Datasheet AD8557 Datasheet (ANALOG DEVICES)

Page 1
Digitally Programmable
V
VOUT
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FEATURES

Very low offset voltage: 12 μV maximum over temperature Very low input offset voltage drift: 65 nV/°C maximum High CMRR: 96 dB minimum Digitally programmable gain and output offset voltage Gain range from 28 to 1300 Single-wire serial interface Stable with any capacitive load SOIC_N and LFCSP_VQ packages
2.7 V to 5.5 V operation

APPLICATIONS

Automotive sensors Pressure and position sensors Precision current sensing Thermocouple amplifiers Industrial weigh scales Strain gages

GENERAL DESCRIPTION

The AD8557 is a zero drift, sensor signal amplifier with digitally programmable gain and output offset. Designed to easily and accurately convert variable pressure sensor and strain bridge outputs to a well-defined output voltage range, the AD8557 accurately amplifies many other differential or single-ended sensor outputs. The AD8557 uses the Analog Devices, Inc. patented low noise auto-zero and DigiTrim® technologies to create an accurate and flexible signal processing solution in a compact footprint.
Gain is digitally programmable in a wide range from 28 to 1300
hrough a serial data interface. Gain adjustment can be fully
t simulated in circuit and then permanently programmed with reliable polyfuse technology. Output offset voltage is also digitally programmable and is ratiometric to the supply voltage.
In addition to extremely low input offset voltage and input
ffset voltage drift and very high dc and ac CMRR, the AD8557
o
Sensor Signal Amplifier
AD8557

FUNCTIONAL BLOCK DIAGRAM

DD
R6
VDD
A3
VSS
VCLAMP
A4
VSS
06013-001
VDD
VNEG
VPOS
A1
VSS
VDD
A2
VSS
P3
R4
R1
P1
R3
P2
R2
R5 R7
P4
VDD
DAC
VSS
Figure 1.
also includes a pull-up current source at the input pins and a pull-down current source at the VCLAMP pin. Output clamping set via an external reference voltage allows the AD8557 to drive lower voltage ADCs safely and accurately.
When used in conjunction with an ADC referenced to the same
pply, the system accuracy becomes immune to normal supply
su voltage variations. Output offset voltage can be adjusted with a resolution of better than 0.4% of the difference between VDD and VSS. A lockout trim after gain and offset adjustment further ensures field reliability.
The AD8557 is fully specified from −40°C to +125°C. O
perating from single-supply voltages of 2.7 V to 5.5 V, the AD8557 is offered in an 8-lead SOIC_N, and a 4 mm × 4 mm, 16-lead LFCSP_VQ.
Rev. A
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 www.analog.com Fax: 781.461.3113 ©2007–2008 Analog Devices, Inc. All rights reserved.
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TABLE OF CONTENTS

Features .............................................................................................. 1
Applications....................................................................................... 1
Functional Block Diagram .............................................................. 1
General Description......................................................................... 1
Revision History ............................................................................... 2
Specifications..................................................................................... 3
Absolute Maximum Ratings............................................................ 5
Thermal Resistance ...................................................................... 5
ESD Caution.................................................................................. 5
Pin Configurations and Function Descriptions ........................... 6

REVISION HISTORY

1/08—Rev. 0 to Rev. A
Changes to Theory of Operation Section.................................... 14
Changes to Determining Optimal Gain and Offset C
odes Section.................................................................................. 20
5/07—Revision 0: Initial Version
Typical Perf or m an c e Charac t e r istics ..............................................7
Theory of Operation ...................................................................... 14
Gain Values ................................................................................. 15
Open Wire Fault Detection....................................................... 16
Shorted Wire Fault Detection ................................................... 16
Floating VPOS, VNEG, or VCLAMP Fault Detection ......... 16
Device Programming................................................................. 16
Outline Dimensions ....................................................................... 21
Ordering Guide .......................................................................... 21
Rev. A | Page 2 of 24
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AD8557
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SPECIFICATIONS

VDD = 5.0 V, VSS = 0.0 V, VCM = 2.5 V, VOUT = 2.5 V, gain = 28, TA = −40°C to +125°C, unless otherwise specified.
Table 1.
Parameter Symbol Conditions Min Typ Max Unit
INPUT STAGE
Input Offset Voltage VOS 2 12 V Input Offset Voltage Drift TCV Input Bias Current I Input Offset Current I Input Voltage Range 0.6 3.8 V Common-Mode Rejection Ratio CMRR VCM = 0.9 V to 3.6 V, AV = 28 75 85 dB V Linearity VOUT = 0.2 V to 3.4 V 20 ppm VOUT = 0.2 V to 4.8 V 1000 ppm Differential Gain Accuracy Second stage gain = 10 to 70 1.6 % Differential Gain Accuracy Second stage gain = 100 to 250 2.5 % Differential Gain Temperature Coefficient Second stage gain = 10 to 250 15 40 ppm/°C
DAC
Accuracy Offset codes = 8 to 248 0.7 0.8 % Ratiometricity Offset codes = 8 to 248 50 ppm Output Offset Offset codes = 8 to 248 5 35 mV Temperature Coefficient 20 80 ppm FS/°C
VCLAMP
Clamp Input Bias Current ICLAMP 1.25 V to 5.0 V 200 nA Clamp Input Voltage Range 1.25 5.0 V
OUTPUT STAGE
Short-Circuit Current I I Output Voltage, Low V Output Voltage, High V
POWER SUPPLY
Supply Current I
Power Supply Rejection Ratio PSRR VDD = 2.7 V to 5.5 V 105 125 dB
DYNAMIC PERFORMANCE
Gain Bandwidth Product GBP First gain stage, TA = 25°C 2 MHz Second gain stage, TA = 25°C 8 MHz Settling Time t
NOISE PERFORMANCE
Input Referred Noise f = 1 kHz, TA = 25°C 32 nV/√Hz Low Frequency Noise en p-p f = 0.1 Hz to 10 Hz, TA = 25°C 0.5 µV p-p Total Harmonic Distortion THD
DIGITAL INTERFACE
Input Current 2 µA DIGIN Pulse Width to Load 0 tw DIGIN Pulse Width to Load 1 tw Time Between Pulses at DIGIN tw DIGIN Low TA = 25°C 0.2 × VDD V DIGIN High TA = 25°C 0.8 × VDD V DIGOUT Logic 0 TA = 25°C 0.2 × VDD V DIGOUT Logic 1 TA = 25°C 0.8 × VDD V
B
OS
SC
SC
OL
OH
SY
s
0
1
s
27 65 nV/°C
OS
10 18 25 nA 1 4 nA
= 0.9 V to 3.6 V, AV = 1300 96 112 dB
CM
Source −45 −25 mA Sink 40 55 mA RL = 10 kΩ to 5 V 30 mV RL = 10 kΩ to 0 V 4.94 V
VPOS = VNEG = 2.5 V, VDAC code = 128, VOUT = 2.5 V
To 0.1%, 4 V output step 8 µs
= 16.75 mV rms, f = 1 kHz,
V
IN
T
= 25°C
A
TA = 25°C 0.05 10 µs TA = 25°C 50 µs TA = 25°C 10 µs
1.8 mA
−100 dB
Rev. A | Page 3 of 24
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VDD = 2.7 V, VSS = 0.0 V, VCM = 1.35 V, VOUT = 1.35 V, gain = 28, TA = −40°C to +125°C, unless otherwise specified.
Table 2.
Parameter Symbol Conditions Min Typ Max Unit
INPUT STAGE
Input Offset Voltage VOS 2 12 µV Input Offset Voltage Drift TCV Input Bias Current I Input Offset Current I Input Voltage Range 0.6 1.5 V Common-Mode Rejection Ratio CMRR VCM = 0.9 V to 1.5 V, AV = 28 71 82 dB V Linearity VOUT = 0.2 V to 1.8 V 20 ppm VOUT = 0.2 V to 2.5 V 1000 ppm Differential Gain Accuracy Second stage gain = 10 to 250 1.6 % Differential Gain Temperature Coefficient Second stage gain = 10 to 250 15 40 ppm/°C
DAC
Accuracy Offset codes = 8 to 248 0.7 0.8 % Ratiometricity Offset codes = 8 to 248 50 ppm Output Offset Offset codes = 8 to 248 5 35 mV Temperature Coefficient 20 80 ppm FS/°C
VCLAMP
Input Bias Current ICLAMP 1.25 V to 2.7 V 200 nA Input Voltage Range 1.25 2.7 V
OUTPUT STAGE
Short-Circuit Current I Sink 15 25 mA Output Voltage, Low V Output Voltage, High V
POWER SUPPLY
Supply Current I
Power Supply Rejection Ratio PSRR VDD = 2.7 V to 5.5 V 105 125 dB
DYNAMIC PERFORMANCE
Gain Bandwidth Product GBP First gain stage, TA = 25°C 2 MHz Second gain stage, TA = 25°C 8 MHz Settling Time t
NOISE PERFORMANCE
Input Referred Noise f = 1 kHz 32 nV/√Hz Low Frequency Noise en p-p f = 0.1 Hz to 10 Hz 0.5 µV p-p Total Harmonic Distortion THD VIN = 16.75 mV rms, f = 1 kHz −100 dB
DIGITAL INTERFACE
Input Current 2 µA DIGIN Pulse Width to Load 0 tw DIGIN Pulse Width to Load 1 tw Time Between Pulses at DIGIN tw DIGIN Low TA = 25°C 0.2 × VDD V DIGIN High TA = 25°C 0.8 × VDD V DIGOUT Logic 0 TA = 25°C 0.2 × VDD V DIGOUT Logic 1 TA = 25°C 0.8 × VDD V
B
OS
SC
OL
OH
SY
s
0
1
s
65 nV/°C
OS
10 18 25 nA 1 4 nA
= 0.9 V to 1.5 V, AV = 1300 96 112 dB
CM
Source −12 −7 mA
RL = 10 kΩ to 2.7 V 30 mV RL = 10 kΩ to 0 V 2.64 V
VPOS = VNEG = 1.35 V, VDAC code = 128, VOUT = 1.35 V
To 0.1%, 2 V output step, T
= 25°C
A
TA = 25°C 0.05 10 µs TA = 25°C 50 µs TA = 25°C 10 µs
1.8 mA
8 µs
Rev. A | Page 4 of 24
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ABSOLUTE MAXIMUM RATINGS

Table 3.
Parameter Rating
Supply Voltage 6 V Input Voltage VSS − 0.3 V to VDD + 0.3 V Differential Input Voltage Output Short-Circuit Duration to
VSS or VDD ESD (Human Body Model) 2000 V Storage Temperature Range −65°C to +150°C Operating Temperature Range −40°C to +125°C Junction Temperature Range −65°C to +150°C Lead Temperature 300°C
1
Differential input voltage is limited to ±5.0 V or ± the supply voltage,
whichever is less.
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
1
±6.0 V Indefinite

THERMAL RESISTANCE

θJA is specified for the worst-case conditions, that is, a device soldered in a circuit board for LFCSP_VQ packages.
Table 4. Thermal Resistance
Package Type θ
8-Lead SOIC_N (R) 158 43 °C/W 16-Lead LFCSP_VQ (CP) 44 31.5 °C/W
JA
θ
JC
Unit

ESD CAUTION

Rev. A | Page 5 of 24
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AD8557
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PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS

AVDD
DVDD
AVSS
DVSS
161514
13
12
VDD
DIGOUT
DIGIN
VNEG
1
AD8557
2
TOP VIEW
3
(Not to Scale)
4
VSS
8
VOUT
7
VCLAMP
6
VPOS
5
1
NC
DIGOUT
NC
DIGIN
06013-002
PIN 1 INDICATO R
2
AD8557
3
TOP VIEW
4
(Not to Scal e)
5
678
NC
NC
VNEG
NC = NO CONNECT
VOUT
11
NC
10
VCLAMP
9
NC
VPOS
6013-003
Figure 2. 8-Lead SOIC_N Pin Configuration
Figure 3. 16-Lead LFCSP_VQ Pin Configuration
Table 5. Pin Function Descriptions
Pin No.
SOIC_N LFCSP_VQ
Mnemonic
Description
1 VDD Positive Supply Voltage. 2 2 DIGOUT In read mode, this pin functions as a digital output. 3 4 DIGIN 4 6 VNEG 5 8 VPOS 6 10 VCLAMP 7 12 VOUT 8 VSS 13, 14 DVSS, AVSS 15, 16 DVDD, AVDD
Digital Input. Negative Amplifier Input (Inverting Input). Positive Amplifier Input (Noninverting Input). Set Clamp Voltage at Output. Amplifier Output. Negative Supply Voltage. Negative Supply Voltage. Positive Supply Voltage.
1, 3, 5, 7, 9, 11 NC Do Not Connect.
Rev. A | Page 6 of 24
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AD8557
(
V
(
V
(
V
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TYPICAL PERFORMANCE CHARACTERISTICS

20
15
)
10
µ
5
0
5
10
INPUT OFFSET VOLTAGE
15
20
012345
+125°C
+25°C
–40°C
COMMON-MODE VOLTAGE (V)
VSY = 5V
Figure 4. Input Offset Voltage vs. Common-Mode Voltage, VSY = 5 V
06013-004
180
160
140
120
100
80
60
NUMBER OF AMPLIFIERS
40
20
0
6810 4 6 8 10
2402
INPUT OFFSET VOLTAGE (µV)
Figure 7. Input Offset Voltage Distribution, V
= 2.7 V
SY
06013-007
10
8
6
)
µ
4
2
0
2
4
INPUT OFFSET VOLTAGE
6
8
10
0 0.5 1.0 1.5 2.0 2.5
+125°C
+25°C
–40°C
COMMON-MODE VOLTAGE (V)
VSY = 2.7V
Figure 5. Input Offset Voltage vs. Common-Mode Voltage, V
180
160
140
120
100
80
60
NUMBER OF AMPLI FIERS
40
20
0
6810 4 6 8 10
Figure 6. Input Offset Voltage Distribution, V
2402
INPUT OFFSET VOLTAGE (µV )
= 5 V
SY
= 2.7 V
SY
15
10
)
µ
5
0
5
INPUT OFFSET VOLTAGE
10
15
06013-005
25 5002550
TEMPERATURE ( °C)
75 100 125 150 175
5V
2.7V
06013-008
Figure 8. Input Offset Voltage vs. Temperature
30
25
20
15
10
NUMBER OF AMPLIFIERS
5
0
06013-006
10 15 20 25 30 35 40 45 50 55 60 65
05
TCVOS (nV/°C)
Figure 9. T
at VSY = 5 V, −40°C ≤TA ≤ +125°C
CVOS
06013-009
Rev. A | Page 7 of 24
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AD8557
(
A
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35
0.5
30
25
20
15
10
NUMBER OF AMPLIFIERS
5
0
20
)
18
n
16
14
INPUT BIAS CURRENT
12
10 15 20 25 30 35 40 45 50 55 60 65
05
Figure 10. T
at VSY = 2.7 V, −40°C ≤ TA ≤ +125°C
CVOS
25 5002550
TEMPERATURE ( °C)
Figure 11. Input Bias Current at V
V
TCVOS (nV/°C)
75 100 125 150 175
POS, VNEG vs. Temperature,
= 5 V, 2.7 V
SY
IB 5V
+I
B
5V
0.3
0.1
(nA)
OS
I
–0.1
–0.3
–0.5
–50 –25 0 25 50 75 100 125 150 175
06013-010
TEMPERATURE (° C)
06013-012
Figure 13. Input Offset Current vs. Temperature
3.0
2.5
2.0
1.5
1.0
DIGITAL INPUT CURRENT (µA)
0.5
0
05
06013-011
1234
DIGITAL INPUT VOLTAGE (V)
+25°C
–40°C
+125°C
VSY = 5V
06013-014
Figure 14. Digital Input Current vs. Digital Input Voltage (Pin 4)
100
10
1
INPUT BIAS CURRENT (nA)
0.1 05
1234
COMMON-MO DE VOLTAGE (V)
06013-013
Figure 12. Input Bias Current at VPOS, VNEG
s. Common-Mode Voltage, T
v
= 25°C
A
1000
+25°C
100
VCLAMP CURRENT (n A)
10
05
1234
VCLAMP VOLTAGE (V)
Figure 15. VCLAMP Current over Temperature at V
vs. VCLAMP Voltage
Rev. A | Page 8 of 24
+125°C
–40°C
VSY = 5V
= 5 V
SY
06013-015
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AD8557
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1000
+125°C
+25°C
120
100
80
HIGH GAIN +1300
100
–40°C
VCLAMP CURRENT (nA)
10
0.5 1.51.0 2.0 2.5
03
VCLAMP VOLTAGE (V)
Figure 16. VCLAMP Current over Temperature at V
VSY = 2.7V
= 2.7 V
SY
.0
06013-016
60
CMRR (dB)
40
20
0
0.1 1000
Figure 19. CMRR vs. Frequency, V
vs. VCLAMP Voltage
2.0
1.5
1.0
(mA)
SY
I
0.5
0
065
1234
V
(V)
SY
Figure 17. Supply Current (I
) vs. Supply Voltage
SY
06013-017
120
100
80
60
CMRR (dB)
40
20
0
0.1 1000
Figure 20. CMRR vs. Frequency, V
LOW GAIN +28
1 10 100
FREQUENCY (kHz)
SY
HIGH GAI N +1300
LOW GAIN +28
1 10 100
FREQUENCY (kHz)
= 2.7 V
SY
= 5 V
06013-019
06013-020
3.0
2.5
2.0
1.5
(mA)
SY
I
1.0
0.5
0 –50 175–25 0 25 50 75 100 125 150
Figure 18. Supply Current (I
ISY 5V
TEMPERATURE (° C)
ISY 2.7V
) vs. Temperature
SY
06013-018
Rev. A | Page 9 of 24
150
130
110
90
CMRR GAIN +1300
70
CMRR (dB)
50
30
10
–50 175
–25 0 25 50 75 100 125 150
Figure 21. CMRR vs. Temperature a
CMRR GAIN +28
CMRR GAIN +448
TEMPERATURE (°C)
t Different Gains, V
= 5 V
SY
06013-021
Page 10
AD8557
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140
120
100
CMRR (dB)
Figure 22. CMRR vs. Temperature a
CMRR GAIN +28
CMRR GAIN +448
80
60
40
20
0
–50 175
REF 502µV MARKER 20 000.0Hz
START .0 Hz STOP 1 000 000.0Hz
CMRR GAIN +1300
–25 0 25 50 75 100 125 150
TEMPERATURE (°C)
t Different Gains, V
5dB/DIV RANGE 12.5mV 1.89µV/√Hz
RBW 100Hz VBW 300Hz ST 900s
= 2.7 V
SY
6013-023
Figure 23. Input Voltage Noise Density vs. Frequency (0 Hz to 1000 kHz)
CHANNEL 1
16.6mV p-p
1
VOLTAG E NOISE, GAIN = 28 × 1000
CH1 10.0mV M 1.00s A CH1 –2.80mV
06013-022
Figure 25. Low Frequency Input Volt
70
60
HIGH GAIN +1300 62.28dB
50
40
30
LOW G AIN +28 28.9d B
20
GAIN (dB)
10
0
–10
–20
0.1 10k
1101001k
age Noise 0.1 Hz to 10 Hz, V
VSY = 5V
FREQUENCY (kHz)
Figure 26. Closed-Loop Gain vs. Frequency Measured at Output Pin, V
= 2.7 V
SY
06013-025
= 5 V
SY
06013-026
70
60
HIGH GAIN +1300 62.28dB
CHANNEL 1
15.2mV p-p
1
VOLTAG E NOISE, GAIN = 28 × 1000
CH1 10.0mV M 1.00s A CH1 –2.80mV
Figure 24. Low Frequency Input Voltage Noise, 0.1 Hz to 10 Hz, V
= 5 V
SY
06013-024
50
40
30
LOW G AIN +28 28.9d B
20
GAIN (dB)
10
0
–10
–20
0.1 10k
1101001k
FREQUENCY (kHz)
Figu re 27. Cl osed-Loop G ain vs. F requency Measured at Output Pin, V
Rev. A | Page 10 of 24
VSY = 2.7V
= 2.7 V
SY
06013-027
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10
1
SOURCE
0.1
OUTPUT VOLTAGE (V)
0.01
SINK
VSY = 5V
1
2
0.001
0.01 100
0.1 1 10
LOAD CURRENT (mA)
Figure 28. Output Voltage to Supply Rail vs. Load Current
100
ILIMSINK 5V
50
ILIMSINK 2.7V
0
(mA)
SC
I
–50
–100
–25 0 25 50 75 100 125 150
–50 175
ILIMS RC 2.7V
ILIMSRC 5V
TEMPERATURE (° C)
Figure 29. Output Short-Circuit vs. Temperature
CH1 2.0V CH2 1. 0V M 100µs
06013-028
T 23.80%
A CH1 800mV
06013-042
Figure 31. Power-On Response at 125°C
1
2
CH1 2.0V CH2 1. 0V M 100µs
06013-029
175
Figure 32. Power-On Response at −40°C
PSRR 2.7V TO 5.5V
T 23.80%
A CH1 800mV
06013-043
160
145
1
PSRR (dB)
130
115
2
100
–25 0 25 50 75 100 125 150
CH1 2.0V CH2 1. 0V M 100µs
T 23.80%
Figure 30. Power-On Response at 25°C
A CH1 800mV
06013-041
–50 175
Figure 33. PSRR vs. Temperature
Rev. A | Page 11 of 24
TEMPERATURE (° C)
06013-030
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140
120
100
80
60
PSRR (dB)
40
20
0
0.01 100
0.10.1 1 10
FREQUENCY (kHz)
GAIN = +1300
GAIN = +28
Figure 34. PSRR vs. Frequency
CHANNEL 3 +OVER
5.967%
CHANNEL 3 –OVER
6.878%
3
2
CH2 1.0V M 10.0µs
06013-031
T 23.20%
Figure 37. Large Signal Response, C
2
A CH2 0V
= 0 pF
L
06013-044
CH3 50.0mV M 10.0µs
T 24.20%
Figure 35. Small Signal Response, V
3
CH3 50.0mV M 10.0µs
T 24.20%
Figure 36. Small Signal Response, V
A CH3 12.0mV
= 5 V, CL = 100 pF
SY
CHANNEL 3 +OVER
98.13%
CHANNEL 3 –OVER
54.94%
A CH2 480µV
= 5 V, CL = 15 nF
SY
CH2 1.0V M 10.0µs
06013-032
T 23.20%
Figure 38. Large Signal Response, C
60
VSY = 5V GAIN = +28
50
40
30
(dB)
20
OUT
Z
10
0
–10
–20
0.1 1000
06013-033
1 10 100
FREQUENCY (kHz)
Figure 39. Output Imped
ance vs. Frequency
A CH2 0V
= 5 nF
L
06013-045
06013-034
Rev. A | Page 12 of 24
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VSY = ±2.5V GAIN = +28 T
= 25°C
A
1
2
CH1 50.0mV CH2 2. 00V M 1.00µ s A CH1 57.0mV
Figure 40. Positive Overload Recovery
1
VSY = ±2.5V GAIN = +28 T
= 25°C
A
2
CH1 10.0mV CH2 2.00V M 10.0µs A CH1 –5.80mV
Figure 41. Negative Overload Recovery
VSY = ±2.5V GAIN = +1300 T
= 25°C
A
1
2
06013-035
CH1 50.0mV CH2 2.00V M 1. 00µs
T 4.00µs
A CH1 –21.0mV
06013-038
Figure 43. Positive Overload Recovery (Gain = 1300)
10
5
2
1
0.5
0.2
THD + N (%)
0.1
0.05
0.02
0.01
06013-036
20 20k
100 200 50050 1k 2k 5k 10k
FREQUENCY (Hz)
06013-046
Figure 44. THD + N vs. Frequency
VSY = ±2.5V GAIN = +1300 T
= 25°C
A
1
2
CH1 10.0mV CH2 2.00V M 10.0µ s
T 10.00%
A CH1 10.8mV
06013-037
Figure 42. Negative Overload Recovery (Gain = 1300)
Rev. A | Page 13 of 24
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VOUT
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THEORY OF OPERATION

A1, A2, R1, R2, R3, P1, and P2 form the first gain stage of the differential amplifier. A1 and A2 are auto-zeroed op amps that minimize input offset errors. P1 and P2 are digital potentiome­ters, guaranteed to be monotonic. Programming P1 and P2 allows the first stage gain to be varied from 2.8 to 5.2 with 7-bit resolution (see
justment resolution of 0.49%. Because R1, R2, R3, P1, and P2
ad
Tabl e 6 and Equation 1), giving a fine gain
each have a similar temperature coefficient, the first stage gain temperature coefficient is lower than 100 ppm/°C.
Code
5.2
×
82
.GAIN1
2.8
271
(1)
⎟ ⎠
A3, R4, R5, R6, R7, P3, and P4 form the second gain stage of the dif
ferential amplifier. A3 is an auto-zeroed op amp that mini­mizes input offset errors and also includes an output buffer. P3 and P4 are digital potentiometers, which allow the second stage gain to be varied from 10 to 250 in eight steps (see
R6, R7, P3, and P4 each have a similar temperature coefficient,
R5,
Tabl e 7). R4,
so the second stage gain temperature coefficient is lower than 100 ppm/°C. The output stage of A3 is supplied from a buffered version of VCLAMP instead of VDD, allowing the positive swing to be limited.
A4 implements a voltage buffer, which provides the positive s
upply to the output stage of A3. Its function is to limit VOUT to a maximum value, useful for driving analog-to-digital converters (ADC) operating on supply voltages lower than VDD. The input to A4, VCLAMP, has a very high input resistance. It should be connected to a known voltage and not be left floating. However, the high input impedance allows the clamp voltage to be set using a high impedance source, such as a potential divider. If the maximum value of VOUT does not need to be limited, VCLAMP should be connected to VDD.
An 8-bit digital-to-analog converter (DAC) is used to generate a va
riable offset for the amplifier output. This DAC is guaranteed
to be monotonic. To preserve the ratiometric nature of the input signal, the DAC references are driven from VSS and VDD, and the DAC output can swing from VSS (Code 0) to VDD (Code
255). The 8-bit resolution is equivalent to 0.39% of the difference between VDD and VSS, for example, 19.5 mV with a 5 V supply. The DAC output voltage (VDAC) is given approximately by
Code
+
5.0
256
()
VSSVSSVDD
(2)
VDAC is lower than
VDAC +
⎜ ⎝
where the temperature coefficient of 200 ppm/°C.
The amplifier output voltage (VOUT) is given by
)
GAIN is the product of the first and second stage gains.
where
VDD
VNEG
VPOS
A1
VSS
VDD
A2
VSS
Figure 45. Functional Schematic
P3
R4
R1
P1
R3
P2
R2
R5 R7
P4
VDD
DAC
VSS
R6
VDD
A3
VSS
(3)
VDACVNEGVPOSGAINVOUT +
DD
VCLAMP
A4
VSS
06013-001
Rev. A | Page 14 of 24
Page 15
AD8557
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GAIN VALUES

Table 6. First Stage Gain vs. First Stage Gain Code
First Stage Gain Code
0 2.800 32 3.273 64 3.825 96 4.471 1 2.814 33 3.289 65 3.844 97 4.493 2 2.827 34 3.305 66 3.863 98 4.515 3 2.841 35 3.321 67 3.881 99 4.537 4 2.855 36 3.337 68 3.900 100 4.559 5 2.869 37 3.353 69 3.919 101 4.581 6 2.883 38 3.370 70 3.939 102 4.603 7 2.897 39 3.386 71 3.958 103 4.626 8 2.911 40 3.403 72 3.977 104 4.649 9 2.926 41 3.419 73 3.997 105 4.671 10 2.940 42 3.436 74 4.016 106 4.694 11 2.954 43 3.453 75 4.036 107 4.717 12 2.969 44 3.470 76 4.055 108 4.740 13 2.983 45 3.487 77 4.075 109 4.763 14 2.998 46 3.504 78 4.095 110 4.786 15 3.012 47 3.521 79 4.115 111 4.810 16 3.027 48 3.538 80 4.135 112 4.833 17 3.042 49 3.555 81 4.156 113 4.857 18 3.057 50 3.573 82 4.176 114 4.881 19 3.072 51 3.590 83 4.196 115 4.905 20 3.087 52 3.608 84 4.217 116 4.929 21 3.102 53 3.625 85 4.237 117 4.953 22 3.117 54 3.643 86 4.258 118 4.977 23 3.132 55 3.661 87 4.279 119 5.001 24 3.147 56 3.679 88 4.300 120 5.026 25 3.163 57 3.697 89 4.321 121 5.050 26 3.178 58 3.715 90 4.342 122 5.075 27 3.194 59 3.733 91 4.363 123 5.100 28 3.209 60 3.751 92 4.384 124 5.125 29 3.225 61 3.770 93 4.406 125 5.150 30 3.241 62 3.788 94 4.427 126 5.175 31 3.257 63 3.806 95 4.449 127 5.200
First Stage Gain
First Stage Gain Code
First Stage Gain
First Stage Gain Code
First Stage Gain
First Stage Gain Code
First Stage Gain
Table 7. Second Stage Gain and Gain Ranges vs. Second Stage Gain Code
Second Stage Gain Code Second Stage Gain Minimum Combined Gain Maximum Combined Gain
0 10 28.0 52.0 1 16 44.8 83.2 2 25 70.0 130.0 3 40 112.0 208.0 4 63 176.4 327.6 5 100 280.0 520.0 6 160 448.0 832.0 7 250 700.0 1300.0
Rev. A | Page 15 of 24
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V
V
V
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OPEN WIRE FAULT DETECTION

The inputs to A1 and A2, VNEG and VPOS, each have a com­parator to detect whether VNEG or VPOS exceeds a threshold voltage, nominally VDD − 2.0 V. If VNEG > (VDD − 2.0 V) or VPOS > (VDD − 2.0 V), VOUT is clamped to VSS. The output current limit circuit is disabled in this mode, but the maximum sink current is approximately 10 mA when VDD = 5 V. The inputs to A1 and A2, VNEG and VPOS, are also pulled up to VDD by currents IP1 and IP2. These are both nominally 16 nA and matched to within 3 nA. If the inputs to A1 or A2 are accidentally left floating, as with an open wire fault, IP1 and IP2 pull them to VDD, which would cause VOUT to swing to VSS, allowing this fault to be detected. It is not possible to disable IP1 and IP2, nor the clamping of VOUT to VSS, when VNEG or VPOS approaches VDD.

SHORTED WIRE FAULT DETECTION

The AD8557 provides fault detection in the case where VPOS, VNEG, or VCLAMP shorts to VDD and VSS. Figure 46 shows th
e voltage regions at VPOS, VNEG, and VCLAMP that trigger an error condition. When an error condition occurs, the VOUT pin is shorted to VSS. Tab le 8 lists the voltage levels shown in Figure 46.
POS
ERROR
NORMAL
ERROR
VDD
VINH
VINL VSS
Figure 46. Voltage Regions at VPOS, VNEG, and VCLAMP
t
Table 8. Typical VINL, VINH, and VCLL Values (VDD = 5 V)
Voltage Min (V) Max (V) VOUT Condition
VINH 3.9 4.2 Short to VSS fault detection VINL 0.195 0.55 Short to VSS fault detection VCLL 1.0 1.2 Short to VSS fault detection
NEG
ERROR
NORMAL
ERROR
hat Trigger a Fault Condition
t
WS
t
W0
VDD
VINH
VINL VSS
t
W1
CLAMP
NORMAL
ERROR
VDD
VCLL
VSS
t
WS
t
WS
t
W0
06013-039
t

FLOATING VPOS, VNEG, OR VCLAMP FAULT DETECTION

A floating fault condition at the VPOS, VNEG, or VCLAMP pins is detected by using a low current to pull a floating input into an error voltage range, defined in the previous section. In this way, the VOUT pin is shorted to VSS when a floating input is detected. Tabl e 9 lists the currents used.
Table 9. Floating Fault Detection at VPOS, VNEG, and VCLAMP
Pin Typical Current Goal of Current
VPOS 16 nA pull-up Pull VPOS above VINH VNEG 16 nA pull-up Pull VNEG above VINH VCLAMP 0.2 µA pull-down Pull VCLAMP below VCLL

DEVICE PROGRAMMING

Digital Interface

The digital interface allows the first stage gain, second stage gain, and output offset to be adjusted and allows desired values for these parameters to be permanently stored by selectively blowing polysilicon fuses. To minimize pin count and board space, a single-wire digital interface is used. The digital input pin, DIGIN, has hysteresis to minimize the possibility of inadvertent triggering with slow signals. It also has a pull-down current sink to allow it to be left floating when programming is not being performed. The pull-down ensures inactive status of the digital input by forcing a dc low voltage on DIGIN.
A short pulse at DIGIN from low to high and back to low again, s
uch as between 50 ns and 10 µs long, loads a 0 into a shift register. A long pulse at DIGIN, such as 50 µs or longer, loads a 1 into the shift register. The time between pulses should be at least 10 µs. Assuming VSS = 0 V, voltages at DIGIN between VSS and 0.2 × VDD are recognized as a low, and voltages at DIGIN between 0.8 × VDD and VDD are recognized as a high. A timing diagram example, en
tering Code 010011 into the shift register.
t
W1
W0
t
WS
Figure 47, shows the waveform for
t
WS
t
W1
WAVEFORM
CODE
01001 1
Figure 47. Timing Diagram for Code 010011
Rev. A | Page 16 of 24
06013-040
Page 17
AD8557
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Table 10. Timing Specifications
Timing Parameter Description Specification
tw0 Pulse width for loading 0 into shift register Between 50 ns and 10 µs tw1 Pulse width for loading 1 into shift register ≥50 µs tws Width between pulses ≥10 µs
Table 11. 38-Bit Serial Word Format
Field No. Bits Description
0 0 to 11 12-bit start of packet 1000 0000 0001 1 12 to 13 2-bit function 00: change sense current 01: simulate parameter value 10: program parameter value 11: read parameter value 2 14 to 15 2-bit parameter 00: second stage gain code 01: first stage gain code 10: output offset code 11: other functions 3 16 to 17 2-bit dummy 10 4 18 to 25 8-bit value Parameter 00 (second stage gain code): 3 LSBs used Parameter 01 (first stage gain code): 7 LSBs used Parameter 10 (output offset code): all 8 bits used Parameter 11 (other functions) Bit 0 (LSB): master fuse Bit 1: fuse for production test at Analog Devices 5 26 to 37 12-bit end of packet 0111 1111 1110
A 38-bit serial word is used, divided into 6 fields. Assuming
h bit can be loaded in 60 µs, the 38-bit serial word transfers
eac in 2.3 ms. Tabl e 11 summarizes the word format.
Field 0 and Field 5 are the start-of-packet field and end-of-
acket field, respectively. Matching the start-of-packet field with
p 1000 0000 0001 and the end-of-packet field with 0111 1111 1110 ensures that the serial word is valid and enables decoding of the other fields.
Field 3 breaks up the data and ensures that no data combination
n inadvertently trigger the start-of-packet and end-of-packet
ca fields. Field 0 should be written first and Field 5 written last.
Within each field, the MSB must be written first and the LSB
itten last. The shift register features power-on reset to mini-
wr mize the risk of inadvertent programming; power-on reset occurs when VDD is between 0.7 V and 2.2 V.

Initial State

Initially, all the polysilicon fuses are intact. Each parameter has the value 0 assigned (see Tabl e 1 2 ).
Table 12. Initial State Before Programming
Second Stage Gain Code = 0 Second Stage Gain = 10
First stage gain code = 0 First stage gain = 2.8 Output offset code = 0 Output offset = VSS Master fuse = 0 Master fuse not blown
When power is applied to a device, parameter values are taken either from internal registers, if the master fuse is not blown, or from the polysilicon fuses, if the master fuse is blown. Programmed values have no effect until the master fuse is blown. The internal registers feature power-on reset, so the unprogrammed devices enter a known state after power-up. Power-on reset occurs when VDD is between 0.7 V and 2.2 V.
Rev. A | Page 17 of 24
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Simulation Mode

The simulation mode allows any parameter to be temporarily changed. These changes are retained until the simulated value is reprogrammed, the power is removed, or the master fuse is blown. Parameters are simulated by setting Field 1 to 01, selecting the desired parameter in Field 2, and selecting the desired value for the parameter in Field 4. Note that a value of 11 for Field 2 is ignored during the simulation mode. Examples of temporary settings follow:
Setting the second stage gain code (Parameter 00) to 011
and the second stage gain to 50 produces: 1000 0000 0001 01 00 10 0000 0011 0111 1111 1110
Setting the first stage gain code (Parameter 01) to 000 1011
and the first stage gain to 4.166 produces: 1000 0000 0001 01 01 10 0000 1011 0111 1111 1110
A first stage gain of 4.166 with a second stage gain of 50
ives a total gain of 208.3. This gain has a maximum
g tolerance of 2.5%.
Set the output offset code (Parameter 10) to 0100 0000
and the output offset to 1.260 V when VDD = 5 V and VSS = 0 V. This output offset has a maximum tolerance of 0.8%: 1000 0000 0001 01 10 10 0100 0000 0111 1111 1110

Programming Mode

Intact fuses give a bit value of 0. Bits with a desired value of 1 need to have the associated fuse blown. Because a relatively large current is needed to blow a fuse, only one fuse can be reliably blown at a time. Thus, a given parameter value may need several 38-bit words to allow reliable programming.
A 5.75 V (±0.25 V) supply is required when blowing fuses to
mize the on resistance of the internal MOS switches that
mini blow the fuse. The power supply voltage must not exceed the absolute maximum rating and must be able to deliver 250 mA of current.
At least 10 µF (tantalum type) of decoupling capacitance is
eded across the power pins of the device during program-
ne ming. The capacitance can be on the programming apparatus as long as it is within 2 inches of the device being programmed. An additional 0.1 F (ceramic type) in parallel with the 10 recommended within ½ inch of the device being programmed. A minimum period of 1 ms should be allowed for each fuse to blow. There is no need to measure the supply current during programming.
The best way to verify correct programming is to use the read
ode to read back the programmed values. Then, remeasure
m the gain and offset to verify these values. Programmed fuses have no effect on the gain and output offset until the master fuse is blown. After blowing the master fuse, the gain and output offset are determined solely by the blown fuses, and the simulation mode is permanently deactivated.
μF is
Parameters are programmed by setting Field 1 to 10, selecting t
he desired parameter in Field 2, and selecting a single bit with the value 1 in Field 4.
As an example, suppose the user wants to permanently set the
econd stage gain to 50. Parameter 00 needs to have the value
s 0000 0011 assigned. Two bits have the value 1, so two fuses need to be blown. Because only one fuse can be blown at a time, this code can be used to blow one fuse: 1000 0000 0001 10 00 10 0000 0010 0111 1111 1110
The MOS switch that blows the fuse closes when the complete
acket is recognized, and opens when the start-of-packet,
p dummy, or end-of-packet fields are no longer valid. After 1 ms, this second code is entered to blow the second fuse: 1000 0000 0001 10 00 10 0000 0001 0111 1111 1110
To permanently set the first stage gain to a nominal value of
arameter 01 needs to have the value 000 1011 assigned.
4.151, P Three fuses need to be blown, and the following codes are used, with a 1 ms delay after each code: 1000 0000 0001 10 01 10 0000 1000 0111 1111 1110 1000 0000 0001 10 01 10 0000 0010 0111 1111 1110 1000 0000 0001 10 01 10 0000 0001 0111 1111 1110
To permanently set the output offset to a nominal value of
1.260 V w to have the value 0100 0000 assigned. If one fuse needs to be blown, use the following code: 1000 0000 0001 10 10 10 0100 0000 0111 1111 1110
Finally, to blow the master fuse to deactivate the simulation
ode and prevent further programming, use code:
m 1000 0000 0001 10 11 10 0000 0001 0111 1111 1110
There are a total of 20 programmable fuses. Because each fuse
equires 1 ms to blow, and each serial word can be loaded in
r
2.3 ms, the maximum time needed to program the fuses can be as low as 66 ms.
hen VDD = 5 V and VSS = 0 V, Parameter 10 needs

Read Mode

The values stored by the polysilicon fuses can be sent to the DIGOUT pin to verify correct programming. Normally, the DIGOUT pin is only connected to the second gain stage output. During read mode, however, the DIGOUT pin is also connected to the output of a shift register to allow the polysilicon fuse contents to be read. Because VOUT is a buffered version of DIGOUT, VOUT also outputs a digital signal during read mode.
Read mode is entered by setting Field 1 to 11 and selecting the
ed parameter in Field 2. Field 4 is ignored. The parameter
desir value, stored in the polysilicon fuses, is loaded into an internal shift register, and the MSB of the shift register is connected to the DIGOUT pin. Pulses at DIGIN shift out the shift register contents to the DIGOUT pin, allowing the 8-bit parameter value to be read after seven additional pulses; shifting occurs on the falling edge of DIGIN. An eighth pulse at DIGIN disconnects DIGOUT from the shift register and terminates the read mode.
Rev. A | Page 18 of 24
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AD8557
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If a parameter value is less than eight bits long, the MSBs of the shift register are padded with 0s.
For example, to read the second stage gain, this code is used: 1000 0000 0001 11 00 10 0000 0000 0111 1111 1110
ecause the second stage gain parameter value is only three bits
B long, the DIGOUT pin has a value of 0 when this code is entered, and remains 0 during four additional pulses at DIGIN. The fifth, sixth, and seventh pulses at DIGIN return the 3-bit value at DIGOUT, the seventh pulse returns the LSB. An eighth pulse at DIGIN terminates the read mode.

Sense Current

A sense current is sent across each polysilicon fuse to determine whether it has been blown. When the voltage across the fuse is less than approximately 1.5 V, the fuse is considered not blown, and Logic 0 is output from the OTP cell. When the voltage across the fuse is greater than approximately 1.5 V, the fuse is considered blown, and Logic 1 is output.
When the AD8557 is manufactured, all fuses have a low
esistance. When a sense current is sent through the fuse, a
r voltage less than 0.1 V is developed across the fuse. This is much lower than 1.5 V, so Logic 0 is output from the OTP cell. When a fuse is electrically blown, it should have a very high resistance. When the sense current is applied to the blown fuse, the voltage across the fuse should be larger than 1.5 V, so Logic 1 is output from the OTP cell.
It is theoretically possible, though very unlikely, for a fuse to b
e incompletely blown during programming, assuming the required conditions are met. In this situation, the fuse could have a medium resistance, neither low nor high, and a voltage of approximately 1.5 V could be developed across the fuse. Thus, the OTP cell could output Logic 0 or Logic 1, depending on temperature, supply voltage, and other variables.
To detect this undesirable situation, the sense current can be
wered by a factor of 4 using a specific code. The voltage devel-
lo oped across the fuse would then change from 1.5 V to 0.38 V, and the output of the OTP would be a Logic 0 instead of the expected Logic 1 from a blown fuse. Correctly blown fuses would still output a Logic 1. In this way, incorrectly blown fuses can be detected. Another specific code would return the sense current to the normal (larger) value. The sense current cannot be permanently programmed to the low value. When the AD8557 is powered up, the sense current defaults to the high value.
The low sense current code is 1000 0000 0001 00 00 10 XXXX
The normal (high) sense current code is 1000 0000 0001 00 00 10 XXXX
XXX1 0111 1111 1110
XXX0 0111 1111 1110

Programming Procedure

For reliable fuse programming, it is imperative to follow the programming procedure requirements, especially the proper supply voltage during programming:
When programming the AD8557, the temperature of the
1. device must be between 10°C to 40°C.
Set VDD and VSS to the desired values in the application.
2. Use simulation mode to test and determine the desired codes for the second stage gain, first stage gain, and output offset. The nominal values for these parameters are shown in Tab l e 6 , Ta bl e 7, Equation 2, and Equation 3; use the co
des corresponding to these values as a starting point. However, because actual parameter values for given codes vary from device to device, some fine tuning is necessary for the best possible accuracy.
One way to choose these values is to set the output offset to a
n approximate value, such as Code 128 for midsupply, to allow the required gain to be determined. Then, set the second stage gain so the minimum first stage gain (Code 0) gives a lower gain than required, and the maximum first stage gain (Code 127) gives a higher gain than required. After choosing the second stage gain, the first stage gain can be chosen to fine tune the total gain. Finally, the output offset can be adjusted to give the desired value. After determining the desired codes for second stage gain, first stage gain, and output offset, the device is ready for permanent programming.
Note that once a programming attempt has been made for a
ny fuse, there should be no further attempt to blow that fuse. If a fuse does not program to the expected state, discard the unit. The expected incidence rate of attempted but unblown fuses is very small when following the proper programming procedure and conditions.
3.
Set VSS to 0 V and VDD to 5.75 V (±0.25 V). Power
supplies should be capable of supplying 250 mA at the required voltage and properly bypassed as described in the Programming Mode section. Use program mode to p
ermanently enter the desired codes for the first stage gain, second stage gain, and output offset. Blow the master fuse to allow the AD8557 to read data from the fuses and to prevent further programming.
4.
Set VDD and VSS to the desired values in the application.
Use read mode with low sense current followed by high sense current to verify programmed codes.
5.
Measure gain and offset to verify correct functionality.
Rev. A | Page 19 of 24
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9.

Determining Optimal Gain and Offset Codes

First, determine the desired gain:
Determine the desired gain, G
1.
(using the measurements
A
obtained from the simulation).
Us e Tabl e 7 to determine G
2. that (2.8 × 1.05) < (G
, the second stage gain, such
2
) < (5.2/1.05). This ensures the
A/G2
first and last codes for the first stage gain are not used, thereby allowing enough first stage gain codes within each second stage gain range to adjust for the 3% accuracy.
Next, set the second stage gain:
Use the simulation mode to set the second stage gain to G
1.
Set the output offset to allow the AD8557 gain to be
2. measured, for example, use Code 128 to set it to midsupply.
Us e Tabl e 6 or Equation 1 to set the first stage gain code
3.
, so the first stage gain is nominally GA/G2.
C
G1
Measure the resulting gain (G
4. 3% of G
Calculate the first stage gain error (in relative terms)
5. E
Calculate the error (in the number of the first stage gain
6. codes) C
Set the first stage gain code to C
7.
Measure the gain (G
8.
.
A
= GB/GBA − 1.
G1
EG1
= EG1/0.00489.
). GC should be closer to GA than to GB. B
C
). GB
B should be within
B
B
− C
G1
EG1
.
Calculate the error (in relative terms) E
Calculate the error (in the number of the first stage gain
10. codes) C
Set the first stage gain code to C
11.
= EG2/0.00489.
EG2
G1
resulting gain should be within one code of G
Finally, determine the desired output offset:
Determine the desired output offset O
1. measurements obtained from the simulation).
Use Equation 2 to set the output offset code C
2. the output offset is nominally O
.
2
Measure the output offset (O
3. 3% of O
Calculate the error (in relative terms) E
4.
Calculate the error (in the number of the output offset
5. codes) C
Set the output offset code to C
6.
Measure the output offset (O
7. than to O
8.
Calculate the error (in relative terms) E
9.
Calculate the error (in the number of the output offset
codes) C
Set the output offset code to C
10.
.
A
= EO1/0.00392.
EO1
. B
B
= EO2/0.00392.
EO2
.
A
). OB
B
− C
O1
). OC should be closer to OA
C
− C
O1
resulting offset should be within one code of O
= GC/GA − 1.
G2
− C
− C
EG1
(using the
A
B should be within
B
O1
.
EO1
O2
− C
EO1
. The
EG2
.
A
such that
O1
= OB/OBA − 1.
= OC/OA − 1.
. The
EO2
.
A
Rev. A | Page 20 of 24
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OUTLINE DIMENSIONS

5.00 (0.1968)
4.80 (0.1890)
4.00 (0.1574)
3.80 (0.1497)
0.25 (0.0098)
0.10 (0.0040)
COPLANARITY
0.10
CONTROLL ING DIMENSI ONS ARE IN MILLIME TERS; INCH DIM ENSIONS (IN PARENTHESES) ARE ROUNDED-OF F MILLIMETER E QUIVALENTS FOR REFERENCE ONLY AND ARE NOT APPROPRI ATE FOR USE IN DESI GN.
85
1
1.27 (0.0500)
SEATING
PLANE
COMPLIANT TO JEDEC STANDARDS MS-012-A A
BSC
6.20 (0.2441)
5.80 (0.2284)
4
1.75 (0.0688)
1.35 (0.0532)
0.51 (0.0201)
0.31 (0.0122)
8° 0°
0.25 (0.0098)
0.17 (0.0067)
0.50 (0.0196)
0.25 (0.0099)
1.27 (0.0500)
0.40 (0.0157)
45°
012407-A
Figure 48. 8-Lead Standard Small Outline Package [SOIC_N]
Nar
row Body
(R-8)
Dimensions shown in millimeters and (inches)
PIN 1
INDICATOR
1.00
0.85
0.80
4.00
12° MAX
SEATING PLANE
BSC SQ
TOP
VIEW
0.80 MAX
0.65 TYP
COMPLIANT TO JEDEC STANDARDS MO-220-VGG C
0.35
0.30
0.25
3.75
BSC SQ
0.20 REF
0.60 MAX
0.65 BSC
0.05 MAX
0.02 NOM
COPLANARIT Y
0.50
0.40
0.30
0.08
Figure 49. 16-Lead Lead Frame Chip Scale Package [LFCSP_VQ]
4
mm × 4 mm Body, Very Thin Quad
(CP-16-10)
Dimensions shown in millimeters
0.60 MAX
13
12
EXPOSED
(BOTTOM VIEW)
9
8
PAD
16
5
1.95 BSC
PIN 1 INDICATOR
1
2.50
2.35 SQ
2.20
4
0.25 MIN
010606-0

ORDERING GUIDE

Model Temperature Range Package Description Package Option
AD8557ACPZ-R2 AD8557ACPZ-REEL AD8557ACPZ-REEL7 AD8557ARZ AD8557ARZ-REEL AD8557ARZ-REEL7 AD8557AR-EVAL Evaluation Board
1
Z = RoHS Compliant Part.
1
1
1
1
1
−40°C to +125°C 16-Lead LFCSP_VQ CP-16-10
−40°C to +125°C 16-Lead LFCSP_VQ CP-16-10
1
−40°C to +125°C 16-Lead LFCSP_VQ CP-16-10
−40°C to +125°C 8-Lead SOIC_N R-8
−40°C to +125°C 8-Lead SOIC_N R-8
−40°C to +125°C 8-Lead SOIC_N R-8
Rev. A | Page 21 of 24
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NOTES
Rev. A | Page 22 of 24
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NOTES
Rev. A | Page 23 of 24
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NOTES
©2007–2008 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D06013-0-1/08(A)
Rev. A | Page 24 of 24
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