Page 1
16V Low Cost, High Performance
a
CMOS Rail-to-Rail
Preliminary Technical Data
FEATURES
Low Offset Voltage: 75 µV max
Low Input Bias Currents 1pA Max
Single-Supply Operation: 5 to 16 Volts
Dual-Supply Operation: +/- 2.5 to +/-8 Volts
Low Noise: 10 nV/√Hz
Wide Bandwidth: 4 MHz
Unity Gain Stable
APPLICATIONS
Multi-pole Filters
Sensors
Medical Equipment
Consumer Audio
Photodiode amplification
ADC driver
GENERAL DESCRIPTION
The AD8661, AD8662 and AD8664 are single, dual and quad
rail-to-rail output single supply amplifiers that use Analog
Devices’ patented DigiTrim® trimming technique to achieve
low offset voltage. The AD8661 family features an extended
operating range with supply voltages up to 16 V. They also
feature low input bias currents, wide signal bandwidth, and low
input voltage and current noise.
The combination of low offsets, very low input bias currents,
and wide supply range make these amplifiers useful in a wide
variety of applications normally associated with much higher
priced JFET amplifiers. Systems utilizing high impedance
sensors, such as photo-diodes benefit from the combination of
low input bias current, low noise, low offset and bandwidth.
The wide operating voltage range matches today’s high
performance ADCs and DACs. Audio applications and
medical monitoring equipment can take advantage of the high
input impedance, low voltage and current noise, wide
bandwidth and the lack of “popcorn” noise (found in many
other low input bias current amplifiers).
The AD8661, AD8662 and AD8664 are specified over the
extended industrial (-40° to +125°C) temperature range. The
AD8661, single, is available in the tiny 8-lead LFCSP (MO-
220) 3mm x 3mm and 8-lead SOIC package. The AD8662,
dual, is available in the 8-lead micro-SOIC and narrow SOIC
surface mount packages. The AD8664, quad, is available in
14-lead TSSOP and narrow 14-pin SOIC packages.
LFCSP, MSOP and TSSOP versions are available in tape and
reel only.
Operational Amplifiers
AD8661/AD8662/AD8664
PIN CONFIGURATIONS
8-Lead LFCSP
(CP-8)
3mm x 3mm
8-Lead SO
(R-8)
AD8661
8-Lead SO
(R-8)
AD8662
8-Lead MSOP
(RM-8)
AD8662
14-Lead TSSOP
(RU-14)
AD8664
14-Lead SO
(R-14)
AD8664
REV. PrA 10/5/2004
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its use,
nor for any infringements of patents or other rights of third parties that may
result from its use. No license is granted by implication or otherwise under any
patent or patent rights of Analog Devices. Trademarks and registered
trademarks are the property of their respective companies.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700 www.analog.com
Fax: 781/326-8703 © 2004 Analog Devices, Inc. All rights reserved.
Page 2
Preliminary Technical Data
AD8661/AD8662/AD8664
ELECTRICAL CHARACTERISTICS (V
noted)
Parameter
INPUT CHARACTERISTICS
Offset Voltage VOS V
V
-40°< TA < +85°C 650 µV
-40°< TA < +125°C 750 µV
Input Bias Current IB 0.3 1 pA
-40°< TA < +85°C 50 pA
-40°< TA < +125°C 300 pA
Input Offset Current IOS 0.2 TBD pA
-40°< TA < +85°C 20 pA
-40°< TA < +125°C 75 pA
Input Voltage Range tbd 3.0 V
Common-Mode Rejection Ratio CMRR VCM = 0.1V to 3.0V 80 95 dB
Large Signal Voltage Gain AVO R
Offset Voltage Drift ∆VOS/∆T 3 10 µV/°C
OUTPUT CHARACTERISTICS
Output Voltage High VOH I
I
-40°C < TA < +125°C 4.75 V
Output Voltage Low VOL I
V
-40°C < TA < +125°C 150 mV
Output Current I
Closed Loop Output Impedance Z
POWER SUPPLY
Power Supply Rejection Ratio PSRR VS = 5 V to 16 V 80 95 dB
Supply Current/Amplifier ISY V
-40°< TA < +125°C 2.0 mA
DYNAMIC PERFORMANCE
Slew Rate SR RL =10 kΩ 3 V/µs
Settling Time ts To 0.1%, 0 V to 1V step <1 µs
Gain Bandwidth Product GBP 4 MHz
Phase Margin Øo CL = 15 pF 60
degrees
NOISE PERFORMANCE
Peak-to-Peak Noise en p-p f=0.1Hz to 10 Hz 2.5 µV p-p
Voltage Noise Density e
Voltage Noise Density e
Current Noise Density i
Symbol Conditions Min Typ Max Units
= 8V, VCM = 3V 75 µV
SY
= 0.1V to 3.0V 30 300 µV
CM
= 10 kΩ VO= 0.5V to 4.5V 70 100 V/mV
L
= 1mA 4.80 4.85 V
L
= 10mA 4.80 4.85 V
L
= 1mA 60 120 mV
L
I
OL
±19 mA
OUT
f=1 MHz, AV = 1 65 Ω
OUT
n f=1kHz 12
n f=10kHz 10
n f=1kHz 0.1
= 1mA 60 120 mV
L
= 0V 1.2 1.8 mA
O
=+5.0V, VCM = VS/2, TA=+25°C unless otherwise
S
nV/√Hz
nV/√Hz
pA/√Hz
-2- Rev PrA 10/5/04
Page 3
Preliminary Technical Data
AD8661/AD8662/AD8664
ELECTRICAL CHARACTERISTICS (V
Parameter
INPUT CHARACTERISTICS
Offset Voltage VOS V
V
-40°< TA < +85°C 650 µV
-40°< TA < +125°C 750 µV
Input Bias Current IB 0.3 1 pA
-40°< TA < +85°C 50 pA
-40°< TA < +125°C 300 pA
Input Offset Current IOS 0.2 TBD pA
-40°< TA < +85°C 20 pA
-40°< TA < +125°C 75 pA
Input Voltage Range tbd 6 V
Common-Mode Rejection Ratio CMRR VCM = -8.1V to +6.0V 80 95 dB
Large Signal Voltage Gain AVO R
Offset Voltage Drift ∆VOS/∆T 3 10 µV/°C
OUTPUT CHARACTERISTICS
Output Voltage High VOH I
I
-40°C < TA < +125°C 7.4 V
Output Voltage Low VOL I
I
-40°C < TA < +125°C -7.5 mV
Output Current I
Closed Loop Output Impedance Z
POWER SUPPLY
Power Supply Rejection Ratio PSRR VS = 5V to 16V 80 95 dB
Supply Current/Amplifier ISY V
-40°< TA < +125°C 2.0 mA
DYNAMIC PERFORMANCE
Slew Rate SR RL =10 kΩ 3 V/µs
Settling Time ts To 0.1%, 0 V to 1V step <1 µs
Gain Bandwidth Product GBP 4 MHz
Phase Margin Øo CL = 15 pF 60 degrees
NOISE PERFORMANCE
Peak-to-Peak Noise en p-p f=0.1Hz to 10 Hz 2.5 µV p-p
Voltage Noise Density e
Voltage Noise Density e
Current Noise Density i
Symbol Conditions Min Typ Max Units
= 8V, VCM = 3V 75 µV
SY
= -8.1V to +6.0V 30 300 µV
CM
=10 kΩ VO= -7.5V to+7.5V 70 85 V/mV
L
= 1mA 7.90 7.95 V
L
= 10mA 7.6 7.7 V
L
= 1mA -7.97 -7.93 mV
L
= 10mA -7.8 -7.7 mV
L
±140 mA
OUT
f=1 MHz, AV = 1 45 Ω
OUT
= 0V 1.5 1.8 mA
O
n f=1kHz 12
n f=10kHz 10
n f=1kHz 0.1
=±8.0V, VCM = 0, TA=+25°C unless otherwise noted)
S
nV/√Hz
nV/√Hz
pA/√Hz
-3- Rev PrA 10/5/04
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Preliminary Technical Data
AD8661/AD8662/AD8664
ABSOLUTE MAXIMUM RATINGS
Supply voltage.........................................................................+18V
Input Voltage....................................................................Gnd to Vs
Differential Input Voltage .......................................................±18V
Output Short-Circuit Duration to Gnd
Storage Temperature Range
R, CP, RM, RU Package................................-65°C to +150°C
Operating Temperature Range
AD8661/AD8662/AD8664............................-40°C to +125°C
Junction Temperature Range
R, CP, RM, RU Package................................-65°C to +150°C
Lead Temperature Range (Soldering, 60 Sec)............. +300°C
1
2
.....Observe Derating Curves
ORDERING GUIDE
Temperature
Model
AD8661ACP -40°C to +125°C 8-Pin LFCSP CP-8
AD8661ARZ -40°C to +125°C 8-Pin SOIC R-8
AD8662ARMZ -40°C to +125°C 8-Pin micro-SOIC RM-8
AD8662ARZ -40°C to +125°C 8-Pin SOIC R-8
AD8664ARZ -40°C to +125°C 14-Pin SOIC R-14
AD8664ARUZ -40°C to +125°C 14-Pin TSSOP RU-14
Range
Package Type θJA θ
8-Pin LFCSP (CP) -- °C/W
8-Pin microSOIC (RM) 210 45 °C/W
8-Pin SOIC (R) 158 43 °C/W
14-Pin SOIC (R) 120 36 °C/W
14-Pin TSSOP (RU) 180 35 °C/W
NOTES
1
Absolute maximum ratings apply at 25°C, unless otherw ise noted.
2
θJA is specified for the worst-case conditions, i.e., θJAis specified for device soldered
in circuit board for surface mount packages.
Package
Description
Package
Option
JC Units
Branding
Information
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 1500 V
readily accumulate on the human body and test equipment and can discharge without
detection. Although this device features proprietary ESD protection circuitry, permanent
damage may occur on devices subjected to high-energy electrostatic discharges.
Therefore, proper ESD precautions are recommended to avoid performance degradation or
loss of functionality.
-4- Rev PrA 10/5/04
Page 5
Preliminary Technical Data
PR05200-0-10/04(PRA)
OUTLINE DIMENSIONS
AD8661/AD8662/AD8664
8-Lead LFCSP
(CP-8 Suffix)
14-Lead TSSOP
(RU-14)
8-Lead SOIC
(RM-8)
8-Lead SO
(R-8)
14-Lead SO
(R-14)
-5- Rev PrA 10/5/04
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