Bidirectional level translation
Operates from 1.15 V to 5.5 V
Low quiescent current < 1 µA
No direction pin
APPLICATIONS
Low voltage ASIC level translation
Smart card readers
Cell phones and cell phone cradles
Portable communication devices
Telecommunications equipment
Network switches and routers
Storage systems (SAN/NAS)
Computing/server applications
GPS
Portable POS systems
Low cost serial interfaces
GENERAL DESCRIPTION
The ADG3308 is a bidirectional logic level translator that contains eight bidirectional channels. It can be used in multivoltage
digital system applications such as data transfer between a low
voltage DSP controller and a higher voltage device. The internal
architecture allows the device to perform bidirectional logic
level translation without an additional signal to set the direction
in which the translation takes place.
The voltage applied to V
the device, while V
operation, V
CCY
must always be less than V
CCA
patible logic signals applied to the A side of the device appear as
-compatible levels on the Y side. Similarly, V
V
CCY
logic levels applied to the Y side of the device appear as V
compatible logic levels on the A side.
sets the logic levels on the A side of
CCA
sets the levels on the Y side. For proper
CCY
. The V
-com-
CCA
-compatible
CCY
CCA
-
Bidirectional Logic Level Translator
ADG3308
FUNCTIONAL BLOCK DIAGRAM
V
CCA
A1
A2
A3
A4
A5Y5
A6Y6
A7
A8
EN
The enable pin (EN) provides three-state operation on both the
A side and the Y side pins. When the EN pin is pulled low, the
terminals on both sides of the device are in the high impedance
state. The EN pin is referred to the V
driven high for normal operation.
The ADG3308 is available in compact 20-lead TSSOP and
20-lead LFCSP packages. It is guaranteed to operate over the
1.15 V to 5.5 V supply voltage range and the extended −40°C to
+85°C temperature range.
PRODUCT HIGHLIGHTS
1. Bidirectional level translation.
2. Fully guaranteed over the 1.15 V to 5.5 V supply range.
3. No direction pin.
GND
Figure 1.
V
CCY
Y1
Y2
Y3
Y4
Y7
Y8
supply voltage and
CCY
04865-001
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable.
However, no responsibility is assumed by Analog Devices for its use, nor for any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication
or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
0.4 V
VA = V
VA = 0 V, IOL = 20 µA, Figure 29 0.4 V
f = 1 MHz, EN = 0, Figure 34 6 pF
VY = 0 V/V
V
0.4 V
VEN = 0 V/V
3 pF
RS = RT = 50 Ω, VA = 0 V/V
V
= 0 V/V
Y
R
P, A-Y
R, A-Y
F, A-Y
MAX, A-Y
SKEW, A-Y
PPSKEW, A-Y
R
P, Y-A
R, Y-A
F, Y-A
MAX, Y-A
SKEW, Y-A
PPSKEW, Y-A
R
P, A-Y
R, A-Y
F, A-Y
MAX, A-Y
SKEW, A-Y
PPSKEW, A-Y
= RT = 50 Ω, CL = 50 pF, Figure 36
S
6 10 ns
2 3.5 ns
2 3.5 ns
50 Mbps
2 4 ns
3 ns
= RT = 50 Ω, CL = 15 pF, Figure 37
S
4 7 ns
1 3 ns
3 7 ns
50 Mbps
2 3.5 ns
2 ns
= RT = 50 Ω, CL = 50 pF, Figure 36
S
8 11 ns
2 5 ns
2 5 ns
50 Mbps
2 4 ns
4 ns
to T
MIN
, IOH = 20 µA, Figure 28 V
CCY
, EN = 0, Figure 30 ±1 µA
CCA
, IOH = 20 µA, Figure 29 V
CCA
, EN = 0, Figure 31 ±1 µA
CCY
, VA = 0 V, Figure 32 ±1
CCY
(Y→A), Figure 35
CCY
, unless otherwise noted.
MAX
(A→Y),
CCA
1 1.8 µs
− 0.3 V
CCA
− 0.4
CCA
− 0.4 V
CCA
− 0.4 V
CCY
− 0.4 V
CCY
− 0.4
CCY
µA
SPECIFICATIONS
V
= 1.65 V to 5.5 V, V
CCY
Table 1.
Parameter Symbol Conditions Min Typ2Max Unit
LOGIC INPUTS/OUTPUTS
A Side
Input High Voltage
V
Input Low Voltage
Output High Voltage V
Output Low Voltage V
Capacitance
Leakage Current I
Y Side
Input Low Voltage
Input High Voltage3 V
Output High Voltage V
Output Low Voltage V
Capacitance3 CY
Leakage Current I
Enable (EN)
Input High Voltage
Input Low Voltage
Leakage Current I
Capacitance
Enable Time
SWITCHING CHARACTERISTICS
3.3 V ± 0.3 V ≤ V
A→Y Level Translation
Propagation Delay t
Rise Time t
Fall Time t
Maximum Data Rate D
Channel-to-Channel Skew t
Part-to-Part Skew t
Y→A Level Translation
Propagation Delay t
Rise Time t
Fall Time t
Maximum Data Rate D
Channel-to-Channel Skew t
Part-to-Part Skew t
1.8 V ± 0.15 V ≤ V
A→Y Translation
Propagation Delay t
Rise Time t
Fall Time t
Maximum Data Rate D
Channel-to-Channel Skew t
Part-to-Part Skew t
3
3
3
CCA
Rev. 0 | Page 3 of 20
Page 4
ADG3308
Parameter Symbol Conditions Min Typ2Max Unit
Y→A Translation
Propagation Delay t
Rise Time t
Fall Time t
Maximum Data Rate D
Channel-to-Channel Skew t
Part-to-Part Skew t
1.15 V to 1.3 V ≤ V
CCA
≤ V
, V
= 3.3 V ± 0.3 V
CCY
CCY
A→Y Translation
Propagation Delay t
Rise Time t
Fall Time t
Maximum Data Rate D
Channel-to-Channel Skew t
Part-to-Part Skew t
Y→A Translation
Propagation Delay t
Rise Time t
Fall Time t
Maximum Data Rate D
Channel-to-Channel Skew t
Part-to-Part Skew t
1.15 V to 1.3 V ≤ V
CCA
≤ V
, V
= 1.8 V ± 0.3 V
CCY
CCY
A→Y Translation
Propagation Delay t
Rise Time t
Fall Time t
Maximum Data Rate D
Channel-to-Channel Skew t
Part-to-Part Skew t
Y→A Translation
Propagation Delay t
Rise Time t
Fall Time t
Maximum Data Rate D
Channel-to-Channel Skew t
Part-to-Part Skew t
2.5 V ± 0.2 V ≤ V
CCA
≤ V
, V
= 3.3 V ± 0.3 V
CCY
CCY
A→Y Translation
Propagation Delay t
Rise Time t
Fall Time t
Maximum Data Rate D
Channel-to-Channel Skew t
Part-to-Part Skew t
Y→A Translation
Propagation Delay t
Rise Time t
Fall Time t
Maximum Data Rate D
Channel-to-Channel Skew t
Part-to-Part Skew t
R
P, Y-A
R, Y-A
F, Y-A
MAX, Y-A
SKEW, Y-A
PPSKEW, Y-A
R
P, A-Y
R, A-Y
F, A-Y
MAX, A-Y
SKEW, A-Y
PPSKEW, A-Y
R
P, Y-A
R, Y-A
F, Y-A
MAX, Y-A
SKEW, Y-A
PPSKEW, Y-A
R
P, A-Y
R, A-Y
F, A-Y
MAX, A-Y
SKEW, A-Y
PPSKEW, A-Y
R
P, Y-A
R, Y-A
F, Y-A
MAX, Y-A
SKEW, Y-A
PPSKEW, Y-A
R
P, A-Y
R, A-Y
F, A-Y
MAX, A-Y
SKEW, A-Y
PPSKEW, A-Y
R
P, Y-A
R, Y-A
F, Y-A
MAX, Y-A
SKEW, Y-A
PPSKEW, Y-A
= RT = 50 Ω, CL = 15 pF, Figure 37
S
5 8 ns
2 3.5 ns
2 3.5 ns
50 Mbps
2 3 ns
3 ns
= RT = 50 Ω, CL = 50 pF, Figure 36
S
9 18 ns
3 5 ns
2 5 ns
40 Mbps
2 5 ns
10 ns
= RT = 50 Ω, CL = 15 pF, Figure 37
S
5 9 ns
2 4 ns
2 4 ns
40 Mbps
2 4 ns
4 ns
= RT = 50 Ω, CL = 50 pF, Figure 36
S
12 25 ns
7 12 ns
3 5 ns
25 Mbps
2 5 ns
15 ns
= RT = 50 Ω, CL = 15 pF, Figure 37
S
14 35 ns
5 16 ns
2.5 6.5 ns
25 Mbps
3 6.5 ns
23.5 ns
= RT = 50 Ω, CL = 50 pF, Figure 36
S
7 10 ns
2.5 4 ns
2 5 ns
60 Mbps
1.5 2 ns
4 ns
= RT = 50 Ω, CL = 15 pF, Figure 37
S
5 8 ns
1 4 ns
3 5 ns
60 Mbps
2 3 ns
3 ns
Rev. 0 | Page 4 of 20
Page 5
ADG3308
Parameter Symbol Conditions Min Typ2Max Unit
POWER REQUIREMENTS
Power Supply Voltages V
V
Quiescent Power Supply Current I
I
Three-State Mode Power Supply Current I
I
1
Temperature range is as follows: B version: −40°C to +85°C.
2
All typical values are at TA = 25°C, unless otherwise noted.
3
Guaranteed by design; not subject to production test.
CCA
CCY
CCA
CCY
HiZA
HiZY
V
≤ V
CCA
CCY
1.65 5.5 V
VA = 0 V/V
= V
V
CCA
VA = 0 V/V
V
= V
CCA
V
= V
CCA
V
= V
CCA
, VY = 0 V/V
CCA
= 5.5 V, EN = V
CCY
, VY = 0 V/V
CCA
= 5.5 V, EN = V
CCY
= 5.5 V, EN = 0 0.1 1 µA
CCY
= 5.5 V, EN = 0 0.1 1 µA
CCY
CCY
CCY
,
CCY
,
CCY
1.15 5.5 V
0.17 1 µA
0.27 1 µA
Rev. 0 | Page 5 of 20
Page 6
ADG3308
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 2.
Parameter Rating
V
to GND −0.3 V to +7 V
CCA
V
to GND V
CCY
Digital Inputs (A) −0.3 V to (V
Digital Inputs (Y) −0.3 V to (V
EN to GND −0.3 V to +7 V
Operating Temperature Range
Industrial (B Version) −40°C to +85°C
Storage Temperature Range −65°C to +150°C
Junction Temperature 150°C
θJA Thermal Impedance
20-Lead TSSOP 78°C/W
20-Lead LFCSP 30.4°C/W
Lead Temperature, Soldering (10 sec) 300°C
IR Reflow, Peak Temperature (< 20 sec) 260°C
to +7 V
CCA
+ 0.3 V)
CCA
+ 0.3 V)
CCY
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability. Only one absolute maximum rating may be
applied at any one time.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
Rev. 0 | Page 6 of 20
Page 7
ADG3308
A
PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS
1
V
CCA
2
A1
3
A2
ADG3308
4
A3
A4
A5
A6
A7
A8
EN
(Not to Scale)
5
6
7
8
9
10
TOP VIEW
20
V
CCY
19
Y1
18
Y2
17
Y3
16
Y4
15
Y5
14
Y6
13
Y7
12
Y8
11
GND
04865-002
Figure 2. 20-Lead TSSOP Figure 3. 20-Lead LFCSP
Table 3. Pin Function Descriptions
Pin. No.
TSSOP LFCSP Mnemonic Description
1 19 V
2 20 A1
Power Supply Voltage Input for the A1 to A8 I/O Pins (1.15 V ≤ V
CCA
Input/Output A1. Referenced to V
3 1 A2 Input/Output A2. Referenced to V
4 2 A3 Input/Output A3. Referenced to V
5 3 A4 Input/Output A4. Referenced to V
6 4 A5 Input/Output A5. Referenced to V
7 5 A6 Input/Output A6. Referenced to V
8 6 A7 Input/Output A7. Referenced to V
9 7 A8 Input/Output A8. Referenced to V
10 8 EN Active High Enable Input.
11 9 GND Ground.
12 10 Y8 Input/Output Y8. Referenced to V
13 11 Y7 Input/Output Y7. Referenced to V
14 12 Y6 Input/Output Y6. Referenced to V
15 13 Y5 Input/Output Y5. Referenced to V
16 14 Y4 Input/Output Y4. Referenced to V
17 15 Y3 Input/Output Y3. Referenced to V
18 16 Y2 Input/Output Y2. Referenced to V
19 17 Y1
20 18 V
Power Supply Voltage Input for the Y1 to Y8 I/O Pins (1.65 V ≤ V
CCY
Input/Output Y1. Referenced to V
Y
C
C
1A2
2A3
3A4
4A5
5A6
1
A
0
2
ADG3308
TOP VIEW
(Not to Scale)
6
7
A
1
C
C
V
V
Y
7
9
8
1
1
1
PIN 1
INDICATOR
9
8
7
8
N
D
A
E
N
G
2
Y
6
1
15 Y3
14 Y4
13 Y5
12 Y6
11 Y7
0
1
8
Y
04865-003
The exposed pad can be tied to GND or it can be left floating.
or V
CCA
CCY
.
CCY
).
CCA
CCA
CCA
CCA
CCA
CCA
CCA
CCA
CCY
CCY
CCY
CCY
CCY
CCY
CCY
CCY
Do not tie it to V
< V
CCA
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
≤ 5.5 V).
CCY
Rev. 0 | Page 7 of 20
Page 8
ADG3308
TYPICAL PERFORMANCE CHARACTERISTICS
1.0
TA = 25°C
1 CHANNEL
0.9
= 50pF
C
L
0.8
0.7
0.6
(mA)
0.5
CCA
I
0.4
0.3
0.2
0.1
0
05101520253035404550
Figure 4. I
10
TA = 25°C
1 CHANNEL
9
= 50pF
C
L
8
7
6
(mA)
5
CCY
I
4
3
2
1
0
05101520253035404550
Figure 5. I
3.0
TA = 25°C
1 CHANNEL
C
= 15pF
L
2.5
2.0
(mA)
1.5
CCA
I
1.0
0.5
0
05101520253035404550
Figure 6. I
V
= 3.3V, V
CCA
V
CCA
DATA RATE (Mbps)
vs. Data Rate (A→Y Level Translation)
CCA
CCY
V
CCA
= 1.2V, V
= 5V
= 1.8V, V
= 1.8V
CCY
CCY
V
= 3.3V, V
CCA
V
DATA RATE (Mbps)
vs. Data Rate (A→Y Level Translation)
CCY
CCA
= 5V
CCY
V
= 1.2V, V
CCA
= 1.8V, V
= 1.8V
CCY
V
= 3.3V, V
CCA
V
CCA
DATA RATE (Mbps)
vs. Data Rate (Y→A Level Translation)
CCA
CCY
V
CCA
= 1.2V, V
= 5V
= 1.8V, V
CCY
= 1.8V
CCY
CCY
= 3.3V
= 3.3V
= 3.3V
04865-004
04865-005
04865-006
3.0
TA = 25°C
1 CHANNEL
C
= 15pF
L
2.5
2.0
V
= 3.3V, V
CCA
(mA)
1.5
CCY
I
1.0
0.5
0
05101520253035404550
Figure 7. I
vs. Data Rate (Y→A Level Translation)
CCY
V
DATA RATE (Mbps)
CCA
CCY
V
CCA
= 1.2V, V
= 5V
= 1.8V, V
CCY
= 1.8V
1.6
TA =25°C
1 CHANNEL
1.4
V
= 1.2V
CCA
= 1.8V
V
CCY
1.2
1.0
(mA)
0.8
CCY
I
0.6
0.4
0.2
0
13233343536373
CAPACITIVE LOAD (pF)
Figure 8. I
vs. Capacitive Load at Pin Y for A→Y (1.2 V→1.8 V)
CCY
20Mbps
10Mbps
5Mbps
1Mbps
Level Translation
1.0
TA = 25°C
1 CHANNEL
0.9
V
= 1.2V
CCA
V
=1.8V
CCY
0.8
0.7
0.6
(mA)
0.5
CCA
I
0.4
0.3
0.2
0.1
0
1323334353
Figure 9. I
vs. Capacitive Load at Pin A for Y→A (1.8 V→1.2 V)
CCA
CAPACITIVE LOAD (pF)
20Mbps
10Mbps
5Mbps
1Mbps
Level Translation
CCY
= 3.3V
04865-007
04865-012
04865-013
Rev. 0 | Page 8 of 20
Page 9
ADG3308
9
TA = 25°C
1 CHANNEL
8
V
= 1.8V
CCA
V
= 3.3V
CCY
7
6
5
(mA)
4
CCY
I
3
2
1
0
13233343536373
Figure 10. I
CAPACITIVE LOAD (pF)
vs. Capacitive Load at Pin Y for A→Y (1.8 V→3.3 V)
CCY
50Mbps
30Mbps
20Mbps
10Mbps
5Mbps
Level Translation
5.0
TA = 25°C
1 CHANNEL
4.5
4.0
3.5
3.0
2.5
(mA)
CCA
I
2.0
1.5
1.0
0.5
Figure 11. I
= 1.8V
V
CCA
= 3.3V
V
CCY
0
1323334353
CCA
CAPACITIVE LOAD (pF)
vs. Capacitive Load at Pin A for Y→A (3.3 V→1.8 V)
Level Translation
12
TA = 25°C
1 CHANNEL
V
= 3.3V
CCA
10
= 5V
V
CCY
8
6
(mA)
CCY
I
4
2
0
13233343536373
Figure 12. I
CCY
CAPACITIVE LOAD (pF)
vs. Capacitive Load at Pin Y for A→Y (3.3 V→5 V)
Level Translation
50Mbps
30Mbps
20Mbps
10Mbps
5Mbps
50Mbps
30Mbps
20Mbps
10Mbps
5Mbps
04865-016
04865-017
04865-020
7
TA = 25°C
1 CHANNEL
= 3.3V
V
6
CCA
= 5V
V
CCY
5
4
(mA)
3
CCA
I
2
1
0
1323334353
Figure 13. I
CCA
CAPACITIVE LOAD (pF)
vs. Capacitive Load at Pin A for Y→A (5 V→3.3 V)
50Mbps
30Mbps
20Mbps
10Mbps
5Mbps
04865-021
Level Translation
10
TA = 25°C
1 CHANNEL
9
DATA RATE = 50kbps
8
7
6
5
4
RISE TIME(ns)
3
2
1
0
13233343536373
V
= 1.2V, V
CCA
V
= 1.8V, V
CCA
V
= 3.3V, V
CCA
CAPACITIVE LOAD (pF)
CCY
= 1.8V
CCY
CCY
= 3.3V
= 5V
04865-023
Figure 14. Rise Time vs. Capacitive Load at Pin Y (A→Y Level Translation)
4.0
TA = 25°C
1 CHANNEL
3.5
DATA RATE = 50kbps
3.0
2.5
2.0
1.5
FALL TIME (ns)
1.0
0.5
0
13233343536373
V
= 1.2V, V
CCA
V
CCA
V
CCA
CAPACITIVE LOAD (pF)
= 1.8V
CCY
= 1.8V, V
= 3.3V, V
CCY
CCY
= 3.3V
= 5V
04865-024
Figure 15. Fall Time vs. Capacitive Load at Pin Y (A→Y Level Translation)
Rev. 0 | Page 9 of 20
Page 10
ADG3308
10
TA = 25°C
1 CHANNEL
9
DATA RATE = 50kbps
8
7
6
5
4
RISE TIME (ns)
3
2
1
0
131823283338434853
Figure 16. Rise Time vs. Capacitive Load at Pin A ( Y→A Level Translation)
4.0
3.5
3.0
2.5
2.0
1.5
FALL TIME (ns)
1.0
0.5
0
131823283338434853
Figure 17. Fall Time vs. Capacitive Load at Pin A (Y→A Level Translation)
14
12
10
8
6
4
PROPAGATION DELAY (ns)
2
0
132333435363
V
CCA
= 1.2V, V
= 1.8V
CCY
V
= 1.8V, V
CCA
V
CCA
CAPACITIVE LOAD (pF)
= 3.3V, V
TA = 25°C
1 CHANNEL
DATA RATE = 50kbps
V
CCA
= 1.2V, V
= 1.8V
CCY
CAPACITIVE LOAD (pF)
V
CCA
= 1.8V, V
V
CCA
= 3.3V, V
TA = 25°C
1 CHANNEL
DATA RATE = 50kbps
V
CCA
CAPACITIVE LOAD (pF)
Figure 18. Propagation Delay (t
= 1.8V, V
CCY
V
V
CCA
CCA
= 1.2V, V
= 3.3V
= 3.3V, V
) vs.
PLH
Capacitive Load at Pin Y (A→Y Level Translation)
CCY
CCY
CCY
CCY
= 3.3V
CCY
= 3.3V
CCY
= 1.8V
= 5V
= 5V
= 5V
73
04865-025
04865-026
04865-027
12
DATA RATE = 50kbps
A
= 25°C
T
1 CHANNEL
10
8
6
4
PROPAGATION DELAY (ns)
2
0
13233343536373
CAPACITIVE LOAD (pF)
Figure 19. Propagation Delay (t
V
CCA
V
= 1.2V, V
CCA
V
CCA
= 1.8V, V
= 3.3V, V
) vs.
PHL
CCY
Capacitive Load at Pin Y (A→Y Level Translation)
9
TA = 25°C
1 CHANNEL
8
DATA RATE = 50kbps
7
6
5
4
3
V
= 1.8V, V
PROPAGATION DELAY (ns)
CCA
2
1
0
131823283338434853
= 3.3V
CCY
CAPACITIVE LOAD (pF)
Figure 20. Propagation Delay (t
V
V
CCA
CCA
= 1.2V, V
= 3.3V, V
PLH
CCY
CCY
) vs.
Capacitive Load at Pin A (Y→A Level Translation)
9
TA = 25°C
1 CHANNEL
8
DATA RATE = 50kbps
7
6
5
4
V
3
PROPAGATION DELAY (ns)
2
1
0
131823283338434853
CCA
CAPACITIVE LOAD (pF)
Figure 21. Propagation Delay (t
= 1.8V, V
V
CCA
V
CCA
= 3.3V
CCY
= 3.3V, V
= 1.2V, V
= 5V
CCY
PHL
CCY
) vs.
Capacitive Load at Pin A (Y→A Level Translation)
= 1.8V
CCY
CCY
= 1.8V
= 5V
= 1.8V
= 3.3V
= 5V
04865-028
04865-029
04865-030
Rev. 0 | Page 10 of 20
Page 11
ADG3308
TA = 25°C
DATA RATE = 25Mbps
= 50pF
C
L
1 CHANNEL
TA = 25°C
DATA RATE = 50Mbps
= 15pF
C
L
1 CHANNEL
400mV/DIV
5ns/DIV
04860-037
Figure 22. Eye Diagram at Y Output (1.2 V to 1.8 V Level Translation, 25 Mbps)
200mV/DIV
TA = 25°C
DATA RATE = 25Mbps
5ns/DIV
= 50pF
C
L
1 CHANNEL
04860-038
Figure 23. Eye Diagram at A Output (1.8 V to 1.2 V Level Translation, 25 Mbps)
TA = 25°C
DATA RATE = 50Mbps
= 50pF
C
L
1 CHANNEL
400mV/DIV
3ns/DIV
04860-040
Figure 25. Eye Diagram at A Output (3.3 V to 1.8 V Level Translation, 50 Mbps)
TA = 25°C
DATA RATE = 50Mbps
CL = 50pF
1 CHANNEL
1V/DIV
3ns/DIV
04860-041
Figure 26. Eye Diagram at Y Output (3.3 V to 5 V Level Translation, 50 Mbps)
TA = 25°C
DATA RATE = 50Mbps
C
= 15pF
L
1 CHANNEL
500mV/DIV
3ns/DIV
04860-039
Figure 24. Eye Diagram at Y Output (1.8 V to 3.3 V Level Translation, 50 Mbps)
Rev. 0 | Page 11 of 20
800mV/DIV
3ns/DIV
04860-042
Figure 27. Eye Diagram at A Output (5 V to 3.3 V Level Translation, 50 Mbps)
Logic input high voltage at Pins A1 to A8.
Logic input low voltage at Pins A1 to A8.
Logic output high voltage at Pins A1 to A8.
Logic output low voltage at Pins A1 to A8.
Capacitance measured at Pins A1 to A8 (EN = 0).
Leakage current at Pins A1 to A8 when EN = 0 (high impedance state at Pins A1 to A8).
Logic input high voltage at Pins Y1 to Y8.
Logic input low voltage at Pins Y1 to Y8.
Logic output high voltage at Pins Y1 to Y8.
Logic output low voltage at Pins Y1 to Y8.
Capacitance measured at Pins Y1 to Y8 (EN = 0).
Leakage current at Pins Y1 to Y8 when EN = 0 (high impedance state at Pins Y1 to Y8).
Logic input high voltage at the EN pin.
Logic input low voltage at the EN pin.
Capacitance measured at EN pin.
Enable (EN) pin leakage current.
Three-state enable time for Pins A1 to A8 /Y1 to Y8.
Propagation delay when translating logic levels in the A→Y direction.
Rise time when translating logic levels in the A→Y direction.
Fall time when translating logic levels in the A→Y direction.
Guaranteed data rate when translating logic levels in the A→Y direction under the driving and loading conditions
specified in Table 1.
Difference between propagation delays on any two channels when translating logic levels in the A→Y direction.
Difference in propagation delay between any one channel and the same channel on a different part (under same
driving/loading conditions) when translating in the A
→Y direction.
Propagation delay when translating logic levels in the Y→A direction.
Rise time when translating logic levels in the Y→A direction.
Fall time when translating logic levels in the Y→A direction.
Guaranteed data rate when translating logic levels in the Y→A direction under the driving and loading conditions
specified in Table 1.
Difference between propagation delays on any two channels when translating logic levels in the Y→A direction.
Difference in propagation delay between any one channel and the same channel on a different part (under same
driving/loading conditions) when translating in the Y
V
supply voltage.
CCA
V
supply voltage.
CCY
V
supply current.
CCA
V
supply current.
CCY
V
supply current during three-state mode (EN = 0).
CCA
V
supply current during three-state mode (EN = 0).
CCY
→A direction.
Rev. 0 | Page 15 of 20
Page 16
ADG3308
THEORY OF OPERATION
The ADG3308 level translator allows the level shifting
necessary for data transfer in a system where multiple supply
CCY
and
CCA
-
CCY
T2T1
Y
T3T4
04865-053
voltages are used. The device requires two supplies, V
(V
≤ V
V
CCY
CCA
). These supplies set the logic levels on each
CCY
side of the device. When driving the A pins, the device translates
the V
-compatible logic levels to V
CCA
-compatible logic levels
CCY
available at the Y pins. Similarly, since the device is capable of
bidirectional translation, when driving the Y pins the V
compatible logic levels are translated to the V
-compatible
CCA
logic levels available at the A pins. When EN = 0, the A1 to A8
and Y1 to Y8 pins are three-stated. When EN is driven high, the
ADG3308 goes into normal operation mode and performs level
translation.
LEVEL TRANSLATOR ARCHITECTURE
The ADG3308 consists of eight bidirectional channels. Each
channel can translate logic levels in either the A→Y or the Y→A
direction. It uses a one-shot accelerator architecture, which
ensures excellent switching characteristics Figure 38 shows a
simplified block diagram of a bidirectional channel.
V
CCA
6kΩ
U2
U1
P
A
Figure 38. Simplified Block Diagram of an ADG3308 Channel
ONE-SHOT GENERATOR
U4
6kΩ
U3
The logic level translation in the A→Y direction is performed
using a level translator (U1) and an inverter (U2), while the
translation in the Y
→A direction is performed using the inverters
U3 and U4. The one-shot generator detects a rising or falling
edge present on either the A side or the Y side of the channel. It
sends a short pulse that turns on the PMOS transistors (T1–T2)
for a rising edge, or the NMOS transistors (T3–T4) for a falling
edge. This charges/discharges the capacitive load faster, which
results in fast rise and fall times.
V
N
INPUT DRIVING REQUIREMENTS
To ensure correct operation of the ADG3308, the circuit that
drives the input of the ADG3308 channels should have an
output impedance of less than or equal to 150 Ω and a
minimum current driving capability of 36 mA.
OUTPUT LOAD REQUIREMENTS
The ADG3308 level translator is designed to drive CMOScompatible loads. If current-driving capability is required, it is
recommended to use buffers between the ADG3308 outputs
and the load.
ENABLE OPERATION
The ADG3308 provides three-state operation at the A and Y
I/O pins by using the enable (EN) pin, as shown in Table 5.
Table 5. Truth Table
EN
0 Hi-Z
1 Normal operation2Normal operation
1
High impedance state.
2
In normal operation, the ADG3308 performs level translation.
Y I/O Pins A I/O Pins
1
Hi-Z
1
2
While EN = 0, the ADG3308 enters into three-state mode. In
this mode the current consumption from both the V
supplies is reduced, allowing the user to save power, which
V
CCY
CCA
and
is critical, especially on battery-operated systems. The EN input
pin can be driven with V
-compatible logic levels only.
CCY
POWER SUPPLIES
For proper operation of the ADG3308, the voltage applied to
the V
V
sequence is V
properly only after both supply voltages reach their nominal
values. It is not recommended to use the part in a system where,
during power-up, V
significant increase in the current taken from the V
For optimum performance, the V
decoupled to GND as close as possible to the device.
must be always less than or equal the voltage applied to
CCA
. To meet this condition, the recommended power-up
CCY
first and then V
CCY
might be greater than V
CCA
. The ADG3308 operates
CCA
due to a
CCY
CCA
and V
pins should be
CCY
supply.
CCA
The inputs of the unused channels (A or Y) should be tied to
their corresponding V
rail (V
CC
CCA
or V
) or to GND.
CCY
Rev. 0 | Page 16 of 20
Page 17
ADG3308
DATA RATE
The maximum data rate at which the device is guaranteed to
operate is a function of the V
CCA
and V
combination and the load capacitance. It is given by the
maximum frequency of a square wave that can be applied to the
device, which meets the V
and VOL levels at the output and
OH
does not exceed the maximum junction temperature (see the
Absolute Maximum Ratings section). Table 6 shows the
guaranteed data rates at which the ADG3308 can operate in
both directions (A
and V
supply combinations.
CCY
→Y or Y→A level translation) for various V
Table 6. Guaranteed Data Rate (Mbps)
V
CCA
1.2 V (1.15 V to 1.3 V)
1.8 V (1.65 V to 1.95 V)
2.5 V (2.3 V to 2.7 V)
3.3 V (3.0 V to 3.6 V)
5 V (4.5 V to 5.5 V)
1
The load capacitance used is 50 pF when translating in the A→Y direction and 15 pF when translating in the Y→A direction.
supply voltage
CCY
1
1.8 V
(1.65 V to 1.95 V)
25 30 40 40
- 45 50 50
- - 60 50
- - - 50
- - - -
CCA
2.5 V
(2.3 V to 2.7 V)
V
CCY
3.3 V
(3.0 V to 3.6 V)
5 V
(4.5 V to 5.5 V)
Rev. 0 | Page 17 of 20
Page 18
ADG3308
APPLICATIONS
The ADG3308 is designed for digital circuits that operate at
different supply voltages; therefore, logic level translation is
required. The lower voltage logic signals are connected to the
A pins, and the higher voltage logic signals to the Y pins. The
ADG3308 can provide level translation in both directions from
→Y or Y→A on all eight channels, eliminating the need for a
A
level translator IC for each direction. The internal architecture
allows the ADG3308 to perform bidirectional level translation
without an additional signal to set the direction in which the
translation is made. It also allows simultaneous data flow in
both directions on the same part, for example, when two
channels translate in A→Y direction while the other two
translate in Y→A direction. This simplifies the design by
eliminating the timing requirements for the direction signal
and reduces the number of ICs used for level translation.
Figure 39 shows an application where a 3.3 V microprocessor
can read or write data to and from a 1.8 V peripheral device
using an 8-bit bus.
100nF
V
3.3V
MICROPROCESSOR/
MICROCONTROLLER/
DSP
GND
I/OH1
I/O
I/O
I/OH4
I/OH5
I/O
I/OH7
I/OH8
2
H
3
H
6
H
CCY
Y1
Y2
Y3
Y4
ADG3308
Y5
Y6
Y7
ENGND
Figure 39. 1.8 V to 3.3 V 8-Bit Level Translation Circuit
When the application requires level translation between a
microprocessor and multiple peripheral devices, the ADG3308
I/O pins can be three-stated by setting EN = 0. This feature
100nF
V
CCA
A1
A2
A3
A4
A5
A6
A7
A8Y8
I/OL1
I/O
I/O
I/O
I/O
I/O
I/O
I/O
GND
2
L
3
L
4
L
PERIPHERAL
5
L
6
L
7
L
8
L
1.8V
DEVICE
allows the ADG3308 to share the data buses with other devices
without causing contention issues. Figure 40 shows an application
where a 3.3 V microprocessor is connected to 1.8 V peripheral
devices using the three-state feature.
100nF100nF
V
V
CCY
ADG3308
CCY
ADG3308
V
GND
CCA
A1
A2
A3
A4
A5
A6
A7
A8
CCA
A1
A2
A3
A4
A5
A6
A7
A8
I/OL1
I/O
I/O
I/O
I/O
I/O
I/O
I/O
GND
I/OL1
I/O
I/O
I/O
I/O
I/O
I/O
I/O
GND
2
L
3
L
4
L
5
L
6
L
7
L
8
L
2
L
3
L
4
L
5
L
6
L
7
L
8
L
1.8V
PERIPHERAL
DEVICE 1
1.8V
PERIPHERAL
DEVICE 2
04860-055
3.3V
MICROPROCESSOR/
MICROCONTROLLER/
DSP
GND
CS
1
I/O
H
I/OH2
I/O
3
H
I/O
4
H
I/O
5
H
6
I/O
H
7
I/O
H
8
I/O
H
100nF100nF
Y1
Y2
Y3
Y4
Y5
Y6
Y7
Y8
ENGND
V
Y1
Y2
Y3
Y4
Y5
Y6
Y7
Y8
EN
Figure 40. 1.8 V to 3.3 V Level Translation Circuit
Using the Three-State Feature
LAYOUT GUIDELINES
As with any high speed digital IC, the printed circuit board
layout is important in the circuit overall performance. Care
should be taken to ensure proper power supply bypass and
return paths for the high speed signals. Each V
) should be bypassed using low effective series resistance
V
CCY
pin (V
CC
(ESR) and effective series inductance (ESI) capacitors placed as
04860-055
close as possible to the V
CCA
and V
pins. The parasitic induc-
CCY
tance of the high speed signal track might cause significant
overshoot. This effect can be reduced by keeping the length of
the tracks as short as possible. A solid copper plane for the
return path (GND) is also recommended.
CCA
and
Rev. 0 | Page 18 of 20
Page 19
ADG3308
OUTLINE DIMENSIONS
6.60
6.50
6.40
0.60
MAX
0.60
MAX
0.75
0.55
0.35
COPLANARITY
0.08
16
15
11
10
EXPOSED
(BOTTOM VIEW)
PIN 1
INDICATOR
20
PAD
5
6
0.30
0.23
0.18
1
2.25
2.10 SQ
1.95
0.25 MIN
PIN 1
0.15
0.05
COPLANARITY
0.10
20
1
0.65
BSC
0.30
0.19
COMPLIANT TO JEDEC STANDARDS MO-153AC
1.20 MAX
11
10
SEATING
PLANE
4.50
4.40
4.30
6.40 BSC
0.20
0.09
Figure 41. 20-Lead Thin Shrink Small Outline Package [TSSOP]
(RU-20)
Dimensions shown in millimeters
4.00
BSC SQ
PIN 1
INDICATOR
1.00
8°
0°
0.75
0.60
0.45
0.85
0.80
SEATING
PLANE
TOP
VIEW
12° MAX
0.80 MAX
0.65 TYP
0.50
BSC
COMPLIANT TO JEDEC STANDARDS MO-220-VGGD-1
0.20
REF
3.75
BCS SQ
0.05 MAX
0.02 NOM
Figure 42. 20-Lead Lead Frame Chip Scale Package [LFCSP]
(CP-20)
Dimensions shown in millimeters
ORDERING GUIDE
Model Temperature Range Package Description Package Option