Datasheet ADG636 Datasheet (ANALOG DEVICES)

1 pC Charge Injection, 100 pA Leakage,

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FEATURES

1 pC charge injection
±2.7 V to ±5.5 V dual supply
+2.7 V to +5.5 V single supply
Automotive temperature range: −40°C to +125°C
100 pA (maximum at 25°C) leakage currents
85 Ω typical on resistance
Rail-to-rail operation
Fast switching times
Typical power consumption (<0.1 μW)
TTL-/CMOS-compatible inputs
14-lead TSSOP package

APPLICATIONS

Automatic test equipment
Data acquisition systems
Battery-powered instruments
Communication systems
Sample-and-hold systems
Remote-powered equipment
Audio and video signal routing
Relay replacement
Avio nics

CMOS, ±5 V/+5 V/+3 V Dual SPDT Switch

ADG636

FUNCTIONAL BLOCK DIAGRAM

ADG636

4

S1A

S1B

S2A

S2B

5

11

10

LOGIC

14

1

A0

A1

Figure 1.

EN

6

D1

9

D2

2

02754-001

GENERAL DESCRIPTION

The ADG636 is a monolithic device, comprising two indepen­dently selectable CMOS single pole, double throw (SPDT)
switches. When on, each switch conducts equally well in both
directions.

The ADG636 operates from a dual ±2.7 V to ±5.5 V supply, or
from a single supply of +2.7 V to +5.5 V.

This switch offers ultralow charge injection of ±1.5 pC over the
entire signal range and leakage current of 10 pA typical at 25°C.
In addition, it offers on resistance of 85 Ω typical, which is matched
to within 2 Ω between channels. The ADG636 also has low power
dissipation yet is capable of high switching speeds.

The ADG636 exhibits break-before-make switching action and
is available in a 14-lead TSSOP package.

PRODUCT HIGHLIGHTS

1. Ultralow charge injection. Q

full signal range.

2. Leakage current <0.25 nA maximum at 85°C.

3. Dual ±2.7 V to ±5 V or single +2.7 V to +5.5 V supply.

4. Automotive temperature range: −40°C to +125°C.

5. Small 14-lead TSSOP package.

: ±1.5 pC typical over the

INJ

Rev. A

Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone] www.analog.com
Fax: [phone] ©2002–2008 Analog Devices, Inc. All rights reserved.

ADG636

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TABLE OF CONTENTS

Features .............................................................................................. 1

Applications ....................................................................................... 1 

Functional Block Diagram .............................................................. 1

General Description ......................................................................... 1

Product Highlights ........................................................................... 1

Revision History ............................................................................... 2

Specifications ..................................................................................... 3

Dual Supply ................................................................................... 3

Single Supply ................................................................................. 5

REVISION HISTORY

8/08—Rev. 0 to Rev. A

Updated Format .................................................................. Universal

Changes to Analog Switch Parameter ............................................ 3

Changes to Analog Switch Parameter ............................................ 5

Changes to Analog Switch Parameter ............................................ 7

Change to I

Changes to Absolute Maximum Ratings ....................................... 9

Added Table 5; Renumbered Sequentially .................................. 10

Moved Truth Table ......................................................................... 10

Added Endnote to Table 6 ............................................................. 10

Changes to Figure 19 ...................................................................... 13

Updated Outline Dimensions ....................................................... 16

Changes to Ordering Guide .......................................................... 16

1/02—Revision 0: Initial Version

Parameter .................................................................. 8

DD

Absolute Maximum Ratings ............................................................9

ESD Caution...................................................................................9

Pin Configuration and Function Descriptions ........................... 10

Typical Performance Characteristics ........................................... 11

Test Circuits ..................................................................................... 13

Terminology .................................................................................... 15

Outline Dimensions ....................................................................... 16

Ordering Guide .......................................................................... 16

Rev. A | Page 2 of 16

ADG636

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SPECIFICATIONS

DUAL SUPPLY

VDD = 5 V ± 10%, VSS = −5 V ± 10%, GND = 0 V. All specifications −40°C to +125°C, unless otherwise noted.

Table 1.

Parameter +25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range VSS to VDD V
V
On Resistance, RON 85 Ω typ VS = ±3 V, IDS = −1 mA, Figure 14
115 140 160 Ω max VS = ±3 V, IDS = −1 mA, Figure 14
On-Resistance Match Between

Channels, ΔR

ON

2 Ω typ VS = ±3 V, IDS = −1 mA

4 5.5 6.5 Ω max VS = ±3 V, IDS = −1 mA
On-Resistance Flatness, R

25 Ω typ VS = ±3 V, IDS = −1 mA

FLAT(ON)

40 55 60 Ω max VS = ±3 V, IDS = −1 mA
LEAKAGE CURRENTS VDD = +5.5 V, VSS = −5.5 V

Source Off Leakage, IS (Off) ±0.01 nA typ VS = ±4.5 V, VD = 4.5 V, Figure 15
±0.1 ±0.25 ±2 nA max VS = ±4.5 V, VD = 4.5 V, Figure 15
Drain Off Leakage, ID (Off) ±0.01 nA typ VS = ±4.5 V, VD = 4.5 V, Figure 15
±0.1 ±0.25 ±2 nA max VS = ±4.5 V, VD = 4.5 V, Figure 15

Channel On Leakage, ID (On), IS (On) ±0.01 nA typ VS = VD = ±4.5 V, Figure 16
±0.1 ±0.25 ±6 nA max VS = VD = ±4.5 V, Figure 16
DIGITAL INPUTS

Input High Voltage, V

Input Low Voltage, V

Input Current, I

INL

2.4 V min

INH

0.8 V max

INL

or I

0.005 μA typ VIN = V

INH

±0.1 μA max VIN = V
Digital Input Capacitance, CIN 2 pF typ

DYNAMIC CHARACTERISTICS1

Transition Time 70 ns typ

100 120 150 ns max

tON Enable 100 ns typ

135 170 190 ns max

t

Enable 55 ns typ

OFF

80 90 100 ns max

Break-Before-Make Time Delay, t

20 ns typ

BBM

10 ns min

Charge Injection −1.2 pC typ

Off Isolation −65 dB typ

Channel-to-Channel Crosstalk −65 dB typ

Bandwidth −3 dB 610 MHz typ RL = 50 Ω, CL = 5 pF, Figure 22

= +4.5 V, VSS = −4.5 V

DD

or V

INL

INL

= +3 V, V

V

S1A

= 35 pF, Figure 17

C

L

= +3 V, V

V

S1A

C

= 35 pF, Figure 17

L

= 300 Ω, CL = 35 pF, VS = 3 V,

R

L

Figure 19

= 300 Ω, CL = 35 pF, VS = 3 V,

R

L

Figure 19

= 300 Ω, CL = 35 pF, VS = 3 V,

R

L

Figure 19

= 300 Ω, CL = 35 pF, VS = 3 V,

R

L

Figure 19

= 300 Ω, CL = 35 pF, VS = 3 V,

R

L

Figure 18

= 300 Ω, CL = 35 pF, VS = 3 V,

R

L

Figure 18

= 0 V, RS = 0 Ω, CL = 1 nF,

V

S

Figure 20

= 50 Ω, CL = 5 pF, f = 10 MHz,

R

L

Figure 21

= 50 Ω, CL = 5 pF, f = 10 MHz,

R

L

Figure 23

INH

or V

INH

= −3 V, RL = 300 Ω,

S1B

= −3 V, RL = 300 Ω,

S1B

Rev. A | Page 3 of 16

ADG636

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Parameter +25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments

CS (Off) 5 pF typ f = 1 MHz
CD (Off) 8 pF typ f = 1 MHz
CD (On), CS (On) 8 pF typ f = 1 MHz

POWER REQUIREMENTS VDD = +5.5 V, VSS = −5.5 V

IDD 0.001 μA typ Digital inputs = 0 V or 5.5 V

1.0 μA max Digital inputs = 0 V or 5.5 V
ISS 0.001 μA typ Digital inputs = 0 V or 5.5 V

1.0 μA max Digital inputs = 0 V or 5.5 V

1

Guaranteed by design; not subject to production test.

Rev. A | Page 4 of 16

ADG636

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SINGLE SUPPLY

VDD = 5 V ± 10%, VSS = 0 V, GND = 0 V. All specifications −40°C to +125°C, unless otherwise noted.

Table 2.

Parameter +25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to VDD V

V

On Resistance, RON 210 Ω typ VS = 3.5 V, IDS = −1 mA, Figure 14

290 350 380 Ω max VS = 3.5 V, IDS = −1 mA, Figure 14

On Resistance Match Between Channels, ΔRON 3 Ω typ VS = 3.5 V, IDS = −1 mA
12 13 Ω max VS = 3.5 V, IDS = −1 mA
LEAKAGE CURRENTS VDD = 5.5 V

Source Off Leakage, IS (Off) ±0.01 nA typ

±0.1 ±0.25 ±2 nA max

Drain Off Leakage, ID (Off) ±0.01 nA typ

±0.1 ±0.25 ±2 nA max

Channel On Leakage, ID (On), IS (On) ±0.01 nA typ VS = VD = 4.5 V/1 V, Figure 16
±0.1 ±0.25 ±6 nA max VS = VD = 4.5 V/1 V, Figure 16
DIGITAL INPUTS

Input High Voltage, V

Input Low Voltage, V

Input Current, I

INL

2.4 V min

INH

0.8 V max

INL

or I

0.005 μA typ VIN = V

INH

±0.1 μA max VIN = V
Digital Input Capacitance, CIN 2 pF typ

DYNAMIC CHARACTERISTICS1

Transition Time 90 ns typ

150 185 210 ns max

tON Enable 135 ns typ

180 235 275 ns max

t

Enable 70 ns typ

OFF

105 120 135 ns max

Break-Before-Make Time Delay, t

30 ns typ

BBM

10 ns min

Charge Injection 0.3 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF,

Figure 20

Off Isolation −60 dB typ

Channel-to-Channel Crosstalk −65 dB typ

Bandwidth −3 dB 530 MHz typ RL = 50 Ω, CL = 5 pF, Figure 22

CS (Off) 5 pF typ f = 1 MHz

CD (Off) 8 pF typ f = 1 MHz

CD (On), CS (On) 8 pF typ f = 1 MHz

= 4.5 V, VSS = 0 V

DD

= 1 V/4.5 V, VD = 4.5 V/1 V,

V

S

Figure 15
V

Figure 15
V

Figure 15
V

Figure 15

V
C

V
C

R
Figure 19

R
Figure 19

R
Figure 19

R
Figure 19

R
Figure 18

R
Figure 18

R
Figure 21

R
Figure 23

= 1 V/4.5 V, VD = 4.5 V/1 V,

S

= 1 V/4.5 V, VD = 4.5 V/1 V,

S

= 1 V/4.5 V, VD = 4.5 V/1 V,

S

or V

INL

INL

= 3 V, V

S1A

= 35 pF, Figure 17

L

= 3 V, V

S1A

= 35 pF, Figure 17

L

= 300 Ω, CL = 35 pF, VS = 3 V,

L

= 300 Ω, CL = 35 pF, VS = 3 V,

L

= 300 Ω, CL = 35 pF, VS = 3 V,

L

= 300 Ω, CL = 35 pF, VS = 3 V,

L

= 300 Ω, CL = 35 pF, VS = 3 V,

L

= 300 Ω, CL = 35 pF, VS = 3 V,

L

= 50 Ω, CL = 5 pF, f = 10 MHz,

L

= 50 Ω, CL = 5 pF, f = 10 MHz,

L

INH

or V

INH

= 0 V, RL = 300 Ω,

S1B

= 0 V, RL = 300 Ω,

S1B

Rev. A | Page 5 of 16

ADG636

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Parameter +25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments

POWER REQUIREMENTS VDD = 5.5 V

IDD 0.001 μA typ Digital inputs = 0 V or 5.5 V

1.0 μA max Digital inputs = 0 V or 5.5 V

1

Guaranteed by design; not subject to production test.

Rev. A | Page 6 of 16

ADG636

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VDD = 3 V ± 10%, VSS = 0 V, GND = 0 V. All specifications −40°C to +125°C, unless otherwise noted.

Table 3.

Parameter +25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 V to VDD V

V

On Resistance, RON 380 420 460 Ω typ VS = 1.5 V, IDS = −1 mA, Figure 14

On Resistance Match Between Channels, ΔRON 5 Ω typ VS = 1.5 V, IDS = −1 mA
LEAKAGE CURRENTS VDD = 3.3 V

Source Off Leakage, IS (Off) ±0.01 nA typ

±0.1 ±0.25 ±2 nA max

Drain Off Leakage, ID (Off) ±0.01 nA typ

±0.1 ±0.25 ±2 nA max

Channel On Leakage, ID (On), IS (On) ±0.01 nA typ VS = VD = 1 V/3 V, Figure 16
±0.1 ±0.25 ±6 nA max VS = VD = 1 V/3 V, Figure 16
DIGITAL INPUTS

Input High Voltage, V

Input Low Voltage, V

Input Current, I

INL

2.0 V min

INH

0.8 V max

INL

or I

0.005 μA typ VIN = V

INH

±0.1 μA max VIN = V
Digital Input Capacitance, CIN 2 pF typ

DYNAMIC CHARACTERISTICS1

Transition Time 170 ns typ

320 390 450 ns max

tON Enable 250 ns typ

360 460 530 ns max

t

Enable 110 ns typ

OFF

175 205 230 ns max

Break-Before-Make Time Delay, t

80 ns typ

BBM

10 ns min

Charge Injection 0.6 pC typ

Off Isolation −60 dB typ

Channel-to-Channel Crosstalk −65 dB typ

Bandwidth −3 dB 530 MHz typ RL = 50 Ω, CL = 5 pF, Figure 22

CS (Off) 5 pF typ f = 1 MHz

CD (Off) 8 pF typ f = 1 MHz

CD (On), CS (On) 8 pF typ f = 1 MHz

= 2.7 V, VSS = 0 V

DD

= 1 V/3 V, VD = 3 V/1 V,

V

S

Figure 15
V

Figure 15
V

Figure 15
V

Figure 15

V
C

V
C

R
Figure 19

R
Figure 19

R
Figure 19

R
Figure 19

R
Figure 18

R
Figure 18

V
Figure 20

R
Figure 21

R
Figure 23

= 1 V/3 V, VD = 3 V/1 V,

S

= 1 V/3 V, VD = 3 V/1 V,

S

= 1 V/3 V, VD = 3 V/1 V,

S

or V

INL

INL

= 2 V, V

S1A

= 35 pF, Figure 17

L

= 2 V, V

S1A

= 35 pF, Figure 17

L

= 300 Ω, CL = 35 pF, VS = 2 V,

L

= 300 Ω, CL = 35 pF, VS = 2 V,

L

= 300 Ω, CL = 35 pF, VS = 2 V,

L

= 300 Ω, CL = 35 pF, VS = 2 V,

L

= 300 Ω, CL = 35 pF, VS1 = 2 V,

L

= 300 Ω, CL = 35 pF, VS1 = 2 V,

L

= 0 V, RS = 0 Ω, CL = 1 nF,

S

= 50 Ω, CL = 5 pF, f = 10 MHz,

L

= 50 Ω, CL = 5 pF, f = 10 MHz,

L

INH

or V

INH

= 0 V, RL = 300 Ω,

S1B

= 0 V, RL = 300 Ω,

S1B

Rev. A | Page 7 of 16

ADG636

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Parameter +25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments

POWER REQUIREMENTS VDD = 3.3 V

IDD 0.001 μA typ Digital inputs = 0 V or 3.3 V

1.0 μA max Digital inputs = 0 V or 3.3 V

1

Guaranteed by design; not subject to production test.

Rev. A | Page 8 of 16

ADG636

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ABSOLUTE MAXIMUM RATINGS

TA = 25°C, unless otherwise noted.

Table 4.

Parameter Rating

VDD to VSS 13 V
VDD to GND −0.3 V to +6.5 V
VSS to GND +0.3 V to −6.5 V
Analog Inputs1 V
Digital Inputs1

Peak Current, S or D (Pulsed at 1 ms,

10% Duty Cycle Maximum)
Continuous Current, S or D 10 mA
Operating Temperature Range −40°C to +125°C
Storage Temperature Range −65°C to +150°C
Junction Temperature 150°C
TSSOP Package

θJA Thermal Impedance 150°C/W

θJC Thermal Impedance 27°C/W
Lead Soldering

Lead Temperature, Soldering (10 sec) 300°C

IR Reflow, Peak Temperature (<20 sec) 220°C
Pb-Free Soldering

Reflow, Peak Temperature 260(+0/−5)°C

Time at Peak Temperature 20 sec to 40 sec

1

Overvoltages at EN, A0, A1, S, or D are clamped by internal diodes. Current

should be limited to the maximum ratings given.

− 0.3 V to VDD + 0.3 V

SS

−0.3 V to V
30 mA, whichever
occurs first

20 mA

+ 0.3 V or

DD

Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.

ESD CAUTION

Rev. A | Page 9 of 16

ADG636

S

S

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PIN CONFIGURATION AND FUNCTION DESCRIPTIONS

1

A0

2

EN

3

V

S

S

4

1

A

(Not to Scale)

5

B

1

6

D1

7

NC

NC = NO CONNECT

ADG636

TOP VIEW

14

A1

13

GND

12

V

DD

11

S2A

10

S2B

9

D2

8

NC

02754-002

Figure 2. Pin Configuration

Table 5. Pin Function Descriptions

Pin number Mnemonic Description

1 A0 Digital Input (LSB).
2 EN Active High Digital Input.
3 VSS Negative Power Supply. For single-supply operation, connect this pin to GND.
4 S1A Source Terminal. Can be an input or output.
5 S1B Source Terminal. Can be an input or output.
6 D1 Drain Terminal. Can be an input or output.
7 NC Not Electrically Connected.
8 NC Not Electrically Connected.
9 D2 Drain Terminal. Can be an input or output.
10 S2B Source Terminal. Can be an input or output.
11 S2A Source Terminal. Can be an input or output.
12 VDD Positive Power Supply.
13 GND Ground (0 V) Power Supply.
14 A1 Digital Input (MSB).

Table 6. Truth Table

A1 A0 EN On Switch

1

X

X

1

0 None
0 0 1 S1A, S2A
0 1 1 S1B, S2A
1 0 1 S1A, S2B
1 1 1 S1A, S2B

1

X = logic state doesn’t matter; it can be either 0 or 1.

Rev. A | Page 10 of 16

ADG636

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TYPICAL PERFORMANCE CHARACTERISTICS

250

TA = 25°C

200

VDD,VSS = ±2.5V

150

VDD,VSS = ±3.3V

100

ON RESISTANCE (Ω)

50

VDD,VSS = ±4.5V

VDD,VSS = ±3V

VDD,VSS = ±5V

350

VDD = 5V

= 0V

V

SS

300

250

200

TA = +125°C

150

ON RESISTANCE (Ω)

100

50

TA = +85°C

TA = +25°C

TA = –40°C

0

–5 –4 –3

V

D,VS

(V)

Figure 3. On Resistance vs. VD (VS), Dual Supply

600

TA = 25°C
V

= 0V

SS

500

400

300

200

ON RESISTANCE (Ω)

100

VDD = 2.7V

VDD = 3V

VDD = 4.5V

VDD = 3.3V

0

0

0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4. 5 5.0

V

D

, VS (V)

Figure 4. On Resistance vs. VD (VS), Single Supply

VDD = 5V

5234–2 –1 0 1

02754-003

0

0 0.5 1.0 1.5 2.0 2. 5 3.0 3. 5 4.0 4.5 5.0

V

D,VS

(V)

02754-006

Figure 6. On Resistance vs. VD (VS) for Different Temperatures, Single Supply

5

3

1

–1

–3

–5

–7

CURRENT (nA)

–9

–11

VDD = +5V

–13

V

= –5V

SS

–15

06040 80 100

02754-004

TEMPERATURE (° C)

IS (OFF)

ID (OFF)

ID (ON), IS (ON)

12020

02754-007

Figure 7. Leakage Currents vs. Temperatures, Dual Supply

180

VDD = +5V
V

= –5V

SS

160

140

120

100

80

60

ON RESISTANCE (Ω)

40

20

0

–5 –4 54–3 –2 –1 3210

TA = +125°C

TA = +25°C

TA = +85°C

VD, VS (V)

TA = –40°C

02754-005

Figure 5. On Resistance vs. VD (VS) for Different Temperatures, Dual Supply

Rev. A | Page 11 of 16

5

3

1

–1

–3

–5

–7

CURRENT (nA)

–9

–11

–13

–15

VDD = 5V
V

= 0V

SS

06040 80 100 12020

TEMPERATURE ( °C)

IS (OFF)

ID (OFF)

ID (ON), IS (ON)

Figure 8. Leakage Currents vs. Temperature, Single Supply

02754-008

ADG636

A

A

A

A

www.BDTIC.com/ADI

1.0
TA = 25°C

0.5

0

–0.5

–1.0

CHARGE INJECTI ON (pC)

–1.5

–2.0

–5 –4 54–3 –2 –1 3210

Figure 9. Charge Injection vs. Source Voltage

VDD= +3V
V

= 0V

SS

= +5V

V

DD

V

= 0V

SS

= +5V

V

DD

V

= –5V

SS

(V)

V

S

02754-009

0

TA = 25°C

–10

–20

–30

–40

TION (dB)

–50

TTENU

–60

–70

–80

–90

1

FREQUENCY (MHz)

V

= +5V

DD

V

= 0V

SS

VDD= +5V
V

= –5V

SS

1000100100.3

02754-012

Figure 12. Crosstalk vs. Frequency

250

200

150

TIME (ns)

100

50

0

TA = 25 C

VDD= +5V
V

SS

t

ON

–

2

0

Figure 10. tON/t

V

= +5V

DD

V

= 0V

SS

= –5V

t

OFF

V

= +5V

DD

V

= 0V

SS

06040–40 80 100 12020

TEMPERATURE (° C)

Enable Timing vs. Temperature

OFF

VDD= +5V
V

= –5V

SS

02754-010

0

TA = 25 C

–2

–4

–6

–8

TION (dB)

–10

TTENU

–12

–14

–16

–18

FREQUENCY (MHz)

VDD= +5V
V

= –5V

SS

= +5V

V

DD

V

= 0V

SS

1000100100.3 1

02754-013

Figure 13. On Response vs. Frequency

0

TA = 25 C

–10

–20

= +5V

V

–30

–40

–50

–60

AT T E NUAT IO N ( d B)

–70

–80

–90

DD

V

= 0V

SS

FREQUENCY (MHz)

VDD= +5V
V

= –5V

SS

1000100100.3 1

02754-011

Figure 11. Off Isolation vs. Frequency

Rev. A | Page 12 of 16

ADG636

V

V

V

V

V

V

V

V

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TEST CIRCUITS

I

DS

V1

IS(OFF) ID(OFF)

SD

S

RON = V1/I

DS

02754-014

V

S

SD

A

A

V

D

02754-015

NC

SD

NC = NO CONNECT

Figure 14. On Resistance Figure 15. Off Leakage Figure 16. On Leakage

DD

0.1µF 0.1µF

A1

V

S

2.4V

50Ω

A0

EN

SS

V

OUT

3V

)

IN

0V

V

OUT

TRANSITION

50%

t

TRANSITION

90%

50%

t

TRANSITION

90%

02754-017

S1A

S1B

ADDRESS

DRIVE (V

C

L

35pF

V

V

SS

DD

S1A

S1B

D1

GND

R

L

300Ω

V

V

Figure 17. Transition Time, t

DD

0.1µF 0. 1µF

A0
A1

2.4V

50Ω

EN

S

SS

V

V

SS

DD

S1A

S1B

D1

GND

R

L

300Ω

V

S

Figure 18. Break-Before-Make Delay, t

C

L

35pF

ADDRESS

DRIVE (V

V

OUT

3V

)

IN

0V

V

OUT

80%

BBM

t

BBM

80%

2754-018

DD

0.1µF 0.1µF

A0
A1

EN

V

50Ω

S

SS

IN

OUTPUT

(EN), t

ON

3V

)

0V

V

OUT

0V

(EN)

OFF

50%

90%

t

(EN)

ON

50%

90%

t

(EN)

OFF

02754-019

C

L

35pF

ENABLE

DRIVE (V

V

OUT

V

V

SS

DD

S1A

S1B

D1

GND

R

L

300Ω

V

S

Figure 19. Enable Delay, t

ID(ON)

A

V

D

02754-016

Rev. A | Page 13 of 16

ADG636

V

V

V

V

V

V

VDDV

www.BDTIC.com/ADI

DD

SS

V

V

DD

SS

R

S

V

S

SD

DECODER

GND

A2A1

EN

C
1nF

V

OUT

L

V

OUT

V

IN

SW OFF SW OFF

SW OFF

V

IN

CHARGE INJECTI ON = ΔV

Q

INJ

OUT

= CL × ΔV

SW ON

SW ON

×C

L

OUT

ΔV

OUT

SW OFF

02754-020

Figure 20. Charge Injection

DD

0.1µF 0.1µF

V

OFF ISOLATION = 20 log

SS

NETWORK

V

DD

SS

S

D

GND

50Ω

V

OUT

V

S

ANALYZER

50Ω

V

V

OUT

R

L

50Ω

S

02754-021

Figure 21. Off Isolation

DD

0.1µF 0.1µF

SS

V

V

DD

SS

S

D

GND

INSERTION LOSS = 20 log

WITH SWITCH

V

OUT

V

WITHOUT SWITCH

OUT

NETWORK

ANALYZER

50Ω

V

V

OUT

R

L

50Ω

S

02754-022

Figure 22. Bandwidth

0.1µF 0. 1µF

NETWORK

ANALYZER

V

OUT

CHANNEL-TO-CHANNEL CROSSTAL K = 20 log

50Ω

V

R

L

50Ω

S

V

S1

S2

SS

V

DD

SS

D

R

L

50Ω

GND

V

OUT

V

S

02754-023

Figure 23. Channel-to-Channel Crosstalk

Rev. A | Page 14 of 16

ADG636

www.BDTIC.com/ADI

TERMINOLOGY

I

VDD

Most positive supply potential.

V

SS

Most negative power supply in a dual-supply application.
In single-supply applications, this should be tied to ground at
the device.

GND

Ground (0 V) reference.

I

DD

Positive supply current.

I

SS

Negative supply current.

S

Source terminal. May be an input or output.

D

Drain terminal. May be an input or output.

R

ON

Ohmic resistance between Terminal D and Terminal S.

ΔR

ON

On resistance match between any two channels (that is,
R

max − RON min).

ON

R

FLAT(ON)

Flatness is defined as the difference between the maximum and
minimum values of on resistance as measured over the specified
analog signal range.

I

(Off)

S

Source leakage current with the switch off.

I

(Off)

D

Drain leakage current with the switch off.

I

(On), IS (On)

D

Channel leakage current with the switch on.

V

, VS

D

Analog voltage on Terminal D and Terminal S.

V

INL

Maximum input voltage for Logic 0.

V

INH

Minimum input voltage for Logic 1.

INL(IINH)

Input current of the digital input.

C

(Off)

S

Channel input capacitance for the off condition.

C

(Off)

D

Channel output capacitance for the off condition.

C

(On), CS (On)

D

On switch capacitance.

C

IN

Digital input capacitance.

t

(EN)

ON

Delay time between the 50% and 90% points of the digital input
and the switch on condition.

t

(EN)

OFF

Delay time between the 50% and 90% points of the digital input
and the switch off condition.

t

TRANSITION

Delay time between the 50% and 90% points of the digital input
and the switch on condition when switching from one address
state to another.

t

BBM

Off time or on time measured between the 80% points of both
switches when switching from one address state to another.

Charge Injection

A measure of the glitch impulse transferred from the digital
input to the analog output during switching.

Crosstalk

A measure of unwanted signal that is coupled through from one
channel to another as a result of parasitic capacitance.

Off Isolation

A measure of unwanted signal coupling through an off switch.

Bandwidth

The frequency response of the on switch.

Insertion Loss

Loss due to the on resistance of the switch.

Rev. A | Page 15 of 16

ADG636

www.BDTIC.com/ADI

OUTLINE DIMENSIONS

5.10 (0.201)

5.00 (0.197)

4.90 (0.193)

4.50 (0.177)

4.40 (0.173)

4.30 (0.169)

PIN 1

1.05 (0.041)

1.00 (0.039)

0.80 (0.031)

0.15 (0.006)

0.05 (0.002)
COPLANARITY

0.10 (0.004)

14

1

0.65 (0.025)
BSC

0.30 (0.012)

0.19 (0.007)

CONTROLLING DIMENSIONSARE IN MILLIMETERS; INCH DIMENSIONS
(IN PARENTHESES) ARE ROUNDED-O FF MIL LIMETE R EQUIVALENTS FOR
REFERENCE ON LY AND ARE NOT APPROPRI ATE FOR USE IN DESIGN.

8

6.40 (0.252)
BSC

7

1.20 (0.047)
MAX

0.20 (0.008)

0.09 (0.003)

SEATING
PLANE

COMPLIANT TO JEDEC ST ANDARDS MO-153-AB-1

8°
0°

0.75 (0.029)

0.60 (0.023)

0.45 (0.018)

061908-A

Figure 24. 14-Lead Thin Shrink Small Outline Package [TSSOP]

(RU-14)

Dimensions shown in millimeters and (inches)

ORDERING GUIDE

Model Temperature Range Package Description Package Option

ADG636YRU −40°C to +125°C 14-Lead Thin Shrink Small Outline Package [TSSOP] RU-14
ADG636YRU-REEL −40°C to +125°C 14-Lead Thin Shrink Small Outline Package [TSSOP] RU-14
ADG636YRUZ1 −40°C to +125°C 14-Lead Thin Shrink Small Outline Package [TSSOP] RU-14
ADG636YRUZ-REEL1 −40°C to +125°C 14-Lead Thin Shrink Small Outline Package [TSSOP] RU-14
ADG636YRUZ-REEL 7

1

Z = RoHS Compliant Part.

1

−40°C to +125°C 14-Lead Thin Shrink Small Outline Package [TSSOP] RU-14

©2002–2008 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D02754-0-8/08(A)

Rev. A | Page 16 of 16