Low on resistance, 2.5 Ω maximum
<0.65 Ω on-resistance flatness
Dual ±2.7 V to ±5.5 V or single +2.7 V to +5.5 V supplies
Rail-to-rail input signal range
Tiny, 6-lead SOT-23; 8-lead MSOP; and 820 μm × 2255 μm die
Low power consumption
TTL-/CMOS-compatible inputs
APPLICATIONS
Automatic test equipment
Power routing
Communication systems
Data acquisition systems
Sample-and-hold systems
Avio nics
Relay replacement
Battery-powered systems
GENERAL DESCRIPTION
The ADG601/ADG602 are monolithic, CMOS single-pole
single-throw (SPST) switches with on resistance typically less
than 2.5 Ω. The low on-resistance flatness makes the
ADG601/ADG602 ideally suited to many applications,
particularly those requiring low distortion. These switches are
ideal replacements for mechanical relays because they are more
reliable, have lower power requirements, and are available in
much smaller package sizes.
The ADG601 is a normally open (NO) switch, and the ADG602
is a n
ormally closed (NC) switch. Each switch conducts equally
SPST Switches
ADG601/ADG602
FUNCTIONAL BLOCK DIAGRAMS
DS
IN
ADG601
NOTES
1. SWIT CHES SHOWN FOR A LOG IC 0 INPUT .
Figure 1.
Table 1. Truth Table
ADG601 IN ADG602 IN Switch Condition
0 1 Off
1 0 On
well in both directions when the device is on, with the input
signal range extending to the supply rails.
The switches are available in tiny, 6-lead SOT-23; 8-lead MSOP;
a
nd 820 μm × 2255 μm die.
ADG602
PRODUCT HIGHLIGHTS
1. Low on resistance (2 Ω typical)
2. Dual ±2.7 V t
iny, 6-lead SOT-23; 8-lead MSOP; and 820 μm × 2255 μm die
3. T
4. R
ail-to-rail input signal range
o ±5.5 V or single +2.7 V to +5.5 V supplies
DS
IN
02619-001
Rev. C
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
VDD = 5 V ± 10%, VSS = –5 V ± 10%, GND = 0 V, unless otherwise noted.
Table 2.
B Version
Parameter +25°C −40°C to +85°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range VSS to VDD V VDD = +4.5 V, VSS = –4.5 V
On Resistance (RON) 2 Ω typ VS = ±4.5 V, IDS = −10 mA; see Figure 15
2.5 5.5 Ω max
On-Resistance Flatness (R
0.6 0.65 Ω max
LEAKAGE CURRENTS VDD = +5.5 V, VSS = −5.5 V
Source Off Leakage, IS (Off) ±0.01 nA typ VS = +4.5 V/−4.5 V, VD = −4.5 V/+4.5 V; see Figure 16
±0.25 ±1 nA max
Drain Off Leakage, ID (Off) ±0.01 nA typ VS = +4.5 V/−4.5 V, VD = −4.5 V/+4.5 V; see Figure 16
±0.25 ±1 nA max
Channel On Leakage, ID, IS (On) ±0.01 nA typ VS = VD = +4.5 V or −4.5 V; see Figure 17
±0.25 ±1 nA max
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
Input Current, I
±0.1 μA max
Digital Input Capacitance, CIN 2 pF typ
DYNAMIC CHARACTERISTICS2
tON 80 ns typ RL = 300 Ω, CL = 35 pF
120 155 ns max VS = 3.3 V; see Figure 18
t
45 ns typ RL = 300 Ω, CL = 35 pF
OFF
75 90 ns max VS = 3.3 V; see Figure 18
Charge Injection 250 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF; see Figure 19
Off Isolation −60 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 20
Bandwidth −3 dB 180 MHz typ RL = 50 Ω, CL = 5 pF; see Figure 21
CS (Off) 50 pF typ f = 1 MHz
CD (Off) 50 pF typ f = 1 MHz
CD, CS (On) 145 pF typ f = 1 MHz
POWER REQUIREMENTS VDD = +5.5 V, VSS = −5.5 V
IDD 0.001 μA typ Digital inputs = 0 V or 5.5 V
1.0 μA max
ISS 0.001 μA typ Digital inputs = 0 V or 5.5 V
1.0 μA max
1
Temperature range for B version is −40°C to +85°C.
2
Guaranteed by design, not subject to production test.
Parameter +25°C −40°C to +85°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to VDD V VDD = 4.5 V
On Resistance (RON) 3.5 Ω typ VS = 0 V to 4.5 V, IDS = −10 mA; see Figure 15
5 8 Ω max
On-Resistance Flatness (R
) 0.2 0.2 Ω typ VS = 1.5 V to 3.3 V, IDS = –10 mA
FLAT (ON)
0.6 Ω max
LEAKAGE CURRENTS VDD = 5.5 V
Source Off Leakage, IS (Off) ±0.01 nA typ VS = 4.5 V/1 V, VD = 1 V/4.5 V; see Figure 16
±0.25 ±1 nA max
Drain Off Leakage, ID (Off) ±0.01 nA typ VS = 4.5 V/1 V, VD = 1 V/4.5 V; see Figure 16
±0.25 ±1 nA max
Channel On Leakage, ID, IS (On) ±0.01 nA typ VS = VD = 4.5 V or 1 V; see Figure 17
±0.25 ±1 nA max
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
Input Current, I
INL
2.4 V min
INH
0.8 V max
INL
or I
0.005 μA typ VIN = V
INH
INL
or V
INH
±0.1 μA max
Digital Input Capacitance, CIN 2 pF typ
DYNAMIC CHARACTERISTICS2
tON 110 ns typ RL = 300 Ω, CL = 35 pF
220 280 ns max VS = 3.3 V; see Figure 18
t
50 ns typ RL = 300 Ω, CL = 35 pF
OFF
80 110 ns max VS = 3.3 V; see Figure 18
Charge Injection 20 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF; see Figure 19
Off Isolation −60 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 20
Bandwidth –3 dB 180 MHz typ RL = 50 Ω, CL = 5 pF; see Figure 21
CS (Off) 50 pF typ f = 1 MHz
CD (Off) 50 pF typ f = 1 MHz
CD, CS (On) 145 pF typ f = 1 MHz
POWER REQUIREMENTS VDD = 5.5 V
IDD 0.001 μA typ Digital inputs = 0 V or 5.5 V
1.0 μA max
1
Temperature range for B version is −40°C to +85°C.
2
Guaranteed by design, not subject to production test.
Rev. C | Page 4 of 12
Page 5
ADG601/ADG602
www.BDTIC.com/ADI
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 4.
Parameter Rating
VDD to VSS 13 V
VDD to GND −0.3 V to +6.5 V
VSS to GND +0.3 V to –6.5 V
Analog Inputs
Digital Inputs
Continuous Current, S or D 100 mA
Peak Current, S or D
(Pulsed at 1 ms, 10% Duty Cycle Max) 200 mA
Operating Temperature Range
Industrial (B Version) −40°C to +85°C
Storage Temperature Range −65°C to +150°C
Junction Temperature 150°C
Thermal Resistance
MSOP
θJA 206°C/W
θJC 44°C/W
SOT-23
θJA 229.6°C/W
θJC 91.99°C/W
Lead Temperature, Soldering (10 sec) 300°C
IR Reflow, Peak Temperature 220°C
1
Overvoltages at IN, S, or D are clamped by internal diodes. Current should be
limited to the maximum ratings given.
1
1
VSS − 0.3 V to VDD + 0.3 V
−0.3 V to VDD + 0.3 V or
30 mA (whichever
occurs first)
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Only one absolute maximum rating may be applied at a time.
2 8 S Source Terminal. Can be an input or output.
3 5 V
4 7 GND
5 1 D
6 6 IN
Most Negative Power Supply Potential.
SS
Ground (0 V) Reference.
Drain Terminal. Can be an input or output.
Logic Control Input.
N/A 2, 3 NC No Connect.
Table 6. Die Pad Coordinates
1
Die Pad
Coordinates
Die Pad No.
X (μm) Y (μm)
Mnemonic Description
1 −265 +754 NC No Connect.
2 −265 +525 D Drain Terminal. Can be an input or output.2
3 −265 +241 D
4 −265 +141 D
5 −265 −191 NC
6 −265 −409 NC
7 −265 −549 NC
8 −265 −787 V
9 +265 −767 V
Most Positive Power Supply Potential.
DD
Most Negative Power Supply Potential.
SS
10 +265 −429 IN
11 +265 −289 GND
12 +265 +189 S
13 +265 +521 S Source Terminal. Can be an input or output.
Drain Terminal. Can be an input or output.2
Drain Terminal. Can be an input or output.2
No Connect.
No Connect.
No Connect.
Logic Control Input.
Ground (0 V) Reference.
Source Terminal. Can be an input or output.
3
3
14 +265 +661 NC Source Terminal. Can be an input or output.
1
Measured from the center of the die.
2
Bond the D pads together to a single point to preserve the on resistance and current handling capability. The common point acts as the drain pin of the switch.
3
Bond the S pads together to a single point to preserve the on resistance and current handling capability. The common point acts as the source pin of the switch.
Rev. C | Page 6 of 12
Page 7
ADG601/ADG602
www.BDTIC.com/ADI
TYPICAL PERFORMANCE CHARACTERISTICS
5
4
3
±4.5V
2
ON RESISTANCE ( Ω)
1
0
–5–4–3–2–1012345
Figure 5. On Resistance vs. V
±2.5V
VD,VS(V)
±3V
±5V
, VS (Dual Supply)
D
TA=25°C
±3.3V
02619-004
5
4
3
2
ON RESISTANCE (Ω)
1
VDD=5V
=0V
V
SS
0
00.51.0 1.5 2.02.5 3.0 3.5 4.04.5 5.0
Figure 8. On Resistance vs. V
+85°C
–40°C
VD,VS(V)
, VS for Different Temperatures (Single Supply)
D
+25°C
02619-007
10
9
8
7
6
5
4
ON RESISTANCE ( Ω)
3
2
TA=25°C
1
V
0
0 0.51.01.52.02.53.03.54.04.55.0
VDD=3.3V
=0V
SS
Figure 6. On Resistance vs. V
5
4
3
2
ON RESISTANCE (Ω)
1
0
–5–4–3–2–1012345
Figure 7. On Resistance vs. V
VDD=2.7V
VDD=3.0V
VDD=4.5V
VDD=5.0V
V
(V)
D,VS
, VS (Single Supply)
D
VDD=+5V
=–5V
V
SS
+25°C
–40°C
V
(V)
D,VS
, VS for Different Temperatures (Dual Supply)
D
+85°C
0.5
0.4
0.3
0.2
0.1
0
–0.1
–0.2
LEAKAGE CURRENT (n A)
–0.3
–0.4
–0.5
0 102030405060708085
02619-005
ID, IS (ON)
ID (OFF)
TEMPERATURE (° C)
VDD = +5V
V
= –5V
SS
V
= ±4.5V
D
V
=±4.5V
S
IS (OFF)
02619-009
Figure 9. Leakage Currents vs. Temperature (Dual Supply)
0.5
0.4
0.3
0.2
0.1
0
–0.1
–0.2
LEAKAGE CURRENT (n A)
–0.3
–0.4
–0.5
2619-006
0 102030405060708085
ID, IS (ON)
TEMPERATURE (° C)
ID (OFF)
VDD = 5V
V
= 0V
SS
V
= 4.5V/1V
D
V
= 1V/4.5V
S
IS (OFF)
02619-008
Figure 10. Leakage Currents vs. Temperature (Single Supply)
Rev. C | Page 7 of 12
Page 8
ADG601/ADG602
www.BDTIC.com/ADI
500
450
400
350
300
250
200
150
CHARGE INJECTI ON (pC)
100
50
0
–5–4–3–2–1012345
VDD=+5V
= –5V
V
SS
V
(V)
S
VDD=+5V
=0V
V
SS
TA=25°C
Figure 11. Charge Injection vs. Source Voltage
2619-010
0
–10
–20
–30
–40
–50
OFF ISOLATION (dB)
–60
equency
VDD=+5V
V
SS
T
A
–70
–80
0.2110100
FREQUENCY (MHz)
Figure 13. Off Isolation vs. Fr
=–5V
= 25°C
02619-012
180
160
140
120
t
100
80
TIME (ns)
60
40
20
0
–40–20020406080
ON
t
OFF
Figure 12. t
VDD=+5V
=0V
V
SS
VDD=+5V
=0V
V
SS
TEMPERATURE (°C)
Times vs. Temperature
ON/tOFF
VDD=+5V
V
VDD=+5V
V
SS
SS
=–5V
= –5V
02619-011
0
–2
–4
–6
–8
ON RESPONSE (dB)
VDD=+5V
–10
V
= –5V
SS
T
= 25°C
A
–12
0.2110100400
FREQUENCY (MHz)
Figure 14. On Response vs. Frequency
2619-013
Rev. C | Page 8 of 12
Page 9
ADG601/ADG602
www.BDTIC.com/ADI
TERMINOLOGY
VDD
Most positive power supply potential.
V
INL
Maximum input voltage for Logic 0.
V
SS
Most negative power supply potential.
I
DD
Positive supply current.
I
SS
Negative supply current.
GND
Ground (0 V) reference.
S
Source terminal. Can be an input or an output.
D
Drain terminal. Can be an input or an output.
IN
Logic control input.
V
, VS
D
Analog voltage on Terminal D and Terminal S.
R
ON
Ohmic resistance between Terminal D and Terminal S.
R
FLAT (ON)
Flatness is defined as the difference between the maximum and
um values of on resistance as measured over the specified
minim
analog signal range.
I
(Off)
S
Source leakage current with the switch off.
I
(Off)
D
Drain leakage current with the switch off.
I
, IS (On)
D
Channel leakage current with the switch on.
V
INH
Minimum input voltage for Logic 1.
(I
INL
INH
)
I
Input current of the digital input.
C
(Off)
S
Off switch source capacitance. Measured with reference to ground.
C
(Off)
D
Off switch drain capacitance. Measured with reference to ground.
C
, CS (On)
D
On switch capacitance. Measured with reference to ground.
C
IN
Digital input capacitance.
t
ON
Delay between applying the digital control input and the output
tching on.
swi
t
OFF
Delay between applying the digital control input and the output
tching off.
swi
Charge Injection
A measure of the glitch impulse transferred from the digital
in
put to the analog output during switching.
Off Isolation
A measure of unwanted signal coupling through an off switch.
On Response
Frequency response of the on switch.
Insertion Loss
Loss due to the on resistance of the switch.
Rev. C | Page 9 of 12
Page 10
ADG601/ADG602
V
V
V
V
V
VDDV
VDDV
www.BDTIC.com/ADI
TEST CIRCUITS
I
DS
V1
ID(ON)
A
V
D
02619-016
SD
V
S
RON=V1/I
Figure 15. On Resistance
IS(OFF)ID(OFF)
SD
A
DS
2619-014
S
A
V
D
2619-015
NC
Figure 16. Off Leakage
SD
NC = NO CO NNECT
Figure 17. On Leakage
V
SS
DD
0.1µF
V
DD
SD
S
IN
GND
0.1µF
V
SS
V
OUT
R
300Ω
C
L
L
35pF
ADG601
V
IN
V
IN
ADG602
V
OUT
50%50%
50%50%
90%90%
t
ON
t
OFF
02619-017
Figure 18. Switching Times
DD
SS
V
V
DD
SS
R
S
V
S
SD
IN
GND
C
1nF
V
OUT
L
V
V
V
OUT
ADG601
IN
ADG602
IN
Q
INJ=CL
× ΔV
OUT
ΔV
OFFON
OUT
02619-018
Figure 19. Charge Injection
0.1µF
V
DD
IN
V
IN
S
GND
OFF ISOLATION = 20 log
SS
0.1µF
V
SS
50Ω
D
V
OUT
V
S
Figure 20. Off Isolation
NETWORK
ANALYZER
50Ω
V
S
V
OUT
R
L
50Ω
0.1µF
V
IN
V
IN
02619-019
INSERTION LOSS = 20 log
SS
0.1µF
NETWORK
V
DD
SS
S
D
GND
V
OUT
WITHOUT SWITCH
V
S
ANALYZER
50Ω
R
L
50Ω
WITH SWITCH
V
S
V
OUT
02619-020
Figure 21. Bandwidth
Rev. C | Page 10 of 12
Page 11
ADG601/ADG602
www.BDTIC.com/ADI
OUTLINE DIMENSIONS
3.20
3.00
2.80
PIN 1
0.95
0.85
0.75
0.15
0.00
COPLANARITY
8
1
0.65 BSC
0.38
0.22
0.10
3.20
3.00
2.80
5
4
SEATING
PLANE
5.15
4.90
4.65
1.10 MAX
0.23
0.08
1.60 BSC
PIN 1
INDICATOR
1.30
1.15
0.90
8°
0°
0.80
0.60
0.40
0.15 MAX
2.90 BSC
6
13
2
1.90
BSC
0.50
0.30
45
0.95 BSC
2.80 BSC
1.45 MAX
SEATING
PLANE
0.22
0.08
10°
0.60
4°
0.45
0°
0.30
COMPLIANT TO JEDEC STANDARDS MO-187-AA
Figure 22. 8-Lead Mini Small Outline Package [MSOP]
(RM-8)
Dim
ensions shown in millimeters
COMPLIANT TO JEDEC STANDARDS MO-178-AB
Figure 23. 6-Lead Small Outline Transistor Package [SOT-23]
(RJ-6)
Dim
ensions shown in millimeters
ORDERING GUIDE
Model Temperature Range Package Description Package Option Branding
ADG601BRT-REEL −40°C to +85°C 6-Lead SOT-23 RJ-6 STB
ADG601BRT-REEL7 −40°C to +85°C 6-Lead SOT-23 RJ-6 STB
ADG601BRTZ-REEL
ADG601BRTZ-REEL7
2
2
−40°C to +85°C 6-Lead SOT-23 RJ-6 STB#
−40°C to +85°C 6-Lead SOT-23 RJ-6 STB#
ADG601BRM −40°C to +85°C 8-Lead MSOP RM-8 STB
ADG601BRM-REEL −40°C to +85°C 8-Lead MSOP RM-8 STB
−40°C to +85°C 8-Lead MSOP RM-8 S1G
ADG601CSURF Die
ADG602BRT-REEL −40°C to +85°C 6-Lead SOT-23 RJ-6 SUB
ADG602BRT-REEL7 −40°C to +85°C 6-Lead SOT-23 RJ-6 SUB
ADG602BRTZ-REEL2 −40°C to +85°C 6-Lead SOT-23 RJ-6 S18
ADG602BRTZ-REEL72 −40°C to +85°C 6-Lead SOT-23 RJ-6 S18
ADG602BRM −40°C to +85°C 8-Lead MSOP RM-8 SUB
ADG602BRM-REEL −40°C to +85°C 8-Lead MSOP RM-8 SUB
ADG602BRM-REEL7 −40°C to +85°C 8-Lead MSOP RM-8 SUB
ADG602BRMZ
ADG602BRMZ-REEL7
1
Branding on SOT-23 and MSOP is limited to three characters due to space constraints.
2
Z = RoHS Compliant Part, # denotes RoHS compliant product, may be top or bottom marked.