Datasheet ADG5208 Datasheet (ANALOG DEVICES)

Page 1
4-/8-Channel Multiplexers
ADG5208/ADG5209
Rev. A
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
Trad emarks and registered trademarks are the property of their respective owners.
Fax: 781.461.3113 ©2011–2012 Analog Devices, Inc. All rights reserved.
ADG5208
S1
S8
D
1-OF-8
DECODER
A0 A1 A2 EN
ADG5209
S1A
S4A
DA
S1B
S4B
DB
1-OF-4
DECODER
A0 A1
EN
09917-001
Data Sheet

FEATURES

Latch-up proof
5.5 pF off source capacitance 52 pF off drain capacitance
0.4 pC charge injection Low on resistance: 160 Ω typical ±9 V to ±22 V dual-supply operation 9 V to 40 V single-supply operation 48 V supply maximum ratings Fully specified at ±15 V, ±20 V, +12 V, and +36 V V
to VDD analog signal range
SS
Human body model (HBM) ESD rating
4 kV I/O port to supplies 1 kV I/O port to I/O port 4 kV all other pins

APPLICATIONS

Automatic test equipment Data acquisition Instrumentation Avionics Audio and video switching Communication systems
High Voltage, Latch-Up Proof,

FUNCTIONAL BLOCK DIAGRAMS

Figure 1.

GENERAL DESCRIPTION

The ADG5208/ADG5209 are monolithic CMOS analog multi­plexers comprising eight single channels and four differential channels, respectively. The ADG5208 switches one of eight inputs to a common output, as determined by the 3-bit binary address lines, A0, A1, and A2. The ADG5209 switches one of four differential inputs to a common differential output, as determined by the 2-bit binary address lines, A0 and A1.
An EN input on both devices enables or disables the device. When EN is disabled, all channels switch off. The ultralow capacitance and charge injection of these switches make them ideal solutions for data acquisition and sample-and-hold appli­cations, where low glitch and fast settling are required. Fast switching speed coupled with high signal bandwidth make these devices suitable for video signal switching.
Each switch conducts equally well in both directions when on, and each switch has an input signal range that extends to the power supplies. In the off condition, signal levels up to the supplies are blocked.
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
The ADG5208/ADG5209 do not have V
pins; instead, the logic
L
power supply is generated internally by an on-chip voltage generator.

PRODUCT HIGHLIGHTS

1. Tre nch Isolation Guards Against Latch-Up.
A dielectric trench separates the P and N channel transistors to prevent latch-up even under severe overvoltage conditions.
2. 0.4 pC Charge Injection.
3. Dual-Supply Operation.
For applications where the analog signal is bipolar, the
ADG5208/ADG5209 can be operated from dual supplies
of up to ±22 V.
4. Single-Supply Operation.
For applications where the analog signal is unipolar, the
ADG5208/ADG5209 can be operated from a single rail
power supply of up to 40 V.
5. 3 V Logic-Compatible Digital Inputs.
V
= 2.0 V, V
INH
6. No V
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700
Logic Power Supply Required.
L
= 0.8 V.
INL
www.analog.com
Page 2
ADG5208/ADG5209 Data Sheet

TABLE OF CONTENTS

Features .............................................................................................. 1
Applications ....................................................................................... 1
Functional Block Diagrams ............................................................. 1
General Description ......................................................................... 1
Product Highlights ........................................................................... 1
Revision History ............................................................................... 2
Specifications ..................................................................................... 3
±15 V Dual Supply ....................................................................... 3
±20 V Dual Supply ....................................................................... 4
12 V Single Supply ........................................................................ 5
36 V Single Supply ........................................................................ 6
Continuous Current per Channel, Sx or Dx ............................. 8

REVISION HISTORY

3/12—Rev. 0 to Rev. A
Added 16-Lead LFCSP ....................................................... Universal
Changes to Ordering Guide ........................................................... 22
7/11—Revision 0: Initial Version
Absolute Maximum Ratings ............................................................9
ESD Caution...................................................................................9
Pin Configurations and Function Descriptions ......................... 10
Typical Performance Characteristics ........................................... 12
Test Circuits ..................................................................................... 16
Terminology .................................................................................... 19
Trench Isolation .............................................................................. 20
Applications Information .............................................................. 21
Outline Dimensions ....................................................................... 22
Ordering Guide .......................................................................... 22
Rev. A | Page 2 of 24
Page 3
Data Sheet ADG5208/ADG5209
200
250
280
Ω max
VDD = +13.5 V, VSS = −13.5 V
±0.1
±0.2
±0.4
nA max
±0.2
±0.5
±1.4
nA max
205
245
275
ns max
VS = 10 V; see Figure 33
tON (EN)
145
ns typ
RL = 300 Ω, CL = 35 pF

SPECIFICATIONS

±15 V DUAL SUPPLY

VDD = +15 V ± 10%, VSS = −15 V ± 10%, GND = 0 V, unless otherwise noted.
Table 1.
Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range VDD to VSS V On Resistance, RON 160 Ω typ VS = ±10 V, IS = −1 mA; see Figure 28
On-Resistance Match Between
Channels, ∆R
ON
3.5 Ω typ V
= ±10 V, IS = −1 mA
S
8 9 10 Ω max On-Resistance Flatness, R
40 Ω typ VS = ±10 V, IS = −1 mA
FL AT (O N)
50 65 70 Ω max
LEAKAGE CURRENTS VDD = +16.5 V, VSS = −16.5 V
Source Off Leakage, IS (Off ) ±0.005 nA typ VS = ±10 V, VD = 10 V; see Figure 30
Drain Off Leakage, ID (Off ) ±0.005 nA typ VS = ±10 V, VD = 10 V; see Figure 30 ±0.1 ±0.4 ±1.4 nA max Channel On Leakage, ID (On), IS (On) ±0.01 nA typ VS = VD = ±10 V; see Figure 27
DIGITAL INPUTS
Input High Voltage, V Input Low Voltage, V Input Current, I
INL
2.0 V min
INH
0.8 V max
INL
or I
0.002 µA typ VIN = V
INH
GND
or VDD ±0.1 µA max Digital Input Capacitance, CIN 3 pF typ
DYNAMIC CHARACTERISTICS1
Transition Time, t
170 ns typ RL = 300 Ω, CL = 35 pF
TRANSITION
185 220 245 ns max VS = 10 V; see Figure 35 t
(EN) 120 ns typ RL = 300 Ω, CL = 35 pF
OFF
145 165 180 ns max VS = 10 V; see Figure 35
Break-Before-Make Time Delay, tD 65 ns typ RL = 300 Ω, CL = 35 pF
30 ns min VS1 = VS2 = 10 V; see Figure 34 Charge Injection, Q
0.4 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF;
INJ
see Figure 36
Off Isolation −90 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see
Figure 31
Channel-to-Channel Crosstalk −90 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see
Figure 29
−3 dB Bandwidth RL = 50 Ω, CL = 5 pF; see Figure 32
ADG5208 54 MHz typ ADG5209 133 MHz typ
Insertion Loss −6.4 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see
Figure 32 CS (Off ) 5.5 pF typ VS = 0 V, f = 1 MHz CD (Off )
ADG5208 52 pF typ VS = 0 V, f = 1 MHz ADG5209 26 pF typ VS = 0 V, f = 1 MHz
Rev. A | Page 3 of 24
Page 4
ADG5208/ADG5209 Data Sheet
DIGITAL INPUTS
30
ns min
VS1 = VS2 = 10 V; see Figure 34
Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments
CD (On), CS (On)
ADG5208 58 pF typ VS = 0 V, f = 1 MHz ADG5209 31 pF typ VS = 0 V, f = 1 MHz
POWER REQUIREMENTS VDD = +16.5 V, VSS = −16.5 V
IDD 45 µA typ Digital inputs = 0 V or VDD
55 70 µA max
ISS 0.001 µA typ Digital inputs = 0 V or VDD
1 µA max
VDD/VSS ±9/±22 V min/V max GND = 0 V
1
Guaranteed by design; not subject to production test.

±20 V DUAL SUPPLY

VDD = +20 V ± 10%, VSS = −20 V ± 10%, GND = 0 V, unless otherwise noted.
Table 2.
Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range VDD to VSS V On Resistance, RON 140 Ω typ VS = ±15 V, IS = −1 mA; see Figure 28 160 200 230 Ω max VDD = +18 V, VSS = −18 V On-Resistance Match Between
Channels, ∆R
ON
8 9 10 Ω max On-Resistance Flatness, R
FL AT (O N)
45 55 60 Ω max
LEAKAGE CURRENTS VDD = +22 V, VSS = −22 V
Source Off Leakage, IS (Off ) ±0.005 nA typ VS = ±15 V, VD = 15 V; see Figure 30 ±0.1 ±0.2 ±0.4 nA max Drain Off Leakage, ID (Off ) ±0.005 nA typ VS = ±15 V, VD = 15 V; see Figure 30 ±0.1 ±0.4 ±1.4 nA max Channel On Leakage, ID (On), IS (On) ±0.01 nA typ VS = VD = ±15 V; see Figure 27 ±0.2 ±0.5 ±1.4 nA max
3.5 Ω typ V
= ±15 V, IS = −1 mA
S
34 Ω typ VS = ±15 V, IS = −1 mA
Input High Voltage, V Input Low Voltage, V Input Current, I
INL
±0.1 µA max Digital Input Capacitance, CIN 3 pF typ
DYNAMIC CHARACTERISTICS1
Transition Time, t 195 225 255 ns max VS = 10 V; see Figure 33 tON (EN) 145 ns typ RL = 300 Ω, CL = 35 pF 170 200 225 ns max VS = 10 V; see Figure 35 t
(EN) 120 ns typ RL = 300 Ω, CL = 35 pF
OFF
140 155 170 ns max VS = 10 V; see Figure 35 Break-Before-Make Time Delay, tD 55 ns typ RL = 300 Ω, CL = 35 pF
Charge Injection, Q
Off Isolation −90 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see
Channel-to-Channel Crosstalk −90 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz;
2.0 V min
INH
0.8 V max
INL
or I
0.002 µA typ VIN = V
INH
160 ns typ RL = 300 Ω, CL = 35 pF
TRANSITION
0.3 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF; see
INJ
GND
or VDD
Figure 36
Figure 31
see Figure 29
Rev. A | Page 4 of 24
Page 5
Data Sheet ADG5208/ADG5209
ADG5208
57
pF typ
VS = 0 V, f = 1 MHz
Parameter
25°C
−40°C to +85°C
−40°C to +125°C
Unit
Test Conditions/Comments
LEAKAGE CURRENTS
VDD = 13.2 V, VSS = 0 V
Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments
−3 dB Bandwidth RL = 50 Ω, CL = 5 pF; see Figure 32
ADG5208 60 MHz typ ADG5209 130 MHz typ
Insertion Loss −5.6 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz;
see Figure 32 CS (Off ) 5.5 pF typ VS = 0 V, f = 1 MHz CD (Off )
ADG5208 51 pF typ VS = 0 V, f = 1 MHz ADG5209 26 pF typ VS = 0 V, f = 1 MHz
CD (On), CS (On)
ADG5209 31 pF typ VS = 0 V, f = 1 MHz
POWER REQUIREMENTS VDD = +22 V, VSS = −22 V
IDD 50 µA typ Digital inputs = 0 V or VDD 70 110 µA max ISS 0.001 µA typ Digital inputs = 0 V or VDD 1 µA max VDD/VSS ±9/±22 V min/V max GND = 0 V
1
Guaranteed by design; not subject to production test.

12 V SINGLE SUPPLY

VDD = 12 V ± 10%, VSS = 0 V, GND = 0 V, unless otherwise noted.
Table 3.
ANALOG SWITCH
Analog Signal Range 0 V to VDD V On Resistance, RON 350 Ω typ VS = 0 V to 10 V, IS = −1 mA; see
Figure 28 500 610 700 Ω max VDD = 10.8 V, VSS = 0 V On-Resistance Match Between
Channels, ∆R
ON
20 22 24 Ω max On-Resistance Flatness, R
FL AT (O N)
280 335 370 Ω max
Source Off Leakage, IS (Off ) ±0.005 nA typ VS = 1 V/10 V, VD = 10 V/1 V; see
±0.1 ±0.2 ±0.4 nA max Drain Off Leakage, ID (Off ) ±0.005 nA typ VS = 1 V/10 V, VD = 10 V/1 V; see
±0.1 ±0.4 ±1.4 nA max
Channel On Leakage, ID (On), IS (On) ±0.01 nA typ VS = VD = 1 V/10 V; see Figure 27
±0.2 ±0.5 ±1.4 nA max
DIGITAL INPUTS
Input High Voltage, V Input Low Voltage, V Input Current, I
INL
2.0 V min
INH
0.8 V max
INL
or I
0.002 µA typ VIN = V
INH
±0.1 µA max Digital Input Capacitance, CIN 3 pF typ
5 Ω typ V
= 0 V to 10 V, IS = −1 mA
S
160 Ω typ VS = 0 V to 10 V, IS = −1 mA
Figure 30
Figure 30
or VDD
GND
Rev. A | Page 5 of 24
Page 6
ADG5208/ADG5209 Data Sheet
275
345
400
ns max
VS = 8 V; see Figure 35
50 65
µA max
On-Resistance Match Between
3.5
Ω typ
VS = 0 V to 30 V, IS = −1 mA ±0.1
±0.2
±0.4
nA max
Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments
DYNAMIC CHARACTERISTICS1
Transition Time, t 270 330 380 ns max VS = 8 V; see Figure 33 tON (EN) 215 ns typ RL = 300 Ω, CL = 35 pF
t
(EN) 115 ns typ RL = 300 Ω, CL = 35 pF
OFF
140 160 175 ns max VS = 8 V; see Figure 35 Break-Before-Make Time Delay, tD 135 ns typ RL = 300 Ω, CL = 35 pF
70 ns min VS1 = VS2 = 8 V; see Figure 34
Charge Injection, Q
Off Isolation −90 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz;
Channel-to-Channel Crosstalk −90 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz;
−3 dB Bandwidth RL = 50 Ω, CL = 5 pF; see Figure 32
ADG5208 60 MHz typ ADG5209 120 MHz typ
Insertion Loss −8.8 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz;
CS (Off ) 6 pF typ VS = 6 V, f = 1 MHz CD (Off )
ADG5208 56 pF typ VS = 6 V, f = 1 MHz ADG5209 28 pF typ VS = 6 V, f = 1 MHz
CD (On), CS (On)
ADG5208 63 pF typ VS = 6 V, f = 1 MHz ADG5209 35 pF typ VS = 6 V, f = 1 MHz
POWER REQUIREMENTS VDD = 13.2 V
IDD 40 µA typ Digital inputs = 0 V or VDD
210 ns typ RL = 300 Ω, CL = 35 pF
TRANSITION
0.3 pC typ VS = 6 V, RS = 0 Ω, CL = 1 nF; see
INJ
Figure 36
see Figure 31
see Figure 29
see Figure 32
VDD 9/40 V min/V max GND = 0 V, VSS = 0 V
1
Guaranteed by design; not subject to production test.

36 V SINGLE SUPPLY

VDD = 36 V ± 10%, VSS = 0 V, GND = 0 V, unless otherwise noted.
Table 4.
Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to VDD V On Resistance, RON 150 Ω typ VS = 0 V to 30 V, IS = −1 mA; see
Figure 28
170 215 245 Ω max VDD = 32.4 V, VSS = 0 V
Channels, ∆RON 8 9 10 Ω max On-Resistance Flatness, R 55 65 70 Ω max
LEAKAGE CURRENTS VDD = 39.6 V, VSS = 0 V
Source Off Leakage, IS (Off ) ±0.005 nA typ VS = 1 V/30 V, VD = 30 V/1 V; see
35 Ω typ VS = 0 V to 30 V, IS = −1 mA
FL AT (O N)
Figure 30
Rev. A | Page 6 of 24
Page 7
Data Sheet ADG5208/ADG5209
Input Low Voltage, V
0.8
V max
CD (Off )
Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments
Drain Off Leakage, ID (Off ) ±0.005 nA typ VS = 1 V/30 V, VD = 30 V/1 V; see
Figure 30
±0.1 ±0.4 ±1.4 nA max
Channel On Leakage, ID (On), IS (On) ±0.01 nA typ VS = VD = 1 V/30 V; see Figure 27
±0.2 ±0.5 ±1.4 nA max
DIGITAL INPUTS
Input High Voltage, V
Input Current, I
INL
±0.1 µA max Digital Input Capacitance, CIN 3 pF typ
DYNAMIC CHARACTERISTICS1
Transition Time, t 230 245 259 ns max VS = 18 V; see Figure 33 tON (EN) 170 ns typ RL = 300 Ω, CL = 35 pF 210 230 255 ns max VS = 18 V; see Figure 35 t
(EN) 125 ns typ RL = 300 Ω, CL = 35 pF
OFF
180 180 180 ns max VS = 18 V; see Figure 35 Break-Before-Make Time Delay, tD 70 ns typ RL = 300 Ω, CL = 35 pF
35 ns min VS1 = VS2 = 18 V; see Figure 34
Charge Injection, Q
Off Isolation −90 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz;
Channel-to-Channel Crosstalk −90 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz;
−3 dB Bandwidth RL = 50 Ω, CL = 5 pF; see Figure 32
ADG5208 65 MHz typ ADG5209 130 MHz typ
Insertion Loss −6 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz;
CS (Off ) 5.5 pF typ VS = 18 V, f = 1 MHz
2.0 V min
INH
INL
or I
0.002 µA typ VIN = V
INH
185 ns typ RL = 300 Ω, CL = 35 pF
TRANSITION
0.4 pC typ VS = 18 V, RS = 0 Ω, CL = 1 nF;
INJ
GND
or VDD
see Figure 36
see Figure 31
see Figure 29
see Figure 32
ADG5208 51 pF typ VS = 18 V, f = 1 MHz ADG5209 25 pF typ VS = 18 V, f = 1 MHz
CD (On), CS (On)
ADG5208 57 pF typ VS = 18 V, f = 1 MHz ADG5209 32 pF typ VS = 18 V, f = 1 MH z
POWER REQUIREMENTS VDD = 39.6 V
IDD 80 µA typ Digital inputs = 0 V or VDD 100 130 µA max VDD 9/40 V min/V max GND = 0 V, VSS = 0 V
1
Guaranteed by design; not subject to production test.
Rev. A | Page 7 of 24
Page 8
ADG5208/ADG5209 Data Sheet
VDD = +15 V, VSS = −15 V

CONTINUOUS CURRENT PER CHANNEL, Sx, D, OR Dx

Table 5. ADG5208
Parameter 25°C 85°C 125°C Unit
CONTINUOUS CURRENT, Sx OR D
VDD = +15 V, VSS = −15 V
TSSOP (θJA = 112.6°C/W) 40 24 14.5 mA maximum LFCSP (θJA = 30.4°C/W) 69 37 18 mA maximum
VDD = +20 V, VSS = −20 V
TSSOP (θJA = 112.6°C/W) 42 26.5 14.5 mA maximum LFCSP (θJA = 30.4°C/W) 75 40 18 mA maximum
VDD = 12 V, VSS = 0 V
TSSOP (θJA = 112.6°C/W) 28 19 12 mA maximum LFCSP (θJA = 30.4°C/W) 40 25 14.5 mA maximum
VDD = 36 V, VSS = 0 V
TSSOP (θJA = 112.6°C/W) 40 26 14.5 mA maximum LFCSP (θJA = 30.4°C/W) 72 39 18 mA maximum
Table 6. ADG5209
Parameter 25°C 85°C 125°C Unit
CONTINUOUS CURRENT, Sx OR Dx
TSSOP (θJA = 112.6°C/W) 29 19 12 mA maximum LFCSP (θJA = 30.4°C/W) 51 30 16 mA maximum
VDD = +20 V, VSS = −20 V
TSSOP (θJA = 112.6°C/W) 30 20 12.5 mA maximum LFCSP (θJA = 30.4°C/W) 55 32 17 mA maximum
VDD = 12 V, VSS = 0 V
TSSOP (θJA = 112.6°C/W) 20 14 10 mA maximum LFCSP (θJA = 30.4°C/W) 29 20 12.5 mA maximum
VDD = 36 V, VSS = 0 V
TSSOP (θJA = 112.6°C/W) 30 20 12.5 mA maximum LFCSP (θJA = 30.4°C/W) 54 31 17 mA maximum
Rev. A | Page 8 of 24
Page 9
Data Sheet ADG5208/ADG5209
Junction Temperature
150°C
Reflow Soldering Peak
260(+0/−5)°C

ABSOLUTE MAXIMUM RATINGS

TA = 25°C, unless otherwise noted.
Table 7.
Parameter Rating
VDD to VSS 48 V VDD to GND −0.3 V to +48 V VSS to GND +0.3 V to −48 V Analog Inputs1 VSS − 0.3 V to VDD + 0.3 V or
30 mA, whichever occurs first
Digital Inputs1 VSS − 0.3 V to VDD + 0.3 V or
30 mA, whichever occurs first
Peak Current, Sx, D, or Dx Pins
ADG5208 126 mA (pulsed at 1 ms, 10%
duty cycle maximum)
ADG5209 92 mA (pulsed at 1 ms, 10%
duty cycle maximum)
Continuous Current, Sx, D, or
Temperature Range
2
Dx Pins
Operating −40°C to +125°C Storage −65°C to +150°C
Data + 15%
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Only one absolute maximum rating can be applied at any one time.

ESD CAUTION

Thermal Impedance, θJA
16-Lead TSSOP (4-Layer
Board)
16-Lead LFCSP (4-Layer
Board)
Temperature, Pb Free
HBM ESD
I/O Port to Supplies 4 kV I/O Port to I/O Port 1 kV All Other Pins 4 kV
1
Overvoltages at the Ax, EN, Sx, D, and Dx pins are clamped by internal
diodes. Limit current to the maximum ratings given.
2
See Table 5 and Table 6.
112.6°C/W
30.4°C/W
Rev. A | Page 9 of 24
Page 10
ADG5208/ADG5209 Data Sheet
A0
1
EN
2
V
SS
3
S1
4
A1
16
A2
15
GND
14
V
DD
13
S2
5
S5
12
S3
6
S6
11
S4
7
S7
10
D
8
S8
9
ADG5208
TOP VIEW
(Not to Scale)
09917-002
12 11 10
1
3 4
GND V
DD
S5
9
S6
V
SS
S2
2
S1
S3
6 D
5S4
7S8
8 S7
16
EN
15
A0
14
A1
13
A2
TOP VIEW
(Not to S cale)
ADG5208
NOTES
1. THE EXPOSED PAD IS CONNECTE D INTERNALLY . FOR INCREASED REL IABILIT Y OF THE SO LDER JOINT S AND MAXIMUM THERMAL CAPABILITY, IT IS RECOMMENDED THAT THE P AD BE S OLDERED TO THE SUBSTRATE , V
SS
.
09917-003
2
16
EN
Active High Digital Input. When low, the device is disabled and all switches are off. When high, the 11 9 S6
Source Terminal 6. This pin can be an input or an output.

PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS

Figure 2. ADG5208 Pin Configuration (TSSOP)
Figure 3. ADG5208 Pin Configuration (LFCSP)
Table 8. ADG5208 Pin Function Descriptions
Pin No.
TSSOP LFCSP Mnemonic Description
1 15 A0 Logic Control Input.
Ax logic inputs determine the on switches.
3 1 VSS Most Negative Power Supply Potential. In single-supply applications, this pin can be connected
to ground. 4 2 S1 Source Terminal 1. This pin can be an input or an output. 5 3 S2 Source Terminal 2. This pin can be an input or an output. 6 4 S3 Source Terminal 3. This pin can be an input or an output. 7 5 S4 Source Terminal 4. This pin can be an input or an output. 8 6 D Drain Terminal. This pin can be an input or an output. 9 7 S8 Source Terminal 8. This pin can be an input or an output. 10 8 S7 Source Terminal 7. This pin can be an input or an output.
12 10 S5 Source Terminal 5. This pin can be an input or an output. 13 11 VDD Most Positive Power Supply Potential. 14 12 GND Ground (0 V) Reference. 15 13 A2 Logic Control Input. 16 14 A1 Logic Control Input. EP Exposed Pad The exposed pad is connected internally. For increased reliability of the solder joints and
maximum thermal capability, it is recommended that the pad be soldered to the substrate, V
SS
.
Table 9. ADG5208 Truth Table
A2 A1 A0 EN On Switch
X1 X1 X1 0 None 0 0 0 1 1 0 0 1 1 2 0 1 0 1 3 0 1 1 1 4 1 0 0 1 5 1 0 1 1 6 1 1 0 1 7 1 1 1 1 8
1
X is don’t care.
Rev. A | Page 10 of 24
Page 11
Data Sheet ADG5208/ADG5209
A0
1
EN
2
V
SS
3
S1A
4
A1
16
GND
15
V
DD
14
S1B
13
S2A
5
S2B
12
S3A
6
S3B
11
S4A
7
S4B
10
DA
8
DB
9
ADG5209
TOP VIEW
(Not to Scale)
09917-004
12 11 10
1
3 4
V
DD
S1B S2B
9
S3B
V
SS
S2A
2
S1A
S3A
6 DA
5S4A
7DB
8
S4B
16
EN
15
A0
14
A1
13
GND
TOP VIEW
(Not to S cale)
ADG5209
NOTES
1. THE EXPOSED PAD IS CONNECTE D INTERNALLY . FOR INCREASED REL IABILIT Y OF THE SOLDER JOINTS AND MAXIMUM THERMAL CAPABILITY, IT IS RECOMMENDED THAT THE P AD BE S OLDERED TO THE SUBSTRAT E , V
SS
.
09917-005
10 8 S4B
Source Terminal 4B. This pin can be an input or an output.
15
13
GND
Ground (0 V) Reference.
Figure 4. ADG5209 Pin Configuration (TSSOP)
Figure 5. ADG5209 Pin Configuration (LFCSP)
Table 10. ADG5209 Pin Function Descriptions
Pin No.
TSSOP LFCSP Mnemonic Description
1 15 A0 Logic Control Input. 2 16 EN Active High Digital Input. When low, the device is disabled and all switches are off. When high,
Ax logic inputs determine the on switches.
3 1 VSS Most Negative Power Supply Potential. In single-supply applications, this pin can be connected
to ground. 4 2 S1A Source Terminal 1A. This pin can be an input or an output. 5 3 S2A Source Terminal 2A. This pin can be an input or an output. 6 4 S3A Source Terminal 3A. This pin can be an input or an output. 7 5 S4A Source Terminal 4A. This pin can be an input or an output. 8 6 DA Drain Terminal A. This pin can be an input or an output. 9 7 DB Drain Terminal B. This pin can be an input or an output.
11 9 S3B Source Terminal 3B. This pin can be an input or an output. 12 10 S2B Source Terminal 2B. This pin can be an input or an output. 13 11 S1B Source Terminal 1B. This pin can be an input or an output. 14 12 VDD Most Positive Power Supply Potential.
16 14 A1 Logic Control Input. EP Exposed Pad The exposed pad is connected internally. For increased reliability of the solder joints and maximum
thermal capability, it is recommended that the pad be soldered to the substrate, V
.
SS
Table 11. ADG5209 Truth Table
A1 A0 EN On Switch Pair
X1 X1 0 None 0 0 1 1 0 1 1 2 1 0 1 3 1 1 1 4
1
X is don’t care.
Rev. A | Page 11 of 24
Page 12
ADG5208/ADG5209 Data Sheet
160
0
20
40
60
80
100
120
140
–25 –20 –15 –10 –5 0 5 10 15 20 25
ON RESISTANCE (Ω)
VS, V
D
(V)
TA = 25°C
VDD = +18V V
SS
= –18V
V
DD
= +20V
V
SS
= –20V
V
DD
= +22V
V
SS
= –22V
09917-006
250
200
150
100
50
0
–20 –15 –10 –5 0 5 10 15 20
ON RESISTANCE (Ω)
V
S
, VD (V)
T
A
= 25°C
VDD = +9V V
SS
= –9V
V
DD
= +13.2V
V
SS
= –13.2V
V
DD
= +15V
V
SS
= –15V
VDD = +16.5V V
SS
= –16.5V
09917-007
500
450
400
350
300
250
200
150
100
50
0
0 1412108642
ON RESISTANCE (Ω)
VS, VD (V)
TA = 25°C
VDD = 9V V
SS
= 0V
V
DD
= 10.8V
V
SS
= 0V
VDD = 12V V
SS
= 0V
VDD = 13.2V V
SS
= 0V
09917-008
160
140
120
100
80
60
40
20
0
0 403530252015105
ON RESISTANCE (Ω)
VS, VD (V)
TA = 25°C
VDD = 32.4V V
SS
= 0V
VDD = 36V V
SS
= 0V
V
DD
= 39.6V
V
SS
= 0V
09917-009
250
200
150
100
50
0
–15 –10 –5 0 5 10 15
ON RESISTANCE (Ω)
VS,VD (V)
VDD = +15V V
SS
= –15V
TA = +125°C
T
A
= +85°C
T
A
= +25°C
T
A
= –40°C
09917-010
200
160
120
80
40
180
140
100
60
20
0
–20 –15 –10 –5 0 5 10 2015
ON RESISTANCE (Ω)
VS,VD (V)
VDD = +20V V
SS
= –20V
T
A
= +125°C
TA = +85°C
T
A
= +25°C
T
A
= –40°C
09917-011

TYPICAL PERFORMANCE CHARACTERISTICS

Figure 6. RON as a Function of VS, VD (±20 V Dual Supply)
Figure 7. RON as a Function of VS, VD (±15 V Dual Supply)
Figure 9. RON as a Function of VS, VD (36 V Single Supply)
Figure 10. RON as a Function of VS, VD for Different Temperatures,
±15 V Dual Supply
Figure 8. RON as a Function of VS, VD (12 V Single Supply)
Figure 11. RON as a Function of VS, VD for Different Temperatures,
±20 V Dual Supply
Rev. A | Page 12 of 24
Page 13
Data Sheet ADG5208/ADG5209
500
400
300
200
100
450
350
250
150
50
0
0 2 4 6 8 10 12
ON RESISTANCE (Ω)
VS,VD (V)
VDD = 12V V
SS
= 0V
T
A
= +125°C
T
A
= +85°C
T
A
= +25°C
T
A
= –40°C
09917-012
250
200
100
150
50
0
0 3530252015105
ON RESISTANCE (Ω)
VS,VD (V)
VDD = 36V V
SS
= 0V
T
A
= +125°C
T
A
= +85°C
T
A
= +25°C
T
A
= –40°C
09917-013
50
–250
–200
–150
–100
–50
0
0 1251007550
25
LEAKAGE CURRENT (pA)
TEMPERATURE (°C)
VDD = +15V V
SS
= –15V
V
BIAS
= +10V/–10V
IS (OFF) + –
I
S
(OFF) – +
ID, I
S
(ON) + +
ID (OFF) + –
ID (OFF) – +
ID, I
S
(ON) – –
09917-014
100
–200
–150
–100
–50
0
50
0 1251007550
25
LEAKAGE CURRENT (pA)
TEMPERATURE (°C)
V
DD
= +20V
V
SS
= –20V
V
BIAS
= +15V/–15V
I
S
(OFF) + –
I
S
(OFF) – +
I
D
, I
S
(ON) + +
I
D
(OFF) + –
I
D
(OFF) – +
I
D
, I
S
(ON) – –
09917-015
100
–700
–600
–500
–400
–300
–200
–100
0
0 125100755025
LEAKAGE CURRENT (pA)
TEMPERATURE (°C)
VDD = 12V V
SS
= 0V
V
BIAS
= 1V/10V
IS (OFF) + –
IS (OFF) – +
ID, IS (ON) + +
ID (OFF) + –
I
D
(OFF) – +
I
D
, IS (ON) – –
09917-016
200
–1000
–800
–600
–400
–200
0
0 12510075
5025
LEAKAGE CURRENT (pA)
TEMPERATURE (°C)
VDD = 36V V
SS
= 0V
V
BIAS
= 1V/30V
IS (OFF) + –
I
S
(OFF) – +
ID, I
S
(ON) + +
ID (OFF) + –
I
D
(OFF) – +
ID, IS (ON) – –
09917-017
Figure 12. RON as a Function of VS, VD for Different Temperatures,
12 V Single Supply
Figure 13. RON as a Function of VS, VD for Different Temperatures,
36 V Single Supply
Figure 15. Leakage Currents vs. Temperature, ±20 V Dual Supply
Figure 16. Leakage Currents vs. Temperature, 12 V Single Supply
Figure 14. Leakage Currents vs. Temperature, ±15 V Dual Supply
Figure 17. Leakage Currents vs. Temperature, 36 V Single Supply
Rev. A | Page 13 of 24
Page 14
ADG5208/ADG5209 Data Sheet
0
–140
–120
–100
–80
–60
–40
–20
10k 100k 1G100M10M1M
OFF ISOLATION (dB)
FREQUENCY ( Hz )
TA = 25°C V
DD
= +15V
V
SS
= –15V
09917-018
0
–140
–120
–100
–80
–60
–40
–20
10k 100k 1G100M10M1M
CROSSTAL K ( dB)
FREQUENCY ( Hz )
T
A
= 25°C
V
DD
= +15V
V
SS
= –15V
BETWEEN S 1 AND S 2
BETWEEN S 1 AND S 8
09917-019
16
0
2
4
6
8
10
12
14
–20 –10 0 10 20 30 40
CHARGE INJECT ION (pC)
VS (V)
TA = 25°C DEMUX (DRAIN T O SOURCE)
VDD = +20V V
SS
= –20V
V
DD
= +15V
V
SS
= –15V
V
DD
= +36V
V
SS
= 0V
V
DD
= +12V
V
SS
= 0V
09917-020
0
–120
–100
–80
–60
–40
–20
1k 10k 100k 10M1M
ACPSRR (dB)
FREQUENCY ( Hz )
T
A
= 25°C
V
DD
= +15V
V
SS
= –15V
NO DECOUPL ING
CAPACITORS
DECOUPLING
CAPACITORS
09917-021
–6
–12
–11
–10
–9
–8
–7
100k 1M 10M 1G100M
ATTENUATION (dB)
FREQUENCY ( Hz )
T
A
= 25°C
V
DD
= +15V
V
SS
= –15V
ADG5208 ADG5209
09917-023
6
–2
–1
0
1
2
3
4
5
–20 –10 0 10 20 30 40
CHARGE INJECT ION (pC)
VS (V)
TA = 25°C MUX (SOURCE TO DRAIN)
VDD = +20V V
SS
= –20V
V
DD
= +15V
V
SS
= –15V
V
DD
= +36V
V
SS
= 0V
V
DD
= +12V
V
SS
= 0V
09917-039
Figure 18. Off Isolation vs. Frequency, ±15 V Dual Supply
Figure 19. Crosstalk vs. Frequency, ±15 V Dual Supply
Figure 21. ACPSRR vs. Frequency, ±15 V Dual Supply
Figure 22. Bandwidth
Figure 20. Charge Injection vs. Source Voltage, Drain to Source
Figure 23. Charge Injection vs. Source Voltage, Source to Drain
Rev. A | Page 14 of 24
Page 15
Data Sheet ADG5208/ADG5209
350
0
50
100
150
200
250
300
–40 –20 0 20 40 60 80 100 120
TIME (ns)
TEMPERATURE (°C)
VDD = +12V V
SS
= 0V
V
DD
= +15V
V
SS
= –15V
V
DD
= +20V
V
SS
= –20V
V
DD
= +36V
V
SS
= 0V
09917-024
40
35
30
25
20
15
10
5
0
–15 –10 151050–5
CAPACITANCE (pF)
VS (V)
TA = 25°C V
DD
= +15V
V
SS
= –15V
SOURCE/DRAI N ON
DRAIN OFF
SOURCE OF F
09917-025
80
70
60
50
40
30
20
10
0
–15 –10 151050–5
CAPACITANCE (pF)
VS (V)
TA = 25°C V
DD
= +15V
V
SS
= –15V
SOURCE/DRAI N ON
DRAIN OFF
SOURCE OF F
09917-040
Figure 24. t
Times vs. Temperature
TRANSITION
Figure 25. ADG5209 Capacitance vs. Source Voltage, ±15 V Dual Supply
Figure 26. ADG5208 Capacitance vs. Source Voltage, ±15 V Dual Supply
Rev. A | Page 15 of 24
Page 16
ADG5208/ADG5209 Data Sheet
Sx D
A
V
D
I
D
(ON)
NC
NC = NO CONNECT
09917-027
Sx D
V
S
V1
I
DS
RON = V1/I
DS
09917-028
CHANNEL-TO - CHANNE L CROSSTAL K = 20 log
V
OUT
GND
S1
D
S2
V
OUT
NETWORK
ANALYZER
R
L
50Ω
R
L
50Ω
V
S
V
S
V
DD
V
SS
0.1µF
V
DD
0.1µF
V
SS
09917-029
V
S
V
D
Sx D
A
A
I
S
(OFF) I
D
(OFF)
09917-031
V
OUT
50Ω
NETWORK
ANALYZER
R
L
50Ω
Sx
D
V
S
V
DD
V
SS
0.1µF
V
DD
0.1µF
V
SS
GND
50Ω
OFF ISOLATION = 20 log
V
OUT
V
S
09917-030
V
OUT
50Ω
NETWORK ANALYZER
R
L
50Ω
Sx
D
INSERTION LOSS = 20 log
V
OUT
WITH SWITCH
V
OUT
WITHOUT SWITCH
V
S
V
DD
V
SS
0.1µF
V
DD
0.1µF
V
SS
GND
09917-033

TEST CIRCUITS

Figure 27. On Leakage
Figure 28. On Resistance
Figure 30. Off Leakage
Figure 31. Off Isolation
Figure 29. Channel-to-Channel Crosstalk
Figure 32. Bandwidth
Rev. A | Page 16 of 24
Page 17
Data Sheet ADG5208/ADG5209
3V
0V
OUTPUT
t
r
< 20ns
t
f
< 20ns ADDRESS DRIVE (V
IN
)
t
TRANSITION
t
TRANSITION
50% 50%
90%
90%
OUTPUT
ADG5208*
A0 A1 A2
50Ω
300Ω
GND
S1
S2 TO S7
S8
D
35pF
V
IN
2.0V EN
V
DD
V
SS
V
DD
V
SS
V
S1
V
S8
*
SIMIL AR CONNECTION FOR ADG5209.
09917-034
OUTPUT
ADG5208*
A0 A1 A2
50Ω
300Ω
GND
S1
S2 TO S7
S8
D
35pF
V
IN
2.0V
EN
V
DD
V
SS
V
DDVSS
V
S
*
SIMIL AR CONNECTION FOR ADG5209.
3V
0V
OUTPUT
80% 80%
ADDRESS DRIVE (V
IN
)
t
D
09917-035
OUTPUT
ADG5208*
A0 A1 A2
50Ω
300Ω
GND
S1
S2 TO S8
D
35pF
V
IN
EN
V
DD
V
SS
V
DDVSS
V
S
*SIMIL AR CONNECTION FOR ADG5209.
3V
0V
OUTPUT
50% 50%
t
OFF
(EN)
t
ON
(EN)
0.9V
OUT
0.1V
OUT
ENABLE DRIVE (VIN)
09917-036
Figure 33. Address to Output Switching Times, t
TRANSITION
Figure 34. Break-Before-Make Time Delay, t
D
(EN), t
(EN)
OFF
Figure 35. Enable Delay, t
Rev. A | Page 17 of 24
ON
Page 18
ADG5208/ADG5209 Data Sheet
3V
V
IN
V
OUT
Q
INJ
= C
L
× ΔV
OUT
ΔV
OUT
DS
EN
GND
C
L
1nF
V
OUT
V
IN
R
S
V
S
V
DD
V
SS
V
DDVSS
A0 A1 A2
ADG5208*
*SIMIL AR CONNECTION FOR ADG5209.
09917-037
Figure 36. Charge Injection
Rev. A | Page 18 of 24
Page 19
Data Sheet ADG5208/ADG5209

TERMINOLOGY

IDD
I
represents the positive supply current.
DD
I
SS
I
represents the negative supply current.
SS
V
, VS
D
V
and VS represent the analog voltage on Terminal D and
D
Terminal S, respec tively.
R
ON
R
is the ohmic resistance between Terminal D and
ON
Terminal S.
∆R
ON
∆R
represents the difference between the RON of any two
ON
channels.
R
FL AT (ON)
Flatness that is defined as the difference between the maximum and minimum value of on resistance measured over the specified analog signal range is represented by R
(Off)
I
S
I
(Off) is the source leakage current with the switch off.
S
I
(Off)
D
I
(Off) is the drain leakage current with the switch off.
D
(On), IS (On)
I
D
I
(On) and IS (On) represent the channel leakage currents with
D
FLAT (ON)
.
the switch on.
V
INL
V
is the maximum input voltage for Logic 0.
INL
V
INH
V
is the minimum input voltage for Logic 1.
INH
I
, I
INL
INH
I
INL
and I
represent the low and high input currents of the
INH
digital inputs.
C
(Off)
D
C
(Off) represents the off switch drain capacitance, which is
D
measured with reference to ground.
C
(Off)
S
C
(Off) represents the off switch source capacitance, which is
S
measured with reference to ground.
C
(On), CS (On)
D
C
(On) and CS (On) represent on switch capacitances, which
D
are measured with reference to ground.
C
IN
C
represents digital input capacitance.
IN
t
(EN)
ON
t
(EN) represents the delay time between the 50% and 90%
ON
points of the digital input and switch on condition.
t
(EN)
OFF
t
(EN) represents the delay time between the 50% and 90%
OFF
points of the digital input and switch off condition.
t
TRANSIT ION
t
TRANSITION
represents the delay time between the 50% and 90% points of the digital inputs and the switch on condition when switching from one address state to another.
Break-Before-Make Time Delay (t
t
represents the off time measured between the 80% point of
D
)
D
both switches when switching from one address state to an other.
Off Isolation
Off isolation is a measure of unwanted signal coupling through an off channel.
Charge Injection
Charge injection is a measure of the glitch impulse transferred from the digital input to the analog output during switching.
Crosstalk
Crosstalk is a measure of unwanted signal that is coupled through from one channel to another as a result of parasitic capacitance.
Bandwidth
Bandwidth is the frequency at which the output is attenuated by 3 dB.
On Response
On response is the frequency response of the on switch.
AC Power Supply Rejection Ratio (ACPSRR)
ACPSRR is a measure of the ability of a device to avoid coupling noise and spurious signals that appear on the supply voltage pin to the output of the switch. The dc voltage on the device is modulated by a sine wave of 0.62 V p-p. The ratio of the amplitude of signal on the output to the amplitude of the modulation is the ACPSRR.
Rev. A | Page 19 of 24
Page 20
ADG5208/ADG5209 Data Sheet
NMOS
PMOS
P WELL N WE LL
BURIED OXI DE LAYER
HANDLE WAFE R
TRENCH
09917-038

TRENCH ISOLATION

In the ADG5208/ADG5209, an insulating oxide layer (trench) is placed between the NMOS and the PMOS transistors of each CMOS switch. Parasitic junctions, which occur between the transistors in junction isolated switches, are eliminated, and the result is a completely latch-up proof switch.
In junction isolation, the N and P wells of the PMOS and NMOS transistors form a diode that is reverse-biased under normal operation. However, during overvoltage conditions, this diode can become forward-biased. A silicon controlled rectifier (SCR) type circuit is formed by the two transistors, causing a significant amplification of the current that, in turn, leads to latch-up. With trench isolation, this diode is removed, and the result is a latch-up proof switch.
Figure 37. Trench Isolation
Rev. A | Page 20 of 24
Page 21
Data Sheet ADG5208/ADG5209

APPLICATIONS INFORMATION

The ADG52xx family of switches and multiplexers provides a robust solution for instrumentation, industrial, automotive, aerospace, and other harsh environments that are prone to latch-up, which is an undesirable high current state that can lead to device failure and persist until the power supply is turned off. The ADG5208/ADG5209 high voltage switches allow single-supply operation from 9 V to 40 V and dual-supply operation from ±9 V to ±22 V.
Rev. A | Page 21 of 24
Page 22
ADG5208/ADG5209 Data Sheet
16
9
81
PIN 1
SEATING PLANE
8° 0°
4.50
4.40
4.30
6.40
BSC
5.10
5.00
4.90
0.65
BSC
0.15
0.05
1.20 MAX
0.20
0.09
0.75
0.60
0.45
0.30
0.19
COPLANARITY
0.10
COMPLI ANT TO JEDEC STANDARDS MO-153-AB
2.70
2.60 SQ
2.50
COMPLIANT
TO
JEDEC STANDARDS MO-220-WGGC.
1
0.65
BSC
BOTTOMVIEWTOP VIEW
16
5
8
9
12
13
4
EXPOSED
PAD
PIN 1 INDICATOR
4.10
4.00 SQ
3.90
0.45
0.40
0.35
SEATING
PLANE
0.80
0.75
0.70
0.05 MAX
0.02 NOM
0.20 REF
0.20 MIN
COPLANARITY
0.08
PIN 1
INDICATOR
0.35
0.30
0.25
FOR PROPER CONNECTION OF THE EXPOSED PAD, REFER TO THE PIN CONFIGURATION AND FUNCTION DESCRIPTIONS SECTION OF THIS DATA SHEET.
08-16-2010-C

OUTLINE DIMENSIONS

Figure 38. 16-Lead Thin Shrink Small Outline Package [TSSOP]
(RU-16)
Dimensions shown in millimeters
Figure 39. 16-Lead Lead Frame Chip Scale Package [LFCSP_WQ]
(CP-16-17)
Dimensions shown in millimeters

ORDERING GUIDE

Model1 Temperature Range Package Description Package Option
ADG5208BRUZ −40°C to +125°C 16-Lead Thin Shrink Small Outline Package [TSSOP] RU-16 ADG5208BRUZ-RL7 −40°C to +125°C 16-Lead Thin Shrink Small Outline Package [TSSOP] RU-16 ADG5208BCPZ-RL7 −40°C to +125°C 16-Lead Lead Frame Chip Scale Package [LFCSP_WQ] CP-16-17 ADG5209BCPZ-RL7 −40°C to +125°C 16-Lead Lead Frame Chip Scale Package [LFCSP_WQ] CP-16-17 ADG5209BRUZ −40°C to +125°C 16-Lead Thin Shrink Small Outline Package [TSSOP] RU-16 ADG5209BRUZ-RL7 −40°C to +125°C 16-Lead Thin Shrink Small Outline Package [TSSOP] RU-16
1
Z = RoHS Compliant Part.
Rev. A | Page 22 of 24
Page 23
Data Sheet ADG5208/ADG5209
NOTES
Rev. A | Page 23 of 24
Page 24
ADG5208/ADG5209 Data Sheet
©2011–2012 Analog Devices, Inc. All rights reserved. Trademarks and
NOTES
registered trademarks are the property of their respective owners. D09917-0-3/12(A)
Rev. A | Page 24 of 24
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