Datasheet ADG417BR, ADG417BN Datasheet (Analog Devices)

LC2MOS Precision

ADG417

IN

D

S

SWITCH SHOWN FOR A

LOGIC "1" INPUT

a

FEATURES
44 V Supply Maximum Ratings
V

to VDD Analog Signal Range

SS

Low On Resistance (<35 ⍀)
Ultralow Power Dissipation (<35 ␮W)
Fast Switching Times

t

(160 ns max)

ON

t

(100 ns max)

OFF

Break-Before-Make Switching Action
Plug-In Replacement for DG417

APPLICATIONS
Precision Test Equipment
Precision Instrumentation
Battery Powered Systems
Sample Hold Systems

GENERAL DESCRIPTION

The ADG417 is a monolithic CMOS SPST switch. This switch
is designed on an enhanced LC
power dissipation yet gives high switching speed, low on resis­tance and low leakage currents.

The on resistance profile of the ADG417 is very flat over the
full analog input range ensuring excellent linearity and low
distortion. The part also exhibits high switching speed and high
signal bandwidth. CMOS construction ensures ultralow power
dissipation making the parts ideally suited for portable and
battery powered instruments.

The ADG417 switch, which is turned ON with a logic low on
the control input, conducts equally well in both directions when
ON and has an input signal range that extends to the supplies.
In the OFF condition, signal levels up to the supplies are
blocked. The ADG417 exhibits break-before-make switching
action for use in multiplexer applications. Inherent in the design
is low charge injection for minimum transients when switching
the digital input.

2

MOS process that provides low

Mini-DIP Analog Switch

ADG417

FUNCTIONAL BLOCK DIAGRAM

PRODUCT HIGHLIGHTS

1. Extended Signal Range
The ADG417 is fabricated on an enhanced LC
giving an increased signal range that extends to the supply
rails.

2. Ultralow Power Dissipation

3. Low R

4. Single Supply Operation

ON

For applications where the analog signal is unipolar, the
ADG417 can be operated from a single rail power supply.
The part is fully specified with a single +12 V power supply
and will remain functional with single supplies as low as
+5 V.

2

MOS process,

REV. A

Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone] World Wide Web Site: http://www.analog.com
Fax: [phone] © Analog Devices, Inc., 1998

ADG417–SPECIFICATIONS

1

(V

Dual Supply

= +15 V ⴞ 10%, V

DD

Parameter +25ⴗC +85ⴗC +25ⴗC +125ⴗC Units Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range V
R

ON

LEAKAGE CURRENTS V

Source OFF Leakage I

Drain OFF Leakage I

Channel ON Leakage I

(OFF) ±0.1 ±0.1 nA typ VD = ±15.5 V, V

S

(OFF) ±0.1 ±0.1 nA typ VD = ±15.5 V, V

D

, I

(ON) ±0.1 ±0.1 nA typ V

D

S

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V

INH

INL

Input Current

I

or I

INL

INH

DYNAMIC CHARACTERISTICS

t

ON

t

OFF

2

Charge Injection 7 7 pC typ V

OFF Isolation 80 80 dB typ R

C

(OFF) 6 6 pF typ

S

C

(OFF) 6 6 pF typ

D

CD, CS (ON) 55 55 pF typ

POWER REQUIREMENTS V

I

DD

I

SS

I

L

NOTES

1

Temperature ranges are as follows: B Version: –40°C to +85°C; T Version: –55°C to +125°C.

2

Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

= –15 V ⴞ 10%, VL = +5 V ⴞ 10%, GND = 0 V, unless otherwise noted)

SS

B Version T Version

–40ⴗC to –55ⴗC to

SS

to V

DD

VSS to V

DD

V

25 25 Ω typ VD = ±12.5 V, I
35 45 35 45 Ω max V

= +13.5 V, VSS = –13.5 V

DD

= +16.5 V, VSS = –16.5 V

DD

±0.25 ±5 ±0.25 ±15 nA max Test Circuit 2
±0.25 ±5 ±0.25 ±15 nA max Test Circuit 2

= V

= ±15.5 V;

S

D

±0.4 ±5 ±0.4 ±30 nA max Test Circuit 3

2.4 2.4 V min

0.8 0.8 V max

±0.005 ±0.005 µA typ V

IN

= V

INL

or V

±0.5 ±0.5 µA max

100 100 ns typ R
160 200 145 200 ns max V
60 60 ns typ R
100 150 100 150 ns max V

= 300 Ω, C

L

= ±10 V; Test Circuit 4

S

= 300 Ω, C

L

= ±10 V; Test Circuit 4

S

= 0 V, R

S

C

= 10 nF; Test Circuit 5

L

= 50 Ω, f = 1 MHz;

L

= 0 Ω,

L

Test Circuit 6

= +16.5 V, VSS = –16.5 V

0.0001 0.0001 µA typ V

DD

= 0 V or 5 V

IN

1 2.5 1 2.5 µA max

0.0001 0.0001 µA typ
1 2.5 1 2.5 µA max

0.0001 0.0001 µA typ V

= +5.5 V

L

1 2.5 1 2.5 µA max

= –10 mA

S

= ⫿15.5 V;

S

= ⫿15.5 V;

S

INH

= 35 pF;

L

= 35 pF;

L

–2–

REV. A

ADG417

TOP VIEW

(Not to Scale)

8

7

6

5

1

2

3

4

S

NC

GND

D
V

SS

IN
V

L

V

DD

ADG417

NC = NO CONNECT

Single Supply

Parameter +25ⴗC +85ⴗC +25ⴗC +125ⴗC Units Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range 0 to V
R

ON

LEAKAGE CURRENT V

Source OFF Leakage I

Drain OFF Leakage I

Channel ON Leakage I

DIGITAL INPUTS

Input High Voltage, V
Input Low Voltage, V
Input Current

I

or I

INL

INH

DYNAMIC CHARACTERISTICS

t

ON

t

OFF

Charge Injection 11 11 pC typ V

OFF Isolation 80 80 dB typ R

C

(OFF) 13 13 pF typ

S

C

(OFF) 13 13 pF typ

D

CD, CS (ON) 65 65 pF typ

POWER REQUIREMENTS V

I

DD

I

L

NOTES

1

Temperature ranges are as follows: B Version: –40°C to +85°C; T Version: –55°C to +125°C.

2

Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

1

(V

= +12 V ⴞ 10%, V

DD

(OFF) ±0.1 ±0.1 nA typ V

S

(OFF) ±0.1 ±0.1 nA typ V

D

, I

(ON) ±0.1 ±0.1 nA typ V

D

S

INH

INL

2

= 0 V, VL = +5 V ⴞ 10%, GND = 0 V, unless otherwise noted)

SS

B Version T Version

–40ⴗC to –55ⴗC to

DD

0 to V

DD

V

40 40 Ω typ V

60 70 Ω max V

±0.25 ±5 ±0.25 ±15 nA max Test Circuit 2
±0.25 ±5 ±0.25 ±15 nA max Test Circuit 2
±0.4 ±5 ±0.4 ±30 nA max Test Circuit 3

2.4 2.4 V min

0.8 0.8 V max

±0.005 ±0.005 µA typ V
±0.5 ±0.5 µA max

180 250 180 250 ns max R

85 110 85 110 ns max R

0.0001 0.0001 µA typ V

12.5 12.5 µA max

0.0001 0.0001 µA typ V

12.5 12.5 µA max

= +3 V, +8.5 V, IS = –10 mA

D

= +10.8 V

DD

= +13.2 V

DD

= 12.2 V/1 V, VS = 1 V/12.2 V;

D

= 12.2 V/1 V, VS = 1 V/12.2 V;

D

= VD = 12.2 V/1 V;

S

= V

INL

or V

= 0 Ω,

S

INH

= 35 pF;

L

= 35 pF;

L

IN

= 300 Ω, C

L

V

= +8 V; Test Circuit 4

S

= 300 Ω, C

L

V

= +8 V; Test Circuit 4

S

= 0 V, R

S

C

= 10 nF; Test Circuit 5

L

= 50 Ω, f = 1 MHz;

L

Test Circuit 6

= +13.2 V

DD

= 0 V or 5 V

IN

= +5.5 V

L

Table I. Truth Table

Logic Switch Condition

0ON
1 OFF

ORDERING GUIDE

Model Temperature Range Package Options*

ADG417BN –40°C to +85°C N-8
ADG417BR –40°C to +85°C SO-8

*N = Plastic DIP, SO = 0.15" Small Outline IC (SOIC).

REV. A –3–

PIN CONFIGURATION

DIP/SOIC

ADG417

ABSOLUTE MAXIMUM RATINGS

(T

= +25°C unless otherwise noted)

A

VDD to VSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +44 V

to GND . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +25 V

V

DD

to GND . . . . . . . . . . . . . . . . . . . . . . . . . . +0.3 V to –25 V

V

SS

to GND . . . . . . . . . . . . . . . . . . . . . . –0.3 V to VDD + 0.3 V

V

L

Analog, Digital Inputs

2

. . . . . . . . . . . . . VSS – 2 V to VDD +2 V

or 30 mA, Whichever Occurs First

1

Plastic Package, Power Dissipation . . . . . . . . . . . . . . . 400 mW

, Thermal Impedance . . . . . . . . . . . . . . . . . . . . 100°C/W

θ

JA

Lead Temperature, Soldering (10 sec) . . . . . . . . . . . +260°C

SOIC Package, Power Dissipation . . . . . . . . . . . . . . . . 400 mW

, Thermal Impedance . . . . . . . . . . . . . . . . . . . . 155°C/W

θ

JA

Lead Temperature, Soldering

Vapor Phase (60 sec). . . . . . . . . . . . . . . . . . . . . . . +215°C

Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . +220°C

Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . 30 mA

Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA

(Pulsed at 1 ms, 10% Duty Cycle Max)

Operating Temperature Range

Industrial (B Version) . . . . . . . . . . . . . . . . . –40°C to +85°C

Extended (T Version) . . . . . . . . . . . . . . . . –55°C to +125°C

Storage Temperature Range . . . . . . . . . . . . . –65°C to +150°C

Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . 150°C

NOTES

1

Stresses above those listed under Absolute Maximum Ratings may cause perma-

nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. Only one absolute
maximum rating may be applied at any one time.

2

Overvoltages at IN, S or D will be clamped by internal diodes. Current should be

limited to the maximum ratings given.

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the ADG417 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.

WARNING!

ESD SENSITIVE DEVICE

TERMINOLOGY

V

DD

V

SS

Most positive power supply potential.
Most negative power supply potential in dual

supplies. In single supply applications, it
may be connected to GND.

V

L

Logic power supply (+5 V).
GND Ground (0 V) reference.
S Source terminal. May be an input or an

output.
D Drain terminal. May be an input or an

output.
IN Logic control input.

R

ON

I

(OFF) Source leakage current with the switch

S

Ohmic resistance between D and S.

“OFF.”

(OFF) Drain leakage current with the switch

I

D

“OFF.”

, IS (ON) Channel leakage current with the switch

I

D

“ON.”

VD (VS) Analog voltage on terminals D, S.
C

(OFF) “OFF” switch source capacitance.

S

C

(OFF) “OFF” switch drain capacitance.

D

C

, CS (ON) “ON” switch capacitance.

D

t

ON

Delay between applying the digital control
input and the output switching on.

t

OFF

Delay between applying the digital control
input and the output switching off.

V
V
I

INL

INH

INL

(I

) Input current of the digital input.

INH

Maximum input voltage for logic “0.”
Minimum input voltage for logic “1.”

Charge Injection A measure of the glitch impulse transferred

from the digital input to the analog output
during switching.

Off Isolation A measure of unwanted signal coupling

through an “OFF” channel.

I

DD

I

SS

I

L

Positive supply current.
Negative supply current.
Logic supply current.

REV. A–4–

100

0

15

60

20

5

40

0

80

10

R

ON

– V

VS, VD – Volts

T

A

= +258C

VDD = +5V
V

SS

= 0V

VDD = +10V
V

SS

= 0V

VDD = +12V
V

SS

= 0V

VDD = +15V
V

SS

= 0V

R

ON

– V

VS, VD – Volts

100

0

12

60

20

3

40

0

80

9

6

VDD = +12V
V

SS

= 0V

V

L

= +5V

+1258C

+258C

+858C

0.006

–0.004

12

0.002

–0.002

2

0.000

0

0.004

10864

LEAKAGE CURRENT – nA

VS, VD – Volts

ID (OFF)

I

D

(ON)

I

S

(OFF)

VDD = +12V
V

SS

= 0V

T

A

= +258C

Typical Performance Characteristics–ADG417

50

TA = +258C

40

VDD = +5V

= –5V

V

SS

30

– V

ON

R

20

10

0

–15

–10

VDD = +12V

= –12V

V

SS

VS, VD – Volts

VDD = +10V

= –10V

V

SS

VDD = +15V

= –15V

V

SS

15

1050–5

Figure 1. RON as a Function of VD (VS): Dual Supply Voltage

50

VDD = +15V

= –15V

V

SS

= +5V

V

L

40

30

– V

ON

R

20

10

+1258C

+858C

+258C

Figure 4. RON as a Function of VD (VS): Single Supply
Voltage

Figure 2. RON as a Function of VD (VS) for Different
Temperatures

Figure 3. Leakage Currents as a Function of VS (VD)

REV. A –5–

0

–15

0.02

0.01

0.00

–0.01

LEAKAGE CURRENT – nA

–0.02

–0.03

–15

–10

VDD = +15V

= –15V

V

SS

= +258C

T

A

(OFF)

I

S

–10

VS, VD – Volts

VS, VD – Volts

1050–5

15

Figure 5. RON as a Function of VD (VS) for Different
Temperatures

(ON)

I

D

ID (OFF)

1050–5

15

Figure 6. Leakage Currents as a Function of VS (VD)

ADG417

0

50

100

150

200

250

300

5

79

11

13 15

SUPPLY VOLTAGE – Volts

t – ns

V = +5V

IN

t

ON

– SINGLE SUPPLY

t

ON

– DUAL SUPPLY

t

OFF

– DUAL SUPPLY

t

OFF

– SINGLE SUPPLY

10mA

1mA

100mA

10mA

SUPPLY

1mA

I

100nA

10nA

VDD = +15V

= –15V

V

SS

= +5V

V

L

I+, I–

I

L

1nA

2

10

3

10

4

10

FREQUENCY – Hz

5

10

6

10

7

10

Figure 7. Supply Current vs. Input Switching Frequency

Figure 8. Switching Time vs. Power Supply

REV. A–6–

Test Circuits

I

DS

SD

V

S

RON = V1/I

DS

V1

ADG417

Test Circuit 1. On Resistance

0.1mF 0.1mF

S2

V

S

IN

GND

0.1mF 0.1mF

R

L

S2

V

S

IN

V

DDVL

V

DD

0.1mF

V

DDVL

V

DD

IS (OFF) ID (OFF)

V

S

Test Circuit 2. Off Leakage

V

L

D

R

L

300V

V

SS

V

SS

C

L

35pF

SD

V

OUT

V

D

Test Circuit 3. On Leakage

3V

V

IN

V

OUT

50% 50%

90%

t

ON

V

S

90%

t

OFF

SD

ID (ON)

V

D

Test Circuit 4. Switching Times

3V

V

L

D

C

L

10nF

V

OUT

V

IN

V

OUT

Q

= CL 3 DV

INJ

OUT

DV

OUT

V

GND

SS

0.1mF
V

SS

Test Circuit 5. Charge Injection

V

V

L

DD

0.1mF 0.1mF

V

V

L

DD

S

IN

V

S

GND

V

IN

0.1mF

D

V

SS

V

SS

R
50V

V

OUT

L

Test Circuit 6. Off Isolation

REV. A –7–

ADG417

PIN 1

0.210 (5.33)
MAX

0.160 (4.06)

0.115 (2.93)

0.022 (0.558)

0.014 (0.356)

0.1574 (4.00)

0.1497 (3.80)

OUTLINE DIMENSIONS

Dimensions shown in inches and (mm).

8-Lead Plastic DIP (N-8)

0.430 (10.92)

0.348 (8.84)

8

0.100 (2.54)

1

BSC

5

0.280 (7.11)

0.240 (6.10)

4

0.060 (1.52)

0.015 (0.38)

0.070 (1.77)

0.045 (1.15)

0.130
(3.30)
MIN

SEATING
PLANE

0.325 (8.25)

0.300 (7.62)

0.015 (0.381)

0.008 (0.204)

8-Lead SOIC (SO-8)

(Narrow Body)

0.1 968 (5.00)

0.1 890 (4.80)

85

0.2440 (6.20)

0.2284 (5.80)

41

C1974a–0–9/98

0.195 (4.95)

0.115 (2.93)

PIN 1

0.0098 (0.25)

0.0040 (0.10)
SEATING

PLANE

0.0500 (1.27)
BSC

0.0192 (0.49)

0.0138 (0.35)

0.0688 (1.75)

0.0532 (1.35)

0.0098 (0.25)

0.0075 (0.19)

0.0196 (0.50)

0.0099 (0.25)

88

0.0500 (1.27)

08

0.0160 (0.41)

x 458

PRINTED IN U.S.A.

REV. A–8–