5.5 pF off source capacitance
52 pF off drain capacitance
0.4 pC charge injection
Low on resistance: 160 Ω typical
±9 V to ±22 V dual-supply operation
9 V to 40 V single-supply operation
48 V supply maximum ratings
Fully specified at ±15 V, ±20 V, +12 V, and +36 V
V
to VDD analog signal range
SS
Human body model (HBM) ESD rating
4 kV I/O port to supplies
1 kV I/O port to I/O port
4 kV all other pins
APPLICATIONS
Automatic test equipment
Data acquisition
Instrumentation
Avionics
Audio and video switching
Communication systems
High Voltage, Latch-Up Proof,
FUNCTIONAL BLOCK DIAGRAMS
Figure 1.
GENERAL DESCRIPTION
The ADG5208/ADG5209 are monolithic CMOS analog multiplexers comprising eight single channels and four differential
channels, respectively. The ADG5208 switches one of eight
inputs to a common output, as determined by the 3-bit binary
address lines, A0, A1, and A2. The ADG5209 switches one of
four differential inputs to a common differential output, as
determined by the 2-bit binary address lines, A0 and A1.
An EN input on both devices enables or disables the device.
When EN is disabled, all channels switch off. The ultralow
capacitance and charge injection of these switches make them
ideal solutions for data acquisition and sample-and-hold applications, where low glitch and fast settling are required. Fast
switching speed coupled with high signal bandwidth make
these devices suitable for video signal switching.
Each switch conducts equally well in both directions when on,
and each switch has an input signal range that extends to the
power supplies. In the off condition, signal levels up to the
supplies are blocked.
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
The ADG5208/ADG5209 do not have V
pins; instead, the logic
L
power supply is generated internally by an on-chip voltage
generator.
PRODUCT HIGHLIGHTS
1. Tre nch Isolation Guards Against Latch-Up.
A dielectric trench separates the P and N channel transistors
to prevent latch-up even under severe overvoltage conditions.
2. 0.4 pC Charge Injection.
3. Dual-Supply Operation.
For applications where the analog signal is bipolar, the
ADG5208/ADG5209 can be operated from dual supplies
of up to ±22 V.
4. Single-Supply Operation.
For applications where the analog signal is unipolar, the
ADG5208/ADG5209 can be operated from a single rail
power supply of up to 40 V.
5. 3 V Logic-Compatible Digital Inputs.
V
= 2.0 V, V
INH
6. No V
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
Logic Power Supply Required.
L
= 0.8 V.
INL
www.analog.com
Page 2
ADG5208/ADG5209 Data Sheet
TABLE OF CONTENTS
Features .............................................................................................. 1
VDD = +15 V ± 10%, VSS = −15 V ± 10%, GND = 0 V, unless otherwise noted.
Table 1.
Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range VDD to VSS V
On Resistance, RON 160 Ω typ VS = ±10 V, IS = −1 mA; see Figure 28
On-Resistance Match Between
Channels, ∆R
ON
3.5 Ω typ V
= ±10 V, IS = −1 mA
S
8 9 10 Ω max
On-Resistance Flatness, R
40 Ω typ VS = ±10 V, IS = −1 mA
FL AT (O N)
50 65 70 Ω max
LEAKAGE CURRENTS VDD = +16.5 V, VSS = −16.5 V
Source Off Leakage, IS (Off ) ±0.005 nA typ VS = ±10 V, VD = 10 V; see Figure 30
Drain Off Leakage, ID (Off ) ±0.005 nA typ VS = ±10 V, VD = 10 V; see Figure 30
±0.1 ±0.4 ±1.4 nA max
Channel On Leakage, ID (On), IS (On) ±0.01 nA typ VS = VD = ±10 V; see Figure 27
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
Input Current, I
INL
2.0 V min
INH
0.8 V max
INL
or I
0.002 µA typ VIN = V
INH
GND
or VDD
±0.1 µA max
Digital Input Capacitance, CIN 3 pF typ
DYNAMIC CHARACTERISTICS1
Transition Time, t
170 ns typ RL = 300 Ω, CL = 35 pF
TRANSITION
185 220 245 ns max VS = 10 V; see Figure 35
t
(EN) 120 ns typ RL = 300 Ω, CL = 35 pF
OFF
145 165 180 ns max VS = 10 V; see Figure 35
Break-Before-Make Time Delay, tD 65 ns typ RL = 300 Ω, CL = 35 pF
30 ns min VS1 = VS2 = 10 V; see Figure 34
Charge Injection, Q
0.4 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF;
INJ
see Figure 36
Off Isolation −90 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see
Figure 31
Channel-to-Channel Crosstalk −90 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see
Figure 29
−3 dB Bandwidth RL = 50 Ω, CL = 5 pF; see Figure 32
ADG520854 MHz typ
ADG5209133 MHz typ
Insertion Loss −6.4 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see
Figure 32
CS (Off ) 5.5 pF typ VS = 0 V, f = 1 MHz
CD (Off )
ADG520852 pF typ VS = 0 V, f = 1 MHz
ADG520926 pF typ VS = 0 V, f = 1 MHz
Rev. A | Page 3 of 24
Page 4
ADG5208/ADG5209 Data Sheet
DIGITAL INPUTS
30
ns min
VS1 = VS2 = 10 V; see Figure 34
Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments
CD (On), CS (On)
ADG520858 pF typ VS = 0 V, f = 1 MHz
ADG520931 pF typ VS = 0 V, f = 1 MHz
POWER REQUIREMENTS VDD = +16.5 V, VSS = −16.5 V
IDD 45 µA typ Digital inputs = 0 V or VDD
55 70 µA max
ISS 0.001 µA typ Digital inputs = 0 V or VDD
1 µA max
VDD/VSS ±9/±22 V min/V max GND = 0 V
1
Guaranteed by design; not subject to production test.
±20 V DUAL SUPPLY
VDD = +20 V ± 10%, VSS = −20 V ± 10%, GND = 0 V, unless otherwise noted.
Table 2.
Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range VDD to VSS V
On Resistance, RON 140 Ω typ VS = ±15 V, IS = −1 mA; see Figure 28
160 200 230 Ω max VDD = +18 V, VSS = −18 V
On-Resistance Match Between
Channels, ∆R
ON
8 9 10 Ω max
On-Resistance Flatness, R
FL AT (O N)
45 55 60 Ω max
LEAKAGE CURRENTS VDD = +22 V, VSS = −22 V
Source Off Leakage, IS (Off ) ±0.005 nA typ VS = ±15 V, VD = 15 V; see Figure 30
±0.1 ±0.2 ±0.4 nA max
Drain Off Leakage, ID (Off ) ±0.005 nA typ VS = ±15 V, VD = 15 V; see Figure 30
±0.1 ±0.4 ±1.4 nA max
Channel On Leakage, ID (On), IS (On) ±0.01 nA typ VS = VD = ±15 V; see Figure 27
±0.2 ±0.5 ±1.4 nA max
3.5 Ω typ V
= ±15 V, IS = −1 mA
S
34 Ω typ VS = ±15 V, IS = −1 mA
Input High Voltage, V
Input Low Voltage, V
Input Current, I
INL
±0.1 µA max
Digital Input Capacitance, CIN 3 pF typ
DYNAMIC CHARACTERISTICS1
Transition Time, t
195 225 255 ns max VS = 10 V; see Figure 33
tON (EN) 145 ns typ RL = 300 Ω, CL = 35 pF
170 200 225 ns max VS = 10 V; see Figure 35
t
(EN) 120 ns typ RL = 300 Ω, CL = 35 pF
OFF
140 155 170 ns max VS = 10 V; see Figure 35
Break-Before-Make Time Delay, tD 55 ns typ RL = 300 Ω, CL = 35 pF
Charge Injection, Q
Off Isolation −90 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see
Channel-to-Channel Crosstalk −90 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz;
2.0 V min
INH
0.8 V max
INL
or I
0.002 µA typ VIN = V
INH
160 ns typ RL = 300 Ω, CL = 35 pF
TRANSITION
0.3 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF; see
INJ
GND
or VDD
Figure 36
Figure 31
see Figure 29
Rev. A | Page 4 of 24
Page 5
Data Sheet ADG5208/ADG5209
ADG5208
57
pF typ
VS = 0 V, f = 1 MHz
Parameter
25°C
−40°C to +85°C
−40°C to +125°C
Unit
Test Conditions/Comments
LEAKAGE CURRENTS
VDD = 13.2 V, VSS = 0 V
Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments
−3 dB Bandwidth RL = 50 Ω, CL = 5 pF; see Figure 32
ADG520860 MHz typ
ADG5209130 MHz typ
Insertion Loss −5.6 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz;
see Figure 32
CS (Off ) 5.5 pF typ VS = 0 V, f = 1 MHz
CD (Off )
ADG520851 pF typ VS = 0 V, f = 1 MHz
ADG520926 pF typ VS = 0 V, f = 1 MHz
CD (On), CS (On)
ADG520931 pF typ VS = 0 V, f = 1 MHz
POWER REQUIREMENTS VDD = +22 V, VSS = −22 V
IDD 50 µA typ Digital inputs = 0 V or VDD
70 110 µA max
ISS 0.001 µA typ Digital inputs = 0 V or VDD
1 µA max
VDD/VSS ±9/±22 V min/V max GND = 0 V
1
Guaranteed by design; not subject to production test.
Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to VDD V
On Resistance, RON 150 Ω typ VS = 0 V to 30 V, IS = −1 mA; see
Figure 28
170 215 245 Ω max VDD = 32.4 V, VSS = 0 V
Channels, ∆RON
8 9 10 Ω max
On-Resistance Flatness, R
55 65 70 Ω max
LEAKAGE CURRENTS VDD = 39.6 V, VSS = 0 V
Source Off Leakage, IS (Off ) ±0.005 nA typ VS = 1 V/30 V, VD = 30 V/1 V; see
35 Ω typ VS = 0 V to 30 V, IS = −1 mA
FL AT (O N)
Figure 30
Rev. A | Page 6 of 24
Page 7
Data Sheet ADG5208/ADG5209
Input Low Voltage, V
0.8
V max
CD (Off )
Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments
Drain Off Leakage, ID (Off ) ±0.005 nA typ VS = 1 V/30 V, VD = 30 V/1 V; see
Figure 30
±0.1 ±0.4 ±1.4 nA max
Channel On Leakage, ID (On), IS (On) ±0.01 nA typ VS = VD = 1 V/30 V; see Figure 27
±0.2 ±0.5 ±1.4 nA max
DIGITAL INPUTS
Input High Voltage, V
Input Current, I
INL
±0.1 µA max
Digital Input Capacitance, CIN 3 pF typ
DYNAMIC CHARACTERISTICS1
Transition Time, t
230 245 259 ns max VS = 18 V; see Figure 33
tON (EN) 170 ns typ RL = 300 Ω, CL = 35 pF
210 230 255 ns max VS = 18 V; see Figure 35
t
(EN) 125 ns typ RL = 300 Ω, CL = 35 pF
OFF
180 180 180 ns max VS = 18 V; see Figure 35
Break-Before-Make Time Delay, tD 70 ns typ RL = 300 Ω, CL = 35 pF
35 ns min VS1 = VS2 = 18 V; see Figure 34
Charge Injection, Q
Off Isolation −90 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz;
Channel-to-Channel Crosstalk −90 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz;
−3 dB Bandwidth RL = 50 Ω, CL = 5 pF; see Figure 32
ADG520865 MHz typ
ADG5209130 MHz typ
Insertion Loss −6 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz;
CS (Off ) 5.5 pF typ VS = 18 V, f = 1 MHz
2.0 V min
INH
INL
or I
0.002 µA typ VIN = V
INH
185 ns typ RL = 300 Ω, CL = 35 pF
TRANSITION
0.4 pC typ VS = 18 V, RS = 0 Ω, CL = 1 nF;
INJ
GND
or VDD
see Figure 36
see Figure 31
see Figure 29
see Figure 32
ADG520851 pF typ VS = 18 V, f = 1 MHz
ADG520925 pF typ VS = 18 V, f = 1 MHz
CD (On), CS (On)
ADG520857 pF typ VS = 18 V, f = 1 MHz
ADG520932 pF typ VS = 18 V, f = 1 MH z
POWER REQUIREMENTS VDD = 39.6 V
IDD 80 µA typ Digital inputs = 0 V or VDD
100 130 µA max
VDD 9/40 V min/V max GND = 0 V, VSS = 0 V
1
Guaranteed by design; not subject to production test.
Rev. A | Page 7 of 24
Page 8
ADG5208/ADG5209 Data Sheet
VDD = +15 V, VSS = −15 V
CONTINUOUS CURRENT PER CHANNEL, Sx, D, OR Dx
Table 5. ADG5208
Parameter 25°C 85°C 125°C Unit
CONTINUOUS CURRENT, Sx OR D
VDD = +15 V, VSS = −15 V
TSSOP (θJA = 112.6°C/W) 40 24 14.5 mA maximum
LFCSP (θJA = 30.4°C/W) 69 37 18 mA maximum
VDD = +20 V, VSS = −20 V
TSSOP (θJA = 112.6°C/W) 42 26.5 14.5 mA maximum
LFCSP (θJA = 30.4°C/W) 75 40 18 mA maximum
VDD = 12 V, VSS = 0 V
TSSOP (θJA = 112.6°C/W) 28 19 12 mA maximum
LFCSP (θJA = 30.4°C/W) 40 25 14.5 mA maximum
VDD = 36 V, VSS = 0 V
TSSOP (θJA = 112.6°C/W) 40 26 14.5 mA maximum
LFCSP (θJA = 30.4°C/W) 72 39 18 mA maximum
Table 6. ADG5209
Parameter 25°C 85°C 125°C Unit
CONTINUOUS CURRENT, Sx OR Dx
TSSOP (θJA = 112.6°C/W) 29 19 12 mA maximum
LFCSP (θJA = 30.4°C/W) 51 30 16 mA maximum
VDD = +20 V, VSS = −20 V
TSSOP (θJA = 112.6°C/W) 30 20 12.5 mA maximum
LFCSP (θJA = 30.4°C/W) 55 32 17 mA maximum
VDD = 12 V, VSS = 0 V
TSSOP (θJA = 112.6°C/W) 20 14 10 mA maximum
LFCSP (θJA = 30.4°C/W) 29 20 12.5 mA maximum
VDD = 36 V, VSS = 0 V
TSSOP (θJA = 112.6°C/W) 30 20 12.5 mA maximum
LFCSP (θJA = 30.4°C/W) 54 31 17 mA maximum
Rev. A | Page 8 of 24
Page 9
Data Sheet ADG5208/ADG5209
Junction Temperature
150°C
Reflow Soldering Peak
260(+0/−5)°C
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 7.
Parameter Rating
VDD to VSS 48 V
VDD to GND −0.3 V to +48 V
VSS to GND +0.3 V to −48 V
Analog Inputs1 VSS − 0.3 V to VDD + 0.3 V or
30 mA, whichever occurs first
Digital Inputs1 VSS − 0.3 V to VDD + 0.3 V or
30 mA, whichever occurs first
Peak Current, Sx, D, or Dx Pins
ADG5208126 mA (pulsed at 1 ms, 10%
duty cycle maximum)
ADG520992 mA (pulsed at 1 ms, 10%
duty cycle maximum)
Continuous Current, Sx, D, or
Temperature Range
2
Dx Pins
Operating −40°C to +125°C
Storage −65°C to +150°C
Data + 15%
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Only one absolute maximum rating can be applied at any
one time.
ESD CAUTION
Thermal Impedance, θJA
16-Lead TSSOP (4-Layer
Board)
16-Lead LFCSP (4-Layer
Board)
Temperature, Pb Free
HBM ESD
I/O Port to Supplies 4 kV
I/O Port to I/O Port 1 kV
All Other Pins 4 kV
1
Overvoltages at the Ax, EN, Sx, D, and Dx pins are clamped by internal
diodes. Limit current to the maximum ratings given.
2
See Table 5 and Table 6.
112.6°C/W
30.4°C/W
Rev. A | Page 9 of 24
Page 10
ADG5208/ADG5209 Data Sheet
A0
1
EN
2
V
SS
3
S1
4
A1
16
A2
15
GND
14
V
DD
13
S2
5
S5
12
S3
6
S6
11
S4
7
S7
10
D
8
S8
9
ADG5208
TOP VIEW
(Not to Scale)
09917-002
12
11
10
1
3
4
GND
V
DD
S5
9
S6
V
SS
S2
2
S1
S3
6
D
5S4
7S8
8
S7
16
EN
15
A0
14
A1
13
A2
TOP VIEW
(Not to S cale)
ADG5208
NOTES
1. THE EXPOSED PAD IS CONNECTE D INTERNALLY . FOR
INCREASED REL IABILIT Y OF THE SO LDER JOINT S AND
MAXIMUM THERMAL CAPABILITY, IT IS RECOMMENDED
THAT THE P AD BE S OLDERED TO THE SUBSTRATE , V
SS
.
09917-003
2
16
EN
Active High Digital Input. When low, the device is disabled and all switches are off. When high, the
11 9 S6
Source Terminal 6. This pin can be an input or an output.
PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS
Figure 2. ADG5208 Pin Configuration (TSSOP)
Figure 3. ADG5208 Pin Configuration (LFCSP)
Table 8. ADG5208 Pin Function Descriptions
Pin No.
TSSOP LFCSP Mnemonic Description
1 15 A0 Logic Control Input.
Ax logic inputs determine the on switches.
3 1 VSS Most Negative Power Supply Potential. In single-supply applications, this pin can be connected
to ground.
4 2 S1 Source Terminal 1. This pin can be an input or an output.
5 3 S2 Source Terminal 2. This pin can be an input or an output.
6 4 S3 Source Terminal 3. This pin can be an input or an output.
7 5 S4 Source Terminal 4. This pin can be an input or an output.
8 6 D Drain Terminal. This pin can be an input or an output.
9 7 S8 Source Terminal 8. This pin can be an input or an output.
10 8 S7 Source Terminal 7. This pin can be an input or an output.
12 10 S5 Source Terminal 5. This pin can be an input or an output.
13 11 VDD Most Positive Power Supply Potential.
14 12 GND Ground (0 V) Reference.
15 13 A2 Logic Control Input.
16 14 A1 Logic Control Input.
EP Exposed Pad The exposed pad is connected internally. For increased reliability of the solder joints and
maximum thermal capability, it is recommended that the pad be soldered to the substrate, V
1. THE EXPOSED PAD IS CONNECTE D INTERNALLY . FOR
INCREASED REL IABILIT Y OF THE SOLDER JOINTS AND
MAXIMUM THERMAL CAPABILITY, IT IS RECOMMENDED
THAT THE P AD BE S OLDERED TO THE SUBSTRAT E , V
SS
.
09917-005
10 8 S4B
Source Terminal 4B. This pin can be an input or an output.
15
13
GND
Ground (0 V) Reference.
Figure 4. ADG5209 Pin Configuration (TSSOP)
Figure 5. ADG5209 Pin Configuration (LFCSP)
Table 10. ADG5209 Pin Function Descriptions
Pin No.
TSSOP LFCSP Mnemonic Description
1 15 A0 Logic Control Input.
2 16 EN Active High Digital Input. When low, the device is disabled and all switches are off. When high,
Ax logic inputs determine the on switches.
3 1 VSS Most Negative Power Supply Potential. In single-supply applications, this pin can be connected
to ground.
4 2 S1A Source Terminal 1A. This pin can be an input or an output.
5 3 S2A Source Terminal 2A. This pin can be an input or an output.
6 4 S3A Source Terminal 3A. This pin can be an input or an output.
7 5 S4A Source Terminal 4A. This pin can be an input or an output.
8 6 DA Drain Terminal A. This pin can be an input or an output.
9 7 DB Drain Terminal B. This pin can be an input or an output.
11 9 S3B Source Terminal 3B. This pin can be an input or an output.
12 10 S2B Source Terminal 2B. This pin can be an input or an output.
13 11 S1B Source Terminal 1B. This pin can be an input or an output.
14 12 VDD Most Positive Power Supply Potential.
16 14 A1 Logic Control Input.
EP Exposed Pad The exposed pad is connected internally. For increased reliability of the solder joints and maximum
thermal capability, it is recommended that the pad be soldered to the substrate, V
.
SS
Table 11. ADG5209 Truth Table
A1 A0 EN On Switch Pair
X1 X1 0 None
0 0 1 1
0 1 1 2
1 0 1 3
1 1 1 4
1
X is don’t care.
Rev. A | Page 11 of 24
Page 12
ADG5208/ADG5209 Data Sheet
160
0
20
40
60
80
100
120
140
–25 –20 –15 –10 –50510152025
ON RESISTANCE (Ω)
VS, V
D
(V)
TA = 25°C
VDD = +18V
V
SS
= –18V
V
DD
= +20V
V
SS
= –20V
V
DD
= +22V
V
SS
= –22V
09917-006
250
200
150
100
50
0
–20–15–10–505101520
ON RESISTANCE (Ω)
V
S
, VD (V)
T
A
= 25°C
VDD = +9V
V
SS
= –9V
V
DD
= +13.2V
V
SS
= –13.2V
V
DD
= +15V
V
SS
= –15V
VDD = +16.5V
V
SS
= –16.5V
09917-007
500
450
400
350
300
250
200
150
100
50
0
01412108642
ON RESISTANCE (Ω)
VS, VD (V)
TA = 25°C
VDD = 9V
V
SS
= 0V
V
DD
= 10.8V
V
SS
= 0V
VDD = 12V
V
SS
= 0V
VDD = 13.2V
V
SS
= 0V
09917-008
160
140
120
100
80
60
40
20
0
0403530252015105
ON RESISTANCE (Ω)
VS, VD (V)
TA = 25°C
VDD = 32.4V
V
SS
= 0V
VDD = 36V
V
SS
= 0V
V
DD
= 39.6V
V
SS
= 0V
09917-009
250
200
150
100
50
0
–15–10–5051015
ON RESISTANCE (Ω)
VS,VD (V)
VDD = +15V
V
SS
= –15V
TA = +125°C
T
A
= +85°C
T
A
= +25°C
T
A
= –40°C
09917-010
200
160
120
80
40
180
140
100
60
20
0
–20–15–10–505102015
ON RESISTANCE (Ω)
VS,VD (V)
VDD = +20V
V
SS
= –20V
T
A
= +125°C
TA = +85°C
T
A
= +25°C
T
A
= –40°C
09917-011
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 6. RON as a Function of VS, VD (±20 V Dual Supply)
Figure 7. RON as a Function of VS, VD (±15 V Dual Supply)
Figure 9. RON as a Function of VS, VD (36 V Single Supply)
Figure 10. RON as a Function of VS, VD for Different Temperatures,
±15 V Dual Supply
Figure 8. RON as a Function of VS, VD (12 V Single Supply)
Figure 11. RON as a Function of VS, VD for Different Temperatures,
±20 V Dual Supply
Rev. A | Page 12 of 24
Page 13
Data Sheet ADG5208/ADG5209
500
400
300
200
100
450
350
250
150
50
0
024681012
ON RESISTANCE (Ω)
VS,VD (V)
VDD = 12V
V
SS
= 0V
T
A
= +125°C
T
A
= +85°C
T
A
= +25°C
T
A
= –40°C
09917-012
250
200
100
150
50
0
03530252015105
ON RESISTANCE (Ω)
VS,VD (V)
VDD = 36V
V
SS
= 0V
T
A
= +125°C
T
A
= +85°C
T
A
= +25°C
T
A
= –40°C
09917-013
50
–250
–200
–150
–100
–50
0
01251007550
25
LEAKAGE CURRENT (pA)
TEMPERATURE (°C)
VDD = +15V
V
SS
= –15V
V
BIAS
= +10V/–10V
IS (OFF) + –
I
S
(OFF) – +
ID, I
S
(ON) + +
ID (OFF) + –
ID (OFF) – +
ID, I
S
(ON) – –
09917-014
100
–200
–150
–100
–50
0
50
01251007550
25
LEAKAGE CURRENT (pA)
TEMPERATURE (°C)
V
DD
= +20V
V
SS
= –20V
V
BIAS
= +15V/–15V
I
S
(OFF) + –
I
S
(OFF) – +
I
D
, I
S
(ON) + +
I
D
(OFF) + –
I
D
(OFF) – +
I
D
, I
S
(ON) – –
09917-015
100
–700
–600
–500
–400
–300
–200
–100
0
0125100755025
LEAKAGE CURRENT (pA)
TEMPERATURE (°C)
VDD = 12V
V
SS
= 0V
V
BIAS
= 1V/10V
IS (OFF) + –
IS (OFF) – +
ID, IS (ON) + +
ID (OFF) + –
I
D
(OFF) – +
I
D
, IS (ON) – –
09917-016
200
–1000
–800
–600
–400
–200
0
012510075
5025
LEAKAGE CURRENT (pA)
TEMPERATURE (°C)
VDD = 36V
V
SS
= 0V
V
BIAS
= 1V/30V
IS (OFF) + –
I
S
(OFF) – +
ID, I
S
(ON) + +
ID (OFF) + –
I
D
(OFF) – +
ID, IS (ON) – –
09917-017
Figure 12. RON as a Function of VS, VD for Different Temperatures,
12 V Single Supply
Figure 13. RON as a Function of VS, VD for Different Temperatures,
36 V Single Supply
Figure 15. Leakage Currents vs. Temperature, ±20 V Dual Supply
Figure 16. Leakage Currents vs. Temperature, 12 V Single Supply
Figure 14. Leakage Currents vs. Temperature, ±15 V Dual Supply
Figure 17. Leakage Currents vs. Temperature, 36 V Single Supply
Rev. A | Page 13 of 24
Page 14
ADG5208/ADG5209 Data Sheet
0
–140
–120
–100
–80
–60
–40
–20
10k100k1G100M10M1M
OFF ISOLATION (dB)
FREQUENCY ( Hz )
TA = 25°C
V
DD
= +15V
V
SS
= –15V
09917-018
0
–140
–120
–100
–80
–60
–40
–20
10k100k1G100M10M1M
CROSSTAL K ( dB)
FREQUENCY ( Hz )
T
A
= 25°C
V
DD
= +15V
V
SS
= –15V
BETWEEN S 1 AND S 2
BETWEEN S 1 AND S 8
09917-019
16
0
2
4
6
8
10
12
14
–20–10010203040
CHARGE INJECT ION (pC)
VS (V)
TA = 25°C
DEMUX (DRAIN T O SOURCE)
VDD = +20V
V
SS
= –20V
V
DD
= +15V
V
SS
= –15V
V
DD
= +36V
V
SS
= 0V
V
DD
= +12V
V
SS
= 0V
09917-020
0
–120
–100
–80
–60
–40
–20
1k10k100k10M1M
ACPSRR (dB)
FREQUENCY ( Hz )
T
A
= 25°C
V
DD
= +15V
V
SS
= –15V
NO DECOUPL ING
CAPACITORS
DECOUPLING
CAPACITORS
09917-021
–6
–12
–11
–10
–9
–8
–7
100k1M10M1G100M
ATTENUATION (dB)
FREQUENCY ( Hz )
T
A
= 25°C
V
DD
= +15V
V
SS
= –15V
ADG5208ADG5209
09917-023
6
–2
–1
0
1
2
3
4
5
–20–10010203040
CHARGE INJECT ION (pC)
VS (V)
TA = 25°C
MUX (SOURCE TO DRAIN)
VDD = +20V
V
SS
= –20V
V
DD
= +15V
V
SS
= –15V
V
DD
= +36V
V
SS
= 0V
V
DD
= +12V
V
SS
= 0V
09917-039
Figure 18. Off Isolation vs. Frequency, ±15 V Dual Supply
Figure 19. Crosstalk vs. Frequency, ±15 V Dual Supply
Figure 21. ACPSRR vs. Frequency, ±15 V Dual Supply
Figure 22. Bandwidth
Figure 20. Charge Injection vs. Source Voltage, Drain to Source
Figure 23. Charge Injection vs. Source Voltage, Source to Drain
Rev. A | Page 14 of 24
Page 15
Data Sheet ADG5208/ADG5209
350
0
50
100
150
200
250
300
–40–20020406080100120
TIME (ns)
TEMPERATURE (°C)
VDD = +12V
V
SS
= 0V
V
DD
= +15V
V
SS
= –15V
V
DD
= +20V
V
SS
= –20V
V
DD
= +36V
V
SS
= 0V
09917-024
40
35
30
25
20
15
10
5
0
–15–10151050–5
CAPACITANCE (pF)
VS (V)
TA = 25°C
V
DD
= +15V
V
SS
= –15V
SOURCE/DRAI N ON
DRAIN OFF
SOURCE OF F
09917-025
80
70
60
50
40
30
20
10
0
–15–10151050–5
CAPACITANCE (pF)
VS (V)
TA = 25°C
V
DD
= +15V
V
SS
= –15V
SOURCE/DRAI N ON
DRAIN OFF
SOURCE OF F
09917-040
Figure 24. t
Times vs. Temperature
TRANSITION
Figure 25. ADG5209 Capacitance vs. Source Voltage, ±15 V Dual Supply
Figure 26. ADG5208 Capacitance vs. Source Voltage, ±15 V Dual Supply
Rev. A | Page 15 of 24
Page 16
ADG5208/ADG5209 Data Sheet
SxD
A
V
D
I
D
(ON)
NC
NC = NO CONNECT
09917-027
SxD
V
S
V1
I
DS
RON = V1/I
DS
09917-028
CHANNEL-TO - CHANNE L CROSSTAL K = 20 log
V
OUT
GND
S1
D
S2
V
OUT
NETWORK
ANALYZER
R
L
50Ω
R
L
50Ω
V
S
V
S
V
DD
V
SS
0.1µF
V
DD
0.1µF
V
SS
09917-029
V
S
V
D
SxD
A
A
I
S
(OFF)I
D
(OFF)
09917-031
V
OUT
50Ω
NETWORK
ANALYZER
R
L
50Ω
Sx
D
V
S
V
DD
V
SS
0.1µF
V
DD
0.1µF
V
SS
GND
50Ω
OFF ISOLATION = 20 log
V
OUT
V
S
09917-030
V
OUT
50Ω
NETWORK
ANALYZER
R
L
50Ω
Sx
D
INSERTION LOSS = 20 log
V
OUT
WITH SWITCH
V
OUT
WITHOUT SWITCH
V
S
V
DD
V
SS
0.1µF
V
DD
0.1µF
V
SS
GND
09917-033
TEST CIRCUITS
Figure 27. On Leakage
Figure 28. On Resistance
Figure 30. Off Leakage
Figure 31. Off Isolation
Figure 29. Channel-to-Channel Crosstalk
Figure 32. Bandwidth
Rev. A | Page 16 of 24
Page 17
Data Sheet ADG5208/ADG5209
3V
0V
OUTPUT
t
r
< 20ns
t
f
< 20ns
ADDRESS
DRIVE (V
IN
)
t
TRANSITION
t
TRANSITION
50%50%
90%
90%
OUTPUT
ADG5208*
A0
A1
A2
50Ω
300Ω
GND
S1
S2 TO S7
S8
D
35pF
V
IN
2.0VEN
V
DD
V
SS
V
DD
V
SS
V
S1
V
S8
*
SIMIL AR CONNECTION FOR ADG5209.
09917-034
OUTPUT
ADG5208*
A0
A1
A2
50Ω
300Ω
GND
S1
S2 TO S7
S8
D
35pF
V
IN
2.0V
EN
V
DD
V
SS
V
DDVSS
V
S
*
SIMIL AR CONNECTION FOR ADG5209.
3V
0V
OUTPUT
80%80%
ADDRESS
DRIVE (V
IN
)
t
D
09917-035
OUTPUT
ADG5208*
A0
A1
A2
50Ω
300Ω
GND
S1
S2 TO S8
D
35pF
V
IN
EN
V
DD
V
SS
V
DDVSS
V
S
*SIMIL AR CONNECTION FOR ADG5209.
3V
0V
OUTPUT
50%50%
t
OFF
(EN)
t
ON
(EN)
0.9V
OUT
0.1V
OUT
ENABLE
DRIVE (VIN)
09917-036
Figure 33. Address to Output Switching Times, t
TRANSITION
Figure 34. Break-Before-Make Time Delay, t
D
(EN), t
(EN)
OFF
Figure 35. Enable Delay, t
Rev. A | Page 17 of 24
ON
Page 18
ADG5208/ADG5209 Data Sheet
3V
V
IN
V
OUT
Q
INJ
= C
L
× ΔV
OUT
ΔV
OUT
DS
EN
GND
C
L
1nF
V
OUT
V
IN
R
S
V
S
V
DD
V
SS
V
DDVSS
A0
A1
A2
ADG5208*
*SIMIL AR CONNECTION FOR ADG5209.
09917-037
Figure 36. Charge Injection
Rev. A | Page 18 of 24
Page 19
Data Sheet ADG5208/ADG5209
TERMINOLOGY
IDD
I
represents the positive supply current.
DD
I
SS
I
represents the negative supply current.
SS
V
, VS
D
V
and VS represent the analog voltage on Terminal D and
D
Terminal S, respec tively.
R
ON
R
is the ohmic resistance between Terminal D and
ON
Terminal S.
∆R
ON
∆R
represents the difference between the RON of any two
ON
channels.
R
FL AT (ON)
Flatness that is defined as the difference between the maximum
and minimum value of on resistance measured over the
specified analog signal range is represented by R
(Off)
I
S
I
(Off) is the source leakage current with the switch off.
S
I
(Off)
D
I
(Off) is the drain leakage current with the switch off.
D
(On), IS (On)
I
D
I
(On) and IS (On) represent the channel leakage currents with
D
FLAT (ON)
.
the switch on.
V
INL
V
is the maximum input voltage for Logic 0.
INL
V
INH
V
is the minimum input voltage for Logic 1.
INH
I
, I
INL
INH
I
INL
and I
represent the low and high input currents of the
INH
digital inputs.
C
(Off)
D
C
(Off) represents the off switch drain capacitance, which is
D
measured with reference to ground.
C
(Off)
S
C
(Off) represents the off switch source capacitance, which is
S
measured with reference to ground.
C
(On), CS (On)
D
C
(On) and CS (On) represent on switch capacitances, which
D
are measured with reference to ground.
C
IN
C
represents digital input capacitance.
IN
t
(EN)
ON
t
(EN) represents the delay time between the 50% and 90%
ON
points of the digital input and switch on condition.
t
(EN)
OFF
t
(EN) represents the delay time between the 50% and 90%
OFF
points of the digital input and switch off condition.
t
TRANSIT ION
t
TRANSITION
represents the delay time between the 50% and 90%
points of the digital inputs and the switch on condition when
switching from one address state to another.
Break-Before-Make Time Delay (t
t
represents the off time measured between the 80% point of
D
)
D
both switches when switching from one address state to
an other.
Off Isolation
Off isolation is a measure of unwanted signal coupling through
an off channel.
Charge Injection
Charge injection is a measure of the glitch impulse transferred
from the digital input to the analog output during switching.
Crosstalk
Crosstalk is a measure of unwanted signal that is coupled
through from one channel to another as a result of parasitic
capacitance.
Bandwidth
Bandwidth is the frequency at which the output is attenuated
by 3 dB.
On Response
On response is the frequency response of the on switch.
AC Power Supply Rejection Ratio (ACPSRR)
ACPSRR is a measure of the ability of a device to avoid coupling
noise and spurious signals that appear on the supply voltage pin
to the output of the switch. The dc voltage on the device is
modulated by a sine wave of 0.62 V p-p. The ratio of the
amplitude of signal on the output to the amplitude of the
modulation is the ACPSRR.
Rev. A | Page 19 of 24
Page 20
ADG5208/ADG5209 Data Sheet
NMOS
PMOS
P WELLN WE LL
BURIED OXI DE LAYER
HANDLE WAFE R
TRENCH
09917-038
TRENCH ISOLATION
In the ADG5208/ADG5209, an insulating oxide layer (trench)
is placed between the NMOS and the PMOS transistors of each
CMOS switch. Parasitic junctions, which occur between the
transistors in junction isolated switches, are eliminated, and the
result is a completely latch-up proof switch.
In junction isolation, the N and P wells of the PMOS and
NMOS transistors form a diode that is reverse-biased under
normal operation. However, during overvoltage conditions, this
diode can become forward-biased. A silicon controlled rectifier
(SCR) type circuit is formed by the two transistors, causing a
significant amplification of the current that, in turn, leads to
latch-up. With trench isolation, this diode is removed, and the
result is a latch-up proof switch.
Figure 37. Trench Isolation
Rev. A | Page 20 of 24
Page 21
Data Sheet ADG5208/ADG5209
APPLICATIONS INFORMATION
The ADG52xx family of switches and multiplexers provides a
robust solution for instrumentation, industrial, automotive,
aerospace, and other harsh environments that are prone to
latch-up, which is an undesirable high current state that can
lead to device failure and persist until the power supply is
turned off. The ADG5208/ADG5209 high voltage switches
allow single-supply operation from 9 V to 40 V and dual-supply
operation from ±9 V to ±22 V.
Rev. A | Page 21 of 24
Page 22
ADG5208/ADG5209 Data Sheet
16
9
81
PIN 1
SEATING
PLANE
8°
0°
4.50
4.40
4.30
6.40
BSC
5.10
5.00
4.90
0.65
BSC
0.15
0.05
1.20
MAX
0.20
0.09
0.75
0.60
0.45
0.30
0.19
COPLANARITY
0.10
COMPLI ANT TO JEDEC STANDARDS MO-153-AB
2.70
2.60 SQ
2.50
COMPLIANT
TO
JEDEC STANDARDS MO-220-WGGC.
1
0.65
BSC
BOTTOMVIEWTOP VIEW
16
5
8
9
12
13
4
EXPOSED
PAD
PIN 1
INDICATOR
4.10
4.00 SQ
3.90
0.45
0.40
0.35
SEATING
PLANE
0.80
0.75
0.70
0.05 MAX
0.02 NOM
0.20 REF
0.20 MIN
COPLANARITY
0.08
PIN 1
INDICATOR
0.35
0.30
0.25
FOR PROPER CONNECTION OF
THE EXPOSED PAD, REFER TO
THE PIN CONFIGURATION AND
FUNCTION DESCRIPTIONS
SECTION OF THIS DATA SHEET.
08-16-2010-C
OUTLINE DIMENSIONS
Figure 38. 16-Lead Thin Shrink Small Outline Package [TSSOP]
(RU-16)
Dimensions shown in millimeters
Figure 39. 16-Lead Lead Frame Chip Scale Package [LFCSP_WQ]
(CP-16-17)
Dimensions shown in millimeters
ORDERING GUIDE
Model1 Temperature Range Package Description Package Option
ADG5208BRUZ −40°C to +125°C 16-Lead Thin Shrink Small Outline Package [TSSOP] RU-16
ADG5208BRUZ-RL7 −40°C to +125°C 16-Lead Thin Shrink Small Outline Package [TSSOP] RU-16
ADG5208BCPZ-RL7 −40°C to +125°C 16-Lead Lead Frame Chip Scale Package [LFCSP_WQ] CP-16-17
ADG5209BCPZ-RL7 −40°C to +125°C 16-Lead Lead Frame Chip Scale Package [LFCSP_WQ] CP-16-17
ADG5209BRUZ −40°C to +125°C 16-Lead Thin Shrink Small Outline Package [TSSOP] RU-16
ADG5209BRUZ-RL7 −40°C to +125°C 16-Lead Thin Shrink Small Outline Package [TSSOP] RU-16