Bandwidth: 50 MHz @ 5 V
Low noise: 4.5 nV/√Hz
Offset voltage: 100 μV typical, specified over
entire common-mode range
Slew rate: 41 V/μs
Rail-to-rail input and output swing
Input bias current: 1 pA
Single-supply operation: 2.7 V to 5.5 V
Space-saving MSOP and SOIC_N packaging
APPLICATIONS
Optical communications
Laser source drivers/controllers
Broadband communications
High speed ADCs and DACs
Microwave link interface
Cell phone PA control
Video line drivers
Audio
The AD865x family consists of high precision, low noise, low
distortion, rail-to-rail CMOS operational amplifiers that run
from a single-supply voltage of 2.7 V to 5.5 V.
The AD865x family is made up of rail-to-rail input and output
mplifiers with a gain bandwidth of 50 MHz and a typical
a
voltage offset of 100 μV across common mode from a 5 V
supply. It also features low noise—4.5 nV/√Hz.
The AD865x family can be used in communications
ap
plications, such as cell phone transmission power control, fiber
optic networking, wireless networking, and video line drivers.
The AD865x family features the newest generation of DigiTrim®
ackage trimming. This new generation measures and
in-p
corrects the offset over the entire input common-mode range,
providing less distortion from V
variation than is typical of
OS
other rail-to-rail amplifiers. Offset voltage and CMRR are both
specified and guaranteed over the entire common-mode range
as well as over the extended industrial temperature range.
The AD865x family is offered in the narrow 8-lead SOIC
ackage and the 8-lead MSOP package. The amplifiers are
p
specified over the extended industrial temperature range
(−40°C to +125°C).
Rev. C
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
AD8651 0 V ≤ VCM ≤ 2.7 V 100 350 V
–40°C ≤ TA ≤ +85°C, 0 V ≤ VCM ≤ 2.7 V 1.4 mV
–40°C ≤ TA ≤ +125°C, 0 V ≤ VCM ≤ 2.7 V 1.6 mV
AD8652 0 V ≤ VCM ≤ 2.7 V 90 300 V
–40°C ≤ TA ≤ +125°C, 0 V ≤ VCM ≤ 2.7 V 0.4 1.3 mV
Offset Voltage Drift TCV
Input Bias Current I
–40°C ≤ TA ≤ +125°C 600 pA
Input Offset Current I
–40°C ≤ TA ≤ +85°C 30 pA
–40°C ≤ TA ≤ +125°C 600 pA
Input Voltage Range V
Common-Mode Rejection Ratio CMRR
AD8651 V+ = 2.7 V, –0.1 V < VCM < +2.8 V 75 95 dB
–40°C ≤ TA ≤ +85°C, –0.1 V < VCM < +2.8 V 70 88 dB
–40°C ≤ TA ≤ +125°C, –0.1 V < VCM < +2.8 V 65 85 dB
AD8652 V+ = 2.7 V, –0.1 V < VCM < +2.8 V 77 95 dB
–40°C ≤ TA ≤ +125°C, –0.1 V < VCM < +2.8 V 73 90 dB
Large Signal Voltage Gain A
R
R
OUTPUT CHARACTERISTICS
Output Voltage High V
Output Voltage Low V
Short-Circuit Limit I
Sinking 80 mA
Output Current I
POWER SUPPLY
Power Supply Rejection Ratio PSRR VS = 2.7 V to 5.5 V, VCM = 0 V 76 94 dB
–40°C ≤ TA ≤ +125°C 74 93 dB
Supply Current I
AD8651 IO = 0 9 12 mA
–40°C ≤ TA ≤ +125°C 14.5 mA
AD8652 IO = 0 17.5 19.5 mA
–40°C ≤ TA ≤ +125°C 22.5 mA
INPUT CAPACITANCE C
Differential 6 pF
Common Mode 9 pF
DYNAMIC PERFORMANCE
Slew Rate SR G = 1, RL = 10 kΩ 41 V/s
Gain Bandwidth Product GBP G = 1 50 MHz
Settling Time, 0.01% G = ±1, 2 V step 0.2 s
Overload Recovery Time VIN × G = 1.48 V
Total Harmonic Distortion + Noise THD + N G = 1, RL = 600 Ω, f = 1 kHz, VIN = 2 V p-p 0.0006 %
NOISE PERFORMANCE
Voltage Noise Density e
f = 100 kHz 4.5 nV/√Hz
Current Noise Density i
OS
OS
B
OS
CM
VO
OH
OL
SC
O
SY
IN
n
n
4 V/°C
1 10 pA
1 10 pA
–0.1 +2.8 V
RL = 1 kΩ, 200 mV < VO < 2.5 V 100 115 dB
= 1 kΩ, 200 mV < VO < 2.5 V, TA = 85°C 100 114 dB
L
= 1 kΩ, 200 mV < VO < 2.5 V, TA = 125°C 95 108 dB
L
IL = 250 A, –40°C ≤ TA ≤ +125°C 2.67 V
IL = 250 A, –40°C ≤ TA ≤ +125°C 30 mV
Sourcing 80 mA
–40°C ≤ TA ≤ +85°C, 0 V ≤ VCM ≤ 5 V 1.4 mV
–40°C ≤ TA ≤ +125°C, 0 V ≤ VCM ≤ 5 V 1.7 mV
AD8652 0 V ≤ VCM ≤ 5 V 90 300 V
–40°C ≤ TA ≤ +125°C, 0 V ≤ VCM ≤ 5 V 0.4 1.4 mV
Offset Voltage Drift TCV
Input Bias Current I
–40°C ≤ TA ≤ +85°C 30 pA
–40°C ≤ TA ≤ +125°C 600 pA
Input Offset Current I
–40°C ≤ TA ≤ +85°C 30 pA
–40°C ≤ TA ≤ +125°C 600 pA
Input Voltage Range V
Common-Mode Rejection Ratio CMRR
AD8651 0.1 V < VCM < 5.1 V 80 95 dB
–40°C ≤ TA ≤ +85°C, 0.1 V < VCM < 5.1 V 75 94 dB
–40°C ≤ TA ≤ +125°C, 0.1 V < VCM < 5.1 V 70 90 dB
AD8652 0.1 V < VCM < 5.1 V 84 100 dB
–40°C ≤ TA ≤ +125°C, 0.1 V < VCM < 5.1 V 76 95 dB
Large Signal Voltage Gain A
R
R
OUTPUT CHARACTERISTICS
Output Voltage High V
Output Voltage Low V
Short-Circuit Limit I
Sinking 80 mA
Output Current I
POWER SUPPLY
Power Supply Rejection Ratio PSRR VS = 2.7 V to 5.5 V, V
–40°C ≤ TA ≤ +125°C 74 93 dB
Supply Current I
AD8651 IO = 0 9.5 14.0 mA
–40°C ≤ TA ≤ +125°C 15 mA
AD8652 IO = 0 17.5 20.0 mA
–40°C ≤ TA ≤ +125°C 23.5 mA
INPUT CAPACITANCE C
Differential 6 pF
Common Mode 9 pF
DYNAMIC PERFORMANCE
Slew Rate SR G = 1, RL = 10 kΩ 41 V/µs
Gain Bandwidth Product GBP G = 1 50 MHz
Settling Time, 0.01% G = ±1, 2 V step 0.2 s
Overload Recovery Time VIN × G = 1.2 V
Total Harmonic Distortion + Noise THD + N G = 1, RL = 600 Ω, f = 1 kHz, VIN = 2 V p-p 0.0006 %
NOISE PERFORMANCE
Voltage Noise Density e
f = 100 kHz 4.5 nV/√Hz
Current Noise Density i
OS
OS
B
OS
CM
VO
OH
OL
SC
O
SY
IN
n
n
4 V/°C
1 10 pA
1 10 pA
–0.1 +5.1 V
RL = 1 kΩ, 200 mV < VO < 4.8 V 100 115 dB
= 1 kΩ, 200 mV < VO < 4.8 V, TA = 85°C 98 114 dB
L
= 1 kΩ, 200 mV < VO < 4.8 V, TA = 125°C 95 111 dB
L
IL = 250 µA, –40°C ≤ TA ≤ +125°C 4.97 V
IL = 250 µA, –40°C ≤ TA ≤ +125°C 30 mV
Sourcing 80 mA
40 mA
= 0 V 76 94 dB
CM
+
f = 10 kHz 5 nV/√Hz
f = 10 kHz 4 fA/√Hz
0.1 s
Rev. C | Page 4 of 20
Page 5
AD8651/AD8652
www.BDTIC.com/ADI
ABSOLUTE MAXIMUM RATINGS
Absolute maximum ratings apply at 25°C, unless otherwise noted.
Table 3.
Parameter Rating
Supply Voltage 6.0 V
Input Voltage GND to V
Differential Input Voltage ±6.0 V
Output Short-Circuit Duration to GND Indefinite
Electrostatic Discharge (HBM) 4000 V
Storage Temperature Range
RM, R Package −65°C to +150°C
Operating Temperature Range −40°C to +125°C
Junction Temperature Range
RM, R Package −65°C to +150°C
Lead Temperature (Soldering, 10 sec) 300°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
+ 0.3 V
S
THERMAL RESISTANCE
JA is specified for the worst-case conditions, that is, a device
soldered in a circuit board for surface-mount packages.
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
Rev. C | Page 5 of 20
Page 6
AD8651/AD8652
www.BDTIC.com/ADI
TYPICAL PERFORMANCE CHARACTERISTICS
60
50
VS = ±2.5V
V
= 0V
CM
100
VS = 5V
80
NUMBER OF AMPLIF IERS
(µV)
OS
V
–100
–200
300
200
100
40
30
20
10
0
–200
–160
–120
–80
–40
VOS (µV)
0
Figure 5. Input Offset Voltage Distribution
VS = ±2.5V
V
= 0V
CM
0
60
40
(µV)
OS
V
20
0
–20
40
80
120
160
200
03301-005
0123456
COMMON-MODE VOLTAGE (V)
3301-008
Figure 8. Input Offset Voltage vs. Common-Mode Voltage
500
VS = ±2.5V
400
300
200
INPUT BIAS CURRENT (pA)
100
–300
–50050100150
TEMPERATURE (°C)
Figure 6. Input Offset Voltage vs. Temperature
60
50
40
30
20
NUMBER OF AMPLIFI ERS
10
0
01234567891011
TCVOS(µV/°C)
Figure 7. TCV
OS
VS= ±2.5V
V
T
Distribution
=0V
CM
: –40°C TO +125°C
A
0
3301-006
040120100806020
TEMPERATURE (°C)
140
3301-009
Figure 9. Input Bias Current vs. Temperature
10
8
6
4
SUPPLY CURRENT (mA)
2
0
025431
3301-007
SUPPLY VOLTAGE (V)
6
3301-010
Figure 10. Supply Current vs. Supply Voltage
Rev. C | Page 6 of 20
Page 7
AD8651/AD8652
V
V
www.BDTIC.com/ADI
12
VS = ±2.5V
11
2.50
2.00
VS = 5V
I
= 250µA
L
10
9
8
SUPPLY CURRENT (mA)
7
6
–50050100150
TEMPERATURE (°C)
Figure 11. Supply Current vs. Temperature
500
400
300
) (mV)
OUT
–
200
SY
(
100
V
OH
V
OL
VS=±2.5V
1.50
1.00
OUTPUT SWING LOW (mV)
0.50
0
3301-011
–50050100150
TEMPERATURE (°C)
03301-014
Figure 14. Output Voltage Swing Low vs. Temperature
100
80
60
40
CMRR (dB)
20
VS = ±2.5V
0
02040601080
CURRENT LOAD (mA)
Figure 12. Output Voltage to Supply Rail vs. Load Current
4.997
4.996
4.995
4.994
4.993
4.992
OUTPUT SWING HIGH (V)
4.991
4.990
–50050100150
TEMPERATURE (°C)
VS = 5V
I
L
Figure 13. Output Voltage Swing High vs. Temperature
= 250µA
0
3301-012
3301-013
0
101k10M1M100k10k100
FREQUENCY (Hz)
Figure 15. CMRR vs. Frequency
110
105
100
CMRR (dB)
95
90
–50050100150
TEMPERATURE (°C)
VS = ±2.5V
Figure 16. CMRR vs. Temperature
3301-015
3301-016
Rev. C | Page 7 of 20
Page 8
AD8651/AD8652
www.BDTIC.com/ADI
100
97
94
100
VS = ±2.5V
91
CMRR (dB)
88
85
82
–50050100150
TEMPERATURE (°C)
Figure 17. CMRR vs. Temperature
100
80
60
40
PSRR (dB)
20
0
1101001k10k100k1M10M 100M
+PSRR
–PSRR
FREQUENCY ( Hz)
Figure 18. PSRR vs. Frequency
100
95
VS = ±2.5V
VS = ±2.5V
10
VOLTAGE NOISE DENSITY (nV/ √Hz)
1
3301-017
101k100k10k100
FREQUENCY ( Hz)
3301-020
Figure 20. Voltage Noise Density vs. Frequency
80
60
40
20
CURRENT NOISE DENSITY (f A/√Hz)
0
3301-018
1001k100k10k
FREQUENCY ( Hz)
VS = ±2.5V
3301-021
Figure 21. Current Noise Density vs. Frequency
VS = ±2.5V
V
= 6.4V
IN
V
IN
V
OUT
90
PSRR (dB)
85
80
–50050100150
TEMPERATURE (°C)
Figure 19. PSRR vs. Temperature
3301-019
0
VOLTAGE (1V/DIV)
Figure 22. No Phase Reversal
Rev. C | Page 8 of 20
TIME (200µs/DIV)
3301-022
Page 9
AD8651/AD8652
www.BDTIC.com/ADI
140
120
100
80
60
40
OPEN-LOOP GAIN (dB)
20
0
–20
101001k10k100k1M10M100M
FREQUENCY ( Hz)
Figure 23. Open-Loop Gain and Phase vs. Frequency
117
116
115
114
OPEN-LOOP GAIN (dB)
113
VS = ±2.5V
VS = ±2.5V
R
= 1kΩ
L
0
–45
–90
–135
–180
PHASE (Degrees)
03301-023
60
40
G = 100
20
G = 10
0
G = 1
CLOSED-LOOP GAIN (dB)
–20
–40
5k
50k5M500k50M300M
FREQUENCY ( Hz)
VS = ±2.5V
= 1MΩ
R
L
= 47pF
C
L
3301-026
Figure 26. Closed-Loop Gain vs. Frequency
6
5
4
3
2
MAXIMUM OUTPUT SWING (V)
1
VS = 5V
VS = 2.7V
112
–50050100150
TEMPERATURE (°C)
Figure 24. Open-Loop Gain vs. Temperature
140
I
=250µA
130
120
110
100
90
OPEN-LOOP GAIN (dB)
80
70
60
0100150250200
50
OUTPUT VOLTAGE SWING FROM THE RAILS (mV)
L
IL=2.5mA
IL=4.2mA
V
S
Figure 25. Open-Loop Gain vs. Output Voltage Swing
=±2.5V
0
100k100M10M1M
03301-024
FREQUENCY ( Hz)
3301-027
Figure 27. Maximum Output Swing vs. Frequency
VS = ±2.5V
= 47pF
C
L
= 1
A
V
VOLTAGE (1V/DIV)
03301-025
TIME (100µ s/DIV)
3301-028
Figure 28. Large Signal Response
Rev. C | Page 9 of 20
Page 10
AD8651/AD8652
A
2
V
www.BDTIC.com/ADI
VS = ±2.5V
V
= 200mV
IN
A
= 1
V
–2.5V
VS = ±2.5V
= 200mV
V
IN
0V
GAIN = –15
OUTPUT
VOLTAGE (100mV/DIV)
TIME (10µ s/DIV)
Figure 29. Small Signal Response
30
VS = ±2.5V
V
= 200mV
IN
A
= 1
25
V
L OVERSHOOT (%)
SMALL SIGN
20
15
10
5
0
0206050403010
CAPACITANCE (pF)
–OS
Figure 30. Small Signal Overshoot vs. Load Capacitance
2.5V
+OS
VS = ±2.5V
V
IN
GAIN = –15
= 200mV
3301-029
70
3301-030
00m
0V
40
VS = ±2.5V
30
20
10
OUTPUT IMPEDANCE (Ω)
0
101k100k10k100
60
50
INPUT
TIME (200ns/DIV)
Figure 32. Positive Overload Recovery Time
GAIN = 10
GAIN = 1
GAIN = 100
FREQUENCY ( Hz)
Figure 33. Output Imped
ance vs. Frequency
VS = ±1.35V
= 0V
V
CM
3301-032
3301-033
–200mV
0V
0V
TIME (200n s/DIV)
3301-031
NUMBER OF AMPLIF IERS
40
30
20
10
0
–200
–160
–120
–80
Figure 31. Negative Overload Recovery Time
Figure 34. Input Offset Voltage Distribution
Rev. C | Page 10 of 20
–40
VOS (µV)
0
40
80
120
160
200
03301-034
Page 11
AD8651/AD8652
V
V
www.BDTIC.com/ADI
300
200
VS = ±1.35V
= 0V
V
CM
500
400
VS= ±1.35V
100
0
(µV)
OS
V
–100
–200
–300
–50050100150
TEMPERATURE (°C)
Figure 35. Input Offset Voltage vs. Temperature
80
60
40
20
0
INPUT OFFSET VOLTAGE (µV)
VS = 2.7V
300
) (mV)
OUT
–
200
SY
(
100
0
3301-035
02040601080
V
OH
CURRENT LOAD (mA)
V
OL
0
3301-038
Figure 38. Output Voltage to Supply Rail vs. Load Current
OUTPUT SWING HIGH (V)
2.697
2.696
2.695
2.694
2.693
2.692
2.691
VS = 2.7V
= 250µA
I
L
–20
012
INPUT COMMON-MODE VOLTAGE (V)
Figure 36. Input Offset Voltage vs. Common-Mode Voltage
11
VS = ±1.35V
10
9
8
SUPPLY CURRENT (mA)
7
6
–50050100150
TEMPERATURE (°C)
Figure 37. Supply Current vs. Temperature
3
3301-036
3301-037
2.690
–50050100150
TEMPERATURE (°C)
Figure 39. Output Voltage Swing High vs. Temperature
3.00
2.50
2.00
1.50
1.00
OUTPUT SWING LOW (mV)
0.50
0
–50050100150
TEMPERATURE (°C)
Figure 40. Output Voltage Swing Low vs. Temperature
VS = 2.7V
= 250µA
I
L
3301-039
3301-040
Rev. C | Page 11 of 20
Page 12
AD8651/AD8652
A
V
www.BDTIC.com/ADI
VS = ±1.35V
= 1
A
V
30
25
20
VS = ±1.35V
= 200mV
V
IN
15
L OVERSHOOT (%)
VOLTAGE (1V/DIV)
TIME (200µs/DIV)
3301-041
Figure 41. No Phase Reversal
VS = ±1.35V
= 47pF
C
L
= 1
A
V
VOLTAGE (500mV/DIV)
TIME (100µs/DIV)
3301-042
Figure 42. Large Signal Response
10
5
SMALL SIGN
0
0206050403010
CAPACITANCE (pF)
Figure 44. Small Signal Overshoot vs. Load Capacitance
1.35V
0V
0V
–200mV
Figure 45. Negative Overload Recovery Time
–OS
TIME (200n s/DIV)
+OS
VS = ±1.35V
V
= 200mV
IN
GAIN = –10
70
3301-044
3301-045
VS = ±1.35V
= 200mV
V
IN
= 47pF
C
L
= 1
A
V
VOLTAGE (100mV/DIV)
TIME (10µ s/DIV)
3301-043
Figure 43. Small Signal Response
0V
–1.35V
200m
0V
TIME (200n s/DIV)
Figure 46. Positive Overload Recovery Time
VS = ±1.35V
V
= 200mV
IN
GAIN = –10
03301-046
Rev. C | Page 12 of 20
Page 13
AD8651/AD8652
R
A
www.BDTIC.com/ADI
100
VS = ±1.35V
80
120
118
VS = ±1.35V
R
= 1kΩ
L
60
40
CMRR (dB)
20
0
101k10M1M100k10k100
FREQUENCY (Hz)
Figure 47. CMRR vs. Frequency
100
80
60
40
PSRR (dB)
20
0
1101001k10k100k1M10M
+PSRR
–PSRR
FREQUENCY (Hz)
Figure 48. PSRR vs. Frequency
140
120
100
80
60
40
OPEN-LOOP GAIN (dB)
20
0
–20
101001k10k100k1M10M100M
FREQUENCY (Hz)
Figure 49. Open-Loop Gain and Phase vs. Frequency
VS = ±1.35V
VS = ±1.35V
0
–45
–90
–135
–180
116
114
(dB)
VO
A
112
110
108
3301-047
–50050100150
TEMPERATURE (°C)
3301-050
Figure 50. Open-Loop Gain vs. Temperature
60
40
G = 100
20
G = 10
0
G = 1
CLOSED-LOOP GAIN (dB)
–20
–40
3301-048
5k
50k5M500k50M300M
FREQUENCY ( Hz)
VS = ±1.35V
R
= 1MΩ
L
C
= 47pF
L
3301-051
Figure 51. Closed-Loop Gain vs. Frequency
0
–20
V
–40
TION (dB)
–60
–80
PHASE (Degrees)
03301-049
CHANNEL SEPA
–100
–120
–140
28mV p-p
IN
+2.5V
V+
V–
–2.5V
FREQUENCY (Hz)
R1
10kΩ
V–
V
OUT
V+
R2
100Ω
VS = ±2.5V
10M1001k10k100k1M
03301-052
Figure 52. Channel Separation vs. Frequency.
Rev. C | Page 13 of 20
Page 14
AD8651/AD8652
www.BDTIC.com/ADI
APPLICATIONS
THEORY OF OPERATION
The AD865x family consists of voltage feedback, rail-to-rail
input and output precision CMOS amplifiers that operate from
2.7 V to 5.5 V of power supply voltage. These amplifiers use
Analog Devices, Inc. DigiTrim technology to achieve a higher
degree of precision than is available from most CMOS
amplifiers. DigiTrim technology, used in a number of Analog
Devices amplifiers, is a method of trimming the offset voltage of
the amplifier after it has been assembled. The advantage of
post-package trimming is that it corrects any offset voltages
caused by the mechanical stresses of assembly.
The AD865x family is available in standard op amp pinouts,
making Dig
stage of the amplifiers is a true rail-to-rail architecture, allowing
the input common-mode voltage range of the op amp to extend
to both positive and negative supply rails. The open-loop gain
of the AD865x with a load of 1 kΩ is typically 115 dB.
The AD865x can be used in any precision op amp application.
The a
voltages within the power supply. With voltage noise of
4.5 nV/√Hz and –105 dB distortion for 10 kHz, 2 V p-p signals,
the AD865x is a great choice for high resolution data
acquisition systems. Their low noise, sub-pA input bias current,
precision offset, and high speed make them superb preamps for
fast photodiode applications. The speed and output drive
capabilities of the AD865x also make the amplifiers useful in
video applications.
Rail-to-Rail Output Stage
The voltage swing of the output stage is rail-to-rail and is
achieved by using an NMOS and PMOS transistor pair connected in a common source configuration. The maximum
output voltage swing is proportional to the output current, and
larger currents will limit how close the output voltage can get to
the proximity of the output voltage to the supply rail. This is a
characteristic of all rail-to-rail output amplifiers. With 40 mA of
output current, the output voltage can reach within 5 mV of the
positive and negative rails. At light loads of >100 kΩ, the output
swings within ~1 mV of the supplies.
iTrim completely transparent to the user. The input
mplifiers do not exhibit phase reversal for common-mode
The NMOS and PMOS input stages are separately trimmed
usin
g DigiTrim to minimize the offset voltage in both differential pairs. Both NMOS and PMOS input differential pairs are
active in a 500 mV transition region when the input commonmode voltage is approximately 1.5 V below the positive supply
voltage. A special design technique improves the input offset
voltage in the transition region that traditionally exhibits a
slight V
variation. As a result, the common-mode rejection
OS
ratio is improved within this transition band. Compared to the
Burr Brown OPA350 amplifier, shown in
AD865x, sh
s
hift across the entire input common-mode range, including the
own in Figure 54, exhibits much lower offset voltage
Figure 53, the
transition region.
600
400
200
0
(µV)
OS
V
–200
–400
–600
0
Figure 53. Input Offset Distribution over Common-Mode
214356
COMMON-MODE VOLTAGE (V)
Vo
ltage for the OPA350
3301-053
600
400
200
0
(µV)
OS
V
–200
Rail-to-Rail Input Stage
The input common-mode voltage range of the AD865x extends
to both positive and negative supply voltages. This maximizes
the usable voltage range of the amplifier, an important feature
for single-supply and low voltage applications. This rail-to-rail
input range is achieved by using two input differential pairs, one
NMOS and one PMOS, placed in parallel. The NMOS pair is active
–400
–600
0
Figure 54. Input Offset Distribution over Common-Mode
21435
COMMON-MODE VOLTAGE (V)
Input Protection for the AD865x
at the upper end of the common-mode voltage range, and the
PMOS pair is active at the lower end of the common-mode range.
Rev. C | Page 14 of 20
6
3301-061
Page 15
AD8651/AD8652
www.BDTIC.com/ADI
Input Protection
As with any semiconductor device, if a condition exists for the
input voltage to exceed the power supply, the device input
overvoltage characteristic must be considered. The inputs of the
AD865x family are protected with ESD diodes to either power
supply. Excess input voltage energizes internal PN junctions in
the AD865x, allowing current to flow from the input to the
supplies. This results in an input stage with picoamps of input
current that can withstand up to 4000 V ESD events (human
body model) with no degradation.
Excessive power dissipation through the protection devices
troys or degrades the performance of any amplifier. Differential
des
voltages greater than 7 V result in an input current of approximately
(| V
– V
CC
| – 0.7 V)/RI, where RI is the resistance in series with
EE
the inputs. For input voltages beyond the positive supply, the
input current is approximately (V
– VCC – 0.7)/RI. For input
IN
voltages beyond the negative supply, the input current is about
(V
– VEE + 0.7)/RI. If the inputs of the amplifier sustain
IN
differential voltages greater than 7 V or input voltages beyond
the amplifier power supply, limit the input current to 10 mA by
using an appropriately sized input resistor (R
), as shown in
I
Figure 55.
(| VCC–VEE|–0.7V)
R
>
I
FOR LARG E | V
30mA
–VIN+
R
|
CC–VEE
Figure 55. Input Protection Method
R
+
AD865x
–
I
R
+V
(V
>
I
(V
>
I
FOR V
SUPPLY VOLTAGES
O
IN–VEE
30mA
IN–VEE
30mA
IN
–0.7V)
+0.7V)
BEYOND
03301-054
Overdrive Recovery
Overdrive recovery is defined as the time it takes for the output
of an amplifier to come off the supply rail after an overload signal is
initiated. This is usually tested by placing the amplifier in a closedloop gain of 15 with an input square wave of 200 mV p-p while the
amplifier is powered from either 5 V or 3 V. The AD865x family
has excellent recovery time from overload conditions (see
and
Figure 32). The output recovers from the positive supply rail
wi
thin 200 ns at all supply voltages. Recovery from the negative rail
Figure 31
is within 100 ns at 5 V supply.
LAYOUT, GROUNDING, AND BYPASSING
CONSIDERATIONS
Power Supply Bypassing
Power supply pins can act as inputs for noise, so care must be
taken that a noise-free, stable dc voltage is applied. The purpose
of bypass capacitors is to create low impedances from the supply
to ground at all frequencies, thereby shunting or filtering most
of the noise.
Bypassing schemes are designed to minimize the supply
pedance at all frequencies with a parallel combination of
im
capacitors of 0.1 μF and 4.7 μF. Chip capacitors of 0.1 μF (X7R
or NPO) are critical and should be as close as possible to the
amplifier package. The 4.7 μF tantalum capacitor is less critical
for high frequency bypassing, and, in most cases, only one is
needed per board at the supply inputs.
Grounding
A ground plane layer is important for densely packed PC
boards to spread the current-minimizing parasitic inductances.
However, an understanding of where the current flows in a
circuit is critical to implementing effective high speed circuit
design. The length of the current path is directly proportional to
the magnitude of parasitic inductances and, therefore, the high
frequency impedance of the path. High speed currents in an
inductive ground return create an unwanted voltage noise.
The length of the high frequency bypass capacitor leads is
c
ritical. A parasitic inductance in the bypass grounding works
against the low impedance created by the bypass capacitor.
Place the ground leads of the bypass capacitors at the same
physical location. Because load currents also flow from the
supplies, the ground for the load impedance should be at the
same physical location as the bypass capacitor grounds. For the
larger value capacitors, intended to be effective at lower
frequencies, the current return path distance is less critical.
Leakage Currents
Poor PC board layout, contaminants, and the board insulator
material can create leakage currents that are much larger than the
input bias current of the AD865x family. Any voltage differential
between the inputs and nearby traces sets up leakage currents
through the PC board insulator, for example 1 V/100 G = 10 pA.
Similarly, any contaminants on the board can create significant
leakage (skin oils are a common problem).
To significantly reduce leakages, put a guard ring (shield)
round the inputs and the input leads that are driven to the
a
same voltage potential as the inputs. This ensures that there is
no voltage potential between the inputs and the surrounding
area to set up any leakage currents. To be effective, the guard
ring must be driven by a relatively low impedance source and
should completely surround the input leads on all sides, above
and below, using a multilayer board.
Another effect that can cause leakage currents is the charge
ab
sorption of the insulator material itself. Minimizing the
amount of material between the input leads and the guard
ring helps to reduce the absorption. Also, low absorption
materials, such as Teflon® or ceramic, may be necessary in
some instances.
Rev. C | Page 15 of 20
Page 16
AD8651/AD8652
V
2
%
www.BDTIC.com/ADI
Input Capacitance
Along with bypassing and grounding, high speed amplifiers can be
sensitive to parasitic capacitance between the inputs and ground. A
few picofarads of capacitance reduces the input impedance at high
frequencies, which in turn increases the amplifier gain, causing
peaking in the frequency response or oscillations. With the
AD865x, additional input damping is required for stability with
capacitive loads greater than 47 pF with direct input to output
feedback (see the Output Capacitance section).
Output Capacitance
When using high speed amplifiers, it is important to consider
the effects of the capacitive loading on amplifier stability.
Capacitive loading interacts with the output impedance of the
amplifier, causing reduction of the BW as well as peaking and
ringing of the frequency response. To reduce the effects of the
capacitive loading and allow higher capacitive loads, there are
two commonly used methods.
•As shown in Figure 56, place a small value resistor (R
series with the output to isolate the load capacitor from the
amplifier output. Heavy capacitive loads can reduce the
phase margin of an amplifier and cause the amplifier
response to peak or become unstable. The AD865x is able
to drive up to 47 pF in a unity gain buffer configuration
without oscillation or external compensation. However, if
an application requires a higher capacitive load drive when
the AD865x is in unity gain, the use of external isolation
networks can be used. The effect produced by this resistor
is to isolate the op amp output from the capacitive load.
The required amount of series resistance has been
tabulated in Table 5 for different capacitive loads. While
this technique improves the overall capacitive load drive
for the amplifier, its biggest drawback is that it reduces the
output swing of the overall circuit.
CC
U1
3
V
+
IN
2
+
V
AD865x
–
V
–
0
R
S
C
R
L
0
0
Figure 56. Driving Large Capacitive Loads
V
OUT
L
) in
S
03301-055
•Another way to stabilize an op amp driving a large capacitive
load is to use a snubber network, as shown in Figure 57. Because
there is not any isolation resistor in the signal path, this method
has the significant advantage of not reducing the output swing.
The exact values of R
Figure 57, an optimum R
and CS are derived experimentally. In
S
and CS combination for a capacitive
S
load drive ranging from 50 pF to 1 nF was chosen. For this,
R
= 3 Ω and CS = 10 nF were chosen.
S
+
V
+
+
00mV
V
AD865x
–
V
–
–
V
R
S
C
L
C
S
V
OUT
R
L
3301-056
Figure 57. Snubber Network
Settling Time
The settling time of an amplifier is defined as the time it takes
for the output to respond to a step change of input and enter
and remain within a defined error band, as measured relative to
the 50% point of the input pulse. This parameter is especially
important in measurements and control circuits where amplifiers are used to buffer A/D inputs or DAC outputs. The design of
the AD865x family combines a high slew rate and a wide gain
bandwidth product to produce an amplifier with very fast
settling time. The AD865x is configured in the noninverting
gain of 1 with a 2 V p-p step applied to its input. The AD865x
family has a settling time of about 130 ns to 0.01% (2 mV). The
output is monitored with a 10×, 10 M, 11.2 pF scope probe.
THD Readings vs. Common-Mode Voltage
Total harmonic distortion of the AD865x family is well below
0.0004% with any load down to 600 Ω. The distortion is a
function of the circuit configuration, the voltage applied, and
the layout, in addition to other factors. The AD865x family
outperforms its competitor for distortion, especially at
frequencies below 20 kHz, as shown in Figure 58.
)
0.005
0.1
0.05
0.02
0.01
VSY = +3.5V/–1.5V
= 2.0V p-p
V
OUT
Table 5. Optimum Values for Driving Large Capacitive Loads
CL R
S
100 pF 50 Ω
500 pF 35 Ω
1.0 nF 25 Ω
Rev. C | Page 16 of 20
0.002
0.001
THD + NOISE (
0.0005
0.0002
0.0001
205010050020k5k2k1k
OPA350
AD8651
FREQUENCY (Hz)
Figure 58. Total Harmonic Distortion
03301-057
Page 17
AD8651/AD8652
V
www.BDTIC.com/ADI
+3.5V
+
47pF
V
OUT
03301-058
V
2V p-p
AD865x
–
IN
–1.5V
600Ω
Figure 59. THD + N Test Circuit
Driving a 16-Bit ADC
The AD865x family is an excellent choice for driving high
speed, high precision ADCs. The driver amplifier for this type
of application needs low THD + N as well as quick settling time.
Figure 61 shows a complete single-supply data acquisition
olution. The AD865x family drives the AD7685, a 250 kSPS,
s
16-bit data converter.
1
The AD865x is configured in an inverting gain of 1 with a 5 V
single supply. Input of 45 kHz is applied, and the ADC samples
at 250 kSPS. The results of this solution are listed in Tab le 6.
The adva
ntage of this circuit is that the amplifier and ADC can
be powered with the same power supply. For the case of
a noninverting gain of 1, the input common-mode voltage
encompasses both supplies.
1
For more information about the AD7685 data converter, go to
Figure 60. Frequency Response of AD865x Driving a 16-Bit ADC
03301-059
Rev. C | Page 17 of 20
Page 18
AD8651/AD8652
www.BDTIC.com/ADI
OUTLINE DIMENSIONS
3.20
3.00
2.80
PIN 1
0.95
0.85
0.75
0.15
0.00
COPLANARITY
8
1
0.65 BSC
0.38
0.22
0.10
3.20
3.00
2.80
5
4
SEATING
PLANE
5.15
4.90
4.65
1.10 MAX
0.23
0.08
8°
0°
0.80
0.60
0.40
COMPLIANT TO JEDEC STANDARDS MO-187-AA
Figure 62. 8-Lead Mini Small Outline Package [MSOP]
(RM-8)
Dim
ensions shown in millimeters
5.00 (0.1968)
4.80 (0.1890)
4.00 (0.1574)
3.80 (0.1497)
0.25 (0.0098)
0.10 (0.0040)
COPLANARITY
0.10
CONTROLL ING DIMENSI ONS ARE IN MILLIMETERS; INCH DI MENSIONS
(IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR
REFERENCE ONLY AND ARE NOT APPROPRI ATE FOR USE IN DES IGN.
85
1
1.27 (0.0500)
SEATING
PLANE
COMPLIANT TO JEDEC STANDARDS MS-012-A A
BSC
6.20 (0.2440)
5.80 (0.2284)
4
1.75 (0.0688)
1.35 (0.0532)
0.51 (0.0201)
0.31 (0.0122)
8°
0°
0.25 (0.0098)
0.17 (0.0067)
Figure 63. 8-Lead Standard Small Outline Package [SOIC_N]
Nar
row Body
(R-8)
Dimensions shown in millimeters and (inches)
0.50 (0.0196)
0.25 (0.0099)
1.27 (0.0500)
0.40 (0.0157)
45°
060506-A
Rev. C | Page 18 of 20
Page 19
AD8651/AD8652
www.BDTIC.com/ADI
ORDERING GUIDE
Model Temperature Range Package Description Package Option Branding
AD8651ARM-REEL –40°C to +125°C 8-Lead MSOP RM-8 BEA
AD8651ARM-R2 –40°C to +125°C 8-Lead MSOP RM-8 BEA
AD8651ARMZ-REEL1 –40°C to +125°C 8-Lead MSOP RM-8 BEA#
AD8651ARMZ-R21 –40°C to +125°C 8-Lead MSOP RM-8 BEA#
AD8651AR –40°C to +125°C 8-Lead SOIC_N R-8
AD8651AR-REEL –40°C to +125°C 8-Lead SOIC_N R-8
AD8651AR-REEL7 –40°C to +125°C 8-Lead SOIC_N R-8
AD8651ARZ1 –40°C to +125°C 8-Lead SOIC_N R-8
AD8651ARZ-REEL1 –40°C to +125°C 8-Lead SOIC_N R-8
AD8651ARZ-REEL71 –40°C to +125°C 8-Lead SOIC_N R-8
AD8652ARMZ-R21 –40°C to +125°C 8-Lead MSOP RM-8 A05
AD8652ARMZ-REEL1 –40°C to +125°C 8-Lead MSOP RM-8 A05
AD8652ARZ1 –40°C to +125°C 8-Lead SOIC_N R-8
AD8652ARZ-REEL1 –40°C to +125°C 8-Lead SOIC_N R-8
AD8652ARZ-REEL71 –40°C to +125°C 8-Lead SOIC_N R-8
1
Z = Pb-free part; # denotes lead-free product may be top or bottom marked.