0.2 Ω on resistance flatness
±3.3 V to ±8 V dual-supply operation
3.3 V to 16 V single-supply operation
No V
supply required
L
3 V logic-compatible inputs
Rail-to-rail operation
Continuous current per channel
LFCSP package: 504 mA
TSSOP package: 315 mA
14-lead TSSOP and 16-lead, 4 mm × 4 mm LFCSP
APPLICATIONS
Communication systems
Medical systems
Audio signal routing
Video signal routing
Automatic test equipment
Data acquisition systems
Battery-powered systems
Sample-and-hold systems
Relay replacements
+12 V, +5 V, and +3.3 V, 4:1 Multiplexer
ADG1604
FUNCTIONAL BLOCK DIAGRAM
S1
S2
S3
S4
ADG1604
1 OF 4
DECODER
Figure 1.
D
ENA1A0
07982-001
GENERAL DESCRIPTION
The ADG1604 is a complementary metal-oxide semiconductor
(CMOS) analog multiplexer and switches one of four inputs to
a common output, D, as determined by the 3-bit binary address
lines, A0, A1, and EN. Logic 0 on the EN pin disables the device.
Each switch conducts equally well in both directions when on
and has an input signal range that extends to the supplies. In
the off condition, signal levels up to the supplies are blocked.
All switches exhibit break-before-make switching action.
Inherent in the design is low charge injection for minimum
transients when switching the digital inputs.
The ultralow on resistance of these switches make them ideal
solutions for data acquisition and gain switching applications where
low on resistance and distortion is critical. The on resistance profile
is very flat over the full analog input range, ensuring excellent
linearity and low distortion when switching audio signals.
Rev. A
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
The CMOS construction ensures ultralow power dissipation,
making the parts ideally suited for portable and batterypowered instruments.
VDD = +5 V ± 10%, VSS = −5 V ± 10%, GND = 0 V, unless otherwise noted.
Table 1.
−40°C to
Parameter 25°C
+85°C
ANALOG SWITCH
Analog Signal Range VDD to VSS V
On Resistance (RON) 1 Ω typ VS = ±4.5 V, IS = −10 mA; see Figure 22
1.2 1.4 1.6 Ω max VDD = ±4.5 V, VSS = ±4.5 V
On Resistance Match Between Channels (∆RON) 0.04 Ω typ VS = ±4.5 V, IS = −10 mA
0.08 0.09 0.1 Ω max
On Resistance Flatness (R
) 0.2 Ω typ VS = ±4.5 V, IS = −10 mA
FLAT(ON)
0.25 0.29 0.34 Ω max
LEAKAGE CURRENTS VDD = +5.5 V, VSS = −5.5 V
Source Off Leakage, IS (Off) ±0.1 nA typ
±0.2 ±1 ±8 nA max
Drain Off Leakage, ID (Off) ±0.1 nA typ
±0.2 ±2 ±16 nA max
Channel On Leakage, ID, IS (On) ±0.2 nA typ VS = VD = ±4.5 V; see Figure 24
±0.4 ±2 ±16 nA max
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
Input Current, I
INL
2.0 V min
INH
0.8 V max
INL
or I
0.005 μA typ VIN = V
INH
±0.1 μA max
Digital Input Capacitance, CIN 8 pF typ
DYNAMIC CHARACTERISTICS1
Transition Time, t
150 ns typ RL = 300 Ω, CL = 35 pF
TRANSITION
278 336 376 ns max VS = 2.5 V; see Figure 29
tON (EN) 116 ns typ RL = 300 Ω, CL = 35 pF
146 166 177 ns max VS = 2.5 V; see Figure 31
t
(EN) 186 ns typ RL = 300 Ω, CL = 35 pF
OFF
234 277 310 ns max VS = 2.5 V; see Figure 31
Break-Before-Make Time Delay, tD 50 ns typ RL = 300 Ω, CL = 35 pF
28.5 ns min VS1 = VS2 = 2.5 V; see Figure 30
Charge Injection 140 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF; see Figure 32
Off Isolation 70 dB typ
Channel-to-Channel Crosstalk 70 dB typ
Total Harmonic Distortion + Noise (THD + N) 0.007 % typ
−3 dB Bandwidth 15 MHz typ RL = 50 Ω, CL = 5 pF; see Figure 26
CS (Off) 63 pF typ VS = 0 V, f = 1 MHz
CD (Off) 270 pF typ VS = 0 V, f = 1 MHz
CD, CS (On) 360 pF typ VS = 0 V, f = 1 MHz
POWER REQUIREMENTS VDD = +5.5 V, VSS = −5.5 V
IDD 0.001 μA typ Digital inputs = 0 V or VDD
1.0 μA max
VDD/VSS ±3.3/±8 V min/max
1
Guaranteed by design, not subject to production test.
Analog Signal Range 0 V to VDD V
On Resistance (RON) 0.95 Ω typ VS = 0 V to 10 V, IS = −10 mA; see Figure 22
1.1 1.25 1.45 Ω max VDD = 10.8 V, VSS = 0 V
On Resistance Match Between Channels (∆RON) 0.03 Ω typ VS = 10 V, IS = −10 mA
0.06 0.07 0.08 Ω max
On Resistance Flatness (R
) 0.2 Ω typ VS = 0 V to 10 V, IS = −10 mA
FLAT(ON)
0.23 0.27 0.32 Ω max
LEAKAGE CURRENTS VDD = 13.2 V, VSS = 0 V
Source Off Leakage, IS (Off) ±0.1 nA typ VS = 1 V/10 V, VD = 10 V/1 V; see Figure 23
±0.2 ±1 ±8 nA max
Drain Off Leakage, ID (Off) ±0.1 nA typ VS = 1 V/10 V, VD = 10 V/1 V; see Figure 23
±0.2 ±2 ±16 nA max
Channel On Leakage, ID, IS (On) ±0.2 nA typ VS = VD = 1 V or 10 V; see Figure 24
±0.4 ±2 ±16 nA max
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
Input Current, I
INL
2.0 V min
INH
0.8 V max
INL
or I
0.001 μA typ VIN = V
INH
±0.1 μA max
Digital Input Capacitance, CIN 8 pF typ
DYNAMIC CHARACTERISTICS1
Transition Time, t
100 ns typ RL = 300 Ω, CL = 35 pF
TRANSITION
161 192 220 ns max VS = 8 V; see Figure 29
tON (EN) 80 ns typ RL = 300 Ω, CL = 35 pF
95 104 111 ns max VS = 8 V; see Figure 31
t
(EN) 144 ns typ RL = 300 Ω, CL = 35 pF
OFF
173 205 234 ns max VS = 8 V; see Figure 31
Break-Before-Make Time Delay, tD 25 ns typ RL = 300 Ω, CL = 35 pF
18 ns min VS1 = VS2 = 8 V; see Figure 30
Charge Injection 125 pC typ VS = 6 V, RS = 0 Ω, CL = 1 nF; see Figure 32
Off Isolation 70 dB typ
Channel-to-Channel Crosstalk 70 dB typ
Total Harmonic Distortion + Noise 0.013 % typ
−3 dB Bandwidth 19 MHz typ RL = 50 Ω, CL = 5 pF; see Figure 26
CS (Off) 60 pF typ VS = 6 V, f = 1 MHz
CD (Off) 270 pF typ VS = 6 V, f = 1 MHz
CD, CS (On) 350 pF typ VS = 6 V, f = 1 MHz
POWER REQUIREMENTS VDD = 12 V
IDD 0.001 μA typ Digital inputs = 0 V or VDD
1 μA max
IDD 230 μA typ Digital inputs = 5 V
360 μA max
VDD 3.3/16 V min/max
1
Guaranteed by design, not subject to production test.
Analog Signal Range 0 V to VDD V
On Resistance (RON) 1.7 Ω typ VS = 0 V to 4.5 V, IS = −10 mA; see Figure 22
2.15 2.4 2.7 Ω max VDD = 4.5 V, VSS = 0 V
On Resistance Match Between Channels (∆RON) 0.05 Ω typ VS = 0 V to 4.5 V, IS = −10 mA
0.09 0.12 0.15 Ω max
On Resistance Flatness (R
) 0.4 Ω typ VS = 0 V to 4.5 V, IS = −10 mA
FLAT(ON)
0.53 0.55 0.6 Ω max
LEAKAGE CURRENTS VDD = 5.5 V, VSS = 0 V
Source Off Leakage, IS (Off) ±0.05 nA typ VS = 1 V/4.5 V, VD = 4.5 V/1 V; see Figure 23
±0.2 ±1 ±8 nA max
Drain Off Leakage, ID (Off) ±0.05 nA typ VS = 1 V/4.5 V, VD = 4.5 V/1 V; see Figure 23
±0.2 ±2 ±16 nA max
Channel On Leakage, ID, IS (On) ±0.1 nA typ VS = VD = 1 V or 4.5 V; see Figure 24
±0.4 ±2 ±16 nA max
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
Input Current, I
INL
2.0 V min
INH
0.8 V max
INL
or I
0.001 μA typ VIN = V
INH
±0.1 μA max
Digital Input Capacitance, CIN 8 pF typ
DYNAMIC CHARACTERISTICS1
Transition Time, t
175 ns typ RL = 300 Ω, CL = 35 pF
TRANSITION
283 337 380 ns max VS = 2.5 V; see Figure 29
tON (EN) 135 ns typ RL = 300 Ω, CL = 35 pF
174 194 212 ns max VS = 2.5 V; see Figure 31
t
(EN) 228 ns typ RL = 300 Ω, CL = 35 pF
OFF
288 342 385 ns max VS = 2.5 V; see Figure 31
Break-Before-Make Time Delay, tD 30 ns typ RL = 300 Ω, CL = 35 pF
21 ns min VS1 = VS2 = 2.5 V; see Figure 30
Charge Injection 70 pC typ VS = 2.5 V, RS = 0 Ω, CL = 1 nF; see Figure 32
Off Isolation 70 dB typ
Channel-to-Channel Crosstalk 70 dB typ
Total Harmonic Distortion + Noise 0.09 % typ
−3 dB Bandwidth 16 MHz typ RL = 50 Ω, CL = 5 pF; see Figure 26
CS (Off) 70 pF typ VS = 2.5 V, f = 1 MHz
CD (Off) 300 pF typ VS = 2.5 V, f = 1 MHz
CD, CS (On) 400 pF typ VS = 2.5 V, f = 1 MHz
POWER REQUIREMENTS VDD = 5.5 V
IDD 0.001 μA typ Digital inputs = 0 V or VDD
1 μA max
VDD 3.3/16 V min/max
1
Guaranteed by design, not subject to production test.
Analog Signal Range 0 V to VDD V
On Resistance (RON) 3.2 3.4 3.6 Ω typ
On Resistance Match Between Channels (∆RON) 0.06 0.07 0.08 Ω typ VS = 0 V to VDD, IS = −10 mA
On Resistance Flatness (R
) 1.2 1.3 1.4 Ω typ VS = 0 V to VDD, IS = −10 mA
FLAT(ON)
LEAKAGE CURRENTS VDD = 3.6 V, VSS = 0 V
Source Off Leakage, IS (Off) ±0.02 nA typ VS = 0.6 V/3 V, VD = 3 V/0.6 V; see Figure 23
±0.25 ±1 ±8 nA max
Drain Off Leakage, ID (Off) ±0.02 nA typ VS = 0.6 V/3 V, VD = 3 V/0.6 V; see Figure 23
±0.25 ±2 ±16 nA max
Channel On Leakage, ID, IS (On) ±0.05 nA typ VS = VD = 0.6 V or 3 V; see Figure 24
±0.6 ±2 ±16 nA max
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
Input Current, I
INL
2.0 V min
INH
0.8 V max
INL
or I
0.001 μA typ VIN = V
INH
±0.1 μA max
Digital Input Capacitance, CIN 8 pF typ
DYNAMIC CHARACTERISTICS1
Transition Time, t
280 ns typ RL = 300 Ω, CL = 35 pF
TRANSITION
460 526 575 ns max VS = 1.5 V; see Figure 29
tON (EN) 227 ns typ RL = 300 Ω, CL = 35 pF
308 332 346 ns max VS = 1.5 V; see Figure 31
t
(EN) 357 ns typ RL = 300 Ω, CL = 35 pF
OFF
480 549 601 ns max VS = 1.5 V; see Figure 31
Break-Before-Make Time Delay, tD 25 ns typ RL = 300 Ω, CL = 35 pF
20 ns min VS1 = VS2 = 1.5 V; see Figure 30
Charge Injection 60 pC typ VS = 1.5 V, RS = 0 Ω, CL = 1 nF; see Figure 32
Off Isolation 70 dB typ
Channel-to-Channel Crosstalk 70 dB typ
Total Harmonic Distortion + Noise 0.15 % typ
−3 dB Bandwidth 15 MHz typ RL = 50 Ω, CL = 5 pF; see Figure 26
CS (Off) 76 pF typ VS = 1.5 V, f = 1 MHz
CD (Off) 316 pF typ VS = 1.5 V, f = 1 MHz
CD, CS (On) 420 pF typ VS = 1.5 V, f = 1 MHz
POWER REQUIREMENTS VDD = 3.6 V
IDD 0.001 μA typ Digital inputs = 0 V or VDD
1.0 1.0 μA max
VDD 3.3/16 V min/max
1
Guaranteed by design, not subject to production test.
−40°C to
+125°C Unit Test Conditions/Comments
= 0 V to VDD, IS = −10 mA, VDD = 3.3 V,
V
S
= 0 V; see Figure 22
V
SS
or VDD
GND
= 50 Ω, CL = 5 pF, f = 100 kHz;
R
L
see Figure 25
= 50 Ω, CL = 5 pF, f = 100 kHz;
R
L
see Figure 27
= 110 Ω, f = 20 Hz to 20 kHz, VS = 2 V p-p;
R
L
see Figure 28
Rev. A | Page 6 of 20
Page 7
ADG1604
CONTINUOUS CURRENT PER CHANNEL, S OR D
Table 5.
Parameter 25°C 85°C 125°C Unit
CONTINUOUS CURRENT, S OR D
VDD = +5 V, VSS = −5 V
TSSOP (θJA = 150.4°C/W) 315 189 95 mA maximum
LFCSP (θJA = 48.7°C/W) 504 259 112 mA maximum
VDD = 12 V, VSS = 0 V
TSSOP (θJA = 150.4°C/W) 378 221 112 mA maximum
LFCSP (θJA = 48.7°C/W) 627 311 126 mA maximum
VDD = 5 V, VSS = 0 V
TSSOP (θJA = 150.4°C/W) 249 158 91 mA maximum
LFCSP (θJA = 48.7°C/W) 403 224 105 mA maximum
VDD = 3.3 V, VSS = 0 V
TSSOP (θJA = 150.4°C/W) 256 165 98 mA maximum
LFCSP (θJA = 48.7°C/W) 410 235 116 mA maximum
Rev. A | Page 7 of 20
Page 8
ADG1604
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 6.
Parameter Rating
VDD to VSS 18 V
VDD to GND −0.3 V to +18 V
VSS to GND +0.3 V to −18 V
Analog Inputs1
Digital Inputs1
Peak Current, S or D
Continuous Current, S or D2 Data + 15%
Operating Temperature Range
Industrial (Y Version) −40°C to +125°C
Storage Temperature Range −65°C to +150°C
Junction Temperature 150°C
16-Lead TSSOP, θJA Thermal
Impedance (2-Layer Board)
16-Lead LFCSP, θJA Thermal
Impedance (4-Layer Board)
Reflow Soldering Peak
Temperature, Pb free
1
Overvoltages at IN, S, or D are clamped by internal diodes. Current should be
limited to the maximum ratings given.
2
See Table 5.
− 0.3 V to VDD + 0.3 V or
V
SS
30 mA, whichever occurs first
GND − 0.3 V to V
30 mA, whichever occurs first
1150 mA (pulsed at 1 ms,
10% duty-cycle maximum)
150.4°C/W
48.7°C/W
260°C
+ 0.3 V or
DD
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
ESD CAUTION
Rev. A | Page 8 of 20
Page 9
ADG1604
V
PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS
A0
EN
NC
A1
14
13
15
16
PIN 1
1
A0
2
EN
3
SS
ADG1604
4
S1
TOP VIEW
(Not to Scale)
5
S2
6
D
7
NC
NC = NO CONNECT
14
A1
13
GND
12
V
DD
11
S3
10
S4
9
NC
8
NC
07982-002
Figure 2. 14-Lead TSSOP Pin Configuration
SS
2NC
ADG1604
3S1
TOP VIEW
(Not to Scale)
4S2
5
6
D
NC
NOTES
1. NC = NO CONNECT .
2. EXPOSED PAD TIED TO SUBSTRATE, V
Figure 3. 16-Lead LFCSP Pin Configuration
INDICATOR
1V
Table 7. Pin Function Descriptions
Pin No.
Mnemonic Description 14-Lead TSSOP 16-Lead LFCSP
1 15 A0 Logic Control Input.
2 16 EN
Active High Digital Input. When this pin is low, the device is disabled and all switches
are off. When this pin is high, the Ax logic inputs determine the on switch.
3 1 VSS Most Negative Power Supply Potential.
4 3 S1 Source Terminal. This pin can be an input or output.
5 4 S2 Source Terminal. This pin can be an input or output.
6 6 D Drain Terminal. This pin can be an input or output.
7, 8, 9 2, 5, 7, 8, 13 NC No Connection.
10 9 S4 Source Terminal. This pin can be an input or output.
11 10 S3 Source Terminal. This pin can be an input or output.
12 11 VDD Most Positive Power Supply Potential.
13 12 GND Ground (0 V) Reference.
14 14 A1 Logic Control Input.
N/A 17 (EPAD) EP (EPAD) Exposed Pad. Tied to substrate, VSS.
12 GND
11 V
DD
10 S3
9S4
8
7
NC
NC
.
SS
07982-003
Table 8. ADG1604 Truth Table
EN A1 A0 S1 S2 S3 S4
0 X X Off Off Off Off
1 0 0 On Off Off Off
1 0 1 Off On Off Off
1 1 0 Off Off On Off
1 1 1 Off Off Off On
Rev. A | Page 9 of 20
Page 10
ADG1604
TYPICAL PERFORMANCE CHARACTERISTICS
1.4
TA = 25°C
= +3.3V
V
DD
V
= –3.3V
1.2
1.0
0.8
ON RESISTANCE ()
0.6
SS
= +5V
V
DD
V
= –5V
SS
VDD = +8V
V
= –8V
SS
1.4
1.2
1.0
0.8
ON RESISTANCE ()
0.6
TA = +125°C
T
= +85°C
A
T
= +25°C
A
T
= –40°C
A
VDD = 12V
V
= 0V
SS
0.4
–8–6–4–202468
VS OR VD VOLTAGE (V)
Figure 4. On Resistance as a Function of VD (VS) for Dual Supply
3.5
TA = 25°C
3.0
2.5
2.0
1.5
ON RESISTANCE ()
1.0
0.5
0246810121416
VDD = 3.3V
V
= 0V
SS
VDD = 5V
V
= 0V
SS
VS OR VD VOLTAGE (V)
V
= 12V
DD
V
= 0V
SS
VDD = 16V
V
= 0V
SS
Figure 5. On Resistance as a Function of VD (VS) for Single Supply
1.4
1.2
0.4
024681012
07982-014
VS OR VD VOLTAGE (V)
07982-010
Figure 7. On Resistance as a Function of VD (VS) for Different Temperatures,
12 V Single Supply
2.5
TA = +125°C
= +125°C
T
A
T
T
= +85°C
= +85°C
A
A
T
T
= +25°C
= +25°C
A
A
T
T
= –40°C
= –40°C
A
A
2.0
1.5
ON RESISTANCE ()
1.0
00.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
07982-015
VS OR VD VOLTAGE (V)
VDD = 5V
V
= 0V
SS
07982-013
Figure 8. On Resistance as a Function of VD (VS) for Different Temperatures,
5 V Single Supply
4.0
VDD = 3.3V
V
= 0V
SS
3.5
1.0
0.8
ON RESISTANCE ()
0.6
=+5V
V
DD
V
= –5V
SS
0.4
–6–4–20246
VS OR VD VOLTAGE (V)
TA = +125°C
T
= +85°C
A
T
= +25°C
A
T
= –40°C
A
07982-012
Figure 6. On Resistance as a Function of VD (VS) for Different Temperatures,
±5 V Dual Supply
Rev. A | Page 10 of 20
3.0
T
= +125°C
2.5
ON RESISTANCE ()
2.0
1.5
00.51.01.52.02.53. 03. 5
A
T
= +85°C
A
T
= +25°C
A
TA = –40°C
VS OR VD VOLTAGE (V)
07982-006
Figure 9. On Resistance as a Function of VD (VS) for Different Temperatures,
3.3 V Single Supply
Page 11
ADG1604
(
15
10
5
0
–5
LEAKAGE CURRENT (n A)
–10
–15
020406080100120
TEMPERATURE (°C)
ID, IS (ON) +, +
ID (OFF) –, +
IS (OFF) +, –
IS (OFF) –, +
ID, IS (ON) –, –
ID (OFF) +, –
07982-033
Figure 10. Leakage Currents as a Function of Temperature, ±5 V Dual Supply
20
15
10
5
ID, IS (ON) +, +
ID (OFF) –, +
IS (OFF) +, –
Figure 13. Leakage Currents as a Function of Temperature, 3.3 V Single Supply
18
16
14
12
10
8
6
4
2
LEAKAGE CURRENT (n A)
0
–2
–4
0 20406080100120
TEMPERATURE (°C)
ID, IS (OFF) +, +
ID, IS (OFF) –, –
ID (OFF) –, +
IS (OFF) +, –
IS (OFF) –, +
ID (OFF) +, –
600
500
400
300
IDD = +12V
I
= 0V
SS
IDD PER CHANNEL
= 25°C
T
A
7982-031
0
–5
LEAKAGE CURRENT (n A)
–10
–15
0 20406080100120
TEMPERATURE (°C)
ID, IS (ON) –, –
IS (OFF) –, +
ID (OFF) +, –
07982-032
Figure 11. Leakage Currents as a Function of Temperature, 12 V Single Supply
20
15
ID, IS (OFF) +, +
10
ID, IS (OFF) –, –
5
LEAKAGE CURRENT (n A)
0
–5
0 20406080100120
TEMPERATURE (°C)
ID (OFF) –, +
IS (OFF) +, –
IS (OFF) –, +
ID (OFF) +, –
07982-030
Figure 12. Leakage Currents as a Function of Temperature, 5 V Single Supply
µA)
200
DD
I
100
0
–100
024681012
= +5V
I
DD
I
= –5V
SS
IDD = +3.3V
I
= 0V
SS
Figure 14. I
I
= +5V
DD
I
= 0V
SS
LOGIC (V)
vs. Logic Level
DD
350
300
250
200
150
100
CHARGE INJECTI ON (pC)
50
0
–6–4–202468101214
VDD = +3.3V
V
= 0V
SS
VS (V)
VDD = +5V
V
= –5V
SS
VDD = +5V
V
= 0V
SS
VDD = +12V
V
= 0V
SS
Figure 15. Charge Injection vs. Source Voltage
07982-005
07982-009
Rev. A | Page 11 of 20
Page 12
ADG1604
–
A
450
400
350
300
250
TIME (ns)
200
150
100
50
–40–2002040608010012 0
VDD = +3.3V, VSS = 0V
V
DD
TEMPERATURE (°C)
Figure 16. tON/t
V
= +5V, VSS = 0V
DD
V
= +5V, VSS = –5V
DD
= +12V, VSS = 0V
Times vs. Temperature
OFF
15
= 25°C
T
A
–20
V
= +5V
DD
–25
V
= –5V
SS
–30
–35
–40
–45
–50
–55
–60
TION (dB)
–65
–70
–75
–80
OFF ISOL
–85
–90
–95
–100
–105
–110
100k1M10M100M1G10k1k
FREQUENCY ( Hz)
Figure 17. Off Isolation vs. Frequency
7982-019
07982-007
INSERTION LOSS (dB)
ACPSRR (dB)
–10
–20
–30
–40
–50
–60
–70
–80
–90
–100
0
–1
–2
–3
–4
–5
–6
0
100k1M10M100M10k1k
FREQUENCY (Hz)
Figure 19. On Response vs. Frequency
TA = 25°C
V
= +5V
DD
V
= –5V
SS
NO DECOUPLI NG
CAPACITORS
DECOUPLING
CAPACITORS
100k1M10M10k1k
FREQUENCY (Hz)
Figure 20. ACPSRR vs. Frequency
TA = 25°C
V
= +5V
DD
V
= –5V
SS
07982-004
07982-008
0.20
RL = 110
T
= 25°C
A
0.18
0.16
0.14
0.12
0.10
0.08
THD + N (%)
0.06
0.04
0.02
VDD = +12V
V
= 5V p-p
S
0
0
FREQUENCY ( Hz)
VDD = +3.3V
V
= 2V p-p
S
VDD = +5V
V
= 3.5V p-p
S
VDD = +5V
V
= –5V
SS
V
= 5V p-p
S
15k10k5k20k
07982-017
Figure 21. THD + N vs. Frequency
CROSSTALK (dB)
–20
–40
–60
–80
–100
–120
0
TA = 25°C
V
V
= +5V
DD
= –5V
SS
100k1M10M100M1G10k1k
FREQUENCY ( Hz)
Figure 18. Crosstalk vs. Frequency
07982-018
Rev. A | Page 12 of 20
Page 13
ADG1604
V
V
V
V
V
V
V
V
TEST CIRCUITS
DD
SS
0.1µF
50
D
OFF ISOLATION = 20 log
Figure 25. Off Isolation
SS
0.1µF
D
NETWORK
ANALYZER
50
V
S
V
OUT
R
L
50
V
OUT
V
S
NETWORK
ANALYZER
50
V
OUT
R
L
50
V
S
7982-027
V
SxD
S
Figure 22. On Resistance
IS (OFF)ID (OFF)
SxD
AA
0.1µF
V
DDVSS
Sx
GND
I
DS
07982-020
DD
0.1µF
V
DDVSS
Sx
GND
ID (ON)
A
V
D
V
D
07982-021
INSERTION LOSS = 20 log
WITH SWITCH
V
OUT
V
WITHOUT SWITCH
OUT
07982-028
Figure 26. Bandwidth
DD
0.1µF
NETWO RK
ANALYZER
V
OUT
R
L
50
V
S
CHANNEL-TO-CHANNEL CROSSTALK = 20 log
07982-022
V
DD
S1
S2
GND
V
OUT
V
SS
0.1µF
V
SS
D
R
L
50
S
07982-029
Figure 27. Channel-to-Channel Crosstalk
S
Figure 23. Off Leakage
SxD
NC
NC = NO CONNECT
Figure 24. On Leakage
Rev. A | Page 13 of 20
Page 14
ADG1604
V
V
V
V
V
0.1µF
IN
V
IN
V
DD
SS
0.1µF
V
V
DD
SS
AUDIO PRECISIO N
R
S
Sx
V
S
V p-p
V
OUT
07982-034
GND
D
R
L
110
Figure 28. THD + Noise
SS
DD
0.1µF
A1
V
IN
2.0V
A0
EN
0.1µF
V
V
SS
DD
S1
S2
V
S1
ADDRESS
DRIVE (V
S3
GND
S4
D
R
L
300
V
S4
V
OUT
C
L
35pF
3V
)
)
IN
0V
V
OUT
50%50%
90%
t
TRANSITI ON
t
TRANSITION
90%
07982-023
Figure 29. Address to Output Switching Times
DD
SS
0.1µF
0.1µF
V
V
SS
DD
A1
V
IN
300
A0
S1
S2
S3
V
S1
ADDRESS
DRIVE (V
3V
)
IN
0V
S4
2.0V
EN
GND
80%
D
R
L
300
C
L
35pF
V
OUT
V
OUT
t
BBM
80%
07982-024
Figure 30. Break-Before-Make Time Delay
Rev. A | Page 14 of 20
Page 15
ADG1604
V
V
V
V
DD
SS
0.1µF
A1
A0
EN
V
IN
300
0.1µF
3V
V
OUT
ENABLE
DRIVE (V
OUTPUT
)
IN
0V
V
OUT
0V
V
V
SS
DD
S1
S2
V
S
S3
S4
D
GND
R
L
300
C
L
35pF
50%50%
0.9V
OUT
t
(EN)
ON
t
OFF
0.9V
(EN)
OUT
07982-025
Figure 31. Enable-to-Output Switching Delay
SS
DD
V
V
R
S
V
S
DD
SxD
DECODER
SS
V
OUT
C
L
1nF
V
OUT
V
IN
SW OFF
Q
INJ
= CL × V
OUT
V
OUT
SW OFF
SW ON
GND
SW OFF
V
A2A1
IN
EN
SW OFF
7982-026
Figure 32. Charge Injection
Rev. A | Page 15 of 20
Page 16
ADG1604
TERMINOLOGY
IDD
The positive supply current.
I
SS
The negative supply current.
V
(VS)
D
The analog voltage on Terminal D and Terminal S.
R
ON
The ohmic resistance between Terminal D and Terminal S.
R
FLAT(ON)
Flatness that is defined as the difference between the maximum
and minimum value of on resistance measured over the specified
analog signal range.
I
(Off)
S
The source leakage current with the switch off.
I
(Off)
D
The drain leakage current with the switch off.
I
, IS (On)
D
The channel leakage current with the switch on.
V
INL
The maximum input voltage for Logic 0.
V
INH
The minimum input voltage for Logic 1.
I
(I
)
INL
INH
The input current of the digital input.
C
(Off)
S
The off switch source capacitance, which is measured with
reference to ground.
C
(Off)
D
The off switch drain capacitance, which is measured with
reference to ground.
C
, CS (On)
D
The on switch capacitance, which is measured with reference to
ground.
C
IN
The digital input capacitance.
t
TRANSITION
The delay time between the 50% and 90% points of the digital
input and switch on condition when switching from one address
state to another. See Figure 29.
t
(EN)
ON
The delay between applying the digital control input and the
output switching on. See Figure 31.
t
(EN)
OFF
The delay between applying the digital control input and the
output switching off. See Figure 31.
Charge Injection
A measure of the glitch impulse transferred from the digital
input to the analog output during switching. See Figure 32.
Off Isolation
A measure of unwanted signal coupling through an off switch.
See Figure 25.
Crosstalk
A measure of unwanted signal that is coupled through from
one channel to another as a result of parasitic capacitance. See
Figure 27.
Bandwidth
The frequency at which the output is attenuated by 3 dB. See
Figure 26.
On Response
The frequency response of the on switch.
Insertion Loss
The loss due to the on resistance of the switch.
Total Harmonic Distorition + Noise (THD + N)
The ratio of the harmonic amplitude plus noise of the signal to
the fundamental. See Figure 28.
AC Power Supply Rejection Ratio (ACPSRR)
The ratio of the amplitude of signal on the output to the amplitude
of the modulation. This is a measure of the ability of the part to
avoid coupling noise and spurious signals that appear on the supply
voltage pin to the output of the switch. The dc voltage on the device
is modulated by a sine wave of 0.62 V p-p.
Rev. A | Page 16 of 20
Page 17
ADG1604
C
OUTLINE DIMENSIONS
5.10
5.00
4.90
4.50
4.40
4.30
PIN 1
1.05
1.00
0.80
0.15
0.05
COPLANARITY
0.10
14
1
0.65 BSC
0.30
0.19
COMPLIANT TO JEDEC STANDARDS MO-153-AB-1
8
6.40
BSC
7
1.20
0.20
MAX
SEATING
PLANE
0.09
8°
0°
0.75
0.60
0.45
061908-A
Figure 33. 14-Lead Thin Shrink Small Outline Package [TSSOP]
(RU-14)
Dimensions shown in millimeters
0.50
0.40
0.30
1
16
PA D
4
5
FOR PROPER CO NNECTION O F
THE EXPOSED PAD, REFER TO
THE PIN CONF IGURATIO N AND
FUNCTION DESCRI PTIONS
SECTION O F THIS DATA SHEET.
N
P
I
D
N
I
2.65
2.50 SQ
2.35
0.25 MIN
1
R
O
C
I
A
T
031006-A
INDI
SEATING
PIN 1
ATO R
1.00
0.85
0.80
PLANE
12° MAX
4.00
BSC SQ
3.75
BSC SQ
TOP VIEW
0.80 MAX
0.65 TYP
0.05 MAX
0.30
0.23
0.18
COMPLIANTTOJEDEC STANDARDS MO-220-VGGC.
0.02 NOM
0.20 REF
0.60 MAX
12
0.65
9
BSC
1.95 BCS
COPLANARIT Y
0.08
13
EXPOSED
8
BOTTOM VIEW
Figure 34. 16-Lead Lead Frame Chip Scale Package [LFCSP_VQ]
4 mm × 4 mm Body, Very Thin Quad
(CP-16-13)
Dimensions shown in millimeters
ORDERING GUIDE
Model Temperature Range Package Description Package Option
ADG1604BRUZ1 −40°C to +125°C 14-Lead Thin Shrink Small Outline Package [TSSOP] RU-14
ADG1604BRUZ-REEL1 −40°C to +125°C 14-Lead Thin Shrink Small Outline Package [TSSOP] RU-14
ADG1604BRUZ-REEL71 −40°C to +125°C 14-Lead Thin Shrink Small Outline Package [TSSOP] RU-14
ADG1604BCPZ- REEL1 −40°C to +125°C 16-Lead Lead Frame Chip Scale Package [LFCSP_VQ] CP-16-13
ADG1604BCPZ-REEL71 −40°C to +125°C 16-Lead Lead Frame Chip Scale Package [LFCSP_VQ] CP-16-13