Datasheet AD8519, AD8529 Datasheet (Analog Devices)

8 MHz Rail-to-Rail

1

2

3

5

4

2IN A

+IN A

V+

OUT A

AD8519

V2

a

FEATURES
Space-Saving SOT-23, ␮SOIC Packaging
Wide Bandwidth: 8 MHz @ 5 V
Low Offset Voltage: 1.2 mV Max
Rail-to-Rail Output Swing

2.7 V/␮s Slew Rate
Unity Gain Stable
Single Supply Operation: +2.7 V to +12 V

APPLICATIONS

Portable Communications
Microphone Amplifiers
Portable Phones
Sensor Interface
Active Filters
PCMCIA Cards
ASIC Input Drivers
Wearable Computers
Battery Powered Devices
Voltage Reference Buffers
Personal Digital Assistants

GENERAL DESCRIPTION

The AD8519 and AD8529 are rail-to-rail output bipolar amplifi­ers with a unity gain bandwidth of 8 MHz and a typical voltage
offset of less than 1 mV. The AD8519 brings precision and band­width to the SOT-23 package. The low supply current makes the
AD8519/AD8529 ideal for battery powered applications. The
rail-to-rail output swing of the AD8519/AD8529 is larger than
standard video op amps, making them useful in applications that
require greater dynamic range than standard video op amps. The

+2.7 V/µs slew rate makes the AD8529/AD8549 a good match

for driving ASIC inputs such as voice codecs.

The small SOT-23 package makes it possible to place the AD8519
next to sensors, reducing external noise pickup.

The AD8519/AD8529 is specified over the extended industrial

(–40°C to +125°C) temperature range. The AD8519 is avail-

able in 5-lead SOT-23-5 and SO-8 surface mount packages.

The AD8529 is available in 8-lead SOIC and µSOIC packages.

Operational Amplifiers

AD8519/AD8529

PIN CONFIGURATIONS

8-Lead SOIC

(R Suffix)

AD8519

NC

1

2IN A

2

+IN A

3

V2

4

NC = NO CONNECT

5-Lead SOT-23

(RT Suffix)

8-Lead SOIC

(R Suffix)

OUT A

18

AD8529

27

2IN A
1IN A

TOP VIEW

36
45

V2

8-Lead ␮SOIC

(RM Suffix)

V2

1

AD8529

45

OUT A

2IN A
1IN A

NC

8

V+

7

OUT A

6

NC

5

V1
OUT B

2IN B
1IN B

8

V1

OUT B

2IN B
1IN B

REV. A

Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone] World Wide Web Site: http://www.analog.com
Fax: [phone] © Analog Devices, Inc., 1998

AD8519/AD8529–SPECIFICATIONS

ELECTRICAL CHARACTERISTICS

(VS = +5.0 V, V– = 0 V, VCM = +2.5 V, TA = +25ⴗC unless otherwise noted)

Parameter Symbol Conditions Min Typ Max Units

INPUT CHARACTERISTICS

Offset Voltage V

Offset Voltage V

Input Bias Current I

Input Offset Current I

Input Voltage Range V

OS

OS

B

OS

CM

Common-Mode Rejection Ratio CMRR 0 V ≤ V

Large Signal Voltage Gain A

Offset Voltage Drift ∆V

VO

/∆T2µV/°C

OS

AD8519ART (SOT-23-5) 600 1,100 µV
–40°C ≤ T

≤ +125°C 800 1,300 µV

A

AD8519AR (SO-8), AD8529 600 1,000 µV
–40°C ≤ T

≤ +125°C 1,100 µV

A

300 nA

–40°C ≤ T

≤ +125°C 400 nA

A

±50 nA

–40°C ≤ T

≤ +125°C ±100 nA

A

0+4V

≤ +4.0 V,

CM

–40°C ≤ T

R

= 2 kΩ, +0.5 V < V

L

= 10 kΩ, +0.5 V < V

R

L

= 10 kΩ, –40°C ≤ TA ≤ +125°C 30 V/mV

R

L

≤ +125°C 63 100 dB

A

< +4.5 V 30 V/mV

OUT

< +4.5 V 50 100 V/mV

OUT

Bias Current Drift ∆IB/∆T 500 pA/°C

OUTPUT CHARACTERISTICS

Output Voltage Swing High V

Output Voltage Swing Low V

Short Circuit Current I
Maximum Output Current I

OH

OL

SC

OUT

I

= 250 µA

L

–40°C ≤ T

= 5 mA +4.80 V

I

L

I

= 250 µA

L

–40°C ≤ T

= 5 mA 200 mV

I

L

≤ +125°C +4.90 V

A

≤ +125°C80mV

A

Short to Ground, Instantaneous ±70 mA

±25 mA

POWER SUPPLY

Power Supply Rejection Ratio PSRR V

Supply Current/Amplifier I

SY

= +2.7 V to +7 V, 110 dB

S

–40°C ≤ T

V

OUT

≤ +125°C80dB

A

= +2.5 V 600 1,200 µA

–40°C ≤ TA ≤ +125°C 1,400 µA

DYNAMIC PERFORMANCE

Slew Rate SR +1 V < V
Settling Time t

S

To 0.01% 1,200 ns

< +4 V, R

OUT

= 10 kΩ 2.9 V/µs

L

Gain Bandwidth Product GBP 8 MHz

Phase Margin φ

m

60 Degrees

NOISE PERFORMANCE

Voltage Noise e
Voltage Noise Density e
Current Noise Density i

Specifications subject to change without notice.

p-p 0.1 Hz to 10 Hz 0.5 µV p-p

n

n

n

f = 1 kHz 7 nV/√Hz
f = 1 kHz 0.4 pA/√Hz

–2– REV. A

AD8519/AD8529

ELECTRICAL CHARACTERISTICS

(VS = +3.0 V, V– = 0 V, VCM = +1.5 V, TA = +25ⴗC unless otherwise noted)

Parameter Symbol Conditions Min Typ Max Units

INPUT CHARACTERISTICS

Offset Voltage V

Input Bias Current I
Input Offset Current I
Input Voltage Range V

OS

V

OS

B

OS

CM

Common-Mode Rejection Ratio CMRR 0 V ≤ V

Large Signal Voltage Gain A

VO

AD8519ART (SOT-23-5) 700 1,200 µV
–40°C ≤ T

≤ +125°C 900 1,400 µV

A

AD8519AR (SO-8), AD8529 700 1,100 µV
–40°C ≤ T

≤ +125°C 1,200 µV

A

300 nA

±50 nA

0+2V

≤ +2.0 V,

CM

–40°C ≤ T

R

= 2 kΩ, +0.5 V < V

L

R

= 10 kΩ 20 30 V/mV

L

≤ +125°C5575dB

A

< +2.5 V 20 V/mV

OUT

OUTPUT CHARACTERISTICS

Output Voltage Swing High V

Output Voltage Swing Low V

OH

OL

I

= 250 µA +2.90 V

L

= 5 mA +2.80 V

I

L

I

= 250 µA 100 mV

L

IL = 5 mA 200 mV

POWER SUPPLY

Power Supply Rejection Ratio PSRR V

Supply Current/Amplifier I

SY

= +2.5 V to +7 V,

S

–40°C ≤ T

V

OUT

≤ +125°C6080dB

A

= +1.5 V 600 1,100 µA

–40°C ≤ TA ≤ +125°C 1,300 µA

DYNAMIC PERFORMANCE

Slew Rate SR R
Settling Time t

S

= 10 kΩ 1.5 V/µs

L

To 0.01% 2,000 ns

Gain Bandwidth Product GBP 6 MHz

Phase Margin φ

m

55 Degrees

NOISE PERFORMANCE

Voltage Noise Density e
Current Noise Density i

Specifications subject to change without notice.

n

n

f = 1 kHz 10 nV/√Hz
f = 1 kHz 0.4 pA/√Hz

–3–REV. A

AD8519/AD8529–SPECIFICATIONS

ELECTRICAL CHARACTERISTICS

(VS = +2.7 V, V– = 0 V, VCM = +1.35 V, TA = +25ⴗC unless otherwise noted)

Parameter Symbol Conditions Min Typ Max Units

INPUT CHARACTERISTICS

Offset Voltage V

Input Bias Current I
Input Offset Current I
Input Voltage Range V

OS

V

OS

B

OS

CM

Common-Mode Rejection Ratio CMRR 0 V ≤ V

Large Signal Voltage Gain A

VO

AD8519ART (SOT-23-5) 700 1,400 µV
–40°C ≤ T

≤ +125°C 900 1,600 µV

A

AD8519AR (SO-8), AD8529 700 1,200 µV
–40°C ≤ T

≤ +125°C 1,300 µV

A

300 nA

±50 nA

0+2V

≤ +1.7 V,

CM

–40°C ≤ T

R

= 2 kΩ, +0.5 V < V

L

R

= 10 kΩ 20 30 V/mV

L

≤ +125°C5575dB

A

< +2.2 V 20 V/mV

OUT

OUTPUT CHARACTERISTICS

Output Voltage Swing High V

Output Voltage Swing Low V

OH

OL

I

= 250 µA +2.60 V

L

= 5 mA +2.50 V

I

L

I

= 250 µA 100 mV

L

IL = 5 mA 200 mV

POWER SUPPLY

Power Supply Rejection Ratio PSRR V

Supply Current/Amplifier I

SY

= +2.5 V to +7 V,

S

–40°C ≤ T

V

OUT

≤ +125°C6080dB

A

= +1.35 V 600 1,100 µA

–40°C ≤ TA ≤ +125°C 1,300 µA

DYNAMIC PERFORMANCE

Slew Rate SR R
Settling Time t

S

= 10 kΩ 1.5 V/µs

L

To 0.01% 2,000 ns

Gain Bandwidth Product GBP 6 MHz

Phase Margin φ

m

55 Degrees

NOISE PERFORMANCE

Voltage Noise Density e
Current Noise Density i

Specifications subject to change without notice.

n

n

f = 1 kHz 10 nV/√Hz
f = 1 kHz 0.4 pA/√Hz

–4– REV. A

AD8519/AD8529

ELECTRICAL CHARACTERISTICS

(VS = +5.0 V, V– = –5 V, VCM = 0 V, TA = +25ⴗC unless otherwise noted)

Parameter Symbol Conditions Min Typ Max Units

INPUT CHARACTERISTICS

Offset Voltage V

Input Bias Current I

Input Offset Current I

Input Voltage Range V

OS

V

OS

B

OS

CM

Common-Mode Rejection Ratio CMRR –4.9 V ≤ V

Large Signal Voltage Gain A

Offset Voltage Drift ∆V

VO

/∆T2µV/°C

OS

AD8519ART (SOT-23-5) 600 1,100 µV
–40°C ≤ T

≤ +125°C 800 1,300 µV

A

AD8519AR (SO-8), AD8529 600 1,000 µV
–40°C ≤ T

≤ +125°C 1,100 µV

A

VCM = 0 V 300 nA

= 0 V, –40°C ≤ TA ≤ +125°C 400 nA

V

CM

V

= 0 V ±50 nA

CM

= 0 V, –40°C ≤ TA ≤ +125°C ±100 nA

V

CM

–5 +4 V

≤ +4.0 V,

CM

–40°C ≤ T

R

= 2 kΩ 30 V/mV

L

= 10 kΩ 50 200 V/mV

R

L

–40°C ≤ T

≤ +125°C 70 100 dB

A

≤ +125°C 25 V/mV

A

Bias Current Drift ∆IB/∆T 500 pA/°C

OUTPUT CHARACTERISTICS

Output Voltage Swing High V

Output Voltage Swing Low V

Short Circuit Current I
Maximum Output Current I

OH

OL

SC

OUT

I

= 250 µA

L

–40°C ≤ T

= 5 mA +4.80 V

I

L

I

= 250 µA

L

–40°C ≤ T

= 5 mA –4.80 V

I

L

≤ +125°C +4.90 V

A

≤ +125°C –4.90 V

A

Short to Ground, Instantaneous ±70 mA

±25 mA

POWER SUPPLY

Power Supply Rejection Ratio PSRR V

Supply Current/Amplifier I

SY

= ±1.5 V to ±6 V,

S

–40°C ≤ T

V

OUT

≤ +125°C 60 100 dB

A

= 0 V 600 1,200 µA

–40°C ≤ TA ≤ +125°C 1,400 µA

DYNAMIC PERFORMANCE

Slew Rate SR –4 V < V
Settling Time t

S

To 0.01% 1,000 ns

< +4 V, R

OUT

= 10 kΩ 2.9 V/µs

L

Gain Bandwidth Product GBP 8 MHz

Phase Margin φ

m

60 Degrees

NOISE PERFORMANCE

Voltage Noise Density e
Current Noise Density i

Specifications subject to change without notice.

n

n

f = 1 kHz 7 nV/√Hz
f = 1 kHz 0.4 pA/√Hz

–5–REV. A

AD8519/AD8529

WARNING!

ESD SENSITIVE DEVICE

ABSOLUTE MAXIMUM RATINGS

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±6 V

Input Voltage
Differential Input Voltage

2

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±6 V

3

. . . . . . . . . . . . . . . . . . . . . . ±0.6 V

Internal Power Dissipation

SOT-23 (RT) . . . . . . . . . . . . . . . . . Observe Derating Curve

SOIC (R) . . . . . . . . . . . . . . . . . . . . Observe Derating Curve

µSOIC (RM) . . . . . . . . . . . . . . . . . Observe Derating Curve

Output Short-Circuit Duration . . . . . Observe Derating Curve

Storage Temperature Range

RT, S Packages . . . . . . . . . . . . . . . . . . . . –65°C to +150°C

Operating Temperature Range

AD8519, AD8529 . . . . . . . . . . . . . . . . . . –40°C to +125°C

Junction Temperature Range

RT, S Packages . . . . . . . . . . . . . . . . . . . . –65°C to +150°C

Lead Temperature Range (Soldering, 60 sec) . . . . . . . +300°C

NOTES

1

Stresses above those listed under Absolute Maximum Ratings may cause perma-

nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute maximum rating condi­tions for extended periods may affect device reliability.

2

For supply voltages less than ±6 V the input voltage is limited to less than or equal

to the supply voltage.

3

For differential input voltages greater than ±0.6 V the input current should be limited

to less than 5 mA to prevent degradation or destruction of the input devices.

1

Package Type ␪

1

JA

␪

JC

Units

5-Lead SOT-23 (RT) 230 146 °C/W
8-Lead SOIC (R) 158 43 °C/W
8-Lead µSOIC (RM) 210 45 °C/W

NOTE

1

θJA is specified for worst case conditions, i.e., θ

in circuit board for SOT-23 and SOIC packages.

is specified for device soldered

JA

ORDERING GUIDE

Temperature Package Package

Model Range Description Option

AD8519ART

1

–40°C to +125°C 5-Lead SOT-23 RT-5
AD8519AR –40°C to +125°C 8-Lead SOIC SO-8
AD8529AR –40°C to +125°C 8-Lead SOIC SO-8

AD8529ARM

NOTES

1

Available in 3,000 piece reels only.

2

Available in 2,500 piece reels only.

2

–40°C to +125°C 8-Lead µSOIC RM-8

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD8519/AD8529 features proprietary ESD protection circuitry, permanent dam­age may occur on devices subjected to high energy electrostatic discharges. Therefore, proper
ESD precautions are recommended to avoid performance degradation or loss of functionality.

–6– REV. A

Typical Characteristics –

TEMPERATURE – 8C

SUPPLY CURRENT – mA

800

700

300

250 225

150

0 255075100125

600

500

400

VS = +10V

VS = +5V

VS = +2.7V, +3.0V

GAIN – dB

45

90

135

180

PHASE SHIFT – Degrees

FREQUENCY – Hz

230

100k

10

VS = +5V
T

A

= +258C

220

210

0

20

30

40

50

225

270

1M 10M 100M

GAIN

PHASE

FREQUENCY – Hz

PSRR – dB

1k 10k 10M100k 1M

0

VS = +5V
T

A

= +258C

10

20

30

40

50

60

70

80

90

+PSRR

2PSRR

AD8519/AD8529

60

VS = +5V

= +258C

T

A

50

40

30

20

QUANTITY AMPLIFIERS

10

0

21 20.6120.2

INPUT OFFSET VOLTAGE – mV

COUNT = 395 OP AMPS

0.2 0.6

Figure 1. Input Offset Voltage
Distribution

40

VS = +5V

0

T

= +258C

A

240

280

2120

2160

INPUT BIAS CURRENT – nA

2200

2240

01 5

COMMON-MODE VOLTAGE – Volts

234

Figure 4. Input Bias Current vs.
Common-Mode Voltage

600

550

500

SUPPLY CURRENT – mA

450

0

46810

212

SUPPLY VOLTAGE – Volts

Figure 2. Supply Current per
Amplifier vs. Supply Voltage

120

VS = +5V

100

80

60

40

COMMON MODE REJECTION – dB

20

01 5

COMMON-MODE VOLTAGE – Volts

23 4

Figure 5. Common-Mode Rejection
vs. Common-Mode Voltage

Figure 3. Supply Current per
Amplifier vs. Temperature

Figure 6. Open Loop Gain, Phase vs.
Frequency

60

40

20

0

220

CLOSED LOOP GAIN – dB

240

10k 100k 100M1M 10M

Figure 7. Closed Loop Gain vs.
Frequency

FREQUENCY – Hz

VS = +5V
R

= 830V

L

T

= +258C

A

CL 5pF

110

100

90
80
70

60

CMRR – dB

50
40

30
20

1k 10k 10M100k 1M

FREQUENCY – Hz

VS = +5V
T

= +258C

A

Figure 8. CMRR vs. Frequency

–7–REV. A

Figure 9. PSRR vs. Frequency

AD8519/AD8529

FREQUENCY – Hz

MAXIMUM OUTPUT SWING – V p-p

10k 100k 1M 10M

4

5

0

3

2

VS = +5V
AVCC = 1
R

L

= 10kV

T

A

= +258C

CL = 15pF

1

DISTORTION < 1%

FREQUENCY – Hz

10 100

1k 10k

0

VS = +5V
T

A

= +258C

1

2

3

4

5

6

7

8

CURRENT NOISE DENSITY – pA/ Hz

20mV

500ns

VS = 62.5V
AVCC = 1
T

A

= +258C

C

L

= 100pF

R

L

= 10kV

60

VS = +5V
V

= +2.5V

CM

50

= 10kV

R

L

T

= +258C

A

V

= 650mV

40

IN

30

20

OVERSHOOT – %

10

+OS

0

10 100 1k

CAPACITANCE – pF

2OS

Figure 10. Overshoot vs. Capacitance
Load

300

VS = +5V
T

= +258C

A

250

200

AVCC = 10

150

100

OUTPUT IMPEDANCE – V

50

0

100k 1M 10M

FREQUENCY – Hz

AVCC = 1

Figure 13. Output Impedance vs.
Frequency

4

VS = +5V

3

T

= +258C

A

1

0

21

STEP SIZE – V

22

23

24

0 2.0

1%

0.1%

0.1%

1%

1.0

SETTLING TIME – ms

Figure 11. Settling Time vs. Step Size

80

VS = +5V

70

T

= +258C

A

60

50

40

30

20

10

VOLTAGE NOISE DENSITY – nV/ Hz

0

10 100

FREQUENCY – Hz

1k 10k

Figure 14. AD8519 Voltage Noise
Density

Figure 12. Output Swing vs.
Frequency

Figure 15. AD8519 Current Noise
Density

20mV

Figure 16. 0.1 Hz to 10 Hz Noise

VS = 62.5V
A

= 100kV

V

en = 0.4mV p-p

1s

VS = 62.5V
V

= +6V p-p

IN

A

= 1

V

1V

20ms

Figure 17. No Phase Reversal

–8– REV. A

Figure 18. Small Signal Transient
Response

VS = 62.5V

AD8519

D1

1N914

R6
5kV

R1

10kV

V

IN

R4

10kV

R2

10kV

D2

1N914

R3

4.99kV

R5

10kV

V

OUT

R7

3.32kV

AD8519

U2

U1

VIRTUAL GROUND =

V

CC

2

NODE A

AVCC = 1
T

= +258C

A

CL = 100pF

AD8519/AD8529

500mV

Figure 19. Large Signal Transient Response

APPLICATIONS INFORMATION
Maximum Power Dissipation

The maximum power that can be safely dissipated by the AD8519/
AD8529 is limited by the associated rise in junction temperature.

The maximum safe junction temperature is +150°C for these

plastic packages. If this maximum is momentarily exceeded, proper
circuit operation will be restored as soon as the die temperature is
reduced. Operating the product in the “overheated” condition for
an extended period can result in permanent damage to the device.

Precision Full-Wave Rectifier

Slew Rate is probably the most underestimated parameter when
designing a precision rectifier. Yet without a good slew rate
large glitches will be generated during the period when both
diodes are off.

Let’s examine the operation of the basic circuit before consider­ing slew rate further, U1 is set up to have two states of opera­tion. D1 and D2 diodes switch the output between the two
states. State one is as an inverter with a gain of 1 and state two
is a simple unity gain buffer where the output is equal to the
value of the virtual ground. The virtual ground is the potential
present at the noninverting node of the U1. State one is active
when V
condition. If V

is larger than the virtual ground. D2 is on in this

IN

drops below virtual ground, D2 turns off and

IN

D1 turns on. This causes the output of U1 to simply buffer the
virtual ground and this configuration is state two. So, the func­tion of U1, which results from these two states of operation, is a
half-wave inverter. The U2 function takes the inverted half-wave
at a gain of two and sums it into the original V
outputs a rectified full-wave.

VV V

=− <

OUT IN IN

50ms

wave, which

IN

−

1

20

Figure 20. Precision Full-Wave Rectifier

This type of rectifier can be very precise if the following electri­cal parameters are adhered to: First, all passive components
should be of tight tolerance, 1% resistors and 5% capacitors.
Second, if the application circuit requires high impedance (i.e.,
direct sensor interface), then an FET amplifier is probably a
better choice than the AD8519. Third, an amp such as the
AD8519, which has a great slew rate specification, will yield the
best result, because the circuit involves switching. Switching
glitches are caused when D1 and D2 are both momentarily off.
This condition occurs every time the input signal is equal to the
virtual ground potential. When this condition occurs the U1
stage is taken out of the V

ⴛ R5 ⴛ (R4储R1+R2+R3). Please note: node A should be

V

IN

inverted or virtual ground, but in this condition node A is a

V

IN

simply tracking V

. Given a sine wave input centered around

IN

equation and V

OUT

is equal to

OUT

virtual ground glitches are generated at the sharp negative peaks
of the rectified sine wave. If the glitches are hard to notice on an
oscilloscope, then raise the frequency of the sine wave till they
become apparent. The size of the glitches are proportional to
the input frequency, the diode turn-on potential (+0.2 V or
+0.65 V) and the slew rate of the op amp.

R6 and R7 are both necessary to limit the amount of bias cur­rent related voltage offset. Unfortunately, there is no “perfect”
value for R6 because the impedance at the inverting node is
altered as D1 and D2 switch. Therefore, there will also be some
unresolved bias current related offset. To minimize this offset,
use lower value resistors or choose an FET amplifier if the opti­mized offset is still intolerable.

The AD8519 offers a unique combination of speed vs. power
ratio at +2.7 V single supply, small size (SOT-23), and low
noise that make it an ideal choice for most high volume and
high precision rectifier circuits.

10ⴛ Microphone Preamp, Meets PC99 Specifications

This circuit, while lacking a unique topology, is anything but
featureless when an AD8519 is used as the op amp. This preamp
gives 20 dB gain over a frequency range of 20 Hz to 20 kHz and is
fully PC99 compliant in all parameters including THD+N, dy­namic range, frequency range, amplitude range, crosstalk, etc.
Not only does this preamp comply with the PC99 spec it far sur­passes it. In fact, this preamp has a V

noise of around

OUT

100 dB, which is suitable for most professional 20-bit audio
systems. Referred to input noise is 120 dB. At 120 dB THD+N
in unity gain the AD8519 is suitable for all 24-bit professional
audio systems available today. In other words, the AD8519 will
not be the limiting performance factor in your audio system de­spite its small size and low cost.

–9–REV. A

AD8519/AD8529

R

R R

R

AD8519

R

F

+2.7V

R

F

Slew-rate-related distortion would not be present at the lower

voltages because the AD8519 is so fast at 2.1 V/µs. A general rule

of thumb for determining the necessary slew rate for an audio
system is: Take the maximum output voltage range of the device
given the design’s power rails and divide by two. In our example in
Figure 21, the power rails are +2.7 V and the output is rail-to-rail:
enter those numbers into the equation 2.7/2 is +1.35 V, and our

minimum ideal slew rate is 1.35 V/µs.

While this data sheet gives only one audio example, many audio
circuits are enhanced with the use of the AD8519. Here are just a
few examples, Active audio filters like bass, treble and equalizers,
PWM filters at the output of audio DACs, Buffers and Summers
for mixing stations, and Gain stages for volume control.

240pF

MIC

+2.7V

1kV

IN

1nF
NPO

C1

1mF

3.09kV

46.4kV 93.1kV

30.9kV

+2.7V

AD8519

10mF-ELECT

+2.7V

CODEC LINE IN
OR MIC IN

48kV

Figure 22 is a schematic of a two-element varying bridge. This
configuration is commonly found in pressure and flow transduc­ers. With two-elements varying the signal will be 2⫻ as com­pared to a single-element varying bridge. The advantages of this
type of bridge are gain setting range, no signal input equals 0 V
out, and single supply application. Negative characteristics are
nonlinear operation and required R matching. Given these sets
of conditions, requirements and characteristics, the AD8519 can
be successfully used in this configuration because of its rail-to­rail output and low offset. Perhaps the greatest benefits of the
AD8519, when used in the bridge configuration, are the advan­tages it can bring when placed in a remote bridge sensor. For
example: the tiny SOT-23 package will reduce the overall sensor
package, low power allows for remote powering via batteries or
solar cells, high output current drive to drive a long cable, and
+2.7 V operation for two cell operation.

Figure 21. 10⫻ Microphone Preamplifier

Two-Element Varying Bridge Amplifier

There are a host of bridge configurations available to designers.
For a complete look the ubiquitous bridge, its positives and
negatives, and its many different forms, please refer to ADI’s
1992 Amplifier Applications Guide

1. Adolfo Garcia and James Wong, Chapter 2, 1992 Amplifier Applications Guide.

1

.

Figure 22. Two-Element Varying Bridge Amplifier

–10– REV. A

AD8519/AD8529

* AD8519/AD8529 SPICE Macro-model
* 10/98, Ver. 1
* TAM / ADSC
*
* Copyright 1998 by Analog Devices
*
* Refer to “README.DOC” file for License State­* ment. Use of this model
* indicates your acceptance of the terms and
* provisions in the License
* Statement.
*
* Node Assignments
* noninverting input
* | inverting input
* | | positive supply
* | | | negative supply
* ||||output
* |||||
* |||||
.SUBCKT AD8519 1 2 99 50 45
*
*INPUT STAGE
*
Q1 5 7 15 PIX
Q2 6 2 15 PIX
IOS 1 2 1.25E-9
I1 99 15 200E-6
EOS 7 1 POLY(2) (14,98) (73,98) 1E-3 1 1
RC1 5 50 2E3
RC2 6 50 2E3
C1 5 6 1.3E-12
D1 15 8 DX
V1 99 8 DC 0.9
*
* INTERNAL VOLTAGE REFERENCE
*
EREF 98 0 POLY(2) (99,0) (50,0) 0 .5 .5
ISY 99 50 300E-6
*
* CMRR=100dB, ZERO AT 1kHz
*
ECM 13 98 POLY(2) (1,98) (2,98) 0 0.5 0.5
RCM1 13 14 1E6
RCM2 14 98 10
CCM1 13 14 240E-12
*
* PSRR=100dB, ZERO AT 200Hz
*
RPS1 70 0 1E6
RPS2 71 0 1E6
CPS1 99 70 1E-5
CPS2 50 71 1E-5
EPSY 98 72 POLY(2) (70,0) (0,71) 0 1 1
RPS3 72 73 1.59E6
CPS3 72 73 500E-12
RPS4 73 98 15.9
*
* POLE AT 20MHz, ZERO AT 60MHz
*
G1 21 98 (5,6) 5.88E-6

R1 21 98 170E3
R2 21 22 85E3
C2 22 98 40E-15
*
* GAIN STAGE
*
G2 25 98 (21,98) 37.5E-6
R5 25 98 1E7
CF 45 25 5E-12
D3 25 99 DX
D4 50 25 DX
*
* OUTPUT STAGE
*
Q3 45 41 99 POUT
Q4 45 43 50 NOUT
EB1 99 40 POLY(1) (98,25) 0.594 1
EB2 42 50 POLY(1) (25,98) 0.594 1
RB1 40 41 500
RB2 42 43 500
*
* MODELS
*
.MODEL PIX PNP (BF=500,IS=1E-14,KF=5E-6)
.MODEL POUT PNP (BF=100,IS=1E-14,BR=0.517)
.MODEL NOUT NPN (BF=100,IS=1E-14,BR=0.413)
.MODEL DX D(IS=1E-14,CJO=1E-15)
.ENDS AD8519

–11–REV. A

AD8519/AD8529

8

5

4

1

0.122 (3.10)

0.114 (2.90)

0.199 (5.05)

0.187 (4.75)

PIN 1

0.0256 (0.65) BSC

0.122 (3.10)

0.114 (2.90)

SEATING

PLANE

0.006 (0.15)

0.002 (0.05)

0.018 (0.46)

0.008 (0.20)

0.043 (1.09)

0.037 (0.94)

0.120 (3.05)

0.112 (2.84)

0.011 (0.28)

0.003 (0.08)

0.028 (0.71)

0.016 (0.41)

33°
27°

0.120 (3.05)

0.112 (2.84)

OUTLINE DIMENSIONS

Dimensions shown in inches and (mm).

0.1574 (4.00)

0.1497 (3.80)

PIN 1

0.0098 (0.25)

0.0040 (0.10)

SEATING

PLANE

8-Lead Narrow Body SOIC

(SO-8)

0.1968 (5.00)

0.1890 (4.80)

85

0.0500
(1.27)

BSC

0.2440 (6.20)

41

0.2284 (5.80)

0.0688 (1.75)

0.0532 (1.35)

0.0192 (0.49)

0.0138 (0.35)

0.0098 (0.25)

0.0075 (0.19)

0.0196 (0.50)

0.0099 (0.25)

88
08

0.0500 (1.27)

0.0160 (0.41)

x 458

0.1220 (3.100)

0.1063 (2.700)

8-Lead ␮SOIC

(RM-8)

C3454a–8–12/98

5-Lead SOT-23

(RT-5)

PIN 1

0.0709 (1.800)

0.0590 (1.500)

0.0512 (1.300)

0.0354 (0.900)

1 3

2

4 5

0.0748 (1.900)
REF

0.0590 (0.150)

0.0000 (0.000)
NOTE:

PACKAGE OUTLINE INCLUSIVE AS SOLDER PLATING.

0.0197 (0.500)

0.0118 (0.300)

0.1181 (3.000)

0.0984 (2.500)

0.0374 (0.950) REF

0.0571 (1.450)

0.0354 (0.900)

SEATING
PLANE

–12–

108

08

0.0079 (0.200)

0.0035 (0.090)

0.0236 (0.600)

0.0039 (0.100)

PRINTED IN U.S.A.

REV. A