Datasheet AD8632ARM, AD8632AR, AD8631ART Datasheet (Analog Devices)

REV. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
a
AD8631/AD8632
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 World Wide Web Site: http://www.analog.com Fax: 781/326-8703 © Analog Devices, Inc., 2000
1.8 V, 5 MHz Rail-to-Rail
Low Power Operational Amplifiers
PIN CONFIGURATIONS
5-Lead SOT-23
(RT Suffix)
1
2
3
5
4
–IN A+IN A
V+
OUT A
AD8631
V–
8-Lead SOIC
(R Suffix)
OUT A
–IN A
+IN A
V–
V+
OUT B
–IN B
+IN B
AD8632
18
27
36
45
8-Lead SOIC
(RM Suffix)
–IN A +IN A
V–
OUT B –IN B +IN B
V+
1
4
5
8
AD8632
OUT A
FEATURES Single Supply Operation: 1.8 V to 6 V Space-Saving SOT-23, SOIC Packaging Wide Bandwidth: 5 MHz @ 5 V, 4 MHz @ 1.8 V Low Offset Voltage: 4 mV Max, 0.8 mV typ Rail-to-Rail Input and Output Swing 2 V/s Slew Rate @ 1.8 V Only 225 A Supply Current @ 1.8 V
APPLICATIONS
Portable Communications Portable Phones Sensor Interface Active Filters PCMCIA Cards ASIC Input Drivers Wearable Computers Battery-Powered Devices New Generation Phones Personal Digital Assistants
GENERAL DESCRIPTION
The AD8631 brings precision and bandwidth to the SOT-23-5 package at single supply voltages as low as 1.8 V and low supply current. The small package makes it possible to place the AD8631 next to sensors, reducing external noise pickup.
The AD8631 and AD8632 are rail-to-rail input and output bipolar amplifiers with a gain bandwidth of 4 MHz and typical voltage offset of 0.8 mV from a 1.8 V supply. The low supply current and the low supply voltage makes these parts ideal for battery-powered applications. The 3 V/µs slew rate makes the AD8631/AD8632 a good match for driving ASIC inputs, such as voice codecs.
The AD8631/AD8632 is specified over the extended industrial (–40C to +125C) temperature range. The AD8631 single is available in 5-lead SOT-23 surface-mount packages. The dual AD8632 is available in 8-lead SOIC and µSOIC packages.
–2–
REV. 0
AD8631/AD8632–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage V
OS
0.8 4.0 mV
–40C T
A
+125C6mV
Input Bias Current I
B
250 nA
–40C T
A
+125C 500 nA
Input Offset Current I
OS
±150 nA
–40C T
A
+125C 550 nA
Input Voltage Range V
CM
05V
Common-Mode Rejection Ratio CMRR 0 V ≤ V
CM
5 V, 63 70 dB
–40C T
A
+125C56 dB
Large Signal Voltage Gain A
VO
RL = 10 k, 0.5 V < V
OUT
< 4.5 V 25 V/mV
R
L
= 100 k, 0.5 V < V
OUT
< 4.5 V 100 400 V/mV
R
L
= 100 k, –40ⴗC ≤ TA +125C 100 V/mV
Offset Voltage Drift ∆V
OS
/T 3.5 µV/ⴗC
Bias Current Drift ∆IB/T 400 pA/C
OUTPUT CHARACTERISTICS
Output Voltage Swing High V
OH
IL = 100 µA –40C T
A
+125C 4.965 V
I
L
= 1 mA 4.7 V
Output Voltage Swing Low V
OL
IL = 100 µA –40C T
A
+125C35mV
I
L
= 1 mA 200 mV
Short Circuit Current I
SC
Short to Ground, Instantaneous ±10 mA
POWER SUPPLY
Power Supply Rejection Ratio PSRR VS = 2.2 V to 6 V, 75 90 dB
–40C T
A
+125C72 dB
Supply Current/Amplifier I
SY
V
OUT
= 2.5 V 300 450 µA
–40C TA +125C 650 µA
DYNAMIC PERFORMANCE
Slew Rate SR 1 V < V
OUT
< 4 V, RL = 10 k 3V/µs Gain Bandwidth Product GBP 5 MHz Settling Time T
S
0.1% 860 ns
Phase Margin φ
m
53 Degrees
NOISE PERFORMANCE
Voltage Noise en p-p 0.1 Hz to 10 Hz 0.8 µV p-p Voltage Noise Density e
n
f = 1 kHz 23 nV/Hz
Current Noise Density i
n
f = 1 kHz 1.7 pA/Hz
Specifications subject to change without notice.
(VS = 5 V, V– = 0 V, VCM = 2.5 V, TA = 25C unless otherwise noted)
–3–REV. 0
AD8631/AD8632
ELECTRICAL CHARACTERISTICS
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage V
OS
0.8 4.0 mV
–40C T
A
+125C6mV
Input Bias Current I
B
250 nA
Input Offset Current I
OS
±150 nA
Input Voltage Range V
CM
0 2.2 V
Common-Mode Rejection Ratio CMRR 0 V ≤ V
CM
2.2 V, 54 70 dB
–40C T
A
+125C47 dB
Large Signal Voltage Gain A
VO
RL = 10 k, 0.5 V < V
OUT
< 1.7 V 25 V/mV
RL = 100 k 50 200 V/mV
OUTPUT CHARACTERISTICS
Output Voltage Swing High V
OH
IL = 100 µA 2.165 V I
L
= 750 µA 1.9 V
Output Voltage Swing Low V
OL
IL = 100 µA35mV IL = 750 µA 200 mV
POWER SUPPLY
Supply Current/Amplifier I
SY
V
OUT
= 1.1 V 250 350 µA
–40C TA +125C 500 µA
DYNAMIC PERFORMANCE
Slew Rate SR RL = 10 k 2.5 V/µs Gain Bandwidth Product GBP 4.3 MHz Phase Margin φ
m
50 Degrees
NOISE PERFORMANCE
Voltage Noise Density e
n
f = 1 kHz 23 nV/Hz
Current Noise Density i
n
f = 1 kHz 1.7 pA/Hz
Specifications subject to change without notice.
(VS = 2.2 V, V– = 0 V, VCM = 1.1 V, TA = 25C unless otherwise noted)
–4–
REV. 0
AD8631/AD8632–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage V
OS
0.8 4.0 mV
0C T
A
125C6mV
Input Bias Current I
B
250 nA
Input Offset Current I
OS
±150 nA
Input Voltage Range V
CM
0 1.8 V
Common-Mode Rejection Ratio CMRR 0 V ≤ V
CM
1.8 V,
0C T
A
125C4965dB
Large Signal Voltage Gain A
VO
RL = 10 k, 0.5 V < V
OUT
< 1.3 V 20 V/mV
RL = 100 k, 0.5 V < V
OUT
< 1.3 V 40 200 V/mV
OUTPUT CHARACTERISTICS
Output Voltage Swing High V
OH
IL = 100 µA 1.765 V I
L
= 750 µA 1.5 V
Output Voltage Swing Low V
OL
IL = 100 µA35mV IL = 750 µA 200 mV
POWER SUPPLY
Power Supply Rejection Ratio PSRR VS = 1.7 V to 2.2 V, 68 86 dB
0C T
A
125C65 dB
Supply Current/Amplifier I
SY
V
OUT
= 0.9 V 225 325 µA
0C TA 125C 450 µA
DYNAMIC PERFORMANCE
Slew Rate SR RL = 10 k 2V/µs Gain Bandwidth Product GBP 4 MHz Phase Margin φ
m
49 Degrees
NOISE PERFORMANCE
Voltage Noise Density e
n
f = 1 kHz 23 nV/Hz
Current Noise Density i
n
f = 1 kHz 1.7 pA/Hz
Specifications subject to change without notice.
(VS = 1.8 V, V– = 0 V, VCM = 0.9 V, TA = 25C unless otherwise noted)
AD8631/AD8632
–5–REV. 0
ABSOLUTE MAXIMUM RATINGS
1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 V
Input Voltage
2
. . . . . . . . . . . . . . . . . . . . . . . . . . . GND to V
S
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . ±0.6 V
Internal Power Dissipation
SOT-23 (RT) . . . . . . . . . . . . See Thermal Resistance Chart
SOIC (R) . . . . . . . . . . . . . . . See Thermal Resistance Chart
µSOIC (RM) . . . . . . . . . . . . See Thermal Resistance Chart
Output Short-Circuit Duration . . . . . . . . . . . . . . . . Indefinite
Storage Temperature Range
R, RM, and RT Packages . . . . . . . . . . . . . –65C to +150ⴗC
Operating Temperature Range
AD8631, AD8632 . . . . . . . . . . . . . . . . . . –40C to +125ⴗC
Junction Temperature Range
R, RM, and RT Packages . . . . . . . . . . . . . –65C to +150ⴗC
Lead Temperature Range (Soldering, 60 sec) . . . . . . . . 300ⴗC
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating condi­tions for extended periods may affect device reliability.
2
For supply voltages less than 6 V the input voltage is limited to the supply voltage.
Package Type
JA
1
JC
Unit
5-Lead SOT-23 (RT) 230 146 ⴗC/W 8-Lead SOIC (R) 158 43 ⴗC/W 8-Lead µSOIC (RM) 210 45 C/W
NOTE
1
θJA is specified for worst-case conditions, i.e., θ
JA
is specified for device soldered
in circuit board for SOT-23 and SOIC packages.
INPUT OFFSET VOLTAGE – mV
120
0
–4
QUANTITY OF AMPLIFIERS
90
60
30
–3 –2 –101234
VS = 5V V
CM
= 2.5V
T
A
= 25ⴗC
COUNT = 1,133 OP AMPS
Figure 1. Input Offset Voltage Distribution
SUPPLY VOLTAGE – V
350
200
6
SUPPLY CURRENT – A
1
345
325
300
275
250
225
2
TA = 25ⴗC
Figure 2. Supply Current per Amplifier vs. Supply Voltage
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AD8631/AD8632 features proprietary ESD protection circuitry, permanent dam­age may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
ORDERING GUIDE
Temperature Package Package
Model Range Description Option Brand
AD8631ART
1
–40C to +125C 5-Lead SOT-23 RT-5 AEA
AD8632AR –40C to +125C 8-Lead SOIC SO-8 AD8632ARM2–40C to +125C 8-Lead µSOIC RM-8 AGA
NOTES
1
Available in 3,000-piece reels only.
2
Available in 2,500-piece reels only.
AD8631/AD8632
–6–
REV. 0
– Typical Characteristics
TEMPERATURE – C
500
200
125
SUPPLY CURRENT – A
50
25 50 100
450
400
350
300
250
VS = 5V
25
075
Figure 3. Supply Current per Amplifier vs. Temperature
COMMON-MODE VOLTAGE – V
150
150
100
50
0
50
100
3
3
2
INPUT BIAS CURRENT – nA
1
0
12
VS = 2.5V T
A
= 25ⴗC
Figure 4. Input Bias Current vs. Common-Mode Voltage
SOURCE
LOAD CURRENT – A
140
120
0
10 10k100
OUTPUT VOLTAGE – mV
1k
100
80
60
40
20
TA = 25ⴗC
Figure 5. Output Voltage to Supply Rail vs. Load Current
FREQUENCY – Hz
100k 100M1M
OPEN-LOOP GAIN – dB
10M
40
40
30
20
10
0
10
20
30
45
0
45
90
90
PHASE SHIFT – De
g
rees
VS = 5V T
A
= 25ⴗC
GAIN
PHASE
Figure 6. Open-Loop Gain vs. Frequency
FREQUENCY – Hz
10 100M1k
CLOSED-LOOP GAIN – dB
1M
40
40
20
20
50
100 10k 100k 10M
VS = ±2.5V T
A
= 25ⴗC
30
10
0
10
30
Figure 7. Closed-Loop Gain vs. Frequency
FREQUENCY – Hz
10 1k
CMRR – dB
1M
100
20
40
60
80
0
100 10k 100k 10M
VS = 2.5V T
A
= 25ⴗC
Figure 8. CMRR vs. Frequency
AD8631/AD8632
–7–REV. 0
FREQUENCY – Hz
10 1k
PSRR – dB
1M
20
40
60
80
0
100 10k 100k 10M
120
PSRR
VS = 2.5V T
A
= 25ⴗC
PSRR
100
Figure 9. PSRR vs. Frequency
VS = 5V V
CM
= 2.5V
R
L
= 10k
T
A
= 25ⴗC
V
IN
= 50mV
A
V
= +1
CAPACITANCE – pF
60
50
0
10
100
OVERSHOOT – %
30
20
10
40
OS
+OS
Figure 10. Overshoot vs. Capacitance Load
FREQUENCY – Hz
6
5
0
10k
1M
100k
MAXIMUM OUTPUT SWING – V p-p
3
2
1
4
DISTORTION 3%
VS = 5V A
V
= +1
R
L
= 10k
T
A
= 25ⴗC
C
L
= 15pF
Figure 11. Output Swing vs. Frequency
FREQUENCY – Hz
10
100M1k
OUTPUT IMPEDANCE –
1M
0
60
40
100 10k 100k 10M
VS = 5V T
A
= 25ⴗC
10
20
30
50
AV = +10
AV = +1
Figure 12. Output Impedance vs. Frequency
FREQUENCY – Hz
50
0
10 10k100
VOLTAGE NOISE DENSITY – pA/ Hz
1k
40
30
20
10
VS =5V T
A
= 25ⴗC
Figure 13. Voltage Noise Density vs. Frequency
FREQUENCY – Hz
5
0
10 10k100
CURRENT NOISE DENSITY – pA/ Hz
1k
4
3
2
1
VS = 5V T
A
= 25ⴗC
Figure 14. Current Noise Density vs. Frequency
AD8631/AD8632
–8–
REV. 0
VOLTAGE – 200nV/DIV
TIME – 1s/DIV
0
0
0
0
0
0
0
0
0
TA = 25ⴗC
V
S
= 2.5V
Figure 15. 0.1 Hz to 10 Hz Noise
TIME – 200␮s/DIV
0
0
0
VOLTAGE – 1V/DIV
0
0
0
0
0
VS = 2.5V A
V
= 1
V
IN
= SINE WAVE
T
A
= 25ⴗC
Figure 16. No Phase Reversal
TIME – 250ns/DIV
0
0
0
VOLTAGE – 20mV/DIV
0
0
0
0
0
VS = 2.5V A
V
= +1
T
A
= 25ⴗC
C
L
= 33pF
R
L
= 10k
Figure 17. Small Signal Transient Response
TIME – 500ns/DIV
0
0
0
VOLTAGE – 500mV/DIV
0
0
0
0
0
VS = 2.5V A
V
= +1
T
A
= 25ⴗC
C
L
= 100pF
R
L
= 10k
Figure 18. Large Signal Transient Response
THEORY OF OPERATION
The AD863x is a rail-to-rail operational amplifier that can operate at supply voltages as low as 1.8 V. This family is fabricated using Analog Devices’ high-speed complementary bipolar process, also called XFCB. The process trench isolates each transistor to mini­mize parasitic capacitance, thereby allowing high-speed perfor­mance. Figure 19 shows a simplified schematic of the AD863x family.
The input stage consists of two parallel complementary differen­tial pair: one NPN pair (Q1 and Q2) and one PNP pair (Q3 and Q4). The voltage drops across R7, R8, R9, and R10 are kept low for rail-to-rail operation. The major gain stage of the op amp is a double-folded cascode consisting of transistors Q5, Q6, Q8, and Q9. The output stage, which also operates rail-to-rail, is driven by Q14. The transistors Q13 and Q10 act as level-shifters to give more headroom during 1.8 V operation.
As the voltage at the base of Q13 increases, Q18 starts to sink current. When the voltage at the base of Q13 decreases I8 flows through D16 and Q15 increasing the VBE of Q17, then Q20 sources current.
The output stage also furnishes gain, which depends on the load resistance, since the output transistors are in common emitter
configuration. The output swing when sinking or sourcing 100 µA is 35 mV maximum from each rail.
The input bias current characteristics depend on the common­mode voltage (see Figure 4). As the input voltage reaches about 1 V below V
CC
, the PNP pair (Q3 and Q4) turns off.
The 1 k input resistor R1 and R2, together with the diodes D7 and D8, protect the input pairs against avalanche damage.
The AD863x family exhibits no phase reversal as the input signal exceeds the supply by more than 0.6 V. Excessive current can flow through the input pins via the ESD diodes D1-D2 or D3-D4, in the event their ~0.6 V thresholds are exceeded. Such fault currents must be limited to 5 mA or less by the use of external series resistance(s).
LOW VOLTAGE OPERATION Battery Voltage Discharge
The AD8631 operates at supply voltages as low as 1.8 V. This amplifier is ideal for battery-powered applications since it can operate at the end of discharge voltage of most popular batteries. Table I lists the Nominal and End-of-Discharge Voltages of several typical batteries.
AD8631/AD8632
–9–REV. 0
The rail-to-rail feature of the AD8631 can be observed over the supply voltage range, 1.8 V to 5 V. Traces are shown offset for clarity.
INPUT BIAS CONSIDERATION
The input bias current (IB) is a non-ideal, real-life parameter that affects all op amps. I
B
can generate a somewhat significant offset
voltage. This offset voltage is created by I
B
when flowing through
the negative feedback resistor R
F
. If IB is 250 nA (worst case), and
R
F
is 100 k, the corresponding generated offset voltage is 25 mV
(V
OS
= IB RF).
Obviously the lower the R
F
the lower the generated voltage offset.
Using a compensation resistor, R
B
, as shown in Figure 21, can minimize this effect. With the input bias current minimized we still need to be aware of the input offset current (I
OS
) which will generate a slight offset error. Figure 21 shows three different configurations to minimize I
B
-induced offset errors.
NONINVERTING CONFIGURATION
AD8631
R
S
V
I
V
OUT
RF = R
S
UNITY GAIN BUFFER
V
OUT
R
F
R
I
RB = R
I
ⱍⱍ
R
F
V
I
V
OUT
RB = R
I
ⱍⱍ
R
F
V
I
R
F
R
I
AD8631
INVERTING CONFIGURATION
AD8631
Figure 21. Input Bias Cancellation Circuits
Q14
IN
V
EE
V
CC
V
OUT
Q1Q3
R5 R6
I2
R1
IN
R2
R4R3
I1
R7 R8
D2 ESD
D7
D8
Q2 Q4
D1
ESD
D3
ESD
D4
ESD
Q5
Q6
Q7
C1
Q8
Q11
Q9
I4
I3
I5
Q13
I7
I6
C3
R10R9
R11
Q15
Q17
D6
R12
Q18
I8
C2
R14
Q19 Q20
C4
D9
V
CC
D16
R13
V
EE
Q10
Figure 19. Simplified Schematic
Table I. Typical Battery Life Voltage Range
Nominal End-of-Voltage
Battery Voltage (V) Discharge (V)
Lead-Acid 2 1.8 Lithium 2.6–3.6 1.7–2.4 NiMH 1.2 1 NiCd 1.2 1 Carbon-Zinc 1.5 1.1
RAIL-TO-RAIL INPUT AND OUTPUT
The AD8631 features an extraordinary rail-to-rail input and output with supply voltages as low as 1.8 V. With the amplifier’s supply set to 1.8 V, the input can be set to 1.8 V p-p, allowing the output to swing to both rails without clipping. Figure 20 shows a scope picture of both input and output taken at unity gain, with a frequency of 1 kHz, at V
S
= 1.8 V and VIN = 1.8 V p-p.
TIME – 200␮s/Div
VS = 1.8V V
IN
= 1.8V p-p
V
IN
V
OUT
Figure 20. Rail-to-Rail Input Output
AD8631/AD8632
–10–
REV. 0
DRIVING CAPACITIVE LOADS Capacitive Load vs. Gain
Most amplifiers have difficulty driving capacitance due to degra­dation of phase margin caused by additional phase lag from the capacitive load. Higher capacitance at the output can increase the amount of overshoot and ringing in the amplifier’s step response and could even affect the stability of the device. The value of capacitive load that an amplifier can drive before oscillation varies with gain, supply voltage, input signal, temperature, among oth­ers. Unity gain is the most challenging configuration for driving capacitive load. However, the AD8631 offers reasonably good capacitive driving ability. Figure 22 shows the AD8631’s ability to drive capacitive loads at different gains before instability occurs. This graph is good for all V
SY
.
GAIN – V/V
1M
10
102
CAPACITIVE LOAD – pF
468
10k
1k
100
93571
UNSTABLE
STABLE
100k
Figure 22. Capacitive Load vs. Gain
In-the-Loop Compensation Technique for Driving Capacitive Loads
When driving capacitance in low gain configuration, the in-the-loop compensation technique is recommended to avoid oscillation as is illustrated in Figure 23.
RF + R
G
CF =1 +
A
CL
1
R
F
CLR
O
[
[
RX =
RO R
G
R
F
WHERE RO = OPEN-LOOP OUTPUT RESISTANCE
AD8631
V
IN
V
OUT
R
X
C
L
C
F
R
F
R
G
Figure 23. In-the-Loop Compensation Technique for Driving Capacitive Loads
Snubber Network Compensation for Driving Capacitive Loads
As load capacitance increases, the overshoot and settling time will increase and the unity gain bandwidth of the device will decrease. Figure 24 shows an example of the AD8631 in a non­inverting configuration driving a 10 k resistor and a 600 pF capacitor placed in parallel, with a square wave input set to a frequency of 90 kHz and unity gain.
VOLTAGE – 200mV/DIV
TIME – 2␮s/DIV
90kHz INPUT SIGNAL A
V
= 1
C = 600pF
Figure 24. Driving Capacitive Loads without Compensation
By connecting a series R–C from the output of the device to ground, known as the “snubber” network, this ringing and over­shoot can be significantly reduced. Figure 25 shows the network setup, and Figure 26 shows the improvement of the output response with the “snubber” network added.
AD8631
V
IN
V
OUT
5V
R
X
C
X
C
L
Figure 25. Snubber Network Compensation for Capacitive Loads
VOLTAGE – 200mV/DIV
TIME – 2␮s/DIV
90kHz INPUT SIGNAL A
V
= 1
C = 600pF
Figure 26. Photo of a Square Wave with the Snubber Network Compensation
The network operates in parallel with the load capacitor, CL, and provides compensation for the added phase lag. The actual values of the network resistor and capacitor have to be empirically determined. Table II shows some values of snubber network for large capacitance load.
AD8631/AD8632
–11–REV. 0
Table II. Snubber Network Values for Large Capacitive Loads
C
LOAD
Rx Cx
600 pF 300 1 nF 1 nF 300 1 nF 10 nF 90 8
nF
TOTAL HARMONIC DISTORTION + NOISE
The AD863x family offers a low total harmonic distortion, which makes this amplifier ideal for audio applications. Figure 27 shows a graph of THD + N, which is ~0.02% @ 1 kHz, for a 1.8 V supply. At unity gain in an inverting configuration the value of the Total Harmonic Distortion + Noise stays consistently low over all volt­ages supply ranges.
FREQUENCY – Hz
0.1
0.001 10 20k
THD + N – %
0.01
1
10
100 1k 10k
VS = 1.8V
VS = 5V
INVERTING A
V
= 1
Figure 27. THD + N vs. Frequency Graph
AD8632 Turn-On Time
The low voltage, low power AD8632 features an extraordinary turn on time. This is about 500 ns for V
SY
= 5 V, which is impressive
considering the low supply current (300 µA typical per amplifier). Figure 28 shows a scope picture of the AD8632 with both channels configured as followers. Channel A has an input signal of 2.5 V and channel B has the input signal at ground. The top waveform shows the supply voltage and the bottom waveform reflects the response of the amplifier at the output of Channel A.
TIME – 200ns/DIV
0
0
0
VOLTAGE – 1V/DIV
0
0
0
0
VS = 5V A
V
= 1
V
IN
= 2.5V STEP
0V
0V
Figure 28. AD8632 Turn-On Time
A MICROPOWER REFERENCE VOLTAGE GENERATOR
Many single-supply circuits are configured with the circuit biased to one-half of the supply voltage. In these cases, a false-ground reference can be created by using a voltage divider buffered by an amplifier. Figure 28 shows the schematic for such a circuit.
The two 1 M resistors generate the reference voltages while drawing only 0.9 µA of current from a 1.8 V supply. A capacitor connected from the inverting terminal to the output of the op amp provides compensation to allow a bypass capacitor to be connected at the reference output. This bypass capacitor helps establish an ac ground for the reference output.
AD8631
10k
0.022␮F
V
REF
0.9V TO 2.5V
1F
1F
1M
1.8V TO 5V
100
1M
Figure 29. A Micropower Reference Voltage Generator
MICROPHONE PREAMPLIFIER
The AD8631 is ideal to use as a microphone preamplifier. Figure 30 shows this implementation.
AD8631
V
OUT
R3
220k
1.8V
V
REF
= 0.9V
R2
22k
C1
0.1␮F
1.8V
R1
2.2k
ELECTRET
MIC
A
V
=
R3 R2
V
IN
Figure 30. A Microphone Preamplifier
R1 is used to bias an electret microphone and C1 blocks dc voltage from the amplifier. The magnitude of the gain of the amplifier is approximately R3/R2 when R2 10 R1. V
REF
should be equal to
1/2 1.8 V for maximum voltage swing.
Direct Access Arrangement for Telephone Line Interface
Figure 31 illustrates a 1.8 V transmit/receive telephone line interface for 600 transmission systems. It allows full duplex transmission of signals on a transformer-coupled 600 line in a differential manner. Amplifier A1 provides gain that can be adjusted to meet the modem output drive requirements. Both A1 and A2 are configured to apply the largest possible signal on a single supply to the transformer. Amplifier A3 is configured as a difference amplifier for two reasons: (1) It prevents the transmit signal from interfering with the receive signal and (2) it extracts the receive signal from the transmission line for amplification by A4. A4’s gain can be adjusted in the same manner as A1’s to meet the modem’s input signal requirements. Standard resistor values permit the use of SIP (Single In-line Package) format resistor arrays. Couple this with the AD8631/
–12–
REV. 0
PRINTED IN U.S.A.
AD8631/AD8632
C3810–2.5–4/00 (rev. 0)
AD8632’s 5-lead SOT-23, 8-lead µSOIC, and 8-lead SOIC footprint and this circuit offers a compact solution.
6.2V
6.2V
TRANSMIT
TxA
RECEIVE
RxA
C1
0.1␮F
R1
10k
R2
9.09k
2k
P1 Tx GAIN ADJUST
A1
A2
A3
A4
A1, A2 = 1/2 AD8632 A3, A4 = 1/2 AD8632
R3
360
1:1
T1
TO TELEPHONE
LINE
1
2
3
7
6
5
2
3
1
6
5
7
10␮F
R7 10k
R8 10k
R5
10k
R6
10k
R9
10k
R14
14.3k
R10
10k
R11
10k
R12
10k
R13
10k
C2
0.1␮F
P2 Rx GAIN ADJUST
2k
Z
O
600
+1.8V DC
MIDCOM 671-8005
Figure 31. A Single-Supply Direct Access Arrangement for Modems
OUTLINE DIMENSIONS
Dimensions shown in inches and (mm).
8-Lead Narrow Body SOIC
(SO-8)
0.1968 (5.00)
0.1890 (4.80)
85
41
0.2440 (6.20)
0.2284 (5.80)
PIN 1
0.1574 (4.00)
0.1497 (3.80)
0.0688 (1.75)
0.0532 (1.35)
SEATING
PLANE
0.0098 (0.25)
0.0040 (0.10)
0.0192 (0.49)
0.0138 (0.35)
0.0500 (1.27)
BSC
0.0098 (0.25)
0.0075 (0.19)
0.0500 (1.27)
0.0160 (0.41)
8 0
0.0196 (0.50)
0.0099 (0.25)
45
5-Lead SOT-23
(RT-5)
0.1181 (3.00)
0.1102 (2.80)
PIN 1
0.0669 (1.70)
0.0590 (1.50)
0.1181 (3.00)
0.1024 (2.60)
1 3
4 5
0.0748 (1.90) BSC
0.0374 (0.95) BSC
2
0.0079 (0.20)
0.0031 (0.08)
0.0217 (0.55)
0.0138 (0.35)
10
0
0.0197 (0.50)
0.0138 (0.35)
0.0059 (0.15)
0.0019 (0.05)
0.0512 (1.30)
0.0354 (0.90)
SEATING PLANE
0.0571 (1.45)
0.0374 (0.95)
8-Lead SOIC
(RM-8)
85
41
0.122 (3.10)
0.114 (2.90)
0.199 (5.05)
0.187 (4.75)
PIN 1
0.0256 (0.65) BSC
0.122 (3.10)
0.114 (2.90)
SEATING
PLANE
0.006 (0.15)
0.002 (0.05)
0.018 (0.46)
0.008 (0.20)
0.043 (1.09)
0.037 (0.94)
0.120 (3.05)
0.112 (2.84)
0.011 (0.28)
0.003 (0.08)
0.028 (0.71)
0.016 (0.41)
33 27
0.120 (3.05)
0.112 (2.84)
SPICE Model
The SPICE model for the AD8631 amplifier is available and can be downloaded from the Analog Devices’ web site at http://www.analog.com. The macro-model accurately simulates a number of AD8631 parameters, including offset voltage, input common-mode range, and rail-to-rail output swing. The output voltage versus output current characteristics of the macro-model is identical to the actual AD8631 performance, which is a critical feature with a rail-to-rail amplifier model. The model also accurately simulates many ac effects, such as gain-bandwidth product, phase margin, input voltage noise, CMRR and PSRR versus frequency, and transient response. Its high degree of model accuracy makes the AD8631 macro-model one of the most reliable and true-to-life models available for any amplifier.
Loading...