +25°C

to +85°C

ANALOG SWITCH

Analog Signal Range 0 to VDD V VDD = 4.5 V, VSS = 0 V
On Resistance (RON) 85 Ω typ VS = 0 V to 4.5 V, IS = 1 mA; see Figure 21
150 160 200 Ω max
On Resistance Match between 4.5 Ω typ VS = 3.5 V, IS = 1 mA

Channels (∆RON) 8 9 10 Ω max

On Resistance Flatness (R

) 13 14 16 Ω typ VDD = 5 V, VSS = 0 V, VS = 1.5 V to 4 V, IS = 1 mA

FLAT(ON)

LEAKAGE CURRENTS VDD = 5.5 V

Source OFF Leakage IS (OFF) ±0.005 nA typ VS = 1 V/4.5 V, VD = 4.5 V/1 V; see Figure 22
±0.2 ±5 nA max
Drain OFF Leakage ID (OFF) ±0.005 nA typ VS = 1 V/4.5 V, VD = 4.5 V/1 V; see Figure 23

ADG658 ±0.2 ±5 nA max
ADG659 ±0.1 ±2.5 nA max

Channel ON Leakage ID, IS (ON) ±0.005 nA typ VS = VD = 1 V or 4.5 V, see Figure 24

ADG658 ±0.2 ±5 nA max
ADG659 ±0.1 ±2.5 nA max

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V

2.4 V min

INH

0.8 V max

INL

Input Current

I

or I

0.005 μA typ VIN = V

INL

INH

±1 μA max
CIN, Digital Input Capacitance 2 pF typ

DYNAMIC CHARACTERISTICS1

t

120 ns typ RL = 300 Ω, CL = 35 pF

TRANSITION

200 270 300 ns max VS = 3 V; see Figure 25
tON (EN)

120 ns typ R
190 245 280 ns max VS = 3 V; see Figure 27
t

(EN)

OFF

35 ns typ R
50 60 70 ns max VS = 3 V; see Figure 27

Break-Before-Make Time Delay, t

100 ns typ RL = 300 Ω, CL = 35 pF

BBM

10 ns min VS1 = VS2 = 3 V; see Figure 26
Charge Injection 0.5 pC typ VS = 2.5 V, RS = 0 Ω, CL = 1 nF; see Figure 28
1 pC max
Off Isolation −90 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 29
Channel-to-Channel Crosstalk −90 dB typ RL = 50 Ω, CL = 5 pF; f = 1 MHz; see Figure 31

(ADG659)

−3 dB Bandwidth

ADG658 180 MHz typ RL = 50 Ω, CL = 5 pF; see Figure 30

ADG659 330 MHz typ
CS (OFF) 5 pF typ f = 1 MHz
CD (OFF)

ADG658 29 pF typ f = 1 MHz

ADG659 15 pF typ f = 1 MHz

−40°C
to +125°C Unit Test Conditions/Comments

or V

INH

INL

= 300 Ω, CL = 35 pF

L

= 300 Ω, CL = 35 pF

L

Rev. B | Page 5 of 20

ADG658/ADG659

B Version Y Version

−40°C

Parameter +25°C

to +85°C

CD, CS (ON)

ADG658 30 pF typ f = 1 MHz
ADG659 16 pF typ f = 1 MHz

POWER REQUIREMENTS VDD = 5.5 V

IDD 0.01 μA typ Digital Inputs = 0 V or 5.5 V

1 μA max

1

Guaranteed by design; not subject to production test.

−40°C
to +125°C

Unit Test Conditions/Comments

Rev. B | Page 6 of 20

ADG658/ADG659

2.7 V TO 3.6 V SINGLE SUPPLY

VDD = 2.7 to 3.6 V, VSS = 0 V, GND = 0 V, unless otherwise noted.

Table 3.

B Version Y Version

−40°C

Parameter +25°C

to +85°C

ANALOG SWITCH

Analog Signal Range 0 to VDD V VDD = 2.7 V, VSS = 0 V
On Resistance (RON) 185 Ω typ VS = 0 V to 2.7 V, IS = 0.1 mA; see Figure 21
300 350 400 Ω max
On Resistance Match between 2 Ω typ VS = 1.5 V, IS = 0.1 mA

Channels (∆RON) 4.5 6 7 Ω max

LEAKAGE CURRENTS VDD = 3.3 V

Source OFF Leakage IS (OFF) ±0.005 nA typ VS = 1 V/3 V, VD = 3 V/1 V; see Figure 22
±0.2 ±5 nA max
Drain OFF Leakage ID (OFF) ±0.005 nA typ VS = 1 V/3 V, VD = 3 V/1 V; see Figure 23

ADG658 ±0.2 ±5 nA max

ADG659 ±0.1 ±2.5 nA max
Channel ON Leakage ID, IS (ON) ±0.005 nA typ VS = VD = 1 V or 3 V, see Figure 24

ADG658 ±0.2 ±5 nA max

ADG659 ±0.1 ±2.5 nA max

DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V

2.0 V min

INH

0.5 V max

INL

Input Current

I

or I

0.005 μA typ VIN = V

INL

INH

±1 μA max
CIN, Digital Input Capacitance 2 pF typ
DYNAMIC CHARACTERISTICS1

t

200 ns typ RL = 300 Ω, CL = 35 pF

TRANSITION

370 440 490 ns max VS = 1.5 V; see Figure 25
tON (EN)

230 ns typ R
370 440 490 ns max VS = 1.5 V; see Figure 27
t

(EN)

OFF

50 ns typ R

80 90 110 ns max VS = 1.5 V; see Figure 27

Break-Before-Make Time Delay, t

200 ns typ RL = 300 Ω, CL = 35 pF

BBM

10 ns min VS1 = VS2 = 1.5 V; see Figure 26
Charge Injection 1 pC typ VS = 1.5 V, RS = 0 Ω, CL = 1 nF; see Figure 28
2 pC max
Off Isolation −90 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 29
Channel-to-Channel Crosstalk −90 dB typ RL = 50 Ω, CL = 5 pF; f = 1 MHz; see Figure 31

(ADG659)

−3 dB Bandwidth

ADG658 160 MHz typ RL = 50 Ω, CL = 5 pF; see Figure 30

ADG659 300 MHz typ
CS (OFF) 5 pF typ f = 1 MHz
CD (OFF)

ADG658 29 pF typ f = 1 MHz

ADG659 15 pF typ f = 1 MHz

−40°C
to +125°C Unit Test Conditions/Comments

or V

INH

INL

= 300 Ω, CL = 35 pF

L

= 300 Ω, CL = 35 pF

L

Rev. B | Page 7 of 20

ADG658/ADG659

B Version Y Version

−40°C

Parameter +25°C

to +85°C

CD, CS (ON)

ADG658 30 pF typ f = 1 MHz
ADG659 16 pF typ f = 1 MHz

POWER REQUIREMENTS VDD = 3.6 V

IDD 0.01 μA typ Digital Inputs = 0 V or 3.6 V

1 μA max

1

Guaranteed by design; not subject to production test.

−40°C
to +125°C

Unit Test Conditions/Comments

Rev. B | Page 8 of 20

ADG658/ADG659

ABSOLUTE MAXIMUM RATINGS

TA = 25°C, unless otherwise noted.

Table 4.

Parameter Rating

VDD to VSS 13 V
VDD to GND −0.3 V to +13 V
VSS to GND +0.3 V to −6.5 V
Analog Inputs1 V
Digital Inputs1

Peak Current, S or D 40 mA
(Pulsed at 1 ms, 10% duty cycle max)
Continuous Current, S or D 20 mA
Operating Temperature Range

Automotive (Y Version) −40°C to +125°C
Industrial (B Version) −40°C to +85°C

Storage Temperature Range −65°C to +150°C
Junction Temperature 150°C
θJA Thermal Impedance

16-Lead QSOP 104°C/W
16-Lead TSSOP 150.4°C/W
16-Lead LFCSP (4-Layer Board) 70°C/W

Lead Temperature, Soldering

Vapor Phase (60 sec) 215°C
Infrared (15 sec) 220°C

ESD 5.5 kV

1

Over voltages at AX, EN, S, or D are clamped by internal diodes. Current

should be limited to the maximum ratings.

− 0.3 V to VDD + 0.3 V

SS

GND − 0.3 V to V
or 10 mA, whichever
occurs first

+ 0.3 V

DD

Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.

ESD CAUTION

Rev. B | Page 9 of 20

ADG658/ADG659

Table 5. ADG658 Truth Table

A2 A1 A0 EN Switch Condition

X1 XX1 XX1 1 None
0 0 0 0 1
0 0 1 0 2
0 1 0 0 3
0 1 1 0 4
1 0 0 0 5
1 0 1 0 6
1 1 0 0 7
1 1 1 0 8

1

X = Don’t Care

Table 6. ADG659 Truth Table

A1 A0 EN On Switch Pair

X1 XX1 1 None
0 0 0 1
0 1 0 2
1 0 0 3
1 1 0 4

1

X = Don’t Care

Rev. B | Page 10 of 20

ADG658/ADG659

PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS

EN

V

GND

S5
S7

D
S8
S6

SS

1

2

3

ADG658

4

TOP VIEW

(Not to Scale)

5

6

7

8

16

V

DD

15

S3

14

S2

13

S1

12

S4

11

A0

10

A1

9

A2

S1B
S3B

DB
S4B
S2B

EN

V

GND

1

2

3
4

5

6

7

SS

8

ADG659

TOP VIEW

(Not to Scale)

16

V

DD

15

S3A

14

S2A

13

DA

12

S1A

11

S4A

10

A0

9

A1

03273-0-002

Figure 2. 16-Lead TSSOP/QSOP Pin Configuration

DD

V

S7

S5

S3

ADG658

TOP VIEW

5 6 7 8

SS

A2

A1

V

GND

EXPOSED PAD FLOATING

12

S2

11

S1

10

S4
A0

9

DB
S4B
S2B

EN

1
2
3
4

S8
S6

EN

D

1
2
3

(Not to Scale)

4

16 15 14 13

Figure 3. 16-Lead, 4 mm × 4 mm LFCSP Pin Configuration

DD

V

S3B

S1B

16 15 14 13

ADG659

TOP VIEW

(Not to Scale)

5 6 7 8

SS

A1

V

GND

S3A

A0

12

S2A

11

DA

10

S1A
S4A

9

03273-A-003

Table 7. Pin Function Descriptions

Parameter Description

VDD Most Positive Power Supply Potential.
VSS Most Negative Power Supply Potential.
IDD Positive Supply Current.
ISS Negative Supply Current.
GND Ground (0 V) Reference.
S Source Terminal. May be an input or output.
D Drain Terminal. May be an input or output.
AX Logic Control Input.
EN Active Low Digital Input. When high, device is disabled and all switches are OFF. When low, AX logic inputs determine ON

switch.
VD (VS) Analog Voltage on Terminals D, S.
RON Ohmic Resistance between D and S.
∆RON On Resistance Match between Any Two Channels, i.e., RONmax − RONmin.
R

FLAT(ON)

Flatness is defined as the difference between the maximum and minimum value of ON Resistance as measured over the

specified analog signal range.
IS (OFF) Source Leakage Current with the Switch OFF.
ID (OFF) Drain Leakage Current with the Switch OFF.
ID, IS (ON) Channel Leakage Current with the Switch ON.
V

Maximum Input Voltage for Logic 0.

INL

V

Minimum Input Voltage for Logic 1.

INH

I

) Input Current of the Digital Input.

INL (IINH

CS (OFF) OFF Switch Source Capacitance. Measured with reference to ground.
CD (OFF) OFF Switch Drain Capacitance. Measured with reference to ground.
CD, CS (ON) ON Switch Capacitance. Measured with reference to ground.
CIN Digital Input Capacitance.

Rev. B | Page 11 of 20

ADG658/ADG659

Parameter Description

tON Delay between Applying the Digital Control Input and the Output Switching ON. See Test Circuit 7.
t

Delay between Applying the Digital Control Input and the Output Switching OFF.

OFF

t

ON Time. Measured between 80% points of both switches when switching from one address state to another.

BBM

Charge
Injection

Off Isolation Measure of Unwanted Signal Coupling through an OFF Switch.
Crosstalk Measure of Unwanted Signal Coupled through from One Channel to Another as a Result of Parasitic Capacitance.
Bandwidth The Frequency at which the Output is Attenuated by 3 dB.
On Response The Frequency Response of the ON Switch.
Insertion Loss The Loss Due to the ON Resistance of the Switch.

Measure of the Glitch Impulse Transferred from the Digital Input to the Analog Output during Switching.

Rev. B | Page 12 of 20

ADG658/ADG659

TYPICAL PERFORMANCE CHARACTERISTICS

100

TA = 25°C

90

80

70

60

50

40

ON RESISTANCE (Ω)

30

20

10

0

–5.5 –3.5 –1.5 0.5 2.5 4.5

VDD,VSS = ±5.5V

VDD,VSS = ±3V

VDD,VSS = ±5V

VD, VS (V)

Figure 4. On Resistance vs. V

VDD,VSS = ±2.7V

VDD,VSS = ±4.5V

(VS) for Dual Supply

D

03273-0-006

140

120

100

80

60

ON RESISTANCE (Ω)

40

20

= 5V

V

DD

= 0V

V

SS

0

0 1.0 2.0

0.5 1.5 2.5 3.0 4.54.0 5.0
V

+125°C

, VS (V)

D

+85°C

–40°C

3.5

+25°C

03273-0-009

Figure 7. On Resistance vs. VD (VS) for Different Temperatures (Single Supply)

250

200

150

100

ON RESISTANCE (Ω)

50

0

024681012

VDD = 2.7V

VDD = 5.5V

VDD = 12V

VDD = 3V

VDD = 3.3V

VDD = 4.5V

VDD = 5V

VDD = 10V

VD, VS(V)

Figure 5. On Resistance vs. VD (VS) for Single Supply

100

90

80

70

60

50

40

ON RESISTANCE (Ω)

30

20

VDD = +5V

10

V

SS

0

–5 –2 0

Figure 6. On Resistance vs. V

+125°C

+85°C

+25°C

–40°C

= –5V

–4 –1 123 5

V

, VS(V)

D

(VS) for Different Temperatures (Dual Supply)

D

TA = 25°C

4–3

03273-0-007

03273-0-008

300

250

200

150

100

ON RESISTANCE (Ω)

50

VDD = 3V
V

= 0V

SS

0

0 0.5 1.0 1.5 2.0 2.5 3.0

Figure 8. On Resistance vs. V

1.5
VDD = 5V
V

= –5V

SS

1.0

V

= ±4V

D

V

= ±4V

S

0.5

0

–0.5

–1.0

CURRENT (nA)

–1.5

–2.0

–2.5

0 20 40 60 80 100 120

Figure 9. Leakage Current vs. Temperature (Dual Supply)

+85°C

+25°C

–40°C

V

, VS (V)

D

(VS) for Different Temperatures (Single Supply)

D

+125°C

IS (OFF)

ID (OFF)

IS,ID (ON)

TEMPERATURE (°C)

03273-0-011

03273-0-010

Rev. B | Page 13 of 20

ADG658/ADG659

1.5
VDD = +5V

V

= 0V

SS

1.0

V

= ±4V

D

±

V

=1V

S

0.5

0

–0.5

–1.0

CURRENT (nA)

–1.5

VDD = +3V
V

= 0V

SS

–2.0

V

= ±2.4V

D

±

V

=1V

S

–2.5

0 20 40 60 80 100 120

TEMPERATURE (°C)

IS,ID (ON)

IS (OFF)

ID (OFF)

Figure 10. Leakage Current vs. Temperature (Single Supply)

14

TA = 25°C

12

10

8

C)

P

(

6

INJ

Q

4

VDD = +5V

2

V

= –5V

SS

0

–2

–4

–5 –3 –1 1 3 5

–4 –2 0 2 4

(V)

V

S

VDD = +5V
V

SS

Figure 11. Charge Injection vs. Source Voltage

140

VDD = +5V

= –5V

V

SS

120

100

80

TIME (ns)

60

40

20

0

–40 –20 0 20 40 60 80 100 120

Figure 12. t

t

ON

TEMPERATURE (°C)

Times vs. Temperature (Dual Supply)

ON/tOFF

t

OFF

= 0V

03273-0-012

03273-0-013

03273-0-014

350

VSS = 0V

300

250

200

150

t

TIME (ns)

ON

100

50

0

–40 –20 0 100 120

Figure 13. tON/t

VDD = 3V

VDD = 5V

VDD = 3V

t

OFF

20 40 60 80

TEMPERATURE (°C)

Times vs. Temperature (Single Supply)

OFF

VDD = 5V

0
–1
–2
–3
–4
–5
–6
–7

dB

–8
–9

–10
–11
–12

VDD = +5V

–13
–14
–15

= –5V

V

SS

= 25°C

T

A

100k 1M 10M 100M

FREQUENCY (Hz)

Figure 14. ON Response vs. Frequency (ADG658)

0
–2
–4
–6
–8

–10
–12

dB

–14
–16
–18
–20

VDD = +5V
V

= –5V

SS

–22

T

= 25°C

A

–24

100k 1M 10M 100M

FREQUENCY (Hz)

Figure 15. ON Response vs. Frequency (ADG659)

03273-0-015

03273-0-016

03273-0-017

Rev. B | Page 14 of 20

ADG658/ADG659

–20

–40

0

VDD = +5V
V

= –5V

SS

T

= 25°C

A

10000

1000

100

VSS = 0V

VDD = 12V

–60

dB

–80

–100

–120

–10

–20

–30

–40
–50
–60

dB

–70

–80
–90

–100
–110
–120
–130

100

10

100k 1M 10M 100M

FREQUENCY (Hz)

Figure 16. OFF Isolation vs. Frequency

0

VDD = –5V
V

= +5V

SS

T

= 25°C

A

100k 1M 10M 100M

FREQUENCY (Hz)

Figure 17. Crosstalk vs. Frequency

600Ω
IN AND OUT

VDD = +5V
V

= –5V

SS

= 25°C

T

A

03273-0-018

03273-0-019

(μA)

10

DD

I

1

0.1

0.01
01012

2468

VDD = 5V

VDD = 3V

V(EN) (V)

03273-0-021

Figure 19. VDD Current vs. Logic Level

3.0

2.5

2.0

1.5

1.0

0.5

LOGIC THRESHOLD VOLTAGE (V)

0

0

(V)

V

DD

12246810

03273-0-022

Figure 20. Logic Threshold Voltage vs. Supply Voltage

1

THD + N (%)

0.1

0.01
20 50 100

200 500 1k 5k 10k 20k

FREQUENCY (Hz)

2k

Figure 18. THD + Noise

03273-0-020

Rev. B | Page 15 of 20

ADG658/ADG659

V

V

TEST CIRCUITS

I

DS

V

V

DD

V1

V

S

V

S

RON =V1/I

D

DS

03273-0-023

S1
S2
S8

V

S

Figure 21. ON Resistance

V

V

DD

SS

V

V

DD

GND

(OFF)

S

SS

D

EN

LOGIC 1

03273-0-024

V

S

(OFF)

I

S

S

S1

A

S2
S8

V

D

Figure 22. I

V

V

S1
S8

V

DDVSS

V

DDVSS

A2

IN

50Ω

A1
A0

S2–S7

ADG658*

EN

GND

*SIMILAR CONNECTION FOR ADG659

V

S1

S8

S1

V

S8

D

R
300Ω

C

L

L

35pF

ADDRESS
DRIVE (V

V

OUT

Figure 25. Switching Time of Multiplexer, t

3V

)

IN

0V

V

S1

V

OUT

V

S8

TRANSITION

50% 50%

t

TRANSITION

SS

V

DD

SS

EN

GND

Figure 23. ID (OFF)

V

DD

SS

V

DD

SS

EN

GND

Figure 24. ID (ON)

90%

I

D

D

LOGIC 1

I

D

t

TRANSITION

(OFF)

A

(ON)

D

A

90%

V

O

03273-0-025

V

D

03273-0-026

03273-0-027

Rev. B | Page 16 of 20

ADG658/ADG659

V

*

IN

50Ω

*SIMILAR CONNECTION FOR ADG659

V

DD

V

DD

A2
A1
A0

ADG658*

EN

GND

V

SS

V

SS

S2–S7

3V

ADDRESS
DRIVE (V

V

OUT

R

L

300Ω

V

S

C

L

35pF

S1

S8

D

Figure 26. Break-Before-Make Delay, t

)

IN

0V

BBM

80%

03273-0-028

V

OUT

80%

t

BBM

V

V

V

A2
A1
A0

V

IN

EN

50Ω

*SIMILAR CONNECTION FOR ADG659

DD

DD

ADG658*

GND

SS

V

SS

S2–S8

3V

ENABLE

V

S1

S

D

R
300Ω

C

L

L

35pF

DRIVE (V

V

OUT

Figure 27. Enable Delay, t

OUTPUT

)

IN

0V

V

O

0V

(EN), t

OFF

(EN)

ON

50% 50%

0.9V

O

t

(EN)

ON

0.9V

t

(EN)

OFF

O

03273-0-029

V

DDVSS

V

A2

DDVSS

A1

ADG658*

R

S

V

S

V

IN

SIMILAR CONNECTION FOR ADG659

A0

SD

EN

GND

C
1nF

LOGIC INPUT

V

OUT

L

3V

(V

)

IN

0V

V

OUT

Q

INJ

= CL×ΔV

OUT

ΔV

OUT

03273-0-030

Figure 28. Charge Injection

Rev. B | Page 17 of 20

ADG658/ADG659

V

LOGIC 1

0.1μ F

DD

V

DDVSS

A2
A1
A0

EN

V

SS

0.1μ F

S

D

GND

50Ω

Figure 29. Off Isolation

NETWORK

ANALYZER

50Ω

R

L

50Ω

OFF ISOLATION = 20 LOG

NETWORK
ANALYZER

50Ω

V

S

V

S

V

OUT

V

OUT

V

03273-0-031

S

VDDV

SS

50Ω

0.1μ F

A1
A0

S1A
S1B

DB
DA

VDDV

ADG659

0.1μ F

SS

EN

DA

DB

GND

V

DDVSS

0.1μF0.1μF

V

DDVSS

A2
A1

S

A0

D

EN

GND

INSERTION LOSS = 20 LOG

Figure 30. Bandwidth

NETWORK

ANALYZER

V

OUT

R

L

50Ω

50Ω

V

S

V

OUT

R

L

50Ω

WITH SWITCH

V

OUT

WITHOUT SWITCH

V

OUT

03273-0-032

V

CHANNEL-TO-CHANNEL CROSSTALK = 20 LOG

OUT

V

S

03273-0-033

Figure 31. Channel-to-Channel Crosstalk

Rev. B | Page 18 of 20

ADG658/ADG659

R

R

OUTLINE DIMENSIONS

5.10

5.00

4.90

0.15

0.05

4.50

4.40

4.30

PIN 1

16

0.65

BSC

COPLANARITY

COMPLIANT TO JEDEC STANDARDS MO-153AB

0.10

0.30

0.19

9

81

1.20
MAX

SEATING
PLANE

6.40
BSC

0.20

0.09
8°

0°

0.75

0.60

0.45

Figure 32. 16-Lead Thin Shrink Small Outline Package [TSSOP]

(RU-16)

Dimensions shown in millimeters

PIN 1

INDICATO

1.00

0.85

0.80

4.0

12° MAX

SEATING
PLANE

BSC SQ

TOP

VIEW

0.80 MAX

0.65 TYP

COMPLIANT TO JEDEC STANDARDS MO-220-VGGC

0.35

0.28

0.25

3.75

BSC SQ

0.20 REF

0.60 MAX

0.65 BSC

0.05 MAX

0.02 NOM

0.75

0.60

0.50

COPLANARITY

0.08

Figure 33. 16-Lead Lead Frame Chip Scale Package [LFCSP]

(CP-16-4)

Dimensions shown in millimeters

0.60 MAX

13

12

EXPOSED

PAD

(BOTTOM VIEW)

9

8

16

1

4

5

1.95 BSC

PIN 1
INDICATO

2.25

2.10 SQ

1.95

0.25 MIN

Rev. B | Page 19 of 20

ADG658/ADG659

0.065

0.049

0.010

0.004

COPLANARITY

0.004

0.193
BSC

0.012

0.008

9

8

0.154
BSC

0.069

0.053

SEATING
PLANE

0.236
BSC

0.010

0.006

16

1

PIN 1

0.025
BSC

COMPLIANT TO JEDEC STANDARDS MO-137AB

8°
0°

0.050

0.016

Figure 34. 16-Lead Shrink Small Outline Package [QSOP]

(RQ-16)

Dimensions shown in millimeters

ORDERING GUIDE

Model Temperature Range Package Description Package Option

ADG658YRU −40°C to +125°C 16-Lead Thin Shrink Small Outline Package [TSSOP] RU-16
ADG658YRU-REEL7 −40°C to +125°C 16-Lead Thin Shrink Small Outline Package [TSSOP] RU-16
ADG658YRUZ1 −40°C to +125°C 16-Lead Thin Shrink Small Outline Package [TSSOP] RU-16
ADG658YRUZ-REEL71 −40°C to +125°C 16-Lead Thin Shrink Small Outline Package [TSSOP] RU-16
ADG658YCP −40°C to +85°C 16-Lead Lead Frame Chip Scale Package [LFCSP] CP-16
ADG658YCP-REEL7 −40°C to +85°C 16-Lead Lead Frame Chip Scale Package [LFCSP] CP-16
ADG658YCPZ1 −40°C to +85°C 16-Lead Lead Frame Chip Scale Package [LFCSP] CP-16
ADG658YRQ −40°C to +125°C 16-Lead Shrink Small Outline Package [QSOP] RQ-16
ADG658YRQ-REEL −40°C to +125°C 16-Lead Shrink Small Outline Package [QSOP] RQ-16
ADG658YRQZ1 −40°C to +125°C 16-Lead Shrink Small Outline Package [QSOP] RQ-16
ADG658YRQZ-REEL71 −40°C to +125°C 16-Lead Shrink Small Outline Package [QSOP] RQ-16
ADG659YRU −40°C to +125°C 16-Lead Thin Shrink Small Outline Package [TSSOP] RU-16
ADG659YRU-REEL7 −40°C to +125°C 16-Lead Thin Shrink Small Outline Package [TSSOP] RU-16
ADG659YRUZ1 −40°C to +125°C 16-Lead Thin Shrink Small Outline Package [TSSOP] RU-16
ADG659YRUZ-REEL71 −40°C to +125°C 16-Lead Thin Shrink Small Outline Package [TSSOP] RU-16
ADG659WYRUZ-REEL7
ADG659YCP −40°C to +85°C 16-Lead Lead Frame Chip Scale Package [LFCSP] CP-16
ADG659YCPZ

1

ADG659YCPZ-REEL7
ADG659YRQ −40°C to +125°C 16-Lead Shrink Small Outline Package [QSOP] RQ-16
ADG659YRQ-REEL −40°C to +125°C 16-Lead Shrink Small Outline Package [QSOP] RQ-16
ADG659YRQ-REEL7 −40°C to +125°C 16-Lead Shrink Small Outline Package [QSOP] RQ-16
ADG659YRQZ1 −40°C to +125°C 16-Lead Shrink Small Outline Package [QSOP] RQ-16

1

Z = RoHS Compliant Part.

2

Qualified for automotive.

1, 2

−40°C to +125°C 16-Lead Thin Shrink Small Outline Package [TSSOP] RU-16

−40°C to +85°C 16-Lead Lead Frame Chip Scale Package [LFCSP] CP-16

1

−40°C to +85°C 16-Lead Lead Frame Chip Scale Package [LFCSP] CP-16

©2004–2009 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D03273-0-2/09(B)

Rev. B | Page 20 of 20