Datasheet ADG436BR, ADG436BN Datasheet (Analog Devices)

a

Dual SPDT Switch

ADG436

FEATURES
44 V Supply Maximum Ratings
V

to VDD Analog Signal Range

SS

Low On Resistance (12 ⍀ Typ)
Low ⌬R
Low R
Low Power Dissipation
Fast Switching Times

t

t
Low Leakage Currents (5 nA Max)
Low Charge Injection (10 pC)
Break-Before-Make Switching Action

APPLICATIONS
Audio and Video Switching
Battery Powered Systems
Test Equipment
Communications Systems

GENERAL DESCRIPTION

(3 ⍀ Max)

ON

Match (2.5 ⍀ Max)

ON

< 175 ns

ON

< 145 ns

OFF

The ADG436 is a monolithic CMOS device comprising two
independently selectable SPDT switches. It is designed on an

2

MOS process which provides low power dissipation yet

LC
gives high switching speed and low on resistance.

The on resistance profile is very flat over the full analog input
range ensuring good linearity and low distortion when switching
audio signals. High switching speed also makes the part suitable
for video signal switching. CMOS construction ensures ultralow
power dissipation making the part ideally suited for portable and
battery powered instruments.

Each switch conducts equally well in both directions when ON
and has an input signal range which extends to the power sup­plies. In the OFF condition, signal levels up to the supplies are
blocked. All switches exhibit break-before-make switching ac­tion for use in multiplexer applications. Inherent in the design is
low charge injection for minimum transients when switching the
digital inputs.

FUNCTIONAL BLOCK DIAGRAM

S1A

D1

S1B

IN1

ADG436

PRODUCT HIGHLIGHTS

1. Extended Signal Range
The ADG436 is fabricated on an enhanced LC

S2A

D2

S2B

IN2

2

MOS pro­cess, giving an increased signal range which extends to the
supply rails.

2. Low Power Dissipation

3. Low R

ON

4. Single Supply Operation
For applications where the analog signal is unipolar, the
ADG436 can be operated from a single rail power supply.

REV. A

Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone] World Wide Web Site: http://www.analog.com
Fax: [phone] © Analog Devices, Inc., 1998

ADG436–SPECIFICATIONS

1

Dual Supply

(VDD = +15 V, VSS = –15 V, GND = 0 V, unless otherwise noted)

–40ⴗC to Test Conditions/

Parameter +25ⴗC +85ⴗC Units Comments

ANALOG SWITCH

Analog Signal Range V
R

ON

12 Ω typ VD = ±10 V, I

SS

to V

DD

V

25 Ω max

∆R

ON

1 Ω typ V

= –5 V, 5 V, IS = –10 mA

D

3 Ω max

Match 1 Ω typ VD = ±10 V, I

R

ON

2.5 Ω max

LEAKAGE CURRENTS V

Source OFF Leakage I

(OFF) ±0.005 nA typ VD = ±15.5 V, VS = ±15.5 V

S

= +16.5 V, VSS = –16.5 V

DD

±0.25 ±5 nA max Test Circuit 2

Channel ON Leakage I

(ON) ±0.05 nA typ V

D

S

S

= V

= ±15.5 V

D

, I

±0.4 ±5 nA max Test Circuit 3

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V

INL

INH

2.4 V min

0.8 V max

Input Current

I

INL

or I

INH

±0.005 µA typ V

= 0 V or V

IN

±0.5 µA max

OPEN

2

70 ns typ R

125 ns max V

60 ns typ R

120 ns max V

10 ns min R

= 300 Ω, C

L

= ±10 V; Test Circuit 4

S

= 300 Ω, C

L

= ±10 V; Test Circuit 4

S

= 300 Ω, C

L

= +5 V; Test Circuit 5

V

S

= 0 V, R

D

DYNAMIC CHARACTERISTICS

t

ON

t

OFF

Break-Before-Make Delay, t

Charge Injection 10 pC typ V

Test Circuit 6

OFF Isolation 72 dB typ R

Channel-to-Channel Crosstalk 90 dB typ R

(OFF) 10 pF typ

C

S

= 75 Ω, C

L

= 2.3 V rms, Test Circuit 7

V

S

= 75 Ω, C

L

= 2.3 V rms, Test Circuit 8

V

S

CD, CS (ON) 30 pF typ

POWER REQUIREMENTS

I

DD

0.05 mA typ Digital Inputs = 0 V or 5 V

0.35 mA max

I

SS

0.01 µA typ
15 µA max

VDD/V

SS

NOTES

1

Temperature range is as follows: B Version, –40°C to +85°C.

2

Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

±3/±20 V min/V max |V

| = |VSS|

DD

= –1 mA

S

= –10 mA

S

DD

= 35 pF;

L

= 35 pF;

L

= 35 pF;

L

= 0 Ω, C

D

= 5 pF, f = 1 MHz;

L

= 5 pF, f = 1 MHz;

L

= 10 nF;

L

REV. A–2–

ADG436

Single Supply

(VDD = +12 V, VSS = 0 V, GND = 0 V, unless otherwise noted)

–40ⴗC to Test Conditions/

Parameter +25ⴗC +85ⴗC Units Comments

ANALOG SWITCH

Analog Signal Range 0 to V
R

ON

20 Ω typ V

DD

V

= +1 V, +10 V, IS = –1 mA

D

40 Ω max

R

Match 2.5 Ω max

ON

LEAKAGE CURRENTS V

Source OFF Leakage I

(OFF) ±0.005 nA typ V

S

= +13.2 V

DD

= 12.2 V/1 V, VS = 1 V/12.2 V

D

±0.25 ±5 nA max Test Circuit 2

Channel ON Leakage I

(ON) ±0.05 nA typ V

D

S

= VD = 12.2 V/1 V

S

, I

±4 ±5 nA max Test Circuit 3

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V

INL

INH

2.4 V min

0.8 V max

Input Current

I

INL

or I

INH

±0.005 µA typ V

= 0 V or V

IN

±0.5 µA max

OPEN

2

100 ns typ R

200 ns max V

90 ns typ R

180 ns max V

10 ns typ R

= 300 Ω, C

L

= +8 V; Test Circuit 4

S

= 300 Ω, C

L

= +8 V; Test Circuit 4

S

= 300 Ω, C

L

= +5 V; Test Circuit 5

V

S

= 6 V, R

D

DYNAMIC CHARACTERISTICS

t

ON

t

OFF

Break-Before-Make Delay, t

Charge Injection 10 pC typ V

Test Circuit 6

OFF Isolation 72 dB typ R

Channel-to-Channel Crosstalk 90 dB typ R

(OFF) 10 pF typ

C

S

= 75 Ω, C

L

= 1.15 V rms; Test Circuit 7

V

S

= 75 Ω, C

L

= 1.15 V rms, Test Circuit 8

V

S

CD, CS (ON) 30 pF typ

POWER REQUIREMENTS V

I

DD

0.05 mA typ Digital Inputs = 0 V or 5 V

= +13.5 V

DD

0.35 mA max

V

DD

NOTES

1

Temperature range is as follows: B Version, – 40°C to +85°C.

2

Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

+3/+30 V min/V max

DD

= 35 pF;

L

= 35 pF;

L

= 35 pF;

L

= 0 Ω, C

D

= 5 pF, f = 1 MHz;

L

= 5 pF, f = 1 MHz;

L

= 10 nF;

L

REV. A

–3–

ADG436

WARNING!

ESD SENSITIVE DEVICE

ABSOLUTE MAXIMUM RATINGS

(T

= +25°C unless otherwise noted)

A

1

VDD to VSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +44 V

to GND . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +30 V

V

DD

to GND . . . . . . . . . . . . . . . . . . . . . . . . . . +0.3 V to –30 V

V

SS

Analog, Digital Inputs

2

. . . . . . . . . . . VSS – 2 V to VDD + 2 V

or 20 mA, whichever occurs first

Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . 20 mA

Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . 40 mA

(Pulsed at 1 ms, 10% Duty Cycle max)
Operating Temperature Range

Industrial (B Version) . . . . . . . . . . . . . . . –40°C to +85°C

Storage Temperature Range . . . . . . . . . . . . –65°C to +125°C

SOIC Package

, Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 77°C/W

θ

JA

Lead Temperature, Soldering

Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . +215°C

Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . +220°C

NOTES

1

Stresses above those listed under Absolute Maximum Ratings may cause perma-

nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. Only one absolute
maximum rating may be applied at any one time.

2

Overvoltages at IN, S or D will be clamped by internal diodes. Current should be

limited to the maximum ratings given.

Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . +150°C

Plastic DIP Package

, Thermal Impedance . . . . . . . . . . . . . . . . . . . 117°C/W

θ

JA

Lead Temperature, Soldering (10 sec) . . . . . . . . . . +260°C

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the ADG436 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.

Table I. Truth Table

Logic Switch A Switch B

0 OFF ON
1 ON OFF

ORDERING GUIDE

Temperature Package Package

Model Range Descriptions Options

ADG436BN – 40°C to +85°C Plastic DIP N-16
ADG436BR – 40°C to +85°C 0.15" SOIC R-16A

REV. A–4–

TERMINOLOGY

ADG436

V

DD

V

SS

Most positive power supply potential.
Most negative power supply potential in dual

supplies. In single supply applications, it may

be connected to ground.
GND Ground (0 V) reference.
S Source terminal. May be an input or output.
D Drain terminal. May be an input or output.
IN Logic control input.
R

∆R

ON

ON

Ohmic resistance between D and S.

RON variation due to a change in the analog

input voltage with a constant load current.
R

Match Difference between the RON of any two channels.

ON

I

(OFF) Source leakage current with the switch “OFF.”

S

I

, IS (ON) Channel leakage current with the switch “ON.”

D

V

(VS) Analog voltage on terminals D, S.

D

C

(OFF) “OFF” switch source capacitance.

S

C

, CS (ON) “ON” switch capacitance.

D

t

ON

Delay between applying the digital control

input and the output switching on.

PIN CONFIGURATION

(DIP/SOIC)

t

OFF

Delay between applying the digital control
input and the output switching off.

t

OPEN

Break-before-make delay when switches are

configured as a multiplexer.
V
V
I

INL

INH

INL

(I

INH

Maximum input voltage for Logic “0.”

Minimum input voltage for Logic “1.”

) Input current of the digital input.

Crosstalk A measure of unwanted signal that is coupled

through from one channel to another as a result

of parasitic capacitance.
Off Isolation A measure of unwanted signal coupling

through an “OFF” switch.
Charge Injection A measure of the glitch impulse transferred

from the digital input to the analog output

during switching.
I

DD

I

SS

Positive supply current.

Negative supply current.

IN1

1

S1A

2

D1

3

S1B

4

V

5

SS

(Not to Scale)

GND

6

NC

7

NC

8

NC = NO CONNECT

ADG436

TOP VIEW

NC

16

NC

15

NC

14

V

13

DD

S2B

12

D2

11

S2A

10

IN2

9

REV. A –5–

VD, VS – Volts

R

ON

– V

16

14

6
–15 –10 15

–5 0 5 10

12

10

8

VDD = +16.5V
V

SS

= –16.5V

+858C

+258C

–408C

ADG436–Typical Performance Characteristics

26

TA = +258C

22

18

– V

ON

14

R

10

6
–15 –10 15

VDD = +5V
V

SS

VDD = +10V
V

VDD = +15V

= –15V

V

SS

–5 0 5 10

VD, VS – Volts

= –5V

SS

= –10V

Figure 1. RON as a Function of VD (VS):
Dual Supply

20

18

16

– V

ON

14

R

12

10

03 156912

VD, VS – Volts

+858C

+258C

–408C

V

DD

V

SS

= +16.5V
= 0V

Figure 4. RON as a Function of VD (VS)
for Different Temperatures: Single
Supply

50

45

40

35

30

– V

ON

R

25

20

15

10

03 15

VDD = +5V

= 0V

V

SS

VDD = +10V

= 0V

V

SS

VDD = +15V

= 0V

V

SS

6912

VD, VS – Volts

Figure 2. RON as a Function of VD (VS):
Single Power Supply

0.01
VDD = +16.5V

= –16.5V

V

SS

= +258C

T

A

0

–0.01

(ON) – nA

D

I

–0.02

–0.03

–15 –10 15

–5 0 5 10

VD, VS – Volts

Figure 5. ID (ON) Leakage Current as a
Function of V

(VS): Dual Supply

D

Figure 3. RON as a Function of VD (VS)
for Different Temperatures: Dual
Supply

0.01
VDD = +16.5V

= –16.5V

V

SS

= +258C

T

A

0

–0.01

(OFF) – nA

S

I

–0.02

–0.03

–15 –10 15

–5 0 5 10

VD, VS – Volts

Figure 6. IS (OFF) Leakage Current as
a Function of V

(VS): Dual Supply

D

0.01
VDD = +16.5V

= –16.5V

V

SS

= +258C

T

A

0

–0.01

(ON) – nA

S

I

–0.02

–0.03

–15 –10 15

Figure 7. IS (ON) Leakage Current as a
Function of V

–5 0 5 10

VD, VS – Volts

(VS): Dual Supply

D

160

VD = 2V

= –2V

V

S

140

120

100

SWITCHING TIME – ns

80

60

05

10 15 20

VD, VS – Volts

Figure 8. Switching Time as a Func­tion of V

(VS): Dual Supply

D

–6–

1

V

= +16.5V

DD

= –16.5V

V

SS

0.8

= +258C

T

A

0.6

– mA

DD

I

0.4

0.2

0

0 200 1000400 600 800

SWITCHING FREQUENCY – kHz

Figure 9. IDD as a Function of Switch­ing Frequency: Dual Supply

REV. A

I

V

D

S

D

A

ID(ON)

NC

NC = NO CONNECT

DS

V

1

S

RON = V1/I

D

DS

V

D

Test Circuit 1. On Resistance

0.1mF

V

DD

–10V

V

S

+10V

SB

SA

IN

GND

0.1mF

V

SB

S

SA

IN

GND

Test Circuits–

ADG436

IS(OFF)

A

V

S

Test Circuit 2. Off Leakage

V

DD

D

R
300V 35pF

V

SS

V

SS

V

DD0.1mF

V

DD

D

V

SS

C

L

Test Circuit 4. Switching Times

R

L

300V 35pF

S

D

V

D

Test Circuit 3. On Leakage

3V

V

V

OUT

IN

0V

+10V

V

0V

L

S

–10V

3V

V

OUT

C

L

V

0V
V

S

IN

V

OUT

t

OPEN

50% 50%

t

OFF

t

ON

50% 50%

50%

0.1mF
V

SS

Test Circuit 5. Break-Before-Make Delay, t

V

DD

V

DD

V

C

L

10nF

OUT

R

D

V

D

DSA

IN

GND

V

SS

V

SS

Test Circuit 6. Charge Injection

0.1mF

V

DD

V

DD

V

OUT

DS

R

V

S

REV. A –7–

V

IN

GND

0.1mF

Test Circuit 7. Off Isolation

V

SS

V

SS

75V

L

OPEN

3V

V

IN

0V

V

OUT

0V

V

S

V

IN1

NC

CHANNEL-TO-CHANNEL
CROSSTALK
20 3 Log |V

S/VOUT

|

Q

= CL 3 DV

INJ

0.1mF

GNDDSV

0.1mF

OUT

V

DD

V

DD

SD

SS

V

DV

OUT

75V

V

IN2

SS

Test Circuit 8. Channel-to-Channel Crosstalk

R
75V

V

OUT

L

ADG436

16 9

81

0.3937 (10.00)

0.3859 (9.80)

0.2550 (6.20)

0.2284 (5.80)

0.1574 (4.00)

0.1497 (5.80)

PIN 1

SEATING

PLANE

0.0098 (0.25)

0.0040 (0.10)

0.0192 (0.49)

0.0138 (0.35)

0.0688 (1.75)

0.0532 (1.35)

0.0500
(1.27)

BSC

0.0099 (0.25)

0.0075 (0.19)

0.0500 (1.27)

0.0160 (0.41)

8°
0°

0.0196 (0.50)

0.0099 (0.25)

x 45°

APPLICATIONS INFORMATION

ADG436 Supply Voltages

The ADG436 can operate from a dual or single supply. V

should

SS

be connected to GND when operating with a single supply. When
using a dual supply, the ADG436 can also operate with unbal­anced supplies, for example V
only restrictions are that V

to GND must not drop below –30 V and VDD to V

V

SS

= 20 V and VSS = –5 V. The

DD

to GND must not exceed 30 V,

DD

SS

must
not exceed +44 V. It is important to remember that the ADG436
supply voltage directly affects the input signal range, the switch
ON resistance and the switching times of the part. The effects of
the power supplies on these characteristics can be clearly seen
from the characteristic curves in this data sheet.

OUTLINE DIMENSIONS

Dimensions are shown in inches and (mm).

16-Lead Plastic DIP

(N-16)

0.840 (21.33)

0.745 (18.93)

0.210 (5.33)
MAX

0.160 (4.06)

0.115 (2.93)

16

18

PIN 1

0.022 (0.558)

0.014 (0.356)

0.100
(2.54)

BSC

9

0.060 (1.52)

0.015 (0.38)

0.070 (1.77)

0.045 (1.15)

0.280 (7.11)

0.240 (6.10)

0.130
(3.30)
MIN

SEATING
PLANE

0.325 (8.25)

0.300 (7.62)

0.015 (0.381)

0.008 (0.204)

0.195 (4.95)

0.115 (2.93)

Power-Supply Sequencing

When using CMOS devices, care must be taken to ensure correct
power-supply sequencing. Incorrect power-supply sequencing can
result in the device being subjected to stresses beyond those
maximum ratings listed in the data sheet. Always sequence V

DD

on first followed by VSS and the logic signals. An external signal
can then be safely presented to the source or drain of the switch.

16-Lead Narrow Body SOIC

(R-16A)

C2108a–0–11/98

PRINTED IN U.S.A.

REV. A–8–