Datasheet ADG419TQ, ADG419BRM, ADG419BR, ADG419BN Datasheet (Analog Devices)

LC2MOS Precision
a
FEATURES 44 V Supply Maximum Ratings VSS to VDD Analog Signal Range Low On Resistance (< 35 ⍀) Ultralow Power Dissipation (< 35 W) Fast Transition Time (160 ns max) Break-Before-Make Switching Action Plug-In Replacement for DG419
APPLICATIONS Precision Test Equipment Precision Instrumentation Battery Powered Systems Sample Hold Systems
GENERAL DESCRIPTION
The ADG419 is a monolithic CMOS SPDT switch. This switch is designed on an enhanced LC vides low power dissipation yet gives high switching speed, low on resistance and low leakage currents.
The on resistance profile of the ADG419 is very flat over the full analog input range, ensuring excellent linearity and low distor­tion. The part also exhibits high switching speed and high signal bandwidth. CMOS construction ensures ultralow power dissipa­tion, making the parts ideally suited for portable and battery powered instruments.
Each switch of the ADG419 conducts equally well in both directions when ON and has an input signal range that extends to the supplies. In the OFF condition, signal levels up to the supplies are blocked. The ADG419 exhibits break-before­make switching action.
2
MOS process that pro-
Mini-DIP Analog Switch
ADG419

FUNCTIONAL BLOCK DIAGRAM

D
S1
ADG419
SWITCH SHOWN FOR A LOGIC "1" INPUT

PRODUCT HIGHLIGHTS

1. Extended Signal Range The ADG419 is fabricated on an enhanced LC cess, giving an increased signal range that extends to the supply rails.
2. Ultralow Power Dissipation
3. Low R
4. Single Supply Operation
ON
For applications where the analog signal is unipolar, the ADG419 can be operated from a single rail power supply. The part is fully specified with a single +12 V power supply and will remain functional with single supplies as low as +5 V.
S2
IN
2
MOS pro-
REV. A
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 World Wide Web Site: http://www.analog.com Fax: 781/326-8703 © Analog Devices, Inc., 1998
ADG419–SPECIFICATIONS
1
(V

Dual Supply

= +15 V 10%, V
DD
Parameter +25ⴗC +85ⴗC +25ⴗC +125ⴗC Units Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range V R
ON
LEAKAGE CURRENTS V
Source OFF Leakage I
Drain OFF Leakage I
Channel ON Leakage ID, I
(OFF) ±0.1 ±0.1 nA typ VD = ±15.5 V, V
S
(OFF) ±0.1 ±0.1 nA typ VD = ±15.5 V, V
D
(ON) ±0.4 ±0.4 nA typ V
S
DIGITAL INPUTS
Input High Voltage, V Input Low Voltage, V
INH
INL
Input Current
or I
I
INL
INH
DYNAMIC CHARACTERISTICS
t
TRANSITION
2
Break-Before-Make Time 30 30 ns typ R Delay, t
D
OFF Isolation 80 80 dB typ R
Channel-to-Channel Crosstalk 90 70 dB typ R
(OFF) 6 6 pF typ f = 1 MHz
C
S
CD, CS (ON) 55 55 pF typ f = 1 MHz
POWER REQUIREMENTS V
I
DD
I
SS
I
L
NOTES
1
Temperature ranges are as follows: B Version: –40°C to +85°C; T Version: –55°C to +125°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
= –15 V 10%, VL = +5 V 10%, GND = 0 V, unless otherwise noted)
SS
B Version T Version
–40ⴗC to –55ⴗC to
SS
to V
DD
VSS to V
DD
V
25 25 typ VD = ±12.5 V, I 35 45 35 45 max V
= +13.5 V, VSS = –13.5 V
DD
= +16.5 V, VSS = –16.5 V
DD
±0.25 ±5 ±0.25 ±15 nA max Test Circuit 2 ±0.75 ±5 ±0.75 ±30 nA max Test Circuit 2
= V
= ±15.5 V;
S
D
±0.75 ±5 ±0.75 ±30 nA max Test Circuit 3
2.4 2.4 V min
0.8 0.8 V max
±0.005 ±0.005 µA typ V
IN
= V
INL
or V
±0.5 ±0.5 µA max
160 200 145 200 ns max R
= 300 , C
L
= ±10 V, V
V
S1
Test Circuit 4
= 300 , C
5 5 ns min VS1 = V
L
= ±10 V;
S2
Test Circuit 5
= 50 , f = 1 MHz;
L
Test Circuit 6
= 50 , f = 1 MHz;
L
Test Circuit 7
= +16.5 V, VSS = –16.5 V
0.0001 0.0001 µA typ V
DD
= 0 V or 5 V
IN
1 2.5 1 2.5 µA max
0.0001 0.0001 µA typ 1 2.5 1 2.5 µA max
0.0001 0.0001 µA typ V
= +5.5 V
L
1 2.5 1 2.5 µA max
= –10 mA
S
= ⫿15.5 V;
S
= ⫿15.5 V;
S
INH
= 35 pF;
L
= ⫿10 V;
S2
= 35 pF;
L
–2–
REV. A
ADG419
(V

Single Supply

= +12 V 10%, V
DD
Parameter +25ⴗC +85ⴗC +25ⴗC +125ⴗC Units Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 to V R
ON
LEAKAGE CURRENT V
Source OFF Leakage I
Drain OFF Leakage I
Channel ON Leakage I
(OFF) ±0.1 ±0.1 nA typ V
S
(OFF) ±0.1 ±0.1 nA typ V
D
, I
(ON) ±0.4 ±0.4 nA typ V
D
S
DIGITAL INPUTS
Input High Voltage, V Input Low Voltage, V
INH
INL
Input Current
I
or I
INL
INH
DYNAMIC CHARACTERISTICS
t
TRANSITION
2
Break-Before-Make Time 60 60 ns typ R Delay, t
D
OFF Isolation 80 80 dB typ R
Channel-to-Channel Crosstalk 90 70 dB typ R
CS (OFF) 13 13 pF typ f = 1 MHz CD, CS (ON) 65 65 pF typ f = 1 MHz
POWER REQUIREMENTS V
I
DD
I
L
NOTES
1
Temperature ranges are as follows: B Version: –40°C to +85°C; T Version: –55°C to +125°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
= 0 V, VL = +5 V 10%, GND = 0 V, unless otherwise noted)
SS
B Version T Version
–40C to –55C to
DD
0 to V
DD
40 40 typ V
60 70 max V
V
= +3 V, +8.5 V, IS = –10 mA
D
= +10.8 V
DD
= +13.2 V
DD
= 12.2 V/1 V, VS = 1 V/12.2 V;
D
±0.25 ±5 ±0.25 ±15 nA max Test Circuit 2
= 12.2 V/1 V, VS = 1 V/12.2 V;
D
±0.75 ±5 ±0.75 ±30 nA max Test Circuit 2
= VD = 12.2 V/1 V;
S
±0.75 ±5 ±0.75 ±30 nA max Test Circuit 3
2.4 2.4 V min
0.8 0.8 V max
±0.005 ±0.005 µA typ V
IN
= V
INL
or V
±0.5 ±0.5 µA max
180 250 170 250 ns max R
= 300 , C
L
= 0 V/8 V, VS2 = 8 V/0 V;
V
S1
Test Circuit 4
= 300 , C
L
VS1 = VS2 = +8 V; Test Circuit 5
= 50 , f = 1 MHz;
L
Test Circuit 6
= 50 , f = 1 MHz;
L
Test Circuit 7
= +13.2 V
0.0001 0.0001 µA typ V
DD
= 0 V or 5 V
IN
1 2.5 1 2.5 µA max
0.0001 0.0001 µA typ V
= +5.5 V
L
1 2.5 1 2.5 µA max
INH
= 35 pF;
L
= 35 pF;
L
Table I. Truth Table
Logic Switch 1 Switch 2
0 ON OFF 1 OFF ON

ORDERING GUIDE

Model Temperature Ranges Package Options*
ADG419BN –40°C to +85°C N-8 ADG419BR –40°C to +85°C SO-8 ADG419BRM –40°C to +85°C RM-8 ADG419TQ –55°C to +125°C Q-8
*N = Plastic DIP, Q = Cerdip, RM = µSOIC, SO = 0.15" Small Outline IC (SOIC).
REV. A
–3–
PIN CONFIGURATION
DIP/SOIC/SOIC
8
S2
7
V
SS
6
IN
5
V
L
GND
V
D
S1
DD
1
2
ADG419
TOP VIEW
3
(Not to Scale)
4
ADG419
WARNING!
ESD SENSITIVE DEVICE

ABSOLUTE MAXIMUM RATINGS

(T
= +25°C unless otherwise noted)
A
VDD to VSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+44 V
to GND . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +25 V
V
DD
V
to GND . . . . . . . . . . . . . . . . . . . . . . . . . . +0.3 V to –25 V
SS
V
to GND . . . . . . . . . . . . . . . . . . . . . . –0.3 V to VDD + 0.3 V
L
Analog, Digital Inputs
2
. . . . . . . . . . . . VSS – 2 V to VDD + 2 V
or 30 mA, Whichever Occurs First
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . 30 mA
Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
(Pulsed at 1 ms, 10% Duty Cycle Max)
Operating Temperature Range
Industrial (B Version) . . . . . . . . . . . . . . . . . –40°C to +85°C
Extended (T Version) . . . . . . . . . . . . . . . . –55°C to +125°C
Storage Temperature Range . . . . . . . . . . . . . –65°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Cerdip Package, Power Dissipation . . . . . . . . . . . . . . .600 mW
, Thermal Impedance . . . . . . . . . . . . . . . . . . . . 110°C/W
θ
JA
1
Plastic Package, Power Dissipation . . . . . . . . . . . . . . . 400 mW
, Thermal Impedance . . . . . . . . . . . . . . . . . . . . 100°C/W
θ
JA
Lead Temperature, Soldering (10 sec) . . . . . . . . . . . +260°C
SOIC Package, Power Dissipation . . . . . . . . . . . . . . . . 400 mW
, Thermal Impedance . . . . . . . . . . . . . . . . . . . . 155°C/W
θ
JA
µSOIC Package, Power Dissipation . . . . . . . . . . . . . . . 315 mW
, Thermal Impedance . . . . . . . . . . . . . . . . . . . . 205°C/W
θ
JA
Lead Temperature, Soldering
Vapor Phase (60 sec). . . . . . . . . . . . . . . . . . . . . . . +215°C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . +220°C
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Only one absolute maximum rating may be applied at any one time.
2
Overvoltages at IN, S or D will be clamped by internal diodes. Current should be
limited to the maximum ratings given.
Lead Temperature, Soldering (10 sec) . . . . . . . . . . . +300°C
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the ADG419 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.

TERMINOLOGY

V
DD
V
SS
Most positive power supply potential. Most negative power supply potential in dual
supplies. In single supply applications, it may be connected to GND.
V
L
Logic power supply (+5 V). GND Ground (0 V) reference. S Source terminal. May be an input or an
output. D Drain terminal. May be an input or an
output. IN Logic control input. R
ON
I
(OFF) Source leakage current with the switch
S
Ohmic resistance between D and S.
“OFF.” I
(OFF) Drain leakage current with the switch
D
“OFF.” I
, IS (ON) Channel leakage current with the switch
D
“ON.” V
(VS) Analog voltage on terminals D, S.
D
C
(OFF) “OFF” switch source capacitance.
S
CD, CS (ON) “ON” switch capacitance. t
TRANSITION
Delay time between the 50% and 90% points of the digital inputs and the switch “ON”
condition when switching from one address state to another.
t
D
“OFF” time or “ON” time measured be­tween the 90% points of both switches when switching from one address state
to the other. V V I
INL
INH
INL
(I
) Input current of the digital input.
INH
Maximum input voltage for logic “0.”
Minimum input voltage for logic “1.”
Crosstalk A measure of unwanted signal which is
coupled through from one channel to
another as a result of parasitic capacitance. Off Isolation A measure of unwanted signal coupling
through an “OFF” channel. I
DD
I
SS
Positive supply current.
Negative supply current.
–4–
REV. A
Typical Performance Characteristics–
VDD = +12V V
SS
= 0V
T
A
= +258C
IS (OFF)
ID (OFF)
ID (ON)
VS, VD – Volts
0.006
0.004
–0.004
122
LEAKAGE CURRENT – nA
46810
0.002
0.000
–0.002
0
ADG419
50
40
30
V
ON
R
20
10
0
–15 15–10
TA = +258C
VDD = +12V V
= –12V
SS
–5 0 5 10
VDD = +5V V
SS
VDD = +10V V
= –10V
SS
VS, VD – Volts
= –5V
VDD = +15V V
= –15V
SS
Figure 1. RON as a Function of VD (VS): Dual Supply Voltage
50
VDD = +15V V
= –15V
SS
= +5V
V
L
40
30
V
ON
R
20
+1258C
100
TA = +258C
80
60
V
ON
R
40
VDD = +5V
V
= 0V
SS
VDD = +10V
V
= 0V
SS
VDD = +12V
V
= 0V
SS
20
VDD = +15V
V
= 0V
0
0
VS, VD – Volts
SS
10
155
Figure 4. RON as a Function of VD (VS): Single Supply Voltage
100
VDD = +12V V
= 0V
SS
= +5V
V
L
80
60
V
ON
R
40
+1258C
10
0
–15 15–10
+858C
–5
VS, VD – Volts
0
+258C
510
Figure 2. RON as a Function of VD (VS) for Different Temperatures
0.02 VDD = +15V V
= –15V
SS
T
= +258C
A
0.01
IS (OFF)
0.00
–0.01
LEAKAGE CURRENT – nA
– 0.02
–0.03
–15 15–10
–5
VS, VD – Volts
0
ID (ON)
ID (OFF)
510
Figure 3. Leakage Currents as a Function of VS (VD)
20
0
0
+858C
+258C
69
VS, VD – Volts
Figure 5. RON as a Function of VD (VS) for Different Temperatures
Figure 6. Leakage Currents as a Function of VS (VD)
123
REV. A
–5–
ADG419
SD
V
S
V
D
ID (ON)
10mA
1mA
100mA
10mA
SUPPLY
I
1mA
100nA
10nA
VDD = +15V V
= –15V
SS
= +5V
V
L
I+, I–
220
200
180
– ns
160
140
TRANSITION
I
L
t
120
DUAL SUPPLY
V
100
= 65V
IN
SINGLE SUPPLY
V
= 0V/5V
IN
1nA
2
10
3
10
4
10
FREQUENCY – Hz
10
5
6
10
10
Figure 7. Supply Current vs. Input Switching Frequency

Test Circuits

I
DS
V1
SD
V
S
RON = V1/I
DS
Test Circuit 1. On Resistance
+15V +5V
V
DD
S1
V
S1
S2
V
S2
IN
V
IN
GND
V
V
SS
–15V
L
D
Test Circuit 4. Transition Time,
IS (OFF) ID (OFF)
V
S
Test Circuit 2. Off Leakage
V
OUT
R
C
L
300V
L
35pF
7
SD
V
IN
t
OUTPUT
80
6168
10 12 14
SUPPLY VOLTAGE – Volts
Figure 8. Transition Time vs. Power Supply Voltage
V
D
Test Circuit 3. On Leakage
3V
50% 50%
0V
TRANSITION
90%
t
TRANSITION
t
TRANSITION
90%
+15V +5V
V
V
L
DD
V
–15V
D
C
R 300V
SS
L
L
35pF
S1
V
S1
S2
V
S2
IN
V
IN
GND
ADDRESS DRIVE(VIN)
V
OUT
Test Circuit 5. Break-Before-Make Time Delay,
–6–
3V
0V
t
0.9V
D
0.9V
O
O
t
D
V
OUT
0.9V
t
D
0.9V
O
O
REV. A
ADG419
+15V +5V
0.1mF 0.1mF
+15V +5V
0.1mF 0.1mF
V
V
L
DD
S
IN
V
S
GND
V
IN
Test Circuit 6. Off Isolation
0.1mF
V
–15V
D
SS
R 50V
V
OUT
L
V
S
V
OUT
R
L
50V
CHANNEL-TO-CHANNEL CROSSTALK = 20 3 LOG | VS/V
Test Circuit 7. Crosstalk
S1
S2
V
GND
DD
0.1mF
V
V
–15V
L
D
SS
50V
V
IN
|
OUT
REV. A
–7–
ADG419
OUTLINE DIMENSIONS
Dimensions shown in inches and (mm).
0.210 (5.33) MAX
0.160 (4.06)
0.115 (2.93)
0.022 (0.558)
0.014 (0.356)
0.122 (3.10)
0.114 (2.90)
0.006 (0.15)
0.002 (0.05) SEATING
PLANE
8-Lead Plastic DIP (N-8)
0.430 (10.92)
0.348 (8.84)
8
14
PIN 1
0.100
(2.54)
BSC
0.122 (3.10)
0.114 (2.90)
8
1
PIN 1
0.0256 (0.65) BSC
0.120 (3.05)
0.112 (2.84)
0.018 (0.46)
0.008 (0.20)
5
0.280 (7.11)
0.240 (6.10)
0.060 (1.52)
0.015 (0.38)
0.070 (1.77)
0.045 (1.15)
0.130 (3.30) MIN
SEATING PLANE
0.325 (8.25)
0.300 (7.62)
8-Lead SOIC (RM-8)
5
0.199 (5.05)
0.187 (4.75)
4
0.043 (1.09)
0.037 (0.94)
0.011 (0.28)
0.003 (0.08)
0.015 (0.381)
0.008 (0.204)
0.120 (3.05)
0.112 (2.84)
338 278
0.195 (4.95)
0.115 (2.93)
0.028 (0.71)
0.016 (0.41)
0.200 (5.08) MAX
0.200 (5.08)
0.125 (3.18)
0.023 (0.58)
0.014 (0.36)
0.1574 (4.00)
0.1497 (3.80)
0.0098 (0.25)
0.0040 (0.10)
SEATING
PLANE
0.005 (0.13) MIN
8
1
0.405 (10.29)
0.1968 (5.00)
0.1890 (4.80)
8
PIN 1
0.0500 (1.27)
BSC
8-Lead Cerdip (Q-8)
0.055 (1.4) MAX
5
0.310 (7.87)
0.220 (5.59)
4
PIN 1
MAX
0.100 (2.54)
BSC
0.060 (1.52)
0.015 (0.38)
0.070 (1.78)
0.030 (0.76)
0.150 (3.81) MIN
SEATING PLANE
8-Lead SOIC (SO-8)
(Narrow Body)
5
0.2440 (6.20)
41
0.2284 (5.80)
0.0688 (1.75)
0.0532 (1.35)
0.0192 (0.49)
0.0138 (0.35)
0.0098 (0.25)
0.0075 (0.19)
0.320 (8.13)
0.290 (7.37)
15°
0.0196 (0.50)
0.0099 (0.25)
8° 0°
0.0500 (1.27)
0.0160 (0.41)
C1926a–0–9/98
0.015 (0.38)
0.008 (0.20)
x 45°
–8–
PRINTED IN U.S.A.
REV. A
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