Datasheet AD8603 Datasheet (Analog Devices)

Precision Micropower Low Noise CMOS Rail-
to-Rail Input/Output Operational Amplifiers

FEATURES

Low offset voltage: 50 µV max Low input bias current: 1 pA max Single-supply operation: 1.8 V to 5 V Low noise: 22 nV/√Hz Micropower: 50 µA max Low distortion No phase reversal Unity gain stable

APPLICATIONS

Battery-powered instrumentation Multipole filters Sensors Low power ASIC input or output amplifiers

GENERAL DESCRIPTION

The AD8603/AD8607/AD8609 are, single/dual/quad micro­power rail-to-rail input and output amplifiers, respectively, that features very low offset voltage as well as low input voltage and current noise.
These amplifiers use a patented trimming technique that achieves superior precision without laser trimming. The parts are fully specified to operate from 1.8 V to 5.0 V single supply or from ±0.9 V to ±2.5 V dual supply. The combination of low offsets, low noise, very low input bias currents, and low power consumption make the AD8603/AD8607/AD8609 especially useful in portable and loop-powered instrumentation.
The ability to swing rail to rail at both the input and output enables designers to buffer CMOS ADCs, DACs, ASICs, and other wide output swing devices in low power single-supply systems.
The AD8603 is available in a tiny 5-lead TSOT-23 package. The AD8607 is available in 8-lead MSOP and SOIC packages. The AD8609 is available in 14-lead TSSOP and SOIC packages.
AD8603/AD8607/AD8609

PIN CONFIGURATIONS

V+
1
OUT
AD8603
V–
2
TOP VIEW
(Not to Scale)
+IN
3
Figure 1. 5-Lead TSOT-23 (UJ Suffix)
IN A
V
1
AD8607
45
OUT A
+IN A
Figure 2. 8-Lead MSOP (RM Suffix)
OUT A
1
–IN A
2
+IN A
AD8607
3
V–
4
Figure 3. 8-Lead SOIC (R Suffix)
OUT A
+IN A
+IN B
OUT B
IN A
IN B
1
AD8609
V+
7
Figure 4. 14-Lead TSSOP (RU Suffix)
1
OUT A
2
IN A
3
+IN A
AD8609
4
V+
5
+IN B
6
–IN B
7
OUT B
Figure 5. 14-Lead SOIC (R Suffix)
5
–IN
4
04356-0-001
8
V+ OUT B
IN B
+IN B
04356-0-045
V+
8
OUT B
7
6
–IN B
+IN B
5
04356-0-047
OUT D
14
IN D
+IN D
V +IN C
IN C
8
OUT C
04356-0-044
14
OUT D
13
–IN D
12
+IN D
11
V–
10
+IN C
9
–IN C
8
OUT C
04356-0-046
Rev. A
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 www.analog.com Fax: 781.326.8703 © 2003 Analog Devices, Inc. All rights reserved.
AD8603/AD8607/AD8609
TABLE OF CONTENTS
Specifications..................................................................................... 3
Absolute Maximum Ratings............................................................ 5
Typical Performance Characteristics ............................................. 6
Applications..................................................................................... 12
No Phase Reversal ...................................................................... 12
Input Overvoltage Protection................................................... 12
Driving Capacitive Loads .......................................................... 12
Proximity Sensors....................................................................... 13
Composite Amplifiers................................................................ 13
Battery-Powered Applications .................................................. 14
Photodiodes ................................................................................ 14
Outline Dimensions....................................................................... 15
Ordering Guide .......................................................................... 16
REVISION HISTORY
10/03—Data Sheet Changed from Rev. 0 to Rev. A
Change Page
Added AD8607 and AD8609 parts ..............................Universal
Changes to Specifications............................................................ 3
Changes to Figure 35.................................................................. 10
Added Figure 41.......................................................................... 11
Rev. A | Page 2 of 16
AD8603/AD8607/AD8609

SPECIFICATIONS

Table 1. Electrical Characteristics @ VS = 5 V, VCM = VS/2, TA = 25°C, unless otherwise noted
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage VOS V –0.3 V < VCM < +5.2 V 40 300 µV –40°C < TA < +125°C, –0.3 V < VCM < +5.2 V 700 µV
Offset Voltage Drift ∆VOS/∆T –40°C < TA < +125°C 1 4.5 µV/°C
Input Bias Current IB 0.2 1 pA –40°C < TA < +85°C 50 pA –40°C < TA < +125°C 500 pA
Input Offset Current IOS 0.1 0.5 pA –40°C < TA < +85°C 50 pA –40°C < TA < +125°C 250 pA
Input Voltage Range IVR –0.3 +5.2 V
Common-Mode Rejection Ratio CMRR 0 V < VCM < 5 V 85 100 dB –40°C < TA < +125°C 80 dB
Large Signal Voltage Gain AVO R
AD8603 400 1000 V/mV AD8607/AD8609 250 450 V/mV
Input Capacitance C C
1.9 pF
DIFF
2.5 pF
CM
OUTPUT CHARACTERISTICS
Output Voltage High VOH I –40°C to +125°C 4.9 V I –40°C to +125°C 4.50 V
Output Voltage Low VOL I –40°C to +125°C 50 mV I –40°C to +125°C 330 mV
Output Current I
Closed-Loop Output Impedance Z
±80 mA
OUT
f = 10 kHz, AV = 1 36
OUT
POWER SUPPLY
Power Supply Rejection Ratio PSRR 1.8 V < VS < 5 V 80 100 dB
Supply Current/Amplifier ISY V –40°C <TA < +125°C 60 µA DYNAMIC PERFORMANCE
Slew Rate SR RL = 10 kΩ 0.1 V/µs
Settling Time 0.1% tS G= ±1, 2 V Step 23 µs
Gain Bandwidth Product GBP RL = 100 kΩ 400 kHz R
Phase Margin ØO R NOISE PERFORMANCE
Peak-to-Peak Noise e
0.1 Hz to 10 Hz 2.3 3.5 µV
n p-p
Voltage Noise Density en f = 1 kHz 25 nV/√Hz f = 10 kHz 22 nV/√Hz
Current Noise Density in f = 1 kHz 0.05 pA/√Hz
Channel Separation Cs f = 10 kHz –115 dB
f = 100 kHz –110 dB
= 3.3 V @ VCM = 0.5 V and 2.8 V 12 50 µV
S
= 10 kΩ, 0.5 V <VO < 4.5 V
L
= 1 mA 4.95 4.97 V
L
= 10 mA 4.65 4.97 V
L
= 1 mA 16 30 mV
L
= 10 mA 160 250 mV
L
= 0 V 40 50 µA
O
= 10 kΩ 316 kHz
L
= 10 kΩ, RL = 100 kΩ 70 Degrees
L
Rev. A | Page 3 of 16
AD8603/AD8607/AD8609
Table 2. Electrical Characteristics @ VS = 1.8 V, VCM = VS/2, TA = 25°C, unless otherwise noted
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage VOS V –0.3 V < VCM < +1.8 V 40 300 µV –40°C < TA < +85°C, –0.3 V < VCM < +1.8 V 500 µV –40°C < TA < +125°C, –0.3 V < VCM < +1.7 V 700 µV
Offset Voltage Drift ∆VOS/∆T –40°C < TA < +125°C 1 4.5 µV/°C
Input Bias Current IB 0.2 1 pA
–40°C < TA < +85°C 50 pA –40°C < TA < +125°C 500 pA
Input Offset Current IOS 0.1 0.5 pA –40°C < TA < +85°C 50 pA –40°C < TA < +125°C 250 pA
Input Voltage Range IVR –0.3 +1.8 V
Common-Mode Rejection Ratio CMRR 0 V < VCM < 1.8 V 80 98 dB –40°C < TA < +85°C 70 dB
Large Signal Voltage Gain AVO R
AD8603 150 3000 V/mV AD8607/AD8609 100 2000 V/mV
Input Capacitance C C
2.1 pF
DIFF
3.8 pF
CM
OUTPUT CHARACTERISTICS
Output Voltage High VOH I –40°C to +125°C 1.6 V
Output Voltage Low VOL I –40°C to +125°C 80 mV
Output Current I
Closed-Loop Output Impedance Z
±7 mA
OUT
f = 10 kHz, AV = 1 36
OUT
POWER SUPPLY
Power Supply Rejection Ratio PSRR 1.8 V < VS < 5 V 80 100 dB
Supply Current/Amplifier ISY V –40°C < TA < +85°C 60 µA DYNAMIC PERFORMANCE
Slew Rate SR RL = 10 kΩ 0.1 V/µs
Settling Time 0.1% tS G= ±1, 1 V Step 9.2 µs
Gain Bandwidth Product GBP RL = 100 kΩ 385 kHz R
Phase Margin ØO R NOISE PERFORMANCE
Peak-to-Peak Noise e
0.1 Hz to 10 Hz 2.3 3.5 µV
n p-p
Voltage Noise Density en f = 1 kHz 25 nV/√Hz f = 10 kHz 22 nV/√Hz
Current Noise Density in f = 1 kHz 0.05 pA/√Hz
= 3.3 V @ VCM = 0.5 V and 2.8 V 12 50 µV
S
= 10 kΩ, 0.5 V <VO < 4.5 V
L
= 1 mA 1.65 1.72 V
L
= 1 mA 38 60 mV
L
= 0 V 40 50 µA
O
= 10 kΩ 316 kHz
L
= 10 kΩ, RL = 100 kΩ 70 Degrees
L
Channel Separation Cs f = 10 kHz –115 dB
f = 100 kHz –110 dB
Rev. A | Page 4 of 16
AD8603/AD8607/AD8609

ABSOLUTE MAXIMUM RATINGS

Table 3. AD8603/AD8607/AD8609 Stress Ratings
Parameter Rating
Supply Voltage 6 V Input Voltage GND to VS Differential Input Voltage ±6 V Output Short-Circuit Duration to GND Indefinite Storage Temperature Range
All Packages –65°C to +150°C Lead Temperature Range (Soldering, 60 Sec) 300°C Operating Temperature Range –40°C to +125°C Junction Temperature Range
All Packages –65°C to +150°C
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although these parts feature proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
1, 2
Table 4. Package Characteristics
Package Type θ
5-Lead TSOT-23 (UJ) 207 61 °C/W 8-Lead MSOP (RM) 210 45 °C/W 8-Lead SOIC (R) 158 43 °C/W 14-Lead SOIC (R) 120 36 °C/W 14-Lead TSSOP (RU) 180 35 °C/W
1
Stresses above those listed under Absolute Maximum Ratings may cause
permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
2
Absolute maximum ratings apply at 25°C, unless otherwise noted.
3
θJA is specified for the worst-case conditions, i.e., θJA is specified for device
soldered in circuit board for surface-mount packages.
3
θJC Unit
JA
Rev. A | Page 5 of 16
AD8603/AD8607/AD8609

TYPICAL PERFORMANCE CHARACTERISTICS

2600
VS = 5V
2400
TA = 25°C
2200
VCM = 0V to 5V
2000
1800
1600
1400
1200
1000
800
600
NUMBER OF AMPLIFIERS
400
200
0
–270
–210
–150 –30 30 90 210 270–90
VOS (µV)
Figure 6. Input Offset Voltage Distribution
30
0 150
04356-0-002
300
VS = 3.3V
250
TA = 25°C
200
150
100
50
0
(µV)
OS
–50
V
–100
–150
–200
–250
–300
0.0
0.9 2.1 3.0
0.60.3 1.5 2.72.41.81.2
VCM(V)
VCM (V)
Figure 9. Input Offset Voltage vs. Common-Mode Voltage
400
04356-0-005
3.3
NUMBERS OF AMPLIFIERS
25
20
15
10
5
0
0
0.4 0.8 1.2 2.0 2.4 2.8 3.6 4.0 4.4 4.8
1.6 3.2 TCVOS (µV/°C)
VS= ±2.5V
= –40°C TO +125°C
T
A
= 0V
V
CM
Figure 7. Input Offset Voltage Drift Distribution
300
VS = 5V
250
TA = 25°C
200
150
100
50
0
(µV)
OS
–50
V
–100
–150
–200
–250
–300
0.0
1.5 3.5 5.0
1.00.5 2.5 4.54.03.02.0 VCM (V)
Figure 8. Input Offset Voltage vs. Common-Mode Voltage
04356-0-003
04356-0-004
350
300
250
200
150
100
INPUT BIAS CURRENT (pA)
VS= ±2.5V
50
0
0
25
50 100 125
TEMPERATURE (°C)
75
Figure 10. Input Bias vs. Temperature
1000
VS= 5V
= 25°C
T
100
10
1
0.1
OUTPUT VOLTAGE TO SUPPLY RAIL (mV)
0.01
0.001
A
SOURCE
0.01 0.1 1 LOAD CURRENT (mA)
SINK
Figure 11. Output Voltage to Supply Rail vs. Load Current
04356-0-006
04356-0-007
10
Rev. A | Page 6 of 16
AD8603/AD8607/AD8609
350
= 5V
V
S
= 25°C
T
A
300
DD–VOH
V
@ 10mA LOAD
@ 10mA LOAD
OL
V
DD–VOH
20 35 50 65 80 95 1105 TEMPERATURE (°C)
@ 1mA LOAD
VOL@ 1mA LOAD
250
200
150
100
OUTPUT SWING (mV)
V
50
0
–25 –10 125
–40
Figure 12. Output Voltage Swing vs. Temperature
100
VS= ±2.5V
80
RL= 100k CL= 20pF φ = 70.9°
60
40
20
0
–20
–40
OPEN-LOOP GAIN (dB)
–60
–80
–100
1k 10k 100k 1M 10M
FREQUENCY (Hz)
Figure 13. Open-Loop Gain and Phase vs. Frequency
5.0
VS= 5V
4.5 VIN= 4.9V p-p
T = 25°C
4.0 A
= 1
V
3.5
3.0
2.5
2.0
1.5
OUTPUT SWING (V p-p)
1.0
0.5
0.0
0.01
0.1 1 100 FREQUENCY (kHz)
10
Figure 14. Closed-Loop Output Voltage Swing vs. Frequency
225
180
135
90
45
0
–45
–90
–135
–180
–225
04356-0-008
PHASE (Degree)
04356-0-010
04356-0-011
1925
OUTPUT IMPEDANCE (Ω)
1750
1575
1400
1225
1050
875
700
525
350
175
100
VS= ±2.5V, ±0.9V
A = 100
A = 10
1k 100k
10k
FREQUENCY (Hz)
Figure 15. Output Impedance vs. Frequency
140
120
100
80
60
40
20
CMRR (dB)
0
–20
–40
–60
100
1k 10k
FREQUENCY (Hz)
Figure 16. Common-Mode Rejection Ratio vs. Frequency
140
VS= ±2.5V
120
100
80
60
40
20
PSRR (dB)
0
–20
–40
–60
10 100 1k 10k 100k
FREQUENCY (Hz)
Figure 17. PSRR v s. Frequency
A = 1
04356-0-012
VS = ±2.5V
04356-0-013
100k
04356-0-014
Rev. A | Page 7 of 16
AD8603/AD8607/AD8609
60
VS= 5V
50
40
30
20
10
SMALL SIGNAL OVERSHOOT (%)
OS–
OS+
VS = 5V, 1.8V
VOLTAGE NOISE (1µV/DIV)
0
10
LOAD CAPACITANCE (pF)
100 1000
Figure 18. Small Signal Overshoot vs. Load Capacitance
60
55
VS= ±2.5V
50
45
40
35
30
25
20
SUPPLY CURRENT (µA)
15
10
5
0 –40
–10 5 35 65
20 80–25 50
TEMPERATURE (°C)
Figure 19. Supply Current vs. Temperature
100
90
80
70
60
50
40
30
SUPPLY CURRENT (µA)
20
10
0
0
1.0
2.0 4.0 5.0
SUPPLY VOLTAGE (V)
TA= 25°C
3.0
Figure 20. Supply Current vs. Supply Voltage
95 110 125
04356-0-015
04356-0-016
04356-0-017
TIME (1s/DIV)
Figure 21. 0.1 Hz to 10 Hz Input Voltage Noise
VS = 5V RL = 10k
CL = 200pF AV = 1
VOLTAGE (50mV/DIV)
TIME (4
Figure 22. Small Signal Transient
VS = 5V RL = 10k
CL = 200pF
= 1
A
V
VOLTAGE (1V/DIV)
TIME (20µs/DIV)
Figure 23. Large Signal Transient
µ
s/DIV)
04356-0-018
04356-0-019
04356-0-020
Rev. A | Page 8 of 16
AD8603/AD8607/AD8609
VS= ±2.5V
= 10k
R
L
= 100
A
+2.5V
0V
0V
VOLTAGE (50mV/DIV)
–50mV
V
V
IN
= 50mV
TIME (4µs/DIV))
TIME (40µs/DIV))
Figure 24. Negative Overload Recovery
VS = ±2.5V
= 10k
R
L
= 100
A
V
= 50mV
V
IN
0V
0V
VOLTAGE (50mV/DIV)
–50mV
TIME (4µs/DIV)
Figure 25. Positive Overload Recovery
168
144
120
96
72
48
24
VOLTAGE NOISE DENSITY (nV/ Hz)
0
0.1 1.00.2 0.3 0.4 0.5 0.6 0.7 0.8 0.90
FREQUENCY (kHz)
Figure 26. Voltage Noise Density vs. Frequency
04356-0-021
+2.5V
04356-0-022
VS = ±2.5V
04356-0-045
176
154
132
110
88
66
44
22
VOLTAGE NOISE DENSITY (nV/ Hz)
0
110234567890
FREQUENCY (kHz)
VS = ±2.5V
Figure 27. Voltage Noise Density vs. Frequency
800
NUMBER OF AMPLIFIERS
750
700 650
600
550
500
450 400
350 300
250
200
150
100
50
0
–300
–240 60 240–180 –120 120 180 300
Figure 28. V
0–60
VOS (µV)
Distribution
OS
VS = 1.8V
= 25°C
T
A
= 0V to 1.8V
V
CM
300
VS = 1.8V
250
200
150
100
(µV)
OS
–50
V
–100
–150
–200
–250
–300
= 25°C
T
A
50
0
0.0
0.9
0.60.3 1.5 1.81.2
VCM(V)
VCM (V)
Figure 29. Input Offset Voltage vs. Common-Mode Voltage
04356-0-046
04356-0-025
04356-0-026
Rev. A | Page 9 of 16
AD8603/AD8607/AD8609
1000
VS= 1.8V
= 25°C
T
A
100
10
1
0.1
OUTPUT VOLTAGE TO SUPPLY RAIL (mV)
0.01
0.001
SOURCE
SINK
0.01 0.1 1 LOAD CURRENT (mA)
Figure 30. Output Voltage to Supply Rail vs. Load Current
10
04356-0-027
100
VS= ±0.9V RL= 100k
80
CL= 20pF φ = 70°
60
40
20
0
–20
–40
OPEN-LOOP GAIN (dB)
–60
–80
–100
1 10 100 1M 10M
Figure 33. Open-Loop Gain and Phase vs. Frequency
100
90
80
70
60
50
40
30
OUTPUT SWING (mV)
20
10
0
–40
–25
VS = 1.8V
VDD– VOH@ 1mA LOAD
VOL@ 1mA LOAD
–10
5 35 125
20
TEMPERATURE (°C)
50 65 80 95 110
04356-0-028
140
120
VS= 1.8V
100
80
60
40
20
CMRR (dB)
0
–20
–40
–60
100 1k 10k 100k
FREQUENCY (Hz)
FREQUENCY (Hz)
225
180
135
90
45
0
–45
–90
–135
–180
–225
PHASE (Degree)
04356-0-030
04356-0-031
Figure 31. Output Voltage Swing vs. Temperature
60
VS = 1.8V
= 25°C
T
A
50
40
30
20
10
SMALL SIGNAL OVERSHOOT (%)
= 1
A
V
OS–
0
10
LOAD CAPACITANCE (pF)
100 1000
Figure 32. Small Signal Overshoot vs. Load Capacitance
OS+
04356-0-029
Rev. A | Page 10 of 16
Figure 34. Common-Mode Rejection Ratio vs. Frequency
1.8
VS= 1.8V VIN= 1.7V p–p
1.5 T= 25°C
)
P-P
OUTPUT SWING (V
AV= 1
1.2
0.9
0.6
0.3
0.0
0.01 0.1 1 10010 FREQUENCY (kHz)
Figure 35. Closed-Loop Output Voltage Swing vs. Frequency
04356-0-032
AD8603/AD8607/AD8609
VS = 1.8V
= 10k
R
L
= 200pF
C
L
= 1
A
V
VOLTAGE (50mV/DIV)
Figure 36. Small Signal Transient
VS= 1.8V RL= 10k
= 200pF
C
L
= 1
A
V
TIME (4µs/DIV)
04356-0-033
–20
–40
–60
176
154
132
110
88
66
44
22
VOLTAGE NOISE DENSITY (nV/ Hz)
0
110234567890
FREQUENCY (kHz)
VS = ±0.9V
04356-0-048
Figure 39. Voltage Noise Density
0
VS = ±2.5V, ±0.9V
–80
VOLTAGE (500mV/DIV)
04356-0-034
TIME (20µs/DIV)
Figure 37. Large Signal Transient
168
140
112
84
56
28
VOLTAGE NOISE DENSITY (nV/ Hz)
0
0.1 1.00.2 0.3 0.4 0.5 0.6 0.7 0.8 0.90
FREQUENCY (kHz)
VS = ±0.9V
04356-0-047
–100
CHANNEL SEPARATION (dB)
–120
–140
100
1k 10k 100k
Figure 40. Channel Separation
FREQUENCY (Hz)
04356-A-043
1M
Figure 38. Voltage Noise Density
Rev. A | Page 11 of 16
AD8603/AD8607/AD8609

APPLICATIONS

NO PHASE REVERSAL

The AD8603/AD8607/AD8609 do not exhibit phase inversion even when the input voltage exceeds the maximum input common-mode voltage. Phase reversal can cause permanent damage to the amplifier, resulting in system lockups. The AD8603/AD8607/AD8609 can handle voltages of up to 1 V over the supply.
VS = ±2.5V V
V
IN
V
OUT
IN
A
V
R
L
= 6V p-p = 1 = 10k
The use of the snubber circuit is usually recommended for unity gain configurations. Higher gain configurations help improve the stability of the circuit. Figure 44 shows the same output response with the snubber in place.
VS = ±0.9V V
= 100mV
IN
C
= 2nF
L
R
= 10k
L
VOLTAGE (1V/DIV)
04356-0-037
TIME (4µs/DIV)
Figure 41. No Phase Response

INPUT OVERVOLTAGE PROTECTION

If a voltage 1 V higher than the supplies is applied at either input, the use of a limiting series resistor is recommended. If both inputs are used, each one should be protected with a series resistor.
To ensure good protection, the current should be limited to a maximum of 5 mA. The value of the limiting resistor can be determined from the equation
VS)/(RS + 200 Ω) 5 mA
(V
IN

DRIVING CAPACITIVE LOADS

The AD8603/AD8607/AD8609 are capable of driving large capacitive loads without oscillating. Figure 42 shows the output of the AD8603/AD8607/AD8609 in response to a 100 mV input signal, with a 2 nF capacitive load.
Although it is configured in positive unity gain (the worst case), the AD8603 shows less than 20% overshoot. Simple additional circuitry can eliminate ringing and overshoot.
One technique is the snubber network, which consists of a series RC and a resistive load (see Figure 43). With the snubber in place, the AD8603/AD8607/AD8609 are capable of driving capacitive loads of 2 nF with no ringing and less than 3% overshoot.
04356-0-038
Figure 42. Output Response to a 2 nF Capacitive Load, without Snubber
V
EE
V V+
R
S
200mV
+ –
150
V
CC
C
S
47pF
C
L
04356-A-039
Figure 43. Snubber Network
VSY = ±0.9V V
= 100mV
IN
C
= 2nF
L
R
= 10k
L
R
= 150
S
C
= 470pF
S
04356-0-040
Figure 44. Output Response to a 2 nF Capacitive Load, with Snubber
Optimum values for RS and CS are determined empirically; Table 5 lists a few starting values.
Table 5. Optimum Values for the Snubber Network
CL (pF) RS (Ω) CS (pF)
100~500 500 680 1500 100 330 1600~2000 400 100
Rev. A | Page 12 of 16
AD8603/AD8607/AD8609

PROXIMITY SENSORS

Proximity sensors can be capacitive or inductive and are used in a variety of applications. One of the most common applications is liquid level sensing in tanks. This is particularly popular in pharmaceutical environments where a tank must know when to stop filling or mixing a given liquid. In aerospace applications, these sensors detect the level of oxygen used to propel engines. Whether in a combustible environment or not, capacitive sensors generally use low voltage. The precision and low voltage of the AD8603/AD8607/AD8609 make the parts an excellent choice for such applications.

COMPOSITE AMPLIFIERS

A composite amplifier can provide a very high gain in applications where high closed-loop dc gains are needed. The high gain achieved by the composite amplifier comes at the expense of a loss in phase margin. Placing a small capacitor, C in the feedback in parallel with R2 (Figure 45) improves the phase margin. Picking C
= 50 pF yields a phase margin of
F
about 45° for the values shown in Figure 45.
A composite amplifier can be used to optimize dc and ac characteristics. Figure 46 shows an example using the AD8603 and the AD8541. This circuit offers many advantages. The bandwidth is increased substantially, and the input offset voltage and noise of the AD8541 become insignificant since they are divided by the high gain of the AD8603.
,
F
R1
1k
V
IN
R2
99k
V
EE
V
CC
V
AD8603
V+
V
CC
R3 R4
U5
V+
AD8541
V
V
EE
99k1k
04356-A-041
Figure 45. High Gain Composite Amplifier
R2
100k
V
AD8603
R1
1k
V
IN
EE
R3
V V+
1k
C2
V
CC
V
CC
R4
V+ V
100
AD8541
V
C3
EE
04356-A-042
Figure 46. Low Power Composite Amplifier
The circuit of Figure 46 offers a high bandwidth (nearly double that of the AD8603), a high output current, and a very low power consumption of less than 100 µA.
Rev. A | Page 13 of 16
AD8603/AD8607/AD8609

BATTERY-POWERED APPLICATIONS

The AD8603/AD8607/AD8609 are ideal for battery-powered applications. The parts are tested at 5 V, 3.3 V, 2.7 V, and 1.8 V and are suitable for various applications whether in single or dual supply.
In addition to their low offset voltage and low input bias, the AD8603/AD8607/AD8609 have a very low supply current of 40 µA, making the parts an excellent choice for portable electronics. The TSOT package allows the AD8603 to be used on smaller board spaces.

PHOTODIODES

Photodiodes have a wide range of applications from bar code scanners to precision light meters and CAT scanners. The very low noise and low input bias current of the AD8603/AD8607/ AD8609 make the parts very attractive amplifiers for I-V conversion applications.
network at the output to reduce the noise. The signal bandwidth can be calculated by ½πR2C2 and the closed-loop bandwidth is the intersection point of the open-loop gain and the noise gain.
The circuit shown in Figure 47 has a closed-loop bandwidth of 58 kHz and a signal bandwidth of 16 Hz. Increasing C2 to 50 pF yields a closed-loop bandwidth of 65 kHz, but only 3.2 Hz of signal bandwidth can be achieved.
C2 10pF
R2 1000M
V
CC
1000M
10pF
R1
C1
AD8603
Figure 47
shows a simple photodiode circuit. The feedback capacitor helps the circuit maintain stability. The signal bandwidth can be increased at the expense of an increase in the total noise; a low-pass filter can be implemented by a simple RC
V
EE
Figure 47. Photodiode Circuit
04356-0-044
Rev. A | Page 14 of 16
AD8603/AD8607/AD8609
Y

OUTLINE DIMENSIONS

5.00 (0.1968)
4.80 (0.1890)
4.00 (0.1574)
3.80 (0.1497)
85
6.20 (0.2440)
5.80 (0.2284)
41
1.27 (0.0500) BSC
0.25 (0.0098)
0.10 (0.0040)
COPLANARIT
0.10
CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS (IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN
SEATING
PLANE
COMPLIANT TO JEDEC STANDARDS MS-012AA
1.75 (0.0688)
1.35 (0.0532)
0.51 (0.0201)
0.31 (0.0122)
0.25 (0.0098)
0.17 (0.0067)
0.50 (0.0196)
0.25 (0.0099)
1.27 (0.0500)
0.40 (0.0157)
× 45°
Figure 48. 8-Lead Standard Small Outline Package (SOIC) [R-8]
Dimensions shown in millimeters and (inches)
2.90 BSC
45
0.50
0.30
2.80 BSC
0.95 BSC
1.00 MAX
SEATING PLANE
0.20
0.08
8° 4°
0.60
0.45
0.30
1.60 BSC
0.90
0.87
0.84
0.10 MAX
13
2
PIN 1
1.90 BSC
COMPLIANT TO JEDEC STANDARDS MO-193AB
Figure 49. 5-Lead Thin Small Outline Transistor Package [TSOT ]
(UJ-5)
Dimensions in millimeters
3.00
BSC
85
3.00
BSC
PIN 1
0.65 BSC
0.15
0.00
0.38
0.22
COPLANARITY
0.10
COMPLIANT TO JEDEC STANDARDS MO-187AA
4.90 BSC
4
SEATING PLANE
1.10 MAX
0.23
0.08
8° 0°
0.80
0.60
0.40
Figure 50. 8-Lead MSOP Package (RM-8)
Dimensions in millimeters
Rev. A | Page 15 of 16
AD8603/AD8607/AD8609
8.75 (0.3445)
8.55 (0.3366)
4.00 (0.1575)
3.80 (0.1496)
0.25 (0.0098)
0.10 (0.0039)
COPLANARITY
0.10
CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS (IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN
14
1
1.27 (0.0500) BSC
0.51 (0.0201)
0.31 (0.0122)
COMPLIANT TO JEDEC STANDARDS MS-012AB
8
6.20 (0.2441)
7
5.80 (0.2283)
1.75 (0.0689)
1.35 (0.0531)
SEATING PLANE
0.25 (0.0098)
0.17 (0.0067)
0.50 (0.0197)
0.25 (0.0098)
 
1.27 (0.0500)
0.40 (0.0157)
× 45°

Figure 51. 14-Lead Standard Small Outline Package (SOIC) [R-14]
Dimensions shown in millimeters and (inches)
5.10
5.00
4.90
1.05
1.00
0.80
4.50
4.40
4.30
PIN 1
14
0.65
BSC
0.15
0.05
COMPLIANT TO JEDEC STANDARDS MO-153AB-1
0.30
0.19
8
6.40 BSC
71
1.20 MAX
SEATING PLANE
0.20
0.09
COPLANARITY
0.10
8° 0°
0.75
0.60
0.45
Figure 52. 14-Lead Thin Shrink Small Outline Package (TSSOP) [RU-14]
Dimensions shown in millimeters

ORDERING GUIDE

Model Temperature Range Package Description Package Option Branding
AD8603AUJ-R2 –40°C to +125°C 5-Lead TSOT-23 UJ-5 BFA AD8603AUJ-REEL –40°C to +125°C 5-Lead TSOT-23 UJ-5 BFA AD8603AUJ-REEL7 –40°C to +125°C 5-Lead TSOT-23 UJ-5 BFA AD8607ARM-R2 –40°C to +125°C 8-Lead MSOP RM-8 A00 AD8607ARM-REEL –40°C to +125°C 8-Lead MSOP RM-8 A00 AD8607AR –40°C to +125°C 8-Lead SOIC R-8 AD8607AR-REEL –40°C to +125°C 8-Lead SOIC R-8 AD8607AR-REEL7 –40°C to +125°C 8-Lead SOIC R-8 AD8609AR –40°C to +125°C 14-Lead SOIC R-14 AD8609AR-REEL –40°C to +125°C 14-Lead SOIC R-14 AD8609AR-REEL7 –40°C to +125°C 14-Lead SOIC R-14 AD8609ARU –40°C to +125°C 14-Lead TSSOP RU-14 AR8609ARU-REEL –40°C to +125°C 14-Lead TSSOP RU-14
© 2003 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners.
C04356–0–10/03(A)
Rev. A | Page 16 of 16
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