0.5 Ω max on resistance flatness
33 V supply maximum ratings
Fully specified at ±15 V/12 V/±5 V
3 V logic compatible inputs
Rail-to-rail operation
Break-before-make switching action
16-lead TSSOP and 4 mm × 4 mm LFCSP packages
Typical power consumption (< 0.03 µW)
APPLICATIONS
Relay replacement
Audio and video routing
Automatic test equipment
Data acquisition systems
Battery-powered systems
Sample-and-hold systems
Communication systems
Relay replacement
GENERAL DESCRIPTION
The ADG1408 and ADG1409 are monolithic iCMOS analog
multiplexers comprising eight single channels and four
differential channels, respectively. The ADG1408 switches one
of eight inputs to a common output as determined by the 3-bit
binary address lines A0, A1, and A2. The ADG1409 switches
one of four differential inputs to a common differential output
as determined by the 2-bit binary address lines A0 and A1. An
EN input on both devices is used to enable or disable the device.
When disabled, all channels are switched OFF.
The iCMOS (industrial-CMOS) modular manufacturing
process combines high-voltage CMOS (complementary metaloxide semiconductor) and bipolar technologies. It enables the
development of a wide range of high performance analog ICs
capable of 30-V operation in a footprint that no other
generation of high-voltage parts has been able to achieve.
Unlike analog ICs using conventional CMOS processes, iCMOS
components can tolerate high supply voltages, while providing
increased performance, dramatically lower power consumption,
and reduced package size.
ADG1408/ADG1409
FUNCTIONAL BLOCK DIAGRAMS
ADG1408
S1
S8
1 OF 8
DECODER
A2
A1
A0
SWITCHES SHOWN FOR A “1” LOGIC INPUT
EN
S1A
S4A
D
S1B
S4B
Figure 1.
The ultralow on resistance and on resistance flatness of these
switches make them ideal solutions for data acquisition and
gain switching applications, where low distortion is critical.
iCMOS construction ensures ultralow power dissipation,
making the parts ideally suited for portable and battery
powered instruments
PRODUCT HIGHLIGHTS
1. 5 Ω max on resistance.
2. 0.5 Ω max on resistance flatness.
3. 3 V logic compatible digital input V
4. 16-lead TSSOP and 4 mm ×4 mm LFCSP package.
ADG1409
DA
DB
1 OF 4
DECODER
A0
EN
A1
= 2.0 V, VIL = 0.8 V.
IH
Rev. PrB
Information furnished by Analog Devices is believed to be accurate and reliable.
However, no responsibility is assumed by Analog Devices for its use, nor for any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication
or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
VDD = +15 V ± 10%, VSS = –15 V ± 10%, GND = 0 V, unless otherwise noted.
Table 1.
Parameter +25ºC
−40ºC to +85ºC −40ºC to +125ºC
ANALOG SWITCH
Analog Signal Range VSS to VDD V
RON 3
4 5 5
RON Flatness
0.5
∆RON 0.5
LEAKAGE CURRENTS
Source OFF Leakage IS (OFF) ±0.01 nA typ VD = ±10 V, VS = −10 V;
±0.5 ±2.5 ±50 nA max ±0.5
Drain OFF Leakage ID (OFF) VD = ±10 V; VS = ±10 V;
ADG1408 ±1 ±100 ±100 nA max Test Circuit 3
ADG1409 ±1 ±50 ±50 nA max
Channel ON Leakage ID, IS (ON) VS = VD = ±10 V;
ADG1408 ±1 ±100 ±100 nA max Test Circuit 4
ADG1409 ±1 ±50 ±50 nA max
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
2.0 2.0 V min
INH
0.8 0.8 V max
INL
Input Current
I
or I
±0.005 µA max VIN= V
INL
INH
±0.5 ±0.5 µA max
CIN, Digital Input Capacitance 5 pF typ
DYNAMIC CHARACTERISTICS2
t
80 120 120 ns typ RL = 300 Ω, CL = 35 pF;
TRANSITION
250 250 ns max VS1 = ±10 V, VS8 = ±10 V;
T
10 10 10 ns typ RL = 300 Ω, CL = 35 pF;
BBM
1 ns min VS = 10 V; Test Circuit 6
tON(EN) 85 125 125 ns typ RL = 300 Ω CL = 35 pF;
150 225 225 ns max VS = 5 V; Test Circuit 7
t
(EN) 40 65 65 ns typ RL = 300 Ω, CL = 35 pF;
OFF
150 150 ns max VS = 5 V; Test Circuit 7
Charge Injection 20 20 pC typ
OFF Isolation 75 dB typ RL = 1 kΩ, f = 100 kHz;
V
Channel-to-Channel Crosstalk 85 dB typ RL = 1 kΩ, f = 100 kHz;
Test Circuit 10
Total Harmonic Distortion,
0.002 % typ
THD + N
−3 dB Bandwidth
50 MHz typ R
Test Circuit 10
CS (OFF) 15 pF typ f = 1 MHz
Unit Test Conditions/Comments
Ω typ
Ω max
Ω typ
Ω max
Ω typ
Ω max
VD = ±10 V, IS = −10 mA
VD = +10 V, −10 V
VD = +10 V, −10 V
Test Circuit 2
or V
INH
INL
Test Circuit 5
= 0 V, RS = 0 Ω, CL = 10 nF;
V
S
Test Circuit 8
= 0 V; Test Circuit 9
EN
= 600 Ω, 5 V rms; f=20 Hz to
R
L
20 kHz
= 300 Ω, CL = 5 pF; Test Circuit 10
L
Rev. PrB | Page 3 of 16
ADG1408/ADG1409 Preliminary Technical Data
Parameter +25ºC
−40ºC to +85ºC −40ºC to +125ºC
DYNAMIC CHARACTERISTICS2
CD (OFF) f = 1 MHz
ADG1408 100 pF typ
ADG1409 50 pF typ
CD, CS(ON) f = 1 MHz
ADG1408 150 pF typ
ADG1409 75 pF typ
POWER REQUIREMENTS
IDD 0.001 µA typ Digital inputs= 0 V or VDD
5 5 µA max
IDD 150 µA typ Digital inputs= 5 V
300 µA max
ISS 0.001 µA typ Digital inputs= 0 V or VDD
5 5 µA max
I
0.001 µA typ Digital inputs= 0 V or VDD
GND
5 5 µA max
I
150 µA typ Digital inputs= 5 V
GND
5 300 µA max
1
Temperature ranges are as follows: B Version: −40°C to +85°C; T Version: −40°C to +125°C.
2
Guaranteed by design, not subject to production test.
SINGLE SUPPLY
VDD = 12 V V ± 10%,, VSS = 0 V, GND = 0 V, unless otherwise noted.
Table 2.
Parameter +25ºC −40ºC to +85ºC −40ºC to +125ºC Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 to VDD V
RON 6 Ω typ VD = 3 V, 10 V, IS = –1 mA
7 8 9 Ω max
RON Flatness Ω typ VD = 3 V, 10 V, IS = –1 mA
1.5 Ω max
∆RON 0.5 Ω typ VD = 3 V, 10 V, IS = –1 mA
Ω max
Channel ON Leakage ID, IS (ON) VS = VD = 8 V/0 V;
ADG1408 ±1 ±100 ±100 nA max Test Circuit 4
ADG1409 ±1 ±50 ±50 nA max
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
Input Current
IINL or I
INH
C
Digital Input Capacitance 8 pF typ f = 1 MHz
IN,
DYNAMIC CHARACTERISTICS2
t
T
1 ns min VS = 5 V; Test Circuit 6
tON (EN) 140 ns typ RL = 300 Ω CL = 35 pF;
V
130 ns typ RL = 300 Ω, CL = 35 pF;
TRANSITION
10 ns typ RL = 300 Ω, CL = 35 pF;
BBM
1
2.0 2.0 V min
INH
0.8 0.8 V max
INL
±10 ±10 µA max VIN = 0 or VDD
Unit Test Conditions/Comments
VDD = +16.5 V, VSS = −16.5 V
= 8 V/0 V, VS8 = 0 V/8 V;
V
S1
Test Circuit 5
= 5 V; Test Circuit 7
S
Rev. PrB | Page 4 of 16
Preliminary Technical Data ADG1408/ADG1409
Parameter +25ºC −40ºC to +85ºC −40ºC to +125ºC Unit Test Conditions/Comments
DYNAMIC CHARACTERISTICS2
t
(EN) 60 ns typ RL = 300 Ω, CL = 35 pF;
OFF
V
Charge Injection 5 pC typ
OFF Isolation –75 dB typ RL = 1 kΩ f = 100 kHz;
V
Channel-to-Channel Crosstalk 85 dB typ RL = 1 kΩ, f = 100 kHz;
Test Circuit 10
Total Harmonic Distortion, THD + N 0.002 % typ RL = 600 Ω, 5 V rms; f=20 Hz to 20 kHz
−3 dB Bandwidth
50 MHz typ R
CS (OFF) 15 pF typ f = 1 MHz
CD (OFF) f = 1 MHz
ADG1408 100 pF typ
ADG1409 50 pF typ
CD, CS (ON) f = 1 MHz
ADG1408 150 pF typ
ADG1409 75 pF typ
POWER REQUIREMENTS VDD = 13.2 V
IDD 1 1 µA typ Digital inputs= 0 V or VDD
5 5 µA max
IDD 150 µA typ Digital inputs= 5
300 µA max
1
Temperature ranges are as follows: B Version: –40°C to +85° ; T Version: –55°C to +125°.
2
Guaranteed by design, not subject to production test.
DUAL SUPPLY
VDD = 5 V ± 10%, VSS = –5 V ± 10%, GND = 0 V, unless otherwise noted.
Table 3.
Parameter +25ºC −40ºC to +85ºC −40ºC to +125ºC Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range VSS to VDD V
RON 6 Ω typ
7 8 10 Ω max
∆RON 0.5 Ω max
LEAKAGE CURRENTS
Source OFF Leakage IS (OFF) ±0.01 nA typ
±0.5 ±2.5 ±50 nA max
Drain OFF Leakage ID (OFF) VD = ±3.3. V; VS = ±3.3 V;
ADG1408 ±1 ±100 ±100 nA max Test Circuit 3
ADG1409 ±1 ±50 ±50 nA max
Channel ON Leakage ID, IS (ON) VS = VD = ±3.3 V;
ADG1408 ±1 ±100 ±100 nA max Test Circuit 4
ADG1409 ±1 ±50 ±50 nA max
1
= 5 V; Test Circuit 7
S
= 0 V, RS = 0 Ω, CL = 10 nF;
V
S
Test Circuit 8
= 0 V; Test Circuit 9
EN
= 300 Ω, CL = 5 pF; Test Circuit 10
L
V
= ±3.3 V, IS = −10 mA
D
V
= +3.3 V, −3.3 V
D
V
= ±3.3 V, VS = −3.3 V;
D
Test Circuit 2
Rev. PrB | Page 5 of 16
ADG1408/ADG1409 Preliminary Technical Data
Parameter +25ºC −40ºC to +85ºC −40ºC to +125ºC Unit Test Conditions/Comments
DIGITAL INPUTS
Input High Voltage, V
Input Low Voltage, V
Input Current
I
or I
INL
±0.005 µA max VIN= V
INH
±0.5 ±0.5 µA max
CIN, Digital Input Capacitance 5 pF typ
DYNAMIC CHARACTERISTICS2
t
120 120 ns typ RL = 300 Ω, CL = 35 pF;
TRANSITION
250 250 ns max
T
ns typ RL = 300 Ω, CL = 35 pF;
BBM
1 ns min VS = 5 V; Test Circuit 6
tON(EN) 85 125 125 ns typ RL = 300 Ω CL = 35 pF;
150 225 225 ns max VS = 5 V; Test Circuit 7
t
(EN) 65 65 ns typ RL = 300 Ω, CL = 35 pF;
OFF
150 150 ns max VS = 5 V; Test Circuit 7
Charge Injection 20 pC typ
OFF Isolation
V
Channel-to-Channel Crosstalk 85 85 dB typ RL = 1 kΩ, f = 100 kHz;
Test Circuit 10
Total Harmonic Distortion, THD +
N
-3dB Bandwidth 50 MHz typ RL = 300 Ω, CL = 5 pF; Test Circuit 10
Test Circuit 10
CS (OFF) 15 pF typ f = 1 MHz
CD (OFF) f = 1 MHz
ADG1408 100 pF typ
ADG1409 50 pF typ
CD, CS(ON) f = 1 MHz
ADG1408 150 pF typ
ADG1409 75 pF typ
POWER REQUIREMENTS
IDD 0.001 µA typ Digital inputs= 0 V or VDD
5 5 µA max
IDD 150 µA typ Digital inputs= 5 V
300 µA max
ISS 0.001 µA typ Digital inputs= 0 V or VDD
5 5 µA max
I
0.001 µA typ Digital inputs= 0 V or VDD
GND
5 5 µA max
I
150 µA typ Digital inputs= 5 V
GND
5 300 µA max
1
Temperature ranges are as follows: B Version: −40°C to +85°C; Y Version: −40°C to +125°C.
2
Guaranteed by design, not subject to production test.
2.0 2.0 V min
INH
0.8 0.8 V max
INL
−75
−75
dB typ RL = 1 kΩ, f = 100 kHz;
0.002 % typ
or V
INH
INL
= ±10 V, VS8 = ±10 V;
V
S1
Test Circuit 5
VS = 0 V, RS = 0 Ω, CL = 10 nF; Test
Circuit 8
= 0 V; Test Circuit 9
EN
RL = 600 Ω, 5 V rms; f = 20 Hz to 20
kHz
= +16.5V, VSS = −16.5V
V
DD
Rev. PrB | Page 6 of 16
Preliminary Technical Data ADG1408/ADG1409
ABSOLUTE MAXIMUM RATINGS
Absolute maximum ratings T
= 25°C, unless otherwise noted.
A
Table 4.
Parameter Rating
V
to VSS 36 V
DD
VDD to GND −0.3 V to +25 V
V
to GND +0.3 V to −25 V
SS
Analog, Digital Inputs1
Continuous Current, S or D 30 mA
Peak Current, S or D (Pulsed at 1 ms,
10% Duty Cycle max)
Operating Temperature Range
Industrial (B Version) −40° C to +85°C
Automotive (Y Version) –40° C to +125°C
Storage Temperature Range –65° C to +150°C
Junction Temperature 150°C
TSSOP Package, Power Dissipation 450 mW
Overvoltages at A, EN, S, or D are clamped by internal diodes. Current should
be limited to the maximum ratings given
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability. Only one absolute maximum rating may be
applied at any one time.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
VDD Most positive power supply potential.
VSS Most negative power supply potential in dual supplies. In single supply applications, it may be connected to ground.
GND Ground (0 V) reference.
RON Ohmic resistance between D and S.
∆RON Difference between the RON of any two channels.
IS (OFF) Source leakage current when the switch is off.
ID (OFF) Drain leakage current when the switch is off.
ID, IS (ON) Channel leakage current when the switch is on.
VD (VS) Analog voltage on terminals D, S.
CS (OFF) Channel input capacitance for OFF condition.
CD (OFF) Channel output capacitance for OFF condition.
CD, CS (ON) ON switch capacitance.
CIN Digital input capacitance.
tON (EN) Delay time between the 50% and 90% points of the digital input and switch ON condition.
t
(EN) Delay time between the 50% and 90% points of the digital input and switch OFF condition.
OFF
Delay time between the 50% and 90% points of the digital inputs and the switch ON condition when switching from
t
t
V
V
I
I
ISS Negative supply current.
Off Isolation A measure of unwanted signal coupling through an OFF channel.
Charge Injection A measure of the glitch impulse transferred from the digital input to the analog output during switching.
Bandwidth The frequency at which the output is attenuated by 3dBs.
On Response The frequency response of the “ON” switch.
THD + N The ratio of the harmonic amplitude plus noise of the signal to the fundamental.
TRANSITION
OFF time measured between the 80% point of both switches when switching from one address state to another.
OPEN
Maximum input voltage for Logic 0.
INL
Minimum input voltage for Logic 1.
INH
(I
) Input current of the digital input.
INL
INH
Positive supply current.
DD
one address state to another.
Rev. PrB | Page 9 of 16
ADG1408/ADG1409 Preliminary Technical Data
TYPICAL PERFORMANCE CHARACTERISTICS
TBD
Figure 4. On Resistance as a Function of VD( VS) for Single Supply
TBD
TBD
Figure 7. On Resistance as a Function of VD( VS) for Different Temperatures,
Single Supply
TBD
Figure 5. On Resistance as a Function of VD( VS) for Dual Supply
TBD
Figure 6. On Resistance as a Function of VD( VS) for Different Temperatures,
Single Supply
Rev. PrB | Page 10 of 16
Figure 8. On Resistance as a Function of VD( VS) for Different Temperatures,
Dual Supply
TBD
Figure 9. Leakage Currents as a Function of V
D
(VS)
Preliminary Technical Data ADG1408/ADG1409
TBD
Figure 10. Leakage Currents as a function of Temperature
TBD
Figure 11. Supply Currents vs. Input Switching Frequency
TBD
Figure 14. Off Isolation vs. Frequency
TBD
Figure 15. Cross talk vs. Frequency
TBD
Figure 12. Charge Injection vs. Source Voltage
Figure 16. On Response vs. Frequency
TBD
Figure 13. TON/TOFF Times vs. Temperature)
Rev. PrB | Page 11 of 16
TBD
TBD
Figure 17. THD + N vs. Frequency
ADG1408/ADG1409 Preliminary Technical Data
TEST CIRCUITS
Figure 18. Test Circuit 1. On Resistance
Figure 19. Test Circuit 2. I
(OFF)
S
Figure 20. Test Circuit 3. I
Figure 21. Test Circuit 4. I
(OFF)
D
(ON)
D
Figure 22. Test Circuit 5. Switching Time of Multiplexer, t
Figure 23. Test Circuit 6. Break-Before-Make Delay, t
TRANSlTlON
OPEN
Rev. PrB | Page 12 of 16
Preliminary Technical Data ADG1408/ADG1409
(EN), t
Figure 24. Test Circuit 7. Enable Delay, t
ON
OFF
(EN)
Figure 25. Test Circuit 8. Charge Injection
Figure 26. Test Circuit 9. OFF Isolation
Figure 27. Test Circuit 10. Channel-to-Channel Crosstalk
Rev. PrB | Page 13 of 16
ADG1408/ADG1409 Preliminary Technical Data
OUTLINE DIMENSIONS
Figure 28. 16-Lead Thin Shrink Small Outline Package [TSSOP] (RU-16)
Figure 29. 16-Lead Lead Frame Chip Scale Package [LFCSP]
Dimensions shown in inches and (millimeters)
4mm × 4 mm (CP-16)
ORDERING GUIDE
Model Temperature Range Description Package Option
ADG1408YRU
ADG1409YRU
ADG1409YCP
ADG1409YCP
−40°C to +125°C
−40°C to +125°C
−40°C to +125°C
−40°C to +125°C
Thin Shrink Small Outline Package (TSSOP) RU-16
Thin Shrink Small Outline Package (TSSOP) RU-16
Thin Shrink Small Outline Package (TSSOP) CP-16
Thin Shrink Small Outline Package (TSSOP) CP-16