Datasheet AD8221 Datasheet (Analog Devices)

Page 1
+
Precision Instrumentation Amplifier

FEATURES

Available in space-saving MSOP package Gain set with 1 external resistor (gain range 1 to 1000)
Wide power supply range: ±2.3 V to ±18 V Temperature range for specified performance:
–40°C to +85°C Operational up to 125°C EXCELLENT AC SPECIFICATONS
80 dB min CMRR to 10 kHz ( G = 1) 825 kHz –3 dB bandwidth (G = 1) 2 V/µs slew rate
LOW NOISE
8 nV/√Hz, @ 1 kHz, max input voltage noise
0.25 µV p-p input noise (0.1 Hz to 10 Hz)
HIGH ACCURACY DC PERFORMANCE (AD8221BR)
90 dB min CMRR (G = 1) 25 µV max input offset voltage
0.3 µV/°C max input offset drift
0.4 nA max input bias current

APPLICATIONS

Weigh scales Industrial process controls Bridge amplifiers Precision data acquisition systems Medical instrumentation Strain gages Transducer interfaces

GENERAL DESCRIPTION

The AD8221 is a gain programmable, high performance instru­mentation amplifier that delivers the industry’s highest CMRR over frequency. The CMRR of instrumentation amplifiers on the market today falls off at 200 Hz. In contrast, the AD8221 maintains a minimum CMRR of 80 dB to 10 kHz for all grades at G = 1. High CMRR over frequency allows the AD8221 to reject wideband interference and line harmonics, greatly simplifying filter requirements. Possible applications include precision data acquisition, biomedical analysis, and aerospace instrumentation.
Low voltage offset, low offset drift, low gain drift, high gain accuracy, and high CMRR make this part an excellent choice in applications that demand the best dc performance possible, such as bridge signal conditioning.
1
AD8221

CONNECTION DIAGRAM

1
–IN
2
R
G
3
R
G
4
IN
AD8221
TOP VIEW
Figure 1. SOIC and MSOP Connection Diagram
120
110
100
90
80
CMRR (dB)
70
60
50
40
10010 1k 10k 100k
FREQUENCY (Hz)
Figure 2. Typical CMRR vs. Frequency for G = 1
Programmable gain affords the user design flexibility. A single resistor sets the gain from 1 to 1000. The AD8221 operates on both single and dual supplies, and is well suited for applications where ±10 V input voltages are encountered.
The AD8221 is available in low cost 8-lead SOIC and MSOP packages, both of which offer the industry’s best performance. The MSOP requires half the board space of the SOIC, making it ideal for multichannel or space-constrained applications.
Performance is specified over the entire industrial temperature range of –40°C to +85°C for all grades. Furthermore, the AD8221 is operational from –40°C to +125°C
1
See Typical Performance Curves for expected operation from 85°C to 125°C.
8
+V
S
7
V
OUT
6
REF
5
–V
S
AD8221
COMPETITOR 1
COMPETITOR 2
03149-0-001
1
.
03149-0-002
Rev. A
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 www.analog.com Fax: 781.326.8703 © 2003 Analog Devices, Inc. All rights reserved.
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AD8221
TABLE OF CONTENTS
Specifications..................................................................................... 3
Absolute Maximum Ratings............................................................ 5
ESD Caution.................................................................................. 5
Typical Performance Characteristics............................................. 6
Theory of Operation ......................................................................13
Gain Selection............................................................................. 14
Layout........................................................................................... 14
Reference Terminal ....................................................................15
Power Supply Regulation and Bypassing ................................15
Input Bias Current Return Path................................................15
Input Protection ......................................................................... 15
RF Interference........................................................................... 16
Precision Strain Gage................................................................. 16
Conditioning ±10 V Signals for a +5 V Differential Input
ADC ............................................................................................. 17
AC-Coupled Instrumentation Amplifier ................................ 17
Outline Dimensions....................................................................... 18
Ordering Guide .......................................................................... 18
REVISION HISTORY
Revision A 11/03—Data Sheet Changed from Rev. 0 to Rev. A
Change Page
Changes to Features...............................................................................1
Changes to Specifications section .......................................................4
Change to Theory of Operation section...........................................13
Change to Gain Selection section......................................................14
Rev. A | Page 2 of 20
Page 3
AD8221

SPECIFICATIONS

Table 1. VS = ±15 V, V
Parameter Conditions Min Typ Max Min Typ Max Min Typ Max Unit
COMMON-MODE REJECTION RATIO (CMRR)
CMRR DC to 60 Hz with 1 kΩ Source Imbalance
G = 1 80 90 80 dB G = 10 100 110 100 dB G = 100 120 130 120 dB G = 1000 130 140 130 dB
CMRR at 10 kHz VCM = –10 V to +10 V
G = 1 80 80 80 dB G = 10 90 100 90 dB G = 100 100 110 100 dB G = 1000 100 110 100 dB
NOISE
Voltage Noise, 1 kHz
Input Voltage Noise, eNI V Output Voltage Noise, eNO 75 75 75 nV/√Hz
RTI f = 0.1 Hz to 10 Hz
G = 1 2 2 2 µV p-p G = 10 0.5 0.5 0.5 µV p-p G = 100 to 1000 0.25 0.25 0.25 µV p-p
Current Noise f = 1 kHz 40 40 40 fA/√Hz
f = 0.1 Hz to 10 Hz 6 6 6 pA p-p
VOLTAGE OFFSET1
Input Offset, V
V
OSI
Over Temperature T = –40°C to +85°C 86 45 135 µV Average TC 0.4 0.3 0.9 µV/°C
Output Offset, V
OSO
Over Temperature T = –40°C to +85°C 0.66 0.45 1.00 mV Average TC 6 5 9 µV/°C
Offset RTI vs. Supply (PSR) VS = ±2.3 V to ±18 V
G = 1 90 110 94 110 90 100 dB G = 10 110 120 114 130 100 120 dB G = 100 124 130 130 140 120 140 dB G = 1000 130 140 140 150 120 140 dB
INPUT CURRENT
Input Bias Current 0.5 1.5 0.2 0.4 0.5 2 nA
Over Temperature T = –40°C to +85°C 2.0 1 3 nA Average TC 1 1 3 pA/°C
Input Offset Current 0.2 0.6 0.1 0.4 0.3 1 nA
Over Temperature T = –40°C to +85°C 0.8 0.6 1.5 nA Average TC 1 1 3 pA/°C
REFERENCE INPUT
RIN 20 20 20 kΩ IIN V Voltage Range –VS +VS –VS +VS –VS +VS V Gain to Output
POWER SUPPLY
Operating Range VS = ±2.3 V to ±18 V ±2.3 ±18 ±2.3 ±18 ±2.3 ±18 V Quiescent Current 0.9 1 0.9 1 0.9 1 mA
Over Temperature T = –40°C to +85°C 1 1.2 1 1.2 1 1.2 mA
= 0 V, TA = +25°C, G = 1, RL = 2 kΩ, unless otherwise noted
REF
AR Grade BR Grade ARM Grade
VCM = –10 V to +10 V
RTI noi se =
, V
IN+
= ±5 V to ±15 V 60 25 70 µV
S
V
= ±5 V to ±15 V 300 200 600 µV
S
, V
IN+
e
NI
, V
= 0 8 8 8 nV/√Hz
IN–
REF
, V
= 0 50 60 50 60 50 60 µA
IN–
REF
2
+ (eNO/G)
2
1 ± 0.0001 1 ± 0.0001 1 ± 0.0001
V/V
Rev. A | Page 3 of 20
Page 4
AD8221
AR Grade BR Grade ARM Grade
Parameter Conditions Min Typ Max Min Typ Max Min Typ Max Unit
DYNAMIC RESPONSE
Small Signal –3 dB
Bandwidth G = 1 825 825 825 kHz G = 10 562 562 562 kHz G = 100 100 100 100 kHz G = 1000 14.7 14.7 14.7 kHz
Settling Time 0.01% 10 V Step
G = 1 to 100 10 10 10 µs G = 1000 80 80 80 µs
Settling Time 0.001% 10 V Step
G = 1 to 100 13 13 13 µs G = 1000 110 110 110 µs
Slew Rate G = 1 1.5 2 1.5 2 1.5 2 V/µs G = 5–100 2 2.5 2 2.5 2 2.5 V/µs GAIN G = 1 + (49.4 kΩ/RG)
Gain Range 1 1000 1 1000 1 1000 V/V
Gain Error V
G = 1 0.03 0.02 0.1 % G = 10 0.3 0.15 0.3 % G = 100 0.3 0.15 0.3 % G = 1000 0.3 0.15 0.3 %
Gain Nonlinearity V
G = 1 to 10 RL = 10 kΩ 3 10 3 10 5 15 ppm G = 100 RL = 10 kΩ 5 15 5 15 7 20 ppm G = 1000 RL = 10 kΩ 10 40 10 40 10 50 ppm G = 1 to 100 RL = 2 kΩ 10 95 10 95 15 100 ppm
Gain vs. Temperature
G = 1 3 10 2 5 3 10 ppm/°C
2
G > 1
INPUT
Input Impedance
Differential 100||2 100||2 100||2 GΩ||pF Common Mode 100||2 100||2 100||2 GΩ||pF
Input Operating
Voltage Range
3
Over Temperature T = –40°C to +85°C –VS + 2.0 +VS – 1.2 –VS + 2.0 +VS – 1.2 –VS + 2.0 +VS – 1.2 V
Input Operating
Voltage Range
Over Temperature T = –40°C to +85°C –VS + 2.0 +VS – 1.2 –VS + 2.0 +VS – 1.2 –VS + 2.0 +VS – 1.2 V
OUTPUT RL = 10 kΩ
Output Swing VS = ±2.3 V to ±5 V –VS + 1.1 +VS – 1.2 –VS + 1.1 +VS – 1.2 –VS + 1.1 +VS – 1.2 V
Over Temperature T = –40°C to +85°C –VS + 1.4 +Vs – 1.3 –VS + 1.4 +Vs – 1.3 –VS + 1.4 +Vs – 1.3 V
Output Swing VS = ±5 V to ±18 V –VS + 1.2 +VS – 1.4 –VS + 1.2 +VS – 1.4 –VS + 1.2 +VS – 1.4 V
Over Temperature T = –40°C to +85°C –VS + 1.6 +VS – 1.5 –VS + 1.6 +VS – 1.5 –VS + 1.6 +VS – 1.5 V
Short-Circuit Current 18 18 18 mA TEMPERATURE RANGE
Specified Performance –40 +85 –40 +85 –40 +85 °C
Operational
4
1
Total RTI VOS = (V
2
Does not include the effects of external resistor RG.
3
One input grounded. G = 1.
4
See Typical Performance Curves for expected operation between 85°C to 125°C.
OSI
) + (V
±10 V
OUT
= –10 V to +10 V
OUT
–50 –50 –50 ppm/°C
VS = ±2.3 V to ±5 V –VS + 1.9 +VS – 1.1 –VS + 1.9 +VS – 1.1 –VS + 1.9 +VS – 1.1 V
VS = ±5 V to ±18 V –VS + 1.9 +VS – 1.2 –VS + 1.9 +VS – 1.2 –VS + 1.9 +VS – 1.2 V
–40 +125 –40 +125 –40 +125 °C
/G).
OSO
Rev. A | Page 4 of 20
Page 5
AD8221

ABSOLUTE MAXIMUM RATINGS

Table 2. AD8221 Absolute Maximum Ratings
Parameter Rating
Supply Voltage ±18 V Internal Power Dissipation 200 mW Output Short Circuit Current Indefinite Input Voltage (Common-Mode) ±V Differential Input Voltage ±Vs Storage Temperature –65°C to +150°C Operational* Temperature Range –40°C to +125°C
*Temperature range for specified performance is –40°C to +85°C. See Typical
Performance Curves for expected operation from +85°C to +125°C.
S

ESD CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumu­late on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recom­mended to avoid performance degradation or loss of functionality.
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions may affect device reliability.
Specification is for device in free air:
SOIC θ MSOP θ
(4 Layer JEDEC Board) = 121°C/W.
JA
(4 Layer JEDEC Board) = 135°C/W.
JA
Rev. A | Page 5 of 20
Page 6
AD8221

TYPICAL PERFORMANCE CHARACTERISTICS

(@+25°C, VS = ±15 V, RL = 10 kΩ, unless otherwise noted.)
1600
3500
1400
1200
1000
800
UNITS
600
400
200
2400
2100
1800
1500
1200
UNITS
900
600
300
0
0–50–100–150 50 100 150
CMR (µV/V)
Figure 3. Typical Distribution for CMR (G = 1)
03149-0-003
3000
2500
2000
UNITS
1500
1000
500
0
INPUT OFFSET CURRENT (nA)
0–0.3–0.6–0.9 0.3 0.6 0.9
Figure 6. Typical Distribution of Input Offset Current
15
10
5
0
–5
–10
INPUT COMMON-MODE VOLTAGE (V)
VS = ±5V
VS = ±15V
03149-0-006
0
INPUT OFFSET VOLTAGE (µV)
0–20–4060 204060
Figure 4. Typical Distribution of Input Offset Voltage
3000
2500
2000
1500
UNITS
1000
500
0
INPUT BIAS CURRENT (nA)
0–0.5–1.0–1.5 0.5 1.0 1.5
Figure 5. Typical Distribution of Input Bias Current
03149-0-004
03149-0-005
Rev. A | Page 6 of 20
–15
–5 0–15 –10 5 10 15 OUTPUT VOLTAGE (V)
Figure 7. Input Common-Mode Range vs. Output Voltage, G = 1
15
10
VS = ±15V
5
0
–5
–10
INPUT COMMON-MODE VOLTAGE (V)
–15
–5 0–15 –10 5 10 15
OUTPUT VOLTAGE (V)
VS = ±5V
Figure 8. Input Common-Mode Range vs. Output Voltage, G = 100
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03149-0-008
Page 7
AD8221
0.80
180
0.75
0.70
0.65
0.60
0.55
0.50
INPUT BIAS CURRENT (nA)
0.45
0.40
2.00
1.75
1.50
1.25
1.00
0.75
VS = ±15V
VS = ±5V
–5 0–15 –10 5 10 15
COMMON-MODE VOLTAGE (V)
Figure 9. I
vs. CMV
BIAS
03149-0-009
160
GAIN = 1000
140
GAIN = 100
120
GAIN = 10
100
GAIN = 1
PSRR (dB)
80
60
40
20
0.1 1 10 100 1k 10k 100k 1M FREQUENCY (Hz)
GAIN = 1000
Figure 12. Positive PSRR vs. Frequency, RTI (G = 1 to 1000)
180
160
GAIN = 1000
140
GAIN = 100
120
GAIN = 10
100
GAIN = 1
PSRR (dB)
80
03149-0-012
0.50
0.25
CHANGE IN INPUT OFFSET VOLTAGE (µV)
0
0.10.01 1 10 WARM-UP TIME (min)
Figure 10. Change in Input Offset Voltage vs. Warm-Up Time
5.0
4.0
3.0
2.0
1.0 INPUT OFFSET CURRENT
0
–1.0
INPUT CURRENT (nA)
–2.0
–3.0
–4.0
–5.0
–40 –20 0 20 40 60 80 100 120 140
VS = ±15V
INPUT BIAS CURRENT
TEMPERATURE (°C)
Figure 11. Input Bias Current and Offset Current vs. Temperature
03149-0-010
03149-0-011
60
40
20
0.1 1 10 100 1k 10k 100k 1M FREQUENCY (Hz)
Figure 13. Negative PSRR vs. Frequency, RTI (G = 1 to 1000)
100k
10k
BEST AVAILABLE FET INPUT IN-AMP GAIN = 1
1k
100
TOTAL DRIFT 25°C– 85°C RTI (µV)
10
BEST AVAILABLE FET
INPUT IN-AMP GAIN = 1000
AD8221 GAIN = 1
AD8221 GAIN = 1000
1k 10k10 100 100k 1M 10M
SOURCE RESISTANCE ()
Figure 14. Total Drift vs. Source Resistance
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03149-0-014
Rev. A | Page 7 of 20
Page 8
AD8221
70
GAIN = 1000
60
50
GAIN = 100
40
30
GAIN = 10
20
GAIN (dB)
10
GAIN = 1
0
–10
–20 –30
100 1k 10k 100k 1M 10M
FREQUENCY (Hz)
Figure 15. Gain vs. Frequency
160
GAIN = 1000
140
GAIN = 100
120
GAIN = 10
100
GAIN = 1
CMRR (dB)
80
60
40
0.1 1 10 100 1k 10k 100k 1M FREQUENCY (Hz)
Figure 16. CMRR vs. Frequency, RTI
GAIN = 10
GAIN = 100
GAIN = 1000
03149-0-015
03149-0-016
100
80
60
40
20
0
CMR (µV/V)
–20
–40
–60
–80
–100
–40 –20 0 20 40 60 80 100 120 140
TEMPERATURE (°C)
03149-0-041
Figure 18. CMR vs. Temperature
–0.0
+V
S
–0.4 –0.8 –1.2 –1.6 –2.0 –2.4
+2.4 +2.0 +1.6
INPUT VOLTAGE LIMIT (V)
+1.2
REFERRED TO SUPPLY VOLTAGES
+0.8 +0.4
–VS+0.0
501015
± SUPPLY VOLTAGE (V)
20
03149-0-018
Figure 19. Input Voltage Limit vs. Supply Voltage, G = 1
160
GAIN = 1000 GAIN = 100
140
GAIN = 10
120
GAIN = 1
100
CMRR (dB)
80
60
40
0.1 1 10 100 1k 10k 100k 1M FREQUENCY (Hz)
GAIN = 100
GAIN = 1000
GAIN = 10
Figure 17. CMRR vs. Frequency, RTI, 1 kΩ Source Imbalance
+V
–VS+0.0
03149-0-017
Rev. A | Page 8 of 20
–0.0
S
–0.4 –0.8 –1.2 –1.6 –2.0
+2.0 +1.6 +1.2
OUTPUT VOLTAGE SWING (V)
+0.8
REFERRED TO SUPPLY VOLTAGES
+0.4
501015
± SUPPLY VOLTAGE (V)
RL = 10k
RL = 2k
RL = 2k
RL = 10k
Figure 20. Output Voltage Swing vs. Supply Voltage, G = 1
20
03149-0-019
Page 9
AD8221
30
VS = ±15V
20
VS = ±15V
10
OUTPUT VOLTAGE SWING (V p-p)
0
101 100 1k 10k
LOAD RESISTANCE ()
Figure 21. Output Voltage Swing vs. Load Resistance
+V
–0
S
–1
–2
–3
+3
+2
OUTPUT VOLTAGE SWING (V)
REFERRED TO SUPPLY VOLTAGES
+1
–VS+0
0123456789101112
OUTPUT CURRENT (mA)
SOURCING
SINKING
Figure 22. Output Voltage Swing vs. Output Current, G = 1
V
S
= ±15V
03149-0-020
03149-0-021
ERROR (10ppm/DIV)
10–8–6–4–2 0 2 4 6 810
Figure 24. Gain Nonlinearity, G = 100, R
OUTPUT VOLTAGE (V)
= 10 kΩ
L
VS = ±15V
ERROR (100ppm/DIV)
10–8–6–4–2 0 2 4 6 810
Figure 25. Gain Nonlinearity, G = 1000, R
OUTPUT VOLTAGE (V)
= 10 kΩ
L
1k
03149-0-023
03149-0-024
ERROR (1ppm/DIV)
10–8–6–4–2 0 2 4 6 810
Figure 23. Gain Nonlinearity, G = 1, R
OUTPUT VOLTAGE (V)
= 10 kΩ
L
03149-0-022
Rev. A | Page 9 of 20
GAIN = 1
100
GAIN = 10
GAIN = 100
10
VOLTAGE NOISE RTI (nV/ Hz)
GAIN = 1000
GAIN = 1000 BW LIMIT
1
1 10 100 1k 10k 100k
FREQUENCY (Hz)
Figure 26. Voltage Noise Spectral Density vs. Frequency (G = 1 to 1000)
03149-0-025
Page 10
AD8221
Figure 27. 0.1 Hz to 10 Hz RTI Voltage Noise (G = 1)
Figure 28. 0.1 Hz to 10 Hz RTI Voltage Noise (G = 1000)
1k
1s/DIV2µV/DIV
03149-0-026
1s/DIV5pA/DIV
03149-0-029
Figure 30. 0.1 Hz to 10 Hz Current Noise
30
25
20
GAIN = 1 GAIN = 10, 100, 1000
15
10
OUTPUT VOLTAGE (V p-p)
5
0
1s/DIV0.1µV/DIV
03149-0-027
1k 100k10k 1M
FREQUENCY (Hz)
VS = ±15V
03149-0-030
Figure 31. Large Signal Frequency Response
100
CURRENT NOISE (fA/ Hz)
10
101 100 1k 10k
FREQUENCY (Hz)
Figure 29. Current Noise Spectral Density vs. Frequency
03149-0-028
Figure 32. Large Signal Pulse Response and Settling Time (G = 1), 0.002%/div
Rev. A | Page 10 of 20
5V/DIV
10mV/DIV
7.9µs TO 0.01%
8.5
µ
s TO 0.001%
20µs/DIV
03149-0-031
Page 11
AD8221
5V/div
4.9µs TO 0.01%
5.6
µ
10mV/div
s TO 0.001%
20mV/DIV
20µs/div
Figure 33. Large Signal Pulse Response and Settling Time (G = 10),
0.002%/div
5V/DIV
10.3µs TO 0.01%
13.4
µ
10mV/DIV
s TO 0.001%
20µs/DIV
Figure 34. Large Signal Pulse Response and Settling Time (G = 100),
0.002%/div
03149-0-032
03149-0-033
4µs/DIV
Figure 36. Small Signal Response, G = 1, R
= 2 kΩ, CL = 100 pF
L
20mV/DIV
4µs/DIV
Figure 37. Small Signal Response, G = 10, RL = 2 kΩ, CL = 100 pF
03149-0-035
03149-0-036
5V/DIV
83µs TO 0.01% 112
µ
10mV/DIV
s TO 0.001%
20µs/DIV
Figure 35. Large Signal Pulse Response and Settling Time (G = 1000),
0.002%/div
03149-0-034
Rev. A | Page 11 of 20
20mV/DIV
Figure 38. Small Signal Response, G = 100, R
10µs/DIV
= 2 kΩ, CL = 100 pF
L
03149-0-037
Page 12
AD8221
2
20mV/DIV
Figure 39. Small Signal Response, G = 1000, RL = 2 kΩ, CL = 100 pF
15
s)
10
µ
SETTLED TO 0.001%
100µs/DIV
03149-0-038
1k
100
10
SETTLING TIME (µs)
1
1 10010 1k
SETTLED TO 0.001%
SETTLED TO 0.01%
GAIN
Figure 41. Settling Time vs. Gain for a 10 V Step
03149-0-040
5
SETTLING TIME (
0
SETTLED TO 0.01%
501015
OUTPUT VOLTAGE STEP SIZE (V)
Figure 40. Settling Time vs. Step Size (G = 1)
20
03149-0-039
Rev. A | Page 12 of 20
Page 13
AD8221
+

THEORY OF OPERATION

II
V
B
A2A1
C1 C2
+V
S
400 400
–V
Q1
S
R1 24.7k 24.7k
+V
S
–V
S
R2
+V
S
R
G
–V
S
Figure 42. Simplified Schematic
The AD8221 is a monolithic instrumentation amplifier based on the classic 3-op amp topology. Input transistors Q1 and Q2 are biased at a fixed current, so that any differential input signal will force the output voltages of A1 and A2 to change accor­dingly. A signal applied to the input creates a current through
, R1, and R2, such that the outputs of A1 and A2 deliver the
R
G
correct voltage. Topologically, Q1, A1, R1 and Q2, A2, R2 can be viewed as precision current feedback amplifiers. The amplified differential and common-mode signals are applied to a dif­ference amplifier that rejects the common-mode voltage but amplifies the differential voltage. The difference amplifier employs innovations that result in low output offset voltage as well as low output offset voltage drift. Laser-trimmed resistors allow for a highly accurate in-amp with gain error typically less than 20 ppm and CMRR that exceeds 90 dB (G = 1).
Using superbeta input transistors and an I
compensation
B
scheme, the AD8221 offers extremely high input impedance,
, low IB drift, low IOS, low input bias current noise, and
low I
B
extremely low voltage noise of 8 nV/√Hz.
The transfer function of the AD8221 is
4.49
G
1+=
GR
Users can easily and accurately set the gain using a single, standard resistor.
COMPENSATIONIB COMPENSATION
I
Q2
B
10k
10k
+V
S
+IN–IN
–V
S
10k
10k
A3
+V
S
OUTPUT
+V
–V
S
S
REF
–V
S
03149-0-042
Since the input amplifiers employ a current feedback architec­ture, the AD8221’s gain-bandwidth product increases with gain, resulting in a system that does not suffer from the expected bandwidth loss of voltage feedback architectures at higher gains.
In order to maintain precision even at low input levels, special attention was given to the AD8221’s design and layout, resulting in an in-amp whose performance satisfies the most demanding applications.
A unique pinout enables the AD8221 to meet a CMRR specification of 80 dB at 10 kHz (G = 1) and 110 dB at 1 kHz (G = 1000). The balanced pinout, shown in Figure 43, reduces the parasitics that had, in the past, adversely affected CMRR performance. In addition, the new pinout simplifies board layout because associated traces are grouped together. For example, the gain setting resistor pins are adjacent to the inputs, and the reference pin is next to the output.
1
–IN
2
R
G
3
R
G
4
IN
AD8221
TOP VIEW
Figure 43. Pinout Diagram
8
+V
S
7
V
OUT
6
REF
5
–V
S
03149-0-001
Rev. A | Page 13 of 20
Page 14
AD8221

GAIN SELECTION

Placing a resistor across the RG terminals will set the AD8221’s gain, which may be calculated by referring to Table 3 or by using the gain equation
Grounding
The AD8221’s output voltage is developed with respect to the potential on the reference terminal. Care should be taken to tie REF to the appropriate “local ground.”
R
G
4.49
1
−=G
Table 3. Gains Achieved Using 1% Resistors
1% Std Table Value of RG (Ω) Calculated Gain
49.9 k 1.990
12.4 k 4.984
5.49 k 9.998
2.61 k 19.93
1.00 k 50.40 499 100.0 249 199.4 100 495.0
49.9 991.0
In mixed-signal environments, low level analog signals need to be isolated from the noisy digital environment. Many ADCs have separate analog and digital ground pins. Although it is convenient to tie both grounds to a single ground plane, the current traveling through the ground wires and PC board may cause hundreds of millivolts of error. Therefore, separate analog and digital ground returns should be used to minimize the current flow from sensitive points to the system ground. An example layout is shown in Figure 44 and Figure 45.
The AD8221 defaults to G = 1 when no gain resistor is used. Gain accuracy is determined by the absolute tolerance of R
.
G
The TC of the external gain resistor will increase the gain drift of the instrumentation amplifier. Gain error and gain drift are kept to a minimum when the gain resistor is not used.

LAYOUT

Careful board layout maximizes system performance. Traces from the gain setting resistor to the R short as possible to minimize parasitic inductance. To ensure the most accurate output, the trace from the REF pin should either be connected to the AD8221’s local ground as shown in Figure 47, or connected to a voltage that is referenced to the AD8221’s local ground.
Common-Mode Rejection
One benefit of the AD8221’s high CMRR over frequency is that it has greater immunity to disturbances such as line noise and its associated harmonics than do typical in-amps. These, typically, have CMRR fall-off at 200 Hz; common-mode filters are often used to compensate for this shortcoming. The AD8221 is able to reject CMRR over a greater frequency range, reducing the need for filtering.
pins should be kept as
G
Figure 44.Top Layer of the AD8221-EVAL
03149-0-051
A well implemented layout helps to maintain the AD8221’s high CMRR over frequency. Input source impedance and capacitance should be closely matched. In addition, source resistance and capacitance should be placed as close to the inputs as permissible.
Rev. A | Page 14 of 20
03149-0-052
Figure 45.Bottom Layer of the AD8221-EVAL
Page 15
AD8221
f

REFERENCE TERMINAL

As shown in Figure 42, the reference terminal, REF, is at one end of a 10 kΩ resistor. The instrumentation amplifier’s output is referenced to the voltage on the REF terminal; this is useful when the output signal needs to be offset to a precise midsupply level. For example, a voltage source can be tied to the REF pin to level-shift the output so that the AD8221 can interface with an ADC. The allowable reference voltage range is a function of the gain, input and supply voltage. The REF pin should not exceed either +V
or –VS by more than 0.5 V.
S
For best performance, source impedance to the REF terminal should be kept low, since parasitic resistance can adversely affect CMRR and gain accuracy.

POWER SUPPLY REGULATION AND BYPASSING

A stable dc voltage should be used to power the instrumenta­tion amplifier. Noise on the supply pins may adversely affect performance. Bypass capacitors should be used to decouple the amplifier.
A 0.1 µF capacitor should be placed close to each supply pin. As shown in Figure 47, a 10 µF tantalum capacitor may be used further away from the part. In most cases, it may be shared by other precision integrated circuits.
Figure 46
+V
S
0.1µF
+IN
AD8221
–IN
REF
0.1µF 10µ F
–V
S
Figure 47. Supply Decoupling,. REF and Output Referred to Local Ground
10µF
LOAD
V
OUT
03149-0-043

INPUT BIAS CURRENT RETURN PATH

The AD8221’s input bias current must have a return path to common. When the source, such as a thermocouple, cannot provide a return current path, one should be created, as shown in Figure 48.
+V
S
AD8221
REF
–V
S
TRANSFORMER
+V
S
AD8221
REF
–V
S
THERMOCOUPLE
+V
S
C
HIGH-PASS
2πRC
1
=
Figure 48. Creating an I
R
C
CAPACITOR COUPLED
AD8221
R
–V
S
Path
BIAS
REF
03149-0-044

INPUT PROTECTION

All terminals of the AD8221 are protected against ESD1. In addition, the input structure allows for dc overload conditions below the negative supply, –Vs. The internal 400 Ω resistors limit current in the event of a negative fault condition. However, in the case of a dc overload voltage above the positive supply, +Vs, a large current would flow directly through the ESD diode to the positive rail. Therefore, an external resistor should be used in series with the input to limit current for voltages above +Vs. In either scenario, the AD8221 can safely handle a continuous 6 mA current, I = V and I = V
/(400 Ω + R
IN
) for negative overvoltage.
EXT
For applications where the AD8221 encounters extreme overload voltages, as in cardiac defibrillators, external series resistors and low leakage diode clamps such as BAV199Ls, FJH1100s, or SP720s should be used.
for positive overvoltage
IN/REXT
1
1 kV—Human Body Model.
Rev. A | Page 15 of 20
Page 16
AD8221
C

RF INTERFERENCE

RF rectification is often a problem when amplifiers are used in applications where there are strong RF signals. The disturbance may appear as a small dc offset voltage. High frequency signals can be filtered with a low-pass R-C network placed at the input of the instrumentation amplifier, as shown in Figure 49. The filter limits the input signal bandwidth according to the following relationship:
where
C
10CC.
D
R
4.02k
R
4.02k
Diff
R1
499
=
CM
0.1µF
+IN
–IN
0.1µF
FilterFreq
FilterFreq
C
1nF
C
C
10nF
D
1nF
C
C
Figure 49. RFI Suppression
1
=
R
π2
+15V
AD8221
–15V
1
)2(π2
CD
CCR
+
C
10µF
V
OUT
REF
10µF
03149-0-045
CD affects the difference signal and CC affects the common­mode signal. Values of R and C RFI. Mismatch between the R × C R × C
at negative input will degrade the AD8221’s CMRR. By
C
using a value of C
one magnitude larger than CC, the effect of
D
should be chosen to minimize
C
at the positive input and the
C
the mismatch is reduced, and hence, performance is improved.

PRECISION STRAIN GAGE

The AD8221’s low offset and high CMRR over frequency make it an excellent candidate for bridge measurements. As shown in Figure 50, the bridge can be directly connected to the inputs of the amplifier.
+5V
10µF 0.1µF
350
350
350350
Figure 50. Precision Strain Gage
R
+IN
–IN
+
AD8221
+2.5V
03149-0-049
Rev. A | Page 16 of 20
Page 17
AD8221
10k
10k
+2.5V
R3 1k
+12V
0.1µF
R1
R2
OP27
499
0.1µF
–12V
R4 1k
Figure 51. Interfacing to a Differential Input ADC
+12V
0.1µF
10µF
+IN
AD8221
–IN
0.1µF10µF
REF
–12V

CONDITIONING ±10 V SIGNALS FOR A +5 V DIFFERENTIAL INPUT ADC

There is a need in many applications to condition ±10 V signals. However, many of today’s ADCs and digital ICs operate on much lower, single-supply voltages. Furthermore, new ADCs have differential inputs because they provide better common­mode rejection, noise immunity, and performance at low supply voltages. Interfacing a amplifier to a +5 V, differential ADC may be a challenge. Interfacing the in-amp to the ADC requires attenuation and a level shift. A solution is shown in Figure 51.
In this topology, an OP27 sets the AD8221’s reference voltage. The in-amp’s output signal is taken across the OUT pin and the REF pin. Two 1 kΩ resistors and a 499 Ω resistor attenuate the ±10 V signal to +4 V. An optional capacitor, C1, may serve as an ant aliasing filter. An AD8022 is used to drive the ADC.
This topology has five benefits. In addition to level-shifting and attenuation, very little noise is contributed to the system. Noise from R1 and R2 is common to both of the ADC’s inputs and is easily rejected. R5 adds a third of the dominant noise and there­fore makes a negligible contribution to the noise of the system. The attenuator divides the noise from R3 and R4. Likewise, its noise contribution is negligible. The fourth benefit of this inter­face circuit is that the AD8221’s acquisition time is reduced by a factor of 2. With the help of the OP27, the AD8221 only needs to deliver one-half of the full swing; therefore, signals can settle more quickly. Lastly, the AD8022 settles quickly, which is helpful because the shorter the settling time, the more bits that can be resolved when the ADC acquires data. This configuration pro­vides attenuation, a level-shift, and a convenient interface with a differential input ADC while maintaining performance.
±10 V, single-ended instrumentation
+12V
0.1µF
C1
470pF
R5
AD8022
(½)
0.1µF
–12V +12V
0.1µF
AD8022
(½)
0.1µF
–12V
R6 27.4
C2
220µF
R7 27.4
220nF 10nF
+5V
10µF 0.1µ F22µF
+5V +5V
10nF
AV
V
DD
IN+
AD7723
V
IN–
AGND VGND REF1 REF2
V
V
IN
OUT
AD780
GND
DV
2.5V
DD
03149-0-047

AC-COUPLED INSTRUMENTATION AMPLIFIER

Measuring small signals that are in the amplifier’s noise or offset can be a challenge. Figure 52 shows a circuit that can improve the resolution of small ac signals. The large gain reduces the referred input noise of the amplifier to 8 nV/√Hz. Thus, smaller signals can be measured since the noise floor is lower. DC offsets that would have been gained by 100 are eliminated from the AD8221’s output by the integrator feedback network.
At low frequencies, the OP1177 forces the AD8221’s output to 0 V. Once a signal exceeds f amplified input signal.
+V
S
0.1µF
+IN
R
–IN
0.1µF
AD8221
REF
–V
S
–V
+V
S
10µF10µF
Figure 52. AC-Coupled Circuit
499
S
, the AD8221 outputs the
HIGH-PASS
f
=
HIGH-PASS
C 1µF
+V
S
0.1µF
OP1177
0.1µF –V
S
1
2
π
RC
R
15.8k
03149-0-048
Rev. A | Page 17 of 20
Page 18
AD8221
Y

OUTLINE DIMENSIONS

3.00
BSC
85
3.00
BSC
PIN 1
0.65 BSC
0.15
0.00
0.38
0.22
COPLANARITY
0.10 COMPLIANT TO JEDEC STANDARDS MO-187AA
4
SEATING PLANE
4.90 BSC
1.10 MAX
0.23
0.08
8° 0°
0.80
0.60
0.40
Figure 53. 8-Lead Mini Small Outline Package [MSOP] (RM-8)
Dimensions shown in millimeters
5.00 (0.1968)
4.80 (0.1890)
4.00 (0.1574)
3.80 (0.1497)
0.25 (0.0098)
0.10 (0.0040)
COPLANARIT
0.10
CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS (IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN
85
1.27 (0.0500)
SEATING
PLANE
COMPLIANT TO JEDEC STANDARDS MS-012AA
BSC
6.20 (0.2440)
5.80 (0.2284)
41
1.75 (0.0688)
1.35 (0.0532)
0.51 (0.0201)
0.31 (0.0122)
0.25 (0.0098)
0.17 (0.0067)
0.50 (0.0196)
0.25 (0.0099)
1.27 (0.0500)
0.40 (0.0157)
Figure 54. 8-Lead Shrink Small Outline Package [SOIC] (R-8)
× 45°

ORDERING GUIDE

1
Temperature
Rev. A | Page 18 of 20
Package Option Branding
Model
Temperature Range for Specified Performance
Operational Range Package Description
AD8221AR –40°C to +85°C –40°C to 125°C 8-Lead SOIC R-8 AD8221AR-REEL –40°C to +85°C –40°C to 125°C 13" Tape and Reel R-8 AD8221AR-REEL7 –40°C to +85°C –40°C to 125°C 7" Tape and Reel R-8 AD8221ARM –40°C to +85°C –40°C to 125°C 8-Lead MSOP RM-8 JLA AD8221ARM-REEL –40°C to +85°C –40°C to 125°C 13" Tape and Reel RM-8 JLA AD8221ARM-REEL7 –40°C to +85°C –40°C to 125°C 7" Tape and Reel RM-8 JLA AD8221BR –40°C to +85°C –40°C to 125°C 8-Lead SOIC R-8 AD8221BR-REEL –40°C to +85°C –40°C to 125°C 13" Tape and Reel R-8 AD8221BR-REEL7 –40°C to +85°C –40°C to 125°C 7" Tape and Reel R-8 AD8221-EVAL Evaluation Board
1
See Typical Performance Curves for expected operation from 85°C to 125°C.
Page 19
AD8221
NOTES
Rev. A | Page 19 of 20
Page 20
AD8221
NOTES
© 2003 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners.
C03149–0–11/03(A)
Rev. A | Page 20 of 20
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