Low offset voltage: 50 µV max
Low input bias current: 1 pA max
Single-supply operation: 1.8 V to 5 V
Low noise: 22 nV/√Hz
Micropower: 50 µA max
Low distortion
No phase reversal
Unity gain stable
APPLICATIONS
Battery-powered instrumentation
Multipole filters
Sensors
Low power ASIC input or output amplifiers
GENERAL DESCRIPTION
The AD8603/AD8607/AD8609 are, single/dual/quad micropower rail-to-rail input and output amplifiers, respectively, that
features very low offset voltage as well as low input voltage and
current noise.
These amplifiers use a patented trimming technique that
achieves superior precision without laser trimming. The parts
are fully specified to operate from 1.8 V to 5.0 V single supply
or from ±0.9 V to ±2.5 V dual supply. The combination of low
offsets, low noise, very low input bias currents, and low power
consumption make the AD8603/AD8607/AD8609 especially
useful in portable and loop-powered instrumentation.
The ability to swing rail to rail at both the input and output
enables designers to buffer CMOS ADCs, DACs, ASICs, and
other wide output swing devices in low power single-supply
systems.
The AD8603 is available in a tiny 5-lead TSOT-23 package. The
AD8607 is available in 8-lead MSOP and SOIC packages. The
AD8609 is available in 14-lead TSSOP and SOIC packages.
AD8603/AD8607/AD8609
PIN CONFIGURATIONS
V+
1
OUT
AD8603
V–
2
TOP VIEW
(Not to Scale)
+IN
3
Figure 1. 5-Lead TSOT-23 (UJ Suffix)
IN A
V–
1
AD8607
45
OUT A
–
+IN A
Figure 2. 8-Lead MSOP (RM Suffix)
OUT A
1
–IN A
2
+IN A
AD8607
3
V–
4
Figure 3. 8-Lead SOIC (R Suffix)
OUT A
–
+IN A
+IN B
–
OUT B
IN A
IN B
1
AD8609
V+
7
Figure 4. 14-Lead TSSOP (RU Suffix)
1
OUT A
2
–
IN A
3
+IN A
AD8609
4
V+
5
+IN B
6
–IN B
7
OUT B
Figure 5. 14-Lead SOIC (R Suffix)
5
–IN
4
04356-0-001
8
V+
OUT B
–IN B
+IN B
04356-0-045
V+
8
OUT B
7
6
–IN B
+IN B
5
04356-0-047
OUT D
14
–
IN D
+IN D
–
V
+IN C
–
IN C
8
OUT C
04356-0-044
14
OUT D
13
–IN D
12
+IN D
11
V–
10
+IN C
9
–IN C
8
OUT C
04356-0-046
Rev. A
Information furnished by Analog Devices is believed to be accurate and reliable.
However, no responsibility is assumed by Analog Devices for its use, nor for any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication
or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
Voltage Noise Density en f = 1 kHz 25 nV/√Hz
f = 10 kHz 22 nV/√Hz
Current Noise Density in f = 1 kHz 0.05 pA/√Hz
Channel Separation Cs f = 10 kHz –115 dB
f = 100 kHz –110 dB
= 3.3 V @ VCM = 0.5 V and 2.8 V 12 50 µV
S
= 10 kΩ, 0.5 V <VO < 4.5 V
L
= 1 mA 4.95 4.97 V
L
= 10 mA 4.65 4.97 V
L
= 1 mA 16 30 mV
L
= 10 mA 160 250 mV
L
= 0 V 40 50 µA
O
= 10 kΩ 316 kHz
L
= 10 kΩ, RL = 100 kΩ 70 Degrees
L
Rev. A | Page 3 of 16
AD8603/AD8607/AD8609
Table 2. Electrical Characteristics @ VS = 1.8 V, VCM = VS/2, TA = 25°C, unless otherwise noted
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage VOS V
–0.3 V < VCM < +1.8 V 40 300 µV
–40°C < TA < +85°C, –0.3 V < VCM < +1.8 V 500 µV
–40°C < TA < +125°C, –0.3 V < VCM < +1.7 V 700 µV
Offset Voltage Drift ∆VOS/∆T –40°C < TA < +125°C 1 4.5 µV/°C
Input Bias Current IB 0.2 1 pA
–40°C < TA < +85°C 50 pA
–40°C < TA < +125°C 500 pA
Input Offset Current IOS 0.1 0.5 pA
–40°C < TA < +85°C 50 pA
–40°C < TA < +125°C 250 pA
Input Voltage Range IVR –0.3 +1.8 V
Common-Mode Rejection Ratio CMRR 0 V < VCM < 1.8 V 80 98 dB
–40°C < TA < +85°C 70 dB
Large Signal Voltage Gain AVO R
AD8603 150 3000 V/mV
AD8607/AD8609 100 2000 V/mV
Input Capacitance C
C
2.1 pF
DIFF
3.8 pF
CM
OUTPUT CHARACTERISTICS
Output Voltage High VOH I
–40°C to +125°C 1.6 V
Output Voltage Low VOL I
–40°C to +125°C 80 mV
Output Current I
Closed-Loop Output Impedance Z
±7 mA
OUT
f = 10 kHz, AV = 1 36 Ω
OUT
POWER SUPPLY
Power Supply Rejection Ratio PSRR 1.8 V < VS < 5 V 80 100 dB
Supply Current/Amplifier ISY V
–40°C < TA < +85°C 60 µA
DYNAMIC PERFORMANCE
Slew Rate SR RL = 10 kΩ 0.1 V/µs
Settling Time 0.1% tS G= ±1, 1 V Step 9.2 µs
Gain Bandwidth Product GBP RL = 100 kΩ 385 kHz
R
Phase Margin ØO R
NOISE PERFORMANCE
Peak-to-Peak Noise e
0.1 Hz to 10 Hz 2.3 3.5 µV
n p-p
Voltage Noise Density en f = 1 kHz 25 nV/√Hz
f = 10 kHz 22 nV/√Hz
Current Noise Density in f = 1 kHz 0.05 pA/√Hz
= 3.3 V @ VCM = 0.5 V and 2.8 V 12 50 µV
S
= 10 kΩ, 0.5 V <VO < 4.5 V
L
= 1 mA 1.65 1.72 V
L
= 1 mA 38 60 mV
L
= 0 V 40 50 µA
O
= 10 kΩ 316 kHz
L
= 10 kΩ, RL = 100 kΩ 70 Degrees
L
Channel Separation Cs f = 10 kHz –115 dB
f = 100 kHz –110 dB
Rev. A | Page 4 of 16
AD8603/AD8607/AD8609
ABSOLUTE MAXIMUM RATINGS
Table 3. AD8603/AD8607/AD8609 Stress Ratings
Parameter Rating
Supply Voltage 6 V
Input Voltage GND to VS
Differential Input Voltage ±6 V
Output Short-Circuit Duration to GND Indefinite
Storage Temperature Range
All Packages –65°C to +150°C
Lead Temperature Range (Soldering, 60 Sec) 300°C
Operating Temperature Range –40°C to +125°C
Junction Temperature Range
All Packages –65°C to +150°C
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although these parts feature
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
Stresses above those listed under Absolute Maximum Ratings may cause
permanent damage to the device. This is a stress rating only; functional
operation of the device at these or any other conditions above those listed
in the operational sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device
reliability.
2
Absolute maximum ratings apply at 25°C, unless otherwise noted.
3
θJA is specified for the worst-case conditions, i.e., θJA is specified for device
soldered in circuit board for surface-mount packages.
3
θJC Unit
JA
Rev. A | Page 5 of 16
AD8603/AD8607/AD8609
TYPICAL PERFORMANCE CHARACTERISTICS
2600
VS = 5V
2400
TA = 25°C
2200
VCM = 0V to 5V
2000
1800
1600
1400
1200
1000
800
600
NUMBER OF AMPLIFIERS
400
200
0
–270
–210
–150–303090210 270–90
VOS (µV)
Figure 6. Input Offset Voltage Distribution
30
0150
04356-0-002
300
VS = 3.3V
250
TA = 25°C
200
150
100
50
0
(µV)
OS
–50
V
–100
–150
–200
–250
–300
0.0
0.92.13.0
0.60.31.52.72.41.81.2
VCM(V)
VCM (V)
Figure 9. Input Offset Voltage vs. Common-Mode Voltage
400
04356-0-005
3.3
NUMBERS OF AMPLIFIERS
25
20
15
10
5
0
0
0.4 0.8 1.22.0 2.4 2.83.6 4.0 4.4 4.8
1.63.2
TCVOS (µV/°C)
VS= ±2.5V
= –40°C TO +125°C
T
A
= 0V
V
CM
Figure 7. Input Offset Voltage Drift Distribution
300
VS = 5V
250
TA = 25°C
200
150
100
50
0
(µV)
OS
–50
V
–100
–150
–200
–250
–300
0.0
1.53.55.0
1.00.52.54.54.03.02.0
VCM (V)
Figure 8. Input Offset Voltage vs. Common-Mode Voltage
04356-0-003
04356-0-004
350
300
250
200
150
100
INPUT BIAS CURRENT (pA)
VS= ±2.5V
50
0
0
25
50100125
TEMPERATURE (°C)
75
Figure 10. Input Bias vs. Temperature
1000
VS= 5V
= 25°C
T
100
10
1
0.1
OUTPUT VOLTAGE TO SUPPLY RAIL (mV)
0.01
0.001
A
SOURCE
0.010.11
LOAD CURRENT (mA)
SINK
Figure 11. Output Voltage to Supply Rail vs. Load Current
04356-0-006
04356-0-007
10
Rev. A | Page 6 of 16
AD8603/AD8607/AD8609
350
= 5V
V
S
= 25°C
T
A
300
DD–VOH
V
@ 10mA LOAD
@ 10mA LOAD
OL
V
DD–VOH
203550 658095 1105
TEMPERATURE (°C)
@ 1mA LOAD
VOL@ 1mA LOAD
250
200
150
100
OUTPUT SWING (mV)
V
50
0
–25 –10125
–40
Figure 12. Output Voltage Swing vs. Temperature
100
VS= ±2.5V
80
RL= 100kΩ
CL= 20pF
φ = 70.9°
60
40
20
0
–20
–40
OPEN-LOOP GAIN (dB)
–60
–80
–100
1k10k100k1M10M
FREQUENCY (Hz)
Figure 13. Open-Loop Gain and Phase vs. Frequency
5.0
VS= 5V
4.5
VIN= 4.9V p-p
T = 25°C
4.0
A
= 1
V
3.5
3.0
2.5
2.0
1.5
OUTPUT SWING (V p-p)
1.0
0.5
0.0
0.01
0.11100
FREQUENCY (kHz)
10
Figure 14. Closed-Loop Output Voltage Swing vs. Frequency
225
180
135
90
45
0
–45
–90
–135
–180
–225
04356-0-008
PHASE (Degree)
04356-0-010
04356-0-011
1925
OUTPUT IMPEDANCE (Ω)
1750
1575
1400
1225
1050
875
700
525
350
175
100
VS= ±2.5V, ±0.9V
A = 100
A = 10
1k100k
10k
FREQUENCY (Hz)
Figure 15. Output Impedance vs. Frequency
140
120
100
80
60
40
20
CMRR (dB)
0
–20
–40
–60
100
1k10k
FREQUENCY (Hz)
Figure 16. Common-Mode Rejection Ratio vs. Frequency
140
VS= ±2.5V
120
100
80
60
40
20
PSRR (dB)
0
–20
–40
–60
101001k10k100k
FREQUENCY (Hz)
Figure 17. PSRR v s. Frequency
A = 1
04356-0-012
VS = ±2.5V
04356-0-013
100k
04356-0-014
Rev. A | Page 7 of 16
AD8603/AD8607/AD8609
60
VS= 5V
50
40
30
20
10
SMALL SIGNAL OVERSHOOT (%)
OS–
OS+
VS = 5V, 1.8V
VOLTAGE NOISE (1µV/DIV)
0
10
LOAD CAPACITANCE (pF)
1001000
Figure 18. Small Signal Overshoot vs. Load Capacitance
60
55
VS= ±2.5V
50
45
40
35
30
25
20
SUPPLY CURRENT (µA)
15
10
5
0
–40
–10 53565
2080–2550
TEMPERATURE (°C)
Figure 19. Supply Current vs. Temperature
100
90
80
70
60
50
40
30
SUPPLY CURRENT (µA)
20
10
0
0
1.0
2.04.05.0
SUPPLY VOLTAGE (V)
TA= 25°C
3.0
Figure 20. Supply Current vs. Supply Voltage
95 110 125
04356-0-015
04356-0-016
04356-0-017
TIME (1s/DIV)
Figure 21. 0.1 Hz to 10 Hz Input Voltage Noise
VS = 5V
RL = 10k
Ω
CL = 200pF
AV = 1
VOLTAGE (50mV/DIV)
TIME (4
Figure 22. Small Signal Transient
VS = 5V
RL = 10k
Ω
CL = 200pF
= 1
A
V
VOLTAGE (1V/DIV)
TIME (20µs/DIV)
Figure 23. Large Signal Transient
µ
s/DIV)
04356-0-018
04356-0-019
04356-0-020
Rev. A | Page 8 of 16
AD8603/AD8607/AD8609
VS= ±2.5V
= 10kΩ
R
L
= 100
A
+2.5V
0V
0V
VOLTAGE (50mV/DIV)
–50mV
V
V
IN
= 50mV
TIME (4µs/DIV))
TIME (40µs/DIV))
Figure 24. Negative Overload Recovery
VS = ±2.5V
= 10kΩ
R
L
= 100
A
V
= 50mV
V
IN
0V
0V
VOLTAGE (50mV/DIV)
–50mV
TIME (4µs/DIV)
Figure 25. Positive Overload Recovery
168
144
120
96
72
48
24
VOLTAGE NOISE DENSITY (nV/ Hz)
0
0.11.00.2 0.3 0.4 0.5 0.6 0.7 0.8 0.90
FREQUENCY (kHz)
Figure 26. Voltage Noise Density vs. Frequency
04356-0-021
+2.5V
04356-0-022
VS = ±2.5V
04356-0-045
176
154
132
110
88
66
44
22
VOLTAGE NOISE DENSITY (nV/ Hz)
0
110234567890
FREQUENCY (kHz)
VS = ±2.5V
Figure 27. Voltage Noise Density vs. Frequency
800
NUMBER OF AMPLIFIERS
750
700
650
600
550
500
450
400
350
300
250
200
150
100
50
0
–300
–24060240–180 –120120 180300
Figure 28. V
0–60
VOS (µV)
Distribution
OS
VS = 1.8V
= 25°C
T
A
= 0V to 1.8V
V
CM
300
VS = 1.8V
250
200
150
100
(µV)
OS
–50
V
–100
–150
–200
–250
–300
= 25°C
T
A
50
0
0.0
0.9
0.60.31.51.81.2
VCM(V)
VCM (V)
Figure 29. Input Offset Voltage vs. Common-Mode Voltage
04356-0-046
04356-0-025
04356-0-026
Rev. A | Page 9 of 16
AD8603/AD8607/AD8609
1000
VS= 1.8V
= 25°C
T
A
100
10
1
0.1
OUTPUT VOLTAGE TO SUPPLY RAIL (mV)
0.01
0.001
SOURCE
SINK
0.010.11
LOAD CURRENT (mA)
Figure 30. Output Voltage to Supply Rail vs. Load Current
10
04356-0-027
100
VS= ±0.9V
RL= 100kΩ
80
CL= 20pF
φ = 70°
60
40
20
0
–20
–40
OPEN-LOOP GAIN (dB)
–60
–80
–100
1101001M10M
Figure 33. Open-Loop Gain and Phase vs. Frequency
100
90
80
70
60
50
40
30
OUTPUT SWING (mV)
20
10
0
–40
–25
VS = 1.8V
VDD– VOH@ 1mA LOAD
VOL@ 1mA LOAD
–10
535125
20
TEMPERATURE (°C)
50 65 80 95 110
04356-0-028
140
120
VS= 1.8V
100
80
60
40
20
CMRR (dB)
0
–20
–40
–60
1001k10k100k
FREQUENCY (Hz)
FREQUENCY (Hz)
225
180
135
90
45
0
–45
–90
–135
–180
–225
PHASE (Degree)
04356-0-030
04356-0-031
Figure 31. Output Voltage Swing vs. Temperature
60
VS = 1.8V
= 25°C
T
A
50
40
30
20
10
SMALL SIGNAL OVERSHOOT (%)
= 1
A
V
OS–
0
10
LOAD CAPACITANCE (pF)
1001000
Figure 32. Small Signal Overshoot vs. Load Capacitance
OS+
04356-0-029
Rev. A | Page 10 of 16
Figure 34. Common-Mode Rejection Ratio vs. Frequency
1.8
VS= 1.8V
VIN= 1.7V p–p
1.5
T= 25°C
)
P-P
OUTPUT SWING (V
AV= 1
1.2
0.9
0.6
0.3
0.0
0.010.1110010
FREQUENCY (kHz)
Figure 35. Closed-Loop Output Voltage Swing vs. Frequency
04356-0-032
AD8603/AD8607/AD8609
VS = 1.8V
= 10kΩ
R
L
= 200pF
C
L
= 1
A
V
VOLTAGE (50mV/DIV)
Figure 36. Small Signal Transient
VS= 1.8V
RL= 10kΩ
= 200pF
C
L
= 1
A
V
TIME (4µs/DIV)
04356-0-033
–20
–40
–60
176
154
132
110
88
66
44
22
VOLTAGE NOISE DENSITY (nV/ Hz)
0
110234567890
FREQUENCY (kHz)
VS = ±0.9V
04356-0-048
Figure 39. Voltage Noise Density
0
VS = ±2.5V, ±0.9V
–80
VOLTAGE (500mV/DIV)
04356-0-034
TIME (20µs/DIV)
Figure 37. Large Signal Transient
168
140
112
84
56
28
VOLTAGE NOISE DENSITY (nV/ Hz)
0
0.11.00.2 0.3 0.4 0.5 0.6 0.7 0.8 0.90
FREQUENCY (kHz)
VS = ±0.9V
04356-0-047
–100
CHANNEL SEPARATION (dB)
–120
–140
100
1k10k100k
Figure 40. Channel Separation
FREQUENCY (Hz)
04356-A-043
1M
Figure 38. Voltage Noise Density
Rev. A | Page 11 of 16
AD8603/AD8607/AD8609
APPLICATIONS
NO PHASE REVERSAL
The AD8603/AD8607/AD8609 do not exhibit phase inversion
even when the input voltage exceeds the maximum input
common-mode voltage. Phase reversal can cause permanent
damage to the amplifier, resulting in system lockups. The
AD8603/AD8607/AD8609 can handle voltages of up to 1 V
over the supply.
VS = ±2.5V
V
V
IN
V
OUT
IN
A
V
R
L
= 6V p-p
= 1
= 10kΩ
The use of the snubber circuit is usually recommended for unity
gain configurations. Higher gain configurations help improve
the stability of the circuit. Figure 44 shows the same output
response with the snubber in place.
VS = ±0.9V
V
= 100mV
IN
C
= 2nF
L
R
= 10kΩ
L
VOLTAGE (1V/DIV)
04356-0-037
TIME (4µs/DIV)
Figure 41. No Phase Response
INPUT OVERVOLTAGE PROTECTION
If a voltage 1 V higher than the supplies is applied at either
input, the use of a limiting series resistor is recommended. If
both inputs are used, each one should be protected with a series
resistor.
To ensure good protection, the current should be limited to a
maximum of 5 mA. The value of the limiting resistor can be
determined from the equation
– VS)/(RS + 200 Ω) ≤ 5 mA
(V
IN
DRIVING CAPACITIVE LOADS
The AD8603/AD8607/AD8609 are capable of driving large
capacitive loads without oscillating. Figure 42 shows the output
of the AD8603/AD8607/AD8609 in response to a 100 mV input
signal, with a 2 nF capacitive load.
Although it is configured in positive unity gain (the worst case),
the AD8603 shows less than 20% overshoot. Simple additional
circuitry can eliminate ringing and overshoot.
One technique is the snubber network, which consists of a
series RC and a resistive load (see Figure 43). With the snubber
in place, the AD8603/AD8607/AD8609 are capable of driving
capacitive loads of 2 nF with no ringing and less than 3%
overshoot.
04356-0-038
Figure 42. Output Response to a 2 nF Capacitive Load, without Snubber
V
EE
–
V
V+
R
S
200mV
+
–
150Ω
V
CC
C
S
47pF
C
L
04356-A-039
Figure 43. Snubber Network
VSY = ±0.9V
V
= 100mV
IN
C
= 2nF
L
R
= 10kΩ
L
R
= 150Ω
S
C
= 470pF
S
04356-0-040
Figure 44. Output Response to a 2 nF Capacitive Load, with Snubber
Optimum values for RS and CS are determined empirically;
Table 5 lists a few starting values.
Table 5. Optimum Values for the Snubber Network
CL (pF) RS (Ω) CS (pF)
100~500 500 680
1500 100 330
1600~2000 400 100
Rev. A | Page 12 of 16
AD8603/AD8607/AD8609
PROXIMITY SENSORS
Proximity sensors can be capacitive or inductive and are used in
a variety of applications. One of the most common applications
is liquid level sensing in tanks. This is particularly popular in
pharmaceutical environments where a tank must know when to
stop filling or mixing a given liquid. In aerospace applications,
these sensors detect the level of oxygen used to propel engines.
Whether in a combustible environment or not, capacitive
sensors generally use low voltage. The precision and low voltage
of the AD8603/AD8607/AD8609 make the parts an excellent
choice for such applications.
COMPOSITE AMPLIFIERS
A composite amplifier can provide a very high gain in
applications where high closed-loop dc gains are needed. The
high gain achieved by the composite amplifier comes at the
expense of a loss in phase margin. Placing a small capacitor, C
in the feedback in parallel with R2 (Figure 45) improves the
phase margin. Picking C
= 50 pF yields a phase margin of
F
about 45° for the values shown in Figure 45.
A composite amplifier can be used to optimize dc and ac
characteristics. Figure 46 shows an example using the AD8603
and the AD8541. This circuit offers many advantages. The
bandwidth is increased substantially, and the input offset
voltage and noise of the AD8541 become insignificant since
they are divided by the high gain of the AD8603.
,
F
R1
1kΩ
V
IN
R2
99kΩ
V
EE
V
CC
V
–
AD8603
V+
V
CC
R3R4
U5
V+
AD8541
V
–
V
EE
99kΩ1kΩ
04356-A-041
Figure 45. High Gain Composite Amplifier
R2
100kΩ
V
AD8603
R1
1kΩ
V
IN
EE
R3
–
V
V+
1kΩ
C2
V
CC
V
CC
R4
V+
V
–
100Ω
AD8541
V
C3
EE
04356-A-042
Figure 46. Low Power Composite Amplifier
The circuit of Figure 46 offers a high bandwidth (nearly double
that of the AD8603), a high output current, and a very low
power consumption of less than 100 µA.
Rev. A | Page 13 of 16
AD8603/AD8607/AD8609
BATTERY-POWERED APPLICATIONS
The AD8603/AD8607/AD8609 are ideal for battery-powered
applications. The parts are tested at 5 V, 3.3 V, 2.7 V, and 1.8 V
and are suitable for various applications whether in single or
dual supply.
In addition to their low offset voltage and low input bias, the
AD8603/AD8607/AD8609 have a very low supply current of
40 µA, making the parts an excellent choice for portable
electronics. The TSOT package allows the AD8603 to be used
on smaller board spaces.
PHOTODIODES
Photodiodes have a wide range of applications from bar code
scanners to precision light meters and CAT scanners. The very
low noise and low input bias current of the AD8603/AD8607/
AD8609 make the parts very attractive amplifiers for I-V
conversion applications.
network at the output to reduce the noise. The signal bandwidth
can be calculated by ½πR2C2 and the closed-loop bandwidth is
the intersection point of the open-loop gain and the noise gain.
The circuit shown in Figure 47 has a closed-loop bandwidth of
58 kHz and a signal bandwidth of 16 Hz. Increasing C2 to 50 pF
yields a closed-loop bandwidth of 65 kHz, but only 3.2 Hz of
signal bandwidth can be achieved.
C2 10pF
R2 1000MΩ
V
CC
1000MΩ
10pF
R1
C1
AD8603
Figure 47
shows a simple photodiode circuit. The feedback
capacitor helps the circuit maintain stability. The signal
bandwidth can be increased at the expense of an increase in the
total noise; a low-pass filter can be implemented by a simple RC
V
EE
Figure 47. Photodiode Circuit
04356-0-044
Rev. A | Page 14 of 16
AD8603/AD8607/AD8609
Y
OUTLINE DIMENSIONS
5.00 (0.1968)
4.80 (0.1890)
4.00 (0.1574)
3.80 (0.1497)
85
6.20 (0.2440)
5.80 (0.2284)
41
1.27 (0.0500)
BSC
0.25 (0.0098)
0.10 (0.0040)
COPLANARIT
0.10
CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS
(IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR
REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN
SEATING
PLANE
COMPLIANT TO JEDEC STANDARDS MS-012AA
1.75 (0.0688)
1.35 (0.0532)
0.51 (0.0201)
0.31 (0.0122)
0.25 (0.0098)
0.17 (0.0067)
0.50 (0.0196)
0.25 (0.0099)
8°
1.27 (0.0500)
0°
0.40 (0.0157)
× 45°
Figure 48. 8-Lead Standard Small Outline Package (SOIC) [R-8]
Dimensions shown in millimeters and (inches)
2.90 BSC
45
0.50
0.30
2.80 BSC
0.95 BSC
1.00 MAX
SEATING
PLANE
0.20
0.08
8°
4°
0.60
0.45
0.30
1.60 BSC
0.90
0.87
0.84
0.10 MAX
13
2
PIN 1
1.90
BSC
COMPLIANT TO JEDEC STANDARDS MO-193AB
Figure 49. 5-Lead Thin Small Outline Transistor Package [TSOT ]
(UJ-5)
Dimensions in millimeters
3.00
BSC
85
3.00
BSC
PIN 1
0.65 BSC
0.15
0.00
0.38
0.22
COPLANARITY
0.10
COMPLIANT TO JEDEC STANDARDS MO-187AA
4.90
BSC
4
SEATING
PLANE
1.10 MAX
0.23
0.08
8°
0°
0.80
0.60
0.40
Figure 50. 8-Lead MSOP Package (RM-8)
Dimensions in millimeters
Rev. A | Page 15 of 16
AD8603/AD8607/AD8609
8.75 (0.3445)
8.55 (0.3366)
4.00 (0.1575)
3.80 (0.1496)
0.25 (0.0098)
0.10 (0.0039)
COPLANARITY
0.10
CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS
(IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR
REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN
14
1
1.27 (0.0500)
BSC
0.51 (0.0201)
0.31 (0.0122)
COMPLIANT TO JEDEC STANDARDS MS-012AB
8
6.20 (0.2441)
7
5.80 (0.2283)
1.75 (0.0689)
1.35 (0.0531)
SEATING
PLANE
0.25 (0.0098)
0.17 (0.0067)
0.50 (0.0197)
0.25 (0.0098)
8°
0°
1.27 (0.0500)
0.40 (0.0157)
× 45°
Figure 51. 14-Lead Standard Small Outline Package (SOIC) [R-14]
Dimensions shown in millimeters and (inches)
5.10
5.00
4.90
1.05
1.00
0.80
4.50
4.40
4.30
PIN 1
14
0.65
BSC
0.15
0.05
COMPLIANT TO JEDEC STANDARDS MO-153AB-1
0.30
0.19
8
6.40
BSC
71
1.20
MAX
SEATING
PLANE
0.20
0.09
COPLANARITY
0.10
8°
0°
0.75
0.60
0.45
Figure 52. 14-Lead Thin Shrink Small Outline Package (TSSOP) [RU-14]
Dimensions shown in millimeters
ORDERING GUIDE
Model Temperature Range Package Description Package Option Branding
AD8603AUJ-R2 –40°C to +125°C 5-Lead TSOT-23 UJ-5 BFA
AD8603AUJ-REEL –40°C to +125°C 5-Lead TSOT-23 UJ-5 BFA
AD8603AUJ-REEL7 –40°C to +125°C 5-Lead TSOT-23 UJ-5 BFA
AD8607ARM-R2 –40°C to +125°C 8-Lead MSOP RM-8 A00
AD8607ARM-REEL –40°C to +125°C 8-Lead MSOP RM-8 A00
AD8607AR –40°C to +125°C 8-Lead SOIC R-8
AD8607AR-REEL –40°C to +125°C 8-Lead SOIC R-8
AD8607AR-REEL7 –40°C to +125°C 8-Lead SOIC R-8
AD8609AR –40°C to +125°C 14-Lead SOIC R-14
AD8609AR-REEL –40°C to +125°C 14-Lead SOIC R-14
AD8609AR-REEL7 –40°C to +125°C 14-Lead SOIC R-14
AD8609ARU –40°C to +125°C 14-Lead TSSOP RU-14
AR8609ARU-REEL –40°C to +125°C 14-Lead TSSOP RU-14