Datasheet AD8574, AD8572, AD8571 Datasheet (Analog Devices)

Page 1
Zero-Drift, Single-Supply, Rail-to-Rail
1 2 3 4
8 7 6 5
AD8571
2IN A
V2
+IN A
V+ OUT A
NC
NC
NC
NC = NO CONNECT
1 2 3 4
8 7 6 5
AD8572
2IN A
V2
+IN A
OUT B
2IN B
V+
+IN B
OUT A
14
13
12
11
10
9
8
1
2
3
4
5
6
7
2IN A
+IN A
V+
+IN B
2IN B
OUT B
OUT D
2IN D
+IN D
V2
+IN C
2IN C
OUT C
OUT A
AD8574
2IN A 1IN A
V2
V+ OUT A
NC
1
45
8
AD8571
NC
NC = NO CONNECT
NC
a
Input/Output Operational Amplifiers
FEATURES Low Offset Voltage: 1 ␮V Input Offset Drift: 0.005 ␮V/ⴗC Rail-to-Rail Input and Output Swing 5 V/2.7 V Single-Supply Operation High Gain, CMRR, PSRR: 130 dB Ultralow Input Bias Current: 20 pA Low Supply Current: 750 A/Op Amp Overload Recovery Time: 50 ␮s No External Capacitors Required
APPLICATIONS Temperature Sensors Pressure Sensors Precision Current Sensing Strain Gage Amplifiers Medical Instrumentation Thermocouple Amplifiers
GENERAL DESCRIPTION
This new family of amplifiers has ultralow offset, drift and bias current. The AD8571, AD8572 and AD8574 are single, dual and quad amplifiers featuring rail-to-rail input and output swings. All are guaranteed to operate from 2.7 V to 5 V single supply.
The AD857x family provides the benefits previously found only in expensive autozeroing or chopper-stabilized amplifiers. Using Analog Devices’ new topology these new zero-drift amplifiers combine low cost with high accuracy. (No external capacitors are required.) In addition, using a patented spread-spectrum autozero technique, the AD857x family virtually eliminates the intermodulation effects from interaction of the chopping function with the signal frequency in ac applications.
With an offset voltage of only 1 µV and drift of 0.005 µV/°C, the
AD8571 is perfectly suited for applications where error sources cannot be tolerated. Position, and pressure sensors, medical equipment, and strain gage amplifiers benefit greatly from nearly zero drift over their operating temperature range. Many more systems require the rail-to-rail input and output swings provided by the AD857x family.
The AD857x family is specified for the extended industrial/automotive
(–40°C to +125°C) temperature range. The AD8571 single is
available in 8-lead MSOP and narrow 8-lead SOIC packages. The AD8572 dual amplifier is available in 8-lead narrow SO and 8-lead TSSOP surface mount packages. The AD8574 quad is available in narrow 14-lead SOIC and 14-lead TSSOP packages.
AD8571/AD8572/AD8574
PIN CONFIGURATIONS
8-Lead MSOP
(RM Suffix)
8-Lead TSSOP
(RU Suffix)
V2
1
AD8572
4
OUT A
2IN A
+IN A
14-Lead TSSOP
(RU Suffix)
V1
1
AD8574
78
OUT A
2IN A 1IN A
1N B
2IN B
OUT B
8
V+ OUT B
2IN B
+IN B
5
OUT D
14
2IN D 1IN D
V2
1IN C 2IN C
OUT C
8-Lead SOIC
8-Lead SOIC
(R Suffix)
14-Lead SOIC
(R Suffix)
(R Suffix)
REV. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 World Wide Web Site: http://www.analog.com Fax: 781/326-8703 © Analog Devices, Inc., 1999
Page 2
AD8571/AD8572/AD8574–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
(VS = 5 V, VCM = 2.5 V, VO = 2.5 V, TA = 25C unless otherwise noted)
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS␣
Offset Voltage V
Input Bias Current I
Input Offset Current I
B
OS
OS
–40°C T –40°C T –40°C ≤ T
+125°C10µV
A
+125°C 1.0 1.5 nA
A
+125°C 150 200 pA
A
15 µV
10 50 pA
20 70 pA
Input Voltage Range 05V Common-Mode Rejection Ratio CMRR V
Large Signal Voltage Gain
1
A
VO
= 0 V to 5 V 120 140 dB
CM
–40°C ≤ T
R
= 10 k , V
L
–40°C ≤ T
+125°C 115 130 dB
A
= 0.3 V to 4.7 V 125 145 dB
O
+125°C 120 135 dB
A
Offset Voltage Drift ∆VOS/T –40°C TA +125°C 0.005 0.04 µV/°C
OUTPUT CHARACTERISTICS
Output Voltage High V
OH
R
= 100 k to GND 4.99 4.998 V
L
–40°C to +125°C 4.99 4.997 V
= 10 k to GND 4.95 4.98 V
R
L
–40°C to +125°C 4.95 4.975 V
R
Output Voltage Low V
OL
= 100 k to V+ 1 10 mV
L
–40°C to +125°C210mV
= 10 k to V+ 10 30 mV
R
L
–40°C to +125°C1530mV
Short Circuit Limit I
SC
±25 ±50 mA
–40°C to +125°C ±40 mA
Output Current I
O
±30 mA
–40°C to +125°C ±15 mA
POWER SUPPLY␣
Power Supply Rejection Ratio PSRR V
Supply Current/Amplifier I
SY
= 2.7 V to 5.5 V 120 130 dB
S
–40°C ≤ T
V
= 0 V 850 975 µA
O
+125°C 115 130 dB
A
–40°C TA ≤ +125°C 1,000 1,075 µA
DYNAMIC PERFORMANCE␣
Slew Rate SR R
= 10 k 0.4 V/µs
L
Overload Recovery Time 0.05 0.3 ms Gain Bandwidth Product GBP 1.5 MHz
NOISE PERFORMANCE␣
Voltage Noise e
Voltage Noise Density e Current Noise Density i
NOTE
1
Gain testing is highly dependent upon test bandwidth.
Specifications subject to change without notice.
p–p 0 Hz to 10 Hz 1.3 µV p–p
n
p–p 0 Hz to 1 Hz 0.41 µV p–p
e
n
n
n
f = 1 kHz 51 nV/Hz f = 10 Hz 2 fA/Hz
–2– REV. 0
Page 3
AD8571/AD8572/AD8574
ELECTRICAL CHARACTERISTICS
(VS = 2.7 V, VCM = 1.35 V, VO = 1.35 V, TA = 25C unless otherwise noted)
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS␣
Offset Voltage V
Input Bias Current I
Input Offset Current I
B
OS
OS
–40°C T –40°C T –40°C ≤ T
+125°C10µV
A
+125°C 1.0 1.5 nA
A
+125°C 150 200 pA
A
15 µV
10 50 pA
10 50 pA
Input Voltage Range 0 2.7 V Common-Mode Rejection Ratio CMRR V
Large Signal Voltage Gain
1
A
VO
= 0 V to 2.7 V 115 130 dB
CM
–40°C ≤ T
R
= 10 k , V
L
–40°C ≤ T
+125°C 110 130 dB
A
= 0.3 V to 2.4 V 110 140 dB
O
+125°C 105 130 dB
A
Offset Voltage Drift ∆VOS/T –40°C TA +125°C 0.005 0.04 µV/°C
OUTPUT CHARACTERISTICS
Output Voltage High V
OH
R
= 100 k to GND 2.685 2.697 V
L
–40°C to +125°C 2.685 2.696 V
= 10 k to GND 2.67 2.68 V
R
L
–40°C to +125°C 2.67 2.675 V
R
Output Voltage Low V
OL
= 100 k to V+ 1 10 mV
L
–40°C to +125°C210mV
= 10 k to V+ 10 20 mV
R
L
–40°C to +125°C1520mV
Short Circuit Limit I
SC
±10 ±15 mA
–40°C to +125°C ±10 mA
Output Current I
O
±10 mA
–40°C to +125°C ±5mA
POWER SUPPLY␣
Power Supply Rejection Ratio PSRR V
Supply Current/Amplifier I
SY
= 2.7 V to 5.5 V 120 130 dB
S
–40°C ≤ T
V
= 0 V 750 900 µA
O
+125°C 115 130 dB
A
–40°C TA +125°C 950 1,000 µA
DYNAMIC PERFORMANCE␣
Slew Rate SR R
= 10 k 0.5 V/µs
L
Overload Recovery Time 0.05 ms Gain Bandwidth Product GBP 1 MHz
NOISE PERFORMANCE␣
Voltage Noise e Voltage Noise Density e Current Noise Density i
NOTE
1
Gain testing is highly dependent upon test bandwidth.
Specifications subject to change without notice.
p–p 0 Hz to 10 Hz 2.0 µV p–p
n
n
n
f = 1 kHz 94 nV/Hz f = 10 Hz 2 fA/Hz
–3–REV. 0
Page 4
AD8571/AD8572/AD8574
WARNING!
ESD SENSITIVE DEVICE
ABSOLUTE MAXIMUM RATINGS
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 V
Input Voltage . . . . . . . . . . . . . . . . . . . . . . GND to V
Differential Input Voltage
2
. . . . . . . . . . . . . . . . . . . . . . ±5.0 V
ESD (Human Body Model) . . . . . . . . . . . . . . . . . . . . . 2,000 V
Output Short-Circuit Duration to GND . . . . . . . . . Indefinite
Storage Temperature Range
RM, RU and R Packages . . . . . . . . . . . . . –65°C to +150°C
Operating Temperature Range
AD8571A/AD8572A/AD8574A . . . . . . . . –40°C to +125°C
Junction Temperature Range
RM, RU and R Packages . . . . . . . . . . . . . –65°C to +150°C
Lead Temperature Range (Soldering, 60 sec) . . . . . . . . 300°C
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating condi­tions for extended periods may affect device reliability.
2
Differential input voltage is limited to ±5.0 V or the supply voltage, whichever is less.
1
+ 0.3 V
S
ORDERING GUIDE
Package Type
1
JA
JC
Unit
8-Lead MSOP (RM) 190 44 °C/W 8-Lead TSSOP (RU) 240 43 °C/W 8-Lead SOIC (R) 158 43 °C/W 14-Lead TSSOP (RU) 180 36 °C/W 14-Lead SOIC (R) 120 36 °C/W
NOTE
1
θJA is specified for worst-case conditions, i.e., θ
for P-DIP packages, θ
SOIC and TSSOP packages.
is specified for device soldered in circuit board for
JA
is specified for device in socket
JA
Temperature Package Package
Model Range Description Option Brand
AD8571ARM
AD8571AR –40°C to +125°C 8-Lead SOIC SO-8
AD8572ARU
AD8572AR –40°C to +125°C 8-Lead SOIC SO-8
AD8574ARU
2
–40°C to +125°C 8-Lead MSOP RM-8 AJA
3
–40°C to +125°C 8-Lead TSSOP RU-8
3
–40°C to +125°C 14-Lead TSSOP RU-14
AD8574AR –40°C to +125°C 14-Lead SOIC SO-14
NOTES
1
Due to package size limitations, these characters represent the part number.
2
Available in reels only. 1,000 or 2,500 pieces per reel.
3
Available in reels only. 2,500 pieces per reel.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AD8571/AD8572/AD8574 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
1
–4– REV. 0
Page 5
COMMON-MODE VOLTAGE – V
INPUT BIAS CURRENT – pA
1,500
22,000
01
5
234
1,000
500
0
21,000
21,500
2500
VS = 5V T
A
= 1258C
LOAD CURRENT – mA
10
0.1
0.001
OUTPUT VOLTAGE – mV
0.1
110
1
100
10k
SOURCE
SINK
VS = 5V T
A
= 258C
100
1k
0.0001 0.01 TEMPERATURE – 8C
SUPPLY CURRENT – mA
1.0
0.8
0
275 250
125
225
0
25 50 75 100
0.6
0.4
0.2
150
5V
2.7V
Typical Performance Characteristics–
AD8571/AD8572/AD8574
180 160
140
120 100
80 60
NUMBER OF AMPLIFIERS
40
20
0
22.5
21.5 20.5
OFFSET VOLTAGE – mV
0.5
VS = 2.7V VCM = 1.35V T
= 258C
A
1.5
2.5
Figure 1. Input Offset Voltage Distribution at 2.7 V
180 160
140
120 100
80 60
NUMBER OF AMPLIFIERS
40
20
0
22.5
21.5 20.5
OFFSET VOLTAGE – mV
VS = 5V VCM = 2.5V T
= 258C
A
0.5 2.5
1.5
Figure 4. Input Offset Voltage Distribution at 5 V
50
VS = 5V
40
T
= 2408C, +258C, +858C
A
30
20
10
0
210
INPUT BIAS CURRENT – pA
220
230
01
INPT MM
234
N-M
DE V
+858C
+258C
2408C
LTA
E – V
Figure 2. Input Bias Current vs. Common-Mode Voltage
12
VS = 5V
10
8
6
4
NUMBER OF AMPLIFIERS
2
0
01 6
INPUT OFFSET DRIFT – nV/8C
VCM = 2.5V T
= 2408C TO +1258C
A
234 5
Figure 5. Input Offset Voltage Drift Distribution at 5 V
5
Figure 3. Input Bias Current vs. Common-Mode Voltage
Figure 6. Output Voltage to Supply Rail vs. Output Current at 5 V
10k
1k
100
10
OUTPUT VOLTAGE – mV
1
0.1
0.0001 0.01
Figure 7. Output Voltage to Supply Rail vs. Output Current at 2.7 V
VS = 2.7V T
= 258C
A
SOURCE SINK
0.001
0.1
LOAD CURRENT – mA
110
100
1,000
VCM = 2.5V VS = 5V
750
500
250
INPUT BIAS CURRENT – pA
0
275 250
225
0 25 50 75 100
TEMPERATURE – 8C
125
150
Figure 8. Bias Current vs. Temperature
–5–REV. 0
Figure 9. Supply Current vs. Temperature
Page 6
AD8571/AD8572/AD8574
g
g
5ms
1V
VS = +5V C
L
= 300pF
R
L
= 2kV
AV = 1
800
TA = 258C
700
600
500
400
300
200
100
SUPPLY CURRENT PER AMPLIFIER – mA
0
0
16
2345
SUPPLY VOLTAGE – V
Figure 10. Supply Current vs. Supply Voltage
60 50 40
AV = 2100
30 20
AV = 210
10
0
AV = +1
210
CLOSED-LOOP GAIN – dB
220 230 240
100 1k 10M10k 100k 1M
FREQUENCY – Hz
VS = 2.7V CL = 0pF R
= 2kV
L
Figure 13. Closed Loop Gain vs. Frequency at 2.7 V
60
VS = 2.7V
50
CL = 0pF RL =
40 30 20 10
0
210
OPEN-LOOP GAIN – dB
220 230 240
10k 100k 100M1M 10M
FREQUENCY – Hz
Figure 11. Open-Loop Gain and Phase Shift vs. Frequency at 2.7 V
60 50 40
AV = 2100
30 20
AV = 210
10
0
AV = +1
210
CLOSED-LOOP GAIN – dB
220 230 240
100 1k 10M10k 100k 1M
FREQUENCY – Hz
VS = 5V CL = 0pF R
= 2kV
L
Figure 14. Closed Loop Gain vs. Frequency at 5 V
60
VS = 5V
50
CL = 0pF
0
rees
45 90 135 180 225
PHASE SHIFT – De
270
210
OPEN-LOOP GAIN – dB
220 230 240
RL =
40 30 20 10
0
10k 100k 100M1M 10M
FREQUENCY – Hz
Figure 12. Open-Loop Gain and Phase Shift vs. Frequency at 5 V
300
VS = 2.7V
270 240 210 180 150 120
90
OUTPUT IMPEDANCE – V
60 30
0
100 1k 10M10k 100k 1M
AV = 100
FREQUENCY – Hz
Figure 15. Output Impedance vs. Frequency at 2.7 V
AV = 1
AV = 10
0
rees
45 90 135 180 225
PHASE SHIFT – De
270
300
VS = 5V
270 240 210 180 150 120
90
OUTPUT IMPEDANCE – V
60 30
0
100 1k 10M10k 100k 1M
AV = 100
FREQUENCY – Hz
Figure 16. Output Impedance vs. Frequency at 5 V
AV = 10
AV = 1
VS = 2.7V CL = 300pF R
= 2kV
L
AV = 1
2ms
Figure 17. Large Signal Transient Response at 2.7 V
500mV
Figure 18. Large Signal Transient Response at 5 V
–6– REV. 0
Page 7
AD8571/AD8572/AD8574
CAPACITANCE – pF
SMALL SIGNAL OVERSHOOT – %
10 100 10k1k
50 45
0
40 35 30 25 20 15 10
5
+OS
2OS
VS = 61.35V R
L
= 2kV
T
A
= 258C
VS = 62.5V VIN = 200mV p-p (RET TO GND)
C
L
= 0pF
R
L
= 10kV
A
V
= 2100
20ms
1V
V
IN
0V
0V
V
OUT
BOTTOM SCALE: 1V/DIV TOP SCALE: 200mV/DIV
FREQUENCY – Hz
CMRR – dB
140
80
0
100 1k 10M
10k 100k 1M
60
120
20
40
100
VS = 5V
VS = 61.35V CL = 50pF RL = AV = 1
5ms
50mV
Figure 19. Small Signal Transient Response at 2.7 V
45
VS = 62.5V
40
R
= 2kV
L
= 258C
T
35
A
30 25
20 15 10
SMALL SIGNAL OVERSHOOT – %
5
0
10 100 10k1k
+OS
CAPACITANCE – pF
2OS
Figure 22. Small Signal Overshoot vs. Load Capacitance at 5 V
VS = 62.5V CL = 50pF RL = AV = 1
5ms
50mV
Figure 20. Small Signal Transient Response at 5 V
0V
V
IN
V
OUT
0V
20ms
BOTTOM SCALE: 1V/DIV TOP SCALE: 200mV/DIV
VS = 62.5V V
= 2200mV p-p
IN
(RET TO GND)
= 0pF
C
L
R
= 10kV
L
= 2100
A
V
1V
Figure 23. Positive Overvoltage Recovery
Figure 21. Small Signal Overshoot vs. Load Capacitance at 2.7 V
Figure 24. Negative Overvoltage Recovery
VS = 62.5V R
= 2kV
L
= 2100
A
V
VIN = 60mV p-p
200ms
Figure 25. No Phase Reversal
140
VS = 2.7V
120
100
80
60
CMRR – dB
40
1V
20
0 100 1k 10M
10k 100k 1M
FREQUENCY – Hz
Figure 26. CMRR vs. Frequency at 2.7 V
–7–REV. 0
Figure 27. CMRR vs. Frequency at 5 V
Page 8
AD8571/AD8572/AD8574
FREQUENCY – Hz
OUTPUT SWING – V p-p
3.0
2.5
0
100 1k 1M10k 100k
2.0
1.5
0.5
1.0
VS = 61.35V R
L
= 2kV AV = 1 THD+N < 1% T
A
= 258C
1s
50mV
VS = 62.5V AV = 120,000
VS = 5V R
S
= 0V
0.5 FREQUENCY – kHz
1.0 1.5 2.0 2.50
52
78
104
130
156
182
26
e
n
– nV/ Hz
140
VS = 61.35V
120
100
80
60
PSRR – dB
2PSRR
40
20
0
100 1k 10M
+PSRR
10k 100k 1M
FREQUENCY – Hz
Figure 28. PSRR vs. Frequency at
±
1.35 V
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
OUTPUT SWING – V p-p
1.0
0.5 0
100 1k 1M
FREQUENCY – Hz
VS = 62.5V R
L
AV = 1 THD+N < 1% T
A
10k 100k
= 2kV
= 258C
Figure 31. Maximum Output Swing vs. Frequency at 5 V
140
VS = 62.5V
120
100
80
60
PSRR – dB
2PSRR
40
20
0
100 1k 10M
+PSRR
10k 100k 1M
FREQUENCY – Hz
Figure 29. PSRR vs. Frequency at
±
2.5 V
0V
1s
Figure 32. 0.1 Hz to 10 Hz Noise at 2.7 V
VS = 61.35V AV = 120,000
50mV
Figure 30. Maximum Output Swing vs. Frequency at 2.7 V
Figure 33. 0.1 Hz to 10 Hz Noise at 5 V
364 312 260
208
– nV/ Hz
n
e
156 104
52
0.5
1.0 1.5 2.0 2.50
FREQUENCY – kHz
Figure 34. Voltage Noise Density at
2.7 V from 0 Hz to 2.5 kHz
VS = 2.7V R
= 0V
S
112
96 80
64
– nV/ Hz
n
e
48 32
16
5
10 15 20 250
FREQUENCY – kHz
VS = 2.7V R
= 0V
S
Figure 35. Voltage Noise Density at
2.7 V from 0 Hz to 25 kHz
–8– REV. 0
Figure 36. Voltage Noise Density at 5 V from 0 Hz to 2.5 kHz
Page 9
AD8571/AD8572/AD8574
TEMPERATURE – 8C
POWER SUPPLY REJECTION – dB
150
145
125
275 250
125
225
0
25 50 75 100
140
135
130
150
VS = 2.7V TO 5.5V
100
TEMPERATURE – 8C
OUTPUT VOLTAGE SWING – mV
250
200
0
275 250
125
225
0
25 50 75 100
150
150
VS = 5V
25
50
75
125
175
225
RL = 1kV
RL = 10kV
RL = 100kV
112
96 80
64
– nV/ Hz
n
e
48 32
16
5101520250
FREQUENCY – kHz
VS = 5V R
= 0V
S
Figure 37. Voltage Noise Density at 5 V from 0 Hz to 25 kHz
50
VS = 2.7V
40 30
20
0
210 220 230
SHORT-CIRCUIT CURRENT – mA
240 250
275 250
225
0
25 50 75 10010150
TEMPERATURE – 8C
I
SC2
I
SC+
125
Figure 40. Output Short-Circuit Current vs. Temperature
210 180 150
120
– nV/ Hz
n
90
e
60
30
5100
FREQUENCY – Hz
VS = 5V R
= 0V
S
Figure 38. Voltage Noise Density at 5 V from 0 Hz to 10 Hz
100
VS = 5V
80 60
40
0
220 240 260
SHORT-CIRCUIT CURRENT – mA
280
2100
275 250
225
0
25 50 75 10020150
TEMPERATURE – 8C
I
SC2
I
SC+
125
Figure 41. Output Short-Circuit Current vs. Temperature
Figure 39. Power-Supply Rejection vs. Temperature
Figure 42. Output Voltage to Supply Rail vs. Temperature
250
VS = 5V
225 200
175 150 125 100
75 50
OUTPUT VOLTAGE SWING – mV
25
0 275 250
Figure 43. Output Voltage to Supply Rail vs. Temperature
RL = 10kV
225
0
TEMPERATURE – 8C
RL = 1kV
RL = 100kV
25 50 75 100
125
150
–9–REV. 0
Page 10
AD8571/AD8572/AD8574
FUNCTIONAL DESCRIPTION
The AD857x family are CMOS amplifiers that achieve their high degree of precision through random frequency autozero stabilization. The autocorrection topology allows the AD857x to maintain its low offset voltage over a wide temperature range, and the randomized autozero clock eliminates any intermodulation distortion (IMD) errors at the amplifier’s output.
The AD857x can be run from a single supply voltage as low as
2.7 V. The extremely low offset voltage of 1 µV and no IMD
products allows the amplifier to be easily configured for high gains without risk of excessive output voltage errors. This makes the AD857x an ideal amplifier for applications requiring both dc precision and low distortion for ac signals. The extremely small
temperature drift of 5 nV/°C ensures a minimum of offset voltage error over its entire temperature range of –40°C to +125°C. These
combined features make the AD857x an excellent choice for a variety of sensitive measurement and automotive applications.
Amplifier Architecture
Each AD857x op amp consists of two amplifiers, a main amplifier and a secondary amplifier, used to correct the offset voltage of the main amplifier. Both consist of a rail-to-rail input stage, allowing the input common-mode voltage range to reach both supply rails. The input stage consists of an NMOS differential pair operating concurrently with a parallel PMOS differential pair. The outputs from the differential input stages are combined in another gain stage whose output is used to drive a rail-to-rail output stage.
The wide voltage swing of the amplifier is achieved by using two output transistors in a common-source configuration. The output voltage range is limited by the drain-to-source resistance of these transistors. As the amplifier is required to source or sink more output current, the voltage drop across these transistors increases due to their rds. Simply put, the output voltage will not swing as close to the rail under heavy output current conditions as it will with light output current. This is a characteristic of all rail-to-rail output amplifiers. Figures 6 and 7 show how close the output voltage can get to the rails with a given output current. The out­put of the AD857x is short circuit protected to approximately 50 mA of current.
The AD857x amplifiers have exceptional gain, yielding greater
than 120 dB of open-loop gain with a load of 2 k. Because the
output transistors are configured in a common-source configu­ration, the gain of the output stage, and thus the open-loop gain of the amplifier, is dependent on the load resistance. Open-loop gain will decrease with smaller load resistances. This is another characteristic of rail-to-rail output amplifiers.
Basic Autozero Amplifier Theory
Autocorrection amplifiers are not a new technology. Various IC implementations have been available for over 15 years and some improvements have been made over time. The AD857x design offers a number of significant performance improvements over older versions while attaining a very substantial reduction in device cost. This section offers a simplified explanation of how the AD857x is able to offer extremely low offset voltages and high open-loop gains.
As noted in the previous section on amplifier architecture, each AD857x op amp contains two internal amplifiers. One is used as the primary amplifier, the other as an autocorrection, or nulling, amplifier. Each amplifier has an associated input offset voltage that can be modeled as a dc voltage source in series with the noninverting input. In Figures 44 and 45 these are labeled as
, where x denotes the amplifier associated with the offset; A
V
OSX
for the nulling amplifier, B for the primary amplifier. The open­loop gain for the +IN and –IN inputs of each amplifier is given
. Both amplifiers also have a third voltage input with an
as A
X
associated open-loop gain of B
.
X
There are two modes of operation determined by the action of two sets of switches in the amplifier: An autozero phase and an amplification phase.
Autozero Phase
In this phase, all φA switches are closed and all φB switches are
opened. Here, the nulling amplifier is taken out of the gain loop by shorting its two inputs together. Of course, there is a degree of offset voltage, shown as V
, inherent in the nulling amplifier,
OSA
which maintains a potential difference between the +IN and –IN
inputs. The nulling amplifier feedback loop is closed through φA
and V
appears at the output of the nulling amp and on CM1,
OSA
2
an internal capacitor in the AD857x. Mathematically, we can express this in the time domain as:
Vt AV tBVt
=
[]
OA A OSA A OA
[]
(1)
[]
which can be expressed as,
Vt
[]
OA
AV t
=
A OSA
+1
B
[]
(2)
A
This shows us that the offset voltage of the nulling amplifier times a gain factor appears at the output of the nulling amplifier and thus on the C
V
IN+
V
IN2
capacitor.
M1
FB
FA
A
V
OA
V
OSA
+
A
FB
A
2B
A
FA
V
NA
V
B
OUT
B
B
C
M2
V
NB
C
M1
Figure 44. Autozero Phase of the AD857x
Amplification Phase
When the φB switches close and the φA switches open for the
amplification phase, this offset voltage remains on C
M1
and essentially corrects any error from the nulling amplifier. The voltage across C
as the potential difference between the two inputs to the
V
IN
primary amplifier, or V
is designated as VNA. Let us also designate
M1
= (V
IN
IN+
– V
). Now the output of the
IN–
nulling amplifier can be expressed as:
Vt AVtV t BV t
=
[]
OA A IN OSA A NA
[]−[]
()
(3)
[]
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AD8571/AD8572/AD8574
V
IN+
V
IN2
FB
FA
V
OSA
V
+
OA
A
A
2B
A
FB
A
FA
V
NA
V
B
OUT
B
B
C
M2
V
NB
C
M1
Figure 45. Output Phase of the Amplifier
Because φA is now open and there is no place for C
charge, the voltage V voltage at the output of the nulling amp V
at the present time t is equal to the
NA
at the time when
OA
to dis-
M1
φA was closed. If we call the period of the autocorrection
switching frequency T phases every 0.5␣ ⫻␣ T
, then the amplifier switches between
S
. Therefore, in the amplification phase:
S
VtV t T
[]
NA NA S
=−
 
1
(4)
2
And substituting Equation 4 and Equation 2 into Equation 3 yields:
1
2
(5)
Vt AVtAV t
=
[]
OA A IN A OSA
+
[]
ABV t T
A A OSA S
[]
1
 
+
B
A
For the sake of simplification, let us assume that the autocorrection frequency is much faster than any potential change in V
. This is a good assumption since changes in offset voltage are
V
OSB
OSA
or
a function of temperature variation or long-term wear time, both of which are much slower than the auto-zero clock frequency of the AD857x. This effectively makes V
time invariant and we can
OS
rearrange Equation 5 and rewrite it as:
Vt AVt
=
[]
OA A IN
+
1
()
A A OSA A A OSA
+
[]
B
+
1
A
(6)
ABV ABV
or,
Vt AVt
[]
OA A IN
=
[]
 
+
V
OSA
(7)
+
1
B
A
We can already get a feel for the autozeroing in action. Note the
term is reduced by a 1 + BA factor. This shows how the
V
OS
nulling amplifier has greatly reduced its own offset voltage error even before correcting the primary amplifier. Now the primary amplifier output voltage is the voltage at the output of the AD857x amplifier. It is equal to:
VtAVtV BV
=
[]
OUT B IN OSB B NB
+
[]
()
+
(8)
In the amplification phase, VOA = VNB, so this can be rewritten as:
VtAVtAV BAVt
=
[]
OUT B IN B OSB B A IN
++
[]
 
+
[]
1
V
OSA
+
(9)
B
A
Combining terms,
ABV
VtVtAAB
[]=[]
OUT IN B A B
+
()
+
A B OSA
+
1
B
A
+
AV
B OSB
(10)
The AD857x architecture is optimized in such a way that
= AB and BA = BB and BA >> 1. Also, the gain product to
A
A
is much greater than AB. These allow Equation 10 to be
A
ABB
simplified to:
VtVtABAV V
[]≈[]
OUT IN A A A OSA OSB
++
()
(11)
Most obvious is the gain product of both the primary and nulling amplifiers. This A high open-loop gain. To understand how V
term is what gives the AD857x its extremely
ABA
OSA
and V
relate to
OSB
the overall effective input offset voltage of the complete amplifier, we should set up the generic amplifier equation of:
VkVV
Where k is the open-loop gain of an amplifier and V
+
OUT IN OS EFF
()
(12)
,
OS, EFF
is its effective offset voltage. Putting Equation 12 into the form of Equation 11 gives us:
VtVtABV AB
[]≈[]
OUT IN A A OS EFF A A
+
,
(13)
And from here, it is easy to see that:
VV
+
V
OS EFF
,
OSA OSB
B
(14)
A
Thus, the offset voltages of both the primary and nulling ampli­fiers are reduced by the gain factor B
. This takes a typical input
A
offset voltage from several millivolts down to an effective input offset voltage of submicrovolts. This autocorrection scheme is what makes the AD857x family of amplifiers among the most precise amplifiers in the world.
High Gain, CMRR, PSRR
Common-mode and power supply rejection are indications of the amount of offset voltage an amplifier has as a result of a change in its input common-mode or power supply voltages. As shown in the previous section, the autocorrection architecture of the AD857x allows it to quite effectively minimize offset voltages. The technique also corrects for offset errors caused by common-mode voltage swings and power supply variations. This results in superb CMRR and PSRR figures in excess of 130 dB. Because the autocorrection occurs continuously, these figures can be maintained across the
device’s entire temperature range, from –40°C to +125°C.
Maximizing Performance Through Proper Layout
To achieve the maximum performance of the extremely high input impedance and low offset voltage of the AD857x, care should be taken in the circuit board layout. The PC board sur­face must remain clean and free of moisture to avoid leakage currents between adjacent traces. Surface coating of the circuit board will reduce surface moisture and provide a humidity barrier, reducing parasitic resistance on the board. The use of guard rings around the amplifier inputs will further reduce leak­age currents. Figure 46 shows how the guard ring should be configured and Figure 47 shows the top view of how a surface mount layout can be arranged. The guard ring does not need to be a specific width, but it should form a continuous loop around both inputs. By setting the guard ring voltage equal to the volt­age at the noninverting input, parasitic capacitance is minimized as well. For further reduction of leakage currents, components can be mounted to the PC board using Teflon standoff insulators.
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Page 12
AD8571/AD8572/AD8574
V
V
IN
AD8572
V
IN
OUT
V
IN
AD8572
V
OUT
AD8572
Figure 46. Guard Ring Layout and Connections to Reduce PC Board Leakage Currents
V+
R
R
2
V
REF
V
IN1
GUARD RING
R
V
REF
R
1
2
AD8572
V2
Figure 47. Top View of AD8572 SOIC Layout with Guard Rings
Other potential sources of offset error are thermoelectric voltages on the circuit board. This voltage, also called Seebeck voltage, occurs at the junction of two dissimilar metals and is proportional to the temperature of the junction. The most common metallic junctions on a circuit board are solder-to-board trace and solder­to-component lead. Figure 48 shows a cross-section diagram view of the thermal voltage error sources. If the temperature of the PC board at one end of the component (T temperature at the other end (T
A2
) is different from the
A1
), the Seebeck voltages will not
be equal, resulting in a thermal voltage error.
This thermocouple error can be reduced by using dummy com­ponents to match the thermoelectric error source. Placing the dummy component as close as possible to its partner will ensure both Seebeck voltages are equal, thus canceling the thermo­couple error. Maintaining a constant ambient temperature on the circuit board will further reduce this error. The use of a ground plane will help distribute heat throughout the board and will also reduce EMI noise pickup.
COMPONENT
LEAD
V
SC1
+
2
V
TS1
+
2
SURFACE MOUNT
COMPONENT
PC BOARD
+
1
V
2
SC2
+
V
GUARD RING
SOLDER
V
TS2
2
V
OUT
IN2
R
F
R
1
V
V
IN
NOTE: RS SHOULD BE PLACED IN CLOSE PROXIMITY AND ALIGNMENT TO R
RS = R
1
TO BALANCE SEEBECK VOLTAGES
1
AD857x
AV = 1 + (RF/R1)
OUT
Figure 49. Using Dummy Components to Cancel Thermoelectric Voltage Errors
1/f Noise Characteristics
Another advantage of autozero amplifiers is their ability to cancel flicker noise. Flicker noise, also known as 1/f noise, is noise inher­ent in the physics of semiconductor devices and increases 3 dB for every octave decrease in frequency. The 1/f corner frequency of an amplifier is the frequency at which the flicker noise is equal to the broadband noise of the amplifier. At lower frequencies, flicker noise dominates, causing higher degrees of error for sub­Hertz frequencies or dc precision applications.
Because the AD857x amplifiers are self-correcting op amps, they do not have increasing flicker noise at lower frequencies. In essence, low frequency noise is treated as a slowly varying offset error and is greatly reduced as a result of autocorrection. The correction becomes more effective as the noise frequency approaches dc, offsetting the tendency of the noise to increase exponentially as frequency decreases. This allows the AD857x to have lower noise near dc than standard low-noise amplifiers that are susceptible to 1/f noise.
Random Autozero Correction Eliminates Intermodulation Distortion
The AD857x can be used as a conventional op amp for gains up to 1 MHz. The autozero correction frequency of the device continuously varies, based on a pseudo-random generator with a uniform distribution from 2 kHz to 4 kHz. The randomization of the autocorrection clock creates a continuous randomization of intermodulation distortion (IMD) products, which show up as simple broadband noise at the output of the amplifier. This noise naturally combines with the amplifier’s voltage noise in a root-squared-sum fashion, resulting in an output free of IMD. Figure 50a shows the spectral output of an AD8572 with the amplifier configured for unity gain and the input grounded. Figure 50b shows the spectral output with the amplifier configured for a gain of 60 dB.
COPPER
TRACE
T
A1
T
A2
IF TA1 = TA2, THEN
+ V
TS1
SC1
= V
TS2
V
+ V
SC2
Figure 48. Mismatch in Seebeck Voltages Causes a Thermoelectric Voltage Error
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AD8571/AD8572/AD8574
0
220
240
260
280
2100
OUTPUT SIGNAL
2120
2140
2160
0
23456789
FREQUENCY – kHz
VS = 5V
= 0dB
A
V
101
Figure 50a. Spectral Analysis of AD857x Output in Unity Gain Configuration
0
220
240
260
OUTPUT SIGNAL
280
2100
2120
0
23456789
FREQUENCY – kHz
VS = 5V AV = 60dB
101
Figure 50b. Spectral Analysis of AD857x Output with 60 dB Gain
Figure 51 shows the spectral output of an AD8572 configured in a high gain (60 dB) with a 1 mV input signal applied. Note the absence of any IMD products in the spectrum. The signal­to-noise (SNR) ratio of the output signal is better than 60 dB, or 0.1%.
0
220
240
260
OUTPUT SIGNAL
280
2100
2120
0
23456789
FREQUENCY – kHz
VS = 5V AV = 60dB
101
Figure 51. Spectral Analysis of AD857x in High Gain with an Input Signal
Broadband and External Resistor Noise Considerations
The total broadband noise output from any amplifier is primarily a function of three types of noise: Input voltage noise from the amplifier, input current noise from the amplifier and Johnson noise from the external resistors used around the amplifier. Input voltage noise, or e
, is strictly a function of the amplifier used.
n
The Johnson noise from a resistor is a function of the resistance and the temperature. Input current noise, or i
, creates an equiva-
n
lent voltage noise proportional to the resistors used around the amplifier. These noise sources are not correlated with each other and their combined noise sums in a root-squared-sum fashion. The full equation is given as:
1
2
2
e e kTr i r
n TOTAL n s n s,
=+ +
4
2
()
(15)
Where, en= The input voltage noise of the amplifier,
= The input current noise of the amplifier,
i
n
= Source resistance connected to the noninverting
r
s
terminal,
k = Boltzmann’s constant (1.38 ⫻ 10
-23
J/K)
T = Ambient temperature in Kelvin (K = 273.15 + °C)
The input voltage noise density, e and the input noise, i
, is 2 fA/Hz. The e
n
of the AD857x is 51 nV/Hz,
n,
n, TOTAL
will be domi-
nated by input voltage noise provided the source resistance is less
than 172 k. With source resistance greater than 172 k, the
overall noise of the system will be dominated by the Johnson noise of the resistor itself.
Because the input current noise of the AD857x is very small, i does not become a dominant term unless r
is greater than 4 GΩ,
s
n
which is an impractical value of source resistance.
The total noise, e
, is expressed in volts-per-square-root
n, TOTAL
Hertz, and the equivalent rms noise over a certain bandwidth can be found as:
ee BW
n n TOTAL
,
(16)
Where BW is the bandwidth of interest in Hertz.
For a complete treatise on circuit noise analysis, please refer to the 1995 Linear Design Seminar book available from Analog Devices.
Output Overdrive Recovery
The AD857x amplifiers have an excellent overdrive recovery of
only 200 µs from either supply rail. This characteristic is particu-
larly difficult for autocorrection amplifiers, as the nulling ampli­fier requires a substantial amount of time to error correct the main amplifier back to a valid output. Figure 23 and Figure 24 show the positive and negative overdrive recovery time for the AD857x.
The output overdrive recovery for an autocorrection amplifier is defined as the time it takes for the output to correct to its final voltage from an overload state. It is measured by placing the amplifier in a high gain configuration with an input signal that forces the output voltage to the supply rail. The input voltage is then stepped down to the linear region of the amplifier, usually to half-way between the supplies. The time from the input signal
step-down to the output settling to within 100 µV of its final
value is the overdrive recovery time. Most competitors’ auto­correction amplifiers require a number of autozero clock cycles to recover from output overdrive and some can take several milliseconds for the output to settle properly.
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AD8571/AD8572/AD8574
Input Overvoltage Protection
Although the AD857x is a rail-to-rail input amplifier, care should be taken to ensure that the potential difference between the inputs does not exceed 5 V. Under normal operating conditions, the amplifier will correct its output to ensure the two inputs are at the same voltage. However, if the device is configured as a com­parator, or is under some unusual operating condition, the input voltages may be forced to different potentials. This could cause excessive current to flow through internal diodes in the AD857x used to protect the input stage against overvoltage.
If either input exceeds either supply rail by more than 0.3 V, large amounts of current will begin to flow through the ESD protection diodes in the amplifier. These diodes are connected between the inputs and each supply rail to protect the input transistors against an electrostatic discharge event and are normally reverse-biased. However, if the input voltage exceeds the supply voltage, these ESD diodes will become forward-biased. Without current-limiting, excessive amounts of current could flow through these diodes causing permanent damage to the device. If inputs are subject to overvoltage, appropriate series resistors should be inserted to limit the diode current to less than 2 mA maximum.
Output Phase Reversal
Output phase reversal occurs in some amplifiers when the input common-mode voltage range is exceeded. As common-mode voltage is moved outside of the common-mode range, the outputs of these amplifiers will suddenly jump in the opposite direction to the supply rail. This is the result of the differential input pair shut­ting down, causing a radical shifting of internal voltages which results in the erratic output behavior.
The AD857x amplifier has been carefully designed to prevent any output phase reversal, provided both inputs are maintained within the supply voltages. If one or both inputs could exceed either supply voltage, a resistor should be placed in series with the input to limit the current to less than 2 mA. This will ensure the output will not reverse its phase.
Capacitive Load Drive
The AD857x has excellent capacitive load-driving capabilities and can safely drive up to 10 nF from a single 5 V supply. Although the device is stable, capacitive loading will limit the bandwidth of the amplifier. Capacitive loads will also increase the amount of overshoot and ringing at the output. An R-C snubber network, Figure 52, can be used to compensate the amplifier against capacitive load ringing and overshoot.
Although the snubber will not recover the loss of amplifier band­width from the load capacitance, it will allow the amplifier to drive larger values of capacitance while maintaining a minimum of over­shoot and ringing. Figure 53 shows the output of an AD857x driving a 1 nF capacitor with and without a snubber network.
10ms
WITH
SNUBBER
WITHOUT
SNUBBER
VS = 5V C
LOAD
= 4.7nF
100mV
Figure 53. Overshoot and Ringing are Substantially Reduced Using a Snubber Network
The optimum value for the resistor and capacitor is a function of the load capacitance and is best determined empirically since actual
will include stray capacitances and may differ substantially
C
LOAD
from the nominal capacitive load. Table I shows some snubber network values that can be used as starting points.
Table I. Snubber Network Values for Driving Capacitive Loads
C
LOAD
R
X
C
X
1 nF 200 1 nF
4.7 nF 60 0.47 µF 10 nF 20 10 µF
Power-Up Behavior
On power-up, the AD857x will settle to a valid output within 5 µs.
Figure 54a shows an oscilloscope photo of the output of the ampli­fier along with the power supply voltage, and Figure 54b shows the test circuit. With the amplifier configured for unity gain, the device
takes approximately 5 µs to settle to its final output voltage. This
turn-on response time is much faster than most other autocorrection amplifiers, which can take hundreds of microseconds or longer for their output to settle.
5V
V
200mV p-p
AD857x
IN
R
X
60V
C
X
0.47mF
C
L
4.7nF
V
OUT
Figure 52. Snubber Network Configuration for Driving Capacitive Loads
V
OUT
0V
V+
0V
5ms
BOTTOM TRACE = 2V/DIV TOP TRACE = 1V/DIV
1V
Figure 54a. AD857x Output Behavior on Power-Up
–14– REV. 0
Page 15
100kV
V
OUT
R
R
R
R
AD8574-C
V2
R
R
V1
R
G
AD8574-B
AD8574-A
R
TRIM
V
OUT
= 1 +
2R R
G
(V1 2 V2)
100kV
AD857x
VSY = 0V TO 5V
V
OUT
Figure 54b. AD857x Test Circuit for Turn-On Time
APPLICATIONS A 5 V Precision Strain-Gage Circuit
The extremely low offset voltage of the AD8572 makes it an ideal amplifier for any application requiring accuracy with high gains, such as a weigh scale or strain-gage. Figure 55 shows a configuration for a single supply, precision strain-gage measurement system.
A REF192 provides a 2.5 V precision reference voltage for A2. The A2 amplifier boosts this voltage to provide a 4.0 V reference for the top of the strain-gage resistor bridge. Q1 provides the cur-
rent drive for the 350 bridge network. A1 is used to amplify the
output of the bridge with the full-scale output voltage equal to:
2
×+
RR
()
12
R
B
(17)
Where RB is the resistance of the load cell. Using the values given in Figure 55, the output voltage will linearly vary from 0 V with no strain to 4 V under full strain.
6
REF192
2
3
4
2N2222
EQUIVALENT
OR
4.0V
Q1
1kV
AD8572-B
12kV
5V
A2
R
1
17.4kV
2.5V
20kV
R
100V
2
AD8571/AD8572/AD8574
R
2
R
V2
V1
Figure 56. Using the AD857x as a Difference Amplifier
In an ideal difference amplifier, the ratio of the resistors are set exactly equal to:
Which sets the output voltage of the system to:
Due to finite component tolerance the ratio between the four resistors will not be exactly equal, and any mismatch results in a reduction of common-mode rejection from the system. Referring to Figure 56, the exact common-mode rejection ratio can be expressed as:
CMRR
In the 3 op amp instrumentation amplifier configuration shown in Figure 57, the output difference amplifier is set to unity gain with all four resistors equal in value. If the tolerance of the resis-
tors used in the circuit is given as δ, the worst-case CMRR of
the instrumentation amplifier will be:
1
R
3
R
4
R
R
4
=
R
3
A
2
, THEN V
R
1
RRR
214
==
V
IF
VAVV
=−
OUT V
RR RR RR
14 24 23
=
22
RR R R
CMRR
AD857x
R
2
=
OUT
R
1
(19)
R
3
12 (20)
()
2
++
14 2 3
1
=
MIN
2δ
V
OUT
3 (V1 2 V2)
(21)
(22)
350V
LOAD
CELL
NOTE: USE 0.1% TOLERANCE RESISTORS.
40mV
FULL-SCALE
A1
R
3
17.4kV
AD8572-A
R
100V
V
OUT
0V TO 4V
4
Figure 55. A 5 V Precision Strain-Gage Amplifier
3 V Instrumentation Amplifier
The high common-mode rejection, high open-loop gain, and operation down to 3 V of supply voltage makes the AD857x an excellent choice of op amp for discrete single supply instrumenta­tion amplifiers. The common-mode rejection ratio of the AD857x is greater than 120 dB, but the CMRR of the system is also a function of the external resistor tolerances. The gain of the differ­ence amplifier shown in Figure 56 is given as:
VV
OUT
112
=
RRRR
R
4
+
3412
+
R
2
V
(18)
R
1
Figure 57. A Discrete Instrumentation Amplifier Configuration
Thus, using 1% tolerance resistors would result in a worst-case system CMRR of 0.02, or 34 dB. Therefore either high precision resistors or an additional trimming resistor, as shown in Figure 57, should be used to achieve high common-mode rejection. The value of this trimming resistor should be equal to the value of R multi-
plied by its tolerance. For example, using 10 k resistors with 1% tolerance would require a series trimming resistor equal to 100 Ω.
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AD8571/AD8572/AD8574
A High Accuracy Thermocouple Amplifier
Figure 58 shows a K-type thermocouple amplifier configuration with cold-junction compensation. Even from a 5 V supply, the AD8571 can provide enough accuracy to achieve a resolution
of better than 0.02°C from 0°C to 500°C. D1 is used as a tempera-
ture measuring device to correct the cold-junction error from the thermocouple and should be placed as close as possible to the two terminating junctions. With the thermocouple measuring tip immersed in a zero-degree ice bath, R
should be adjusted
6
until the output is at 0 V.
Using the values shown in Figure 58, the output voltage will
track temperature at 10 mV/°C. For a wider range of tempera-
ture measurement, R
can be decreased to 62 k. This will
9
create a 5 mV/°C change at the output, allowing measurements of up to 1000°C.
12V
0.1mF
K-TYPE
THERMOCOUPLE
40.7mV/8C
REF02EZ
2
1N4148
––
++
4
D1
5.62kV
6
10.7kV
2.74kV
R
4
5V
R
5
200V
R
3
53.6V
40.2kV
R
8
453V
R
6
R
1
R
2
R
9
124kV
5V
10mF
+
0.1mF
2
8
3
1
AD8571
4
0V TO 5V (08C TO 5008C)
Figure 58. A Precision K-Type Thermocouple Amplifier with Cold-Junction Compensation
Precision Current Meter
Because of its low input bias current and superb offset voltage at single supply voltages, the AD857x is an excellent amplifier for precision current monitoring. Its rail-to-rail input allows the amplifier to be used as either a high-side or low-side current monitor. Using both amplifiers in the AD8572 provides a simple method to monitor both current supply and return paths for load or fault detection.
Figure 59 shows a high-side current monitor configuration. Here, the input common-mode voltage of the amplifier will be at or near the positive supply voltage. The amplifier’s rail-to-rail input provides a precise measurement, even with the input common-mode voltage at the supply voltage. The CMOS input structure does not draw any input bias current, ensuring a minimum of measurement error.
The 0.1 resistor creates a voltage drop to the noninverting
input of the AD857x. The amplifier’s output is corrected until this voltage appears at the inverting input. This creates a current through R
, which in turn flows through R2. The Monitor Output
1
is given by:
Figure 60 shows the low-side monitor equivalent. In this circuit, the input common-mode voltage to the AD8572 will be at or near
ground. Again, a 0.1 resistor provides a voltage drop proportional
to the return current. The output voltage is given as:
R
VV
=+− × ×
OUT SENSE L
2
RI
R
1
 
(24)
For the component values shown in Figure 60, the output transfer function decreases from V at –2.5 V/A.
R
3V
MONITOR
OUTPUT
100V
M1
Si9433
SENSE
0.1V
R
1
S
G
D
R
2
2.49kV
3
AD8572
2
1/2
I
L
3V
8
4
V+
0.1mF
1
Figure 59. A High-Side Load Current Monitor
V+
R
2
100V
2.49kV
Q1
R
1
R
SENSE
0.1V
V+
1/2 AD8572
RETURN TO GROUND
V
OUT
Figure 60. A Low-Side Load Current Monitor
Precision Voltage Comparator
The AD857x can be operated open-loop and used as a precision
comparator. The AD857x has less than 50 µV of offset voltage
when run in this configuration. The slight increase of offset voltage stems from the fact that the autocorrection architecture operates with lowest offset in a closed-loop configuration, that is, one with negative feedback. With 50 mV of overdrive, the
device has a propagation delay of 15 µs on the rising edge and 8 µs on the falling edge.
Care should be taken to ensure the maximum differential volt­age of the device is not exceeded. For more information, please refer to the section on Input Overvoltage Protection.
Monitor Output R
R
2
 
SENSE
R
1
×
I
L
(23)
Using the components shown in Figure 59, the Monitor Output transfer function is 2.5␣ V/A.
–16– REV. 0
Page 17
AD8571/AD8572/AD8574
SPICE Model
The SPICE macro-model for the AD857x amplifier is given in Listing 1. This model simulates the typical specifications for the AD857x, and it can be downloaded from the Analog Devices website at http://www.analog.com. The schematic of the macro-model is shown in Figure 61.
Transistors M1 through M4 simulate the rail-to-rail input differ­ential pairs in the AD857x amplifier. The EOS voltage source in
series with the noninverting input establishes not only the 1 µV
offset voltage, but is also used to establish common-mode and power supply rejection ratios and input voltage noise. The differ­ential voltages from nodes 14 to 16 and nodes 17 to 18 are reflected to E1, which is used to simulate a secondary pole-zero combination in the open-loop gain of the amplifier.
The voltage at node 32 is then reflected to G1, which adds an additional gain stage and, in conjunction with CF, establishes
the slew rate of the model at 0.5 V/µs. M5 and M6 are in a
common-source configuration, similar to the output stage of the AD857x amplifier. EG1 and EG2 fix the quiescent current
in these two transistors at 100 µA, and also help accurately
simulate the V
OUT
vs. I
characteristic of the amplifier.
OUT
99
D1
9
V1
8
7
1
+
2
EOS
R
C1
14
R
C5
EREF
R
C7
17
R
C3
D2
V1
31
E1
11
M3 M4
+
2
+
2
99
C2
10
13
50
C1
50
C2
R
98
0
I1
R
C8
18
R
C4
M2M1
12
2
R
I2
C2
16 R
C6
2
32
R
3
Figure 61. Schematic of the AD857x SPICE Macro-Model
The network around ECM1 creates the common-mode voltage error, with CCM1 setting the corner frequency for the CMRR roll-off. The power supply rejection error is created by the network around EPS1, with CPS3 establishing the corner frequency for the PSRR roll-off. The two current loops around nodes 80 and
81 are used to create a 51 nV/Hz noise figure across RN2. All
three of these error sources are reflected to the input of the op amp model through EOS. Finally, GSY is used to accurately model the supply current versus supply voltage increase in the AD857x.
This macro-model has been designed to accurately simulate a number of specifications exhibited by the AD857x amplifier, and is one of the most true-to-life macro-models available for
any op amp. It is optimized for operation at 27°C. Although the
model will function at different temperatures, it may lose accuracy with respect to the actual behavior of the AD857x.
CCM1
R
CM1
GSY
G1
99
50
98
VN1
30
ECM1
CPS1
CPS2
R
21
+
2
98
R
N1
99
70
R
PS1
0
R
PS2
71
50
98
2
EVP
+
D3
D4
1
+
EVN
2
98
22
R
CM2
8180
+
HN
72
97
51
R
N2
2
98
CPS3
R
PS3
2
EPS1
+
98
+
EG1
2
46
CF
47
+
EG2
2
73
R
PS4
99
M5
45
M6
50
–17–REV. 0
Page 18
AD8571/AD8572/AD8574
SPICE macro-model for the AD857x
* AD8572 SPICE Macro-model * Typical Values * 7/99, Ver. 1.0 * TAM / ADSC * * Copyright 1999 by Analog Devices * * Refer to “README.DOC” file for License * Statement. Use of this model indicates * your acceptance of the terms and * provisions in the License Statement. * * Node Assignments * noninverting input * | inverting input * | | positive supply * | | | negative supply * | | | | output * ||||| * ||||| .SUBCKT AD8572 1 2 99 50 45 * * INPUT STAGE * M1 4 7 8 8 PIX L=1E-6 W=355.3E-6 M2 6 2 8 8 PIX L=1E-6 W=355.3E-6 M3 11 7 10 10 NIX L=1E-6 W=355.3E-6 M4 12 2 10 10 NIX L=1E-6 W=355.3E-6 RC1 4 14 9E+3 RC2 6 16 9E+3 RC3 17 11 9E+3 RC4 18 12 9E+3 RC5 14 50 1E+3 RC6 16 50 1E+3 RC7 99 17 1E+3 RC8 99 18 1E+3 C1 14 16 30E-12 C2 17 18 30E-12 I1 99 8 100E-6 I2 10 50 100E-6 V1 99 9 0.3 V2 13 50 0.3 D1 8 9 DX D2 13 10 DX EOS 7 1 POLY(3) (22,98) (73,98) (81,98) + 1E-6 1 1 1 IOS 1 2 2.5E-12 * * CMRR 120dB, ZERO AT 20Hz * ECM1 21 98 POLY(2) (1,98) (2,98) 0 .5 .5 RCM1 21 22 50E+6 CCM1 21 22 159E-12 RCM2 22 98 50 * * PSRR=120dB, ZERO AT 1Hz * RPS1 70 0 1E+6 RPS2 71 0 1E+6 CPS1 99 70 1E-5 CPS2 50 71 1E-5 EPSY 98 72 POLY(2) (70,0) (0,71) 0 1 1 RPS3 72 73 15.9E+6 CPS3 72 73 10E-9 RPS4 73 98 16
* VOLTAGE NOISE REFERENCE OF 51nV/rt(Hz) * VN1 80 98 0 RN1 80 98 16.45E-3 HN 81 98 VN1 51 RN2 81 98 1 * * INTERNAL VOLTAGE REFERENCE * EREF 98 0 POLY(2) (99,0) (50,0) 0 .5 .5 GSY 99 50 (99,50) 48E-6 EVP 97 98 (99,50) 0.5 EVN 51 98 (50,99) 0.5 * * LHP ZERO AT 7MHz, POLE AT 50MHz * E1 32 98 POLY(2) (4,6) (11,12) 0 .5814 .5814 R2 32 33 3.7E+3 R3 33 98 22.74E+3 C3 32 33 1E-12 * * GAIN STAGE * G1 98 30 (33,98) 22.7E-6 R1 30 98 259.1E+6 CF 45 30 45.4E-12 D3 30 97 DX D4 51 30 DX * * OUTPUT STAGE * M5 45 46 99 99 POX L=1E-6 W=1.111E-3 M6 45 47 50 50 NOX L=1E-6 W=1.6E-3 EG1 99 46 POLY(1) (98,30) 1.1936 1 EG2 47 50 POLY(1) (30,98) 1.2324 1
* * MODELS * .MODEL POX PMOS (LEVEL=2,KP=10E-6, + VTO=-1,LAMBDA=0.001,RD=8) .MODEL NOX NMOS (LEVEL=2,KP=10E-6, + VTO=1,LAMBDA=0.001,RD=5) .MODEL PIX PMOS (LEVEL=2,KP=100E-6, + VTO=-1,LAMBDA=0.01) .MODEL NIX NMOS (LEVEL=2,KP=100E-6, + VTO=1,LAMBDA=0.01) .MODEL DX D(IS=1E-14,RS=5) .ENDS AD8572
–18– REV. 0
Page 19
OUTLINE DIMENSIONS
14
8
7
1
0.201 (5.10)
0.193 (4.90)
0.256 (6.50)
0.246 (6.25)
0.177 (4.50)
0.169 (4.30)
PIN 1
SEATING
PLANE
0.006 (0.15)
0.002 (0.05)
0.0118 (0.30)
0.0075 (0.19)
0.0256 (0.65)
BSC
0.0433 (1.10) MAX
0.0079 (0.20)
0.0035 (0.090)
0.028 (0.70)
0.020 (0.50)
88 08
Dimensions shown in inches and (mm).
AD8571/AD8572/AD8574
0.122 (3.10)
0.114 (2.90)
0.006 (0.15)
0.002 (0.05) SEATING
PLANE
0.122 (3.10)
0.114 (2.90)
85
PIN 1
0.0256 (0.65) BSC
0.120 (3.05)
0.112 (2.84)
0.018 (0.46)
0.008 (0.20)
0.122 (3.10)
0.114 (2.90)
8
8-Lead MSOP
(RM Suffix)
0.199 (5.05)
0.187 (4.75)
41
0.043 (1.09)
0.037 (0.94)
0.011 (0.28)
0.003 (0.08)
8-Lead TSSOP
(RU Suffix)
5
0.120 (3.05)
0.112 (2.84)
338 278
0.028 (0.71)
0.016 (0.41)
0.1574 (4.00)
0.1497 (3.80)
PIN 1
0.0098 (0.25)
0.0040 (0.10)
SEATING
PLANE
0.1968 (5.00)
0.1890 (4.80)
8
5 41
0.0688 (1.75)
0.0532 (1.35)
0.0500
0.0192 (0.49)
(1.27)
0.0138 (0.35)
BSC
14-Lead TSSOP
8-Lead SOIC
(R Suffix)
0.2440 (6.20)
0.2284 (5.80)
0.0098 (0.25)
0.0075 (0.19)
(RU Suffix)
0.0196 (0.50)
0.0099 (0.25)
8° 0°
0.0500 (1.27)
0.0160 (0.41)
C3734–2.5–10/99
x 45°
0.177 (4.50)
PIN 1
0.006 (0.15)
0.002 (0.05)
SEATING
PLANE
0.169 (4.30)
1
0.0256 (0.65) BSC
0.0118 (0.30)
0.0075 (0.19)
4
0.256 (6.50)
0.246 (6.25)
0.0433 (1.10) MAX
0.0079 (0.20)
0.0035 (0.090)
0.028 (0.70)
88
0.020 (0.50)
08
0.1574 (4.00)
0.1497 (3.80)
0.0098 (0.25)
0.0040 (0.10)
SEATING
PLANE
14-Lead SOIC
0.3444 (8.75)
0.3367 (8.55)
14 8
PIN 1
0.0500
0.0192 (0.49)
(1.27)
0.0138 (0.35)
BSC
(R Suffix)
0.2440 (6.20)
71
0.2284 (5.80)
0.0688 (1.75)
0.0532 (1.35)
0.0099 (0.25)
0.0075 (0.19)
0.0196 (0.50)
0.0099 (0.25)
88 08
0.0500 (1.27)
0.0160 (0.41)
x 458
PRINTED IN U.S.A.
–19–REV. 0
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